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CN112531355B - A ±45° dual-polarized millimeter-wave array antenna - Google Patents

A ±45° dual-polarized millimeter-wave array antenna
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CN112531355B
CN112531355BCN202011358184.0ACN202011358184ACN112531355BCN 112531355 BCN112531355 BCN 112531355BCN 202011358184 ACN202011358184 ACN 202011358184ACN 112531355 BCN112531355 BCN 112531355B
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integrated waveguide
metal layer
waveguide cavity
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杨清凌
高式昌
文乐虎
苏海滨
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CETC 22 Research Institute
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Abstract

The invention discloses a +/-45-degree dual-polarized millimeter wave array antenna which comprises a first metal layer, a first dielectric layer, a second metal layer, a bonding layer, a third metal layer, a second dielectric layer and a fourth metal layer which are sequentially stacked from bottom to top, wherein a lower metal array of a substrate integrated waveguide cavity is etched on the first metal layer. The +/-45-degree dual-polarized millimeter wave array antenna disclosed by the invention adopts a hybrid design of micro-strips and substrate integrated waveguide, and a dual-polarized array antenna with a feed network is designed in a limited space. The substrate integrated waveguide cavity is fed in an angle feeding mode, and good port isolation and cross polarization discrimination are obtained. The use of quarter-circle corner cut patches increases the operating bandwidth of the antenna.

Description

Translated fromChinese
一种±45°双极化毫米波阵列天线A ±45° dual-polarized millimeter-wave array antenna

技术领域technical field

本发明属于微波毫米波天线技术领域,特别涉及该领域中的一种±45°双极化毫米波阵列天线。The invention belongs to the technical field of microwave millimeter-wave antennas, and particularly relates to a ±45° dual-polarized millimeter-wave array antenna in the field.

背景技术Background technique

在无线通信系统中,天线是信号接收和发射的关键部件。随着无线移动通信技术的发展,要求微波毫米波天线在保证良好的电气性能的同时,还要能实现双极化、低剖面、低成本、易加工等特性。In a wireless communication system, the antenna is a key component for signal reception and transmission. With the development of wireless mobile communication technology, microwave and millimeter-wave antennas are required to achieve dual polarization, low profile, low cost, and easy processing while ensuring good electrical performance.

±45°双极化天线的实现方式主要有对称振子、波导交叉缝隙、印刷微带天线等等。对称振子天线具有结构简单,带宽宽,交叉极化低,半功率波瓣宽度等优势;缺点是在高频毫米波频段很难实现低剖面,且难以进行馈电。波导交叉缝隙具有交叉极化电平低、辐射效率高等特点;缺点是馈电网络体积庞大,设计天线阵时难以在单层上同时实现双极化馈电网络。印刷微带天线具有加工简单,剖面低等优势,但其缺点是带宽窄,损耗高,辐射效率低。近几年,随着基片集成波导作为一种新的天线设计结构,在毫米波频段上能够替代金属波导的作用,易于加工和与平面电路集成,是一种优良的毫米波天线设计结构。利用微带线在单层PCB上实现双极化馈电网络,同时利用基片集成波导进行天线结构设计是双极化毫米波天线设计的一种较好选择。The implementation methods of the ±45° dual-polarized antenna mainly include symmetrical vibrators, waveguide cross-slots, printed microstrip antennas, and so on. The symmetrical dipole antenna has the advantages of simple structure, wide bandwidth, low cross-polarization, and half-power lobe width; the disadvantage is that it is difficult to achieve a low profile in the high-frequency millimeter-wave frequency band, and it is difficult to feed. The waveguide cross slot has the characteristics of low cross-polarization level and high radiation efficiency; the disadvantage is that the feed network is bulky, and it is difficult to realize a dual-polarization feed network on a single layer at the same time when designing an antenna array. The printed microstrip antenna has the advantages of simple processing and low profile, but its disadvantages are narrow bandwidth, high loss and low radiation efficiency. In recent years, as a new antenna design structure, the substrate-integrated waveguide can replace the role of metal waveguides in the millimeter-wave frequency band. It is easy to process and integrate with planar circuits. It is an excellent millimeter-wave antenna design structure. Using microstrip lines to realize dual-polarization feeding network on single-layer PCB, and using substrate integrated waveguide to design antenna structure is a better choice for dual-polarization millimeter-wave antenna design.

例如,有人提出分别设计+45°和‒45°毫米波天线单元,然后分别组成线阵,交错排列来实现±45°双极化平面阵。报道的天线单元有开槽微带贴片或者45°倾斜缝隙单元。这样的设计优势是馈电网络不存在交叉,容易设计。但这些结构的缺点是天线尺寸较大,天线效率较低,且交叉极化鉴别率都小于20 dB。For example, it has been proposed to design +45° and ‒45° millimeter-wave antenna elements separately, and then form line arrays respectively and stagger them to achieve ±45° dual-polarized planar arrays. The reported antenna elements have slotted microstrip patches or 45° inclined slot elements. The advantage of such a design is that there is no crossover in the feeder network, and it is easy to design. However, the disadvantages of these structures are that the antenna size is large, the antenna efficiency is low, and the cross-polarization discrimination rate is less than 20 dB.

从现有的报道来看,虽然微带线和基片集成波导在天线设计中各具优势,但并没有很好地解决两者的矛盾,要么设计完全采用微带结构,要么设计完全采用基片集成波导结构。要同时解决损耗、双极化馈电网络设计、双极化天线单元设计、带宽、平面化等要求困难较大。From the existing reports, although the microstrip line and the substrate-integrated waveguide have their own advantages in antenna design, the contradiction between the two has not been well resolved. Either the design completely adopts the microstrip structure, or the design completely adopts the base Chip integrated waveguide structure. It is difficult to solve the requirements of loss, dual-polarized feed network design, dual-polarized antenna unit design, bandwidth, and planarization at the same time.

发明内容SUMMARY OF THE INVENTION

本发明所要解决的技术问题就是提供一种具有高交叉极化鉴别率、高口径效率、低剖面、易加工的±45°双极化毫米波阵列天线。The technical problem to be solved by the present invention is to provide a ±45° dual-polarized millimeter-wave array antenna with high cross-polarization discrimination rate, high aperture efficiency, low profile and easy processing.

本发明采用如下技术方案:The present invention adopts following technical scheme:

一种±45°双极化毫米波阵列天线,其改进之处在于:包括从下到上依次层叠设置的第一金属层、第一介质层、第二金属层、粘结层、第三金属层、第二介质层和第四金属层,在第一金属层上蚀刻有基片集成波导腔体下层金属阵列,N条级联馈电网络和M个功分器,N为大于等于4的偶数,M为大于等于2的自然数,两条级联馈电网络之间通过功分器连接在一起,基片集成波导腔体采用角馈且为方形带两个端口结构,信号分别从其两侧的两条级联馈电网络经过两个端口流入,第一介质层内部有基片集成波导腔体金属化通孔、级联馈电网络接地贴片金属化通孔和功分器接地贴片金属化通孔,第二金属层和第三金属层为地板层,均蚀刻有与基片集成波导腔体阵列位置相对、数量相同的交叉十字缝隙阵列,且各交叉十字缝隙的方向与其相对应基片集成波导腔体对角线的方向一致,由基片集成波导腔体激励交叉十字缝隙,粘结层将第二金属层和第三金属层粘合为一体,第四金属层上蚀刻有与交叉十字缝隙阵列位置相对、数量相同的微带辐射贴片阵列,且微带辐射贴片方向与其相对应的交叉十字缝隙方向一致,微带辐射贴片受交叉十字缝隙的激励产生双极化辐射。A ±45° dual-polarized millimeter-wave array antenna, which is improved in that it includes a first metal layer, a first dielectric layer, a second metal layer, an adhesive layer, and a third metal layer that are sequentially stacked from bottom to top layer, the second dielectric layer and the fourth metal layer, on the first metal layer is etched a substrate-integrated waveguide cavity lower metal array, N cascaded feed networks and M power dividers, where N is greater than or equal to 4 Even number, M is a natural number greater than or equal to 2, the two cascaded feed networks are connected together by a power divider, the substrate-integrated waveguide cavity adopts an angle feed and has a square structure with two ports. The two cascaded feeder networks on the side flow in through two ports. Inside the first dielectric layer, there are metallized through holes in the substrate integrated waveguide cavity, the cascaded feeder network grounding patch metallized through holes and the power divider grounding patch. Sheet metallized through holes, the second metal layer and the third metal layer are the floor layers, both of which are etched with a cross-slot array with the same position and the same number as the substrate-integrated waveguide cavity array, and the direction of each cross-slot is the same as that of the substrate. Corresponding to the direction of the diagonal lines of the integrated waveguide cavity on the substrate, the crossed slits are excited by the integrated waveguide cavity on the substrate, the second metal layer and the third metal layer are bonded together by the adhesive layer, and the fourth metal layer is etched There are microstrip radiation patch arrays with the same number and position opposite to the crossed slot array, and the direction of the microstrip radiation patch is consistent with the direction of the corresponding crossed slot. The microstrip radiation patch is excited by the crossed slot to generate bipolar chemical radiation.

进一步的,级联馈电网络由微带线组成,在微带线的弯曲处设有接地贴片。Further, the cascaded feeding network consists of microstrip lines, and ground patches are provided at the bends of the microstrip lines.

进一步的,功分器由微带线组成,功分器的两个微带臂各与一条级联馈电网络连接在一起,在两个微带臂中间设有接地贴片。Further, the power divider is composed of microstrip lines, the two microstrip arms of the power divider are each connected with a cascade feeding network, and a ground patch is arranged between the two microstrip arms.

进一步的,基片集成波导腔体通过方形金属化通孔实现,基片集成波导腔体内还包括微带线,激励基片集成波导腔体的两个端口可分别在腔体内产生TE120和TE210模式电场。Further, the substrate-integrated waveguide cavity is realized by a square metallized through hole, and the substrate-integrated waveguide cavity also includes microstrip lines. Exciting the two ports of the substrate-integrated waveguide cavity can generate TE120 and TE in the cavity respectively.210 mode electric field.

进一步的,第四金属层上蚀刻的四个微带辐射贴片分别有四分之一圆形切角,且通过十字细微带连接起来。Further, the four microstrip radiation patches etched on the fourth metal layer respectively have quarter-round cut corners and are connected by cross microstrips.

进一步的,阵列天线含有2×8个包含基片集成波导腔体的天线单元,其中心频率为28 GHz。Further, the array antenna contains 2×8 antenna elements including substrate-integrated waveguide cavities, and the center frequency is 28 GHz.

进一步的,第一介质层为RO4003C,介电常数为3.55,损耗角正切为0.0027,厚度为0.305 mm;第二介质层也为RO4003C,厚度为0.508 mm;粘结层为RO4450F,厚度为0.2mm,介电常数为3.52,损耗角正切为0.004;第一、二、三、四金属层均为金属敷铜层,厚度均为0.5盎司;整个阵列天线的剖面高度为0.076个自由空间波长,基片集成波导腔体尺寸为5.4 mm×5.4 mm;交叉十字缝隙长度和宽度分别为 2.84 mm和0.3 mm;微带辐射贴片的宽度为2.19 mm,其四分之一圆形切角半径为1.46 mm,微带辐射贴片与贴片之间的间隙宽度为0.45mm,十字细微带的宽度为0.17 mm。Further, the first dielectric layer is RO4003C, the dielectric constant is 3.55, the loss tangent is 0.0027, and the thickness is 0.305 mm; the second dielectric layer is also RO4003C, with a thickness of 0.508 mm; the adhesive layer is RO4450F, with a thickness of 0.2 mm , the dielectric constant is 3.52, and the loss tangent is 0.004; the first, second, third, and fourth metal layers are all metal-clad copper layers with a thickness of 0.5 ounces; the cross-sectional height of the entire array antenna is 0.076 free-space wavelengths. The size of the chip-integrated waveguide cavity is 5.4 mm×5.4 mm; the length and width of the cross-cross slot are 2.84 mm and 0.3 mm, respectively; the width of the microstrip radiation patch is 2.19 mm, and its quarter-circle chamfering radius is 1.46 mm mm, the width of the gap between the microstrip radiation patch and the patch is 0.45 mm, and the width of the cross microstrip is 0.17 mm.

本发明的有益效果是:The beneficial effects of the present invention are:

本发明所公开的±45°双极化毫米波阵列天线,采用微带和基片集成波导混合设计,在有限的空间中设计出带馈电网络的双极化阵列天线。通过角馈的方式对基片集成波导腔体进行馈电,获得了较好的端口隔离度和交叉极化鉴别率。采用了四分之一圆形切角的贴片增加了天线的工作带宽。本发明所公开的±45°双极化毫米波阵列天线,相对阻抗带宽可达13.6%,2dB 增益带宽可达6%,端口隔离度在整个阻抗带宽都大于20 dB,交叉极化鉴别率为25 dB。 相比报道的±45°双极化毫米波平面阵列,本发明的阵列天线具有尺寸小,口径效率高,交叉极化鉴别率高等优势。在结构简单、极低剖面和高集成度的前提下,能同时实现馈电网络和阵列天线一体化设计,拥有较好的天线性能。The ±45° dual-polarized millimeter-wave array antenna disclosed in the invention adopts the hybrid design of microstrip and substrate integrated waveguide, and designs a dual-polarized array antenna with a feeding network in a limited space. The substrate-integrated waveguide cavity is fed by means of angle feed, and better port isolation and cross-polarization discrimination rate are obtained. Patches with quarter-round chamfers increase the operating bandwidth of the antenna. The ±45° dual-polarized millimeter-wave array antenna disclosed in the invention has a relative impedance bandwidth of 13.6%, a 2dB gain bandwidth of up to 6%, the port isolation is greater than 20 dB in the entire impedance bandwidth, and the cross-polarization discrimination rate is 25dB. Compared with the reported ±45° dual-polarized millimeter-wave planar array, the array antenna of the present invention has the advantages of small size, high aperture efficiency, and high cross-polarization discrimination rate. Under the premise of simple structure, extremely low profile and high integration, the integrated design of feeding network and array antenna can be realized at the same time, and it has better antenna performance.

附图说明Description of drawings

图1是本发明实施例1所公开阵列天线的结构示意图;FIG. 1 is a schematic structural diagram of the array antenna disclosed in Embodiment 1 of the present invention;

图2是本发明实施例1所公开阵列天线的层叠图;FIG. 2 is a stacking diagram of the array antenna disclosed in Embodiment 1 of the present invention;

图3是本发明实施例1所公开阵列天线中级联馈电网络的示意图;3 is a schematic diagram of a cascaded feeding network in the array antenna disclosed in Embodiment 1 of the present invention;

图4是本发明实施例1所公开阵列天线中功分器的示意图;4 is a schematic diagram of a power divider in the array antenna disclosed in Embodiment 1 of the present invention;

图5是本发明实施例1所公开阵列天线中基片集成波导腔体的示意图;5 is a schematic diagram of a substrate-integrated waveguide cavity in the array antenna disclosed in Embodiment 1 of the present invention;

图6是本发明实施例1所公开阵列天线中地板层蚀刻的交叉耦合缝隙示意图;6 is a schematic diagram of a cross-coupling slot etched in the floor layer in the array antenna disclosed in Embodiment 1 of the present invention;

图7是本发明实施例1所公开阵列天线中微带辐射贴片的示意图。7 is a schematic diagram of a microstrip radiation patch in the array antenna disclosed in Embodiment 1 of the present invention.

具体实施方式Detailed ways

为了使本发明的目的、技术方案及优点更加清楚明白,以下结合附图和实施例,对本发明进行进一步详细说明。应当理解,此处所描述的具体实施例仅仅用以解释本发明,并不用于限定本发明。In order to make the objectives, technical solutions and advantages of the present invention clearer, the present invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention, but not to limit the present invention.

实施例1,如图1-2所示,本实施例公开了一种±45°双极化毫米波阵列天线,包括从下到上依次层叠设置的第一金属层11、第一介质层12、第二金属层13、粘结层14、第三金属层15、第二介质层16和第四金属层17,在第一金属层上蚀刻有基片集成波导腔体下层金属23阵列,4条级联馈电网络和2个功分器,两条级联馈电网络之间通过功分器连接在一起,如图5所示,基片集成波导腔体21采用角馈且为方形带两个端口25、26结构,这样有利于增加端口之间的隔离度和降低交叉极化,同时也有利于天线的小型化和方便馈电。信号分别从其两侧的两条级联馈电网络经过两个端口流入,第一介质层内部有基片集成波导腔体金属化通孔22、级联馈电网络接地贴片金属化通孔513和功分器接地贴片金属化通孔66,来调节馈电网络和功分器的阻抗匹配。第二金属层和第三金属层为地板层31,如图6所示,均蚀刻有与基片集成波导腔体阵列位置相对、数量相同的交叉十字缝隙32、33阵列,且各交叉十字缝隙的方向与其相对应基片集成波导腔体对角线的方向一致,由基片集成波导腔体激励交叉十字缝隙,粘结层将第二金属层和第三金属层粘合为一体,第四金属层上蚀刻有与交叉十字缝隙阵列位置相对、数量相同的微带辐射贴片阵列41,且微带辐射贴片方向与其相对应的交叉十字缝隙方向一致,微带辐射贴片受交叉十字缝隙的激励产生双极化辐射。Embodiment 1, as shown in Figures 1-2, this embodiment discloses a ±45° dual-polarized millimeter-wave array antenna, which includes afirst metal layer 11 and a firstdielectric layer 12 that are sequentially stacked from bottom to top , thesecond metal layer 13, thebonding layer 14, thethird metal layer 15, the seconddielectric layer 16 and thefourth metal layer 17, on the first metal layer is etched a substrate integrated waveguide cavitylower layer metal 23 array, 4 A cascaded feeder network and two power dividers are connected together by a power divider, as shown in Figure 5, the substrate integratedwaveguide cavity 21 adopts an angle feed and is a square strip The structure of the twoports 25 and 26 is beneficial to increase the isolation between the ports and reduce the cross-polarization, and is also beneficial to the miniaturization of the antenna and the convenience of feeding. Signals flow in from the two cascaded feeder networks on both sides of it respectively through two ports. Inside the first dielectric layer, there are metallized throughholes 22 of the substrate integrated waveguide cavity and the ground patch metallized through holes of the cascaded feeder network. 513 and the power divider ground patch metallized throughhole 66 to adjust the impedance matching of the feed network and the power divider. The second metal layer and the third metal layer are thefloor layer 31. As shown in FIG. 6, they are both etched with an array ofcross-shaped slits 32 and 33 in the same number and opposite to the substrate-integrated waveguide cavity array. The direction of the corresponding substrate-integrated waveguide cavity is the same as the diagonal direction of the corresponding substrate-integrated waveguide cavity. The substrate-integrated waveguide cavity excites the crossed slits, and the adhesive layer bonds the second metal layer and the third metal layer into one. The metal layer is etched with microstripradiation patch arrays 41 in the same number and opposite to the cross-cross slot array, and the direction of the microstrip radiation patch is consistent with the direction of the corresponding cross-cross slot. The microstrip radiation patch is affected by the cross-cross slot. The excitation produces dual polarized radiation.

在双极化阵列天线设计中,因为空间的限制,馈电网络的设计往往比较困难和复杂。本实施例设计的馈电网络为级联式馈电网络,如图3所示,级联馈电网络由微带线512组成,在微带线的弯曲处设有接地贴片511来降低回波损耗和寄生效应。通过调节510三个四分之一波长微带线的宽度,可以实现较好的匹配效果。In the design of dual-polarized array antennas, the design of the feed network is often difficult and complicated due to space constraints. The feeder network designed in this embodiment is a cascade feeder network. As shown in FIG. 3 , the cascade feeder network is composed ofmicrostrip lines 512 , andground patches 511 are provided at the bends of the microstrip lines to reduce backflow. wave loss and parasitic effects. By adjusting the width of the three quarter-wavelength microstrip lines 510, a better matching effect can be achieved.

如图4所示,功分器用于将能量传递给每个级联馈电网络,功分器由微带线组成,功分器的两个微带臂各与一条级联馈电网络连接在一起,在两个微带臂中间设有接地贴片64来降低回波损耗。As shown in Figure 4, the power divider is used to transfer energy to each cascaded feeder network. The power divider is composed of microstrip lines. The two microstrip arms of the power divider are each connected to a cascaded feeder network. Together, aground patch 64 is placed between the two microstrip arms to reduce return loss.

基片集成波导腔体通过方形金属化通孔实现,基片集成波导腔体内还包括用于阻抗匹配的微带线24,激励基片集成波导腔体的两个端口可分别在腔体内产生TE120和TE210模式电场。The substrate-integrated waveguide cavity is realized by a square metallized through hole. The substrate-integrated waveguide cavity also includes amicrostrip line 24 for impedance matching. Exciting the two ports of the substrate-integrated waveguide cavity can generate TE in the cavity respectively.120 and TE210 mode electric fields.

如图7所示,第四金属层上蚀刻的四个微带辐射贴片分别有四分之一圆形切角,且通过十字细微带42连接起来。这样的设计可增加天线的感性,便于调节阻抗匹配,拓展阻抗带宽。As shown in FIG. 7 , the four microstrip radiation patches etched on the fourth metal layer respectively have quarter-round cut corners and are connected bycross microstrips 42 . Such a design can increase the inductance of the antenna, facilitate the adjustment of impedance matching, and expand the impedance bandwidth.

阵列天线含有2×8个包含基片集成波导腔体的天线单元,其中心频率为28 GHz,对其在HFSS中进行全波电磁仿真。A full-wave electromagnetic simulation in HFSS was performed for an array antenna containing 2 × 8 antenna elements containing a substrate-integrated waveguide cavity with a center frequency of 28 GHz.

第一介质层为RO4003C,介电常数为3.55,损耗角正切为0.0027,厚度为0.305 mm;第二介质层也为RO4003C,厚度为0.508 mm;粘结层为RO4450F,厚度为0.2mm,介电常数为3.52,损耗角正切为0.004;第一、二、三、四金属层均为金属敷铜层,厚度均为0.5盎司;整个阵列天线的剖面高度为0.076个自由空间波长,基片集成波导腔体尺寸为5.4 mm×5.4 mm;交叉十字缝隙长度和宽度分别为 2.84 mm和0.3 mm;微带辐射贴片的宽度为2.19 mm,其四分之一圆形切角半径为1.46 mm,微带辐射贴片与贴片之间的间隙宽度为0.45mm,十字细微带的宽度为0.17 mm。The first dielectric layer is RO4003C with a dielectric constant of 3.55, a loss tangent of 0.0027 and a thickness of 0.305 mm; the second dielectric layer is also RO4003C with a thickness of 0.508 mm; the adhesive layer is RO4450F with a thickness of 0.2 mm and a dielectric The constant is 3.52, and the loss tangent is 0.004; the first, second, third, and fourth metal layers are all metal-clad copper layers with a thickness of 0.5 ounces; the section height of the entire array antenna is 0.076 free-space wavelengths, and the substrate integrates waveguides The size of the cavity is 5.4 mm × 5.4 mm; the length and width of the cross-cross slot are 2.84 mm and 0.3 mm, respectively; the width of the microstrip radiation patch is 2.19 mm, and its quarter-circle corner radius is 1.46 mm, and the microstrip radiation patch has a radius of 1.46 mm. The width of the gap between the strip radiating patch and the patch is 0.45 mm, and the width of the cross microstrip is 0.17 mm.

本实施例公开了一种既能实现±45°双极化,又具有高交叉极化鉴别率、高口径效率、低剖面、易加工、低成本的微波毫米波平面阵列天线。该±45°双极化阵列天线采用一个交叉耦合缝隙来激励微带天线单元。交叉耦合缝隙蚀刻于一个支持对角TE120和TE210模式的基片集成波导结构腔体上。由于TE120和TE210模式的正交性,此时天线具有很高的端口隔离度和很低的交叉极化。同时,采用对角激励也有利于天线的小型化和馈电网络的设计。通过十字金属带将四个微带贴片连接在一起来改善天线的阻抗带宽。这种阵列天线其单元交叉极化电平高于32 dB。加上馈电网络后,天线阵的阻抗带宽可达13.6%。阵列天线采用了级联馈电方式。为了降低一致高频工作时微带线不连续处强烈的寄生效应,在微带线弯曲处插入了一个接地贴片。本实施例适合用于微波毫米波领域,来解决高频天线设计中±45°双极化实现的技术难点。This embodiment discloses a microwave and millimeter-wave planar array antenna capable of achieving ±45° dual polarization, high cross-polarization discrimination rate, high aperture efficiency, low profile, easy processing and low cost. The ±45° dual-polarized array antenna uses a cross-coupling slot to excite the microstrip antenna element. Cross-coupling slits are etched into a substrate-integrated waveguide structure cavity supporting diagonal TE120 and TE210 modes. Due to the orthogonality of the TE120 and TE210 modes, the antenna has high port isolation and low cross-polarization. At the same time, the use of diagonal excitation is also beneficial to the miniaturization of the antenna and the design of the feeding network. The impedance bandwidth of the antenna is improved by connecting the four microstrip patches together with cross metal strips. The element cross-polarization level of this array antenna is higher than 32 dB. After adding the feeding network, the impedance bandwidth of the antenna array can reach 13.6%. The array antenna adopts the cascade feeding method. In order to reduce the strong parasitic effect at the discontinuity of the microstrip line when operating at uniform high frequencies, a ground patch is inserted at the bend of the microstrip line. This embodiment is suitable for use in the field of microwave and millimeter waves to solve the technical difficulty of implementing ±45° dual polarization in high-frequency antenna design.

天线单元的仿真结果表明,两个端口之间的隔离度在中心频率为28 dB,交叉极化鉴别率为32 dB,工作带宽为27.2 GHz-28.8 GHz,在此范围内增益值为6.2 dBi-7.2dBi。加上馈电网络之后的仿真结果表明,该天线阵的阻抗带宽为13.6%,2 dB增益带宽为6%,中心频率增益为16.7 dBi,交叉极化鉴别率为25 dB。The simulation results of the antenna unit show that the isolation between the two ports is 28 dB at the center frequency, the cross-polarization discrimination is 32 dB, the operating bandwidth is 27.2 GHz-28.8 GHz, and the gain value in this range is 6.2 dBi- 7.2dBi. The simulation results after adding the feeding network show that the impedance bandwidth of the antenna array is 13.6%, the 2 dB gain bandwidth is 6%, the center frequency gain is 16.7 dBi, and the cross-polarization discrimination rate is 25 dB.

Claims (5)

1. The utility model provides a 45 double polarization millimeter wave array antenna which characterized in that: the substrate integrated waveguide cavity comprises a first metal layer, a first dielectric layer, a second metal layer, a bonding layer, a third metal layer, a second dielectric layer and a fourth metal layer which are sequentially stacked from bottom to top, wherein a lower metal array of a substrate integrated waveguide cavity is etched on the first metal layer, N cascaded feed networks and M power dividers are arranged, N is an even number larger than or equal to 4, M is a natural number larger than or equal to 2, the two cascaded feed networks are connected together through the power dividers, the substrate integrated waveguide cavity adopts an angular feed and square structure with two ports, signals respectively flow in from the two cascaded feed networks on two sides of the substrate integrated waveguide cavity through the two ports, a substrate integrated waveguide cavity metalized through hole, a cascaded feed network grounding patch metalized through hole and a power divider grounding patch metalized through hole are arranged in the first dielectric layer, the second metal layer and the third metal layer are floor layers, and the substrate integrated waveguide cavity array position is opposite to that of the substrate integrated waveguide cavity array, The array of the crossed cross slots with the same quantity, and the direction of each crossed cross slot is consistent with the direction of the diagonal line of the corresponding substrate integrated waveguide cavity, the substrate integrated waveguide cavity excites the crossed cross slots, the bonding layer bonds the second metal layer and the third metal layer into a whole, the fourth metal layer is etched with the array of the microstrip radiation patches with the same quantity and the position opposite to the crossed cross slot array, and the direction of the microstrip radiation patches is consistent with the direction of the corresponding crossed cross slots, and the microstrip radiation patches generate dual-polarization radiation under the excitation of the crossed cross slots; the cascade feed network consists of microstrip lines, and a grounding patch is arranged at the bent part of the microstrip lines; the four micro-strip radiation patches etched on the fourth metal layer are respectively provided with a quarter-circle corner cut and are connected through a cross micro-strip.
5. The ± 45 ° dual polarized millimeter wave array antenna according to claim 1, wherein: the first dielectric layer is RO4003C, the dielectric constant is 3.55, the loss tangent is 0.0027, and the thickness is 0.305 mm; the second medium layer is also RO4003C, and the thickness is 0.508 mm; the adhesive layer is RO4450F, the thickness is 0.2mm, the dielectric constant is 3.52, and the loss tangent is 0.004; the first, second, third and fourth metal layers are all metal copper clad layers, and the thicknesses are all 0.5 ounce; the cross section height of the whole array antenna is 0.076 free space wavelengths, and the size of a substrate integrated waveguide cavity is 5.4 mm multiplied by 5.4 mm; the length and the width of the crossed cross gap are respectively 2.84 mm and 0.3 mm; the width of the microstrip radiation patch is 2.19 mm, the radius of a quarter of a circle corner cut of the microstrip radiation patch is 1.46 mm, the width of a gap between the microstrip radiation patch and the patch is 0.45mm, and the width of the cross-shaped thin microstrip is 0.17 mm.
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