CN111326390A - Radio frequency electrode assembly and plasma processing apparatus - Google Patents
Radio frequency electrode assembly and plasma processing apparatusDownload PDFInfo
- Publication number
- CN111326390A CN111326390ACN201910600861.6ACN201910600861ACN111326390ACN 111326390 ACN111326390 ACN 111326390ACN 201910600861 ACN201910600861 ACN 201910600861ACN 111326390 ACN111326390 ACN 111326390A
- Authority
- CN
- China
- Prior art keywords
- fluid channel
- fluid
- ring
- region
- plasma processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000012545processingMethods0.000titleclaimsabstractdescription68
- 239000012530fluidSubstances0.000claimsabstractdescription384
- 239000000758substrateSubstances0.000claimsabstractdescription96
- NJPPVKZQTLUDBO-UHFFFAOYSA-NnovaluronChemical compoundC1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1FNJPPVKZQTLUDBO-UHFFFAOYSA-N0.000claimsabstractdescription4
- 238000006243chemical reactionMethods0.000claimsdescription23
- 230000008878couplingEffects0.000claimsdescription17
- 238000010168coupling processMethods0.000claimsdescription17
- 238000005859coupling reactionMethods0.000claimsdescription17
- 239000007789gasSubstances0.000claimsdescription11
- 239000000463materialSubstances0.000claimsdescription10
- 230000007423decreaseEffects0.000claimsdescription9
- 230000003247decreasing effectEffects0.000claimsdescription8
- 238000005259measurementMethods0.000claimsdescription8
- 239000012774insulation materialSubstances0.000claimsdescription6
- 238000007789sealingMethods0.000claimsdescription6
- 239000012495reaction gasSubstances0.000claimsdescription5
- 230000001939inductive effectEffects0.000claimsdescription4
- 239000004696Poly ether ether ketoneSubstances0.000claimsdescription3
- 239000004697PolyetherimideSubstances0.000claimsdescription3
- 239000004642PolyimideSubstances0.000claimsdescription3
- 239000004809TeflonSubstances0.000claimsdescription3
- 229920006362Teflon®Polymers0.000claimsdescription3
- PNEYBMLMFCGWSK-UHFFFAOYSA-Naluminium oxideInorganic materials[O-2].[O-2].[O-2].[Al+3].[Al+3]PNEYBMLMFCGWSK-UHFFFAOYSA-N0.000claimsdescription3
- 229920002530polyetherether ketonePolymers0.000claimsdescription3
- 229920001601polyetherimidePolymers0.000claimsdescription3
- 229920001721polyimidePolymers0.000claimsdescription3
- 239000010453quartzSubstances0.000claimsdescription3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-Nsilicon dioxideInorganic materialsO=[Si]=OVYPSYNLAJGMNEJ-UHFFFAOYSA-N0.000claimsdescription3
- 239000011810insulating materialSubstances0.000claims1
- 238000009826distributionMethods0.000abstractdescription14
- 229920000642polymerPolymers0.000abstractdescription12
- 238000000034methodMethods0.000description18
- 230000009286beneficial effectEffects0.000description12
- 238000010586diagramMethods0.000description9
- 238000009616inductively coupled plasmaMethods0.000description7
- 239000007788liquidSubstances0.000description7
- 238000012546transferMethods0.000description7
- 101100134058Caenorhabditis elegans nth-1 geneProteins0.000description4
- 239000007787solidSubstances0.000description3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-NSiliconChemical compound[Si]XUIMIQQOPSSXEZ-UHFFFAOYSA-N0.000description2
- 239000000110cooling liquidSubstances0.000description2
- 230000000694effectsEffects0.000description2
- 238000009413insulationMethods0.000description2
- 239000004065semiconductorSubstances0.000description2
- 229910052710siliconInorganic materials0.000description2
- 239000010703siliconSubstances0.000description2
- 230000004888barrier functionEffects0.000description1
- 230000015572biosynthetic processEffects0.000description1
- 238000011109contaminationMethods0.000description1
- 238000013461designMethods0.000description1
- 230000005684electric fieldEffects0.000description1
- 238000010292electrical insulationMethods0.000description1
- 230000005672electromagnetic fieldEffects0.000description1
- 230000002349favourable effectEffects0.000description1
- 230000001976improved effectEffects0.000description1
- 230000006698inductionEffects0.000description1
- 238000003754machiningMethods0.000description1
- 238000004519manufacturing processMethods0.000description1
- 238000012986modificationMethods0.000description1
- 230000004048modificationEffects0.000description1
- 238000009832plasma treatmentMethods0.000description1
- 238000003672processing methodMethods0.000description1
- HBMJWWWQQXIZIP-UHFFFAOYSA-Nsilicon carbideChemical compound[Si+]#[C-]HBMJWWWQQXIZIP-UHFFFAOYSA-N0.000description1
- 229910010271silicon carbideInorganic materials0.000description1
- 239000007921spraySubstances0.000description1
- 230000008093supporting effectEffects0.000description1
Images
Classifications
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32522—Temperature
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Treatment Of Fiber Materials (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
The present application claims priority from the chinese patent application filed on 2018, 12, 17, under the name of "rf electrode assembly, plasma processing device", by the chinese patent office, application No. 201811543565.9, the entire contents of which are incorporated herein by reference.
Technical Field
The invention relates to the technical field of semiconductor equipment, in particular to a radio-frequency electrode assembly for plasma processing equipment and the plasma processing equipment.
Background
In the field of semiconductor manufacturing, it is often necessary to perform plasma processing on a substrate to be processed. The process of plasma treating the substrate to be treated needs to be carried out in a plasma treatment apparatus.
Plasma processing apparatus includes a vacuum reaction chamber having a susceptor for supporting a substrate to be processed disposed therein, the susceptor generally including a base and an electrostatic chuck disposed above the susceptor for holding the substrate.
However, it is difficult for the existing plasma processing apparatus to adjust the polymer distribution in the edge region of the substrate to be processed.
Disclosure of Invention
In view of the above, the present invention provides a radio frequency electrode assembly for a plasma processing apparatus and a plasma processing apparatus capable of adjusting polymer distribution in an edge region of a substrate to be processed.
In order to solve the above technical problem, the present invention provides a radio frequency electrode assembly for a plasma processing apparatus, comprising: the device comprises a base, a first fluid channel and a second fluid channel, wherein the first fluid channel is arranged in the base and is connected with a first fluid source; an electrostatic chuck on the pedestal for placing a substrate to be processed thereon; a focus ring located at a periphery of the electrostatic chuck; the heat conduction ring is positioned around the base and at least partially surrounds the base, the heat conduction ring is positioned below the focusing ring, a second fluid channel is arranged in the heat conduction ring and is connected with a second fluid source, and heat conduction can be carried out between the heat conduction ring and the focusing ring.
Optionally, a gap is provided between the thermally conductive ring and the base.
Optionally, the width of the gap is greater than or equal to 0.5 millimeters.
Optionally, the gap is filled with a heat insulation material layer; the material of the thermal insulation material layer comprises: teflon or polyetherimide or polyetheretherketone or polyimide.
Optionally, the method further comprises: a thermally conductive coupling ring between the focus ring and the thermally conductive ring; a thermally conductive structure located between the thermally conductive coupling ring and the thermally conductive ring; a bottom ground ring surrounding the heat conductive ring; an insulating ring between the bottom ground ring and the heat conductive ring, the insulating ring surrounding the heat conductive ring.
Optionally, the material of the thermally conductive coupling ring includes: alumina or quartz.
Optionally, the method further comprises: a bottom plate located below the base.
Optionally, the bottom plate and the heat conductive ring are connected to each other, or the bottom plate and the heat conductive ring are separated from each other.
Optionally, the second fluid channel sequentially includes N regions along a circumferential direction, where N is a natural number greater than or equal to 1, a first region of the second fluid channel is connected to the fluid input port, an nth region of the second fluid channel is connected to the fluid output port, and the second fluid source enters the second fluid channel from the fluid input port and exits the second fluid channel from the fluid output port; the electrostatic chuck comprises a first bearing surface, and the first bearing surface is used for bearing a substrate to be processed.
Optionally, each zone of the second fluid passageway is of equal size in a direction perpendicular to the first bearing surface; the distance from the top of each zone of the second fluid channel to the bottom of the focus ring is equal.
Optionally, in a direction perpendicular to the first carrying surface, each zone of the second fluid channel is equal in size, and distances from the first zone of the second fluid channel to the nth zone of the second fluid channel to the bottom of the focus ring decrease sequentially.
Optionally, in a direction perpendicular to the first carrying surface, each area of the second fluid channel is equal in size, distances from the first area of the second fluid channel to the top of the nth-1 area of the second fluid channel to the bottom of the focus ring decrease in sequence, and a distance from the top of the nth area of the second fluid channel to the bottom of the focus ring is greater than a distance from the top of the nth-1 area of the second fluid channel to the bottom of the focus ring.
Optionally, the sizes of the first region of the second fluid channel to the nth region of the second fluid channel sequentially increase along the direction perpendicular to the first bearing surface; the distance from the first area of the second fluid channel to the bottom of the Nth area of the second fluid channel to the bottom of the focusing ring is equal; the distance from the first area of the second fluid channel to the top of the Nth area of the second fluid channel to the bottom of the focusing ring is reduced in sequence.
Optionally, in a direction perpendicular to the first carrying surface, the sizes of a first region of a second fluid channel to an N-1 region of the second fluid channel sequentially increase, and the size of the N region of the second fluid channel is smaller than that of the N-1 region of the second fluid channel; the distance from the first area of the second fluid channel to the bottom of the Nth area of the second fluid channel to the bottom of the focusing ring is equal; the distance from the first area of the second fluid channel to the top of the N-1 area of the second fluid channel to the bottom of the focusing ring is reduced in sequence, and the distance from the top of the N-1 area of the second fluid channel to the bottom of the focusing ring is larger than the distance from the top of the N-1 area of the second fluid channel to the bottom of the focusing ring.
Optionally, the tops of the first region of the second fluid channel to the N-1 th region of the second fluid channel rise smoothly or in a stepped manner.
Optionally, the second fluid passage has a number of turns of 1 turn or more than 1 turn.
Optionally, the method further comprises: the measuring unit is used for measuring the size of a groove formed in the edge area of the substrate to be processed along the direction parallel to the surface of the substrate to be processed; the temperature of the second fluid source is increased when the measurement unit measures that the dimension of the trench along the direction parallel to the surface of the substrate to be processed is greater than a target dimension, and the temperature of the second fluid source is decreased when the measurement unit measures that the dimension of the trench along the direction parallel to the surface of the substrate to be processed is less than the target dimension.
Accordingly, the present invention also provides a plasma processing apparatus comprising: a vacuum reaction chamber; a base positioned at the downstream of the vacuum reaction cavity, wherein a first fluid channel is arranged in the base and is connected with a first fluid source; an electrostatic chuck on the base for placing a substrate to be processed thereon; a focus ring located at a periphery of the electrostatic chuck; a heat conductive ring positioned around the base, the heat conductive ring being positioned below the focus ring and at least partially surrounding the base, a second fluid channel being disposed within the heat conductive ring, the second fluid channel being connected to a second fluid source, the heat conductive ring being capable of conducting heat with the focus ring; and the gas inlet device is positioned at the top of the vacuum reaction cavity and is used for providing reaction gas into the vacuum reaction cavity.
Optionally, the second fluid channel sequentially includes N regions along the circumferential direction, where N is a natural number greater than or equal to 1, a first region channel of the second fluid is connected to the fluid input port, an nth region of the second fluid channel is connected to the fluid output port, and the second fluid source enters the second fluid channel from the fluid input port and exits the second fluid channel from the fluid output port; the electrostatic chuck comprises a first bearing surface, and the first bearing surface is used for bearing a substrate to be processed.
Optionally, each zone of the second fluid passageway is of equal size in a direction perpendicular to the first bearing surface; the distance from the top of each zone of the second fluid channel to the bottom of the focus ring is equal.
Optionally, in a direction perpendicular to the first carrying surface, each zone of the second fluid channel is equal in size, and distances from the first zone of the second fluid channel to the nth zone of the second fluid channel to the bottom of the focus ring decrease sequentially.
Optionally, in a direction perpendicular to the first carrying surface, each area of the second fluid channel is equal in size, distances from the first area of the second fluid channel to the top of the nth-1 area of the second fluid channel to the bottom of the focus ring decrease in sequence, and a distance from the top of the nth area of the second fluid channel to the bottom of the focus ring is greater than a distance from the top of the nth-1 area of the second fluid channel to the bottom of the focus ring.
Optionally, along a direction perpendicular to the first bearing surface, the dimensions of the first region of the second fluid channel to the nth region of the second fluid channel sequentially increase; the distance from the first area of the second fluid channel to the bottom of the Nth area of the second fluid channel to the bottom of the focusing ring is equal; the distance from the first area of the second fluid channel to the top of the Nth area of the second fluid channel to the bottom of the focusing ring is reduced in sequence.
Optionally, in a direction perpendicular to the first carrying surface, the sizes of a first region of a second fluid channel to an N-1 region of the second fluid channel sequentially increase, and the size of the N region of the second fluid channel is smaller than that of the N-1 region of the second fluid channel; the distance from the first area of the second fluid channel to the bottom of the Nth area of the second fluid channel to the bottom of the focusing ring is equal; the distance from the first area of the second fluid channel to the top of the N-1 area of the second fluid channel to the bottom of the focusing ring is reduced in sequence, and the distance from the top of the N-1 area of the second fluid channel to the bottom of the focusing ring is larger than the distance from the top of the N-1 area of the second fluid channel to the bottom of the focusing ring.
Optionally, the tops of the first region of the second fluid channel to the N-1 th region of the second fluid channel rise smoothly or in a stepped manner.
Optionally, the second fluid passage has a number of turns of 1 turn or more than 1 turn.
Optionally, the method further comprises: a bottom plate located below the base.
Optionally, the bottom plate and the heat conductive ring are interconnected; alternatively, the bottom plate and the heat conductive ring are separated from each other.
Optionally, the gas inlet device comprises a mounting substrate arranged below the insulating window of the vacuum reaction chamber and a gas spray header arranged below the mounting substrate; the plasma processing apparatus further includes: the radio frequency power source is connected with the base; a bias power source connected to the base.
Optionally, the sidewall of the vacuum reaction chamber comprises a second carrying surface; the plasma processing apparatus further includes: the annular lining comprises a side wall protection ring and a bearing ring for fixing the side wall protection ring on the second bearing surface; an insulating window located on the vacuum reaction chamber; an inductive coupling coil located on the insulating window; the radio frequency power source is connected with the inductive coupling coil; a bias power source connected to the base.
Optionally, the method further comprises: and the base and the electrostatic chuck are in a vacuum environment by the aid of a sealing groove in the upper surface and the lower surface of the heat conduction ring and a sealing gasket in the sealing groove.
Optionally, the method further comprises: the measuring unit is used for measuring the size of a groove formed in the edge area of the substrate to be processed along the direction parallel to the surface of the substrate to be processed; the temperature of the second fluid source is increased when the measurement unit measures that the dimension of the trench along the direction parallel to the surface of the substrate to be processed is greater than a target dimension, and the temperature of the second fluid source is decreased when the measurement unit measures that the dimension of the trench along the direction parallel to the surface of the substrate to be processed is less than the target dimension.
Compared with the prior art, the invention has the following beneficial effects:
in the radio frequency electrode assembly for the plasma processing equipment, the base is provided with the heat conduction ring at the periphery, the second fluid channel is arranged in the heat conduction ring and is connected with the second fluid source, and therefore, the temperature of the heat conduction ring can be adjusted by adjusting the temperature of the second fluid source. And the heat conduction ring and the focusing ring can conduct heat, so that the temperature control of the focusing ring can be realized by adjusting the temperature of the second fluid source, the temperature difference between the focusing ring and the edge of the substrate to be processed can be adjusted, the distribution of the polymer at the edge of the substrate to be processed can be adjusted, and a groove meeting the process requirement can be formed in the edge area of the substrate to be processed.
Further, still include: the measuring unit is used for measuring the size of a groove formed in the edge area of the substrate to be processed along the direction parallel to the surface of the substrate to be processed; when the measuring unit measures that the size of the groove along the direction parallel to the surface of the substrate to be processed is larger than the target size, the temperature of the second fluid source is increased, and when the measuring unit measures that the size of the groove along the direction parallel to the surface of the substrate to be processed is smaller than the target size, the temperature of the second fluid source is decreased, so that the size of the groove formed in the edge area of the substrate to be processed along the direction parallel to the surface of the substrate to be processed is favorably consistent with the target size.
Furthermore, the second fluid channel sequentially comprises N regions along the circumferential direction, N is a natural number greater than or equal to 1, the first region of the second fluid channel is connected with the fluid input port, the Nth region of the second fluid channel is connected with the fluid output port, and the second fluid source enters the second fluid channel from the fluid input port and flows out of the second fluid channel from the fluid output port. The second fluid source takes a certain amount of time to flow through the second fluid channel such that there is a temperature difference between the second fluid source at the fluid input port and the fluid output port. In order to reduce the poor temperature control capability of the second fluid source in the second fluid channels in different areas, the distance from the first area of the second fluid channel to the top of the N-1 th area of the second fluid channel to the bottom of the focusing ring is sequentially reduced, and the distance from the top of the N-1 th area of the second fluid channel to the bottom of the focusing ring is greater than the distance from the top of the N-1 th area of the second fluid channel to the bottom of the focusing ring, so that the temperature uniformity of different areas of the focusing ring is improved.
Drawings
FIG. 1 is a schematic diagram of a plasma processing apparatus including an RF electrode assembly according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of another RF electrode assembly for a plasma processing apparatus according to an embodiment of the present invention;
FIG. 3 is a schematic structural diagram of a radio frequency electrode assembly for a plasma processing apparatus according to another embodiment of the present invention;
FIG. 4 is a schematic structural diagram of a heat conductive ring according to an embodiment of the present invention;
FIG. 5 is a schematic illustration of a second fluid passage in a thermally conductive ring shown as a solid body in accordance with an embodiment of the present invention;
FIG. 6 is a schematic illustration of a second fluid passage in another embodiment of a heat transfer ring shown as a solid body;
FIG. 7 is a schematic structural view of a second fluid passage in a heat transfer ring according to another embodiment of the present invention.
Detailed Description
In order to solve the problem that the existing plasma processing equipment in the background art is difficult to adjust the polymer distribution of the edge area of a substrate to be processed, the invention provides a radio frequency electrode assembly for the plasma processing equipment and the plasma processing equipment, wherein the radio frequency electrode assembly for the plasma processing equipment comprises: the device comprises a base, a first fluid channel and a second fluid channel, wherein the first fluid channel is arranged in the base and is connected with a first fluid source; an electrostatic chuck on the pedestal; a focus ring located at a periphery of the electrostatic chuck; a heat conductive ring positioned around the susceptor, the heat conductive ring surrounding a portion of the susceptor, the heat conductive ring positioned below the focus ring, a second fluid channel disposed within the heat conductive ring, the second fluid channel connected to a second fluid source, the heat conductive ring and the focus ring capable of conducting heat therebetween. The plasma processing apparatus is capable of adjusting the distribution of a polymer in an edge region of a substrate to be processed.
In order to make the technical problems, technical solutions and technical effects of the present invention clearer and more complete, specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.
Fig. 1 is a schematic structural diagram of a plasma processing apparatus including an rf electrode assembly according to an embodiment of the present invention.
Referring to fig. 1, theplasma processing apparatus 21 includes: avacuum reaction chamber 24; asusceptor 11 disposed at the bottom of thevacuum chamber 24, wherein a first fluid passage A, B, C is disposed in thesusceptor 11, the first fluid passage A, B, C is connected to a first fluid source (not shown), and thesusceptor 11 is disposed in thevacuum chamber 24; anelectrostatic chuck 12 on thebase 11, theelectrostatic chuck 12 being used for carrying a substrate W to be processed; afocus ring 13 positioned at the periphery of theelectrostatic chuck 12; a heatconductive ring 142 positioned around thesusceptor 11, the heatconductive ring 142 at least partially surrounding thesusceptor 11, the heatconductive ring 142 positioned below thefocus ring 13, asecond fluid channel 15 positioned within the heatconductive ring 142, thesecond fluid channel 15 connected to a second fluid source (not shown), the heatconductive ring 142 capable of conducting heat with thefocus ring 13; and thegas inlet device 22 is positioned at the top of thevacuum reaction chamber 24, and thegas inlet device 22 is used for providing reaction gas into thevacuum reaction chamber 24.
In this embodiment, theplasma processing apparatus 21 is a capacitively-coupled plasma processing apparatus (CCP), and thegas inlet 22 includes: amounting substrate 221 disposed at the top of thevacuum reaction chamber 24, and agas shower head 222 disposed below themounting substrate 221. Thegas shower head 222 serves as an upper electrode, thebase 11 serves as a lower electrode, and a radio frequency power source is connected to the upper electrode or the lower electrode. The radio frequency signal generated by the radio frequency power source converts the reaction gas into plasma through the capacitance formed by the upper electrode and the lower electrode. The bias power source is connected to thesusceptor 11 so that the plasma is uniform toward the surface of thesusceptor 11. Thebase 11 is used for bearing a substrate to be processed, and therefore, the plasma is facilitated to move towards the surface of the substrate W to be processed, so that the substrate W to be processed is processed.
In other embodiments, the plasma processing apparatus includes: an inductively coupled plasma processing device (ICP); the sidewall of the vacuum reaction chamber comprises a second bearing surface, and the inductively coupled plasma processing apparatus further comprises: the annular lining comprises a side wall protection ring and a bearing ring for fixing the side wall protection ring on the second bearing surface; an insulating window located on the vacuum reaction chamber; an inductor coil positioned on the insulating window; the induction coil is connected with a radio frequency power source, so that the reaction gas is converted into plasma, the base is connected with a bias power source, the plasma moves towards the surface of the base, and the plasma is favorable for processing a substrate to be processed.
Thefocus ring 13 is located at the periphery of theelectrostatic chuck 12, and thefocus ring 13 can control the temperature, airflow and electric field distribution of the edge of the substrate W to be processed, thereby controlling the processing effect of the edge of the substrate W to be processed.
As an example, since the substrate W to be processed is generally a silicon substrate, the material of thefocus ring 13 includes silicon or silicon carbide, and thus, contamination of the substrate W to be processed by thefocus ring 13 can be reduced.
Theelectrostatic chuck 12 includes a first carrying surface D for carrying a substrate to be processed, theelectrostatic chuck 12 is disposed on asusceptor 11, and a first fluid passage A, B, C is disposed in thesusceptor 11, and the first fluid passage A, B, C is connected to a first fluid source, so that the temperature of the substrate to be processed can be adjusted by adjusting the temperature of the first fluid source. However, it is difficult to adjust the temperature of the edge region of the substrate to be treated by the first liquid source. The heatconductive ring 142 is provided with asecond fluid passage 15 therein, and thesecond fluid passage 15 is connected to a second fluid source. The temperature of theheat conduction ring 142 can be controlled by adjusting the temperature of the second fluid source, and the heat conduction can be performed between theheat conduction ring 142 and thefocus ring 13, so that the temperature of thefocus ring 13 can be controlled by adjusting the temperature of the second fluid source, and the temperature difference between thefocus ring 13 and the edge of the substrate W to be processed can be adjusted, so that the distribution of the polymer on the edge of the substrate W to be processed can be adjusted, and the formation of a groove meeting the process requirements in the edge area of the substrate W to be processed is facilitated.
Further comprising: a measuring unit for measuring the dimension of a groove formed in the edge area of the substrate W to be processed along the direction parallel to the surface of the substrate W to be processed; when the measuring unit measures that the dimension of the groove in the direction parallel to the surface of the substrate W to be processed is larger than the target dimension, the temperature of the second fluid source is increased, and when the measuring unit measures that the dimension of the groove in the direction parallel to the surface of the substrate W to be processed is smaller than the target dimension, the temperature of the second fluid source is decreased, thereby facilitating the dimension of the groove formed in the edge region of the substrate W to be processed in the direction parallel to the surface of the substrate W to be processed to coincide with the target dimension.
In this embodiment, the first fluid source is a first cooling liquid, and the second fluid source is a second cooling liquid.
In this embodiment, thesecond fluid channel 15 sequentially includes N regions along the circumferential direction, where N is a natural number greater than or equal to 1, the first region of thesecond fluid channel 15 is connected to the fluid input port, the nth region of thesecond fluid channel 15 is connected to the fluid output port, and the second fluid source enters thesecond fluid channel 15 from the fluid input port and exits thesecond fluid channel 15 from the fluid output port.
In this embodiment, the secondfluid passages 15 have equal size in each zone and equal distance from the top of each zone of the secondfluid passages 15 to the bottom of thefocus ring 13 along the direction perpendicular to the first carrying surface D. The processing method of the second fluid channel comprises the following steps; providing a first plate; forming asecond fluid channel 15 in the first plate, wherein the size of each area of thesecond fluid channel 15 is equal along the direction perpendicular to the first bearing surface D; a second sheet material is provided which is welded to the first sheet material and which seals all of the secondfluid passages 15. Since the dimension of each area of thesecond fluid channel 15 in the direction perpendicular to the first carrying surface D is equal, and the distance from the top of each area of thesecond fluid channel 15 to the bottom of thefocus ring 13 is equal, each area of thesecond fluid channel 15 can be processed and formed at the same time, thereby being beneficial to reducing the complexity and difficulty of forming thesecond fluid channel 15.
In this embodiment, a gap exists between the heatconductive ring 142 and thesusceptor 11, so that the heat of the heatconductive ring 142 on thesusceptor 11 is small, and thesusceptor 11 is used for bearing the substrate to be processed, thereby being beneficial to reducing the temperature influence on the central area of the substrate W to be processed.
In other embodiments, the thermally conductive ring is in contact with the susceptor.
In the present embodiment, the width of the gap is greater than or equal to 0.5 mm, so that the heat conduction capability between theheat conduction ring 142 and thesusceptor 11 is reduced.
In other embodiments, the width of the gap is less than 0.5 millimeters.
In this embodiment, the gap is filled with the thermalinsulation material layer 16, and the thermalinsulation material layer 16 has a strong thermal conductivity between the thermalconductive ring 142 and thesusceptor 11, so that the thermal influence of the thermalconductive ring 142 on thesusceptor 11 is smaller, which is beneficial to further reducing the temperature influence on the central region of the substrate W to be processed.
The material of the thermalinsulation material layer 16 includes: teflon or polyetherimide or polyetheretherketone or polyimide.
In this embodiment, the method further includes: and abottom plate 141, both ends of thebottom plate 141 are connected to the heatconductive ring 142, and thebottom plate 141 and the heatconductive ring 142 are integrally formed. Thebottom plate 141 and the heatconductive ring 142 constitute the accessory plate 14.
In this embodiment, the method further includes: a thermallyconductive coupling ring 17 located between thefocus ring 13 and the thermallyconductive ring 142. The heatconductive coupling ring 17 can promote heat conduction between the heatconductive ring 142 and thefocus ring 13, and thus the temperature of thefocus ring 13 can be rapidly adjusted by the heatconductive coupling ring 17. As an example, the heatconductive coupling ring 17 is generally made of a material having good heat conductivity and electrical insulation, for example, the material of the heatconductive coupling ring 17 includes: alumina or quartz.
In other embodiments, the thermally conductive coupling ring is not included.
In this embodiment, the method further includes: a thermally conductive structure (not shown in fig. 1) is disposed between the thermallyconductive coupling ring 17 and the thermallyconductive ring 142. The heat conduction structure is used to further improve the heat conduction between theheat conduction ring 142 and thefocus ring 13.
In other embodiments, the thermally conductive structure is not included.
In this embodiment, the rf electrode assembly for a plasma processing apparatus may further include: abottom ground ring 18, saidbottom ground ring 18 surrounding the heatconductive ring 142, saidbottom ground ring 18 capable of conducting coupled RF current in the vacuum reaction chamber to ground.
In this embodiment, the rf electrode assembly for a plasma processing apparatus may further include: an insulatingring 19 disposed between thebottom ground ring 18 and the heatconductive ring 142. Wherein the insulatingring 19 and thebottom ground ring 18 surround the heatconductive ring 142. To accommodate the heatconductive ring 142, the insulatingring 19 andbottom ground ring 18 are moved away from thesusceptor 11.
In this embodiment, the rf electrode assembly for a plasma processing apparatus further includes: anedge ring 110 disposed at the periphery of thefocus ring 13. Theedge ring 110 is used to consolidate the electromagnetic field distribution in the edge region of thevacuum reaction chamber 24.
In other embodiments, the edge ring is not included.
In this embodiment, the plasma processing apparatus includes a radio frequency electrode assembly for a plasma processing apparatus, the radio frequency electrode assembly for a plasma processing apparatus including: a base 11, a first fluid passage A, B, C is arranged in thebase 11, and the first fluid passage A, B, C is connected with a first fluid source; anelectrostatic chuck 12 on thesusceptor 11, theelectrostatic chuck 12 for carrying a substrate to be processed; afocus ring 13 positioned at the periphery of theelectrostatic chuck 12; a heatconductive ring 142 positioned around thesusceptor 11, the heatconductive ring 142 surrounding a portion of thesusceptor 11, the heatconductive ring 142 being positioned below thefocus ring 13, asecond fluid channel 15 being positioned within the heatconductive ring 13, thesecond fluid channel 15 being connected to a second fluid source, the heatconductive ring 142 being thermally conductive with thefocus ring 13.
Fig. 2 is a schematic structural diagram of another rf electrode assembly for a plasma processing apparatus according to an embodiment of the present invention.
The difference between the rf electrode assembly of this embodiment and the rf electrode assembly of the embodiment shown in fig. 1 is only that: the distance from the first region of thesecond fluid channel 15 to the top of the nth region 1 of thesecond fluid channel 15 to the bottom of thefocus ring 13 decreases in sequence, and the distance from the top of the nth region of thesecond fluid channel 15 to the bottom of thefocus ring 13 is greater than the distance from the top of the nth region 1 of thesecond fluid channel 15 to the bottom of thefocus ring 13, which means that: the first region of thesecond fluid channel 15 is connected to the fluid input port, the nth region of thesecond fluid channel 15 is connected to the fluid output port, and the second fluid source flows into thesecond fluid channel 15 from the fluid input port and flows out of the fluid output port after flowing through each region of thesecond fluid channel 15. It takes a certain amount of time for the second fluid source to flow through thesecond fluid channel 15 such that there is a temperature difference between the fluid input port and the second fluid source at the fluid output port. In order to reduce the temperature control capability of the second fluid source in thesecond fluid channel 15 in different regions, the distances from the top of thesecond fluid channel 15 to the bottom of thefocus ring 13 are sequentially reduced from the first region to the N-1 region. However, since the fluid output port is closer to the fluid input port, the second fluid source of the fluid input port affects the temperature of the second fluid source of the fluid output port, so that the temperature difference between the second fluid source of the fluid input port and the second fluid source of the fluid output port is not too large, and the distance from the top of the nth region N to the bottom of the focusingring 13 is greater than the distance from the top of the nth region N-1 to the bottom of the focusingring 13, which is beneficial to improving the temperature uniformity of different regions of the focusingring 13.
In addition, although it is difficult to adjust the temperature of the edge region of the substrate W to be processed by using the first fluid source, thesecond fluid channel 15 is provided in the heatconductive ring 142, and the second fluid source in thesecond fluid channel 15 can adjust the temperature of thefocus ring 13, so that the temperature difference between thefocus ring 13 and the edge of the substrate W to be processed can be adjusted, and therefore, the distribution of the polymer at the edge of the substrate W to be processed can be adjusted, which is beneficial for forming a groove in the edge region of the substrate W to be processed to meet the process requirements.
In the present embodiment, the dimensions of each sector of the secondfluid channels 15 are equal along a direction perpendicular to said first bearing surface D.
In other embodiments, each zone of the second fluid channel has the same size along the direction perpendicular to the first bearing surface, and the distance from the first zone of the second fluid channel to the top of the nth zone of the second fluid channel to the bottom of the focus ring decreases sequentially.
In this embodiment, the plasma processing apparatus includes: a capacitively coupled plasma processing device (CCP) or an inductively coupled plasma processing device (ICP).
Fig. 3 is a schematic structural diagram of a radio frequency electrode assembly for a plasma processing apparatus according to another embodiment of the present invention.
The present embodiment is different from the embodiment shown in fig. 2 in that: along the direction perpendicular to the first bearing surface D, the sizes of a first area of thesecond fluid channel 20 and an N-1 area of thesecond fluid channel 20 are sequentially increased, and the size of the N area of thesecond fluid channel 20 is smaller than that of the N-1 area of thesecond fluid channel 20; the present embodiment is the same as the embodiment shown in fig. 2 in that: the distance from the first region of thesecond fluid channel 20 to the top of the nth region 1 of thesecond fluid channel 20 to the bottom of thefocus ring 13 decreases in sequence, and the distance from the top of the nth region of thesecond fluid channel 20 to the bottom of thefocus ring 13 is greater than the distance from the top of the nth region 1 of thesecond fluid channel 20 to the bottom of thefocus ring 13. The significance of the distance from the top of the secondliquid channel 20 to the bottom of thefocus ring 13 is the same as that of the embodiment shown in fig. 2, and is not described herein again.
Although it is difficult to adjust the temperature of the edge region of the substrate W to be processed by using the first fluid source, thesecond fluid channel 20 is provided in the heatconductive ring 142, and the second fluid source in thesecond fluid channel 20 can adjust the temperature of the focusingring 13, so that the temperature difference between the focusingring 13 and the edge of the substrate W to be processed can be adjusted, and therefore, the polymer distribution at the edge of the substrate W to be processed can be adjusted, which is beneficial for forming a groove meeting the process requirements in the edge region of the substrate W to be processed.
In this embodiment, the bottom of each zone of thesecond fluid channel 20 is equidistant from the bottom of thefocus ring 13.
In this embodiment, thebottom plate 21 and the heatconductive ring 142 are separate from each other. Because thebottom plate 21 is located at the bottom of thesusceptor 11 and the heatconductive ring 142 is separated from thebottom plate 21, the influence between the heatconductive ring 142 and thesusceptor 11 is small, which is beneficial to reducing the temperature influence of the heatconductive ring 142 on the central region of the substrate to be processed.
In other embodiments, thebottom plate 21 and the heatconductive ring 142 are interconnected.
In this embodiment, the method further includes: a thermal insulation layer (not shown) is provided between thebottom plate 21 and the heatconductive ring 142, and the thermal insulation layer is used for isolating thebottom plate 21 from the heatconductive ring 142. The thermal barrier layer is configured to further reduce thermal conduction betweenheat transfer ring 142 andbottom plate 21, which is beneficial to further reduce the temperature impact ofheat transfer ring 142 on the central region of the substrate to be processed.
In other embodiments, the insulating layer is not formed.
In this embodiment, the plasma processing apparatus includes: a capacitively coupled plasma processing device (CCP) or an inductively coupled plasma processing device (ICP).
The heatconductive ring 142 is described in detail below with reference to fig. 4.
Fig. 4 is a schematic structural diagram of a heat conductive ring according to an embodiment of the present invention.
In the present embodiment, the heatconductive ring 142 includes afirst ring portion 142a located between the susceptor 11 (see fig. 3) and the insulating ring 19 (see fig. 3) and asecond ring portion 142b extending from thefirst ring portion 142a to a portion below the bottom plate 21 (see fig. 3), so that the heatconductive ring 142 is easy to mount.
In other embodiments, the thermally conductive ring is only the first ring portion.
In this embodiment, the distance from the first region of thesecond fluid channel 20 to the top of the nth region-1 of thesecond fluid channel 20 is greater than the distance from the top of the nth region of thesecond fluid channel 20 to the bottom of the focus ring because: the first region of thesecond fluid channel 20 is connected to the fluid input port, and the nth region of thesecond fluid channel 20 is connected to the fluid output port, that is: the nth region of thesecond fluid channel 20 is close to the first region of thesecond fluid channel 20, and the temperature of the second fluid source in the first region of thesecond fluid channel 20 is lower, and the second fluid source in the first region will affect the temperature of the second fluid source in the nth region, so that the temperature of the second fluid source in the nth region is not too high, the temperature control capability of the second fluid source in the nth region to the corresponding focusingring 13 is stronger, and the distance from the top of thesecond fluid channel 20 in the nth region to the bottom of the focusing ring is not necessarily too small.
In this embodiment, thesecond fluid passage 20 is a ring.
Thesecond fluid channel 20 of fig. 4 is described in detail below, with particular reference to fig. 5-7.
FIG. 5 is a schematic structural view of a second liquid passage in a heat transfer ring shown as a solid body according to an embodiment of the present invention.
Thesecond liquid passage 20 includes N blocks in order in the circumferential direction Y, where N is a natural number equal to or greater than 1.
In this embodiment, the secondliquid channel 20 includes 7 regions, and the first region C of the secondliquid channel 20 is described as an example1To the sixth zone C of thesecond fluid channel 206The top of thesecond fluid channel 20 is stepped and ascends, and the seventh area C of the second fluid channel7The distance from the top to the bottom of thefocus ring 13 is greater than the sixth area C of thesecond fluid channel 206Distance from top to bottom of focus ring. The depth setting significance of the 7 regions of thesecond fluid channel 20 is the same as the depth setting significance of the N regions of the second fluid channel in the embodiment of fig. 4, and details thereof are not repeated herein.
The first region C1 of thesecond fluid passageway 20 is connected to thefluid input port 20a and the nth region of thesecond fluid passageway 20 is connected to thefluid output port 20 b.
Although it is difficult to adjust the temperature of the edge region of the substrate W to be processed by using the first fluid source, thesecond fluid channel 20 is provided in the heatconductive ring 142, and the second fluid source in thesecond fluid channel 20 can adjust the temperature of thefocus ring 13, so that the temperature difference between thefocus ring 13 and the edge of the substrate W to be processed can be adjusted, and therefore, the polymer distribution at the edge of the substrate W to be processed can be adjusted, which is beneficial for forming a groove in the edge region of the substrate W to be processed to meet the process requirements.
In the present embodiment, two adjacent zones are connected by a connecting zone D, the connecting zone D has an included angle with the horizontal plane, and the first zone C1A second region C2And a third region C3And the fourth zone C4The fifth zone C5And the sixth zone C6And the top of the seventh zone C7 is parallel to the horizontal plane. Such a design of thesecond fluid channel 30 is advantageous for reducingDifficulty in machining thesecond fluid passageway 30.
In other embodiments, the top of the second fluid passage section is angled from horizontal.
In this embodiment, thesecond fluid passage 30 is a ring.
FIG. 6 is a schematic diagram of a second liquid passage in a heat transfer ring according to another embodiment of the present invention.
The present embodiment is different from the embodiment shown in fig. 5 in that: thesecond fluid passage 30 first region C1To the sixth zone C of the second fluid channel6The top rises smoothly so that the second fluid source flows more smoothly in thesecond fluid channel 30.
The first region C1 of thesecond fluid passageway 30 is connected to thefluid input port 30a and the Nth region of thesecond fluid passageway 30 is connected to thefluid output port 30 b.
Although it is difficult to adjust the temperature of the edge region of the substrate W to be processed by using the first fluid source, thesecond fluid channel 30 is provided in the heatconductive ring 142, and the second fluid source in thesecond fluid channel 30 can adjust the temperature of thefocus ring 13, so that the temperature difference between thefocus ring 13 and the edge of the substrate W to be processed can be adjusted, and therefore, the polymer distribution at the edge of the substrate W to be processed can be adjusted, which is beneficial for forming a groove in the edge region of the substrate W to be processed to meet the process requirements.
In this embodiment, thesecond fluid passage 30 is a ring.
FIG. 7 is a schematic structural view of a second fluid passage in a heat transfer ring according to another embodiment of the present invention.
In this embodiment, thesecond fluid channel 40 has two turns, so that the contact area between thesecond fluid channel 40 and thefocus ring 13 is larger, and the temperature control capability of thesecond fluid channel 40 on thefocus ring 13 is stronger.
Although it is difficult to adjust the temperature of the edge region of the substrate W to be processed by using the first fluid source, thesecond fluid channel 40 is provided in the heatconductive ring 142, and the second fluid source in thesecond fluid channel 40 can adjust the temperature of thefocus ring 13, so that the temperature difference between thefocus ring 13 and the edge of the substrate W to be processed can be adjusted, and therefore, the polymer distribution at the edge of the substrate W to be processed can be adjusted, which is beneficial for forming a groove in the edge region of the substrate W to be processed to meet the process requirements.
In other embodiments, the second fluid passageway has more than two turns.
Although the present invention is disclosed above, the present invention is not limited thereto. Various changes and modifications may be effected therein by one skilled in the art without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (32)
1. A radio frequency electrode assembly for a plasma processing apparatus, comprising:
the device comprises a base, a first fluid channel and a second fluid channel, wherein the first fluid channel is arranged in the base and is connected with a first fluid source;
an electrostatic chuck on the pedestal for placing a substrate to be processed thereon;
a focus ring located at a periphery of the electrostatic chuck;
a heat conductive ring located around the base, the heat conductive ring located below the focus ring and at least partially surrounding the base, a second fluid channel disposed within the heat conductive ring, the second fluid channel connected to a second fluid source, the heat conductive ring and the focus ring capable of conducting heat therebetween.
2. The radio frequency electrode assembly of claim 1, wherein the thermally conductive ring has a gap with the base.
3. The radio frequency electrode assembly of claim 2, wherein the gap has a width greater than or equal to 0.5 millimeters.
4. The radio frequency electrode assembly of claim 2, wherein the gap is filled with a layer of thermally insulating material; the material of the thermal insulation material layer comprises: teflon or polyetherimide or polyetheretherketone or polyimide.
5. The radio frequency electrode assembly of any one of claims 1-4, further comprising: a thermally conductive coupling ring between the focus ring and the thermally conductive ring; a thermally conductive structure located between the thermally conductive coupling ring and the thermally conductive ring; a bottom ground ring surrounding the heat conductive ring; an insulating ring between the bottom ground ring and the heat conductive ring, the insulating ring surrounding the heat conductive ring.
6. The radio frequency electrode assembly of claim 5, wherein the material of the thermally conductive coupling ring comprises: alumina or quartz.
7. The radio frequency electrode assembly of claim 1, further comprising: a bottom plate located below the base.
8. The radio frequency electrode assembly of claim 7, wherein the bottom plate and the thermally conductive ring are interconnected; alternatively, the bottom plate and the heat conductive ring are separated from each other.
9. The radio frequency electrode assembly according to claim 1, wherein the second fluid channel comprises N regions in sequence along the circumferential direction, N is a natural number greater than or equal to 1, the first region of the second fluid channel is connected with the fluid input port, the nth region of the second fluid channel is connected with the fluid output port, the second fluid source enters the second fluid channel from the fluid input port and flows out of the second fluid channel from the fluid output port; the electrostatic chuck comprises a first bearing surface, and the first bearing surface is used for bearing a substrate to be processed.
10. The rf electrode assembly of claim 9, wherein each zone of second fluid passage is equally sized in a direction perpendicular to the first bearing surface; the distance from the top of each zone of the second fluid channel to the bottom of the focus ring is equal.
11. The rf electrode assembly of claim 9, wherein each of the second fluid channel segments is equally sized along a direction perpendicular to the first bearing surface, and the distance from the first segment of the second fluid channel to the top of the nth segment of the second fluid channel to the bottom of the focus ring decreases in sequence.
12. The rf electrode assembly of claim 9, wherein each of the second fluid channels has an equal dimension along a direction perpendicular to the first carrying surface, and the distance from the first region of the second fluid channel to the top of the N-1 th region of the second fluid channel decreases sequentially, and the distance from the top of the N-th region of the second fluid channel to the bottom of the focus ring is greater than the distance from the top of the N-1 th region of the second fluid channel to the bottom of the focus ring.
13. The rf electrode assembly of claim 9, wherein the first region of the second fluid passageway increases in size sequentially through the nth region of the second fluid passageway in a direction perpendicular to the first bearing surface; the distance from the first area of the second fluid channel to the bottom of the Nth area of the second fluid channel to the bottom of the focusing ring is equal; the distance from the first area of the second fluid channel to the top of the Nth area of the second fluid channel to the bottom of the focusing ring is reduced in sequence.
14. The rf electrode assembly of claim 10, wherein the dimension of the second fluid channel from the first region to the N-1 region increases in a direction perpendicular to the first carrying surface, the dimension of the N region of the second fluid channel being smaller than the dimension of the N-1 region of the second fluid channel; the distance from the first area of the second fluid channel to the bottom of the Nth area of the second fluid channel to the bottom of the focusing ring is equal; the distance from the first area of the second fluid channel to the top of the N-1 area of the second fluid channel to the bottom of the focusing ring is reduced in sequence, and the distance from the top of the N-1 area of the second fluid channel to the bottom of the focusing ring is larger than the distance from the top of the N-1 area of the second fluid channel to the bottom of the focusing ring.
15. The rf electrode assembly of claim 11, 12, 13 or 14, wherein the top of the first region of the second fluid channel to the N-1 th region of the second fluid channel is rounded or stepped.
16. The radio frequency electrode assembly of claim 1, wherein the second fluid passage has a number of turns of 1 turn or more than 1 turn.
17. The radio frequency electrode assembly of claim 1, further comprising: the measuring unit is used for measuring the size of a groove formed in the edge area of the substrate to be processed along the direction parallel to the surface of the substrate to be processed; the temperature of the second fluid source is increased when the measurement unit measures that the dimension of the trench along the direction parallel to the surface of the substrate to be processed is greater than a target dimension, and the temperature of the second fluid source is decreased when the measurement unit measures that the dimension of the trench along the direction parallel to the surface of the substrate to be processed is less than the target dimension.
18. A plasma processing apparatus, comprising:
a vacuum reaction chamber;
a base positioned at the downstream of the vacuum reaction cavity, wherein a first fluid channel is arranged in the base and is connected with a first fluid source;
an electrostatic chuck on the base for placing a substrate to be processed thereon;
a focus ring located at a periphery of the electrostatic chuck;
a heat conductive ring positioned around the base, the heat conductive ring being positioned below the focus ring and at least partially surrounding the base, a second fluid channel being disposed within the heat conductive ring, the second fluid channel being connected to a second fluid source, the heat conductive ring being capable of conducting heat with the focus ring;
and the gas inlet device is positioned at the top of the vacuum reaction cavity and is used for providing reaction gas into the vacuum reaction cavity.
19. The plasma processing apparatus of claim 18, wherein the second fluid channel comprises N regions in sequence along the circumferential direction, N is a natural number greater than or equal to 1, the first region of the second fluid channel is connected to the fluid input port, the nth region of the second fluid channel is connected to the fluid output port, the second fluid source enters the second fluid channel from the fluid input port and exits the second fluid channel from the fluid output port; the electrostatic chuck comprises a first bearing surface, and the first bearing surface is used for bearing a substrate to be processed.
20. The plasma processing apparatus of claim 19 wherein each zone of second fluid passageway is equal in size in a direction perpendicular to the first bearing surface; the distance from the top of each zone of the second fluid channel to the bottom of the focus ring is equal.
21. The plasma processing apparatus of claim 19 wherein each of the second fluid passageway zones is of equal size in a direction perpendicular to the first bearing surface, the distance from the first zone of the second fluid passageway to the top of the nth zone of the second fluid passageway to the bottom of the focus ring decreasing in sequence.
22. The plasma processing apparatus of claim 19 wherein each of the second fluid passageway zones is equally sized in a direction perpendicular to the first bearing surface, the distance from the first second passageway zone to the top of the N-1 th zone of the second fluid passageway to the bottom of the focus ring decreasing in order, the distance from the top of the N-th zone of the second fluid passageway to the bottom of the focus ring being greater than the distance from the top of the N-1 th zone of the second fluid passageway to the bottom of the focus ring.
23. The plasma processing apparatus of claim 19 wherein the size of the second fluid passageway first region increases sequentially through the second fluid passageway nth region in a direction perpendicular to the first bearing surface; the distance from the first area of the second fluid channel to the bottom of the Nth area of the second fluid channel to the bottom of the focusing ring is equal; the distance from the first area of the second fluid channel to the top of the Nth area of the second fluid channel to the bottom of the focusing ring is reduced in sequence.
24. The plasma processing apparatus of claim 19 wherein the dimension of the second fluid passageway first region increases sequentially to the second fluid passageway N-1 region along a direction perpendicular to the first bearing surface, the dimension of the second fluid passageway N-1 region being less than the dimension of the second fluid passageway N-1 region; the distance from the first area of the second fluid channel to the bottom of the Nth area of the second fluid channel to the bottom of the focusing ring is equal; the distance from the first area of the second fluid channel to the top of the N-1 area of the second fluid channel to the bottom of the focusing ring is reduced in sequence, and the distance from the top of the N-1 area of the second fluid channel to the bottom of the focusing ring is larger than the distance from the top of the N-1 area of the second fluid channel to the bottom of the focusing ring.
25. The plasma processing apparatus as claimed in claim 21, 22, 23 or 24, wherein the second fluid channel first region rises smoothly or in a stepwise manner from the top of the second fluid channel first region to the top of the second fluid channel N-1 region.
26. The plasma processing apparatus of claim 18 wherein the second fluid passageway has a number of turns of 1 turn or more than 1 turn.
27. The plasma processing apparatus of claim 18, further comprising: a bottom plate located below the base.
28. The plasma processing apparatus of claim 27 wherein the bottom plate is interconnected to the heat conductive ring; alternatively, the bottom plate and the heat conductive ring are separated from each other.
29. The plasma processing apparatus of claim 18, wherein the gas inlet means comprises a mounting substrate disposed at the top of the vacuum reaction chamber and a gas shower head disposed below the mounting substrate; the plasma processing apparatus further includes: the radio frequency power source is connected with the base; a bias power source connected to the base.
30. The plasma processing apparatus of claim 18 wherein the vacuum reaction chamber sidewall comprises a second bearing surface; the plasma processing apparatus further includes: the annular lining comprises a side wall protection ring and a bearing ring for fixing the side wall protection ring on the second bearing surface; an insulating window located on the vacuum reaction chamber; an inductive coupling coil located on the insulating window; the radio frequency power source is connected with the inductive coupling coil; a bias power source connected to the base.
31. The plasma processing apparatus of claim 18, further comprising: and the base and the electrostatic chuck are in a vacuum environment by the aid of a sealing groove in the upper surface and the lower surface of the heat conduction ring and a sealing gasket in the sealing groove.
32. The plasma processing apparatus of claim 18, further comprising: the measuring unit is used for measuring the size of a groove formed in the edge area of the substrate to be processed along the direction parallel to the surface of the substrate to be processed; the temperature of the second fluid source is increased when the measurement unit measures that the dimension of the trench along the direction parallel to the surface of the substrate to be processed is greater than a target dimension, and the temperature of the second fluid source is decreased when the measurement unit measures that the dimension of the trench along the direction parallel to the surface of the substrate to be processed is less than the target dimension.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW108145949ATWI809233B (en) | 2018-12-17 | 2019-12-16 | RF electrode assembly for plasma treatment equipment and plasma treatment equipment |
| US16/718,056US11875970B2 (en) | 2018-12-17 | 2019-12-17 | Radio frequency electrode assembly for plasma processing apparatus, and plasma processing apparatus |
| KR1020190168603AKR102244438B1 (en) | 2018-12-17 | 2019-12-17 | Radio frequency electrode assembly for plasma processing apparatus, and plasma processing apparatus |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2018115435659 | 2018-12-17 | ||
| CN201811543565 | 2018-12-17 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111326390Atrue CN111326390A (en) | 2020-06-23 |
| CN111326390B CN111326390B (en) | 2023-09-12 |
Family
ID=71171121
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910600861.6AActiveCN111326390B (en) | 2018-12-17 | 2019-07-04 | Radio frequency electrode assembly and plasma processing apparatus |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN111326390B (en) |
| TW (1) | TWI809233B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114267625A (en)* | 2021-12-20 | 2022-04-01 | 北京北方华创微电子装备有限公司 | Semiconductor process equipment and its carrying device |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118263181A (en)* | 2022-12-28 | 2024-06-28 | 中微半导体设备(上海)股份有限公司 | Wafer carrier device, plasma processing device and temperature control method thereof |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080236749A1 (en)* | 2007-03-28 | 2008-10-02 | Tokyo Electron Limited | Plasma processing apparatus |
| JP2011192661A (en)* | 2009-03-03 | 2011-09-29 | Tokyo Electron Ltd | Placing table structure, film forming apparatus, and raw material recovery method |
| CN102804931A (en)* | 2009-06-19 | 2012-11-28 | 东京毅力科创株式会社 | Plasma Processing Device And Cooling Device For Plasma Processing Devices |
| TW201724159A (en)* | 2015-09-25 | 2017-07-01 | 東京威力科創股份有限公司 | Mounting stage and plasma processing device |
| CN108242382A (en)* | 2016-12-23 | 2018-07-03 | 三星电子株式会社 | Plasma treatment device |
| CN108878247A (en)* | 2017-05-12 | 2018-11-23 | 细美事有限公司 | Support unit and substrate processing apparatus including the support unit |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100842947B1 (en)* | 2000-12-26 | 2008-07-01 | 도쿄엘렉트론가부시키가이샤 | Plasma processing method and plasma processing apparatus |
| US6767844B2 (en)* | 2002-07-03 | 2004-07-27 | Taiwan Semiconductor Manufacturing Co., Ltd | Plasma chamber equipped with temperature-controlled focus ring and method of operating |
| US20040261946A1 (en)* | 2003-04-24 | 2004-12-30 | Tokyo Electron Limited | Plasma processing apparatus, focus ring, and susceptor |
| KR100674922B1 (en)* | 2004-12-02 | 2007-01-26 | 삼성전자주식회사 | Wafer support apparatus having a cooling flow path for cooling the focus ring |
| JP5222442B2 (en)* | 2008-02-06 | 2013-06-26 | 東京エレクトロン株式会社 | Substrate mounting table, substrate processing apparatus, and temperature control method for substrate to be processed |
| JP6689020B2 (en)* | 2013-08-21 | 2020-04-28 | 東京エレクトロン株式会社 | Plasma processing device |
- 2019
- 2019-07-04CNCN201910600861.6Apatent/CN111326390B/enactiveActive
- 2019-12-16TWTW108145949Apatent/TWI809233B/enactive
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080236749A1 (en)* | 2007-03-28 | 2008-10-02 | Tokyo Electron Limited | Plasma processing apparatus |
| JP2011192661A (en)* | 2009-03-03 | 2011-09-29 | Tokyo Electron Ltd | Placing table structure, film forming apparatus, and raw material recovery method |
| CN102804931A (en)* | 2009-06-19 | 2012-11-28 | 东京毅力科创株式会社 | Plasma Processing Device And Cooling Device For Plasma Processing Devices |
| TW201724159A (en)* | 2015-09-25 | 2017-07-01 | 東京威力科創股份有限公司 | Mounting stage and plasma processing device |
| CN108242382A (en)* | 2016-12-23 | 2018-07-03 | 三星电子株式会社 | Plasma treatment device |
| CN108878247A (en)* | 2017-05-12 | 2018-11-23 | 细美事有限公司 | Support unit and substrate processing apparatus including the support unit |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114267625A (en)* | 2021-12-20 | 2022-04-01 | 北京北方华创微电子装备有限公司 | Semiconductor process equipment and its carrying device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111326390B (en) | 2023-09-12 |
| TW202029404A (en) | 2020-08-01 |
| TWI809233B (en) | 2023-07-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11004716B2 (en) | Electrostatic chuck assembly and semiconductor manufacturing apparatus including the same | |
| TWI791027B (en) | Plasma Reactor with Low-Frequency RF Power Distribution Adjustment Function | |
| US8633423B2 (en) | Methods and apparatus for controlling substrate temperature in a process chamber | |
| US7824519B2 (en) | Variable volume plasma processing chamber and associated methods | |
| US9443753B2 (en) | Apparatus for controlling the flow of a gas in a process chamber | |
| TW201931428A (en) | Plasma reactor having a function of tuning low frequency RF power distribution | |
| US8840725B2 (en) | Chamber with uniform flow and plasma distribution | |
| US20040027781A1 (en) | Low loss RF bias electrode for a plasma reactor with enhanced wafer edge RF coupling and highly efficient wafer cooling | |
| KR20160062109A (en) | Rotatable substrate support having radio frequency applicator | |
| KR102332189B1 (en) | Cooled Focus Rings for Plasma Processing Units | |
| KR102244438B1 (en) | Radio frequency electrode assembly for plasma processing apparatus, and plasma processing apparatus | |
| US12165845B2 (en) | Plasma processing apparatus and method for using plasma processing apparatus | |
| JP2022542090A (en) | Process kit sheath and temperature control | |
| KR102585041B1 (en) | plasma processing device | |
| CN111326390B (en) | Radio frequency electrode assembly and plasma processing apparatus | |
| TWI717934B (en) | Plasma processing equipment | |
| US20230118651A1 (en) | Replaceable electrostatic chuck outer ring for edge arcing mitigation | |
| EP4449487A1 (en) | Substrate support gap pumping to prevent glow discharge and light-up | |
| CN112185787B (en) | RF electrode assembly of plasma processing apparatus and plasma processing apparatus | |
| US20220068615A1 (en) | Stage and plasma processing apparatus | |
| CN114975056B (en) | Conductive member for cleaning focus ring of plasma processing equipment | |
| US11929234B2 (en) | Plasma processing apparatus and lower stage | |
| CN117253770A (en) | Plasma processing apparatus, focus ring temperature adjustment apparatus and method | |
| EP4148774A1 (en) | Conductive member for cleaning focus ring of a plasma processing apparatus | |
| CN117457463A (en) | Inductively coupled plasma processing equipment and inductively coupled coil assembly |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |