CN112712932A - High-temperature-resistant silicon dioxide data transmission cable - Google Patents

Abstract

The invention discloses a high-temperature-resistant silicon dioxide data transmission cable which comprises a conductor, an insulating layer and a sheath, wherein the conductor, the insulating layer and the sheath are sequentially arranged from inside to outside along the radial direction; the invention provides a high-temperature-resistant silicon dioxide data transmission cable, and aims to solve the problems that the existing cable is not high-temperature-resistant and is poor in friction resistance.

Description

High-temperature-resistant silicon dioxide data transmission cable

Technical Field

The application relates to a signal line, in particular to a high-temperature-resistant silicon dioxide data transmission cable.

Background

A data transmission cable, also called a data line, is generally composed of a conductor, an insulating layer, and an outer sheath. The most common data line conductor is a copper wire, the insulating layer is PE, the outer sheath is PVC, and the temperature can be kept up to 70 ℃. The data line insulating layer of a higher level point is FEP, the outer sheath is high temperature resistant PVC or PE, the temperature resistance can reach 105 ℃, and the transmission performance is better than that of a common data line. Chinese patent 201620186731.4 discloses a multi-core polyimide insulation composite film graphite coating sheath communication cable as a data line, which can resist temperature up to 300 ℃, however, firstly, the dielectric constant of the silicon dioxide-polyimide composite material is too high compared with that of a common data transmission line, and the friction resistance is poor.

In view of the above, a data transmission cable that is resistant to high temperature and has transmission performance meeting the standard is needed.

Disclosure of Invention

The invention mainly aims at the problems, provides a high-temperature-resistant silicon dioxide data transmission cable, and aims to solve the problems that the existing cable is not high-temperature-resistant and has poor friction resistance.

In order to achieve the purpose, the invention provides a high-temperature-resistant silicon dioxide data transmission cable which comprises a conductor, an insulating layer and a sheath, wherein the conductor, the insulating layer and the sheath are sequentially arranged from inside to outside along the radial direction, the data transmission cable further comprises a shielding layer, the conductor is coated in the insulating layer to serve as a conducting wire, a single conducting wire or a plurality of twisted pairs of conducting wires serve as a wire pair, and the shielding layer is coated outside the co-twisted pairs of the wire pair.

Further, adjacent pairs have different pitches between them.

Further, the outer skin is an outer woven layer of soft ceramic fibers.

Further, the conductor is a single or multiple stranded oxygen-free copper conductor.

Further, the insulating layer is a layer of silicon dioxide coated between the conductive gate and the channel.

Furthermore, the shielding layer is a structure of a plurality of parallel wound copper strips.

Compared with the prior art, the cable has the advantages of high temperature resistance, no need of adding a temperature resistant layer in the cable design according to the common design, high mechanical strength, difficulty in damage, considerable flexibility, capability of being bent to a certain degree, and capability of achieving the performance of a common transmission cable. Other advantageous effects of the present invention are explained in the detailed description.

Drawings

Fig. 1 is an embodiment of a high temperature silica-resistant data transmission cable according to the present invention.

Reference numerals shown in the drawings: 1. a conductor; 2. an insulating layer; 3. a shielding layer; 4. a skin; 10. a wire; 20. and (4) line pair.

Detailed Description

The present invention will be described in detail below with reference to the attached drawings, and the technical solutions in the embodiments of the present invention will be clearly and completely described. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

It will be understood that when an element is referred to as being "secured to" another element, it can be directly on the other element or intervening elements may also be present. When a component is referred to as being "connected" to another component, it can be directly connected to the other component or intervening components may also be present. When a component is referred to as being "disposed on" another component, it can be directly on the other component or intervening components may also be present. The terms "vertical," "horizontal," "left," "right," and the like as used herein are for illustrative purposes only.

Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.

Referring to fig. 1, the present embodiment provides a high temperature resistant silicon dioxide data transmission cable, which has a four-layer structure, and includes aconductor 1, aninsulating layer 2, ashielding layer 3, and asheath 4, where theconductor 1, theinsulating layer 2, theshielding layer 3, and thesheath 4 are sequentially arranged from inside to outside along a radial direction; theinsulating layer 2 is internally coated with aconductor 1 as awire 10, asingle wire 10 or a plurality oftwisted wires 10 as awire pair 20, and the plurality ofwire pairs 20 are twisted together and externally coated with ashielding layer 3.

When the transmission line is long and the influence of external interference is serious, the interference between the external is reduced by adopting the 'crossing' technology, namely, asingle wire 10 or a plurality ofwires 10 which are transmitted in parallel are mutually twisted according to certain tightness to form awire pair 20, so that the mechanical strength of the cable can be improved, such as the bending property, the tensile strength, the cable size reduction (core wires can be reasonably arranged by twisting), the flexibility is increased, and the corona phenomenon is improved.

In the above embodiment, when the plurality ofwires 10 are twisted into onepair 20, different twisting pitches may be set for eachpair 20, so as to distinguish the magnetic field effect during transmission of eachpair 20 and reduce the influence of crosstalk betweenadjacent pairs 20.

Preferably, thesheath 4 is a fibrous lightweight refractory material, such as an outer woven layer of soft ceramic fibers.

Preferably, theconductor 1 is a single or multiple stranded oxygen-free copper conductor.

Preferably, theinsulating layer 2 is a layer of silicon dioxide applied between the gate and the channel of theconductor 1.

Preferably, theshielding layer 3 is a structure of a plurality of parallel wound copper strips, which can enhance the effect of shielding signal interference.

The present application provides an embodiment of a manufacturing process, which comprises the following specific manufacturing processes: twosilicon dioxide wires 10 are twisted together to form asingle wire pair 20, then fourwire pairs 20 are twisted together, then a shielding layer 3 (ultrathin copper strip) with shielding function is used for wrapping the twisted wires, and finally thesheath 4 of the soft ceramic fiber is used for weaving. The cable can resist temperature of 800 ℃. The silicon dioxide is low-dielectric-constant silicon dioxide, and meets the requirement of the transmission cable on loss.

From a reading of the foregoing detailed description, it will be appreciated by those skilled in the art that the invention can be readily implemented. It should be understood, however, that the intention is not to limit the invention to the particular embodiments described. On the basis of the embodiments disclosed, a person skilled in the basic field can combine different technical features at will, thereby implementing different technical solutions. The present invention is not limited to the above embodiments, and any embodiments mentioned in the description fall within the scope of the present invention.

The present invention has been described in terms of specific examples, which are provided to aid understanding of the invention and are not intended to be limiting. For a person skilled in the art to which the invention pertains, several simple deductions, modifications or substitutions may be made according to the idea of the invention.

Claims (6)

1. The utility model provides a high temperature resistant silica data transmission cable, includes conductor (1), insulating layer (2), crust (4), conductor (1), insulating layer (2) and crust (4) radially set up from inside to outside in proper order, its characterized in that, data transmission cable still includes shielding layer (3), cladding conductor (1) is as a wire (10) in insulating layer (2), and single wire (10) or several pair twist wire (10) after as a line pair (20), several line pair (20) twist outsourcing shielding layer (3) altogether.

2. A high temperature resistant silica data transmission cable as claimed in claim 1, wherein adjacent pairs (20) have different lay lengths.

3. A high temperature resistant silica data transmission cable according to claim 1 wherein the sheath (4) is an outer braid of soft ceramic fibers.

4. A high temperature resistant silica data transmission cable according to claim 1 wherein the conductor (1) is a single or multiple stranded oxygen free copper conductor.

5. A high temperature resistant silica data transmission cable according to claim 1, wherein the insulating layer (2) is a layer of silica applied between the gate and the channel of the conductor (1).

6. A high temperature silica data transmission cable according to claim 1, wherein said shielding layer (3) is a multi-piece parallel wound copper tape structure.

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