CN112542957A - Average value equivalence-based IGCT-MMC loss analysis method - Google Patents
Average value equivalence-based IGCT-MMC loss analysis methodDownload PDFInfo
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
- H02M7/42—Conversion of DC power input into AC power output without possibility of reversal
- H02M7/44—Conversion of DC power input into AC power output without possibility of reversal by static converters
- H02M7/48—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/483—Converters with outputs that each can have more than two voltages levels
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
- H02M7/42—Conversion of DC power input into AC power output without possibility of reversal
- H02M7/44—Conversion of DC power input into AC power output without possibility of reversal by static converters
- H02M7/48—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/505—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means
- H02M7/515—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means using semiconductor devices only
- H02M7/521—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means using semiconductor devices only in a bridge configuration
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Abstract
Translated fromChinese
Description
Technical Field
The invention belongs to the technical field of loss evaluation of modular multilevel converters, and particularly relates to an average value equivalence-based IGCT-MMC loss analysis method.
Background
Renewable energy utilization is a great trend for the development of the future energy field. It is predicted that by 2050, renewable energy in china will account for more than 50% of energy consumption. A High Voltage Direct Current Source converter (HVDC-VSC) is widely used for renewable energy grid connection due to its advantages of flexible regulation, low harmonic, High efficiency, and the like. A Modular Multilevel Converter (MMC) is one of the commonly used topologies of HVDC-VSC technology. At present, Insulated Gate Bipolar Transistor (IGBT) is widely used in MMC due to its advantages of high voltage resistance, high current, high switching frequency, low switching loss, and acceptable on-state loss.
An Integrated Gate-Commutated Thyristor (IGCT) is a high-power fully-controlled power electronic device developed from a Gate Turn-off Thyristor (GTO), and was first developed successfully in 1996 by ABB. Compared with an IGBT, the IGCT device has the advantages of stronger through-current capacity, higher blocking voltage, lower on-state voltage drop and the like of a current control device, and has further development potential. MMC adopts the modularized design, relies on high module quantity rather than high modulation frequency to realize low harmonic voltage output, and this has evaded the not enough of IGCT switching frequency low. Therefore, IGCT is more suitable for MMC applications. In addition, the IGCT provides a new possible solution for fault ride-through of the half-bridge MMC due to its high surge current endurance capability.
Meanwhile, the application of the IGCT in the field of flexible direct current transmission is expected in the prior art. The topology, the circuit characteristics and the like of an IGCT-MMC half-bridge submodule are analyzed, simulation is built for loss analysis, and an opposite impact platform is built for experiments. And the loss of the IGCT-MMC is also analyzed in a simulation building mode. In fact, because the number of modules in the high-voltage large-capacity MMC is usually hundreds, the number of the submodules is huge, the switching process of each submodule is simulated through simulation calculation, and then the method for calculating the loss of the device through the actual current waveform of the device needs a large amount of calculation, particularly when the circuit parameters need to be frequently optimized and the loss of the submodules needs to be estimated, the required calculation time is long, and the loss is complicated through simulation analysis. A method for calculating currents of all devices of a submodule and analyzing loss in an average value equivalent mode is provided, loss and junction temperature of an MMC device based on the IGBT are analyzed, and verification is carried out through experiments.
Disclosure of Invention
Aiming at the problems, the invention provides an average value equivalence-based IGCT-MMC loss analysis method, which comprises the following steps:
step a, determining a sub-module topological structure of a Modular Multilevel Converter (MMC) based on an Integrated Gate Commutated Thyristor (IGCT) device;
b, establishing an average value equivalent model;
step c, evaluating the loss of a sub-module IGCT device, the loss of a buffer circuit and the loss of an energy taking power supply in the running process of the IGCT-MMC based on the average value equivalent model;
and d, obtaining the complete machine loss analysis result of the IGCT-MMC based on the evaluation of the sub-module in the step c.
Further, the step c of estimating the loss of the IGCT device based on the average equivalent model comprises the following steps:
step c11, analyzing the on-state loss of the IGCT device;
and c12, analyzing the switching loss of the IGCT device, wherein the switching loss comprises IGCT turn-on loss, IGCT turn-off loss and diode reverse recovery loss.
Further, average power P of IGCT device on-state lossXExpressed as:
wherein v isX0Representing the threshold voltage, I, of the IGCT deviceXmeanRepresents the average current, r, of the IGCT deviceXRepresenting the slope resistance, I, of the IGCT deviceXrmsRepresenting the root mean square current of the IGCT device.
Further, the IGCT device has a switching loss PTbExpressed as:
Further, the evaluation of the loss of the sub-module buffer circuit based on the average equivalent model in step c comprises the following steps:
step c21, direct resistance loss P to anode reactanceLCarrying out analysis;
PL＝ILrms2RLwherein R isLDenotes the anode reactance DC resistance, ILrmsRepresents the anode reactanceSquare root current;
step c22, action loss P for the clamping circuitclCarrying out analysis;
Further, the evaluation of the sub-module power-taking power loss based on the average equivalent model in the step c comprises the following steps:
step c31, analyzing the gate drive power consumption of the IGCT device;
step c32, driving the gate of the IGCT device with constant currentGCalculating;
step c33, calculating the gate driving power of the IGCT device under the MMC working condition;
and c34, adding the driving power of the two IGCT gate poles in the IGCT-MMC sub-module, and considering the power of the control board card and the efficiency of the energy taking power supply to obtain the loss of the energy taking power supply.
Further, the IGCT device gate drive power consumption in step c31 includes: in static power consumption and an opening behavior, in power consumption of injecting pulse current to a gate pole, in power consumption of injecting steady-state current to the gate pole and in a closing behavior, power consumption generated by capacitor extraction of the gate pole current, loss generated by opening a capacitor charging circuit, closing the capacitor charging circuit and inputting a voltage stabilizing circuit.
Further, the gate driving power P of the IGCT device in step c32GExpressed as:
PG＝k1+k2f+k3Ioff+k4fIoffwherein f represents the switching frequency, IoffDenotes the off current, k1、k2、k3、k4A predetermined value.
Further, when the gate driving power of the IGCT device is calculated in the MMC working condition in step c33, in the formula of step c32, the switching frequency is replaced by the switching frequency of the sub-module, and the off-current is replaced by the average current of the IGCT corresponding device pair.
The method is based on an average value equivalent model, evaluates the losses of a sub-module IGCT device, a buffer circuit, an energy-taking power supply and the like in the IGCT-MMC operation process, and compares the losses with the losses of a same-level IGBT-MMC scheme. Due to the advantage of low-pass loss of the IGCT, although additional loss is caused by adding an auxiliary circuit due to the requirement of device characteristics, the total loss of the IGCT-MMC sub-module is still 16% lower than that of the IGBT-MMC scheme. Meanwhile, the average equivalent current calculation method adopted by the invention has the advantages of small operand, high accuracy and the like, and provides a more simple, convenient and accurate mode for IGCT-MMC submodule design and complete machine loss evaluation. Due to the lower loss of the IGCT and the potential of further development of the through-current and voltage resistance of the IGCT, the IGCT has a larger development prospect in the field of high-voltage large-capacity MMC.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and those skilled in the art can also obtain other drawings according to the drawings without creative efforts.
FIG. 1 is a schematic flow chart of an IGCT-MMC loss analysis method based on mean value equivalence in an embodiment of the present invention;
FIG. 2 is a schematic diagram illustrating the topological structure of IGCT-based MMC sub-modules in the embodiment of the present invention;
FIG. 3 is a schematic diagram illustrating the gate drive principle of the IGCT in an embodiment of the present invention;
FIG. 4 is a schematic diagram illustrating an IGCT gate drive power-off current linear configuration in accordance with an embodiment of the present invention;
FIG. 5 is a schematic diagram showing the linear structure of IGCT gate drive power-switching frequency in an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The Integrated Gate Commutated Thyristor (IGCT) has the advantages of low on-state loss, strong current capacity and the like, still has the potential of further development, and is suitable for the application occasions of Modular Multilevel Converters (MMC). The invention describes a loss evaluation principle and a calculation method of an MMC based on an IGCT device by using an average value equivalent method. In particular, detailed analysis is given for partial losses of an IGCT device, a buffer circuit, an energy-taking power supply and the like. On the basis, compared with the loss of the equivalent IGBT-MMC scheme, the efficiency advantage of the IGCT-MMC scheme is verified.
Aiming at the current research situation, the invention analyzes the calculation principle of loss of each part of an IGCT-MMC main circuit power device, a buffer circuit, an energy-taking power supply and the like based on an average value equivalent method and provides a calculation method. And (3) combining specific engineering parameters, giving an example through MATLAB programming, and comparing the example with the loss of the IGBT-MMC.
Fig. 1 shows a schematic flow chart of an IGCT-MMC loss analysis method based on mean value equivalence in an embodiment of the present invention, and in fig. 1, the method includes the following steps:
step a, determining a sub-module topological structure of a Modular Multilevel Converter (MMC) based on an Integrated Gate Commutated Thyristor (IGCT) device;
b, establishing an average value equivalent model;
step c, evaluating the loss of a sub-module IGCT device, the loss of a buffer circuit and the loss of an energy taking power supply in the running process of the IGCT-MMC based on the average value equivalent model;
and d, obtaining the complete machine loss analysis result of the IGCT-MMC based on the evaluation of the sub-module in the step c.
Specifically, an IGCT-based MMC sub-module is determined, the IGCT and the IGBT are both full-control power semiconductor devices, and the IGCT-MMC sub-module and the IGBT-MMC sub-module are the same in main circuit topology. The IGBT is a voltage-controlled device, and the turn-on rate can be controlled by controlling the rising gradient of a grid trigger signal. In contrast, the IGCT turns on similarly to a thyristor, which is a positive feedback process, and the turn-on rate of the IGCT cannot be controlled by the gate driving circuit, so that a large di/dt is generated in the power semiconductor device when the IGCT is turned on.
Although modern fast recovery diodes and new IGCT devices have good di/dt tolerance, excessive di/dt can still cause damage, thus requiring an anode reactance in the commutation loop to limit the rate of current change. The anode reactance causes oscillations during switching transients which may cause overvoltage breakdown of the device, and a clamp circuit is provided to protect the device. The anode reactance and the clamp circuit are collectively called a buffer circuit.
FIG. 2 shows a schematic diagram of the topological structure of IGCT-based MMC sub-modules in the embodiment of the present invention. C, C in FIG. 2sRepresents the capacitance, LsRepresents a reactor, RsRepresents resistance, D1、D2、DsIndicating diode, T1、T2An IGCT device is shown.
In addition, current needs to be continuously injected into a gate pole in an on state of the IGCT, and thousands of amperes of current needs to be drawn out of the gate pole when the IGCT is turned off, so that the driving power of the gate pole can reach dozens of watts or even hundreds of watts, which is larger than that of the IGBT.
Specifically, an average value equivalent model is established, and when the current direction and the switching state of the sub-modules are different, bridge arm currents can flow through different power semiconductor devices, so that device losses are different. To calculate the loss data, the current flowing through each device must be analyzed. The direction of the bridge arm current determines the power device pair through which the current flows, and the switching state further determines the through-current device. The details are shown in Table 1. And selecting the current inflow submodule as the reference direction of the bridge arm current.
TABLE 1 Power device with Current flowing in different states
Taking the following bridge arm as an example (the upper bridge arm is similar), defining the instantaneous modulation ratio k as the ratio of the current number of the input modules of the bridge arm calculated according to the reference voltage to the total number of the modules of the bridge arm,
wherein u isdcRepresents the value of the direct-current side bus voltage of the MMC,
and represents the instantaneous value of the phase voltage on the MMC alternating side.
The mean equivalent model is considered as: in one leg, all submodules are thrown or thrown out equally at each time. On the premise, at any moment, the current of a certain submodule does not flow through one device according to the rule of table 1, but flows through a power device pair determined by the current direction after being weighted according to the switching probability. If the bridge arm current is iarmDefining sgn (x) as a sign function when x>0 is 1, otherwise 0, abs (x) is a function of absolute value, and the average equivalent meaning of the current through device pair D1/T2, the current through device D1, the average current through device D1, and the rms current can be calculated as follows.
iT1-D2＝abs{sgn[-iarm(t)]×iarm}
iT1(t)＝k(t)iT1-D2(t)
Wherein iarmIndicated as bridge arm current and T as a fundamental period, the current flowing through other power devices can also be obtained by using the method. Similarly, the rms value of the current flowing through the anode reactance can also be obtained:
the average equivalent model also ignores sub-module capacitance voltage fluctuations. Because the fluctuation of the sub-module capacitor voltage is usually required to be not more than 10% in engineering, and the sub-module capacitor voltage does not have fixed bias but fluctuates around a rated voltage along with the charge and discharge of a capacitor, the simplification can not bring overlarge errors to analysis.
Because the number of modules in the high-voltage large-capacity MMC is usually hundreds, the switching process of each sub-module is simulated by simulation calculation, and then the method for calculating the loss of the MMC through the actual current waveform of a device needs a large amount of calculation, and particularly when circuit parameters need to be frequently optimized and the loss of the sub-module needs to be estimated, the required calculation time is long. The average equivalent model can obtain the loss power of each device only by calculating the single submodule, and is suitable for evaluating the loss in the design and optimization stage of the current converter. In addition, the average value equivalent model can provide the current waveform flowing through the device in the average value sense, so that the reason of the loss difference of the device can be visually seen.
Specifically, the IGCT device loss analysis in step c includes two steps: and analyzing the on-state loss of the IGCT device and analyzing the switching loss of the IGCT device.
Specifically, during on-state loss analysis, similar to the on-state loss analysis of the IGBT device, a voltage drop exists on the turned-on IGCT device, and the voltage drop and the IGCT through-current have a nonlinear relationship, and can be performed in a linear-in-relation mannerFitting, i.e. the device conduction voltage drop vX1Divided into threshold voltages vX0And a slope resistance rXMultiplied by the through-current iXTwo parts, X represents any IGCT device: v. ofX1＝vX0+rXiX
And then obtaining a calculation formula of the on-state loss power of the device:
the first part can be equivalently charged by current to a constant voltage source, and the second part can be regarded as a resistor with fixed resistance value when the current flows through the resistor. Therefore, the average current of the device can be used to replace the primary current term of the above formula, and the root mean square current can be used to replace the secondary current term, so as to obtain the average power of the IGCT on-state loss:
wherein v isX0Expressed as the threshold voltage, I, of the IGCT deviceXmeanRepresents the average current, r, of the IGCT deviceXRepresenting the slope resistance, I, of the IGCT deviceXrmsRepresenting the root mean square current of the IGCT device.
Specifically, during switching loss analysis, the transient process of the IGCT switch is not ideal, and there is a time zone where the voltage and the current coincide, which may cause switching loss. Switching losses include IGCT turn-on losses, IGCT turn-off losses, and diode reverse recovery losses. Generally, switching loss data under specific voltage and current are given in a device data manual, and need to be converted into actual working conditions during analysis:
For the MMC sub-module, vb is the rated voltage V of the sub-moduleSM. Under the average equivalent model, taking the negative current direction as an example, cutting off the input sub-module, the process will turn off T1 and the current will be transferred to D2. Because the switching time is random, the magnitude of the T1 turn-off current can be regarded as one-time random sampling of the current flowing through the T1-D2 device, and statistically, the magnitude of the T1 turn-off current is the average current of the T1-D2 device in the current flowing time. Since the device averages the entire fundamental cycle period rather than the device-to-current period when calculating the average current, and within a single fundamental cycle, statistically:
wherein f isT1 switchRepresenting the actual switching frequency, f, of the T1 tubeSMThe submodule switching frequency is represented, so in the average value model, the switching frequency of T1 is considered to be the submodule switching frequency rather than the actual switching frequency, so that:
VSMrepresenting the rated voltage, I, of the sub-moduleT1meanRepresents the average value of the current flowing through the T1 device, EbNIndicating nominal IGCT single pulse on/off behavior loss energy, V, of the data sheetbNVoltage, I, corresponding to the energy loss of the nominal IGCT single-pulse on/off behavior of the data sheetbNCurrent, f, corresponding to the energy loss of the nominal IGCT single-pulse on/off behavior of the data sheetSMAnd representing the switching frequency of the MMC sub-module.
Specifically, the evaluation of the loss of the sub-module buffer circuit based on the average equivalent model in step c includes the following steps: direct resistance loss P to anode reactanceLCarrying out analysis; for the action loss P of the clamping circuitclAnd (6) carrying out analysis.
Direct resistance loss P to anode reactanceLAnalysis ofIn the time, since the anode reactance has a direct current resistance, when the MMC operates, a current flowing through the anode reactance causes a loss due to a joule effect. The loss calculation formula is:
wherein T represents the fundamental period, RLRepresenting the anode reactance DC resistance, iLRepresenting the anode reactive current. In the average value model, the anode reactance current root mean square value can be substituted for calculation: pL＝ILrms2RL，ILrmsRepresenting the anode reactance rms current.
For the action loss P of the clamping circuitclDuring analysis, the clamping circuit only acts in the transient process of switching of the sub-module, and both the joule effect of the clamping resistor and the reverse recovery of the clamping diode can cause energy loss. In a single action of the clamp, 70% of the anode reactive energy is dissipated in the clamp. The clamp circuit loses energy in a single action:
wherein L isaDenotes the value of the anode reactance inductance, ILRepresenting the pre-cut/post-plunge anodic reactance current.
Each switching transient causes the clamp circuit to act. Therefore, the action frequency of the clamping circuit is 2 times of the switching frequency of the submodule. In the average equivalent model, the current variation of the anode reactance in a single action of the clamp circuit is a random sampling of the current of the sub-module, and the current in a single loss is a quadratic term, so the loss of the clamp circuit can be calculated by the following formula:
wherein L isaDenotes the value of the anode reactance inductance, ISMrmsAnd f represents the effective value of the sub-module current (namely the effective value of the bridge arm current), and f represents the switching frequency.
And c, evaluating the loss of the sub-module energy taking power supply based on the average value equivalent model, wherein the power consumed by the energy taking power supply depends on the output power of the energy taking power supply. In the IGCT-MMC submodule, the output power of the driving power supply is mostly used for IGCT gate driving. Therefore, there is a need for an accurate estimation of gate drive power for IGCT in MMC operating conditions, comprising the steps of:
step c31, analyzing the gate drive power consumption of the IGCT device;
step c32, driving the gate of the IGCT device with constant currentGCalculating;
step c33, calculating the gate driving power of the IGCT device under the MMC working condition;
and c34, adding the driving power of the two IGCT gate poles in the IGCT-MMC sub-module, and considering the power of the control board card and the efficiency of the energy taking power supply to obtain the loss of the energy taking power supply.
Specifically, the gate drive principle and power consumption analysis of the IGCT gate drive mainly include a turn-on module, a turn-off module, and auxiliary circuits such as control protection and power supply. To ensure reliable and rapid turn-on of the IGCT, a pulse current needs to be injected into the gate during turn-on. In the on state, in order to avoid natural turn-off when the current crosses zero, a stable holding current needs to be injected. In the turn-off process, the turn-off module applies back pressure between the cathodes of the gate, so that the working current of the cathodes is pumped to the gate pole to complete turn-off. FIG. 3 is a schematic diagram showing the gate driving principle of the IGCT according to the embodiment of the present invention, in FIG. 3, A represents an IGCT anode, K represents an IGCT cathode, G represents an IGCT gate, and Q represents1、Q2MOS transistor, Q, showing controlled turn-on behaviorGMOS transistor for controlling turn-off, S current source of turn-on module in IGCT drive, V voltage source of turn-off module in IGCT drive, and COFFRepresenting the IGCT off capacitance.
According to principle analysis, the gate drive power consumption of the IGCT mainly comprises the following five parts:
1) static power consumption, namely power consumption of circuits such as control, detection, protection and the like, is relatively fixed;
2) in the opening action, the power consumption of injecting pulse current to the gate pole is positively correlated with the switching frequency;
3) in the on state, the power consumption of injecting steady-state current to the gate pole is positively correlated with the duty ratio;
4) in the turn-off action, the power consumption generated by the gate current drawn by the capacitor is positively correlated with the switching frequency and the turn-off current.
5) Losses generated by turning on the capacitor charging circuit, turning off the capacitor charging circuit, inputting the voltage stabilizing circuit and the like are related to the above four items.
Therefore, when the duty factor is ignored, the gate driving power of the IGCT device has a linear relationship with the turn-off current and the switching frequency.
Specifically, the gate drive power PG of the IGCT device during constant through-current is calculated, and the sub-module is an IGCT-Plus device which is produced by Zhongzhui semiconductor Limited and has the power-loss blocking capability and the high surge tolerance capability. Given different switching frequencies in the device data manual, fig. 4 shows a schematic diagram of a linear structure of the gate drive power-off current of the IGCT in an embodiment of the present invention. In fig. 4, the gate drive power of the IGCT device is approximately linear with the off current for a given frequency.
From the data of fig. 4, it is also possible to make the relationship between the gate drive power PG and the switching frequency f at a given off current, as shown in fig. 5, and in fig. 5, the relationship between the gate drive power PG and the switching frequency at a fixed off current is also linear, which is consistent with theoretical analysis.
IGCT gate drive power P under constant currentGAnd turn-off current IoffThe curved surface formed by the switching frequency f in the space rectangular coordinate system is a ruled surface, and the analytic formula is as follows: pG＝k1+k2f+k3Ioff+k4fIoffWherein f represents the switching frequency, IoffDenotes the off current, k1、k2、k3、k4A predetermined value.
In order to improve the fitting precision, four data points with long phase distance are taken and are substituted into a formula, and a linear equation set is solved, so that the values of four constants can be obtained. The final fit-derived gate drive power calculation formula is: pG＝7.51+0.0633f-0.005Ioff+0.0867fIoffIn the formula, the frequency unit Hz, the off-current unit kA, and the driving power unit W.
Specifically, when the gate driving power of the IGCT device is calculated in the MMC working condition in step c33, in the formula of step c32, the switching frequency is replaced by the switching frequency of the sub-module, and the off-current is replaced by the average current of the device pair corresponding to the IGCT, so as to calculate the gate driving power of the device. The power consumption of the energy taking power supply can be obtained by adding the driving powers of the two IGCT gate poles and considering the power of the control board card and the efficiency of the energy taking power supply.
The embodiment of the invention also provides an IGCT-MMC loss analysis example, which firstly describes the loss analysis basis and carries out analysis based on the data shown in the table 2:
TABLE 2 certain DC Back-to-Back project parameters
The selected IGCT device is CAC5000-45Plus, the anti-parallel diode is D2700U, and relevant parameters are shown in tables 3 and 4 respectively.
TABLE 3 characteristic parameters of IGCT
TABLE 4 characteristic parameters of the diodes
In order to fully protect the power semiconductor device, 0.8uH inductance value of anode reactance is selected to reduce di/dt of IGCT turn-on process to be below 3kA/us, and the reactance direct current resistance is 60 momega. In the calculation, the power of the control board card is 10W, and the conversion efficiency of the energy-taking power supply is 60%.
And obtaining a loss analysis result, calculating the loss of the IGCT-MMC submodule by using MATLAB programming by adopting an average value equivalent method, and obtaining a calculation result shown in a table 5. The table also attaches the loss data of the IGBT-MMC sub-module under the same working condition calculated by the same method as reference. The IGBT device is 4500V 3000A level crimping type device 5SNA 3000K452300 produced by ABB company, and the device is provided with an anti-parallel diode. The driving power of the single IGBT is calculated by 5W.
TABLE 5 Total loss calculation and comparison
According to the calculation result, although the IGCT-MMC scheme has losses such as anode reactance and a clamping circuit and the power consumption of the power-taking power supply is higher, the module pair loss of the IGCT-MMC scheme is reduced by 16% compared with that of the IGBT scheme due to the advantage of low loss of the device, and the IGCT scheme has obvious efficiency advantage.
In order to verify the reliability of the loss analysis method based on the average value equivalence, table 6 takes the rectification working condition as an example, compares the average value equivalence calculation with the device loss result obtained by the simulation calculation, and calculates the relative error based on the simulation calculation result. From the result, the errors are within 3%, and the average equivalent model has good accuracy.
TABLE 6 comparison of loss calculations for different algorithms
The invention evaluates the losses of a sub-module IGCT device, a buffer circuit, an energy-taking power supply and the like in the running process of the IGCT-MMC based on an average value equivalent model, and compares the losses with the loss of a same-level IGBT-MMC scheme. Due to the advantage of low-pass loss of the IGCT, although additional loss is caused by adding an auxiliary circuit due to the requirement of device characteristics, the total loss of the IGCT-MMC sub-module is still 16% lower than that of the IGBT-MMC scheme. Meanwhile, the average equivalent current calculation method adopted by the invention has the advantages of small operand, high accuracy and the like, and provides a more simple, convenient and accurate mode for IGCT-MMC submodule design and complete machine loss evaluation. Due to the lower loss of the IGCT and the potential of further development of the through-current and voltage resistance of the IGCT, the IGCT has a larger development prospect in the field of high-voltage large-capacity MMC.
Although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.
Claims (9)
Translated fromChinese
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