CN111540814A - An LED epitaxial growth method for improving quantum efficiency - Google Patents

Abstract

Translated fromChinese

本申请公开了一种提升量子效率的LED外延生长方法，依次包括：处理衬底、生长低温GaN缓冲层、生长不掺杂GaN层、生长掺杂Si的N型GaN层、生长多量子阱层、生长AlGaN电子阻挡层、生长掺杂Mg的P型GaN层和降温冷却，其中生长多量子阱层依次包括生长InGaN阱层、生长低温Mg陡峭掺杂AlGaInN层、生长高温不掺杂AlGaInN层和生长GaN垒层的步骤。本发明方法解决现有LED外延生长方法中存在的电子泄露引起的量子效率出现坍塌问题，从而提高LED的发光效率，降低工作电压，减少波长漂移。

The present application discloses an LED epitaxial growth method for improving quantum efficiency, which sequentially includes: processing a substrate, growing a low-temperature GaN buffer layer, growing an undoped GaN layer, growing a Si-doped N-type GaN layer, and growing a multiple quantum well layer , growing an AlGaN electron blocking layer, growing a Mg-doped P-type GaN layer and cooling down, wherein growing a multiple quantum well layer sequentially includes growing an InGaN well layer, growing a low-temperature Mg steeply doped AlGaInN layer, growing a high-temperature undoped AlGaInN layer and The step of growing the GaN barrier layer. The method of the invention solves the problem of collapse of quantum efficiency caused by electron leakage in the existing LED epitaxial growth method, thereby improving the luminous efficiency of the LED, reducing the working voltage and reducing the wavelength drift.

Description

Translated fromChinese

一种提升量子效率的LED外延生长方法An LED epitaxial growth method for improving quantum efficiency

技术领域technical field

本发明属于LED技术领域，具体涉及一种提升量子效率的LED外延生长方法。The invention belongs to the technical field of LEDs, and in particular relates to an LED epitaxial growth method for improving quantum efficiency.

背景技术Background technique

发光二极管(Light-Emitting Diode，LED)是一种将电能转化为光能的半导体电子器件。当电流流过时，电子与空穴在其量子阱内复合而发出单色光。LED作为一种高效、环保、绿色新型固态照明光源，具有低电压、低功耗、体积小、重量轻、寿命长、高可靠性、色彩丰富等优点。目前国内生产LED的规模正在逐步扩大，但是LED仍然存在发光效率低下的问题，影响LED的节能效果。Light-Emitting Diode (LED) is a semiconductor electronic device that converts electrical energy into light energy. When current flows, electrons and holes recombine within their quantum wells to emit monochromatic light. As a high-efficiency, environmentally friendly and green new solid-state lighting source, LED has the advantages of low voltage, low power consumption, small size, light weight, long life, high reliability, and rich colors. At present, the scale of domestic LED production is gradually expanding, but LED still has the problem of low luminous efficiency, which affects the energy-saving effect of LED.

目前传统的LED外延InGaN/GaN多量子阱层生长方法中，InGaN/GaN量子阱中电子容易泄露，致使量子效率出现坍塌现象，发光区辐射效率低下，导致LED发光效率不高，影响LED的节能效果。In the current traditional LED epitaxial InGaN/GaN multi-quantum well layer growth method, the electrons in the InGaN/GaN quantum wells are easily leaked, resulting in the collapse of the quantum efficiency and the low radiation efficiency of the light-emitting region, resulting in low LED luminous efficiency and affecting the energy saving of LEDs. Effect.

因此，提供一种提升量子效率的LED外延生长方法，解决现有LED多量子阱层中存在的电子泄露引起的量子效率出现坍塌问题，从而提高LED的发光效率，是本技术领域亟待解决的技术问题。Therefore, to provide an LED epitaxial growth method for improving quantum efficiency, to solve the problem of quantum efficiency collapse caused by electron leakage existing in the existing LED multi-quantum well layer, so as to improve the luminous efficiency of LED, which is an urgent technology to be solved in this technical field. question.

发明内容SUMMARY OF THE INVENTION

本发明通过采用新的多量子阱层生长方法来解决现有LED外延生长方法中存在的电子泄露引起的量子效率出现坍塌问题，从而提高LED的发光效率，降低工作电压，减少波长漂移。The invention solves the problem of quantum efficiency collapse caused by electron leakage in the existing LED epitaxial growth method by adopting a new multi-quantum well layer growth method, thereby improving the luminous efficiency of the LED, reducing the working voltage and reducing the wavelength drift.

本发明的LED外延生长方法，依次包括：处理衬底、生长低温GaN缓冲层、生长不掺杂GaN层、生长掺杂Si的N型GaN层、生长多量子阱层、生长AlGaN电子阻挡层、生长掺杂Mg的P型GaN层和降温冷却；所述生长多量子阱层依次包括：生长InGaN阱层、生长低温Mg陡峭掺杂AlGaInN层、生长高温不掺杂AlGaInN层和生长GaN垒层，具体为：The LED epitaxial growth method of the present invention sequentially includes: processing a substrate, growing a low-temperature GaN buffer layer, growing an undoped GaN layer, growing a Si-doped N-type GaN layer, growing a multiple quantum well layer, growing an AlGaN electron blocking layer, growing a Mg-doped P-type GaN layer and cooling down; the growing multiple quantum well layer sequentially includes: growing an InGaN well layer, growing a low-temperature Mg steeply doped AlGaInN layer, growing a high-temperature undoped AlGaInN layer, and growing a GaN barrier layer, Specifically:

A、将反应腔压力控制在200-280mbar，反应腔温度控制在900-950℃，通入流量为50000sccm-70000sccm的NH₃、20sccm-40sccm的TMGa、10000-15000sccm的TMIn及100L/min-130L/min的N₂，生长厚度为3nm的InGaN阱层；A. The pressure of the reaction chamber is controlled at 200-280mbar, the temperature of the reaction chamber is controlled at 900-950℃, and the flow rate is 50000sccm-70000sccm NH₃ , 20sccm-40sccm TMGa, 10000-15000sccm TMIn and 100L/min-130L /min of N₂ to grow an InGaN well layer with a thickness of 3 nm;

B、保持反应腔压力不变，降低反应腔温度至450-520℃，通入160-180sccm的NH₃、500-600sccm的TMAl、300sccm-400sccm的TMGa、100L/min-130L/min的N₂以及1300-1400sccm的TMIn以及Cp₂Mg，生长过程中Mg掺杂浓度先以每秒增加4E+16atoms/cm³，从4E+19atoms/cm³线性渐变增加至6E+19atoms/cm³，再以每秒增加9E+18atoms/cm³，从6E+19atoms/cm³线性渐变增加至6E+21atoms/cm³，生长厚度为15nm-20nm的低温Mg陡峭掺杂AlGaInN层；B. Keep the pressure of the reaction chamber unchanged, reduce the temperature of the reaction chamber to 450-520 ℃, and feed NH₃ of 160-180 sccm, TMAl of 500-600 sccm, TMGa of 300-400 sccm, and N₂ of 100-130 L/min and 1300-1400sccm of TMIn and Cp₂ Mg. During the growth process, the Mg doping concentration first increased by 4E+16atoms/cm³ per second, linearly increased from 4E+19 atoms/cm³ to 6E+19 atoms/cm³ , and then increased by 4E+16 atoms/cm 3 per second. Increase 9E+18atoms/cm³ per second, linearly increase from 6E+19 atoms/cm³ to 6E+21 atoms/cm³ , grow a low-temperature Mg steeply doped AlGaInN layer with a thickness of 15nm-20nm;

C、保持反应腔压力不变，升高反应腔温度至950-1000℃，通入160-180sccm的NH₃、500-600sccm的TMAl、300sccm-400sccm的TMGa、100L/min-130L/min的N₂以及1300-1400sccm的TMIn，生长厚度为15nm-20nm的高温不掺杂AlGaInN层；C. Keep the pressure of the reaction chamber unchanged, increase the temperature of the reaction chamber to 950-1000 ℃, and feed NH₃ of 160-180 sccm, TMAl of 500-600 sccm, TMGa of 300-400 sccm, and N of 100-130 L/min.₂ and 1300-1400sccm TMIn, the growth thickness is 15nm-20nm high temperature undoped AlGaInN layer;

D、降低温度至800℃，保持反应腔压力300mbar-400mbar，通入流量为30000sccm-40000sccm的NH₃、20sccm-60sccm的TMGa及100L/min-130L/min的N₂，生长10nm的GaN垒层；D. Lower the temperature to 800°C, keep the pressure of the reaction chamber at 300mbar-400mbar, pass in NH₃ with a flow rate of 30,000 sccm-40,000 sccm, TMGa with a flow rate of 20 sccm-60 sccm and N₂ with a flow rate of 100 L/min-130 L/min, and grow a GaN barrier layer of 10 nm. ;

重复上述步骤A-D，周期性依次生长InGaN阱层、低温Mg陡峭掺杂AlGaInN层、高温不掺杂AlGaInN层和GaN垒层，生长周期数为3-8个。The above steps A-D are repeated to periodically grow an InGaN well layer, a low-temperature Mg steeply doped AlGaInN layer, a high-temperature undoped AlGaInN layer and a GaN barrier layer, and the number of growth cycles is 3-8.

优选地，所述处理衬底的具体过程为：Preferably, the specific process of processing the substrate is:

在1000℃-1100℃的温度下，通入100L/min-130L/min的H₂，保持反应腔压力100mbar-300mbar，处理蓝宝石衬底5min-10min。At a temperature of 1000°C-1100°C, 100L/min-130L/min of H₂ is introduced, and the pressure of the reaction chamber is maintained at 100mbar-300mbar, and the sapphire substrate is processed for 5min-10min.

优选地，所述生长低温GaN缓冲层的具体过程为：Preferably, the specific process of growing the low temperature GaN buffer layer is:

降温至500℃-600℃，保持反应腔压力300mbar-600mbar，通入流量为10000sccm-20000sccm的NH₃、50sccm-100sccm的TMGa及100L/min-130L/min的H₂，在蓝宝石衬底上生长厚度为20nm-40nm的低温GaN缓冲层；Cool down to 500℃-600℃, keep the pressure of the reaction chamber at 300mbar-600mbar, pass NH₃ of 10000sccm-20000sccm, TMGa of 50sccm-100sccm and H₂ of 100L/min-130L/min, and grow on sapphire substrate Low temperature GaN buffer layer with a thickness of 20nm-40nm;

升高温度到1000℃-1100℃，保持反应腔压力300mbar-600mbar，通入流量为30000sccm-40000sccm的NH₃、100L/min-130L/min的H₂，保温300s-500s，将低温GaN缓冲层腐蚀成不规则岛形。Raise the temperature to 1000℃-1100℃, keep the pressure of the reaction chamber at 300mbar-600mbar, pass in NH₃ with a flow rate of 30000sccm-40000sccm, and H₂ with a flow rate of 100L/min-130L/min, keep the temperature for 300s-500s, and put the low-temperature GaN buffer layer Corroded into irregular islands.

优选地，所述生长不掺杂GaN层的具体过程为：Preferably, the specific process of growing the undoped GaN layer is:

升高温度到1000℃-1200℃，保持反应腔压力300mbar-600mbar，通入流量为30000sccm-40000sccm的NH₃、200sccm-400sccm的TMGa及100L/min-130L/min的H₂，持续生长2μm-4μm的不掺杂GaN层。Raise the temperature to 1000℃-1200℃, keep the pressure of the reaction chamber at 300mbar-600mbar, pass in NH₃ with a flow rate of 30000sccm-40000sccm, TMGa at 200sccm-400sccm and H₂ at 100L/min-130L/min, and continue to grow 2μm- 4μm undoped GaN layer.

优选地，所述生长掺杂GaN层的具体过程为：Preferably, the specific process of growing the doped GaN layer is:

保持反应腔压力300mbar-600mbar，保持温度1000℃-1200℃，通入流量为30000sccm-60000sccm的NH₃、200sccm-400sccm的TMGa、100L/min-130L/min的H₂及20sccm-50sccm的SiH₄，持续生长3μm-4μm掺杂Si的N型GaN，其中，Si掺杂浓度5E18atoms/cm³-1E19atoms/cm³。Keep the pressure of the reaction chamber at 300mbar-600mbar, keep the temperature at 1000℃-1200℃, and pass in the flow rate of_NH3 of 30000sccm-60000sccm, TMGa of 200sccm-400sccm,_H2 of 100L/min-130L/min and_SiH4 of 20sccm-50sccm , continue to grow 3μm-4μm Si-doped N-type GaN, wherein the Si doping concentration is 5E18atoms/cm³ -1E19 atoms/cm³ .

优选地，所述生长AlGaN电子阻挡层的具体过程为：Preferably, the specific process of growing the AlGaN electron blocking layer is:

在温度为900-950℃，反应腔压力为200-400mbar，通入50000-70000sccm的NH₃、30-60sccm的TMGa、100-130L/min的H₂、100-130sccm的TMAl、1000-1300sccm的Cp₂Mg的条件下，生长所述AlGaN电子阻挡层，所述AlGaN层的厚度为40-60nm，其中，Mg掺杂的浓度为1E19atoms/cm³-1E20atoms/cm³。At the temperature of 900-950℃, the pressure of the reaction chamber is 200-400mbar, 50000-70000sccm of NH₃ , 30-60 sccm of TMGa, 100-130 L/min of H₂ , 100-130 sccm of TMAl, 1000-1300 sccm of H2 The AlGaN electron blocking layer is grown under the condition of Cp₂ Mg, the thickness of the AlGaN layer is 40-60 nm, and the concentration of Mg doping is 1E19 atoms/cm³ -1E20 atoms/cm³ .

优选地，所述生长掺Mg的P型GaN层的具体过程为：Preferably, the specific process of growing the Mg-doped P-type GaN layer is:

保持反应腔压力400mbar-900mbar、温度950℃-1000℃，通入流量为50000sccm-70000sccm的NH₃、20sccm-100sccm的TMGa、100L/min-130L/min的H₂及1000sccm-3000sccm的Cp₂Mg，持续生长50nm-200nm的掺Mg的P型GaN层，其中，Mg掺杂浓度1E19atoms/cm³-1E20atoms/cm³。Keep the pressure of the reaction chamber at 400mbar-900mbar, the temperature at 950℃-1000℃, and the flow rate is 50000sccm-70000sccm NH₃ , 20sccm-100sccm TMGa, 100L/min-130L/min H₂ and 1000sccm-3000sccm Cp₂ Mg , the Mg-doped P-type GaN layer of 50 nm-200 nm is continuously grown, wherein the Mg doping concentration is 1E19 atoms/cm³ -1E20 atoms/cm³ .

优选地，所述降温冷却的具体过程为：Preferably, the specific process of cooling down is:

降温至650℃-680℃，保温20min-30min，关闭加热系统、关闭给气系统，随炉冷却。Cool down to 650℃-680℃, keep warm for 20min-30min, close the heating system, close the gas supply system, and cool with the furnace.

相比于传统的生长方法，本发明中的提升量子效率的LED外延生长方法达到了如下效果：Compared with the traditional growth method, the LED epitaxial growth method for improving quantum efficiency in the present invention achieves the following effects:

1、本发明通过在量子阱中引入低温Mg陡峭掺杂AlGaInN层结构，能够提供量子阱中的内建电场，从而削弱量子限制斯塔克效应，使量子阱能带在不同电流密度下波动更小，量子效率得到提高。在低温下，电子和空穴的迁移率提高，由于Mg的陡峭掺杂，增加的迁移率使得在低温时量子阱层的电阻增加，电子泄露出量子阱有源区的概率大大减少，通过Mg的陡峭掺杂可以缓解载流子泄露，从而解决LED器件的量子效率坍塌问题，LED发光效率得到提升。1. The present invention can provide a built-in electric field in the quantum well by introducing a low-temperature Mg steeply doped AlGaInN layer structure into the quantum well, thereby weakening the quantum confinement Stark effect and making the quantum well energy band fluctuate more under different current densities. small, the quantum efficiency is improved. At low temperature, the mobility of electrons and holes is improved. Due to the steep doping of Mg, the increased mobility makes the resistance of the quantum well layer increase at low temperature, and the probability of electrons leaking out of the quantum well active region is greatly reduced. The steep doping can alleviate carrier leakage, thereby solving the problem of quantum efficiency collapse of LED devices, and the luminous efficiency of LEDs is improved.

2、本发明通过在量子阱中先生长低温Mg陡峭掺杂AlGaInN层结构后再生长高温不掺杂AlGaInN层，使整个量子阱层形成了梯度的电容结构，可以达到限流作用，极大程度地减少了大电流密度下的发光衰减效应；并可以阻碍电荷径向移动，使电荷向四周扩散，即加强电流横向扩展能力，从而提高LED发光效率，并且正向驱动电压更低，波长漂移更小。2. In the present invention, by growing the low-temperature Mg steeply doped AlGaInN layer structure in the quantum well, and then growing the high-temperature undoped AlGaInN layer, the entire quantum well layer forms a gradient capacitance structure, which can achieve the current limiting effect and greatly increase the It can effectively reduce the luminous attenuation effect under high current density; and can hinder the radial movement of the charge, so that the charge diffuses to the surrounding, that is, strengthens the lateral expansion ability of the current, thereby improving the luminous efficiency of the LED, and the forward driving voltage is lower and the wavelength drift is more. Small.

附图说明Description of drawings

此处所说明的附图用来提供对本发明的进一步理解，构成本发明的一部分，本发明的示意性实施例及其说明用于解释本发明，并不构成对本发明的不当限定。在附图中：The accompanying drawings described herein are used to provide further understanding of the present invention and constitute a part of the present invention. The exemplary embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute an improper limitation of the present invention. In the attached image:

图1为本发明方法制备的LED外延的结构示意图；1 is a schematic structural diagram of the LED epitaxy prepared by the method of the present invention;

图2为现有传统方法制备的LED外延的结构示意图；2 is a schematic structural diagram of an LED epitaxy prepared by an existing traditional method;

其中，1、蓝宝石衬底，2、低温GaN缓冲层，3、不掺杂GaN层，4、N型GaN层，5、多量子阱层，6、AlGaN电子阻挡层，7、P型GaN层，51、InGaN阱层，52、低温Mg陡峭掺杂AlGaInN层，53、高温不掺杂AlGaInN层，54、GaN垒层。Among them, 1. Sapphire substrate, 2. Low temperature GaN buffer layer, 3. Undoped GaN layer, 4. N-type GaN layer, 5. Multiple quantum well layer, 6. AlGaN electron blocking layer, 7. P-type GaN layer , 51, InGaN well layer, 52, low temperature Mg steeply doped AlGaInN layer, 53, high temperature undoped AlGaInN layer, 54, GaN barrier layer.

具体实施方式Detailed ways

如在说明书及权利要求当中使用了某些词汇来指称特定组件。本领域技术人员应可理解，硬件制造商可能会用不同名词来称呼同一个组件。本说明书及权利要求并不以名称的差异来作为区分组件的方式，而是以组件在功能上的差异来作为区分的准则。如在通篇说明书及权利要求当中所提及的“包含”为一开放式用语，故应解释成“包含但不限定于”。“大致”是指在可接收的误差范围内，本领域技术人员能够在一定误差范围内解决所述技术问题，基本达到所述技术效果。说明书后续描述为实施本申请的较佳实施方式，然所述描述乃以说明本申请的一般原则为目的，并非用以限定本申请的范围。本申请的保护范围当视所附权利要求所界定者为准。As used in the specification and claims, certain terms are used to refer to particular components. It should be understood by those skilled in the art that hardware manufacturers may refer to the same component by different nouns. The description and claims do not use the difference in name as a way to distinguish components, but use the difference in function of the components as a criterion for distinguishing. As mentioned in the entire specification and claims, "comprising" is an open-ended term, so it should be interpreted as "including but not limited to". "Approximately" means that within an acceptable error range, those skilled in the art can solve the technical problem within a certain error range, and basically achieve the technical effect. Subsequent descriptions in the specification are preferred embodiments for implementing the present application, however, the descriptions are for the purpose of illustrating the general principles of the present application and are not intended to limit the scope of the present application. The scope of protection of this application should be determined by the appended claims.

另外，本说明书并没有将权利要求书公开的构件和方法步骤限定于实施方式的构件和方法步骤。特别是，在实施方式中记载的结构部件的尺寸、材质、形状、其结构顺序和邻接顺序以及制造方法等只要没有具体的限定，就仅作为说明例，而不是将本发明的范围限定于此。附图中所示的结构部件的大小和位置关系是为了清楚地进行说明而放大示出。In addition, the present specification does not limit the components and method steps disclosed in the claims to the components and method steps of the embodiments. In particular, the dimensions, materials, shapes, structural order, adjoining order, and manufacturing methods of the components described in the embodiments are merely illustrative examples, and do not limit the scope of the present invention, unless otherwise specified. . The size and positional relationship of the structural components shown in the drawings are exaggerated for clarity of explanation.

以下结合附图对本申请作进一步详细说明，但不作为对本申请的限定。The present application will be described in further detail below with reference to the accompanying drawings, but it is not intended to limit the present application.

实施例1Example 1

本实施例采用本发明提供的提升量子效率的LED外延生长方法，采用MOCVD来生长GaN基LED外延片，采用高纯H₂或高纯N₂或高纯H₂和高纯N₂的混合气体作为载气，高纯NH₃作为N源，金属有机源三甲基镓(TMGa)作为镓源，三甲基铟(TMIn)作为铟源，N型掺杂剂为硅烷(SiH₄)，三甲基铝(TMAl)作为铝源，P型掺杂剂为二茂镁(CP₂Mg)，反应压力在70mbar到900mbar之间。具体生长方式如下(外延结构请参考图1)：This embodiment adopts the LED epitaxial growth method for improving quantum efficiency provided by the present invention, adopts MOCVD to grow GaN-based LED epitaxial wafers, adopts high-purity H₂ or high-purity N₂ or a mixed gas of high-purity H₂ and high-purity N₂ As carrier gas, high-purity NH₃ is used as N source, metal organic source trimethyl gallium (TMGa) is used as gallium source, trimethyl indium (TMIn) is used as indium source, N-type dopant is silane (SiH₄ ), three Methylaluminum (TMAl) was used as the aluminum source, the P-type dopant was magnesium dimethylocene (CP₂ Mg), and the reaction pressure was between 70 mbar and 900 mbar. The specific growth method is as follows (for the epitaxial structure, please refer to Figure 1):

一种提升量子效率的LED外延生长方法，依次包括：处理蓝宝石衬底1、生长低温GaN缓冲层2、生长不掺杂GaN层3、生长掺杂Si的N型GaN层4、生长多量子阱层5、生长AlGaN电子阻挡层6、生长掺杂Mg的P型GaN层7和降温冷却；其中，An LED epitaxial growth method for improving quantum efficiency, which sequentially includes: processing asapphire substrate 1, growing a low-temperatureGaN buffer layer 2, growing anundoped GaN layer 3, growing a Si-doped N-type GaN layer 4, growing a multiplequantum well layer 5, growing an AlGaNelectron blocking layer 6, growing a Mg-doped P-type GaN layer 7, and cooling down; wherein,

步骤1：处理蓝宝石衬底1。Step 1: Processing thesapphire substrate 1 .

具体地，所述步骤1，进一步为：Specifically, thestep 1 is further:

在温度为1000-1100℃，反应腔压力为100-300mbar，通入100-130L/min的H₂的条件下，处理蓝宝石衬底5-10分钟。The sapphire substrate is treated for 5-10 minutes under the conditions that the temperature is 1000-1100° C., the pressure of the reaction chamber is 100-300 mbar, and 100-130 L/min of H₂ is introduced.

步骤2：生长低温GaN缓冲层2，并在所述低温GaN缓冲层2形成不规则小岛。Step 2: growing a low temperatureGaN buffer layer 2, and forming irregular islands in the low temperatureGaN buffer layer 2.

具体地，所述步骤2，进一步为：Specifically, thestep 2 is further:

在温度为500-600℃，反应腔压力为300-600mbar，通入10000-20000sccm的NH₃、50-100sccm的TMGa、100-130L/min的H₂的条件下，在所述蓝宝石衬底上生长所述低温GaN缓冲层2，所述低温GaN缓冲层2的厚度为20-40nm；On the sapphire substrate, the temperature is 500-600 ℃, the pressure of the reaction chamber is 300-600 mbar, NH₃ of 10,000-20,000 sccm, TMGa of 50-100 sccm, and H₂ of 100-130 L/min are fed into the sapphire substrate. growing the low temperatureGaN buffer layer 2, the thickness of the low temperatureGaN buffer layer 2 is 20-40nm;

在温度为1000-1100℃、反应腔压力为300-600mbar，通入30000-40000sccm的NH₃、100L/min-130L/min的H₂的条件下，在所述低温GaN缓冲层2上形成所述不规则小岛。Under the conditions of a temperature of 1000-1100° C., a reaction chamber pressure of 300-600 mbar, NH₃ of 30,000-40,000 sccm, and H₂ of 100L/min-130L/min, the low-temperatureGaN buffer layer 2 is formed on the low-temperatureGaN buffer layer 2 . Describe the irregular island.

步骤3：生长不掺杂GaN层3。Step 3: Growth ofundoped GaN layer 3 .

具体地，所述步骤3，进一步为：Specifically, thestep 3 is further:

在温度为1000-1200℃，反应腔压力为300-600mbar，通入30000-40000sccm的NH₃、200-400sccm的TMGa、100-130L/min的H₂的条件下，生长的所述不掺杂GaN层3；所述不掺杂GaN层3的厚度为2-4μm。Under the conditions that the temperature is 1000-1200 ℃, the pressure of the reaction chamber is 300-600 mbar, NH₃ of 30,000-40,000 sccm, TMGa of 200-400 sccm, and H₂ of 100-130 L/min are fed into theundoped GaN layer 3; the thickness of theundoped GaN layer 3 is 2-4 μm.

步骤4：生长Si掺杂的N型GaN层4。Step 4: Growth of Si-doped N-type GaN layer 4 .

具体地，所述步骤4，进一步为：Specifically, thestep 4 is further:

保持反应腔压力300mbar-600mbar，保持温度1000℃-1200℃，通入流量为30000sccm-60000sccm的NH₃、200sccm-400sccm的TMGa、100L/min-130L/min的H₂及20sccm-50sccm的SiH₄，持续生长3μm-4μm掺杂Si的N型GaN层4，其中，Si掺杂浓度5E18atoms/cm³-1E19atoms/cm³。Keep the pressure of the reaction chamber at 300mbar-600mbar, keep the temperature at 1000℃-1200℃, and pass in the flow rate of_NH3 of 30000sccm-60000sccm, TMGa of 200sccm-400sccm,_H2 of 100L/min-130L/min and_SiH4 of 20sccm-50sccm , the N-type GaN layer 4 doped with Si of 3 μm-4 μm is continuously grown, wherein the Si doping concentration is 5E18 atoms/cm³ -1E19 atoms/cm³ .

步骤5：生长多量子阱层5。Step 5: Growing the multiplequantum well layer 5 .

所述生长多量子阱层5，进一步为：The described growth multiplequantum well layer 5 is further:

(1)将反应腔压力控制在200-280mbar，反应腔温度控制在900-950℃，通入流量为50000sccm-70000sccm的NH₃、20sccm-40sccm的TMGa、10000-15000sccm的TMIn及100L/min-130L/min的N₂，生长厚度为3nm的InGaN阱层51；(2)保持反应腔压力不变，降低反应腔温度至450-520℃，通入160-180sccm的NH₃、500-600sccm的TMAl、300sccm-400sccm的TMGa、100L/min-130L/min的N₂以及1300-1400sccm的TMIn以及Cp₂Mg，生长过程中Mg掺杂浓度先以每秒增加4E+16atoms/cm³，从4E+19atoms/cm³线性渐变增加至6E+19atoms/cm³，再以每秒增加9E+18atoms/cm³，从6E+19atoms/cm³线性渐变增加至6E+21atoms/cm³，生长厚度为15nm-20nm的低温Mg陡峭掺杂AlGaInN层52；(3)保持反应腔压力不变，升高反应腔温度至950-1000℃，通入160-180sccm的NH₃、500-600sccm的TMAl、300sccm-400sccm的TMGa、100L/min-130L/min的N₂以及1300-1400sccm的TMIn，生长厚度为15nm-20nm的高温不掺杂AlGaInN层53；(4)降低温度至800℃，保持反应腔压力300mbar-400mbar，通入流量为30000sccm-40000sccm的NH₃、20sccm-60sccm的TMGa及100L/min-130L/min的N₂，生长10nm的GaN垒层54；(1) The pressure of the reaction chamber is controlled at 200-280mbar, the temperature of the reaction chamber is controlled at 900-950℃, and the flow rate is 50000sccm-70000sccm NH₃ , 20sccm-40sccm TMGa, 10000-15000sccm TMIn and 100L/min- 130L/min of N₂ to grow the InGaN well layer 51 with a thickness of 3nm; (2) Keep the pressure of the reaction chamber unchanged, lower the temperature of the reaction chamber to 450-520 ℃, and feed 160-180 sccm of NH₃ , 500-600 sccm ofNH 3 TMAl, TMGa of 300sccm-400sccm, N₂ of 100L/min-130L/min, TMIn of 1300-1400sccm and Cp₂ Mg. During the growth process, the Mg doping concentration is first increased by 4E+16atoms/cm³ per second, from 4E +19atoms/cm³ linearly increased to 6E+19atoms/cm³ , then increased by 9E+18atoms/cm³ per second, linearly increased from 6E+19atoms/cm³ to 6E+21atoms/cm³ , the growth thickness is 15nm -20nm low-temperature Mg steeply dopedAlGaInN layer 52; (3) Keep the pressure of the reaction chamber unchanged, increase the temperature of the reaction chamber to 950-1000 ℃, pass NH₃ of 160-180 sccm, TMAl of 500-600 sccm, 300 sccm- TMGa of 400sccm,_N2 of 100L/min-130L/min, and TMIn of 1300-1400sccm, grow a high-temperature undoped AlGaInN layer 53 with a thickness of 15nm-20nm; (4) Lower the temperature to 800°C and keep the reaction chamber pressure at 300mbar -400mbar, the flow rate is 30000sccm-40000sccm_NH3 , 20sccm-60sccm TMGa and 100L/min-130L/min_N2 , grow 10nmGaN barrier layer 54;

重复上述步骤A-D，周期性依次生长InGaN阱层51、低温Mg陡峭掺杂AlGaInN层52、高温不掺杂AlGaInN层53和GaN垒层54，生长周期数为3-8个。The above steps A-D are repeated, and the InGaN welllayer 51, the low-temperature Mg steeply dopedAlGaInN layer 52, the high-temperature undoped AlGaInN layer 53 and theGaN barrier layer 54 are periodically grown sequentially, and the number of growth cycles is 3-8.

具体地，所述步骤6，进一步为：Specifically, thestep 6 is further:

在温度为900-950℃，反应腔压力为200-400mbar，通入50000-70000sccm的NH₃、30-60sccm的TMGa、100-130L/min的H₂、100-130sccm的TMAl、1000-1300sccm的Cp₂Mg的条件下，生长所述AlGaN电子阻挡层6，所述AlGaN层6的厚度为40-60nm，其中，Mg掺杂的浓度为1E19atoms/cm³-1E20atoms/cm³。At the temperature of 900-950℃, the pressure of the reaction chamber is 200-400mbar, 50000-70000sccm of_NH3 , 30-60sccm of TMGa, 100-130L/min of_H2 , 100-130sccm of TMAl, 1000-1300sccm of The AlGaNelectron blocking layer 6 is grown under the condition of Cp₂ Mg, the thickness of theAlGaN layer 6 is 40-60 nm, and the concentration of Mg doping is 1E19 atoms/cm³ -1E20 atoms/cm³ .

步骤7：生长Mg掺杂的P型GaN层7。Step 7: Growth of Mg-doped P-type GaN layer 7 .

具体地，所述步骤7，进一步为：Specifically, thestep 7 is further:

在温度为950-1000℃，反应腔压力为400-900mbar，通入50000-70000sccm的NH₃、20-100sccm的TMGa、100-130L/min的H₂、1000-3000sccm的Cp₂Mg的条件下，生长厚度为50-200nm的Mg掺杂P型GaN层7，Mg掺杂浓度1E19atoms/cm³-1E20atoms/cm³。Under the conditions that the temperature is 950-1000 ℃, the pressure of the reaction chamber is 400-900 mbar, 50000-70000 sccm of NH₃ , 20-100 sccm of TMGa, 100-130 L/min of H₂ , 1000-3000 sccm of Cp₂ Mg are introduced , a Mg-doped P-type GaN layer 7 with a thickness of 50-200 nm is grown, and the Mg-doped concentration is 1E19 atoms/cm³ -1E20 atoms/cm³ .

步骤8：在温度为650-680℃的条件下保温20-30min，接着关闭加热系统、关闭给气系统，随炉冷却。Step 8: Keep the temperature at 650-680°C for 20-30min, then turn off the heating system, turn off the gas supply system, and cool with the furnace.

实施例2Example 2

以下提供对比实施例，即现有传统LED外延的生长方法。The following provides comparative examples, ie, existing conventional LED epitaxy growth methods.

步骤1：在温度为1000-1100℃，反应腔压力为100-300mbar，通入100-130L/min的H₂的条件下，处理蓝宝石衬底5-10分钟。Step 1: Treat the sapphire substrate for 5-10 minutes under the conditions that the temperature is 1000-1100° C., the pressure of the reaction chamber is 100-300 mbar, and 100-130 L/min of H₂ is introduced.

步骤2：生长低温GaN缓冲层2，并在所述低温GaN缓冲层2形成不规则小岛。Step 2: growing a low temperatureGaN buffer layer 2, and forming irregular islands in the low temperatureGaN buffer layer 2.

具体地，所述步骤2，进一步为：Specifically, thestep 2 is further:

在温度为500-600℃，反应腔压力为300-600mbar，通入10000-20000sccm的NH₃、50-100sccm的TMGa、100-130L/min的H₂的条件下，在所述蓝宝石衬底上生长所述低温GaN缓冲层2，所述低温GaN缓冲层2的厚度为20-40nm；On the sapphire substrate, the temperature is 500-600 ℃, the pressure of the reaction chamber is 300-600 mbar, NH₃ of 10,000-20,000 sccm, TMGa of 50-100 sccm, and H₂ of 100-130 L/min are fed into the sapphire substrate. growing the low temperatureGaN buffer layer 2, the thickness of the low temperatureGaN buffer layer 2 is 20-40nm;

在温度为1000-1100℃、反应腔压力为300-600mbar，通入30000-40000sccm的NH₃、100L/min-130L/min的H₂的条件下，在所述低温GaN缓冲层2上形成所述不规则小岛。Under the conditions of a temperature of 1000-1100° C., a reaction chamber pressure of 300-600 mbar, NH₃ of 30,000-40,000 sccm, and H₂ of 100L/min-130L/min, the low-temperatureGaN buffer layer 2 is formed on the low-temperatureGaN buffer layer 2 . Describe the irregular island.

步骤3：生长不掺杂GaN层3。Step 3: Growth ofundoped GaN layer 3 .

具体地，所述步骤3，进一步为：Specifically, thestep 3 is further:

在温度为1000-1200℃，反应腔压力为300-600mbar，通入30000-40000sccm的NH₃、200-400sccm的TMGa、100-130L/min的H₂的条件下，生长的所述不掺杂GaN层3；所述不掺杂GaN层3的厚度为2-4μm。Under the conditions that the temperature is 1000-1200 ℃, the pressure of the reaction chamber is 300-600 mbar, NH₃ of 30,000-40,000 sccm, TMGa of 200-400 sccm, and H₂ of 100-130 L/min are fed into theundoped GaN layer 3; the thickness of theundoped GaN layer 3 is 2-4 μm.

步骤4：生长Si掺杂的N型GaN层4。Step 4: Growth of Si-doped N-type GaN layer 4 .

具体地，所述步骤4，进一步为：Specifically, thestep 4 is further:

在温度为1000-1200℃，反应腔压力为300-600mbar，通入30000-60000sccm的NH₃、200-400sccm的TMGa、100-130L/min的H₂、20-50sccm的SiH₄的条件下，生长Si掺杂的N型GaN层4，所述n型GaN的厚度为3-4μm，Si掺杂的浓度为5E18atoms/cm³-1E19atoms/cm³。Under the conditions that the temperature is 1000-1200 ℃, the pressure of the reaction chamber is 300-600 mbar, and NH₃ of 30,000-60,000 sccm, TMGa of 200-400 sccm, H₂ of 100-130 L/min, and SiH₄ of 20-50 sccm are introduced, A Si-doped N-type GaN layer 4 is grown, the thickness of the n-type GaN is 3-4 μm, and the concentration of Si doping is 5E18 atoms/cm³ -1E19 atoms/cm³ .

步骤5：生长InGaN/GaN多量子阱层5。Step 5: Growth of the InGaN/GaN multiplequantum well layer 5 .

具体地，所述生长多量子阱层，进一步为：Specifically, the growth of the multiple quantum well layer is further:

保持反应腔压力300mbar-400mbar、保持温度720℃，通入流量为50000sccm-70000sccm的NH₃、20sccm-40sccm的TMGa、10000-15000sccm的TMIn及100L/min-130L/min的N₂，生长掺杂In的厚度为3nm的InGaN阱层51；Keep the pressure of the reaction chamber at 300mbar-400mbar, keep the temperature at 720°C, feed NH₃ with a flow rate of 50,000 sccm-70,000 sccm, TMGa with a flow rate of 20 sccm-40 sccm, TMIn with a flow rate of 10,000-15,000 sccm, and N₂ with a flow rate of 100 L/min-130 L/min, and grow doping An InGaN well layer 51 with an In thickness of 3 nm;

升高温度至800℃，保持反应腔压力300mbar-400mbar，通入流量为50000sccm-70000sccm的NH₃、20sccm-100sccm的TMGa及100L/min-130L/min的N₂，生长10nm的GaN垒层54；Raise the temperature to 800°C, keep the pressure of the reaction chamber at 300mbar-400mbar, pass in NH₃ with a flow rate of 50,000 sccm-70,000 sccm, TMGa with a flow rate of 20 sccm-100 sccm, and N₂ with a flow rate of 100 L/min-130 L/min, and grow a 10 nmGaN barrier layer 54 ;

重复交替生长InGaN阱层51和GaN垒层54，得到InGaN/GaN多量子阱层，其中，InGaN阱层51和GaN垒层54的交替生长周期数为7-13个。The InGaN welllayer 51 and theGaN barrier layer 54 are alternately grown repeatedly to obtain an InGaN/GaN multiple quantum well layer, wherein the number of alternate growth cycles of the InGaN welllayer 51 and theGaN barrier layer 54 is 7-13.

步骤6：生长AlGaN电子阻挡层6。Step 6: Growth of AlGaNelectron blocking layer 6 .

具体地，所述步骤6，进一步为：Specifically, thestep 6 is further:

在温度为900-950℃，反应腔压力为200-400mbar，通入50000-70000sccm的NH₃、30-60sccm的TMGa、100-130L/min的H₂、100-130sccm的TMAl、1000-1300sccm的Cp₂Mg的条件下，生长所述AlGaN电子阻挡层6，所述AlGaN层的厚度为40-60nm，其中，Mg掺杂的浓度为1E19atoms/cm³-1E20atoms/cm³。At the temperature of 900-950℃, the pressure of the reaction chamber is 200-400mbar, 50000-70000sccm of NH₃ , 30-60 sccm of TMGa, 100-130 L/min of H₂ , 100-130 sccm of TMAl, 1000-1300 sccm of H2 The AlGaNelectron blocking layer 6 is grown under the condition of Cp₂ Mg, the thickness of the AlGaN layer is 40-60 nm, and the concentration of Mg doping is 1E19 atoms/cm³ -1E20 atoms/cm³ .

步骤7：生长Mg掺杂的P型GaN层7。Step 7: Growth of Mg-doped P-type GaN layer 7 .

具体地，所述步骤7，进一步为：Specifically, thestep 7 is further:

在温度为950-1000℃，反应腔压力为400-900mbar，通入50000-70000sccm的NH₃、20-100sccm的TMGa、100-130L/min的H₂、1000-3000sccm的Cp₂Mg的条件下，生长厚度为50-200nm的Mg掺杂P型GaN层7，Mg掺杂浓度1E19atoms/cm³-1E20atoms/cm³。Under the conditions that the temperature is 950-1000 ℃, the pressure of the reaction chamber is 400-900 mbar, 50000-70000 sccm of NH₃ , 20-100 sccm of TMGa, 100-130 L/min of H₂ , 1000-3000 sccm of Cp₂ Mg are introduced , a Mg-doped P-type GaN layer 7 with a thickness of 50-200 nm is grown, and the Mg-doped concentration is 1E19 atoms/cm³ -1E20 atoms/cm³ .

步骤8：在温度为650-680℃的条件下保温20-30min，接着关闭加热系统、关闭给气系统，随炉冷却。Step 8: Keep the temperature at 650-680°C for 20-30min, then turn off the heating system, turn off the gas supply system, and cool with the furnace.

根据上述实施例1和实施例2分别制得样品1和样品2，样品1和样品2在相同的前工艺条件下镀ITO层约150nm，相同的条件下镀Cr/Pt/Au电极约1500nm，相同的条件下镀保护层SiO₂约100nm，然后在相同的条件下将样品研磨切割成635μm*635μm(25mil*25mil)的芯片颗粒，之后将样品1和样品2在相同位置各自挑选100颗晶粒，在相同的封装工艺下，封装成白光LED。采用积分球在驱动电流350mA条件下测试样品1和样品2的光电性能。Samples 1 and 2 were prepared according to the above-mentioned Examples 1 and 2, respectively.Samples 1 and 2 were plated with an ITO layer of about 150 nm under the same pre-process conditions, and plated with a Cr/Pt/Au electrode of about 1500 nm under the same conditions. Under the same conditions, the protective layer of SiO₂ is about 100nm, and then the samples are ground and cut into 635μm*635μm (25mil*25mil) chip particles under the same conditions, and then sample 1 andsample 2 are selected in the same position. 100 crystals each The chips are packaged into white LEDs under the same packaging process. The photoelectric properties ofsample 1 andsample 2 were tested by integrating sphere under the condition of driving current of 350mA.

表1样品1和样品2的电性参数比较结果Table 1 Comparison results of electrical parameters ofsample 1 andsample 2

将积分球获得的数据进行分析对比，从表1中可以看出，本发明提供的LED外延生长方法制备的LED(样品1)发光效率得到明显提升，并且工作更低，波长漂移更小，是因为本专利技术方案解决了现有LED外延生长方法中存在的电子泄露引起的量子效率出现坍塌问题，从而提高LED的发光效率，并降低工作电压，减少波长漂移。The data obtained by the integrating sphere are analyzed and compared, and it can be seen from Table 1 that the LED (sample 1) prepared by the LED epitaxial growth method provided by the present invention has significantly improved luminous efficiency, lower work, and smaller wavelength drift. Because the technical solution of the patent solves the problem of quantum efficiency collapse caused by electron leakage in the existing LED epitaxial growth method, thereby improving the luminous efficiency of the LED, reducing the working voltage and reducing the wavelength drift.

本发明中的提升量子效率的LED外延生长方法，跟传统的生长方法相比，达到了如下效果：Compared with the traditional growth method, the LED epitaxial growth method for improving quantum efficiency in the present invention achieves the following effects:

1、本发明通过在量子阱中引入低温Mg陡峭掺杂AlGaInN层结构，能够提供量子阱中的内建电场，从而削弱量子限制斯塔克效应，使量子阱能带在不同电流密度下波动更小，量子效率得到提高。在低温下，电子和空穴的迁移率提高，由于Mg的陡峭掺杂，增加的迁移率使得在低温时量子阱层的电阻增加，电子泄露出量子阱有源区的概率大大减少，通过Mg的陡峭掺杂可以缓解载流子泄露，从而解决LED器件的量子效率坍塌问题，LED发光效率得到提升。1. The present invention can provide a built-in electric field in the quantum well by introducing a low-temperature Mg steeply doped AlGaInN layer structure into the quantum well, thereby weakening the quantum confinement Stark effect and making the quantum well energy band fluctuate more under different current densities. small, the quantum efficiency is improved. At low temperature, the mobility of electrons and holes is improved. Due to the steep doping of Mg, the increased mobility makes the resistance of the quantum well layer increase at low temperature, and the probability of electrons leaking out of the quantum well active region is greatly reduced. The steep doping can alleviate carrier leakage, thereby solving the problem of quantum efficiency collapse of LED devices, and the luminous efficiency of LEDs is improved.

2、本发明通过在量子阱中先生长低温Mg陡峭掺杂AlGaInN层结构后再生长高温不掺杂AlGaInN层，使整个量子阱层形成了梯度的电容结构，可以达到限流作用，极大程度地减少了大电流密度下的发光衰减效应；并可以阻碍电荷径向移动，使电荷向四周扩散，即加强电流横向扩展能力，从而提高LED发光效率，并且正向驱动电压更低，波长漂移更小。2. In the present invention, by growing the low-temperature Mg steeply doped AlGaInN layer structure in the quantum well, and then growing the high-temperature undoped AlGaInN layer, the entire quantum well layer forms a gradient capacitance structure, which can achieve the current limiting effect and greatly increase the It can effectively reduce the luminous attenuation effect under high current density; and can hinder the radial movement of the charge, so that the charge diffuses to the surrounding, that is, strengthens the lateral expansion ability of the current, thereby improving the luminous efficiency of the LED, and the forward driving voltage is lower and the wavelength drift is more. Small.

由于方法部分已经对本申请实施例进行了详细描述，这里对实施例中涉及的结构与方法对应部分的展开描述省略，不再赘述。对于结构中具体内容的描述可参考方法实施例的内容，这里不再具体限定。Since the embodiments of the present application have been described in detail in the method part, the expanded description of the corresponding parts of the structures and methods involved in the embodiments is omitted here, and will not be repeated here. For the description of the specific content in the structure, reference may be made to the content of the method embodiment, which is not specifically limited here.

上述说明示出并描述了本申请的若干优选实施例，但如前所述，应当理解本申请并非局限于本文所披露的形式，不应看作是对其他实施例的排除，而可用于各种其他组合、修改和环境，并能够在本文所述申请构想范围内，通过上述教导或相关领域的技术或知识进行改动。而本领域人员所进行的改动和变化不脱离本申请的精神和范围，则都应在本申请所附权利要求的保护范围内。The above description shows and describes several preferred embodiments of the present application, but as mentioned above, it should be understood that the present application is not limited to the form disclosed herein, and should not be regarded as excluding other embodiments, but can be used in various various other combinations, modifications and environments, and can be modified within the scope of the concept of the application described herein, using the above teachings or skill or knowledge in the relevant field. However, modifications and changes made by those skilled in the art do not depart from the spirit and scope of the present application, and should all fall within the protection scope of the appended claims of the present application.

Claims (8)

Translated fromChinese

1.一种提升量子效率的LED外延生长方法，其特征在于，依次包括：处理衬底、生长低温GaN缓冲层、生长不掺杂GaN层、生长掺杂Si的N型GaN层、生长多量子阱层、生长AlGaN电子阻挡层、生长掺杂Mg的P型GaN层和降温冷却；所述生长多量子阱层依次包括：生长InGaN阱层、生长低温Mg陡峭掺杂AlGaInN层、生长高温不掺杂AlGaInN层和生长GaN垒层，具体为：1. a LED epitaxial growth method for improving quantum efficiency is characterized in that, comprising successively: processing substrate, growing low-temperature GaN buffer layer, growing undoped GaN layer, growing Si-doped N-type GaN layer, growing multi-quantum A well layer, growing an AlGaN electron blocking layer, growing a Mg-doped P-type GaN layer, and cooling; the growing multiple quantum well layer sequentially includes: growing an InGaN well layer, growing a low-temperature Mg steeply doped AlGaInN layer, growing a high-temperature undoped layer Hetero AlGaInN layer and growth GaN barrier layer, specifically:A、将反应腔压力控制在200-280mbar，反应腔温度控制在900-950℃，通入流量为50000sccm-70000sccm的NH₃、20sccm-40sccm的TMGa、10000-15000sccm的TMIn及100L/min-130L/min的N₂，生长厚度为3nm的InGaN阱层；A. The pressure of the reaction chamber is controlled at 200-280mbar, the temperature of the reaction chamber is controlled at 900-950℃, and the flow rate is 50000sccm-70000sccm NH₃ , 20sccm-40sccm TMGa, 10000-15000sccm TMIn and 100L/min-130L /min of N₂ to grow an InGaN well layer with a thickness of 3 nm;B、保持反应腔压力不变，降低反应腔温度至450-520℃，通入160-180sccm的NH₃、500-600sccm的TMAl、300sccm-400sccm的TMGa、100L/min-130L/min的N₂以及1300-1400sccm的TMIn以及Cp₂Mg，生长过程中Mg掺杂浓度先以每秒增加4E+16atoms/cm³，从4E+19atoms/cm³线性渐变增加至6E+19atoms/cm³，再以每秒增加9E+18atoms/cm³，从6E+19atoms/cm³线性渐变增加至6E+21atoms/cm³，生长厚度为15nm-20nm的低温Mg陡峭掺杂AlGaInN层；B. Keep the pressure of the reaction chamber unchanged, reduce the temperature of the reaction chamber to 450-520 ℃, and feed NH₃ of 160-180 sccm, TMAl of 500-600 sccm, TMGa of 300-400 sccm, and N₂ of 100-130 L/min and 1300-1400sccm of TMIn and Cp₂ Mg. During the growth process, the Mg doping concentration first increased by 4E+16atoms/cm³ per second, linearly increased from 4E+19 atoms/cm³ to 6E+19 atoms/cm³ , and then increased by 4E+16 atoms/cm 3 per second. Increase 9E+18atoms/cm³ per second, linearly increase from 6E+19 atoms/cm³ to 6E+21 atoms/cm³ , grow a low-temperature Mg steeply doped AlGaInN layer with a thickness of 15nm-20nm;C、保持反应腔压力不变，升高反应腔温度至950-1000℃，通入160-180sccm的NH₃、500-600sccm的TMAl、300sccm-400sccm的TMGa、100L/min-130L/min的N₂以及1300-1400sccm的TMIn，生长厚度为15nm-20nm的高温不掺杂AlGaInN层；C. Keep the pressure of the reaction chamber unchanged, increase the temperature of the reaction chamber to 950-1000 ℃, and feed NH₃ of 160-180 sccm, TMAl of 500-600 sccm, TMGa of 300-400 sccm, and N of 100-130 L/min.₂ and 1300-1400sccm TMIn, the growth thickness is 15nm-20nm high temperature undoped AlGaInN layer;D、降低温度至800℃，保持反应腔压力300mbar-400mbar，通入流量为30000sccm-40000sccm的NH₃、20sccm-60sccm的TMGa及100L/min-130L/min的N₂，生长10nm的GaN垒层；D. Lower the temperature to 800°C, keep the pressure of the reaction chamber at 300mbar-400mbar, pass in NH₃ with a flow rate of 30,000 sccm-40,000 sccm, TMGa with a flow rate of 20 sccm-60 sccm and N₂ with a flow rate of 100 L/min-130 L/min, and grow a GaN barrier layer of 10 nm. ;重复上述步骤A-D，周期性依次生长InGaN阱层、低温Mg陡峭掺杂AlGaInN层、高温不掺杂AlGaInN层和GaN垒层，生长周期数为3-8个。The above steps A-D are repeated to periodically grow an InGaN well layer, a low-temperature Mg steeply doped AlGaInN layer, a high-temperature undoped AlGaInN layer and a GaN barrier layer, and the number of growth cycles is 3-8.2.根据权利要求1所述的提升量子效率的LED外延生长方法，其特征在于，在1000℃-1100℃的温度下，通入100L/min-130L/min的H₂，保持反应腔压力100mbar-300mbar，处理蓝宝石衬底5min-10min。2 . The LED epitaxial growth method for improving quantum efficiency according to claim 1 , wherein, at a temperature of 1000°C-1100°C, 100L/min-130L/min of H₂ is introduced, and the reaction chamber pressure is kept at 100 mbar. 3 . -300mbar, process sapphire substrate for 5min-10min.3.根据权利要求1所述的提升量子效率的LED外延生长方法，其特征在于，所述生长低温GaN缓冲层的具体过程为：3. The LED epitaxial growth method for improving quantum efficiency according to claim 1, wherein the specific process of growing the low-temperature GaN buffer layer is:降温至500℃-600℃，保持反应腔压力300mbar-600mbar，通入流量为10000sccm-20000sccm的NH₃、50sccm-100sccm的TMGa及100L/min-130L/min的H₂，在蓝宝石衬底上生长厚度为20nm-40nm的低温GaN缓冲层；Cool down to 500℃-600℃, keep the pressure of the reaction chamber at 300mbar-600mbar, pass NH₃ of 10000sccm-20000sccm, TMGa of 50sccm-100sccm and H₂ of 100L/min-130L/min, and grow on sapphire substrate Low temperature GaN buffer layer with a thickness of 20nm-40nm;升高温度到1000℃-1100℃，保持反应腔压力300mbar-600mbar，通入流量为30000sccm-40000sccm的NH₃、100L/min-130L/min的H₂，保温300s-500s，将低温GaN缓冲层腐蚀成不规则岛形。Raise the temperature to 1000℃-1100℃, keep the pressure of the reaction chamber at 300mbar-600mbar, pass in NH₃ with a flow rate of 30000sccm-40000sccm, and H₂ with a flow rate of 100L/min-130L/min, keep the temperature for 300s-500s, and put the low-temperature GaN buffer layer Corroded into irregular islands.4.根据权利要求1所述的提升量子效率的LED外延生长方法，其特征在于，所述生长不掺杂GaN层的具体过程为：4. The LED epitaxial growth method for improving quantum efficiency according to claim 1, wherein the specific process of growing the undoped GaN layer is:升高温度到1000℃-1200℃，保持反应腔压力300mbar-600mbar，通入流量为30000sccm-40000sccm的NH₃、200sccm-400sccm的TMGa及100L/min-130L/min的H₂，持续生长2μm-4μm的不掺杂GaN层。Raise the temperature to 1000 ℃-1200 ℃, keep the pressure of the reaction chamber at 300mbar-600mbar, pass in the flow rate of 30000sccm-40000sccm NH₃ , 200sccm-400sccm TMGa and 100L/min-130L/min H₂ , continue to grow 2μm- 4μm undoped GaN layer.5.根据权利要求1所述的提升量子效率的LED外延生长方法，其特征在于，所述生长掺杂Si的N型GaN层的具体过程为：5. The LED epitaxial growth method for improving quantum efficiency according to claim 1, wherein the specific process of growing the Si-doped N-type GaN layer is:保持反应腔压力300mbar-600mbar，保持温度1000℃-1200℃，通入流量为30000sccm-60000sccm的NH₃、200sccm-400sccm的TMGa、100L/min-130L/min的H₂及20sccm-50sccm的SiH₄，持续生长3μm-4μm掺杂Si的N型GaN，其中，Si掺杂浓度5E18atoms/cm³-1E19atoms/cm³。Keep the pressure of the reaction chamber at 300mbar-600mbar, keep the temperature at 1000℃-1200℃, and pass in the flow rate of_NH3 of 30000sccm-60000sccm, TMGa of 200sccm-400sccm,_H2 of 100L/min-130L/min and_SiH4 of 20sccm-50sccm , continue to grow 3μm-4μm Si-doped N-type GaN, wherein the Si doping concentration is 5E18atoms/cm³ -1E19 atoms/cm³ .6.根据权利要求1所述的提升量子效率的LED外延生长方法，其特征在于，所述生长AlGaN电子阻挡层的具体过程为：6. The LED epitaxial growth method for improving quantum efficiency according to claim 1, wherein the specific process of growing the AlGaN electron blocking layer is:在温度为900-950℃，反应腔压力为200-400mbar，通入50000-70000sccm的NH₃、30-60sccm的TMGa、100-130L/min的H₂、100-130sccm的TMAl、1000-1300sccm的Cp₂Mg的条件下，生长所述AlGaN电子阻挡层，所述AlGaN层的厚度为40-60nm，其中，Mg掺杂的浓度为1E19atoms/cm³-1E20atoms/cm³。At the temperature of 900-950℃, the pressure of the reaction chamber is 200-400mbar, 50000-70000sccm of NH₃ , 30-60 sccm of TMGa, 100-130 L/min of H₂ , 100-130 sccm of TMAl, 1000-1300 sccm of H2 The AlGaN electron blocking layer is grown under the condition of Cp₂ Mg, the thickness of the AlGaN layer is 40-60 nm, and the concentration of Mg doping is 1E19 atoms/cm³ -1E20 atoms/cm³ .7.根据权利要求1所述的提升量子效率的LED外延生长方法，其特征在于，所述生长掺Mg的P型GaN层的具体过程为：7. The LED epitaxial growth method for improving quantum efficiency according to claim 1, wherein the specific process of growing the Mg-doped P-type GaN layer is:保持反应腔压力400mbar-900mbar、温度950℃-1000℃，通入流量为50000sccm-70000sccm的NH₃、20sccm-100sccm的TMGa、100L/min-130L/min的H₂及1000sccm-3000sccm的Cp₂Mg，持续生长50nm-200nm的掺Mg的P型GaN层，其中，Mg掺杂浓度1E19atoms/cm³-1E20atoms/cm³。Keep the pressure of the reaction chamber at 400mbar-900mbar, the temperature at 950℃-1000℃, and the flow rate is 50000sccm-70000sccm NH₃ , 20sccm-100sccm TMGa, 100L/min-130L/min H₂ and 1000sccm-3000sccm Cp₂ Mg , the Mg-doped P-type GaN layer of 50 nm-200 nm is continuously grown, wherein the Mg doping concentration is 1E19 atoms/cm³ -1E20 atoms/cm³ .8.根据权利要求1所述的提升量子效率的LED外延生长方法，其特征在于，所述降温冷却的具体过程为：8. The LED epitaxial growth method for improving quantum efficiency according to claim 1, wherein the specific process of cooling down is:降温至650℃-680℃，保温20min-30min，关闭加热系统、关闭给气系统，随炉冷却。Cool down to 650℃-680℃, keep warm for 20min-30min, close the heating system, close the gas supply system, and cool with the furnace.

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