CN111364025A - An improved ALD coating machine - Google Patents

Abstract

Translated fromChinese

本发明适用于原子层镀膜领域，具体是一种改进型ALD镀膜机，包括在内部安装有拿持结构的传送放置通道，和多个放置腔体；其中，所述拿持结构可对位于传送放置通道内部的晶圆拿持取放到多个放置腔体内部的盒体中；还包括多个ALD反应器；进而，拿持结构对位于传送放置通道内部的晶圆拿持取放到多个放置腔体内部的盒体中，并利用盒体可对盒体及晶圆进行翻转，移动到ALD反应器中进行单原子层沉积工艺反应，进行镀膜；以及多个放置腔体和多个ALD反应器可同时进行多个晶圆镀膜，效率得以提高；可对多个ALD反应器做不同的介电常数材料的生长，实现了多种材料工艺交替的镀膜处理，无需更换生产线，提高效率的基础上节省生产线的成本。

The present invention is applicable to the field of atomic layer coating, in particular to an improved ALD coating machine, comprising a transfer placement channel with a holding structure installed inside, and a plurality of placement cavities; wherein, the holding structure can The wafers inside the placement channel are held and placed into a plurality of cassettes inside the placement cavity; a plurality of ALD reactors are also included; furthermore, the holding structure is used to hold, pick, and place the wafers located in the conveying and placing channels. One is placed in a box inside the cavity, and the box and the wafer can be turned over by the box, and moved to the ALD reactor for single atomic layer deposition process reaction and coating; and multiple placement cavities and multiple The ALD reactor can perform multiple wafer coating processes at the same time, and the efficiency is improved; the growth of materials with different dielectric constants can be performed on multiple ALD reactors, realizing the alternate coating treatment of various material processes, without changing the production line and improving the efficiency. On the basis of saving the cost of the production line.

Description

Translated fromChinese

一种改进型ALD镀膜机An improved ALD coating machine

技术领域technical field

本发明属于原子层镀膜领域，具体是一种改进型ALD镀膜机。The invention belongs to the field of atomic layer coating, in particular to an improved ALD coating machine.

背景技术Background technique

目前空间ALD（atomic layer deposition，单原子层沉积）机台普遍体积较大，且结构复杂，多片工艺的ALD机台设计如：Picosun （芬兰ALD设备供应商）都是利用金属cassette（晶圆装载盒）的方法，这种方法会导致运送晶圆十分复杂，而且不稳定，手动取片比较多，如果使用自动化的方法，经常出现掉片的现象；ASM（美国ALD设备供应商）及TEL（日本ALD设备供应商）的多片式ALD炉子方法所使用气体及前驱体使用效率低，会造成巨大的浪费。At present, space ALD (atomic layer deposition, single atomic layer deposition) machines are generally large in size and complex in structure. The design of ALD machines for multi-chip processes, such as: Picosun (Finnish ALD equipment supplier), uses metal cassettes (wafers). Loading box) method, this method will lead to very complicated and unstable transportation of wafers, and there are more manual fetches. If the automated method is used, the phenomenon of wafer drop often occurs; The gas and precursor used in the multi-chip ALD furnace method (a Japanese ALD equipment supplier) are inefficient and cause huge waste.

发明内容SUMMARY OF THE INVENTION

本发明的目的在于提供一种改进型ALD镀膜机，以解决目前市场上的ALD机台效率低的的问题。本发明提供如下技术方案：The purpose of the present invention is to provide an improved ALD coating machine to solve the problem of low efficiency of the ALD machines currently on the market. The present invention provides the following technical solutions:

一种改进型ALD镀膜机，包括在内部安装有拿持结构的传送放置通道，和多个放置腔体；An improved ALD coating machine, comprising a transfer placement channel with a holding structure installed inside, and a plurality of placement cavities;

其中，所述拿持结构可对位于传送放置通道内部的晶圆拿持取放到多个放置腔体内部的盒体中，营造真空环境后可对盒体及晶圆进行翻转；Wherein, the holding structure can hold and place the wafers located inside the conveying and placing channels into the boxes inside the multiple placement cavities, and the boxes and the wafers can be turned over after creating a vacuum environment;

还包括多个ALD反应器，而放置腔体内部的晶圆移动到ALD反应器中进行单原子层沉积工艺反应；It also includes a plurality of ALD reactors, and the wafers placed inside the chamber are moved to the ALD reactors for single atomic layer deposition process reactions;

进而，拿持结构对位于传送放置通道内部的晶圆拿持取放到多个放置腔体内部的盒体中，营造真空环境后对盒体及晶圆进行翻转并移动到ALD反应器中进行单原子层沉积工艺反应，进行镀膜；以及多个放置腔体和多个ALD反应器可同时进行多个晶圆镀膜，效率得以提高；同时，可对多个ALD反应器做不同的介电常数材料的生长，实现了多种材料工艺交替的镀膜处理，无需更换生产线，提高效率的基础上节省生产线的成本。Furthermore, the holding structure holds and places the wafers located inside the conveying and placing channels into the boxes inside the multiple placement cavities. After creating a vacuum environment, the boxes and wafers are turned over and moved to the ALD reactor for processing. The single atomic layer deposition process reacts and performs coating; and multiple placement cavities and multiple ALD reactors can simultaneously perform multiple wafer coating, and the efficiency is improved; at the same time, multiple ALD reactors can be used for different dielectric constants The growth of the material realizes the alternate coating treatment of various material processes, without the need to replace the production line, and saves the cost of the production line on the basis of improving the efficiency.

本发明中：所述拿持结构包括机械手，以用晶圆取放。In the present invention, the holding structure includes a manipulator to pick and place wafers.

再进一步的方案：所述拿持结构还包括机械人，机械手安装在机器人上，并利用机械手对可对位于传送放置通道内部的晶圆拿持取放到多个放置腔体内部的盒体中。Still a further solution: the holding structure further includes a robot, the robot arm is installed on the robot, and the robot arm is used to hold and place the wafers located inside the transfer and placement channel into the boxes inside the multiple placement cavities. .

本发明中：所述放置腔体内部盒体及晶圆进行50-120度的翻转。In the present invention, the box body and the wafer inside the placement cavity are turned over by 50-120 degrees.

再进一步的方案：所述放置腔体内部盒体及晶圆进行90度的翻转。A further solution: the inner box and the wafer in the placement cavity are turned over by 90 degrees.

本发明中：多个所述放置腔体为独立设置，并连通到ALD反应器，以用晶圆移动调整。In the present invention, a plurality of the placement cavities are independently arranged and communicated with the ALD reactor for adjustment by wafer movement.

本发明中：多个所述ALD反应器为分开设置，用以分开完成镀膜。In the present invention, a plurality of the ALD reactors are arranged separately to complete the coating separately.

本发明中：所述改进型ALD镀膜机，还包括翻转升降机构，所述翻转升降机构设置在放置腔体内部，并完成将放置腔体内部的晶圆移动到ALD反应器中进行单原子层沉积工艺反应。In the present invention, the improved ALD coating machine further includes an inversion lifting mechanism, which is arranged inside the placement cavity and completes the movement of the wafer inside the placement cavity into the ALD reactor for monoatomic layering Deposition process reaction.

本发明中：所述传送放置通道上设置有多个用于放置晶圆的装载盒。In the present invention, a plurality of loading boxes for placing wafers are arranged on the conveying and placing channel.

本发明中：所述放置腔体内部安装有用于形成真空的抽真空设备。In the present invention, a vacuuming device for forming a vacuum is installed inside the placing cavity.

因此，本发明改进型ALD镀膜机，包括在内部安装有拿持结构的传送放置通道，和多个放置腔体；其中，所述拿持结构可对位于传送放置通道内部的晶圆拿持取放到多个放置腔体内部的盒体中，营造真空环境后可对盒体及晶圆进行翻转；还包括多个ALD反应器，而放置腔体内部的晶圆移动到ALD反应器中进行单原子层沉积工艺反应；拿持结构对位于传送放置通道内部的晶圆拿持取放到多个放置腔体内部的盒体中，营造真空环境后对晶圆翻转并移动到ALD反应器中进行单原子层沉积工艺反应，进行镀膜；以及多个放置腔体和多个ALD反应器可同时进行多个晶圆镀膜，效率得以提高；同时，可对多个ALD反应器做不同的介电常数材料的生长，实现了多种材料工艺交替的镀膜处理，无需更换生产线，提高效率的基础上节省生产线的成本。Therefore, the improved ALD coating machine of the present invention includes a transfer and placement channel with a holding structure installed inside, and a plurality of placement cavities; wherein, the holding structure can hold the wafer located in the transfer and placement channel. It is placed in multiple boxes placed inside the cavity, and the boxes and wafers can be turned over after creating a vacuum environment; it also includes multiple ALD reactors, and the wafers placed inside the cavity are moved to the ALD reactor for processing. The single atomic layer deposition process reaction; the holding structure holds the wafers located inside the transfer and placement channels and places them in boxes inside multiple placement chambers, and after creating a vacuum environment, the wafers are turned over and moved to the ALD reactor Single atomic layer deposition process reaction, coating; and multiple placement chambers and multiple ALD reactors can simultaneously conduct multiple wafer coating, and the efficiency is improved; at the same time, multiple ALD reactors can be made with different dielectrics The growth of constant materials realizes the alternate coating treatment of various material processes, without the need to replace the production line, and saves the cost of the production line on the basis of improving efficiency.

附图说明Description of drawings

图1为本发明改进型ALD镀膜机的结构示意图。Fig. 1 is the structural schematic diagram of the improved ALD coating machine of the present invention.

图2为图1中机械人和金属盒体的装配结构示意图。FIG. 2 is a schematic diagram of the assembly structure of the robot and the metal box in FIG. 1 .

图3为图1中塑料盒体的结构示意图。FIG. 3 is a schematic structural diagram of the plastic box body in FIG. 1 .

图中：1-传送放置通道；2-放置腔体Ⅰ；3-放置腔体Ⅱ；4-ALD反应器Ⅰ；5-ALD反应器Ⅱ；6-金属盒体；7-塑料盒体。In the figure: 1-transmission and placement channel; 2-placement cavity I; 3-placement cavity II; 4-ALD reactor I; 5-ALD reactor II; 6-metal box; 7-plastic box.

具体实施方式Detailed ways

本发明的目的在于提供一种改进型ALD镀膜机，以解决目前市场上的ALD机台效率低的的问题。本发明提供如下技术方案：The purpose of the present invention is to provide an improved ALD coating machine to solve the problem of low efficiency of the ALD machines currently on the market. The present invention provides the following technical solutions:

本发明实施例中，如图1所示，一种改进型ALD镀膜机，包括在内部安装有拿持结构的传送放置通道1，和多个放置腔体；In the embodiment of the present invention, as shown in FIG. 1 , an improved ALD coating machine includes atransfer placement channel 1 with a holding structure installed inside, and a plurality of placement cavities;

其中，所述拿持结构可对位于传送放置通道1内部的晶圆拿持取放到多个放置腔体内部的盒体中，营造真空环境后对盒体及晶圆进行翻转；Wherein, the holding structure can hold and place the wafers located inside the conveying and placingchannel 1 into the boxes inside the multiple placement cavities, and then turn the boxes and wafers over after creating a vacuum environment;

还包括多个ALD反应器，而放置腔体内部晶圆移动到ALD反应器中进行单原子层沉积工艺反应；It also includes a plurality of ALD reactors, and the wafers inside the chamber are placed and moved to the ALD reactors for single atomic layer deposition process reactions;

本发明实施例中，拿持结构对位于传送放置通道1内部的晶圆拿持取放到多个放置腔体内部的盒体中，营造真空环境后对盒体及晶圆进行翻转并移动到ALD反应器中进行单原子层沉积工艺反应，进行镀膜；以及多个放置腔体和多个ALD反应器可同时进行多个晶圆镀膜，效率得以提高；同时，可对多个ALD反应器做不同的介电常数材料的生长，实现了多种材料工艺交替的镀膜处理，无需更换生产线，提高效率的基础上节省生产线的成本。In the embodiment of the present invention, the holding structure holds and places the wafers located inside the transfer andplacement channel 1 into the boxes inside the multiple placement cavities. After creating a vacuum environment, the boxes and wafers are turned over and moved to The single atomic layer deposition process reaction is carried out in the ALD reactor for coating; and multiple placement chambers and multiple ALD reactors can simultaneously conduct multiple wafer coating, and the efficiency is improved; at the same time, multiple ALD reactors can be used for coating. The growth of materials with different dielectric constants realizes the alternate coating treatment of various materials, without the need to replace the production line, and saves the cost of the production line on the basis of improving efficiency.

本发明实施例中，如图1和图2所示，所述拿持结构包括机械手，以用晶圆取放；进一步的优化，所述拿持结构还包括机械人，机械手安装在机器人上，并利用机械手对可对位于传送放置通道1内部的晶圆拿持取放到多个放置腔体内部的盒体中。其中，机械手可替换为夹持机构、或者托举机构，具体为哪种结构不作限制只要能满足利用该结构对可对位于传送放置通道1内部的晶圆拿持取放到多个放置腔体内部的盒体中即可；优选机械手。In the embodiment of the present invention, as shown in FIG. 1 and FIG. 2 , the holding structure includes a manipulator to pick and place wafers; for further optimization, the holding structure further includes a robot, and the manipulator is installed on the robot, The wafers located inside the conveying and placingchannel 1 can be held and placed into the cassettes inside the multiple placing cavities by using the robot pair. Among them, the manipulator can be replaced with a clamping mechanism or a lifting mechanism, and the specific structure is not limited as long as the structure can be used to hold and place the wafer located inside the transfer andplacement channel 1 into multiple placement cavities. It can be placed in the inner box body; preferably a manipulator.

本发明实施例中，如图1所示，所述放置腔体内部的盒体及晶圆进行50-120度的翻转；进一步的优化，所述放置腔体内部的盒体及晶圆进行90度的翻转。盒体可对晶圆进行的角度翻转的范围不作限制，只要能满足翻转后盒体将晶圆移动到ALD反应器中进行单原子层沉积工艺反应即可；其中，可对晶圆进行90度的翻转可以很好的进行翻转后，对晶圆整体移动到ALD反应器中进行单原子层沉积工艺反应。In the embodiment of the present invention, as shown in FIG. 1 , the box body and the wafer inside the placement cavity are turned over by 50-120 degrees; for further optimization, the box body and the wafer inside the placement cavity are rotated 90 degrees. degree of reversal. The range of the angle that the box body can flip the wafer is not limited, as long as the box body can move the wafer to the ALD reactor for the single atomic layer deposition process reaction after the flip; among them, the wafer can be rotated 90 degrees. The flipping can be done well after flipping, and the whole wafer is moved to the ALD reactor for single atomic layer deposition process reaction.

本发明实施例中，如图1所示，多个所述放置腔体为独立设置，并连通到ALD反应器，用以晶圆移动调整。其中，多个可以是2个、3个、4个.....，具体为多少不作限制，只要能满足独立设置，并连通到ALD反应器，以用晶圆移动调整即可；优化的，所述放置腔体设置有两个分别为放置腔体Ⅰ2和放置腔体Ⅱ3，放置腔体Ⅰ2和放置腔体Ⅱ3形成了独立的双腔，并连通到ALD反应器，以用晶圆移动调整。In the embodiment of the present invention, as shown in FIG. 1 , a plurality of the placement cavities are independently arranged and connected to the ALD reactor for adjustment of the movement of the wafer. Among them, the number of multiples can be 2, 3, 4..., the number is not limited, as long as the independent setting can be satisfied, and it can be connected to the ALD reactor for adjustment by wafer movement; the optimized , the placement cavity is provided with two placement cavity I2 and placement cavity II3, the placement cavity I2 and placement cavity II3 form an independent double cavity, and are connected to the ALD reactor to move the wafer with Adjustment.

本发明实施例中，如图1所示，多个所述ALD反应器为分开设置，用以分开完成镀膜。其中，多个可以是2个、3个、4个.....，具体为多少不作限制，只要能满足分开完成镀膜即可；优化的，所述ALD反应器设置有两个，分别为ALD反应器Ⅰ4和ALD反应器Ⅱ5，ALD反应器Ⅰ4和ALD反应器Ⅱ5可以分开完成镀膜，可分别对ALD反应器Ⅰ4和ALD反应器Ⅱ5做高介电常数（HK）和低介电常数材料（LK）的生长，实现了多种材料工艺交替的镀膜处理，无需更换生产线，提高效率的基础上节省生产线的成本。In the embodiment of the present invention, as shown in FIG. 1 , a plurality of the ALD reactors are arranged separately to complete the coating separately. Among them, the number of multiples can be 2, 3, 4..., the specific number is not limited, as long as the coating can be completed separately; optimized, the ALD reactor is provided with two, respectively ALD Reactor I4 and ALD Reactor II5, ALD Reactor I4 and ALD Reactor II5 can complete the coating separately, and can be used for ALD Reactor I4 and ALD Reactor II5 respectively. High dielectric constant (HK) and low dielectric constant materials The growth of (LK) realizes the alternate coating treatment of various material processes, without the need to replace the production line, and saves the cost of the production line on the basis of improving efficiency.

本发明实施例中，如图1所示，所述改进型ALD镀膜机，还包括翻转升降机构，所述翻转升降机构设置在放置腔体内部，并完成将放置腔体内部的盒体及晶圆移动到ALD反应器中进行单原子层沉积工艺反应。其中，翻转升降机构可以是气缸，也是液压缸，或者是电机带动的螺纹杆和螺母实现的螺纹传动升降等等；具体为哪种结构不作限制只要能满足完成将放置腔体内部的晶圆整体移动到ALD反应器中进行单原子层沉积工艺反应即可。In the embodiment of the present invention, as shown in FIG. 1 , the improved ALD coating machine further includes an overturning and lifting mechanism, and the overturning and lifting mechanism is arranged inside the placement cavity, and completes the placement of the box and the crystal inside the placement cavity. The circle moves into the ALD reactor for the monoatomic layer deposition process reaction. Among them, the overturning and lifting mechanism can be an air cylinder, a hydraulic cylinder, or a threaded drive lifting and lowering realized by a threaded rod and a nut driven by a motor, etc.; the specific structure is not limited as long as it can meet the requirements of completing the entire wafer to be placed inside the cavity. Move to the ALD reactor to carry out the single atomic layer deposition process reaction.

本发明实施例中，如图1和图3所示，所述传送放置通道1上设置有多个用于放置晶圆的装载盒，而装载盒为塑料盒体7；所述放置腔体内部的盒体为金属盒体6。其中，对于装载盒的材质和/或盒体的材质不作限制，优选的，载盒为塑料盒体7；放置腔体内部的盒体为金属盒体6。In the embodiment of the present invention, as shown in FIG. 1 and FIG. 3 , the conveying and placingchannel 1 is provided with a plurality of loading boxes for placing wafers, and the loading boxes areplastic boxes 7 ; the inside of the placing cavity is The box body is ametal box body 6 . The material of the loading box and/or the material of the box body is not limited. Preferably, the loading box is aplastic box body 7 ; the box body inside the cavity is ametal box body 6 .

本发明实施例中，如图1所示，所述放置腔体内部安装有用于盒体对晶圆形成真空的抽真空设备。其中，用于形成真空的抽真空设备可以是单极往复泵，也可以是离心式真空干泵，具体为哪种不作限制，只要能满足用于对放置腔体形成真空即可。In the embodiment of the present invention, as shown in FIG. 1 , a vacuuming device for vacuuming the wafer by the box body is installed inside the placement cavity. Wherein, the vacuuming device used for forming the vacuum may be a unipolar reciprocating pump or a centrifugal vacuum dry pump, which is not limited, as long as it can be used to form a vacuum for the placement cavity.

本发明改进型ALD镀膜机，包括在内部安装有拿持结构的传送放置通道1，和多个放置腔体；其中，所述拿持结构可对位于传送放置通道1内部的晶圆拿持取放到多个放置腔体内部的盒体中，抽真空后可对盒体及晶圆进行翻转；还包括多个ALD反应器，放置腔体内部的盒体及晶圆被移动到ALD反应器中进行单原子层沉积工艺反应；进而，拿持结构对位于传送放置通道1内部的晶圆拿持取放到多个放置腔体内部的盒体中，营造真空环境后对晶圆翻转并移动到ALD反应器中进行单原子层沉积工艺反应，进行镀膜；以及多个放置腔体和多个ALD反应器可同时进行多个晶圆镀膜，效率得以提高；同时，可对多个ALD反应器做不同的介电常数材料的生长，实现了多种材料工艺交替的镀膜处理，无需更换生产线，提高效率的基础上节省生产线的成本。The improved ALD coating machine of the present invention includes a transfer andplacement channel 1 with a holding structure installed inside, and a plurality of placement cavities; wherein, the holding structure can hold and remove the wafer located inside the transfer andplacement channel 1 It is placed in multiple boxes placed inside the cavity, and the boxes and wafers can be turned over after being evacuated; it also includes multiple ALD reactors, and the boxes and wafers placed inside the cavity are moved to the ALD reactor The single atomic layer deposition process reaction is carried out in the process; furthermore, the holding structure holds the wafer located in the transfer andplacement channel 1 and places it in a plurality of boxes inside the placement cavity, and then flips and moves the wafer after creating a vacuum environment. The single atomic layer deposition process reaction is carried out in the ALD reactor, and the coating is performed; and multiple placement chambers and multiple ALD reactors can simultaneously perform multiple wafer coating, and the efficiency is improved; at the same time, multiple ALD reactors can be used. The growth of materials with different dielectric constants realizes the alternate coating treatment of various material processes, without the need to replace the production line, and saves the cost of the production line on the basis of improving efficiency.

上面对本发明的较佳实施方式作了详细说明，但是本发明并不限于上述实施方式，在本领域的普通技术人员所具备的知识范围内，还可以在不脱离本发明宗旨的前提下作出各种变化。The preferred embodiments of the present invention have been described in detail above, but the present invention is not limited to the above-mentioned embodiments. Within the scope of knowledge possessed by those of ordinary skill in the art, various aspects can also be made without departing from the purpose of the present invention. kind of change.

Claims (10)

Translated fromChinese

1.一种改进型ALD镀膜机，其特征在于，1. an improved ALD coating machine, is characterized in that,包括在内部安装有拿持结构的传送放置通道，和多个放置腔体；其中，It includes a transfer and placement channel with a holding structure installed inside, and a plurality of placement cavities; wherein,所述拿持结构可对位于传送放置通道内部的晶圆拿持取放到多个放置腔体内部的盒体中，营造真空环境后对盒体及晶圆进行翻转；The holding structure can hold and place the wafers located in the conveying and placing channels into the boxes inside the multiple placement cavities, and the boxes and the wafers can be turned over after creating a vacuum environment;还包括多个ALD反应器，而放置腔体内部的盒体将晶圆移动到ALD反应器中进行单原子层沉积工艺反应。A plurality of ALD reactors are also included, and a cassette placed inside the chamber moves the wafers into the ALD reactors for single atomic layer deposition process reactions.2.根据权利要求1所述的一种改进型ALD镀膜机，其特征在于，所述拿持结构包括机械手，用以晶圆取放。2 . The improved ALD coating machine according to claim 1 , wherein the holding structure comprises a manipulator for picking and placing wafers. 3 .3.根据权利要求2所述的一种改进型ALD镀膜机，其特征在于，所述拿持结构还包括机械人，机械手安装在机器人上，并利用机械手对位于传送放置通道内部的晶圆拿持取放到多个放置腔体内部的盒体中。3. A kind of improved ALD coating machine according to claim 2, is characterized in that, described holding structure also comprises robot, and the robot arm is installed on the robot, and utilizes the robot arm to hold the wafer located in the inside of the transmission and placement channel. Hold and place into multiple boxes that are placed inside the cavity.4.根据权利要求1所述的一种改进型ALD镀膜机，其特征在于，所述放置腔体内部的盒体及晶圆进行50-120度的翻转。4 . The improved ALD coating machine according to claim 1 , wherein the box body and the wafer placed inside the cavity are turned over by 50-120 degrees. 5 .5.根据权利要求4所述的一种改进型ALD镀膜机，其特征在于，所述放置腔体内部的盒体及晶圆进行90度的翻转。5 . The improved ALD coating machine according to claim 4 , wherein the box body and the wafer inside the cavity are turned 90 degrees. 6 .6.根据权利要求1所述的一种改进型ALD镀膜机，其特征在于，多个所述放置腔体为独立设置，并连通到ALD反应器，以用晶圆移动调整。6 . The improved ALD coating machine according to claim 1 , wherein a plurality of the placement cavities are independently set and communicated to the ALD reactor for adjustment by wafer movement. 7 .7.根据权利要求1所述的一种改进型ALD镀膜机，其特征在于，多个所述ALD反应器为分开设置，用以分开完成镀膜。7 . The improved ALD coating machine according to claim 1 , wherein a plurality of the ALD reactors are arranged separately to complete the coating separately. 8 .8.根据权利要求1-7任一所述的一种改进型ALD镀膜机，其特征在于，所述改进型ALD镀膜机，还包括翻转升降机构，所述翻转升降机构设置在放置腔体内部，并完成将放置腔体内部的晶圆移动到ALD反应器中进行单原子层沉积工艺反应。8. An improved ALD coating machine according to any one of claims 1-7, characterized in that, the improved ALD coating machine further comprises an inversion lifting mechanism, and the inversion lifting mechanism is arranged inside the placement cavity , and move the wafer placed inside the cavity to the ALD reactor for single atomic layer deposition process reaction.9.根据权利要求1-7任一所述的一种改进型ALD镀膜机，其特征在于，所述传送放置通道上设置有多个用于放置晶圆的装载盒。9. An improved ALD coating machine according to any one of claims 1-7, characterized in that, a plurality of loading boxes for placing wafers are provided on the conveying and placing channel.10.根据权利要求1-7任一所述的一种改进型ALD镀膜机，其特征在于，所述放置腔体内部安装有用于形成真空的抽真空设备。10. An improved ALD coating machine according to any one of claims 1-7, wherein a vacuuming device for forming a vacuum is installed inside the placement cavity.

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