CN111933784A - Ceramic packaging method of laser chip and ceramic packaging chip structure - Google Patents

Abstract

Translated fromChinese

本发明属于半导体技术领域，提供了一种激光芯片的陶瓷封装方法，包括如下步骤：提供一陶瓷衬底，并开设通孔，得到结构I；在结构I的一面做图形化光刻胶层，之后进行蒸镀或电镀，镀上一层金属层，得到结构II；在结构II的另一面同样做出图形化光刻胶层后镀上金属层，得到结构III；对结构III进行光刻胶剥离，去除光刻胶层，得到结构IV；对结构IV进行切割，将其分切为若干热沉单元；将激光芯片利用焊片焊接到热沉单元其中一面导热区域的金属层上，之后进行打线，将激光芯片的正负极分别连接到热沉单元电极区域的金属层上。本发明制备方法简单，制备的陶瓷封装芯片结构，封装体积更小，散热效果大大提高，进而能够有效提高激光芯片的性能及使用寿命。

The invention belongs to the technical field of semiconductors, and provides a ceramic packaging method for a laser chip, comprising the steps of: providing a ceramic substrate, and opening through holes to obtain a structure I; making a patterned photoresist layer on one side of the structure I, After that, evaporation or electroplating is performed, and a layer of metal layer is plated to obtain structure II; a patterned photoresist layer is also made on the other side of structure II, and then a metal layer is plated to obtain structure III; structure III is subjected to photoresist Peel off, remove the photoresist layer, and obtain structure IV; cut structure IV, and divide it into several heat sink units; weld the laser chip to the metal layer of the heat-conducting area on one side of the heat sink unit with solder tabs, and then carry out Connect the positive and negative electrodes of the laser chip to the metal layer in the electrode area of the heat sink unit by wire bonding. The preparation method of the invention is simple, the prepared ceramic package chip structure has smaller package volume, and the heat dissipation effect is greatly improved, thereby effectively improving the performance and service life of the laser chip.

Description

Translated fromChinese

一种激光芯片的陶瓷封装方法及陶瓷封装芯片结构A kind of ceramic packaging method of laser chip and ceramic packaging chip structure

技术领域technical field

本发明涉及半导体技术领域，尤其涉及一种激光芯片的陶瓷封装方法及陶瓷封装芯片结构。The invention relates to the technical field of semiconductors, in particular to a ceramic packaging method of a laser chip and a ceramic packaging chip structure.

背景技术Background technique

半导体LED作为一种新型光源，具有节能、环保、寿命长、启动速度快、能控制发光光谱和禁止带幅的大小使彩度更高等传统光源无可比拟的优势，发展前景良好，运用领域不断扩展。LED（半导体发光二极管）封装是指发光芯片的封装，相比集成电路封装有较大不同，封装的功能在于提供芯片足够的保护，防止芯片在空气中长期暴露或机械损伤而失效，以提高芯片的稳定性，还需要具有良好光取出效率和良好的散热性，好的封装可以让LED具备更好的发光效率和散热环境，进而提升LED的寿命。As a new type of light source, semiconductor LED has the incomparable advantages of traditional light sources such as energy saving, environmental protection, long life, fast start-up speed, control of the luminous spectrum and the size of the forbidden band to make the chroma higher. extension. LED (Semiconductor Light Emitting Diode) packaging refers to the packaging of light-emitting chips. Compared with integrated circuit packaging, it is quite different. The function of the packaging is to provide sufficient protection for the chip to prevent the chip from failing due to long-term exposure to the air or mechanical damage, so as to improve the performance of the chip. The stability of the LED also needs to have good light extraction efficiency and good heat dissipation. Good packaging can make the LED have better luminous efficiency and heat dissipation environment, thereby improving the life of the LED.

目前，LED的封装多为TO封装，体积大、散热效果差，且插入式安装，安装不便，而目前高功率LED的陶瓷封装，采用陶瓷作为热沉，限制了芯片粘接使用的焊接材料，通常需要银胶等胶合剂将芯片粘接到陶瓷热沉上，但胶合剂形成的固化层导热性不佳，会阻碍芯片与陶瓷热沉间的热传导，散热效果有待进一步提高，此外，在受热环境下，胶合剂形成的固化层粘合强度易减弱，导致结合强度差，甚至会发生芯片与陶瓷热沉间的分离。因此，开发一种激光芯片的陶瓷封装方法及陶瓷封装芯片结构，不但具有迫切的研究价值，也具有良好的经济效益和工业应用潜力，这正是本发明得以完成的动力所在和基础。At present, most of the LED packages are TO packages, which are bulky, have poor heat dissipation, and are inconvenient for plug-in installation. At present, the ceramic packages of high-power LEDs use ceramics as heat sinks, which limits the soldering materials used for chip bonding. Usually, an adhesive such as silver glue is required to bond the chip to the ceramic heat sink, but the thermal conductivity of the cured layer formed by the adhesive is poor, which will hinder the heat conduction between the chip and the ceramic heat sink, and the heat dissipation effect needs to be further improved. Under environmental conditions, the adhesive strength of the cured layer formed by the adhesive is easily weakened, resulting in poor bonding strength and even separation between the chip and the ceramic heat sink. Therefore, the development of a ceramic packaging method and a ceramic packaging chip structure for laser chips not only has urgent research value, but also has good economic benefits and industrial application potential, which is the driving force and foundation of the present invention.

发明内容SUMMARY OF THE INVENTION

为了克服上述所指出的现有技术的缺陷，本发明人对此进行了深入研究，在付出了大量创造性劳动后，从而完成了本发明。In order to overcome the above-mentioned defects of the prior art, the present inventor has conducted in-depth research on this, and has completed the present invention after a lot of creative work.

具体而言，本发明所要解决的技术问题是：提供一种激光芯片的陶瓷封装方法及陶瓷封装芯片结构，以解决目前激光芯片封装器件体积大，且散热效果差，影响芯片性能的技术问题。Specifically, the technical problem to be solved by the present invention is to provide a ceramic packaging method and a ceramic packaging chip structure for a laser chip, so as to solve the technical problems that the current laser chip packaging device is large in size, has poor heat dissipation effect, and affects the performance of the chip.

为解决上述技术问题，本发明的技术方案是：For solving the above-mentioned technical problems, the technical scheme of the present invention is:

一种激光芯片的陶瓷封装方法，包括如下步骤：A ceramic packaging method for a laser chip, comprising the following steps:

S1、提供一陶瓷衬底，并在所述陶瓷衬底上开设通孔，得到结构I；S1, a ceramic substrate is provided, and a through hole is provided on the ceramic substrate to obtain structure I;

S2、在结构I的一面形成光刻胶层，并通过曝光以及显影工艺图形化所述光刻胶层，且图形化的所述光刻胶层位于所述通孔一侧，之后对所述陶瓷衬底具有图形化光刻胶层的一面进行蒸镀或电镀，镀上一层金属层，得到结构II；S2, a photoresist layer is formed on one side of the structure I, and the photoresist layer is patterned through exposure and development processes, and the patterned photoresist layer is located on one side of the through hole, and then the The side of the ceramic substrate with the patterned photoresist layer is evaporated or electroplated, and a layer of metal layer is plated to obtain the structure II;

S3、重复步骤S2，在结构II的另一面同样做出图形化光刻胶层后镀上金属层，得到两面都镀有金属层的结构III，且所述通孔位置处的金属层通过所述通孔相连；S3, Step S2 is repeated, and a patterned photoresist layer is also made on the other side of the structure II and then plated with a metal layer to obtain a structure III with metal layers on both sides, and the metal layer at the position of the through hole passes through all the the through holes are connected;

S4、对结构III通过光刻胶剥离工艺进行光刻胶剥离，去除所述光刻胶层，得到结构IV；S4, performing photoresist stripping on structure III through a photoresist stripping process, removing the photoresist layer, and obtaining structure IV;

S5、对结构IV进行切割，将其分切为若干热沉单元，每个所述热沉单元两面的所述金属层均对应设置，且所述金属层包括中间的导热区域及两侧的电极区域，位于所述陶瓷衬底两面电极区域的所述金属层分别通过所述通孔相连；S5. Cut the structure IV into a plurality of heat sink units, the metal layers on both sides of each heat sink unit are correspondingly arranged, and the metal layers include a heat conduction area in the middle and electrodes on both sides area, the metal layers located in the electrode areas on both sides of the ceramic substrate are respectively connected through the through holes;

S6、将激光芯片利用焊片焊接到所述热沉单元其中一面导热区域的金属层上，之后进行打线，利用金属丝将所述激光芯片的正负极分别连接到所述热沉单元电极区域的所述金属层上。S6. Weld the laser chip to the metal layer of the heat-conducting area on one side of the heat sink unit with solder tabs, and then perform wire bonding, and use metal wires to connect the positive and negative electrodes of the laser chip to the electrodes of the heat sink unit respectively. area on the metal layer.

作为一种改进的技术方案，步骤S1中，所述陶瓷衬底为AlN基陶瓷衬底，厚度为200-500μm，所述通孔设有若干，且若干所述通孔至少两两对应设置，对应设置的所述通孔分别位于切割后所述热沉单元的两端部。As an improved technical solution, in step S1, the ceramic substrate is an AlN-based ceramic substrate with a thickness of 200-500 μm, a plurality of the through holes are arranged, and at least two of the through holes are arranged correspondingly, The correspondingly arranged through holes are respectively located at both ends of the heat sink unit after cutting.

作为一种改进的技术方案，步骤S2中，所述金属层为Cr、Al、Ti、Pt、Au或Ni、Al、Ti、Pt、Au金属的组合结构，且所述金属层的厚度为40-60μm。As an improved technical solution, in step S2, the metal layer is a composite structure of Cr, Al, Ti, Pt, Au or Ni, Al, Ti, Pt, and Au metals, and the thickness of the metal layer is 40 -60μm.

作为一种改进的技术方案，步骤S6中，将所述焊片放置于所述激光芯片和所述导热区域的所述金属层之间，所述焊片为Au80%和Sn20%的预成型金锡焊片，通过回流焊技术，并利用氮气作保护气体，在280-320℃、5-30s条件下融化所述焊片，之后通过缓慢降温的方式达到粘接效果，实现所述激光芯片于所述热沉单元上的焊接固定。As an improved technical solution, in step S6, the soldering piece is placed between the laser chip and the metal layer of the heat conduction area, and the soldering piece is a preformed gold of 80% Au and 20% Sn. Soldering sheet, through reflow soldering technology, and using nitrogen as protective gas, melting the soldering sheet at 280-320 ° C, 5-30s, and then slowly cooling to achieve the bonding effect, to achieve the laser chip in Welding on the heat sink unit is fixed.

作为一种改进的技术方案，步骤S6中，所述金属丝为40-60μm的金线，所述激光芯片通过所述金属丝与电极区域的所述金属层相连，将所述激光芯片的正负极分别转移至所述热沉单元背面两电极区域的所述金属层上。As an improved technical solution, in step S6, the metal wire is a 40-60 μm gold wire, the laser chip is connected to the metal layer in the electrode area through the metal wire, and the positive electrode of the laser chip is connected to the metal layer of the electrode area. The negative electrodes are respectively transferred to the metal layers in the two electrode regions on the back of the heat sink unit.

本发明同时公开了一种陶瓷封装芯片结构，采用上述所述的方法制得，所述陶瓷封装芯片结构包括陶瓷衬底，所述陶瓷衬底的两端部均开设有所述通孔，所述陶瓷衬底的两面均镀有金属层，所述金属层包括中间的导热区域和于所述通孔位置处设置的电极区域，所述导热区域与所述电极区域间分别具有一分离间距，所述陶瓷衬底两面电极区域的所述金属层分别通过所述通孔相连，其中一面电极区域的所述金属层上固定焊接有激光芯片，所述激光芯片的正负极通过所述金属丝分别与电极区域的所述金属层相连。The invention also discloses a ceramic packaged chip structure, which is prepared by the above-mentioned method. The ceramic packaged chip structure includes a ceramic substrate, and both ends of the ceramic substrate are provided with the through holes. Both sides of the ceramic substrate are plated with metal layers, and the metal layers include a heat conduction area in the middle and an electrode area arranged at the position of the through hole, and a separation distance is respectively provided between the heat conduction area and the electrode area, The metal layers in the electrode regions on both sides of the ceramic substrate are connected through the through holes, wherein a laser chip is fixed and welded on the metal layer in the electrode region on one side, and the positive and negative electrodes of the laser chip pass through the metal wires. are respectively connected with the metal layers in the electrode regions.

作为一种改进的技术方案，所述通孔开设有四个，且分别于所述陶瓷衬底的两端部对应设置。As an improved technical solution, there are four through holes, which are correspondingly arranged at both ends of the ceramic substrate.

作为一种改进的技术方案，所述陶瓷衬底的厚度为300μm，所述金属层的厚度为50μm，所述激光芯片与导热区域的所述金属层间通过金锡焊片固定相连。As an improved technical solution, the thickness of the ceramic substrate is 300 μm, the thickness of the metal layer is 50 μm, and the laser chip and the metal layer in the heat conduction area are fixedly connected by gold-tin soldering sheets.

采用了上述技术方案后，本发明的有益效果是：After adopting the above-mentioned technical scheme, the beneficial effects of the present invention are:

该激光芯片的陶瓷封装方法，制备方法简单，可实现热沉单元的高效率制备，且制备的陶瓷封装芯片结构，激光芯片的正负极通过打线及电极区域的金属层转换至陶瓷衬底的背面，可以通过贴片式焊接使用，相较传统的TO封装器件，封装体积更小，且由于激光芯片通过焊片焊接到导热区域的金属层上实现与热沉单元的粘接固定，金锡焊片替代银胶，导热性好，封装芯片结构的散热效果大大提高，进而能够有效提高激光芯片的性能及使用寿命。The ceramic packaging method of the laser chip has a simple preparation method, can realize the high-efficiency preparation of the heat sink unit, and the prepared ceramic packaging chip structure, the positive and negative electrodes of the laser chip are converted to the ceramic substrate through the wire bonding and the metal layer in the electrode area. It can be used by patch welding. Compared with the traditional TO package device, the package volume is smaller, and because the laser chip is welded to the metal layer of the heat conduction area through the solder tab to realize the bonding and fixing with the heat sink unit, the gold The tin solder sheet replaces the silver glue, which has good thermal conductivity, and the heat dissipation effect of the packaged chip structure is greatly improved, which can effectively improve the performance and service life of the laser chip.

附图说明Description of drawings

为了更清楚地说明本发明具体实施方式或现有技术中的技术方案，下面将对具体实施方式或现有技术描述中所需要使用的附图作简单地介绍。在所有附图中，类似的元件或部分一般由类似的附图标记标识。附图中，各元件或部分并不一定按照实际的比例绘制。In order to illustrate the specific embodiments of the present invention or the technical solutions in the prior art more clearly, the following briefly introduces the accompanying drawings that are required to be used in the description of the specific embodiments or the prior art. Similar elements or parts are generally identified by similar reference numerals throughout the drawings. In the drawings, each element or section is not necessarily drawn to actual scale.

图1为本发明激光芯片的陶瓷封装方法流程图；Fig. 1 is the flow chart of the ceramic packaging method of the laser chip of the present invention;

图2为本发明陶瓷衬底的结构示意图；Fig. 2 is the structural representation of the ceramic substrate of the present invention;

图3为本发明结构I的结构示意图；Fig. 3 is the structural representation of structure I of the present invention;

图4为本发明结构I一面形成光刻胶层的结构示意图；Fig. 4 is the structure schematic diagram that the structure I of the present invention forms a photoresist layer on one side;

图5为本发明结构II的结构示意图；Fig. 5 is the structural representation of structure II of the present invention;

图6为本发明结构III的结构示意图；Fig. 6 is the structural representation of structure III of the present invention;

图7为本发明结构IV的结构示意图；Fig. 7 is the structural representation of structure IV of the present invention;

图8为本发明热沉单元的结构示意图；8 is a schematic structural diagram of a heat sink unit of the present invention;

图9为本发明陶瓷封装芯片的结构示意图；9 is a schematic structural diagram of a ceramic package chip of the present invention;

附图标记：1-陶瓷衬底；101-通孔；2-光刻胶层；3-金属层；4-激光芯片；5-金属丝。Reference numerals: 1-ceramic substrate; 101-through hole; 2-photoresist layer; 3-metal layer; 4-laser chip; 5-metal wire.

具体实施方式Detailed ways

下面结合具体的实施例对本发明进一步说明。但这些例举性实施方式的用途和目的仅用来例举本发明，并非对本发明的实际保护范围构成任何形式的任何限定，更非将本发明的保护范围局限于此。The present invention will be further described below in conjunction with specific embodiments. However, the purposes and purposes of these exemplary embodiments are only used to illustrate the present invention, and do not constitute any limitation to the actual protection scope of the present invention, nor do they limit the protection scope of the present invention.

如图1所示，本实施例提供了一种激光芯片4的陶瓷封装方法，包括如下步骤：As shown in FIG. 1 , this embodiment provides a ceramic packaging method for a laser chip 4 , which includes the following steps:

步骤S1：提供一陶瓷衬底1，并在陶瓷衬底1上开设通孔101，得到结构I，如图2和图3所示。Step S1: aceramic substrate 1 is provided, and throughholes 101 are opened on theceramic substrate 1 to obtain a structure I, as shown in FIG. 2 and FIG. 3 .

该步骤中，陶瓷衬底1选用AlN基陶瓷衬底，AlN基陶瓷衬底比氧化铝的导热性能好，散热效果更佳，且陶瓷衬底1的厚度为200-500μm，本实施例中，陶瓷衬底1的厚度为300μm。In this step, theceramic substrate 1 is an AlN-based ceramic substrate. The AlN-based ceramic substrate has better thermal conductivity and better heat dissipation effect than alumina, and the thickness of theceramic substrate 1 is 200-500 μm. In this embodiment, The thickness of theceramic substrate 1 is 300 μm.

该步骤中，通孔101设有若干，且若干通孔101至少两两对应设置，对应设置的通孔101分别位于切割后热沉单元的两端部，对陶瓷衬底1开孔设备及开孔工艺为本领域技术人员所共识的，在此不作赘述。In this step, a plurality of throughholes 101 are provided, and at least two of the plurality of throughholes 101 are arranged correspondingly, and the correspondingly arranged throughholes 101 are respectively located at both ends of the heat sink unit after cutting, and theceramic substrate 1 is drilled and drilled. The hole process is recognized by those skilled in the art and will not be repeated here.

步骤S2：在结构I的一面形成光刻胶层2，并通过曝光以及显影工艺图形化光刻胶层2，且图形化的光刻胶层2位于通孔101一侧，如图4所示，之后对陶瓷衬底1具有图形化光刻胶层2的一面进行蒸镀或电镀，镀上一层金属层3，得到结构II，如图5所示。Step S2: forming aphotoresist layer 2 on one side of the structure I, and patterning thephotoresist layer 2 through exposure and developing processes, and the patternedphotoresist layer 2 is located on the side of the throughhole 101, as shown in FIG. 4 Then, vapor deposition or electroplating is performed on the side of theceramic substrate 1 with the patternedphotoresist layer 2, and a layer ofmetal layer 3 is plated to obtain the structure II, as shown in FIG. 5 .

该步骤中，图形化光刻胶为常规工艺，在此不作赘述，金属层3为Cr、Al、Ti、Pt、Au或Ni、Al、Ti、Pt、Au金属的组合结构，且金属层3的厚度为40-60μm，本实施例中，金属层3的厚度为50μm。In this step, the patterned photoresist is a conventional process, which will not be repeated here. Themetal layer 3 is a composite structure of Cr, Al, Ti, Pt, Au or Ni, Al, Ti, Pt, and Au metals, and themetal layer 3 The thickness of themetal layer 3 is 40-60 μm. In this embodiment, the thickness of themetal layer 3 is 50 μm.

步骤S3：重复步骤S2，在结构II的另一面同样做出图形化光刻胶层2后镀上金属层3，得到两面都镀有金属层3的结构III，且通孔101位置处的金属层3通过通孔101相连，如图6所示。Step S3: Step S2 is repeated, and the patternedphotoresist layer 2 is also formed on the other side of the structure II, and then themetal layer 3 is plated to obtain the structure III with themetal layer 3 plated on both sides, and the metal layer at the position of the throughhole 101 is obtained.Layers 3 are connected byvias 101 as shown in FIG. 6 .

该步骤中，镀金属层3工艺时，通孔101内会镀上金属，实现陶瓷衬底1两面金属层3的连接。In this step, during the process of plating themetal layer 3 , the throughhole 101 is plated with metal to realize the connection between themetal layers 3 on both sides of theceramic substrate 1 .

步骤S4：对结构III通过光刻胶剥离工艺进行光刻胶剥离，去除光刻胶层2，得到结构IV，如图7所示。Step S4 : performing photoresist stripping on the structure III through a photoresist stripping process, and removing thephotoresist layer 2 to obtain the structure IV, as shown in FIG. 7 .

该步骤中，对光刻胶剥离时，光刻胶上镀有的金属层3会随光刻胶剥离而去除，留下镀在陶瓷衬底1上的金属层3。In this step, when the photoresist is peeled off, themetal layer 3 plated on the photoresist will be removed along with the peeling of the photoresist, leaving themetal layer 3 plated on theceramic substrate 1 .

步骤S5：对结构IV进行切割，将其分切为若干热沉单元，如图8所示，每个热沉单元两面的金属层3均对应设置，且金属层3包括中间的导热区域及两侧的电极区域，位于陶瓷衬底1两面电极区域的金属层3分别通过通孔101相连。Step S5: The structure IV is cut and divided into several heat sink units. As shown in FIG. 8 , themetal layers 3 on both sides of each heat sink unit are correspondingly arranged, and themetal layer 3 includes a middle heat conduction area and two heat sink units. The metal layers 3 located in the electrode regions on both sides of theceramic substrate 1 are connected through throughholes 101 respectively.

该步骤中，采用切割设备对陶瓷衬底1进行分切为本领域技术人员所共识的，在此不作赘述，分切后的单个热沉单元用以实现激光芯片4的封装，且热沉单元中间的导热区域，为金属层3的大部分厚度区，用以实现有效导热散热。In this step, the use of cutting equipment to cut theceramic substrate 1 is recognized by those skilled in the art, and details are not described here. The single heat sink unit after cutting is used to implement the packaging of the laser chip 4, and the heat sink unit The heat conduction area in the middle is most of the thickness area of themetal layer 3 to achieve effective heat conduction and heat dissipation.

步骤S6：将激光芯片4利用焊片焊接到热沉单元其中一面导热区域的金属层3上，之后进行打线，利用金属丝5将激光芯片4的正负极分别连接到热沉单元电极区域的金属层3上，如图9所示。Step S6: The laser chip 4 is welded to themetal layer 3 of the heat-conducting area on one side of the heat sink unit with solder tabs, and then wire is bonded, and the positive and negative electrodes of the laser chip 4 are respectively connected to the electrode area of the heat sink unit by using themetal wire 5 on themetal layer 3, as shown in Figure 9.

该步骤中，对激光芯片4于热沉单元上焊接时，将焊片放置于激光芯片4和导热区域的金属层3之间，焊片为Au80%和Sn20%的预成型金锡焊片，通过回流焊技术，并利用氮气作保护气体，在280-320℃、5-30s条件下融化焊片，之后通过缓慢降温的方式达到粘接效果，实现激光芯片4于热沉单元上的焊接固定。In this step, when the laser chip 4 is welded on the heat sink unit, the welding sheet is placed between the laser chip 4 and themetal layer 3 in the heat conduction area. Through the reflow soldering technology and using nitrogen as the protective gas, the solder pieces are melted under the conditions of 280-320°C and 5-30s, and then the bonding effect is achieved by slow cooling, and the welding and fixing of the laser chip 4 on the heat sink unit is realized. .

本实施例中，激光芯片4焊接的温度控制在300℃上下，加热时间25s，能够实现金锡焊片的有效融化，实现激光芯片4的高效焊接。In this embodiment, the welding temperature of the laser chip 4 is controlled at around 300° C. and the heating time is 25 s, which can effectively melt the gold-tin solder sheet and realize the efficient welding of the laser chip 4 .

该步骤中，金属丝5采用40-60μm的金线，激光芯片4通过金属丝5与电极区域的金属层3相连，将激光芯片4的正负极分别转移至热沉单元背面两电极区域的金属层3上，便于贴片使用。In this step, themetal wire 5 is a 40-60 μm gold wire, the laser chip 4 is connected to themetal layer 3 in the electrode area through themetal wire 5, and the positive and negative electrodes of the laser chip 4 are respectively transferred to the two electrode areas on the back of the heat sink unit. On themetal layer 3, it is convenient for patch use.

本发明同时提供了一种陶瓷封装芯片结构，如图9所示，采用上述的制备方法制得，陶瓷封装芯片结构为经步骤S6后最终得到的封装器件，包括陶瓷衬底1，陶瓷衬底1的两端部均开设有通孔101，陶瓷衬底1的两面均镀有金属层3，金属层3包括中间的导热区域和于通孔101位置处设置的电极区域，导热区域与电极区域间分别具有一分离间距，陶瓷衬底1两面电极区域的金属层3分别通过通孔101相连，其中一面电极区域的金属层3上固定焊接有激光芯片4，激光芯片4的正负极通过金属丝5分别与电极区域的金属层3相连。The present invention also provides a ceramic packaged chip structure, as shown in FIG. 9 , which is prepared by the above-mentioned preparation method. The ceramic packaged chip structure is a packaged device finally obtained after step S6, including aceramic substrate 1, a ceramic substrate Both ends of 1 are provided with throughholes 101, and both sides of theceramic substrate 1 are plated with ametal layer 3. Themetal layer 3 includes a middle heat conduction area and an electrode area set at the position of the throughhole 101. The heat conduction area and the electrode area There is a separation distance between them, themetal layers 3 of the electrode areas on both sides of theceramic substrate 1 are connected through the throughholes 101 respectively, and a laser chip 4 is fixedly welded on themetal layer 3 of the electrode area on one side, and the positive and negative electrodes of the laser chip 4 pass through the metal layer. Thewires 5 are respectively connected to themetal layer 3 of the electrode area.

本实施例中，通孔101开设有四个，且分别于陶瓷衬底1的两端部对应设置，确保陶瓷衬底1两侧电极区域金属层3间的有效连接。In this embodiment, there are four throughholes 101 , which are correspondingly arranged at both ends of theceramic substrate 1 to ensure effective connection between themetal layers 3 in the electrode regions on both sides of theceramic substrate 1 .

本实施例中，通过上述制备方法制备得到的陶瓷封装芯片结构，陶瓷衬底1的厚度为300μm，金属层3的厚度为50μm，激光芯片4与导热区域的金属层3间通过金锡焊片固定相连，导热散热性能好。In this embodiment, in the ceramic packaged chip structure prepared by the above preparation method, the thickness of theceramic substrate 1 is 300 μm, the thickness of themetal layer 3 is 50 μm, and the laser chip 4 and themetal layer 3 in the heat conduction area pass through a gold-tin solder sheet Fixed connection, good thermal conductivity and heat dissipation performance.

基于上述步骤的激光芯片4的陶瓷封装方法，制备方法简单，可实现热沉单元的高效率制备，且制备的陶瓷封装芯片结构，激光芯片4的正负极通过打线及电极区域的金属层3转换至陶瓷衬底1的背面，可以通过贴片式焊接使用，相较传统的TO封装器件，封装体积更小，且由于激光芯片4通过焊片焊接到导热区域的金属层3上实现与热沉单元的粘接固定，金锡焊片替代银胶，导热性好，封装芯片结构的散热效果大大提高，进而能够有效提高激光芯片4的性能及使用寿命。Based on the ceramic packaging method of the laser chip 4 based on the above steps, the preparation method is simple, the high-efficiency preparation of the heat sink unit can be realized, and the prepared ceramic packaging chip structure, the positive and negative electrodes of the laser chip 4 pass through the wire bonding and the metal layer in the electrode area. 3 is converted to the back of theceramic substrate 1, which can be used by patch welding. Compared with the traditional TO package device, the package volume is smaller, and because the laser chip 4 is welded to themetal layer 3 in the thermal conduction area through the solder tab, the The heat sink unit is bonded and fixed, and the gold-tin solder sheet replaces the silver glue, which has good thermal conductivity, and the heat dissipation effect of the packaged chip structure is greatly improved, which can effectively improve the performance and service life of the laser chip 4 .

应当理解，这些实施例的用途仅用于说明本发明而非意欲限制本发明的保护范围。此外，也应理解，在阅读了本发明的技术内容之后，本领域技术人员可以对本发明作各种改动、修改和/或变型，所有的这些等价形式同样落于本申请所附权利要求书所限定的保护范围之内。It should be understood that the purposes of these embodiments are only used to illustrate the present invention and are not intended to limit the protection scope of the present invention. In addition, it should also be understood that after reading the technical content of the present invention, those skilled in the art can make various changes, modifications and/or modifications to the present invention, and all these equivalent forms also fall within the appended claims of this application. within the limited scope of protection.

Claims (8)

1. A ceramic packaging method of a laser chip is characterized by comprising the following steps:

s1, providing a ceramic substrate, and forming a through hole on the ceramic substrate to obtain a structure I;

s2, forming a photoresist layer on one surface of the structure I, patterning the photoresist layer through exposure and development processes, wherein the patterned photoresist layer is positioned on one side of the through hole, then performing evaporation or electroplating on one surface of the ceramic substrate with the patterned photoresist layer, and plating a metal layer to obtain a structure II;

s3, repeating the step S2, forming a graphical photoresist layer on the other surface of the structure II, and then plating a metal layer to obtain a structure III with both surfaces plated with metal layers, wherein the metal layers at the positions of the through holes are connected through the through holes;

s4, carrying out photoresist stripping on the structure III through a photoresist stripping process, and removing the photoresist layer to obtain a structure IV;

s5, cutting the structure IV into a plurality of heat sink units, wherein the metal layers on the two sides of each heat sink unit are correspondingly arranged and comprise a middle heat conduction area and electrode areas on the two sides, and the metal layers on the electrode areas on the two sides of the ceramic substrate are respectively connected through the through holes;

and S6, welding the laser chip on the metal layer of one heat conducting area of the heat sink unit by using a soldering lug, then routing, and respectively connecting the anode and the cathode of the laser chip to the metal layer of the electrode area of the heat sink unit by using metal wires.

2. The method for ceramic package of a laser chip as claimed in claim 1, wherein in step S1, the ceramic substrate is an AlN-based ceramic substrate with a thickness of 200-500 μm, the plurality of through holes are provided, and at least two of the plurality of through holes are disposed correspondingly, and the correspondingly disposed through holes are respectively located at two ends of the heat sink unit after cutting.

3. The ceramic packaging method of the laser chip according to claim 2, wherein in step S2, the metal layer is a combination of Cr, Al, Ti, Pt, Au or Ni, Al, Ti, Pt, Au, and has a thickness of 40-60 μm.

4. The method for ceramic packaging of a laser chip as claimed in claim 3, wherein in step S6, the solder pad is placed between the laser chip and the metal layer of the heat conducting area, the solder pad is a preformed Au80% and Sn20% solder pad, the solder pad is melted by reflow soldering technology and using nitrogen as a protective gas under the conditions of 280-320 ℃ and 5-30S, and then the bonding effect is achieved by slow cooling, so as to realize the soldering fixation of the laser chip on the heat sink unit.

5. The ceramic packaging method for the laser chip as claimed in claim 4, wherein in step S6, the metal wire is a 40-60 μm gold wire, the laser chip is connected to the metal layer in the electrode area through the metal wire, and the anode and the cathode of the laser chip are respectively transferred to the metal layer in the two electrode areas on the back of the heat sink unit.

6. A ceramic package chip structure is characterized by being manufactured by the method of claim 1, and comprising a ceramic substrate, wherein the through holes are formed in two end parts of the ceramic substrate, metal layers are plated on two surfaces of the ceramic substrate, each metal layer comprises a middle heat conduction area and an electrode area arranged at the position of the through hole, a separation distance is formed between each heat conduction area and each electrode area, the metal layers of the electrode areas on the two surfaces of the ceramic substrate are respectively connected through the through holes, a laser chip is fixedly welded on the metal layer of one electrode area, and the positive electrode and the negative electrode of the laser chip are respectively connected with the metal layers of the electrode areas through metal wires.

7. The ceramic packaged chip structure of claim 6, wherein: the number of the through holes is four, and the through holes are respectively and correspondingly arranged at two end parts of the ceramic substrate.

8. The ceramic packaged chip structure of claim 7, wherein: the thickness of the ceramic substrate is 300 microns, the thickness of the metal layer is 50 microns, and the laser chip is fixedly connected with the metal layer of the heat conduction area through a gold-tin soldering sheet.

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