CN111863769A - A heat-dissipating TSV adapter plate with embedded micro-channels and a manufacturing method thereof - Google Patents
A heat-dissipating TSV adapter plate with embedded micro-channels and a manufacturing method thereofDownload PDFInfo
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Abstract
Translated fromChinese
Description
Translated fromChinese技术领域technical field
本发明涉及集成电路封装技术领域，特别涉及一种内嵌微流道的散热型TSV转接板及其制作方法。The invention relates to the technical field of integrated circuit packaging, in particular to a heat dissipation type TSV adapter board with embedded micro-channels and a manufacturing method thereof.
背景技术Background technique
随着信息时代的到来，人们都对集成电路的存储、处理等能力要求越来越高；伴随着集成电路的集成度也不断提升，但随着10nm节点制造工艺芯片完成量产，以缩小二维尺寸提高集成电路集成度的技术发展走向极限，于是提出基于TSV的三维芯片集成技术。With the advent of the information age, people have higher and higher requirements for the storage, processing and other capabilities of integrated circuits; with the continuous improvement of the integration of integrated circuits, but with the completion of mass production of 10nm node manufacturing process chips, in order to reduce the size of the two The development of the technology of improving the integration of integrated circuits with dimensional size is reaching the limit, so a three-dimensional chip integration technology based on TSV is proposed.
ITRS（International Technology Roadmap for Semiconductors，国际半导体技术发展路线图）报告指出，当硅晶体管栅宽达10nm，单颗高性能芯片能量密度将会超过100W/cm2，若将高性能芯片进行TSV三维立体集成，高功率点将在三维立体空间分布，能量密度将会是堆叠芯片能量密度的总和，这将远远超过现有散热方式的散热能力，如何进行有效散热成为制约TSV三维集成的主要技术难题。The ITRS (International Technology Roadmap for Semiconductors) report pointed out that when the gate width of silicon transistors reaches 10nm, the energy density of a single high-performance chip will exceed 100W/cm2 . Integrated, high power points will be distributed in three-dimensional space, and the energy density will be the sum of the energy density of the stacked chips, which will far exceed the heat dissipation capacity of the existing heat dissipation methods. How to effectively dissipate heat has become the main technical problem restricting the three-dimensional integration of TSVs. .
发明内容SUMMARY OF THE INVENTION
本发明的目的在于提供一种内嵌微流道的散热型TSV转接板及其制作方法，以解决现有的TSV三维集成散热能力差的问题。The purpose of the present invention is to provide a heat-dissipating TSV adapter plate with embedded micro-channels and a manufacturing method thereof, so as to solve the problem of poor heat-dissipation capability of the existing TSV three-dimensional integration.
为解决上述技术问题，本发明提供一种内嵌微流道的散热型TSV转接板，微流道凹槽层和TSV盖板层，所述微流道凹槽层和所述TSV盖板层通过键合层连接。In order to solve the above technical problems, the present invention provides a heat dissipation type TSV adapter plate with embedded microchannels, a microchannel groove layer and a TSV cover plate layer, the microchannel groove layer and the TSV cover plate The layers are connected by bonding layers.
可选的，所述微流道凹槽层包括通过刻蚀形成的微流道凹槽和转接板体通孔，所述转接板体通孔内设有侧壁金属化层；Optionally, the micro-channel groove layer includes a micro-channel groove formed by etching and a through hole of an adapter plate body, and a sidewall metallization layer is arranged in the through hole of the adapter plate body;
所述TSV盖板层包括通过刻蚀形成的微流体出入口和TSV通孔，所述TSV通孔内设有侧壁金属化层。The TSV cover plate layer includes a microfluidic inlet and outlet formed by etching and a TSV through hole, and a sidewall metallization layer is arranged in the TSV through hole.
可选的，所述键合层位于所述转接板体TSV通孔、所述TSV通孔、所述微流道凹槽和所述微流体出入口的周边。Optionally, the bonding layer is located on the periphery of the TSV through hole of the adapter plate body, the TSV through hole, the microfluidic channel groove and the microfluidic inlet and outlet.
可选的，所述微流道凹槽的结构包括直线型、S型和折线型。Optionally, the structure of the microfluidic groove includes a straight line, an S shape, and a zigzag line.
可选的，所述转接板体TSV通孔内的侧壁金属化层和所述TSV通孔内的侧壁金属化层的材质均为金属，包括金、铜、钛和镍。Optionally, the sidewall metallization layer in the TSV through hole of the transition board body and the sidewall metallization layer in the TSV through hole are made of metal, including gold, copper, titanium and nickel.
可选的，所述键合层的材料包括金、铜、锡铅、锡银、锡银铜和有机树脂。Optionally, the material of the bonding layer includes gold, copper, tin-lead, tin-silver, tin-silver-copper and organic resin.
可选的，所述微流道凹槽层和所述TSV盖板层的材质一致，包括硅和玻璃。Optionally, the materials of the micro-channel groove layer and the TSV cover layer are the same, including silicon and glass.
本发明还提供了一种内嵌微流道的散热型TSV转接板的制作方法，包括：The present invention also provides a method for manufacturing a heat-dissipating TSV adapter plate with embedded micro-channels, including:
提供基板，在基板上通过刻蚀制作所需节距、深宽比的转接板体通孔和所需微流道形状、深宽比的微流道凹槽，微流道凹槽的深度不超过基板的厚度；Provide a substrate, on the substrate, make through-holes of the adapter plate with the required pitch and aspect ratio, and microchannel grooves with the required microchannel shape and aspect ratio, and the depth of the microchannel grooves. does not exceed the thickness of the substrate;
通过溅射工艺在转接板体通孔内的侧壁形成侧壁金属化层；Forming a sidewall metallization layer on the sidewall in the through hole of the adapter board by a sputtering process;
通过电镀、印刷、粘接工艺在转接板体通孔和微流道凹槽周边制作键合层；通过划片工艺截取得到独立的微流道凹槽层；By electroplating, printing and bonding process, bonding layer is made around the through hole of the adapter plate and the micro-channel groove; the independent micro-channel groove layer is obtained by scribing process;
重新提供基板，在基板上通过刻蚀制作所需节距、深宽比的TSV通孔和所需尺寸的微流体出入口；Re-provide the substrate, and make TSV through holes with the required pitch and aspect ratio and the microfluidic inlet and outlet of the required size on the substrate by etching;
通过溅射工艺在TSV通孔内的侧壁形成侧壁金属化层；Forming sidewall metallization layers on the sidewalls in the TSV vias by a sputtering process;
通过电镀、印刷、粘接工艺在TSV通孔和微流体出入口周边制作键合层；通过划片工艺截取得到独立的TSV盖板层；Through electroplating, printing and bonding processes, bonding layers are made around TSV through holes and microfluidic inlets and outlets; independent TSV cover layers are obtained by dicing process;
通过热压焊、回流焊、胶粘接工艺，将所述微流道凹槽层与所述TSV盖板层通过键合层完成上下两层键合，得到散热型TSV转接板。Through thermocompression welding, reflow soldering, and adhesive bonding processes, the micro-channel groove layer and the TSV cover layer are bonded to the upper and lower layers through the bonding layer to obtain a heat-dissipating TSV adapter board.
在本发明中提供了一种内嵌微流道的散热型TSV转接板及其制作方法，包括微流道凹槽层和TSV盖板层，所述微流道凹槽层和所述TSV盖板层通过键合层连接。所述微流道凹槽层包括通过刻蚀形成的微流道凹槽和转接板体通孔，所述转接板体通孔内设有侧壁金属化层；所述TSV盖板层包括通过刻蚀形成的微流体出入口和TSV通孔，所述TSV通孔内设有侧壁金属化层。本发明将具有微流道凹槽的微流道凹槽层与具有微流体出入口的TSV盖板层通过键合层连接，形成内部嵌入微流道结构的新型散热型TSV转接板，弥补传统TSV转接板受散热能力限制的不足，赋予转接板的主动散热能力，有效提升转接板的散热水平，可满足高功率密度的三维系统级封装的应用需求；转接板体通孔和TSV通孔采用侧壁金属化层及键合层实现电连接，避免传统电镀填充式TSV连接方式的良率低、工艺复杂等缺点，具有良率高、工艺简化等优势。The present invention provides a heat-dissipating TSV adapter plate with embedded micro-channels and a manufacturing method thereof, comprising a micro-channel groove layer and a TSV cover plate layer, the micro-channel groove layer and the TSV The cover layers are connected by bonding layers. The micro-channel groove layer includes a micro-channel groove formed by etching and a through hole of the adapter plate body, and the through hole of the adapter plate body is provided with a sidewall metallization layer; the TSV cover plate layer It includes a microfluidic inlet and outlet formed by etching and a TSV through hole, and the TSV through hole is provided with a sidewall metallization layer. The invention connects the micro-channel groove layer with micro-channel groove and the TSV cover plate layer with micro-fluid inlet and outlet through the bonding layer to form a new heat-dissipating TSV adapter plate with a micro-channel structure embedded inside, which makes up for the traditional The TSV adapter board is limited by the heat dissipation capacity, and endows the adapter board with active heat dissipation capability, which effectively improves the heat dissipation level of the adapter board and can meet the application requirements of high-power density 3D system-in-package; TSV vias use sidewall metallization layers and bonding layers to achieve electrical connection, avoiding the shortcomings of traditional electroplating and filling TSV connection methods such as low yield and complex process, and have the advantages of high yield and simplified process.
附图说明Description of drawings
图1是本发明提供的内嵌微流道的散热型TSV转接板结构示意图；1 is a schematic structural diagram of a heat-dissipating TSV adapter plate with embedded micro-channels provided by the present invention;
图2是在基板上制作转接板体通孔和微流道凹槽的示意图；Fig. 2 is the schematic diagram of making the through hole of the adapter plate body and the micro-channel groove on the substrate;
图3是在转接板体通孔内形成侧壁金属化层的示意图；3 is a schematic diagram of forming a sidewall metallization layer in a through hole of an adapter plate body;
图4是在转接板体通孔和微流道凹槽周边制作键合层并截取得到独立的微流道凹槽层的示意图；Fig. 4 is a schematic diagram of forming a bonding layer around the through hole of the adapter plate body and the micro-channel groove and intercepting to obtain an independent micro-channel groove layer;
图5在基板上制作TSV通孔和微流体出入口的示意图；Figure 5 is a schematic diagram of making TSV through holes and microfluidic inlets and outlets on a substrate;
图6是在TSV通孔内形成侧壁金属化层的示意图；6 is a schematic diagram of forming sidewall metallization in a TSV via;
图7是在TSV通孔和微流体出入口周边制作键合层并截取得到独立的TSV盖板层的示意图。FIG. 7 is a schematic diagram of forming a bonding layer around the TSV through hole and the microfluidic inlet and outlet, and intercepting to obtain an independent TSV cover layer.
具体实施方式Detailed ways
以下结合附图和具体实施例对本发明提出的一种内嵌微流道的散热型TSV转接板及其制作方法作进一步详细说明。根据下面说明和权利要求书，本发明的优点和特征将更清楚。需说明的是，附图均采用非常简化的形式且均使用非精准的比例，仅用以方便、明晰地辅助说明本发明实施例的目的。A heat dissipation TSV adapter plate with embedded micro-channels and a manufacturing method thereof provided by the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. The advantages and features of the present invention will become apparent from the following description and claims. It should be noted that, the accompanying drawings are all in a very simplified form and in inaccurate scales, and are only used to facilitate and clearly assist the purpose of explaining the embodiments of the present invention.
实施例一Example 1
本发明提供了一种内嵌微流道的散热型TSV转接板，包括微流道凹槽层和TSV盖板层，两者材料一致，为硅或玻璃。如图1所示，所述微流道凹槽层包括通过刻蚀形成的微流道凹槽12和转接板体通孔11，所述转接板体通孔11内设有侧壁金属化层13；所述微流道凹槽12的结构包括直线型、S型和折线型；所述TSV盖板层包括通过刻蚀形成的微流体出入口22和TSV通孔21，所述TSV通孔21内设有侧壁金属化层23。所述侧壁金属化层13和所述侧壁金属化层23的材质均为金属，可以为金、铜、钛和镍等材料。The invention provides a heat-dissipating TSV adapter plate with embedded micro-channels, comprising a micro-channel groove layer and a TSV cover plate layer, which are made of the same materials as silicon or glass. As shown in FIG. 1 , the micro-channel groove layer includes a
请参阅图1，所述微流道凹槽12和所述转接板体通孔11周边形成有键合层14，微流体出入口22和TSV通孔21周边形成有键合层24，所述键合层14和键合层24的材料可以金、铜、锡铅、锡银、锡银铜和有机树脂等材料。所述微流道凹槽层和所述TSV盖板层通过键合层（包括键合层14和键合层24）连接。Referring to FIG. 1 , a
本发明通过将具有高效主动散热功能的微流道凹槽埋入在TSV转接板内，有效增加了TSV转接板的散热能力，从而满足高功率密度三维微电子系统封装散热需求。The invention effectively increases the heat dissipation capability of the TSV adapter plate by burying the micro-channel grooves with efficient and active heat dissipation function in the TSV adapter plate, thereby meeting the heat dissipation requirements of the high-power density three-dimensional microelectronic system package.
实施例二
本发明实施例二提供了一种内嵌微流道的散热型TSV转接板的制作方法，包括如下步骤：The second embodiment of the present invention provides a method for manufacturing a heat-dissipating TSV adapter board with embedded micro-channels, including the following steps:
提供基板A，所述基板A的材料可以为硅、玻璃或其他材料；通过两次常规刻蚀工艺，在基板A上分别制作所需节距、深宽比的转接板体通孔11和所需微流道形状、深宽比的微流道凹槽12，如图2所示；两次刻蚀工艺顺序不限，所述微流道凹槽12的深度不超过基板A的厚度；所述微流道凹槽12包括直线型、S型、折线型等结构；A substrate A is provided, and the material of the substrate A can be silicon, glass or other materials; through two conventional etching processes, the through
通过溅射工艺在转接板体通孔11内的侧壁形成侧壁金属化层13，如图3所示；侧壁金属化层13的厚度根据信号互连设计要求确定，所述侧壁金属化层13的材料可以为钛、镍、金、铜等金属材料；The
通过电镀、印刷、粘接工艺在转接板体通孔11和微流道凹槽12周边制作键合层14；通过划片工艺截取得到独立的微流道凹槽层1，如图4所示；所述键合层14的厚度根据其材料、键合工艺及产品要求而定，所述键合层14的材料可以为金、铜、锡铅、锡银、有机树脂等材料；The
重新提供基板B，所述基板B的材料可以为硅、玻璃或其他材料；在基板B上通过刻蚀制作所需节距、深宽比的TSV通孔21和所需尺寸的微流体出入口22，如图5所示；Re-provide substrate B, the material of which can be silicon, glass or other materials; make TSV through
通过溅射工艺在TSV通孔21内的侧壁形成侧壁金属化层23，如图6所示；所述侧壁金属化层23的厚度根据信号互连设计要求确定，所述侧壁金属化层23的材料可以为钛、镍、金、铜等金属材料；A
通过电镀、印刷、粘接工艺在TSV通孔21和微流体出入口22周边制作键合层24；通过划片工艺截取得到独立的TSV盖板层2，如图7所示；The
通过热压焊、回流焊、胶粘接工艺，将如图4所示的微流道凹槽层与如图7所示的TSV盖板层通过键合层（包括键合层14和键合层24）完成上下两层键合，得到如图1所示的散热型TSV转接板。Through thermocompression soldering, reflow soldering, and adhesive bonding processes, the microchannel groove layer shown in FIG. 4 and the TSV cover plate layer shown in FIG. 7 are passed through the bonding layer (including the
上述描述仅是对本发明较佳实施例的描述，并非对本发明范围的任何限定，本发明领域的普通技术人员根据上述揭示内容做的任何变更、修饰，均属于权利要求书的保护范围。The above description is only a description of the preferred embodiments of the present invention, and is not intended to limit the scope of the present invention. Any changes and modifications made by those of ordinary skill in the field of the present invention based on the above disclosure all belong to the protection scope of the claims.
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| CN117299351A (en)* | 2023-05-26 | 2023-12-29 | 天津华科泰生物技术有限公司 | Microchannel and preparation method and application thereof |
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