CN111446158B - Metal deposition process after wafer back cutting - Google Patents
Metal deposition process after wafer back cuttingDownload PDFInfo
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- CN111446158B CN111446158BCN202010148393.6ACN202010148393ACN111446158BCN 111446158 BCN111446158 BCN 111446158BCN 202010148393 ACN202010148393 ACN 202010148393ACN 111446158 BCN111446158 BCN 111446158B
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- 239000011248coating agentSubstances0.000claimsabstractdescription11
- 238000000576coating methodMethods0.000claimsabstractdescription11
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- 239000011521glassSubstances0.000claimsdescription21
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- 238000010438heat treatmentMethods0.000claimsdescription2
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- 239000007767bonding agentSubstances0.000claims2
- 238000004519manufacturing processMethods0.000abstractdescription4
- -1cuttingSubstances0.000abstract1
- 230000008020evaporationEffects0.000description3
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- 238000012986modificationMethods0.000description2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3043—Making grooves, e.g. cutting
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/32051—Deposition of metallic or metal-silicide layers
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Dicing (AREA)
Abstract
Description
Technical Field
The invention relates to a metal deposition process, in particular to a metal deposition process after wafer back cutting.
Background
In the production process of crystal grains, after the processes of wafer cleaning, oxide deposition photoetching patterning, etching patterning, metal deposition and the like are firstly completed, a glass carrier plate keyboard is combined on a silicon wafer to be thinned, and the back metal deposition process is carried out. However, the wafer thinned to 20-80 microns is subjected to a die cutting process after the metal deposition process is completed, and when the die is cut, due to the warpage of the thin wafer and the metal deposition of the wafer, the wafer is prone to crack due to the shear stress varying during cutting under external force, and the die cannot be reworked and damaged.
Disclosure of Invention
The invention aims to provide a metal deposition process after wafer back cutting, which comprises the steps of forming a first groove on an adhesive by cutting, and enabling metal between crystal grains to fall into the first groove when the metal is deposited, so that the metal cannot adhere to two adjacent crystal grains, the traditional process flow of metal deposition and cutting is replaced, the wafer breakage caused by the adhesion of the adjacent crystal grains by the metal during cutting is avoided, the yield of the crystal grains is improved, and the production cost of the crystal grains is reduced.
The purpose of the invention can be realized by the following technical scheme:
a metal deposition process after wafer back cutting comprises the following steps:
s1: primary metal deposition
And performing metal deposition on the front surface of the wafer to form a first deposition layer on the wafer.
S2: bonding of
And bonding the front surface of the wafer on a glass carrier plate, wherein the glass carrier plate is provided with an adhesive.
S3: thinning
And thinning the back of the wafer.
S4: photoresist coating
Coating photoresist on the back of the crystal grain to form a photoresist coating layer on the crystal grain, shielding the crystal grain on the front of the wafer, exposing and developing to expose the cutting line.
S5: cutting of
And etching cutting lines among the crystal grains on the cut wafer to finish the cutting of the crystal grains, wherein the adjacent crystal grains are not contacted after cutting.
S6: adhesive removal
A first recess is formed in the adhesive by anisotropically etching the adhesive between the crystal grains with oxygen plasma, and the photoresist coating layer is removed simultaneously with the oxygen plasma.
S7: secondary metal deposition
And performing metal deposition on the back of the crystal grain by using a sputtering machine/a vapor deposition machine, forming a second deposition layer on the back of the crystal grain, wherein the metal falls into the first groove due to the directionality/selectivity of the metal deposition, so that the metal falling into the first groove is not contacted with the crystal grain.
S8: fixing
And fixing the thinned surface of the crystal grain on a film frame.
S9: debonding
And separating the crystal grains from the glass carrier plate by laser.
S10: cleaning up
And cleaning residues on the front surface of the crystal grains, separating the crystal grains and fixing the crystal grains on the film frame.
Further, the wafer is adhered to the glass carrier plate by the adhesive in the S2.
Further, the thinned thickness of the S3 is smaller than the thickness of the wafer.
Further, in the step S5, the wafer is etched by using the fluorine-containing plasma.
Further, the cross section of the first groove in the S6 is in a flat cup-shaped structure.
Further, before anisotropic etching (anistropic) in S6, an oxygen plasma is used to isotropically etch (isotropic) the adhesive between the crystal grains, so as to form a second groove on the adhesive.
Further, after anisotropic etching (anistropic) in S6, an oxygen plasma isotropic etching (isotropic) is used to etch the adhesive between the crystal grains, so as to form a second groove at the bottom of the first groove.
Further, the depth of the second groove is larger than that of the first groove.
Further, the width of the first groove is larger than that of the second groove.
The invention has the beneficial effects that:
1. according to the invention, the metal deposition is carried out by cutting firstly, so that a groove is formed on the adhesive, and when the metal is deposited, the metal between crystal grains falls into the groove, so that the metal can not adhere to two adjacent crystal grains;
2. the metal deposition replaces the traditional process flow of metal deposition and cutting, avoids wafer crack caused by adhesion of adjacent crystal grains by metal during cutting, improves the yield of the crystal grains and reduces the production cost of the crystal grains.
Drawings
The invention will be further described with reference to the accompanying drawings.
FIG. 1 is a schematic view of a one-time metal deposition structure according to the present invention;
FIG. 2 is a schematic view of a bonding configuration of the present invention;
FIG. 3 is a schematic view of a thinning structure of the present invention;
FIG. 4 is a schematic view of a photoresist coating structure according to the present invention;
FIG. 5 is a schematic view of a cutting structure of the present invention;
FIG. 6 is a schematic view of an adhesive removal structure of the present invention;
FIG. 7 is an enlarged view of the structure at A in FIG. 6 according to the present invention;
FIG. 8 is a schematic view of an adhesive removal structure of the present invention;
FIG. 9 is an enlarged view of the structure of FIG. 8 at B in accordance with the present invention;
FIG. 10 is a schematic view of a secondary metal deposition structure according to the present invention;
FIG. 11 is a schematic view of a mounting structure of the present invention;
FIG. 12 is a schematic illustration of an debonding structure of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1
A metal deposition process after wafer back cutting comprises the following steps:
s1: primary metal deposition
Metal deposition is performed on the front surface of the wafer 1, and as shown in fig. 1, afirst deposition layer 2 is formed on the wafer 1.
S2: bonding of
The front side of the wafer 1 is bonded on aglass carrier 4, as shown in fig. 2, an adhesive 3 is provided on theglass carrier 4, and the wafer 1 is adhered on theglass carrier 4 by the adhesive 3 through UV bonding.
S3: thinning
The back side of the wafer 1 is thinned, as shown in fig. 3, to a thickness less than that of the wafer 1.
S4: photoresist coating
The back side of thedie 6 is coated with photoresist, as shown in fig. 4, aphotoresist coating layer 5 is formed on thedie 6 to shield thedie 6 on the front side of the wafer 1, and the wafer is exposed to light and developed to expose the scribe lines.
S5: cutting of
The cutting lines between the dies 6 on the wafer 1 are etched by using fluorine-containing plasma, as shown in fig. 5, the die cutting is completed, and the adjacent dies 6 are not contacted after cutting.
S6: adhesive removal
The adhesive 3 between thecrystal grains 6 is anisotropically etched by oxygen plasma (anisotropic etching) to form afirst groove 7 on the adhesive 3, the cross section of thefirst groove 7 is a flat cup-shaped structure, as shown in fig. 6 and 7, and thephotoresist coating layer 5 is removed by oxygen plasma at the same time.
S7: secondary metal deposition
And (3) performing metal deposition on the back surface of thecrystal grain 6 by using a sputtering machine/an evaporation machine, forming a second deposition layer 9 on the back surface of thecrystal grain 6, wherein the metal falls into thefirst groove 7 due to the directionality/selectivity of the metal deposition, as shown in fig. 10, so that the metal falling into thefirst groove 7 is not in contact with thecrystal grain 6.
S8: fixing
The thinned surfaces of thecrystal grains 6 are fixed to thefilm frame 10 as shown in fig. 11.
S9: debonding
Thedie 6 is detached from theglass carrier 4 by laser, as shown in fig. 12.
S10: cleaning up
The residues on the front surface of thecrystal grains 6 are cleaned, and thecrystal grains 6 are separated and fixed on thefilm frame 10.
Example 2
A metal deposition process after wafer back cutting comprises the following steps:
s1: primary metal deposition
Metal deposition is performed on the front surface of the wafer 1, and as shown in fig. 1, afirst deposition layer 2 is formed on the wafer 1.
S2: bonding of
The front side of the wafer 1 is bonded to aglass carrier 4, as shown in fig. 2, an adhesive 3 is provided on theglass carrier 4, and the wafer 1 is adhered to theglass carrier 4 by the adhesive 3 through UV bonding.
S3: thinning
The back side of the wafer 1 is thinned, as shown in fig. 3, to a thickness less than the thickness of the wafer 1.
S4: photoresist coating
The back side of thedie 6 is coated with photoresist, as shown in fig. 4, aphotoresist coating layer 5 is formed on thedie 6 to shield thedie 6 on the front side of the wafer 1, and the wafer is exposed to light and developed to expose the scribe lines.
S5: cutting of
The cutting lines between the dies 6 on the wafer 1 are etched by using fluorine-containing plasma, as shown in fig. 5, the die cutting is completed, and the adjacent dies 6 are not contacted after cutting.
S6: adhesive removal
Firstly, using oxygen plasma anisotropic etching (anistropic) to etch the adhesive 3 between thecrystal grains 6, forming afirst groove 7 on the adhesive 3, wherein the cross section of thefirst groove 7 is a flat cup-shaped structure, as shown in fig. 6, 7, 8 and 9, then using oxygen plasma isotropic etching (isotropic) to etch the adhesive 3 between thecrystal grains 6, forming asecond groove 8 at the bottom of thefirst groove 7, wherein the depth of thesecond groove 8 is greater than that of thefirst groove 7, the width of thefirst groove 7 is greater than that of thesecond groove 8, and the oxygen plasma removes thephotoresist coating 5.
S7: secondary metal deposition
And (3) performing metal deposition on the back surface of thecrystal grain 6 by using a sputtering machine/an evaporation machine, forming a second deposition layer 9 on the back surface of thecrystal grain 6, wherein the metal falls into thefirst groove 7 due to the directionality/selectivity of the metal deposition, as shown in fig. 10, so that the metal falling into thefirst groove 7 is not in contact with thecrystal grain 6.
S8: fixing the device
The thinned surface of thecrystal grain 6 is fixed to thefilm frame 10 as shown in fig. 11.
S9: debonding
Thedie 6 is detached from theglass carrier 4 by laser, as shown in fig. 12.
S10: cleaning up
The residues on the front surface of thecrystal grain 6 are cleaned, and thecrystal grain 6 is separated and fixed on thefilm frame 10.
Example 3
A metal deposition process after wafer back cutting comprises the following steps:
s1: primary metal deposition
Metal deposition is performed on the front surface of the wafer 1, and as shown in fig. 1, afirst deposition layer 2 is formed on the wafer 1.
S2: bonding of
The front side of the wafer 1 is bonded on aglass carrier 4, as shown in fig. 2, an adhesive 3 is provided on theglass carrier 4, and the wafer 1 is adhered on theglass carrier 4 by the adhesive 3 through thermal bonding.
S3: thinning
The back side of the wafer 1 is thinned, as shown in fig. 3, to a thickness less than the thickness of the wafer 1.
S4: photoresist coating
Photoresist coating is performed on the back surface of thedie 6, as shown in fig. 4, aphotoresist coating layer 5 is formed on thedie 6, thedie 6 on the front surface of the wafer 1 is masked, and the wafer is exposed and developed to expose the scribe lines.
S5: cutting of
The cutting lines between the dies 6 on the wafer 1 are etched by using fluorine-containing plasma, as shown in fig. 5, the die cutting is completed, and the adjacent dies 6 are not contacted after cutting.
S6: adhesive removal
Firstly, using oxygen plasma to isotropically etch (isotropic) the adhesive 3 among thecrystal grains 6 to form asecond groove 8 on the adhesive 3, as shown in fig. 6, 7, 8 and 9, and then using oxygen plasma to anisotropically etch (anistropic) the adhesive 3 among thecrystal grains 6 to form afirst groove 7 on the adhesive 3, wherein thesecond groove 8 is located at the bottom of thefirst groove 7 and is communicated with each other, the depth of thesecond groove 8 is greater than that of thefirst groove 7, the width of thefirst groove 7 is greater than that of thesecond groove 8, and the oxygen plasma removes thephotoresist coating layer 5 at the same time.
S7: secondary metal deposition
And (3) performing metal deposition on the back surface of thecrystal grain 6 by using a sputtering machine/an evaporation machine, forming a second deposition layer 9 on the back surface of thecrystal grain 6, wherein the metal falls into thefirst groove 7 due to the directionality/selectivity of the metal deposition, as shown in fig. 10, so that the metal falling into thefirst groove 7 is not in contact with thecrystal grain 6.
S8: fixing the device
The thinned surface of thecrystal grain 6 is fixed to thefilm frame 10 as shown in fig. 11.
S9: debonding
Thecrystal grains 6 are detached from theglass carrier plate 4 by heating, as shown in fig. 12.
S10: cleaning up
The residues on the front surface of thecrystal grain 6 are cleaned, and thecrystal grain 6 is separated and fixed on thefilm frame 10.
In the description herein, references to the description of "one embodiment," "an example," "a specific example" or the like are intended to mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
The foregoing shows and describes the general principles, essential features, and advantages of the invention. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, which are given by way of illustration of the principles of the present invention, but that various changes and modifications may be made without departing from the spirit and scope of the invention, and such changes and modifications are within the scope of the invention as claimed.
Claims (10)
1. A metal deposition process after wafer back cutting is characterized by comprising the following steps:
s1: primary metal deposition
Carrying out metal deposition on the front surface of the wafer (1) to form a first deposition layer (2) on the wafer (1);
s2: bonding of
Bonding the front surface of the wafer (1) on a glass carrier plate (4), wherein the glass carrier plate (4) is provided with an adhesive (3);
s3: thinning
Thinning the back of the wafer (1);
s4: photoresist coating
Carrying out photoresist coating on the back of the wafer (1), forming a photoresist coating layer (5) on the crystal grains (6), shielding the crystal grains (6) on the front surface of the wafer (1), exposing and developing to expose the cutting lines;
s5: cutting of
Etching cutting lines among the crystal grains (6) on the cutting wafer (1) to finish the crystal grain cutting, wherein the adjacent crystal grains (6) are not contacted after the cutting;
s6: adhesive removal
Anisotropically etching the adhesive (3) between the crystal grains (6) by using oxygen plasma to form a first groove (7) on the adhesive (3), and removing the photoresist coating layer (5) by using oxygen plasma;
s7: secondary metal deposition
Metal deposition is carried out on the back of the crystal grain (6) by adopting a sputtering machine or a vapor deposition machine, a second deposition layer (9) is formed on the back of the crystal grain (6), and due to the directionality or selectivity of the metal deposition, the metal falls into the first groove (7) so that the metal falling into the first groove (7) is not contacted with the crystal grain (6);
s8: fixing
Fixing the back of the crystal grain (6) on a film frame (10);
s9: debonding
Separating the crystal grains (6) from the glass carrier plate (4) through debonding;
s10: cleaning up
And cleaning residues on the front surfaces of the crystal grains (6), separating the crystal grains (6) and fixing the crystal grains on the film frame (10).
2. The post-wafer-backside-dicing metal deposition process according to claim 1, wherein the adhesive (3) in S2 adheres the wafer (1) to the glass carrier (4) by thermal bonding or UV bonding.
3. The post-wafer backside cut metal deposition process of claim 1, wherein the thickness of the thinned S3 is smaller than the thickness of the wafer (1).
4. The post wafer backside saw metal deposition process of claim 1, wherein in S5, a fluorine-containing plasma is used to etch the wafer (1).
5. The process of claim 1, wherein the cross section of the first recess (7) in the S6 is a flat cup-shaped structure.
6. The process of claim 1, wherein the step of etching the bonding agent (3) between the dies (6) is performed isotropically by using oxygen plasma before the step of etching S6, so as to form the second grooves (8) on the bonding agent (3).
7. The process of claim 1, wherein the anisotropic etching in S6 is followed by an oxygen plasma isotropic etching of the adhesive (3) between the dies (6) to form a second recess (8) at the bottom of the first recess (7).
8. The post-wafer-backside-cut metal deposition process of any of claims 6 to 7, wherein the depth of the second recess (8) is greater than the depth of the first recess (7).
9. The post wafer backside cut metal deposition process of any of claims 6-7, wherein the width of the first groove (7) is larger than the width of the second groove (8).
10. The process of claim 1, wherein in S9, the debonding is performed by laser or heating.
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| CN113113298A (en)* | 2021-04-09 | 2021-07-13 | 绍兴同芯成集成电路有限公司 | Wafer back metal deposition process |
| CN114934272B (en)* | 2022-04-29 | 2023-12-08 | 东莞领益精密制造科技有限公司 | Metal strip group, scroll screen forming process and mobile phone |
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| US8853003B2 (en)* | 2011-08-09 | 2014-10-07 | Alpha & Omega Semiconductor, Inc. | Wafer level chip scale package with thick bottom metal exposed and preparation method thereof |
| CN102496622B (en)* | 2011-11-25 | 2016-03-30 | 格科微电子（上海）有限公司 | The method for packing of image sensor chip and camera module |
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