CN111933506A - Monitoring method, device and equipment for ion implantation - Google Patents

Abstract

The application discloses a method, a device and equipment for monitoring ion implantation, wherein the method comprises the following steps: deflecting a window of a current testing module, wherein the current testing module is arranged in a mass-charge screener of an ion implanter, and the window is used for deflecting the ion beam screened by the mass-charge screener to pass; acquiring monitoring information, wherein the monitoring information comprises a deflection angle of a window and a current value corresponding to the deflection angle, and the current value is the current value of current generated by ions in an ion beam through the window; and calculating the purity of the target ions in the ion beam according to the monitoring information. According to the method, the current testing module comprising the window is arranged in the mass-charge screening device of the ion implantation equipment, so that the window deflects and the current value corresponding to the deflection angle and the deflection angle is recorded, and the purity of the target ions in the ion beam is calculated based on the current value corresponding to the deflection angle and the deflection angle, so that the real-time monitoring of the purity of the ion implantation is realized, and the manufacturing efficiency of a semiconductor device is improved.

Description

Monitoring method, device and equipment for ion implantation

Technical Field

The present application relates to the field of semiconductor manufacturing technologies, and in particular, to a method, an apparatus, and a device for monitoring ion implantation.

Background

Ion implantation is an important doping technique in semiconductor manufacturing industry, and is to form ion beams to bombard the surface of a semiconductor wafer after accelerating impurity ions to obtain large kinetic energy in a vacuum environment, so as to dope semiconductor devices.

Ion implantation equipment typically includes an arc chamber, a mass-to-charge filter, an accelerator tube, a scanning system, and a reaction chamber. In the related art, ions generated in an arc striking chamber are introduced into a mass-to-charge screener, which screens the ions using their mass-to-charge ratios, thereby controlling the purity of an ion beam.

However, the ion implantation apparatus provided in the related art has difficulty in monitoring the purity of the ion beam in real time, and thus, has difficulty in adjusting the purity of the ion beam in real time in a case where the purity of the ion beam is not satisfactory, resulting in low manufacturing efficiency.

Disclosure of Invention

The application provides a method, a device and equipment for monitoring ion implantation, which can solve the problem that the ion implantation equipment provided in the related technology is difficult to monitor the purity of an ion beam in real time, thereby causing lower manufacturing efficiency.

In one aspect, an embodiment of the present application provides a method for monitoring ion implantation, including:

deflecting a window of a current testing module, wherein the current testing module is arranged in a mass-charge screener of an ion implanter, and the window is used for deflecting the ion beam screened by the mass-charge screener to pass;

acquiring monitoring information, wherein the monitoring information comprises a deflection angle of the window and a current value corresponding to the deflection angle, and the current value is a current value of a current generated by ions in the ion beam through the window;

and calculating the purity of the target ions in the ion beam according to the monitoring information.

Optionally, the current testing module comprises at least two of the windows.

Optionally, the deflecting the window of the current testing module includes:

and making each window of the at least two windows do the same periodic swing.

Optionally, the acquiring monitoring information includes:

and recording the current value of each window and the deflection angle corresponding to the current value when each window swings periodically to obtain the monitoring information.

Optionally, the calculating the purity of the target ion in the ion beam according to the monitoring information includes:

acquiring the maximum current value of each window and a deflection angle corresponding to the maximum current value;

and calculating the purity according to the maximum current value and the deflection angle corresponding to the maximum current value.

On the other hand, an embodiment of the present application provides a monitoring device, including:

the current testing module is arranged in a mass-charge screener of the ion implanter and comprises a window, and the window is used for deflecting the ion beam screened by the mass-charge screener to pass;

a control module for deflecting the window; acquiring monitoring information, wherein the monitoring information comprises a deflection angle of the window and a current value corresponding to the deflection angle, and the current value is a current value of a current generated by ions in the ion beam through the window; and calculating the purity of the target ions in the ion beam according to the monitoring information.

Optionally, the current testing module comprises at least two windows.

Optionally, the current testing module comprises a graphite current tester.

Optionally, the window has a diameter of 0.5 millimeters (mm) to 3 mm.

In another aspect, an embodiment of the present application provides an ion implantation apparatus, including an arc starting chamber, a mass-to-charge filter, and the monitoring device as described in any of the above.

The technical scheme at least comprises the following advantages:

the current testing module comprising the window is arranged in the mass-charge filter of the ion implantation equipment, so that the window deflects and records the deflection angle and the current value corresponding to the deflection angle, and the purity of target ions in the ion beam is calculated and obtained on the basis of the deflection angle and the current value corresponding to the deflection angle, thereby realizing the real-time monitoring of the purity of ion implantation and improving the manufacturing efficiency of semiconductor devices.

Drawings

In order to more clearly illustrate the detailed description of the present application or the technical solutions in the prior art, the drawings needed to be used in the detailed description of the present application or the prior art description will be briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative efforts.

Fig. 1 is a schematic view of an ion implantation apparatus provided in an exemplary embodiment of the present application;

FIG. 2 is a schematic diagram of the deflection of doubly charged ions;

FIG. 3 is a schematic diagram of deflection of singly charged ions;

fig. 4 is a flow chart of a method for monitoring ion implantation provided by an exemplary embodiment of the present application;

FIG. 5 is a schematic diagram of a current test module provided by an exemplary embodiment of the present application;

fig. 6 is a schematic view of a target ion passing through a window during ion implantation as provided by an exemplary embodiment of the present application;

fig. 7 is a schematic view of other ions passing through a window during ion implantation as provided by an exemplary embodiment of the present application

FIG. 8 is a schematic diagram of a computer device provided in an exemplary embodiment of the present application.

Detailed Description

The technical solutions in the present application will be described clearly and completely with reference to the accompanying drawings, and it is obvious that the described embodiments are some, but not all embodiments of the present application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.

In the description of the present application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present application. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.

In the description of the present application, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; the connection can be mechanical connection or electrical connection; the two elements may be directly connected or indirectly connected through an intermediate medium, or may be communicated with each other inside the two elements, or may be wirelessly connected or wired connected. The specific meaning of the above terms in the present application can be understood in a specific case by those of ordinary skill in the art.

In addition, the technical features mentioned in the different embodiments of the present application described below may be combined with each other as long as they do not conflict with each other.

Referring to fig. 1, a schematic diagram of an ion implantation apparatus provided by an exemplary embodiment of the present application is shown. As shown in fig. 1, the ion implantation apparatus includes anarc starting chamber 110, a mass-to-charge filter 120, acurrent testing module 131, acontrol module 132, and areaction chamber 140, wherein a communication connection is established between thecurrent testing module 131 and thecontrol module 132, and thecurrent testing module 131 and thecontrol module 132 constitute a monitoring device for monitoring the purity of the ion beam.

To include threeBoron Fluoride (BF)₃) The ion implantation apparatus will be described by taking the reaction gas of (1) as an example. As shown in FIG. 1, electrons generated from filament 111 are accelerated by an electric field and bombard a reactant gas containing boron trifluoride to ionize it, producing different types of ions, including singly charged ions (e.g., B (10))⁺、B(11)⁺、BF(30)⁺And BF₂(30)⁺) And doubly charged ions (e.g. B (10)²⁺、B(11)²⁺、BF(30)²⁺And BF₂(30)²⁺) The mass to charge ratios of the different types of ions are different. The generated ions are transported to themass charge filter 120, and different types of ions pass through the magnet of themass charge filter 120 with different deflection radii due to different mass-to-charge ratios, for example, as shown in FIG. 2, a doubly charged ion B (11)²⁺Has a deflection radius of R, as shown in FIG. 3, and is a singly charged ion B (11)⁺Is about 1.4R, the mass-to-charge ratio screener 120 can screen the ions to be passed through into an ion beam by the deflection radius of different types of ions.

However, due to the difference of the incident angles, different types of ions also pass through the same deflection region, thereby affecting the purity of the ion beam and being difficult to monitor in real time.

In view of this, in the embodiment of the present application, thecurrent testing module 131 is disposed in the mass-to-charge separator 120, thecurrent testing module 131 includes a deflectable window, when the filtered ion beam passes through the window, thecontrol module 132 records the deflection angle and the current value of the current generated when the ion beam passes through the window, obtains the monitoring information, and calculates the purity of the target ion (e.g., singly-charged ion) in the ion beam according to the monitoring information. The ion beam is output from the mass-to-charge filter 120 and enters thereaction chamber 140 to bombard the surface of thewafer 101 in thereaction chamber 140.

Referring to fig. 4, a flowchart of a monitoring method for ion implantation provided by an exemplary embodiment of the present application is shown, which may be executed by thecontrol module 132 in the embodiment of fig. 1, and includes:

step 401, deflect a window of a current test module.

Thecontrol module 132 sends a control instruction to thecurrent test module 131, which is used to deflect the window. Thecontrol module 132 may be a control device provided in the ion implantation apparatus, or may be an independently provided control device.

Illustratively, as shown in fig. 5, thecurrent testing module 131 includes at least two windows (in fig. 5, 6windows 1311, 1312, 1313, 1314, 1315, and 1316 are exemplarily illustrated), each of which makes the same periodic swing according to the control command of thecontrol module 132, and the windows are louvers, and the swinging windows are louvers. For example, takingwindow 1311 as an example, at time interval Δ t, from 0 ° to-30 °, at the next time interval Δ t, from-30 ° to 0 °, at the next time interval Δ t, from 0 ° to 30 °, at the next time interval Δ t, from 30 ° to 0 °. Wherein the deflection angle is an angle between a central axis of the window (central axis of the blade if the window is a louver) and the ion beam (for example, an angle α between a central axis a and a moving direction b of the ion beam as shown in fig. 7). Optionally, thecurrent testing module 131 includes a graphite current tester; optionally, the width of the window is 0.5 mm to 3 mm (e.g., may be 1 mm); optionally, the distance between each window is equal.

Step 402, obtaining monitoring information, where the monitoring information includes a deflection angle of a window and a current value corresponding to the deflection angle, where the current value is a current value of a current generated by an ion in the ion beam passing through the window.

Optionally, when each window swings periodically, the current value of each window and the deflection angle corresponding to the current value are recorded, so as to obtain monitoring information. For example, taking thewindow 1311 as an example, when the deflection angle of thewindow 1311 is 0 °, the current value I of the current formed by the ion beam passing through thewindow 1311 at 0 ° is recorded₁When the deflection angle of thewindow 1311 is 5 °, the current value I of the current formed by the ion beam passing through thewindow 1311 at 5 ° is recorded₂… … the same sampling method can be used for monitoring information in other windows. Wherein, the monitoring information can be sampled by every predetermined time period, or each window can be deflected to a predetermined angleThe window is sampled.

And 403, calculating the purity of the target ions in the ion beam according to the monitoring information.

The target ions are ions required in the ion implantation process, and may be singly charged ions, for example.

Optionally, instep 403, "calculating the purity of the target ion in the ion beam according to the monitoring information" includes, but is not limited to: acquiring the maximum current value of each window and the deflection angle corresponding to the maximum current value; and calculating the purity of the target ions according to the maximum current value and the deflection angle corresponding to the maximum current value.

Referring to fig. 6, a schematic diagram of target ions passing through a window is shown; referring to fig. 7, a schematic view of other ion passing windows is shown. As shown in fig. 6, ideally, the ions screened by the mass-to-charge filter 120 vertically pass through the windows of thecurrent testing module 131, so that the value of the current passing through the windows is the largest when the deflection angle of each window is 0 °. Then, in practice, as shown in fig. 7, since the incidence angle of other ions is different from that of the target ions, the ions can pass through the region through which the mass-to-charge filter 120 passes, and when the ions pass through thecurrent test module 131, the incidence angle is not 0 °, and therefore the ions cannot pass through the window with the deflection angle of 0 °, so that the current value is small.

In summary, in the embodiment of the present application, the current testing module including the window is disposed in the mass-to-charge filter of the ion implantation apparatus, so that the window deflects and records the deflection angle and the current value corresponding to the deflection angle, and the purity of the target ion in the ion beam is calculated based on the deflection angle and the current value corresponding to the deflection angle, thereby implementing real-time monitoring on the purity of the ion implantation, and improving the manufacturing efficiency of the semiconductor device.

Referring to fig. 8, a schematic diagram of a computer device provided in an exemplary embodiment of the present application, which may be thecontrol module 132 in the embodiment of fig. 1, is shown, and the computer device includes: aprocessor 801 and amemory 802.

Theprocessor 801 may be a Central Processing Unit (CPU), a Network Processor (NP), or a combination of a CPU and an NP. Theprocessor 801 may further include a hardware chip. The hardware chip may be an application-specific integrated circuit (ASIC), a Programmable Logic Device (PLD), or a combination thereof. The PLD may be a complex 9 programmable logic device (CPLD), a field-programmable gate array (FPGA), a General Array Logic (GAL), or any combination thereof.

Thememory 802 is connected to theprocessor 801 through a bus or other means, and at least one instruction, at least one program, a code set, or a set of instructions is stored in thememory 802, and the at least one instruction, at least one program, code set, or set of instructions is loaded and executed by theprocessor 801 to implement the monitoring method for ion implantation provided in the above embodiments. Thememory 802 may be a volatile memory (volatile memory), a non-volatile memory (non-volatile memory), or a combination thereof. The volatile memory may be a random-access memory (RAM), such as a Static Random Access Memory (SRAM) or a Dynamic Random Access Memory (DRAM). The nonvolatile memory may be a Read Only Memory (ROM), such as a Programmable Read Only Memory (PROM), an Erasable Programmable Read Only Memory (EPROM), and an electrically erasable programmable read-only memory (EEPROM). The nonvolatile memory may also be a flash memory (flash memory), a magnetic memory such as a magnetic tape (magnetic tape), a floppy disk (floppy disk), and a hard disk. The non-volatile memory may also be an optical disc.

The present application further provides a computer-readable storage medium having at least one instruction, at least one program, a set of codes, or a set of instructions stored therein, which is loaded and executed by the processor to implement the method for monitoring ion implantation according to any of the above embodiments.

The present application further provides a computer program product, which when run on a computer, causes the computer to execute the monitoring method for ion implantation provided by the above method embodiments.

It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications of this invention are intended to be covered by the scope of the invention as expressed herein.

Claims (10)

1. A method for monitoring ion implantation, comprising:

deflecting a window of a current testing module, wherein the current testing module is arranged in a mass-charge screener of an ion implanter, and the window is used for deflecting the ion beam screened by the mass-charge screener to pass;

acquiring monitoring information, wherein the monitoring information comprises a deflection angle of the window and a current value corresponding to the deflection angle, and the current value is a current value of a current generated by ions in the ion beam through the window;

and calculating the purity of the target ions in the ion beam according to the monitoring information.

2. The method of claim 1, wherein the current test module comprises at least two of the windows.

3. The method of claim 2, wherein deflecting the window of the current testing module comprises:

and making each window of the at least two windows do the same periodic swing.

4. The method of claim 3, wherein the obtaining monitoring information comprises:

and recording the current value of each window and the deflection angle corresponding to the current value when each window swings periodically to obtain the monitoring information.

5. The method of claim 4, wherein said calculating a purity of a target ion in the ion beam based on the monitored information comprises:

acquiring the maximum current value of each window and a deflection angle corresponding to the maximum current value;

and calculating the purity according to the maximum current value and the deflection angle corresponding to the maximum current value.

6. A monitoring device, comprising:

the current testing module is arranged in a mass-charge screener of the ion implanter and comprises a window, and the window is used for deflecting the ion beam screened by the mass-charge screener to pass;

a control module for deflecting the window; acquiring monitoring information, wherein the monitoring information comprises a deflection angle of the window and a current value corresponding to the deflection angle, and the current value is a current value of a current generated by ions in the ion beam through the window; and calculating the purity of the target ions in the ion beam according to the monitoring information.

7. The apparatus of claim 6, wherein the current test module comprises at least two windows.

8. The apparatus of claim 7, wherein the current testing module comprises a graphite current tester.

9. The device of claim 8, wherein the window has a width of 0.5 mm to 3 mm.

10. An ion implantation apparatus comprising an arc chamber, a mass-to-charge filter and a monitoring device as claimed in any one of claims 6 to 9.

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