CN113088873B

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Info

Publication number: CN113088873B
Application number: CN202110284963.9A
Authority: CN
Inventors: 王璐珩; 刘裕杰; 南茂元
Original assignee: Central South University
Current assignee: Central South University
Priority date: 2021-03-15
Filing date: 2021-03-15
Publication date: 2021-12-21
Anticipated expiration: 2041-03-15
Also published as: CN113088873A

Abstract

The invention relates to an ethanol vapor and gap sensing element, which comprises a ceramic substrate, a coil, an insulating layer and an electrode, wherein the ceramic substrate is provided with a plurality of grooves; the ethanol steam and the gap sensitive element are in a coil type; the length of the ceramic substrate is 50mm, the width is 38.5mm, and the thickness is 1 mm; the line width and the line distance of the coil are both 0.5mm, and the number of turns is 10; the insulating layer structure is rectangular, the insulating layer is made of aluminum oxide, the length of the insulating layer is 27.5mm, and the width of the insulating layer is 3 mm; the electrode structure is non-interdigital, the electrode material is tin dioxide, the radius of the electrode is 2mm, the length is 31.43mm, and the width is 1 mm; the sensing element is sensitive to ethanol vapor and to changes in the non-contact gap. The ethanol steam and gap sensing element developed by the invention has small size, thin thickness, simple structure and low cost, can realize gas and non-contact gap measurement by using a single sensing element, is suitable for measuring gas and gap between narrow layers of industrial equipment, and can also be used in the fields of multifunctional electronic skin development and the like.

Description

Ethanol steam and gap sensitive element and development method thereof

Technical Field

The invention belongs to the technical field of sensor measurement, and particularly relates to a gas gap sensor.

Background

A plurality of narrow interlayer structures exist in key parts of modern large-scale industrial equipment, and in order to ensure the safety of a system, the narrow curved surface interlayer gap and ethanol steam need to be measured. Thin gap sensors and thin gas sensors have been developed based on the prior art, but due to the limited size of the field space structure, it is difficult to install a plurality of sensors, and thus it is necessary to reduce the number of sensors placed in the narrow interlayer structure as much as possible. However, the sensing elements developed in the prior art do not have the function of simultaneously measuring gas and non-contact gap. Therefore, how to make a single sensitive element have the capability of measuring the non-contact gap and the ethanol vapor is a difficult problem to solve.

Disclosure of Invention

The invention aims to overcome the defects of the prior art and provides a scheme of a sensitive element for simultaneously measuring ethanol steam and gap sensitivity and a preparation method thereof. By designing an ethanol vapor and gap sensing element, the element comprises: ceramic substrate, coil, insulating layer, electrode;

the ethanol steam and the gap sensitive element are in a coil type;

the length of the ceramic substrate is 50mm, the width of the ceramic substrate is 38.5mm, and the thickness of the ceramic substrate is 1 mm;

the line width and the line distance of the coil are both 0.5mm, and the number of turns is 10;

the insulating layer structure is rectangular, the insulating layer is made of aluminum oxide, the length of the insulating layer is 27.5mm, and the width of the insulating layer is 3 mm;

the electrode structure is non-interdigital, the electrode material is tin dioxide, the radius of the electrode is 2mm, the length of the electrode is 31.43mm, and the width of the electrode is 1 mm; the sensing element is sensitive to ethanol vapor and to changes in the non-contact gap.

Meanwhile, the invention also provides a preparation method for developing the ethanol steam and gap sensitive element, which comprises the following steps:

(f) cleaning a ceramic substrate, and respectively ultrasonically cleaning the ceramic substrate by acetone, absolute ethyl alcohol and deionized water;

(g) sputtering electrode, preparing electrode by magnetron sputtering coating machine radio frequency sputtering;

(h) sputtering an insulating layer, and preparing the insulating layer by direct current sputtering of a magnetron sputtering coating machine;

(i) sputtering the coil, preparing the coil by the radio frequency sputtering of a magnetron sputtering coating machine;

(j) annealing treatment, namely annealing for 10 hours in an atmospheric environment at 300 ℃;

the ceramic substrate cleaning specifically comprises the following steps: ultrasonically cleaning the ceramic substrate by adopting acetone, absolute ethyl alcohol and deionized water for 15 minutes respectively; blowing the mixture by using nitrogen and placing the mixture in a fume hood for later use;

the sputtering electrode specifically comprises: installing a tin dioxide target material on a magnetron target by adopting a magnetron sputtering coating machine, wherein the purity of the tin dioxide target material is 99.99 percent, covering an electrode mask plate on the ceramic substrate, placing the ceramic substrate on a sputtering table board, sequentially starting a mechanical pump and a molecular pump to pump vacuum until the vacuum degree of a vacuum cavity is less than or equal to 8 multiplied by 10 < -4 > Pa, and starting sputtering; meanwhile, argon is introduced at a flow rate of 40sccm, the purity of the argon is 99.999%, the working pressure of the radio-frequency sputtering is 0.5Pa, the sputtering power is 150W, and the sputtering time is 60 minutes;

the sputtering insulating layer specifically comprises: an aluminum target material is installed on a magnetron sputtering coating machine, the purity of the aluminum target material is 99.99%, a mechanical pump and a molecular pump are started in sequence to start vacuum pumping until the vacuum degree of a cavity is less than or equal to 8 x 10 < -4 > Pa, sputtering is started, argon and oxygen are introduced simultaneously, the flow rate of the argon is 50sccm, the flow rate of the oxygen is 1.2sccm, the purities of the argon and the oxygen are both 99.999%, the working pressure of direct-current sputtering is 1Pa, the sputtering power is 150W, and the sputtering time is 120 minutes;

the sputtering coil is specifically as follows: installing a tin dioxide target material on a magnetron target by adopting a magnetron sputtering coating machine, wherein the purity of the tin dioxide target material is 99.99 percent, covering a coil mask plate on the ceramic substrate, placing the ceramic substrate on a sputtering table board, sequentially starting a mechanical pump and a molecular pump to pump vacuum until the vacuum degree of a vacuum cavity is less than or equal to 8 multiplied by 10 < -4 > Pa, and starting sputtering; meanwhile, argon is introduced at a flow rate of 40sccm, the purity of the argon is 99.999%, the working pressure of the radio-frequency sputtering is 0.5Pa, the sputtering power is 150W, and the sputtering time is 60 minutes;

the annealing treatment specifically comprises the following steps: and annealing for 10 hours in an annealing furnace at 300 ℃ in the atmospheric environment to obtain ethanol vapor and the gap sensitive element.

The beneficial effects of the ethanol steam and the gap sensitive element are as follows:

(1) non-contact gap measurement is realized by acquiring the impedance of the element; gas measurement is achieved by taking the resistance of the element; gas and non-contact gap measurements can be accomplished with only one set of sensor system.

(2) The element has small size and thin thickness, and is suitable for being installed in an interlayer structure with narrow space to complete measurement tasks.

(3) The element has simple structure and low cost, and can be applied to the fields of development of multifunctional electronic skins and the like.

The preparation method of the ethanol steam and gap sensitive element has the beneficial effects that: the preparation is completed by a magnetron sputtering technology, the process precision is high, the repeatability is good, and the commercial and industrial production is easy to realize.

Drawings

FIG. 1 is a dimensional view of a ceramic substrate, an electrode mask, an insulating layer mask and a coil mask.

FIG. 2 schematic representation of a magnetron sputtering electrode

Fig. 3 is a top view and a cross-sectional view of an electrode and a ceramic substrate.

Fig. 4 is a schematic diagram of sputtering an insulating layer.

FIG. 5 is a top view and a cross-sectional view of an insulating layer, an electrode, and a ceramic substrate.

Fig. 6 is a schematic diagram of a sputtering coil.

FIG. 7 is a top view and a cross-sectional view of ethanol vapor and a gap sensor.

In fig. 1 to 7, a denotes a ceramic substrate; b represents an electrode mask plate; c represents an insulating layer mask plate; d represents a coil mask plate; e represents a tin dioxide target material; f represents a vacuum chamber; g represents an electrode; h represents an aluminum target material; i represents an insulating layer; j represents a coil.

Detailed Description

In order that the invention may be more fully understood, a more particular description of the invention will now be rendered by reference to specific embodiments thereof that are illustrated in the appended drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.

Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.

The following embodiments are provided to describe the development method of the ethanol vapor and gap sensor with gas and non-contact gap measurement functions in the present invention:

the length of the ceramic substrate (a) is 50mm, the width is 38.5mm, and the thickness is 1 mm; the length of the electrode mask plate (b) is 50mm, the width is 38.5mm, the thickness is 0.01mm, the radius of the electrode is 2mm, the length of the electrode is 31.43mm, and the width of the electrode is 1 mm; the insulating layer mask plate (c) has the length of 50mm, the width of 38.5mm, the thickness of 0.01mm, the length of the insulating layer of 27.5mm and the width of the insulating layer of 3 mm; the length of the coil mask plate (d) is 50mm, the width is 38.5mm, the thickness is 0.01mm, the line width and the line distance of the coil are both 0.5mm, and the number of turns is 10; the mask plates (b, c and d) are all made of 304 stainless steel by a photochemical etching process.

Respectively ultrasonically cleaning the ceramic substrate (a), the electrode mask plate (b), the insulating layer mask plate (c) and the coil mask plate (d) for 15 minutes by adopting acetone (analytically pure), absolute ethyl alcohol (analytically pure) and deionized water; and then placed in a fume hood for later use by blowing with nitrogen. Removing organic matters on the surfaces of the ceramic substrate (a) and the mask plates (b, c and d) by using acetone, removing acetone remained on the surfaces of the ceramic substrate (a) and the mask plates (b, c and d) by using absolute ethyl alcohol, and removing the absolute ethyl alcohol remained on the surfaces of the ceramic substrate (a) and the mask plates (b, c and d) by using deionized water.

Installing a tin dioxide target material (e) on a magnetron target by adopting a magnetron sputtering film plating machine, covering an electrode mask plate (b) on a ceramic substrate (a) when the purity of the tin dioxide target material (e) is 99.99 percent, then placing the electrode mask plate (b) on a sputtering table top, and starting to vacuumize. The industrial personal computer is operated to cover the vacuum cavity cover, the mechanical pump and the molecular pump are started in sequence to start vacuum pumping, and sputtering is started when the vacuum degree of the vacuum cavity (f) is less than or equal to 8 multiplied by 10 < -4 > Pa, as shown in figure 2. And introducing argon gas with the purity of 99.999 percent and the flow rate of 40sccm by operating a control machine, and using a radio frequency sputtering mode, wherein the working pressure is 0.5Pa, the sputtering power is 150W, and the sputtering time is 30-300 minutes.

After magnetron sputtering, the argon gas is stopped to be introduced by operating the industrial personal computer, the charging valve is opened, and the electrode mask plate (b) and the ceramic substrate (a) are taken out when the pressure of the vacuum cavity (f) is the same as the atmospheric pressure. At this time, an electrode (g) is formed on the ceramic substrate (a).

An aluminum target material (h) is arranged on a magnetron target by adopting a magnetron sputtering film plating machine, the purity of the aluminum target material (h) is 99.99 percent, an insulating layer mask plate (c) is covered on a ceramic substrate (a), and then the ceramic substrate (a) and the insulating layer mask plate (c) are placed on a sputtering table top and vacuumized. The industrial personal computer is operated to cover the vacuum cavity cover, the mechanical pump and the molecular pump are started in sequence to start vacuum pumping, and sputtering is started when the vacuum degree of the vacuum cavity (f) is less than or equal to 8 multiplied by 10 < -4 > Pa, as shown in figure 4. Argon and oxygen are introduced through an operating control machine, the purity of the argon and the oxygen is 99.999 percent, the flow rate of the argon is 50sccm, the flow rate of the oxygen is 1.2sccm, a direct-current sputtering mode is used, the working pressure is 1Pa, the sputtering power is 150W, and the sputtering time is 60-600 minutes.

After magnetron sputtering, the industrial personal computer is operated, argon and oxygen are stopped to be introduced, the inflation valve is opened, and the insulating layer mask plate (c) and the ceramic substrate (a) are taken out when the pressure of the vacuum cavity (f) is equal to the atmospheric pressure. At this time, an insulating layer (i) is formed on the ceramic substrate (a).

Installing a tin dioxide target material (e) on a magnetron target by adopting a magnetron sputtering film plating machine, covering a coil mask plate (d) on a ceramic substrate (a) when the purity of the tin dioxide target material (e) is 99.99 percent, then placing the coil mask plate on a sputtering table top, and starting to vacuumize. The industrial personal computer is operated to cover the vacuum cavity cover, the mechanical pump and the molecular pump are started in sequence to start vacuum pumping, and sputtering is started when the vacuum degree of the vacuum cavity (f) is less than or equal to 8 multiplied by 10 < -4 > Pa, as shown in figure 6. And introducing argon gas with the purity of 99.999 percent and the flow rate of 40sccm by operating a control machine, and using a radio frequency sputtering mode, wherein the working pressure is 0.5Pa, the sputtering power is 150W, and the sputtering time is 30-300 minutes.

After magnetron sputtering, the argon gas is stopped to be introduced by operating the industrial personal computer, the inflation valve is opened, and the coil mask plate (d) and the ceramic substrate (a) are taken out when the pressure of the vacuum cavity (f) is the same as the atmospheric pressure. At this time, a coil (j) is formed on the ceramic substrate (a).

And annealing for 10 hours in an atmosphere environment at 300 ℃ in an annealing furnace, so that the compactness and stability of the semiconductor material are enhanced, and the ethanol steam and gap sensitive element with gas and non-contact gap measurement functions is obtained.

Examples

The length of the ceramic substrate is 50mm, the width is 38.5mm, and the thickness is 1 mm; the length of the electrode mask plate is 50mm, the width is 38.5mm, the thickness is 0.01mm, the radius of the electrode is 2mm, the length of the electrode is 31.43mm, and the width of the electrode is 1 mm; the insulating layer mask plate is 50mm in length, 38.5mm in width, 0.01mm in thickness, 27.5mm in length and 3mm in width; the length of the coil mask plate is 50mm, the width is 38.5mm, the thickness is 0.01mm, the line width and the line distance of the coil are both 0.5mm, and the number of turns is 10; the mask plates are all made of 304 stainless steel by a photochemical etching process.

Respectively ultrasonically cleaning the ceramic substrate, the electrode mask plate, the insulating layer mask plate and the coil mask plate for 15 minutes by adopting acetone (analytically pure), absolute ethyl alcohol (analytically pure) and deionized water; and then placed in a fume hood for later use by blowing with nitrogen. And removing organic matters on the surfaces of the ceramic substrate and the mask plate by using acetone, removing acetone remained on the surfaces of the ceramic substrate and the mask plate by using absolute ethyl alcohol, and removing the absolute ethyl alcohol remained on the surfaces of the ceramic substrate and the mask plate by using deionized water.

A magnetron sputtering coating machine is adopted to install a tin dioxide target material on a magnetron target, the purity of the tin dioxide target material is 99.99 percent, an electrode mask plate is covered on a ceramic substrate, and then the electrode mask plate and the ceramic substrate are placed on a sputtering table top and vacuumized. The industrial personal computer is operated, the vacuum cavity cover is covered, the mechanical pump and the molecular pump are started in sequence to start vacuum pumping, and sputtering is started when the vacuum degree of the vacuum cavity is less than or equal to 8 multiplied by 10 < -4 > Pa. Argon gas is introduced through an operating control machine, the purity of the argon gas is 99.999 percent, the flow rate of the argon gas is 40sccm, a radio frequency sputtering mode is used, the working pressure is 0.5Pa, the sputtering power is 150W, and the sputtering time is 60 minutes.

After magnetron sputtering, the argon gas is stopped to be introduced by operating the industrial personal computer, the charging valve is opened, and the electrode mask plate and the ceramic substrate are taken out when the pressure intensity of the vacuum cavity is the same as the atmospheric pressure. At this time, an electrode is formed on the ceramic substrate.

An aluminum target material is arranged on a magnetron sputtering coating machine, the purity of the aluminum target material is 99.99 percent, an insulating layer mask plate is covered on a ceramic substrate, and then the insulating layer mask plate and the ceramic substrate are placed on a sputtering table top and vacuumized. The industrial personal computer is operated, the vacuum cavity cover is covered, the mechanical pump and the molecular pump are started in sequence to start vacuum pumping, and sputtering is started when the vacuum degree of the vacuum cavity is less than or equal to 8 multiplied by 10 < -4 > Pa. Argon and oxygen are introduced through an operating control machine, the purity of the argon and the oxygen is 99.999 percent, the flow rate of the argon is 50sccm, the flow rate of the oxygen is 1.2sccm, a direct-current sputtering mode is used, the working pressure is 1Pa, the sputtering power is 150W, and the sputtering time is 120 minutes.

After magnetron sputtering, the argon and oxygen are stopped to be introduced by operating the industrial personal computer, the inflation valve is opened, and the insulating layer mask plate and the ceramic substrate are taken out when the pressure intensity of the vacuum cavity is the same as the atmospheric pressure. At this time, an insulating layer is formed on the ceramic substrate.

A magnetron sputtering coating machine is adopted, a tin dioxide target material is arranged on a magnetron target, the purity of the tin dioxide target material is 99.99 percent, a coil mask plate is covered on a ceramic substrate, then the coil mask plate and the ceramic substrate are placed on a sputtering table top, and vacuumizing is started. The industrial personal computer is operated, the vacuum cavity cover is covered, the mechanical pump and the molecular pump are started in sequence to start vacuum pumping, and sputtering is started when the vacuum degree of the vacuum cavity is less than or equal to 8 multiplied by 10 < -4 > Pa. Argon gas is introduced through an operating control machine, the purity of the argon gas is 99.999 percent, the flow rate of the argon gas is 40sccm, a radio frequency sputtering mode is used, the working pressure is 0.5Pa, the sputtering power is 150W, and the sputtering time is 60 minutes.

After magnetron sputtering, the argon gas is stopped to be introduced by operating the industrial personal computer, the charging valve is opened, and the coil mask plate and the ceramic substrate are taken out when the pressure intensity of the vacuum cavity is the same as the atmospheric pressure. At this time, a coil is formed on the ceramic substrate.

The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the present invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.

Claims

Translated fromChinese

1.一种乙醇蒸汽与间隙敏感元件，该元件包括：1. An alcohol vapor and a gap sensitive element, the element comprising:

陶瓷衬底，线圈，绝缘层，电极；Ceramic substrates, coils, insulating layers, electrodes;

所述乙醇蒸汽与间隙敏感元件为线圈式；The ethanol vapor and the gap sensitive element are of coil type;

所述陶瓷衬底的长度为50mm，宽度为38.5mm，厚度为1mm；The length of the ceramic substrate is 50mm, the width is 38.5mm, and the thickness is 1mm;

所述线圈的线宽和线距均为0.5mm，圈数为10圈；The line width and line spacing of the coil are both 0.5mm, and the number of turns is 10;

所述绝缘层结构为长方形，所述绝缘层材料为氧化铝，所述绝缘层的长度为27.5mm，绝缘层宽度为3mm；The structure of the insulating layer is a rectangle, the material of the insulating layer is aluminum oxide, the length of the insulating layer is 27.5mm, and the width of the insulating layer is 3mm;

所述电极结构为非叉指型，所述电极材料为二氧化锡，所述电极的半径为2mm，长度为31.43mm，宽度为1mm；The electrode structure is non-interdigital, the electrode material is tin dioxide, the radius of the electrode is 2mm, the length is 31.43mm, and the width is 1mm;

其特征在于，该敏感元件对乙醇蒸汽敏感且对非接触式间隙的变化敏感。It is characterized in that the sensitive element is sensitive to alcohol vapor and sensitive to the change of non-contact gap.

2.一种研制如权利要求1所述乙醇蒸汽与间隙敏感元件的方法，包括：2. a method for developing alcohol vapor and gap sensitive element as claimed in claim 1, comprising:

(a)陶瓷衬底清洗，通过丙酮，无水乙醇，去离子水分别超声清洗；(a) The ceramic substrate is cleaned by ultrasonic cleaning with acetone, absolute ethanol and deionized water respectively;

(b)溅射电极，通过磁控溅射镀膜机射频溅射制备电极；(b) sputtering electrodes, which are prepared by radio frequency sputtering of a magnetron sputtering coater;

(c)溅射绝缘层，通过磁控溅射镀膜机直流溅射制备绝缘层；(c) sputtering the insulating layer, and preparing the insulating layer by direct current sputtering of a magnetron sputtering coater;

(d)溅射线圈，通过磁控溅射镀膜机射频溅射制备线圈；(d) a sputtering coil, which is prepared by radio frequency sputtering of a magnetron sputtering coater;

(e)退火处理，在300℃大气环境中退火10小时；(e) annealing treatment, annealing in the atmosphere at 300°C for 10 hours;

所述陶瓷衬底清洗具体为：采用丙酮、无水乙醇、去离子水分别超声清洗陶瓷衬底各15分钟；使用氮气吹干放置在通风橱内备用；The cleaning of the ceramic substrate is as follows: using acetone, anhydrous ethanol and deionized water to ultrasonically clean the ceramic substrate for 15 minutes respectively; drying with nitrogen and placing it in a fume hood for use;

所述溅射电极具体为：采用磁控溅射镀膜机，将二氧化锡靶材安装于磁控靶上，所述二氧化锡靶材的纯度为99.99％，将电极掩膜板覆盖在所述陶瓷衬底上，并放置于溅射台面上，依次开启机械泵和分子泵抽真空至真空腔体的真空度小于等于8×10^-4Pa，开始溅射；同时以流速40sccm通入氩气，所述氩气纯度为99.999％，所述射频溅射工作压强为0.5Pa，溅射功率为150W，溅射时间为60分钟；The sputtering electrode is specifically: a magnetron sputtering coating machine is used to install a tin dioxide target on the magnetron target, the purity of the tin dioxide target is 99.99%, and the electrode mask plate is covered on the magnetron target. The ceramic substrate was placed on the sputtering table, and the mechanical pump and the molecular pump were turned on in turn to evacuate until the vacuum degree of the vacuum chamber was less than or equal to 8×10^-4 Pa, and sputtering was started; at the same time, argon was introduced at a flow rate of 40sccm gas, the purity of the argon gas is 99.999%, the working pressure of the radio frequency sputtering is 0.5Pa, the sputtering power is 150W, and the sputtering time is 60 minutes;

所述溅射绝缘层具体为：采用磁控溅射镀膜机，将铝靶材安装于磁控靶上，所述铝靶材纯度为99.99％，依次开启机械泵和分子泵开始抽真空至腔体的真空度小于等于8×10^-4Pa，开始溅射，同时通入氩气和氧气，所述氩气流速为50sccm，所述氧气流速为1.2sccm，所述氩气和氧气的纯度均为99.999％，所述直流溅射工作压强为1Pa，溅射功率为150W，溅射时间为120分钟；The sputtering insulating layer is specifically as follows: a magnetron sputtering coating machine is used to install an aluminum target on the magnetron target, the purity of the aluminum target is 99.99%, and the mechanical pump and the molecular pump are turned on in turn to start vacuuming to the cavity. The vacuum degree of the body is less than or equal to 8 × 10^-4 Pa, sputtering starts, and argon and oxygen are introduced at the same time. The flow rate of the argon gas is 50 sccm, and the flow rate of the oxygen gas is 1.2 sccm. is 99.999%, the DC sputtering working pressure is 1Pa, the sputtering power is 150W, and the sputtering time is 120 minutes;

所述溅射线圈具体为：采用磁控溅射镀膜机，将二氧化锡靶材安装于磁控靶上，所述二氧化锡靶材的纯度为99.99％，将线圈掩膜板覆盖在所述陶瓷衬底上，并放置于溅射台面上，依次开启机械泵和分子泵抽真空至真空腔体的真空度小于等于8×10^-4Pa，开始溅射；同时以流速40sccm通入氩气，所述氩气纯度为99.999％，所述射频溅射工作压强为0.5Pa，溅射功率为150W，溅射时间为60分钟；The sputtering coil is specifically as follows: a magnetron sputtering coating machine is used to install a tin dioxide target on the magnetron target, the purity of the tin dioxide target is 99.99%, and the coil mask plate is covered on the magnetron target. The ceramic substrate was placed on the sputtering table, and the mechanical pump and the molecular pump were turned on in turn to evacuate until the vacuum degree of the vacuum chamber was less than or equal to 8×10^-4 Pa, and sputtering was started; at the same time, argon was introduced at a flow rate of 40sccm gas, the purity of the argon gas is 99.999%, the working pressure of the radio frequency sputtering is 0.5Pa, the sputtering power is 150W, and the sputtering time is 60 minutes;

所述退火处理具体为：在退火炉中300℃大气环境中退火10小时得到乙醇蒸汽与间隙敏感元件。The annealing treatment is specifically as follows: annealing in an annealing furnace at 300° C. for 10 hours to obtain ethanol vapor and a gap sensitive element.