CN112281126A - Reactive magnetron sputtering separation type gas distribution method - Google Patents

Abstract

The invention discloses a reaction magnetron sputtering separation type gas distribution method, which comprises a gas flow controller, a sealing box, a magnetron sputtering plasma physical surface basic baffle plate and a sputtered glass substrate, wherein the lower end of the gas flow controller is connected with the sealing box, the front end of the gas flow controller is provided with a gas flow display window, one side of the gas flow controller is provided with a gas inlet pipe, the gas outlet end of the gas inlet pipe is connected with a gas flowmeter, the gas flowmeter is connected with a gas on-off electromagnetic valve through a connector, the gas on-off electromagnetic valve is connected with a goldenrain student target gas distribution shunt tee joint through a connecting pipe, two ends of the goldenrain student target gas distribution shunt tee joint are both connected with gas input pipes, and the gas outlet end of the gas input pipe is connected with. The invention solves the problems of low sputtering rate and easy nodulation on the target surface of the traditional mixed gas input method for reactive magnetron sputtering coating.

Description

Reactive magnetron sputtering separation type gas distribution method

Technical Field

The invention relates to the field of reactive magnetron sputtering coating, in particular to a reactive magnetron sputtering separation type gas distribution method.

Background

In the process of reactive magnetron sputtering coating, the action of the sputtering particles and the reaction gas not only occurs on the surface of the substrate but also occurs on the surface of the sputtering target material, when a certain amount of oxides are deposited on the surface of the sputtering target material, nodules are formed, the target surface has a sparking phenomenon, the sputtering plasma loses stability, and the target poisoning is commonly known.

At present, the traditional mixed gas input method is used in the reactive magnetron sputtering coating industry, working gas and reactive gas are input into a gas flow control system after passing through a mixing device, the mixed gas input method has the advantages that the diffusion of the two gases is more uniform, a group of gas distribution devices is saved, the occupied space is saved, and the like, but target poisoning is easily caused because the reactive gas is too close to a sputtering target surface.

Disclosure of Invention

The present invention is directed to solving the above problems and providing a reactive magnetron sputtering separation type gas distribution method.

The invention realizes the purpose through the following technical scheme:

a reaction magnetron sputtering separation type gas distribution method comprises a gas flow controller, a seal box, a magnetron sputtering plasma physical surface basic baffle and a sputtered glass substrate, wherein the lower end of the gas flow controller is connected with the seal box, the front end of the gas flow controller is provided with a gas flow display window, one side of the gas flow controller is provided with a gas inlet pipe, the gas outlet end of the gas inlet pipe is connected with a gas flowmeter, the gas flowmeter is connected with a gas on-off electromagnetic valve through a connector, the gas on-off electromagnetic valve is connected with a Koelreuterian gas distribution tee joint through a connecting pipe, two ends of the Koelreuterian gas distribution tee joint are both connected with gas input pipes, the gas outlet end of the gas input pipe is connected with a labyrinth gas distribution device, a labyrinth gas distribution device gas diffusion small hole is arranged on the labyrinth gas distribution device, and the front end, the device is characterized in that a sputtered glass substrate is arranged in the sealing box, two magnetron sputtering rotary cathode target-to-target working gas labyrinth gas distribution devices are arranged on the lower side of the sputtered glass substrate, a magnetron sputtering plasma physical surface basic baffle is arranged on the lower side of the magnetron sputtering rotary cathode target-to-target working gas labyrinth gas distribution devices, a magnetron sputtering plasma physical surface adjustable baffle is arranged between the magnetron sputtering plasma physical surface basic baffles, connecting screw holes are formed in the front side and the two sides of the magnetron sputtering plasma physical surface basic baffle, two magnetron sputtering rotary cathode target-to-target reaction gas labyrinth gas distribution devices are arranged on the lower side of the magnetron sputtering plasma physical surface basic baffle, and the inner parts of the magnetron sputtering rotary cathode target-to-target working gas labyrinth gas distribution devices and the magnetron sputtering rotary cathode target-to-target reaction gas labyrinth gas distribution devices are both connected with the labyrinth gas distribution devices, two magnetron sputtering rotating cathode goldenrain butt targets are arranged on the lower side of the magnetron sputtering rotating cathode target reaction gas labyrinth gas distribution device, and magnetron sputtering rotating cathode goldenrain butt magnetron magnetic field sources are arranged on the inner sides of the magnetron sputtering rotating cathode goldenrain butt targets.

Preferably: the gas flow control instrument is provided with two groups which are respectively connected with external argon and oxygen, and the first group of the connecting pipe is connected with the inner side of the labyrinth gas distribution device of the magnetron sputtering rotating cathode to the target working gas labyrinth gas distribution device, and the second group of the connecting pipe is connected with the inner side of the labyrinth gas distribution device of the magnetron sputtering rotating cathode to the target reaction gas labyrinth gas distribution device.

So set up, utilize two sets of gas flow control appearance controls argon gas and oxygen respectively to improve control accuracy.

Preferably: the connector is connected with the gas flowmeter and the gas on-off electromagnetic valve through threads, and the connecting pipe is connected with the gas on-off electromagnetic valve and the goldenrain target gas distribution shunting tee joint through threads.

So set up, guaranteed through threaded connection, sealed effect.

Preferably: the connecting screw hole is formed in the magnetron sputtering plasma physical surface basic baffle, the magnetron sputtering plasma physical surface basic baffle is connected with the sealing box through a screw, and the magnetron sputtering plasma physical surface adjustable baffle is in sliding connection with the magnetron sputtering plasma physical surface basic baffle.

According to the arrangement, the magnetron sputtering plasma physical surface basic baffle and the magnetron sputtering plasma physical surface adjustable baffle play a role in blocking, and the magnetron sputtering plasma physical surface adjustable baffle can change positions according to requirements so as to adapt to different reaction environments.

Preferably: the gas input pipe is connected with the goldenrain target gas distribution flow dividing tee joint and the labyrinth gas distribution device through threads, and gas diffusion small holes of the labyrinth gas distribution device are integrally formed in the labyrinth gas distribution device.

So set up, labyrinth gas distribution device plays the gas distribution effect to make argon gas and oxygen can fully distribute.

Compared with the prior art, the invention has the following beneficial effects:

1. by implementing the working gas and reaction gas separated gas distribution method, the reaction gas reaching the target surface can be effectively reduced, the action of the reaction gas and the target surface is weakened, the target surface is kept in a metal mode sputtering state with a high sputtering rate, and the deposition of a chemical compound film with a chemical ratio can be formed on the substrate due to more reaction gas molecules near the surface of the substrate, so that the high sputtering rate is obtained, the nodule formation on the surface of the target is reduced, and the target poisoning period is effectively prolonged.

Drawings

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.

FIG. 1 is a schematic structural diagram of a reactive magnetron sputtering separation type gas distribution method according to the present invention;

FIG. 2 is a schematic view of a first structure inside a sealed box of the reactive magnetron sputtering separation type gas distribution method according to the present invention;

FIG. 3 is a schematic view of a second structure inside a sealed box of the reactive magnetron sputtering separation type gas distribution method according to the present invention;

FIG. 4 is a front view of the inside of a sealed box for a reactive magnetron sputtering separation type gas distribution method according to the present invention;

FIG. 5 is a schematic structural diagram of a basic baffle plate of a physical surface of a magnetron sputtering plasma of a reactive magnetron sputtering separation type gas distribution method according to the present invention;

FIG. 6 is a schematic structural view of a labyrinth gas distribution device for a reactive magnetron sputtering separation-type gas distribution method according to the present invention;

FIG. 7 is a schematic structural diagram of a gas flowmeter according to the reactive magnetron sputtering separation-type gas distribution method of the present invention.

The reference numerals are explained below:

1. a gas flow controller; 2. a gas flow display window; 3. a gas flow meter; 4. a gas on-off solenoid valve; 5. a connector; 6. an air inlet pipe; 7. a connecting pipe; 8. the Koelreuteria paniculata target gas distribution shunt tee joint; 9. a gas input pipe; 10. a labyrinth air distribution device; 11. gas diffusion pores of the labyrinth gas distribution device; 12. a sealing box; 13. a sealing cover; 14. a sputtered glass substrate; 15. a magnetron sputtering rotating cathode target-to-target working gas labyrinth gas distribution device; 16. a magnetron sputtering rotating cathode target reaction gas labyrinth gas distribution device; 17. a basic baffle plate of a physical surface of the magnetron sputtering plasma; 18. the baffle plate can be regulated and controlled on the physical surface of the magnetron sputtering plasma; 19. magnetron sputtering rotating cathode goldenrain butt; 20. magnetron sputtering rotating cathode goldenrain generator target magnetic control magnetic field source; 21. and connecting the screw hole.

Detailed Description

In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like, indicate orientations or positional relationships based on those shown in the drawings, and are used only for convenience in describing the present invention and for simplicity in description, and do not indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and thus, are not to be construed as limiting the present invention. Furthermore, the terms "first", "second", etc. are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first," "second," etc. may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless otherwise specified.

In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art through specific situations.

The invention will be further described with reference to the accompanying drawings in which:

example 1

As shown in fig. 1-7, a reaction magnetron sputtering separation type gas distribution method comprises agas flow controller 1, aseal box 12, a magnetron sputtering plasma physical surfacebasic baffle 17, a sputteredglass substrate 14, the lower end of thegas flow controller 1 is connected with theseal box 12, the front end of thegas flow controller 1 is provided with a gasflow display window 2, one side of thegas flow controller 1 is provided with agas inlet pipe 6, the gas outlet end of thegas inlet pipe 6 is connected with agas flowmeter 3, thegas flowmeter 3 is connected with a gas on-offelectromagnetic valve 4 through a connector 5, the gas on-offelectromagnetic valve 4 is connected with a Koelreuterian gasdistribution tee joint 8 through a connectingpipe 7, two ends of the Kohlenbergan gasdistribution tee joint 8 are both connected with gas input pipes 9, the gas outlet end of the gas input pipe 9 is connected with a labyrinthgas distribution device 10, the labyrinthgas distribution device 10, the front end of asealing box 12 is provided with asealing cover 13, a sputteredglass substrate 14 is arranged in thesealing box 12, two magnetron sputtering rotating cathode target-to-target working gas labyrinthgas distribution devices 15 are arranged on the lower side of the sputteredglass substrate 14, a magnetron sputtering plasma physical surfacebasic baffle plate 17 is arranged on the lower side of the magnetron sputtering rotating cathode target-to-working gas labyrinthgas distribution device 15, a magnetron sputtering plasma physical surfaceadjustable baffle plate 18 is arranged between the magnetron sputtering plasma physical surfacebasic baffle plates 17, connectingscrew holes 21 are formed on the front side and the two sides of the magnetron sputtering plasma physical surfacebasic baffle plate 17, two magnetron sputtering rotating cathode target-to-target reaction gas labyrinthgas distribution devices 16 are arranged on the lower side of the magnetron sputtering plasma physical surfacebasic baffle plate 17, the magnetron sputtering rotating cathode target-to-target working gas labyrinthgas distribution devices 15 and the magnetron sputtering rotating cathode target-to-target reaction gas labyrinthgas distribution devices 16 are both connected with the labyrinthgas distribution devices 10, two magnetron sputtering rotating cathodegoldenrain butt targets 19 are arranged at the lower side of the magnetron sputtering rotating cathode target reaction gas labyrinthgas distribution device 16, and a magnetron sputtering rotating cathode goldenrain butt magnetronmagnetic field source 20 is arranged at the inner side of the magnetron sputtering rotating cathodegoldenrain butt targets 19.

Preferably: the gasflow control instrument 1 is provided with two groups which are respectively connected with external argon and oxygen, a connectingpipe 7 of the first group is connected with a labyrinthgas distribution device 10 on the inner side of a magnetron sputtering rotating cathode target-to-working gas labyrinthgas distribution device 15, a connectingpipe 7 of the second group is connected with a labyrinthgas distribution device 10 on the inner side of a magnetron sputtering rotating cathode target-to-reaction gas labyrinthgas distribution device 16, and the two groups of gasflow control instruments 1 are utilized to respectively control the argon and the oxygen, so that the control precision is improved; the connector 5 is connected with thegas flowmeter 3 and the gas on-offsolenoid valve 4 through threads, the connectingpipe 7 is connected with the gas on-offsolenoid valve 4 and the goldenrain target gasdistribution shunt tee 8 through threads, and the sealing effect is guaranteed through threaded connection; the connectingscrew hole 21 is formed in the magnetron sputtering plasma physical surfacebasic baffle 17, the magnetron sputtering plasma physical surfacebasic baffle 17 is connected with thesealing box 12 through a screw, the magnetron sputtering plasma physical surfaceadjustable baffle 18 is connected with the magnetron sputtering plasma physical surfacebasic baffle 17 in a sliding mode, the magnetron sputtering plasma physical surfacebasic baffle 17 and the magnetron sputtering plasma physical surfaceadjustable baffle 18 play a role in blocking, and the magnetron sputtering plasma physical surfaceadjustable baffle 18 can change positions according to requirements so as to adapt to different reaction environments; the gas input pipe 9 is connected with a goldenrain counter gas distributionshunt tee joint 8 and a labyrinthgas distribution device 10 through threads, gas diffusionsmall holes 11 of the labyrinth gas distribution device are integrally formed in the labyrinthgas distribution device 10, and the labyrinthgas distribution device 10 plays a gas distribution role, so that argon and oxygen can be fully distributed.

The working principle is as follows: in the vacuum state, working gas argon is diffused actively in the area around the magnetron sputtering rotary cathode Koelreuteriatarget 19, under the combined action of electric field force and magnetic field force, argon atoms are ionized to form stable sputtering plasma, the magnetron sputtering rotary cathode Kouyteria target reaction gas labyrinthgas distribution device 16 and the magnetron sputtering rotary cathode Kouyteria target working gas labyrinthgas distribution device 15 are separated and then are arranged near the magnetron sputtering rotary cathode Kouyteriatarget 19, the argon ionization rate of the working gas of the gas distribution method is high, high-energy argon ions bombarding the magnetron sputtering rotary cathode Kouyteriatarget 19 are increased, the characteristic that the separated gas distribution method reaction magnetron sputtering coating film is deposited at high speed in the state close to metal sputtering is realized, the reaction magnetron sputtering separated gas distribution method is characterized in that the magnetron sputtering rotary cathode Kouyteria target working gas labyrinthgas distribution device 15 is arranged near thesputtered glass substrate 14, more target atoms sputtered from the magnetron sputtering rotary cathode Koelreuteria paniculata facingtarget 19 in the plasma react with reaction gas oxygen to generate compounds which are deposited on the surface of the sputteredglass substrate 14, and because the labyrinthgas distribution device 15 of the magnetron sputtering rotary cathode facing target working gas is arranged close to the sputteredglass substrate 14 by the gas distribution method, the deposition of the compounds generated on the magnetron sputtering rotary cathode Koreuteria paniculata facingtarget 19 is extremely small, the poisoning phenomenon of the magnetron sputtering rotary cathode Koreuteria paniculata facingtarget 19 is well reduced, and the quality of the reactive magnetron sputtering coating process is more stable.

The foregoing illustrates and describes the principles, general features, and advantages of the present invention. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, which are described in the specification and illustrated only to illustrate the principle of the present invention, but that various changes and modifications may be made therein without departing from the spirit and scope of the present invention, which fall within the scope of the invention as claimed.

Claims (5)

1. A reaction magnetron sputtering separation type gas distribution method is characterized in that: the device comprises a gas flow controller (1), a seal box (12), a magnetron sputtering plasma physical surface basic baffle plate (17) and a sputtered glass substrate (14), wherein the lower end of the gas flow controller (1) is connected with the seal box (12), a gas flow display window (2) is arranged at the front end of the gas flow controller (1), a gas inlet pipe (6) is arranged at one side of the gas flow controller (1), the gas outlet end of the gas inlet pipe (6) is connected with a gas flowmeter (3), the gas flowmeter (3) is connected with a gas on-off electromagnetic valve (4) through a connector (5), the gas on-off electromagnetic valve (4) is connected with a Koelreuterian target gas distribution tee joint (8) through a connecting pipe (7), two ends of the Koreuterian target gas distribution tee joint (8) are both connected with gas input pipes (9), and the gas outlet end of the gas input pipe (9) is, be provided with maze gas distribution device gas diffusion aperture (11) on maze gas distribution device (10), seal box (12) front end is provided with sealed lid (13), seal box (12) inside is provided with sputtered glass substrate (14), sputtered glass substrate (14) downside is provided with two magnetron sputtering rotary cathode to target working gas maze gas distribution device (15), magnetron sputtering rotary cathode is provided with magnetron sputtering plasma physical surface basic baffle (17) to target working gas maze gas distribution device (15) downside, be provided with magnetron sputtering plasma physical surface adjustable baffle (18) between magnetron sputtering plasma physical surface basic baffle (17), preceding side and both sides shaping have connecting wire hole (21) on magnetron sputtering plasma physical surface basic baffle (17), magnetron sputtering plasma physical surface basic baffle (17) downside is provided with two magnetron sputtering rotary cathode to target reaction gas The gas distribution device comprises a body labyrinth gas distribution device (16), the inner parts of the magnetron sputtering rotating cathode target-facing working gas labyrinth gas distribution device (15) and the magnetron sputtering rotating cathode target-facing reaction gas labyrinth gas distribution device (16) are respectively connected with a labyrinth gas distribution device (10), two magnetron sputtering rotating cathode goldenrain generating targets (19) are arranged on the lower side of the magnetron sputtering rotating cathode target-facing reaction gas labyrinth gas distribution device (16), and magnetron sputtering rotating cathode goldenrain generating target-facing magnetron magnetic field sources (20) are arranged on the inner side of the magnetron sputtering rotating cathode goldenrain generating targets (19).

2. The reactive magnetron sputtering separation type gas distribution method according to claim 1, characterized in that: gas flow control appearance (1) is provided with two sets ofly, connects outside argon gas and oxygen respectively, and first group connecting pipe (7) are connected magnetron sputtering rotating cathode is inboard to target working gas maze gas distribution device (15) maze gas distribution device (10), the second group connecting pipe (7) are connected magnetron sputtering rotating cathode is inboard to target reaction gas maze gas distribution device (16) maze gas distribution device (10).

3. The reactive magnetron sputtering separation type gas distribution method according to claim 1, characterized in that: the connector (5) is in threaded connection with the gas flowmeter (3) and the gas on-off solenoid valve (4), and the connecting pipe (7) is in threaded connection with the gas on-off solenoid valve (4) and the Koelreuteria target gas distribution shunt tee joint (8).

4. The reactive magnetron sputtering separation type gas distribution method according to claim 1, characterized in that: the connecting wire hole (21) is formed in the magnetron sputtering plasma physical surface basic baffle (17), the magnetron sputtering plasma physical surface basic baffle (17) is connected with the sealing box (12) through a screw, and the magnetron sputtering plasma physical surface adjustable baffle (18) is connected with the magnetron sputtering plasma physical surface basic baffle (17) in a sliding mode.

5. The reactive magnetron sputtering separation type gas distribution method according to claim 1, characterized in that: the gas input pipe (9) is connected with the goldenrain target gas distribution shunt tee joint (8) and the labyrinth gas distribution device (10) through threads, and gas diffusion small holes (11) of the labyrinth gas distribution device are integrally formed in the labyrinth gas distribution device (10).

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