CN112130387A - Array substrate and repairing method thereof - Google Patents
Array substrate and repairing method thereofDownload PDFInfo
- Publication number
- CN112130387A CN112130387ACN202011000534.6ACN202011000534ACN112130387ACN 112130387 ACN112130387 ACN 112130387ACN 202011000534 ACN202011000534 ACN 202011000534ACN 112130387 ACN112130387 ACN 112130387A
- Authority
- CN
- China
- Prior art keywords
- line
- repair
- repairing
- joint
- pixel unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758substrateSubstances0.000titleclaimsabstractdescription39
- 238000000034methodMethods0.000titleclaimsabstractdescription29
- 230000008439repair processEffects0.000claimsabstractdescription150
- 238000003860storageMethods0.000claimsabstractdescription45
- 238000005234chemical depositionMethods0.000claimsdescription10
- 238000003466weldingMethods0.000claimsdescription7
- 238000005520cutting processMethods0.000claimsdescription4
- 230000007547defectEffects0.000abstractdescription6
- 229910052751metalInorganic materials0.000description34
- 239000002184metalSubstances0.000description34
- 239000004065semiconductorSubstances0.000description9
- 238000004519manufacturing processMethods0.000description6
- 239000003990capacitorSubstances0.000description5
- 238000010586diagramMethods0.000description5
- 238000007689inspectionMethods0.000description4
- 230000002159abnormal effectEffects0.000description3
- 238000001514detection methodMethods0.000description3
- 239000004973liquid crystal related substanceSubstances0.000description3
- 239000000463materialSubstances0.000description3
- 230000002093peripheral effectEffects0.000description3
- 230000008569processEffects0.000description3
- 238000000745sonoluminescence detectionMethods0.000description3
- WFKWXMTUELFFGS-UHFFFAOYSA-NtungstenChemical compound[W]WFKWXMTUELFFGS-UHFFFAOYSA-N0.000description3
- 229910052721tungstenInorganic materials0.000description3
- 239000010937tungstenSubstances0.000description3
- 229910021417amorphous siliconInorganic materials0.000description2
- 230000008878couplingEffects0.000description2
- 238000010168coupling processMethods0.000description2
- 238000005859coupling reactionMethods0.000description2
- 101100008044Caenorhabditis elegans cut-1 geneProteins0.000description1
- 101100008046Caenorhabditis elegans cut-2 geneProteins0.000description1
- OKTJSMMVPCPJKN-UHFFFAOYSA-NCarbonChemical compound[C]OKTJSMMVPCPJKN-UHFFFAOYSA-N0.000description1
- 230000009471actionEffects0.000description1
- 230000032683agingEffects0.000description1
- 229910052799carbonInorganic materials0.000description1
- 238000006243chemical reactionMethods0.000description1
- 230000009194climbingEffects0.000description1
- 230000018109developmental processEffects0.000description1
- 230000000694effectsEffects0.000description1
- 238000002474experimental methodMethods0.000description1
- 230000003301hydrolyzing effectEffects0.000description1
- 230000008018meltingEffects0.000description1
- 238000002844meltingMethods0.000description1
- 150000002739metalsChemical class0.000description1
- 238000012986modificationMethods0.000description1
- 230000004048modificationEffects0.000description1
- 238000006303photolysis reactionMethods0.000description1
- 230000015843photosynthesis, light reactionEffects0.000description1
- 229910021420polycrystalline siliconInorganic materials0.000description1
Images
Classifications
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136259—Repairing; Defects
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Power Engineering (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
Technical Field
The invention belongs to the technical field of liquid crystal display panels, and particularly relates to an array substrate and a repairing method thereof.
Background
The array substrate comprises criss-cross data lines and scanning lines, the data lines are very thin relative to the scanning lines, missing broken lines or climbing broken lines are easy to occur, and the probability of broken lines of the data lines is high due to the large number of the data lines (RGB pixel units are more than 3 times of resolution).
As shown in fig. 1, when a large-sized display panel is repaired by using a repair line, when acertain data line 10 has a broken line O, afirst end 30 of thedata line 10 is cut off, and then a second end of the data line is connected to awiring 21 on a chip (IC)20 side by melting, so that a data line signal needs to come out from thewiring 21 on the chip (IC)20 side, pass through aperipheral repair line 30, and enter the first end of thedata line 10. Since theperipheral repair line 30 is relatively long, the load of theperipheral repair line 30 is too large, resulting in a weak line of the repaired panel.
Generally, after the data line is manufactured, an appearance inspection is performed to find out an abnormal pattern by comparing the appearance of the abnormal pattern with that of a normal pattern, and then the abnormal pattern is repaired. If the broken line repair is performed after the data line manufacturing process (specifically, the LVCD mode is deposited by laser chemistry: metal source six carbon based tungsten W (CO))6The metal tungsten film is separated to be formed at the broken line position by the hydrolytic reaction under the action of the laser beam, so that the signal of the data line is conducted), and the repairing line repairing is not needed to be reserved to the A inspection or the SL inspection according to the figure 1, so that the bad repairing weak line is avoided, and the yield of the panel is greatly improved.
In an actual manufacturing process, the data line defect is repaired by appearance inspection after the manufacturing process of the data line, and the effect is as shown in fig. 2(a) of the pixel structure, and fig. 2(b) is a common repairing method for the broken data line after the manufacturing process of the data line.
As shown in fig. 2(a), the display substrate includes an underlying substrate (not shown); agate line 11 and astorage capacitance line 12 formed of a first metal layer on an underlying substrate; a gate insulating layer (not shown) covering the first metal layer; asemiconductor layer 21 on the gate insulating layer; adata line 31 formed of a second metal layer, asource electrode 32 and adrain electrode 33 on thesemiconductor layer 21 and electrically connected to thesemiconductor layer 21, and adata line layer 34 on the storage capacitor line; an inorganic insulating film (not shown) covering the second metal layer, afirst via hole 41 on the inorganic insulating film and on thedrain electrode 33, and asecond via hole 42 on thedata line layer 34; and apixel electrode 51 formed of an ITO material on the inorganic insulating film; the first via 41 electrically connects thedrain 33 to thepixel electrode 51, and the second via 42 electrically connects thedata line layer 34 to thepixel electrode 51.
As shown in fig. 2(b), a data line is broken after the second metal layer is processed, S1, arepair line 71 electrically connected to the data line is formed above and below the broken data line S1 by using a laser chemical deposition LVCD, and the material of therepair line 71 is the same as that of the second metal layer. Because the first metal layer is already formed during the second metal layer manufacturing process, and the laser chemical deposition LVCD uses laser photolysis, if the second metal layer is directly sputtered to form a film through the first metal layer (such as a storage capacitor line or a scan line), it is difficult to control the laser energy so that the two layers of metals are not welded. If the energy is too small, a tungsten film cannot be formed; if the energy is too large, the overlapped parts of the two layers of metal are electrically connected to form S-Cs (data lines and storage capacitor lines) short circuit, so that the line is not good when the lamp is turned on; even if some repairing is successful, in a later aging experiment, the micro-welding at the overlapped part of two layers of metal is deteriorated, and the line or point defect caused by short circuit also occurs.
Disclosure of Invention
The invention aims to provide an array substrate and a repairing method thereof, wherein the opening rate of pixels is not reduced, and weak line defects are avoided during repairing.
The invention provides an array substrate, which comprises a gate line and a data line which are crisscrossed and spaced by an insulating layer, a pixel unit defined by the intersection of the gate line and the data line, a TFT switch positioned at the intersection of the gate line and the data line, a pixel electrode positioned in the pixel unit, a storage capacitance line formed simultaneously with the gate line and a repair device used for repairing the data line when the data line is disconnected; the repair device comprises 2 repair joints which are positioned in each pixel unit and are parallel to the gate lines and a plurality of storage repair lines which are longitudinally spanned on the storage capacitance lines; the 2 repair joints are respectively a first repair joint and a second repair joint, the first repair joint is connected with one end of the data line, and the second repair joint is connected with the other end of the data line; two adjacent repair joints of two adjacent rows of pixel units are respectively the repair joint of the pixel unit in the row and the repair joint of the pixel unit in the next row; the width of the storage repair line longitudinally spanning the storage capacitance line is larger than that of the storage capacitance line.
Further, the repair device further comprises a gate repair line longitudinally straddling the gate line.
Further, the width of the gate repair line longitudinally spanning the gate line is larger than that of the gate line.
Furthermore, the repair device further comprises a repair pixel electrode line, and the repair pixel electrode line covers the second repair connector of the pixel unit of the current row and the first repair connector of the pixel unit of the next row; the repair pixel electrode wire and the pixel electrode are spaced at a certain distance.
The invention also provides a method for repairing the array substrate, which comprises the following steps:
step S1, the data line has broken line, the position of the broken line is in the area of the non-gate line;
step S2: judging that the first repairing joint and the second repairing joint at the two ends of the data line are closer to the broken line;
step S3: and selecting a storage repairing wire for repairing, connecting the first repairing joint and the storage repairing wire and connecting the second repairing joint and the storage repairing wire by adopting laser chemical deposition, and respectively forming a first connecting wire and a second connecting wire.
Further, the first connecting line is connected with the first repairing joint and the storage repairing line, and the second connecting line is connected with the second repairing joint and the storage repairing line.
The invention also provides a method for repairing the array substrate, which is characterized by comprising the following steps:
s1: the data line has a broken line, and the broken line is in the area of the gate line;
s2: judging that the second repair joints of the pixel units in the row and the first repair joints of the pixel units in the next row are closer to the broken line;
s3: and selecting the grid repairing line for repairing, connecting the second repairing joint and the grid repairing line of the pixel unit of the row and the first repairing joint and the grid repairing line of the pixel unit of the next row by adopting laser chemical deposition, and respectively forming a first connecting line and a second connecting line.
Further, the first connecting line is connected with the first repairing joint and the grid repairing line, and the second connecting line is connected with the second repairing joint and the grid repairing line.
The invention also provides a method for repairing the array substrate, which comprises the following steps:
s1: the crossing part of the data line and the gate line is broken, and a first data line cutting part between the gate line and the second repairing joint of the pixel unit in the current row and a second data line cutting part between the gate line and the first repairing joint of the pixel unit in the next row are cut off;
s2: and selecting a repair pixel electrode line for repair, welding a first overlapping position between the repair pixel electrode line and the second repair connector of the pixel unit of the current row, and welding a second overlapping position between the repair pixel electrode line and the first repair connector of the pixel unit of the next row.
The invention also provides a method for repairing the array substrate, wherein the data line of the pixel unit in the row is connected to the data line of the pixel unit in the next row through the second repairing joint, the first overlapping part, the repairing pixel electrode line and the second overlapping part of the pixel unit in the row, and the first repairing joint of the pixel unit in the next row
According to the array substrate and the repairing method thereof, the repairing joints and the repairing lines are mainly distributed between the adjacent rows of pixel units, so that the aperture opening ratio of pixels cannot be reduced; the gate repair line is disconnected with the data line before repair, so that coupling capacitance between the gate line and the data line cannot be formed, namely, the capacitance and resistance load of the gate line and the data line cannot be increased, and meanwhile, the toppling direction of liquid crystal molecules near the repair joint cannot be influenced by disconnection, namely, light leakage cannot occur in a dark state; after the broken line after the A detection and the SL detection is repaired, a data line layer metal cushion layer is arranged below the pixel electrode line electrically connected with the data line, so Cgs is reduced; the broken line can be repaired through the repair graph in the pixel, and the defect of weak line caused by repair line repair is avoided.
Drawings
Fig. 1 is a schematic diagram illustrating a broken line repairing of a conventional array substrate;
fig. 2(a) is a schematic view of a pixel structure of a conventional array substrate;
fig. 2(b) is a schematic diagram of a conventional repairing method for a pixel structure of an array substrate;
FIG. 3 is a schematic view of a pixel structure of an array substrate according to the present invention;
FIG. 3(a) is a schematic diagram illustrating the repair of the broken wire after the second metal layer process shown in FIG. 3;
FIG. 3(b) is a schematic diagram illustrating the repair of a broken wire after the second metal layer process shown in FIG. 3;
FIG. 3(c) is a schematic diagram of repairing the broken line after the second metal layer process shown in FIG. 3.
Detailed Description
The present invention is further illustrated by the following figures and specific examples, which are to be understood as illustrative only and not as limiting the scope of the invention, which is to be given the full breadth of the appended claims and any and all equivalent modifications thereof which may occur to those skilled in the art upon reading the present specification.
For the sake of simplicity, the drawings only schematically show the parts relevant to the present invention, and they do not represent the actual structure as a product. In addition, in order to make the drawings concise and understandable, components having the same structure or function in some of the drawings are only schematically illustrated or only labeled. In this document, "one" means not only "only one" but also a case of "more than one".
The array substrate comprises a TFT switch, wherein the TFT switch comprises a grid electrode, a semiconductor layer arranged opposite to the grid electrode, and a source electrode and a drain electrode which are electrically connected with the semiconductor layer, and the semiconductor layer is amorphous Silicon (a-Si) or oxide (IGZO) or Low Temperature Polycrystalline Silicon (LTPS). The array substrate of the invention is In a Vertical Alignment (VA) mode, or In a horizontal Alignment (IPS) mode, or a Twisted Nematic (TN) mode.
As shown in fig. 3, the array substrate of the present embodiment includes a bottom substrate (not shown); agate line 11 and astorage capacitance line 12 formed of a first metal layer on an underlying substrate; a gate insulating layer (not shown) covering the first metal layer; asemiconductor layer 21 on the gate insulating layer; adata line 31 formed of a second metal layer and crisscrossed with thegate line 11, asource electrode 32 and adrain electrode 33 on thesemiconductor layer 21 and electrically connected to the semiconductor layer, and adata line layer 34 on thestorage capacitor line 12; an inorganic insulating film (not shown) covering the second metal layer, afirst via hole 41 formed on the inorganic insulating film and located on thedrain electrode 33, and asecond via hole 42 located on thedata line layer 34; and apixel electrode 51 formed of an ITO material on the inorganic insulating film; the first via 41 electrically connects thedrain 33 to thepixel electrode 51, and the second via 42 electrically connects thedata line layer 34 to thepixel electrode 51. Wherein thegate lines 11 and thedata lines 31 are criss-crossed to form a pixel unit, the TFT switches are located at intersections of thegate lines 11 and thedata lines 31, and thepixel electrodes 51 are located in the pixel unit.
According to fig. 3, a gate insulating layer is interposed between thegate line 11 and thedata line 31.
In this embodiment, the repair pattern is provided by the area without any second metal layer pattern in the first metal layer pattern.
The array substrate further comprises repair devices distributed between adjacent rows of pixel units, wherein each repair device comprises 2 repair joints which are positioned in each pixel unit and are parallel to thegate line 11, repair pixel electrode lines E which are arranged between two adjacent rows of pixel units and are overlapped with two adjacent repair joints, a plurality of storage repair lines C which longitudinally span thestorage capacitor lines 12, and gate repair lines D which longitudinally span thegate line 11. Wherein, 2 repair joints, a storage repair line C and a grid electrode repair line D are all made of a second metal layer and are formed synchronously with the data line 31 (namely formed by exposure and development of a data line mask); the repair pixel electrode line E is formed with a mask for forming thepixel electrode 51, i.e., formed simultaneously with thepixel electrode 51.
The 2 repair joints are respectively a first repair joint A and a second repair joint B, the first repair joint A is connected with one end of thedata line 31, and the second repair joint B is connected with the other end of thedata line 31; two adjacent repair joints of two adjacent rows of pixel units are respectively a second repair joint B and a first repair joint A ', the second repair joint B is the repair joint of the pixel unit of the row, and the second repair joint A' is the repair joint of the pixel unit of the next row. The repairing pixel electrode line E covers or overlaps the second repairing joint B of the pixel unit of the row and the first repairing joint A' of the pixel unit of the next row; the repair pixel electrode line E is spaced apart from thepixel electrode 51 by a certain distance.
The width of the storage repair line C longitudinally striding on thestorage capacitance line 12 is larger than that of thestorage capacitance line 12, and the width of the gate repair line D longitudinally striding on thegate line 11 is larger than that of thegate line 11.
The invention also provides a method for repairing the array substrate, which is used for modifying the broken line after the second metal layer is manufactured and comprises the following steps:
step S1, as shown in fig. 3(a), thedata line 31 has a broken line O, and the position of the broken line O is in the area where the non-gate line is located;
step S2: judging that the first repairing joint A and the second repairing joint B at the two ends of thedata line 31 are closer to the broken line O;
step S3: selecting a storage repair line C for repairing, namely connecting the first repair joint A and the storage repair line C and connecting the second repair joint B and the storage repair line C by adopting laser chemical deposition LVCD, and respectively forming a first connectingline 72 and a second connectingline 73, namely repairing a graph which does not pass through the first metal layer by the laser chemical deposition LVCD; the first connectingline 72 connects the first repair joint a and the storage repair line C, and the second connectingline 73 connects the second repair joint B and the storage repair line C;
the broken line O of thedata line 31 can be conducted by the above method, and thedata line 31 of the pixel unit of the current row is conducted from the first repairing joint a, the storage repairing line C, the first connectingline 72, the second connectingline 73 to the second repairing joint B.
The invention also provides a method for repairing the array substrate, which is used for modifying the broken line after the second metal layer is manufactured and comprises the following steps:
s1: as shown in fig. 3(b), thedata line 31 has a broken line O, and the broken line O is in the area of thegate line 11;
s2: judging that the second repair joint B of the pixel unit in the row and the first repair joint A' of the pixel unit in the next row are closer to the broken line O;
s3: and selecting a grid repairing line D for repairing, namely connecting a second repairing joint B and the grid repairing line D of the pixel unit of the row and a first repairing joint A 'and the grid repairing line D of the pixel unit of the next row by adopting laser chemical deposition LVCD (low voltage chemical deposition), and respectively forming a first connectingline 74 and a second connectingline 75, wherein the first connectingline 74 is connected with the second repairing joint B and the grid repairing line D of the pixel unit of the row, and the second connectingline 75 is connected with the first repairing joint A' and the grid repairing line D of the pixel unit of the next row.
The broken line O of thedata line 31 can be conducted by the above method, and thedata line 31 of the pixel unit in the current row is connected to thedata line 31 of the pixel unit in the next row through the second repair connector B, thefirst connection line 74, the gate repair line D and thesecond connection line 75.
The invention also provides a method for repairing the array substrate, which is used for modifying the broken line after the second metal layer is manufactured and comprises the following steps:
s1: as shown in fig. 3(c), there is a broken line O at the crossing of thedata line 31 and thegate line 11, a first data line cut 1 between thegate line 11 and the second repair tab B of the pixel unit in the current row and a second data line cut 2 between thegate line 11 and the first repair tab a' of the pixel unit in the next row;
s2: and selecting a repair pixel electrode line E for repair, welding a first overlappingpart 3 between the repair pixel electrode line E and the second repair joint B of the pixel unit of the current row, and welding a second overlappingpart 4 between the repair pixel electrode line E and the first repair joint A' of the pixel unit of the next row.
The broken line O of thedata line 31 can be conducted by the above method, and thedata line 31 of the pixel unit in the current row is connected to thedata line 31 of the pixel unit in the next row through the second repair connector B, the first overlappingpart 3, the repair pixel electrode line E, the second overlappingpart 4, and the first repair connector a' of the pixel unit in the next row.
The invention can not only repair the broken wire after the second metal layer manufacturing process, but also repair the broken wire during A detection and SL detection.
When the data line is broken, the data line can be repaired without laser film forming on the first metal layer, and short circuit failure caused by laser film forming on the first metal layer graph can be avoided.
According to the array substrate and the repairing method thereof, the repairing joints and the repairing lines are mainly distributed between the adjacent rows of pixel units, so that the aperture opening ratio of pixels cannot be reduced; the gate repair line is disconnected with the data line before repair, so that coupling capacitance between the gate line and the data line cannot be formed, namely, the capacitance and resistance load of the gate line and the data line cannot be increased, and meanwhile, the toppling direction of liquid crystal molecules near the repair joint cannot be influenced by disconnection, namely, light leakage cannot occur in a dark state; after the broken line after the A detection and the SL detection is repaired, a data line layer metal cushion layer is arranged below the pixel electrode line electrically connected with the data line, so Cgs is reduced; the broken line can be repaired through the repair graph in the pixel, and the defect of weak line caused by repair line repair is avoided.
Although the preferred embodiments of the present invention have been described in detail, the present invention is not limited to the details of the foregoing embodiments, and various equivalent changes (such as number, shape, position, etc.) may be made to the technical solution of the present invention within the technical spirit of the present invention, and these equivalent changes are all within the protection scope of the present invention.
Claims (10)
1. An array substrate including gate and data lines criss-crossing and spaced by an insulating layer, a pixel unit defined by intersections of the gate and data lines, a TFT switch located at the intersections of the gate and data lines, a pixel electrode located in the pixel unit, a storage capacitance line formed simultaneously with the gate line, and a repair device for repairing the data line when there is a disconnection of the data line; the method is characterized in that:
the repair device comprises 2 repair joints which are positioned in each pixel unit and are parallel to the gate lines and a plurality of storage repair lines which are longitudinally spanned on the storage capacitance lines; the 2 repair joints are respectively a first repair joint and a second repair joint, the first repair joint is connected with one end of the data line, and the second repair joint is connected with the other end of the data line; two adjacent repair joints of two adjacent rows of pixel units are respectively the repair joint of the pixel unit in the row and the repair joint of the pixel unit in the next row; the width of the storage repair line longitudinally spanning the storage capacitance line is larger than that of the storage capacitance line.
2. The array substrate of claim 1, wherein: the repair device further comprises a gate repair line straddling the gate line.
3. The array substrate of claim 2, wherein: the width of the gate repair line longitudinally spanning the gate line is larger than that of the gate line.
4. The array substrate of claim 1, wherein: the repair device also comprises a repair pixel electrode wire which covers the second repair joint of the pixel unit of the current row and the first repair joint of the pixel unit of the next row; the repair pixel electrode wire and the pixel electrode are spaced at a certain distance.
5. The repairing method for the array substrate of any one of claims 1 to 4, comprising the steps of:
step S1, the data line has broken line, the position of the broken line is in the area of the non-gate line;
step S2: judging that the first repairing joint and the second repairing joint at the two ends of the data line are closer to the broken line;
step S3: and selecting a storage repairing wire for repairing, connecting the first repairing joint and the storage repairing wire and connecting the second repairing joint and the storage repairing wire by adopting laser chemical deposition, and respectively forming a first connecting wire and a second connecting wire.
6. The method for repairing an array substrate of claim 5, wherein: the first connecting wire is connected with the first repairing joint and the storage repairing wire, and the second connecting wire is connected with the second repairing joint and the storage repairing wire.
7. The method for repairing an array substrate according to any one of claims 2 to 4, comprising the steps of:
s1: the data line has a broken line, and the broken line is in the area of the gate line;
s2: judging that the second repair joints of the pixel units in the row and the first repair joints of the pixel units in the next row are closer to the broken line;
s3: and selecting the grid repairing line for repairing, connecting the second repairing joint and the grid repairing line of the pixel unit of the row and the first repairing joint and the grid repairing line of the pixel unit of the next row by adopting laser chemical deposition, and respectively forming a first connecting line and a second connecting line.
8. The method for repairing an array substrate of claim 7, wherein: the first connecting wire is connected with the first repairing joint and the grid repairing wire, and the second connecting wire is connected with the second repairing joint and the grid repairing wire.
9. The method for repairing the array substrate of claim 4, comprising the steps of:
s1: the crossing part of the data line and the gate line is broken, and a first data line cutting part between the gate line and the second repairing joint of the pixel unit in the current row and a second data line cutting part between the gate line and the first repairing joint of the pixel unit in the next row are cut off;
s2: and selecting a repair pixel electrode line for repair, welding a first overlapping position between the repair pixel electrode line and the second repair connector of the pixel unit of the current row, and welding a second overlapping position between the repair pixel electrode line and the first repair connector of the pixel unit of the next row.
10. The method for repairing an array substrate of claim 9, wherein: the data line of the pixel unit of the line is connected to the data line of the pixel unit of the next line through the second repairing joint, the first overlapping position, the repairing pixel electrode line, the second overlapping position and the first repairing joint of the pixel unit of the next line.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011000534.6ACN112130387A (en) | 2020-09-22 | 2020-09-22 | Array substrate and repairing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011000534.6ACN112130387A (en) | 2020-09-22 | 2020-09-22 | Array substrate and repairing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112130387Atrue CN112130387A (en) | 2020-12-25 |
Family
ID=73842169
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011000534.6APendingCN112130387A (en) | 2020-09-22 | 2020-09-22 | Array substrate and repairing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112130387A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI282625B (en)* | 2002-08-01 | 2007-06-11 | Au Optronics Corp | Method of forming a thin film transistor liquid crystal display |
| CN101000412A (en)* | 2006-01-09 | 2007-07-18 | 中华映管股份有限公司 | Laser repair structure and method of liquid crystal display |
| CN105467706A (en)* | 2016-01-15 | 2016-04-06 | 武汉华星光电技术有限公司 | Array substrate structure and array substrate broken line repairing method |
| CN105607306A (en)* | 2014-11-18 | 2016-05-25 | 三星显示有限公司 | Method of manufacturing display substrate, repair method of display substrate and display substrate repaired by the repair method |
- 2020
- 2020-09-22CNCN202011000534.6Apatent/CN112130387A/enactivePending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI282625B (en)* | 2002-08-01 | 2007-06-11 | Au Optronics Corp | Method of forming a thin film transistor liquid crystal display |
| CN101000412A (en)* | 2006-01-09 | 2007-07-18 | 中华映管股份有限公司 | Laser repair structure and method of liquid crystal display |
| CN105607306A (en)* | 2014-11-18 | 2016-05-25 | 三星显示有限公司 | Method of manufacturing display substrate, repair method of display substrate and display substrate repaired by the repair method |
| CN105467706A (en)* | 2016-01-15 | 2016-04-06 | 武汉华星光电技术有限公司 | Array substrate structure and array substrate broken line repairing method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6980264B2 (en) | Repair method for defects in data lines and flat panel display incorporating the same | |
| US5335102A (en) | Liquid crystal display element and method for treating defective pixels therein | |
| US8355091B2 (en) | Array substrate and method for repairing broken line of liquid crystal display | |
| TWI409558B (en) | Display panel and method of repairing signal lines thereof | |
| CN102023438B (en) | Liquid crystal display device, manufacturing method thereof and defect repairing method | |
| JPH0740101B2 (en) | Thin film transistor | |
| US20070081108A1 (en) | Array substrate and its manufacturing method | |
| CN102722058B (en) | Liquid crystal array substrate, manufacturing method and repair method of liquid crystal array substrate | |
| CN101521209A (en) | Active matrix substrate and display device | |
| KR20010049823A (en) | Display device and method of reparing defect of the same | |
| CN101114655A (en) | Film transistor array substrates and its producing method, repairing method | |
| US20120121061A1 (en) | Shift register | |
| CN108646476B (en) | Broken line repairing method of liquid crystal panel | |
| CN103257464B (en) | A kind of restorative procedure of line defect of LCD array substrate | |
| JPH09311646A (en) | Product having array circuit containing correction structure and manufacture thereof | |
| US7119872B2 (en) | Open gate line repair in an LCD | |
| JP2002091342A (en) | Matrix array substrate | |
| JP2008010815A (en) | Automatic repair structure of liquid crystal display device | |
| US7151579B2 (en) | Thin film transistor array substrate and repairing method of the same | |
| US6515301B2 (en) | Structure and fabrication method of flat panel display comprising address line with mending layer | |
| US7990486B2 (en) | Liquid crystal display panel with line defect repairing mechanism and repairing method thereof | |
| JPH0435050B2 (en) | ||
| US20100309401A1 (en) | Liquid crystal display device and method for manufacturing the same | |
| CN112130387A (en) | Array substrate and repairing method thereof | |
| JP4004050B2 (en) | Active substrate, display device and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | Application publication date:20201225 | |
| WD01 | Invention patent application deemed withdrawn after publication |