Disclosure of Invention
Aiming at the defects of the prior art, the invention provides a method for efficiently detecting the quality of a conductive film.
The invention relates to a method for efficiently detecting the quality of a conductive film; continuously collecting the information of the conductive film, and judging the quality of the conductive film according to the continuously collected information and the calculated information parameters; the information comprises but is not limited to voltage, current and position, the information is continuous information, and the continuous information is information for continuously acquiring different positions of the measured conductive film; the information parameters are selected from one or more of voltage, resistance, resistivity, conductivity and are calculated by voltage or current information and size information of a measured interval; comparing the obtained actual information parameter with the standard information parameter, judging that the area corresponding to the obtained actual information parameter has a defect when the absolute value of the actual information parameter-the standard information parameter/the standard information parameter is greater than or equal to a defect judgment threshold value, and judging that the quality of the area corresponding to the obtained actual information parameter is qualified when the absolute value of the actual information parameter-the standard information parameter/the standard information parameter is less than the defect judgment threshold value; during detection, the detection device and the detected conductive film can move relatively.
The invention relates to a method for efficiently detecting the quality of a conductive film; the relative movement includes the following three cases: the detection device is static, and the detected conductive film moves, so that the detection device is mainly used for quality detection of the conductive film produced in the process; the detection device moves, and the detected conductive film is static and is mainly used for detecting the quality of the conductive film which is difficult to move; the detection device and the detected conductive film move at different speeds simultaneously and are mainly used for assisting in adjusting the information acquisition frequency and detecting a specific area; the relative movement is preferably a continuous relative movement.
The invention relates to a method for efficiently detecting the quality of a conductive film; the detection device is contacted with the conductive film through contact ends, wherein the contact ends are provided with 2 contact ends for acquiring information, and the contact modes of the contact ends and the conductive film include but are not limited to point contact, array contact, line contact and surface contact; the contact area between any contact end and the conductive film is less than or equal to 500mm2Preferably 100mm or less2More preferably 20mm or less2More preferably not more than 2mm2The selection of the parameters is related to the detection precision, and for high-end detection, the preferable scheme is preferably selected while ensuring the physical performance, and certainly, in order to further improve the reliability of the information, the contact areas of the two contact ends for information acquisition and the conductive thin film are equal.
The invention relates to a method for efficiently detecting the quality of a conductive film; defining an area between the information acquisition contact ends as an information acquisition area, defining the opposite direction of the conductive film relative to the movement direction of the detection device as an information acquisition direction, defining the 1 st information acquisition contact end in the information acquisition direction as a positioning contact end, defining the state of acquiring the 1 st information as an initial state, and in the initial state, defining the position of the conductive film contacted with the positioning contact end as an information acquisition starting point (coordinate origin); the origin of coordinates can also be manually set and changed; after the coordinate origin is set, the positions of other points on the conductive film are represented by the distances between the other points and the coordinate origin.
The invention relates to a method for efficiently detecting the quality of a conductive film; the detection device automatically acquires information and calculates information parameters in the process that the conductive film enters and exits the information acquisition area, and automatically draws an information parameter-distance curve.
The invention relates to a method for efficiently detecting the quality of a conductive film; the ordinate of the information parameter-distance curve is an information parameter, and the information parameter is obtained by calculation according to the acquired voltage or current and the size information of the conductive film in the measured area; the calculation employs at least one of the following formulas:
resistance (Ω) is voltage (V) ÷ current (a);
resistivity (Ω · m) is resistance (Ω) × cross-sectional area (m)2) Length (m);
conductivity (S/m) ÷ 1 ÷ resistivity (Ω · m);
electrical conductivity (% IACS) — electrical conductivity (MS/m) ÷ 0.58.
The invention relates to a method for efficiently detecting the quality of a conductive film; the abscissa of the information parameter-distance curve is the distance between the contact position of the conductive film and the positioning contact end and the information acquisition starting point; the distance may be obtained by direct measurement, or by calculation based on time and velocity parameters.
The invention relates to a method for efficiently detecting the quality of a conductive film; the information parameter-distance curve reflects the quality information of the measured conductive film, and the information parameter-distance curve deviates from normal and returns to normal, reflecting the entrance and exit of defects into and out of the information acquisition area. FIG. 1 is a schematic diagram of an information parameter-distance curve corresponding to a defect and a position of a conductive film, a starting point (O point) of the information parameter-distance curve is obtained by calculation according to the 1 st acquired information, the distance between the corresponding position on the conductive film and the information acquisition starting point is 0, and the abscissa of the point is 0 mm; the state A is a state that 1 defect is about to enter the information acquisition area, when the measured conductive film moves from an initial state to the state A, no defect exists in the information acquisition area, an OA section correspondingly appears on an information parameter-distance curve, the information parameter is a normal parameter, the distance between the corresponding position of a point A on the conductive film and an information acquisition initial point is 50mm, and the abscissa of the point is 50 mm; the state B is a state that 1 defect just completely enters the information acquisition area, when the measured conductive film moves from the state A to the state B, the defect goes through the processes of starting to enter and completely entering the information acquisition area, an AB section correspondingly appears on an information parameter-distance curve, the information parameter is an abnormal parameter, the distance between the corresponding position of a point B on the conductive film and the information acquisition starting point is 60mm, and the abscissa of the point is 60 mm; the state C is a state that the defect is about to leave the information acquisition area, when the measured conductive film moves from the state B to the state C, a BC section appears on an information parameter-distance curve, the distance between the corresponding position of a point C on the conductive film and the information acquisition starting point is 90mm, and the abscissa position of the point is 90 mm; the state D is the state that the defect is leaving the information acquisition area, when the measured conductive film moves from the state C to the state D, the information parameters gradually return to the normal state, the distance between the corresponding position of the point D on the conductive film and the information acquisition starting point is 96mm, and the abscissa of the point is 96 mm.
The invention relates to a method for efficiently detecting the quality of a conductive film; in a small number of cases, when the front end of the measured conductive film has a defect, the information parameter at the starting point of the information parameter-distance curve is abnormal, or when the tail end of the measured conductive film has a defect, the information parameter at the ending point of the information parameter-distance curve is abnormal.
The invention relates to a method for efficiently detecting the quality of a conductive film; the continuously acquired information can also comprise time information and temperature information, and when the acquired information comprises the time information, an information parameter-position-time curve can be obtained according to the information parameters, the position and the time.
The information obtained by the person skilled in the art according to the present invention and the mathematical processing, scientific calculation, physical significance transformation performed, also belong to the essence of the present invention.
The invention relates to a method for efficiently detecting the quality of a conductive film; the defect judgment threshold value is PrDenotes that when the information parameter is resistance and the unit used is Ω, the PrThe value of (a) is greater than or equal to 0.0001, preferably 0.0001 to 0.1, more preferably 0.0001 to 0.01, and even more preferably 0.0001 to 0.001; when substitution is made between information parameters, the PrAnd carrying out corresponding conversion on the value of (A).
The invention relates to a method for efficiently detecting the quality of a conductive film; quality analysis can be carried out according to an actual information parameter-distance curve, the actual position and the defect length of the defect on the information parameter can be determined according to the information acquisition initial point (coordinate origin), the abscissa of the initial point and the ending point of the abnormal information parameter regression normal, and the significance degree of the defect can be determined according to the difference value of the maximum value (or the minimum value) and the standard information parameter of the information parameter; FIG. 2 is a diagram of information parameter versus distance, with the actual information parameter being represented by Y and the standard information parameter being represented by YsIs represented by Ys±(Pr×Ys) Is the range of normal information parameters, and the error range mainly takes the measurement error of the system into consideration. As shown in FIG. 2, the actual information parameter Y of the AB segment and BC segment satisfies | Y-Ys|<Pr×YsIndicating that the corresponding conductive film area is free of defects; the information parameter Y of the C point satisfies | Y-Ys|=Pr×Ys,Y=YcThe actual information parameter being at a critical value YcIndicating that a defect is about to enter the information acquisition area; the actual information parameter of the CD segment exceeds the normal parameter range, and the information parameter Y satisfies | Y-Ys|≥Pr×YsGradually entering the information acquisition area corresponding to the defect; the value of the information parameter Y of the DF segment is relatively constant, and ideally, Y is equal to YmThe actual information parameter is at the maximum value, and the corresponding defect is completely positioned in the information acquisition area; the actual information parameters of FG section are continuously reduced, the corresponding defect gradually leaves the information acquisition area, and the abscissa of the F point is the connection between the defect and the positioningThe distance between the contact end contact starting point and the information acquisition starting point, the abscissa of the point G is the distance between the defect and the information acquisition starting point and the contact end contact positioning end contact ending point, and the abscissa difference value between the point F and the point G is the defect length; the information parameter Y of the G point satisfies | Y-Ys|=Pr×Ys,Y=YGThe actual information parameter being at a critical value YcThe corresponding position of the G point on the conductive film is a defect termination point; y of GH and HI sections satisfies | Y-Ys|<Pr×YsAnd the information parameter is in the normal parameter range, which indicates that the corresponding conductive film area is free of defects.
The invention relates to a method for efficiently detecting the quality of a conductive film; when the actual information parameter/standard information parameter is greater than or equal to PrThen, judging that the detected area at least comprises 1 or 1 defect; calculating PySaid P isy=(Ym-Ys)÷YsSaid Y issIs a standard information parameter, said YmIs the maximum or minimum of the actual information parameter, PyIs a defect judgment factor; when the information parameters are voltage information and/or resistance and/or resistivity, Py is more than 0, the defect types comprise but are not limited to pinholes, scratches, depressions, small sizes, tears and cracks, Py is less than 0, and the defect types comprise but are not limited to bulges, bends, folds and large sizes; when the information parameter is selected from conductivity and/or conductivity, Py is less than 0, defect types include but are not limited to pinholes, scratches, dents, small sizes, tears and cracks, Py is more than 0, and defect types include but are not limited to bulges, bends, folds and large sizes.
The invention relates to a method for efficiently detecting the quality of a conductive film; the number of defects can be judged by analyzing the change condition of the information parameter-distance curve; generally, the information parameter-distance curve is abnormal once and returns to normal, and at least 1 or 1 defect in the corresponding area of the conductive film can be judged; in a few cases, the information parameter-distance curve is abnormal repeatedly and returns to normal, or the change rate is increased or decreased suddenly, and at least 2 or 2 defects exist in the corresponding area of the conductive film can be judged; in rare cases, the information parameter-distance curve is abnormal and returns to normal repeatedly, and finally the normal parameter range can not be returned, and the existence of a large number of defects in the corresponding area of the conductive film or the physical boundary of the corresponding area of the conductive film is judged.
The invention relates to a method for efficiently detecting the quality of a conductive film; the method can detect the continuous occurrence of various defects, and judge whether 2 or more than 2 defects exist in the detected region according to the slope of the information parameter-distance curve and the change condition of the slope if the information parameter-distance curve is abnormal and does not return for a long time or does not return until the detection is finished.
The invention relates to a method for efficiently detecting the quality of a conductive film; defects that cause a change in the resistance of the conductive film, including but not limited to a change in the resistivity, a change in the cross-sectional area of the conductive film, are among the types of defects detectable by the present method; when the defect is of a type in which the sectional area becomes smaller, the sectional area becomes smaller to cause the resistance to become larger, as shown in FIG. 3, YmIs the maximum value of the continuous resistance obtained, Ym>Ys,PyIs greater than 0; when the defect is of a type having a larger cross-sectional area, the resistance becomes smaller as the cross-sectional area becomes larger, as shown in FIG. 4, YmIs the minimum value of the continuous resistance obtained, Ym<Ys,Py<0;YmAnd YsThe difference in (b) reflects the severity of the defect.
The invention relates to a method for efficiently detecting the quality of a conductive film; the standard information parameters are information parameters obtained by adopting a standard sample, the standard sample can be determined according to a standard, and the standard is a national standard, an industry standard or an enterprise standard.
The invention relates to a method for efficiently detecting the quality of a conductive film; the standard information parameter can also be determined by a user, or obtained by detection and/or calculation according to a standard sample determined by the user.
The invention relates to a method for efficiently detecting the quality of a conductive film; when standard information parameters are acquired, the detection environment of the standard sample is the same as the actual detection environment, and the detection environment comprises but is not limited to temperature, pressure, humidity and noise.
The invention relates to a method for efficiently detecting the quality of a conductive film; the applicable temperature range is 10K-the melting temperature or the liquefaction temperature or the gasification temperature of the conductive film material to be measured.
The invention relates to a method for efficiently detecting the quality of a conductive film; the cross-sectional area of the conductive film is less than or equal to 100mm2Preferably 20mm or less2More preferably not more than 4mm2Still more preferably not more than 1mm2More preferably 0.2mm or less2。
The invention relates to a method for efficiently detecting the quality of a conductive film; the voltage or current information acquisition method includes, but is not limited to, a direct current four-point method, a single bridge method and a double bridge method.
The invention relates to a method for efficiently detecting the quality of a conductive film; the pitch between the 2 information collecting contact terminals contacting the conductive film is not more than 800mm, preferably not more than 400mm, more preferably not more than 200mm, and still more preferably not more than 100 mm.
The invention relates to a method for efficiently detecting the quality of a conductive film; during detection, the relationship among the information acquisition frequency, the relative movement speed between the conductive film and the detection device and the distance between the information acquisition contact ends is as follows: the relative movement speed ÷ information acquisition frequency < the information acquisition contact end distance can ensure that all areas of the conductive film can be detected, the acquired information samples are enough for analysis, and the smaller the relative movement speed is, the larger the acquisition frequency is, and the more the acquired information samples are.
The invention relates to a method for efficiently detecting the quality of a conductive film; the information acquisition frequency is more than or equal to 1 time/10 seconds, preferably more than or equal to 1 time/second, and more preferably more than or equal to 10 times/second; the information acquisition frequency can also be set according to the length of the information acquisition area, and within a 10mm detection interval, the information acquisition frequency is more than or equal to 1 time, preferably more than or equal to 10 times, and more preferably more than or equal to 100 times; the information acquisition frequency can be optimized and adjusted according to the relative movement speed of the conductive film and the detection device and the characteristics of the information acquisition device.
The invention relates to a method for efficiently detecting the quality of a conductive film; when the defect enters and leaves the information acquisition area, the corresponding information parameters have a certain mapping relation, and the information acquisition system can be checked according to the mapping relation; as shown in FIG. 2, the BD segment corresponds to the defect entering the information acquisition area, the FH segment corresponds to the defect leaving the information acquisition area, and the information parameters of the BD segment and the FH segment are ideally mapped to each other, i.e. for any point (X, Y) on the BD(X)) And mapped point on FH (X + l, Y)(X+l)) Existence of a relationship Y(X)'=-Y(X+l)', wherein l is the length of the information acquisition region.
The invention relates to a method for efficiently detecting the quality of a conductive film; there are many defect determination methods, and any defect determination method based on the present invention is considered to fall within the scope of protection of the present patent.
Based on the detection idea of the invention, the directly obtained information or the information obtained by conversion has advantages in application under different materials and different precision requirements.
The conductive film of the present invention is preferably a carbonaceous film, an ITO film, an organic conductive film, or the like. The carbonaceous film is preferably a graphene film.
The invention also specially designs a device matched with the detection method; the device comprises N independent detection units, and the N units can be completely or partially contacted with the conductive film during detection; the detection unit can be static or move according to a designed track, and the conductive film can also be static or move according to a designed track; the detection unit and the conductive film can move relatively; and N is an integer greater than or equal to 1.
The invention relates to a device for efficiently detecting the quality of a conductive film; when the direct current four-point method is adopted for detection, each independent detection unit comprises 4 binding posts which are arranged side by side, a constant current providing module, a temperature measuring module and an information acquisition module; two binding posts at two ends of the 4 binding posts are connected with the constant current providing module through a lead, and two binding posts in the middle are connected with the information acquisition module through leads; the temperature measurement module is connected with the information acquisition module.
The invention relates to a device for efficiently detecting the quality of a conductive film; the binding post is connected with a contact end, and the contact end comprises but is not limited to a conductive strip, a conductive ball and a conductive probe; the electrical resistivity of the wiring terminal and the contact end is less than or equal to 2 multiplied by 10-7Ω · m, preferably 4 × 10 or less-8Ω · m, more preferably 2 × 10 or less-8Ω·m。
Compared with the prior art, the invention provides a technical scheme for efficiently detecting the quality of a conductive film, which has the technical advantages that:
1. the invention can realize the on-line rapid detection of the conductive film, and the detection device and the conductive film can have various relative movement modes, thereby having great practical value for on-line detection.
2. The invention can detect various materials, is suitable for different detection places, can realize the on-line detection of different temperature environments, and can convert information parameters of different temperatures.
3. The invention can be used for detecting the defects causing resistance change, not only can detect the quality problem of the surface layer, but also can detect the internal defects, especially can detect the coexistence of 2 or more than 2 defects, and the prior art can not realize the function.
Example 3:
detection materials: the tin foil paper is 0.02mm in thickness, 300mm in width and about 1500mm in length; FIG. 11 is a photograph of a test sample;
terminal spacing/information acquisition zone length: 100 mm;
inputting a constant current: 1.0A;
the motion mode is as follows: the detection device is static, and the sample moves;
the moving speed of the sample is as follows: 30mm/s
Signal acquisition frequency: 30 times/s
Standard voltage: 1.3061 mV;
FIG. 12 is a measured voltage versus distance curve, Pr0.005, according to | measured voltage signal-standard voltage signal |/standard voltage signal ≥ PrJudging that 1 defect exists, wherein a voltage signal within a position range of 810-864 mm abnormally rises and enters an information acquisition area correspondingly to the defect, Ym is 1.3554mV, the voltage signal returns to normal within the position range of 910-964 mm correspondingly to the defect leaves the information acquisition area, the distances between the starting point and the ending point of the defect and the starting point of the information acquisition are 910mm and 964mm respectively, and the length of the defect area is 54 mm; the defect decision factor Py ═ (1.3554-1.3061) ÷ 1.3061 ═ 0.03775, and since the decision factor Py > 0 and the length of the defect region is long, it is determined that the possible defect type is a scratch.
Further, the slope of the measured voltage signal curve is obviously changed in abnormal rising and falling stages, the slope is about 0.001357mV/mm in the rising stage of 810mm-837mm, the slope is about 0.004223mV/mm in the rising stage of 861mm-864mm, the slope is about-0.001357 mV/mm in the falling stage of 910mm-937mm, and the slope is about-0.004223 mV/mm in the falling stage of 961mm-964mm, and the defect is judged to be formed by two types of defects; the first defect, having a smaller absolute slope and a longer length, is most likely to be a scratch, the second defect, having a larger absolute slope and a shorter length, is most likely to be a pinhole, and the length of the middle plateau between the two slopes is 24mm, indicating that the two defects are about 24mm apart, and the photograph shown in FIG. 13 shows that the defects are scratches and pinholes.
Comparative example 1:
the detection mode is as follows: carrying out segmented discrete detection;
detection materials: the same tinfoil paper as the tinfoil paper used in theembodiment 3 is 0.02mm in thickness, 300mm in width and about 1500mm in length;
terminal spacing/information acquisition zone length: 100 mm;
inputting a constant current: 0.55A;
standard voltage: 1.3061 mV;
FIG. 13 is a measured voltage versus distance curve, Pr0.005, because the distance between the middle 2 binding posts is 100mm, the measurement is needed 15 times, the result of each detection is the result of averaging 100mm sections, and the measured voltage signal-standard voltage signal/standard voltage signal is more than or equal to PrAnd judging that the area of 900mm-1000mm has defects, and because only 15 discrete data points can not determine the specific degree and length of the area, the possible defect types can not be judged. Example 3 detected defects in the 910mm to 964mm region, and two types of defects were analyzed, whereas this comparative example was not detected.
The comparative example shows the disadvantages of discrete detection: the method has the advantages of needing to be divided in advance, having many detection times, being slow in detection speed, being unobvious in signals, being inaccurate in positioning, being incapable of further distinguishing types, being incapable of detecting the condition of extremely small defects and the like.