CN112002631A - Plate-type integrated coating method and equipment for passivating contact solar cells - Google Patents
Plate-type integrated coating method and equipment for passivating contact solar cellsDownload PDFInfo
- Publication number
- CN112002631A CN112002631ACN202010880854.9ACN202010880854ACN112002631ACN 112002631 ACN112002631 ACN 112002631ACN 202010880854 ACN202010880854 ACN 202010880854ACN 112002631 ACN112002631 ACN 112002631A
- Authority
- CN
- China
- Prior art keywords
- silicon
- amorphous silicon
- coating process
- plate
- coating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Photovoltaic Devices (AREA)
Abstract
Translated fromChinese
Description
Translated fromChinese技术领域technical field
本发明涉及太阳能电池制备技术领域，特别涉及一种钝化接触太阳能电池的板式一体式镀膜方法及设备，以用于太阳能电池尤其是TOPCon电池的氧化硅和掺杂非晶硅镀膜。The invention relates to the technical field of solar cell preparation, in particular to a plate-type integrated coating method and equipment for passivating contact solar cells, which are used for silicon oxide and doped amorphous silicon coatings of solar cells, especially TOPCon cells.
背景技术Background technique
近年来TOPCon电池技术量产应用非常迅速，其技术的核心是制取极薄的SiO2薄层和制备掺杂的多晶硅层，目前的行业现状是先制取SiO2再制取非晶硅膜层，然后通过离子注入方式实现非晶硅层掺杂，需要3台设备分3道工序依次进行，最后通过退火形成掺杂的多晶硅(Poly)层，从而导致工艺流程较为复杂，具有设备投入成本高、载具周转复杂且维护周期短等不足。In recent years, the mass production and application of TOPCon battery technology has been very rapid. The core of its technology is the preparation of extremely thin SiO2 thin layers and the preparation of doped polysilicon layers. The current industry status is to first prepare SiO2 and then prepare amorphous silicon layers. , and then realize the doping of the amorphous silicon layer by ion implantation, which requires 3 equipment to be carried out in 3 steps in sequence, and finally forms a doped polysilicon (Poly) layer by annealing, which leads to a complicated process flow and high equipment investment costs. , The vehicle turnover is complex and the maintenance cycle is short.
此外，现有工艺过程中，使用等离子沉积(PECVD)，SiH4和磷烷分开的进气方式进入到反应腔体内部，通过射频电源(RF)激发电离后，两种气体快速反应生成掺杂非晶硅。但是由于膜中含氢量高，进一步高温退火工艺时容易起泡。同时，另一种制备掺杂非晶硅方法，即采用物理气相沉积(PVD)，通过在等离子激发氩气生产的氩离子轰击已经掺杂好磷的硅靶，溅射下来的硅磷原子沉积到表面而形成。非晶硅中掺杂浓度取决于靶材掺杂浓度，其缺点是掺磷硅靶尤其是高浓度掺杂的硅靶难以制作，导致没有稳定可靠的硅靶材用于量产镀膜，从而导致硅靶材制作成本高、稳定性差而影响TOPCon电池的质量。In addition, in the existing process, using plasma deposition (PECVD), SiH4 and phosphine enter the interior of the reaction chamber by means of separate air intake, and after excitation and ionization by radio frequency power (RF), the two gases react rapidly to generate doping Amorphous silicon. However, due to the high hydrogen content in the film, it is easy to foam during the further high temperature annealing process. At the same time, another method for preparing doped amorphous silicon is to use physical vapor deposition (PVD), by bombarding a silicon target that has been doped with phosphorus by argon ions produced by plasma excitation of argon, and the sputtered silicon and phosphorus atoms are deposited. formed on the surface. The doping concentration in amorphous silicon depends on the doping concentration of the target material. The disadvantage is that it is difficult to manufacture phosphorus-doped silicon targets, especially high-concentration doped silicon targets. The high production cost and poor stability of silicon targets affect the quality of TOPCon cells.
发明内容SUMMARY OF THE INVENTION
为解决上述技术问题，本发明提供了一种钝化接触太阳能电池的板式一体式镀膜方法，包括如下步骤：In order to solve the above technical problems, the present invention provides a plate-type integrated coating method for passivating contact solar cells, comprising the following steps:
S1.将硅片平铺放置在载板上；S1. Lay the silicon wafer on the carrier board;
S2.将步骤S1中载板上平铺的硅片加热后进氧化硅镀膜工艺腔进行SiO2薄膜制备；S2. Heat the silicon wafers laid on the carrier in step S1 and then enter the silicon oxide coating process chamber to prepare the SiO2 film;
S3.将步骤S2中载板上平铺的经过SiO2镀膜的硅片进掺杂非晶硅镀膜工艺腔进行掺杂非晶硅层镀膜；S3. The SiO2 -coated silicon wafers laid on the carrier in step S2 are fed into a doped amorphous silicon coating process chamber for doped amorphous silicon layer coating;
其中，氧化硅镀膜工艺腔与掺杂非晶硅镀膜工艺腔为一体式连续真空设置，以实现硅片的板式一体式镀膜，从而避免中间破真空引起的表面污染。Among them, the silicon oxide coating process chamber and the doped amorphous silicon coating process chamber are set in an integrated continuous vacuum, so as to realize the plate-type integrated coating of the silicon wafer, so as to avoid the surface pollution caused by the vacuum breaking in the middle.
其中，在进行步骤S1之前，对硅片进行清洗预处理。Wherein, before step S1 is performed, the silicon wafer is cleaned and pretreated.
其中，步骤S2中，加热温度为100～500℃。Wherein, in step S2, the heating temperature is 100-500°C.
其中，步骤S2中，氧化硅镀膜工艺腔内SiO2薄膜的形成方法为等离子辅助氧化法，工艺气体为O2或N2O，也可以使用O2与硅烷的混合气体或N2O与硅烷的混合气体，工艺的压强为2～100Pa，沉积温度为200～500℃。Wherein, in step S2, the formation method of the SiO2 film in the silicon oxide coating process chamber is a plasma-assisted oxidation method, the process gas is O2 or N2 O, and a mixed gas of O2 and silane or a mixed gas of N2 O and silane can also be used The pressure of the process is 2～100Pa, and the deposition temperature is 200～500℃.
其中，步骤S3中，掺杂非晶硅层的形成方法为等离子溅射法，对于掺磷非晶硅，其采用固体硅或掺磷固体硅作为靶材，工艺气体为纯氩气和纯磷烷单独通入掺杂非晶硅镀膜工艺腔后进行混合或直接向掺杂非晶硅镀膜工艺腔内通入氩气和磷烷的混合气体；或者，对于掺硼非晶硅，其采用固体硅或掺硼固体硅作为靶材，工艺气体为纯氩气和纯硼烷单独通入掺杂非晶硅镀膜工艺腔后进行混合或直接向掺杂非晶硅镀膜工艺腔内通入氩气和硼烷的混合气体。Wherein, in step S3, the method for forming the doped amorphous silicon layer is plasma sputtering. For phosphorus-doped amorphous silicon, solid silicon or phosphorus-doped solid silicon is used as the target material, and the process gas is pure argon and pure phosphorus. The alkane alone is passed into the doped amorphous silicon coating process chamber and then mixed, or the mixed gas of argon and phosphine is directly passed into the doped amorphous silicon coating process chamber; or, for boron-doped amorphous silicon, it uses solid Silicon or boron-doped solid silicon is used as the target material, and the process gas is pure argon and pure borane, which are separately introduced into the doped amorphous silicon coating process chamber and mixed or directly into the doped amorphous silicon coating process chamber. and borane gas mixture.
进一步，为了加快镀膜速度，实现更高产能，步骤S3中，采用多个柱式纯硅靶材或柱式掺磷或硼硅靶材并列放置，载板依次通过并列放置的靶材完成连续掺杂非晶硅层镀膜；工艺气体分别在柱靶之间导入。Further, in order to speed up the coating speed and achieve higher productivity, in step S3, a plurality of columnar pure silicon targets or columnar phosphorus-doped or boron-silicon targets are placed in parallel, and the carrier plate is sequentially placed through the parallel targets to complete the continuous doping. The heteroamorphous silicon layer is coated; the process gas is introduced between the column targets respectively.
基于上述一种钝化接触太阳能电池的板式一体式镀膜方法，本发明还提供了一种钝化接触太阳能电池的板式一体式镀膜设备，包括一体化连续设置的氧化硅镀膜工艺腔及掺杂非晶硅镀膜工艺腔，硅片平铺在载板上并依次通过氧化硅镀膜工艺腔及掺杂非晶硅镀膜工艺腔完成镀膜。Based on the above-mentioned plate-type integrated coating method for passivating contact solar cells, the present invention also provides a plate-type integrated coating device for passivating contact solar cells, including an integrated and continuously arranged silicon oxide coating process chamber and a doping non-contact solar cell. In the crystalline silicon coating process chamber, the silicon wafers are laid flat on the carrier plate, and the coating is completed through the silicon oxide coating process chamber and the doped amorphous silicon coating process chamber in turn.
其中，在氧化硅镀膜工艺腔和掺杂非晶硅镀膜工艺腔之间还设置有真空的隔离腔。Wherein, a vacuum isolation chamber is further arranged between the silicon oxide coating process chamber and the doped amorphous silicon coating process chamber.
其中，在氧化硅镀膜工艺腔入口端还设置有加热腔；加热腔内采用多个红外灯管共同加热，或者使用加热板加热，或者采用红外加热和加热板同时加热。Wherein, a heating chamber is also provided at the inlet end of the silicon oxide coating process chamber; the heating chamber is heated by a plurality of infrared lamps, or heated by a heating plate, or heated by an infrared heating and a heating plate at the same time.
其中，掺杂非晶硅镀膜工艺腔分割为多个连续的腔室，多个连续的腔室内分别放置有柱式纯硅靶材或柱式掺杂硅靶材；多个连续的腔室之间通过真空的隔离腔间隔，隔离腔分别通过设置的分子泵控制真空度。Among them, the doped amorphous silicon coating process chamber is divided into a plurality of continuous chambers, and a column-type pure silicon target or a column-type doped silicon target material is respectively placed in the plurality of continuous chambers; The isolation chambers are separated by vacuum, and the isolation chambers are respectively controlled by the set molecular pump to control the vacuum degree.
其中，在掺杂非晶硅镀膜工艺腔的出口端还设置有卸载腔；掺杂非晶硅镀膜工艺腔与卸载腔之间还设置有真空的隔离腔，隔离腔用分子泵抽真空抽去残余气体，通过隔离腔将掺杂非晶硅镀膜工艺腔与卸载腔隔离以防止卸载腔的残余气体进入掺杂非晶硅镀膜工艺腔。Among them, an unloading cavity is also set at the outlet end of the doped amorphous silicon coating process cavity; a vacuum isolation cavity is also set between the doped amorphous silicon coating process cavity and the unloading cavity, and the isolation cavity is evacuated by a molecular pump. For the residual gas, the doped amorphous silicon coating process chamber is isolated from the unloading cavity through the isolation cavity to prevent the residual gas in the unloading cavity from entering the doped amorphous silicon coating process cavity.
通过上述技术方案，本发明具有如下有益效果：Through the above-mentioned technical scheme, the present invention has the following beneficial effects:
(1)本发明为生长SiO2和生长不同掺杂浓度非晶硅的板式一体式镀膜方案，通过一体式的板式镀膜工序，实现制造环节高度整合，减少生产工艺和生产设备之间的周转，从而有效提升太阳能电池尤其是TOPCon电池的生产良品率；(1) The present invention is a plate-type integrated coating scheme for growing SiO2 and growing amorphous silicon with different doping concentrations. Through the integrated plate-type coating process, a high degree of integration of the manufacturing process is realized, and the turnover between the production process and the production equipment is reduced, Thereby effectively improving the production yield of solar cells, especially TOPCon cells;
(2)生长SiO2采用射频电源激发的等离子氧化，从而有效避免了离子源、腔体内部、载板容易附着反应产物及伴有掉渣的问题，不需要经常维护，从而有效降低了维护成本；(2) Plasma oxidation excited by radio frequency power is used for the growth of SiO2 , which effectively avoids the problem that the ion source, the interior of the cavity, and the carrier plate are easily attached to the reaction product and accompanied by slag drop, and frequent maintenance is not required, thus effectively reducing the maintenance cost. ;
(3)镀掺杂非晶硅用的靶材使用旋转式纯硅柱靶材或掺磷(或硼)硅靶材，并配合使用Ar和磷烷(或硼烷)的混合气体，磷烷(或硼烷)由Ar携带进入腔体实现掺杂，因此避免了使用难以制作的高浓度掺磷或硼硅靶材(甚至可以直接使用旋转式纯硅柱靶材)，从而降低了太阳能电池尤其是TOPCon电池的生产成本；(3) The target for plating doped amorphous silicon uses a rotary pure silicon column target or a phosphorus (or boron)-doped silicon target, and uses a mixed gas of Ar and phosphine (or borane), phosphine (or borane) is carried into the cavity by Ar to achieve doping, thus avoiding the use of difficult-to-fabricate high-concentration phosphorus-doped or boron-silicon targets (or even directly using a rotary pure silicon pillar target), thereby reducing solar cell performance. Especially the production cost of TOPCon cells;
(4)掺杂非晶硅镀的靶材还可以由多个靶材组合而成，镀膜过程可以分成多个独立单元腔室，单元腔室之间根据需要可以增加分子泵抽空以避免反应气氛相互污染，从而满足了不同多晶硅膜层的制备需求。(4) The target material for doped amorphous silicon plating can also be composed of multiple targets. The coating process can be divided into multiple independent unit chambers. Molecular pump evacuation can be added between the unit chambers as needed to avoid the reaction atmosphere. Mutual pollution, so as to meet the preparation requirements of different polysilicon film layers.
附图说明Description of drawings
图1为实施例所公开的一种板式一体式镀膜设备结构示意图；1 is a schematic structural diagram of a plate-type integrated coating equipment disclosed in an embodiment;
图2为实施例所公开的另一种连续镀膜设备结构示意图。FIG. 2 is a schematic structural diagram of another continuous coating equipment disclosed in the embodiment.
具体实施方式Detailed ways
实施例1：Example 1:
参考图1，本发明提供的钝化接触太阳能电池的板式一体式镀膜设备，其包括一体化连续设置的PECVD工艺腔及PVD工艺腔；在PECVD工艺腔的入口端还设置有加热腔，加热腔的入口端对接至装载腔，装载腔的入口端对接至自动化上料机构；在PVD工艺腔的出口端还设置有卸载腔，卸载腔的出口端对截止自动化下料机构，在自动化下料机构与自动化上料机构之间设置有载板回传系统；PECVD工艺腔与PVD工艺腔之间还设置有真空的隔离腔并用分子泵抽真空抽去残余气体，通过隔离腔将氧化硅镀膜工艺与掺杂非晶硅镀膜工艺隔离以防止反应气氛交叉污染；PVD工艺腔与卸载腔之间还设置有真空的隔离腔并用分子泵抽真空抽去残余气体，通过隔离腔将掺杂非晶硅镀膜工艺与卸载腔隔离以防止卸载腔的残余气体进入PVD工艺腔；硅片平铺在载板上并依次通过各腔体完成镀膜。Referring to FIG. 1, the present invention provides a plate-type integrated coating equipment for passivation and contact with solar cells, which includes a PECVD process chamber and a PVD process chamber that are integrally and continuously arranged; a heating chamber is also provided at the inlet end of the PECVD process chamber. The inlet end of the PVD process chamber is connected to the loading chamber, and the inlet end of the loading chamber is connected to the automatic feeding mechanism; the outlet end of the PVD process chamber is also provided with an unloading chamber, and the outlet end of the unloading chamber is connected to the automatic blanking mechanism. A carrier plate return system is set between the automatic feeding mechanism; a vacuum isolation chamber is also set between the PECVD process chamber and the PVD process chamber, and the residual gas is evacuated by a molecular pump, and the silicon oxide coating process is separated from the isolation chamber. The doped amorphous silicon coating process is isolated to prevent cross-contamination of the reaction atmosphere; a vacuum isolation chamber is also set between the PVD process chamber and the unloading chamber, and the residual gas is evacuated by a molecular pump, and the doped amorphous silicon is coated through the isolation chamber. The process is isolated from the unloading cavity to prevent the residual gas in the unloading cavity from entering the PVD process cavity; the silicon wafer is flattened on the carrier plate and passes through each cavity in turn to complete the coating.
基于上述图1所示的板式一体式镀膜设备，本发明提供的一种钝化接触太阳能电池的板式一体式镀膜方法，包括如下步骤：Based on the plate-type integrated coating equipment shown in FIG. 1, the present invention provides a plate-type integrated coating method for passivating a contact solar cell, comprising the following steps:
S1.将经过清洗等预处理工序后的硅片平铺放置在载板上；S1. Lay the silicon wafer after cleaning and other pretreatment processes on the carrier board;
S2.将步骤S1中载板上平铺的硅片加热后进PECVD工艺腔进行SiO2薄膜制备；加热温度为100～500℃；SiO2薄膜的形成方法为等离子辅助的气相沉积法，工艺气体为O2、N2O、O2加硅烷的混合气体及N2O加硅烷的混合气体中的任一种或多种(图1中工艺气体以纯O2为例，不做具体限定)，工艺的压强为2～100Pa，沉积温度为200～500℃；S2. Heat the silicon wafers laid on the carrier in step S1 and then enter the PECVD process chamber to prepare the SiO2 film; the heating temperature is 100-500° C.; the SiO2 film is formed by a plasma-assisted vapor deposition method, and the process gas is Any one or more of the mixed gas of O2 , N2 O, O2 and silane, and the mixed gas of N2 O and silane (the process gas in FIG. 1 is pure O2 as an example, which is not specifically limited). The pressure is 2～100Pa, and the deposition temperature is 200～500℃;
S3.将步骤S2中载板上平铺的经过SiO2镀膜的硅片进PVD工艺腔进行磷掺杂非晶硅层镀膜；磷掺杂非晶硅层的形成方法为等离子溅射法，其采用多个柱式硅靶材或柱式掺磷硅靶材并列放置，载板依次通过并列放置的靶材，工艺气体为纯氩气和纯磷烷单独通入PVD工艺腔后进行混合或直接向PVD工艺腔内通入氩气和磷烷的混合气体，工艺的功率为10000～60000W，压力为0.1～10Pa，温度为100～700℃；S3. Put theSiO2 -coated silicon wafers on the carrier in step S2 into a PVD process chamber for phosphorus-doped amorphous silicon layer coating; the phosphorus-doped amorphous silicon layer is formed by a plasma sputtering method, which A plurality of columnar silicon targets or columnar phosphorus-doped silicon targets are placed in parallel, the carrier plate passes through the paralleled targets in turn, and the process gas is pure argon and pure phosphine, which are separately introduced into the PVD process chamber and then mixed or directly The mixed gas of argon and phosphine is introduced into the PVD process chamber, the power of the process is 10000-60000W, the pressure is 0.1-10Pa, and the temperature is 100-700℃;
其中，PECVD工艺腔与PVD工艺腔为一体式连续真空设置，以实现硅片的板式一体式镀膜，从而避免中间破真空引起的表面污染。Among them, the PECVD process chamber and the PVD process chamber are set in an integrated continuous vacuum, so as to realize the plate-type integrated coating of the silicon wafer, so as to avoid the surface pollution caused by the vacuum breaking in the middle.
实施例2：Example 2:
本实施例2与实施例1的不同之处在于，本实施例2通过将实施例1中的掺磷硅靶材替换为掺硼硅靶材，并将磷烷替换为硼烷，从而在硅片表面实现硼掺杂非晶硅层的镀膜加工。The difference between this embodiment 2 and
实施例3：Example 3:
基于上述实施例1并参考图2，其中，步骤S3中，PVD工艺腔包括多个间隔设置并连续的腔室，多个连续的腔室内的靶材均为旋转式纯硅柱靶材或具有相同或不同浓度的掺磷硅靶材，工艺气体分别在柱靶之间导入，且多个连续的腔室内的Ar和磷烷具有相同或不同的流量比，从而制作不同磷掺杂浓度的非晶硅薄膜；其中，基于多个连续的腔室内使用旋转式纯硅柱靶材或相同浓度的掺磷硅靶材且Ar和磷烷具有相同流量比时，通过连续溅射镀膜的方式获得相同掺杂浓度的多层膜层；或者，基于多个连续的腔室内使用旋转式纯硅柱靶材或相同浓度的掺磷硅靶材且Ar和磷烷具有不同流量比时，通过连续溅射镀膜的方式获得不同掺杂浓度的复合膜层尤其是梯度膜层；或者，基于多个连续的腔室内使用旋转式纯硅柱靶材或不同浓度的掺磷硅靶材且Ar和磷烷具有相同流量比时，通过连续溅射镀膜的方式获得不同掺杂浓度的复合膜层尤其是梯度膜层。其中，步骤S3中，PVD工艺腔的多个连续的腔室之间均通过真空的隔离腔进行隔离并分别通过设置的分子泵抽真空抽去残余气体并控制真空度，以防止反应气氛交叉污染而影响不同腔室内的不同镀膜效果。Based on the
实施例4：Example 4:
本实施例4与实施例3的不同之处在于，本实施例4通过将实施例3中的掺磷硅靶材替换为掺硼硅靶材，并将磷烷替换为硼烷，从而在硅片表面实现硼掺杂非晶硅层的镀膜加工。The difference between the present embodiment 4 and the embodiment 3 is that the present embodiment 4 replaces the phosphorus-doped silicon target in The surface of the wafer realizes the coating processing of the boron-doped amorphous silicon layer.
本发明的PECVD工艺为线性离子源使用RF激发等离子体放电，PVD工艺为不同浓度掺磷(或硼)硅靶材(或旋转式纯硅柱靶材)组合用于制备不同浓度的掺杂层或者梯度掺杂层；其中，PECVD工艺制备SiO2膜层的工艺原理：硅片经过装载腔进入到加热腔进行硅片和载板加热，然后进入SiO2工艺腔，离子源从上方通入工艺气体并在RF激发下生成活性氧原子，活性氧原子与硅片表面反应生产SiO2膜层，通过隔离腔隔离后续的工艺腔以防止反应气氛交叉污染，随后进入下一步的PVD工艺腔；PVD工艺制备多层相同或不同掺杂浓度非晶硅的工艺原理：载板进入到PVD工艺腔后，使用Ar和磷烷(或硼烷)的掺杂工艺气体轰击溅射靶材，制作不同掺杂浓度非晶硅薄膜，掺杂浓度取决于掺磷(或硼)硅靶材的磷(或硼)掺杂浓度(或旋转式纯硅柱靶材)和Ar与磷烷(硼烷)的流量比，这种多个不同掺杂腔室连续溅射镀膜的方式方便制作相同掺杂浓度的膜层或者不同掺杂浓度的多种复合膜层尤其是梯度膜层，工艺完成后从卸载腔卸载到其他载具出腔体，经过下道退火工序后形成磷(或硼)掺杂的非晶硅膜层。The PECVD process of the present invention is a linear ion source using RF to excite plasma discharge, and the PVD process is a combination of phosphorus (or boron) doped silicon targets (or rotary pure silicon pillar targets) with different concentrations to prepare doped layers with different concentrations Or gradient doping layer; among them, the process principle of PECVD process to prepare SiO2 film layer: silicon wafer enters the heating chamber through the loading chamber to heat the silicon wafer and the carrier plate, and then enters the SiO2 process chamber, and the ion source is fed into the process from above Gas and generate active oxygen atoms under RF excitation, the active oxygen atoms react with the surface of the silicon wafer to produce a SiO2 film layer, and the subsequent process chamber is isolated by an isolation chamber to prevent cross-contamination of the reaction atmosphere, and then enters the next PVD process chamber; PVD The process principle of preparing multiple layers of amorphous silicon with the same or different doping concentration: after the carrier enters the PVD process chamber, the doping process gas of Ar and phosphine (or borane) is used to bombard the sputtering target to make different doping Doping concentration of amorphous silicon thin film, the doping concentration depends on the phosphorus (or boron) doping concentration of the phosphorus-doped (or boron) silicon target (or the rotary pure silicon column target) and the difference between Ar and phosphine (borane). Flow ratio, this method of continuous sputtering coating of multiple different doping chambers is convenient to make films with the same doping concentration or multiple composite films with different doping concentrations, especially gradient films. After the process is completed, the unloading chamber is It is unloaded to other carriers and out of the cavity, and a phosphorus (or boron) doped amorphous silicon film is formed after the next annealing process.
因此，基于上述结构及工艺特征，本发明通过制造环节高度整合，减少生产工艺和生产设备之间的周转，从而有效提升太阳能电池尤其是TOPCon电池的生产良品率；PECVD生长SiO2采用RF激发的等离子氧化，线性离子源出纯O2等工艺气体的方式实现，从而有效避免了离子源、腔体内部、载板容易附着反应产物及伴有掉渣的问题，不需要经常维护，从而有效降低了维护成本，延长了维护周期；反应式PVD工艺的靶材使用旋转式纯硅柱靶材或掺磷(或)硅靶材，并配合PVD工艺气体使用Ar和磷烷(硼烷)的混合气体，磷烷(或硼烷)由Ar携带进入腔体实现掺杂，因此避免了使用难以制作的掺磷(或硼)硅靶材(或直接使用旋转式纯硅柱靶材)，从而降低了太阳能电池尤其是TOPCon电池的生产成本；反应式PVD工艺的靶材还可以由多个靶材组合而成，镀膜过程可以分成多个独立单元腔室，单元腔室之间根据需要可以增加隔离腔并用分子泵抽空或直接通过分子泵对单元腔室抽真空以避免反应气氛相互污染，从而满足了不同多晶硅膜层的制备需求。Therefore, based on the above-mentioned structure and process features, the present invention reduces the turnover between the production process and production equipment through the high integration of manufacturing links, thereby effectively improving the production yield of solar cells, especially TOPCon cells; PECVD growth of SiO2 adopts RF excitation. Plasma oxidation, the process gas such as pure O2 is realized by linear ion source, thus effectively avoiding the problem that the ion source, the inside of the cavity, and the carrier plate are easily attached to the reaction product and accompanied by the problem of slag drop, and frequent maintenance is not required, thereby effectively reducing the The maintenance cost is reduced and the maintenance period is extended; the target material of the reactive PVD process uses a rotary pure silicon column target or a phosphorus-doped (or) silicon target, and uses a mixture of Ar and phosphorus alkane (borane) with the PVD process gas Gas, phosphine (or borane) is carried into the cavity by Ar to realize doping, thus avoiding the use of difficult-to-fabricate phosphorus (or boron) doped silicon targets (or directly using a rotary pure silicon pillar target), thereby reducing the It reduces the production cost of solar cells, especially TOPCon cells; the target material of the reactive PVD process can also be composed of multiple targets, the coating process can be divided into multiple independent unit chambers, and the isolation between the unit chambers can be increased as needed. The cavity is also evacuated by a molecular pump or the unit chamber is evacuated directly by a molecular pump to avoid mutual contamination of the reaction atmosphere, thereby meeting the preparation requirements of different polysilicon film layers.
对所公开的实施例的上述说明，使本领域专业技术人员能够实现或使用本发明。对上述实施例的多种修改对本领域的专业技术人员来说将是显而易见的，本文中所定义的一般原理可以在不脱离本发明的精神或范围的情况下，在其它实施例中实现。因此，本发明将不会被限制于本文所示的这些实施例，而是要符合与本文所公开的原理和新颖特点相一致的最宽的范围。The above description of the disclosed embodiments enables any person skilled in the art to make or use the present invention. Various modifications to the above-described embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present invention. Thus, the present invention is not intended to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2020100609316 | 2020-01-19 | ||
| CN202010060931.6ACN111243943A (en) | 2020-01-19 | 2020-01-19 | A kind of integrated coating method of silicon oxide and doped amorphous silicon of TOPCon battery |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112002631Atrue CN112002631A (en) | 2020-11-27 |
Family
ID=70871410
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010060931.6APendingCN111243943A (en) | 2020-01-19 | 2020-01-19 | A kind of integrated coating method of silicon oxide and doped amorphous silicon of TOPCon battery |
| CN202010880854.9APendingCN112002631A (en) | 2020-01-19 | 2020-08-27 | Plate-type integrated coating method and equipment for passivating contact solar cells |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010060931.6APendingCN111243943A (en) | 2020-01-19 | 2020-01-19 | A kind of integrated coating method of silicon oxide and doped amorphous silicon of TOPCon battery |
Country Status (1)
| Country | Link |
|---|---|
| CN (2) | CN111243943A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112795872A (en)* | 2021-01-26 | 2021-05-14 | 常州比太科技有限公司 | A kind of coating equipment for solar cell AZO+SiN laminated protective film |
| CN113122827A (en)* | 2021-03-19 | 2021-07-16 | 苏州晟成光伏设备有限公司 | Equipment and process for preparing back-passivated solar cell |
| CN113445050A (en)* | 2021-05-27 | 2021-09-28 | 苏州晟成光伏设备有限公司 | Device and process for preparing Topcon solar cell |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111739983A (en)* | 2020-08-06 | 2020-10-02 | 普乐（合肥）光技术有限公司 | Apparatus and preparation method for preparing silicon dioxide and polysilicon thin films on the surface of silicon wafers |
| CN114078987A (en)* | 2020-08-18 | 2022-02-22 | 泰州中来光电科技有限公司 | Passivated contact battery and preparation method thereof, and passivated contact structure preparation method and device |
| CN114335236A (en)* | 2020-09-29 | 2022-04-12 | 泰州中来光电科技有限公司 | Passivated contact battery and preparation method thereof, and passivated contact structure and preparation device thereof |
| CN112359320A (en)* | 2020-10-22 | 2021-02-12 | 江苏杰太光电技术有限公司 | Gas source for preparing doped amorphous silicon film |
| CN112359348A (en)* | 2020-10-22 | 2021-02-12 | 江苏杰太光电技术有限公司 | Method and device for depositing doped amorphous silicon thin film without winding plating |
| CN115692544B (en)* | 2021-07-28 | 2025-09-23 | 环晟光伏(江苏)有限公司 | A preparation method for a Topcon battery passivation structure |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2531813A1 (en)* | 1982-08-13 | 1984-02-17 | Spear Reginald | Thin solar cells |
| CN102206807A (en)* | 2010-03-31 | 2011-10-05 | 甘国工 | Method and device for producing flat panel solar heat-absorption coated board |
| CN202626293U (en)* | 2012-06-25 | 2012-12-26 | 吉富新能源科技(上海)有限公司 | Thin film deposition system for hetero-junction solar cell |
| CN102869810A (en)* | 2010-02-03 | 2013-01-09 | 美国迅力光能公司 | Isolation chamber and method of using isolation chamber to make solar cell material |
| CN104775097A (en)* | 2014-09-15 | 2015-07-15 | 厦门映日新材料科技有限公司 | Low-resistivity micro-boron doped rotary sputtering silicon target material and preparation method thereof |
| CN106531848A (en)* | 2016-12-30 | 2017-03-22 | 常州大学 | Black silicon-based on-line preparation equipment of tunneling contact solar cell |
| CN108070841A (en)* | 2016-11-11 | 2018-05-25 | 无锡威迪变色玻璃有限公司 | Continuous coating system and method |
| CN110199376A (en)* | 2016-12-06 | 2019-09-03 | 澳大利亚国立大学 | Solar battery manufacture |
| CN110335901A (en)* | 2019-08-12 | 2019-10-15 | 无锡松煜科技有限公司 | Photovoltaic cell surface passivation system and passivating method |
| CN110527988A (en)* | 2019-09-23 | 2019-12-03 | 苏州迈正科技有限公司 | Heterojunction solar battery on-line continuous filming equipment and the method for carrying out plated film |
| CN111009592A (en)* | 2019-11-04 | 2020-04-14 | 江苏杰太光电技术有限公司 | A kind of preparation method of SiO2 and doped polysilicon laminated passivation film |
- 2020
- 2020-01-19CNCN202010060931.6Apatent/CN111243943A/enactivePending
- 2020-08-27CNCN202010880854.9Apatent/CN112002631A/enactivePending
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2531813A1 (en)* | 1982-08-13 | 1984-02-17 | Spear Reginald | Thin solar cells |
| CN102869810A (en)* | 2010-02-03 | 2013-01-09 | 美国迅力光能公司 | Isolation chamber and method of using isolation chamber to make solar cell material |
| CN102206807A (en)* | 2010-03-31 | 2011-10-05 | 甘国工 | Method and device for producing flat panel solar heat-absorption coated board |
| CN202626293U (en)* | 2012-06-25 | 2012-12-26 | 吉富新能源科技(上海)有限公司 | Thin film deposition system for hetero-junction solar cell |
| CN104775097A (en)* | 2014-09-15 | 2015-07-15 | 厦门映日新材料科技有限公司 | Low-resistivity micro-boron doped rotary sputtering silicon target material and preparation method thereof |
| CN108070841A (en)* | 2016-11-11 | 2018-05-25 | 无锡威迪变色玻璃有限公司 | Continuous coating system and method |
| CN110199376A (en)* | 2016-12-06 | 2019-09-03 | 澳大利亚国立大学 | Solar battery manufacture |
| CN106531848A (en)* | 2016-12-30 | 2017-03-22 | 常州大学 | Black silicon-based on-line preparation equipment of tunneling contact solar cell |
| CN110335901A (en)* | 2019-08-12 | 2019-10-15 | 无锡松煜科技有限公司 | Photovoltaic cell surface passivation system and passivating method |
| CN110527988A (en)* | 2019-09-23 | 2019-12-03 | 苏州迈正科技有限公司 | Heterojunction solar battery on-line continuous filming equipment and the method for carrying out plated film |
| CN111009592A (en)* | 2019-11-04 | 2020-04-14 | 江苏杰太光电技术有限公司 | A kind of preparation method of SiO2 and doped polysilicon laminated passivation film |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112795872A (en)* | 2021-01-26 | 2021-05-14 | 常州比太科技有限公司 | A kind of coating equipment for solar cell AZO+SiN laminated protective film |
| CN113122827A (en)* | 2021-03-19 | 2021-07-16 | 苏州晟成光伏设备有限公司 | Equipment and process for preparing back-passivated solar cell |
| CN113445050A (en)* | 2021-05-27 | 2021-09-28 | 苏州晟成光伏设备有限公司 | Device and process for preparing Topcon solar cell |
| CN113445050B (en)* | 2021-05-27 | 2024-03-26 | 苏州晟成光伏设备有限公司 | Equipment for preparing Topcon solar cell |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111243943A (en) | 2020-06-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN112002631A (en) | Plate-type integrated coating method and equipment for passivating contact solar cells | |
| CN111172518B (en) | A silane-based integrated coating method | |
| US20250151416A1 (en) | Coating apparatus, method and system, solar cell, module, and power generation system | |
| TWI498943B (en) | Pecvd oxide-nitride and oxide-silicon stacks for 3d memory application | |
| KR101760789B1 (en) | Method for depositing multi-layered layers and/or gradient layers | |
| CN113675295B (en) | Method for preparing silicon wafer composite membrane by PECVD and preparation method of TOPCon battery | |
| CN111009592B (en) | A kind of preparation method of SiO2 and doped polysilicon laminated passivation film | |
| WO2022037289A1 (en) | Passivation contact battery and preparation method, and passivation contact structure preparation method and apparatus | |
| JPS62152171A (en) | Manufacturing method of thin film transistor | |
| CN116666501B (en) | A method and application for improving the deposition uniformity of aluminum oxide passivation film | |
| CN112159973A (en) | A device for preparing Topcon battery passivation film and its technological process | |
| JPS5934421B2 (en) | Thin film manufacturing method | |
| CN213357746U (en) | Device for preparing passivation film layer of Topcon battery | |
| JPS62139876A (en) | Deposited film formation method | |
| JPH084070B2 (en) | Thin film semiconductor device and method of forming the same | |
| JP2626701B2 (en) | MIS type field effect semiconductor device | |
| CN115241326A (en) | A solar cell passivation structure, its preparation method, preparation device and use | |
| CN113066896A (en) | A kind of solar cell emitter junction preparation method | |
| JP2907403B2 (en) | Deposition film forming equipment | |
| US20250290198A1 (en) | Method of depositing silicon nitride thin film in trench of substrate | |
| CN112481606A (en) | Gas source and system for PECVD deposition of solar cell doping layer | |
| JP3169243B2 (en) | Continuous formation method of deposited film | |
| CN119663226A (en) | Thin film material and preparation method thereof, and graphite boat carrier and preparation method thereof | |
| Ohtsuka et al. | Low-temperature deposition of Si thin layer by gas-source molecular beam epitaxy | |
| JPS62163314A (en) | Thin film multilayer structure and its formation method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | Application publication date:20201127 |