CN111253083A - a thin film device - Google Patents

Abstract

The invention discloses a thin film device, which comprises a substrate, a film component, a top dielectric film layer and a protective film layer which are sequentially stacked upwards, wherein the film component comprises a dielectric film layer, a silver film layer and a sacrificial film layer which are sequentially stacked upwards along the substrate, or the dielectric film layer, the sacrificial film layer and the silver film layer; or the zinc-tin oxide film layer and the AgTi film layer are laminated between the silver film layer and the dielectric film layer; or the zinc-tin oxide film layer and the AgTi film layer are laminated on the sacrificial film layer, and the zinc-tin oxide film layer and/or the AgTi film layer are also laminated between the silver film layer and the dielectric film layer, wherein the content of Sn in the zinc-tin oxide film layer is less than or equal to 30 wt%, and the content of Ti in the AgTi film layer is more than or equal to 50 at%. The invention can improve the stability of the film system in high-temperature heat treatment, and can also improve the chemical stability and mechanical property of the film device.

Description

Translated fromChinese

一种薄膜器件a thin film device

技术领域technical field

本发明属于薄膜器件技术领域，具体地涉及一种可进行高温热处理的薄膜器件。The invention belongs to the technical field of thin film devices, and in particular relates to a thin film device capable of high temperature heat treatment.

背景技术Background technique

普通的玻璃没有隔热功能，随着人们节能意识的增强，现在很多建筑物或汽车都已使用镀膜玻璃(薄膜器件)，这些镀膜玻璃可以起到很好的隔热效果，使建筑物内部或车内的舒适度增加。Ordinary glass has no thermal insulation function. With the enhancement of people's awareness of energy saving, many buildings or automobiles have now used coated glass (thin film devices). Increased comfort in the car.

太阳能电池是用于通过阳光直接生成电流的光伏元件。由于对清洁能源的需求不断增加，最近几年太阳能电池的制造已经大幅扩大并且还在持续扩大。由于透明导电氧化物膜作为透明涂层和电极的多功能性，其在太阳能电池中得到广泛使用。在许多情况下，通过增加透明导电氧化物膜的掺杂物降低电阻导致不期望的透明度的降低，同时透明导电氧化物膜在进行高温热处理后，其一些性能会出现下降。还有为了进一步降低透明导电氧化物膜的电阻，则需要更厚的膜层，这会导致膜层的透过率降低、膜层的应力增大而导致膜层的不稳定性增加，也增加了膜层的制造成本。Solar cells are photovoltaic elements used to generate electricity directly from sunlight. Due to the increasing demand for clean energy, the manufacture of solar cells has expanded significantly in recent years and continues to expand. Transparent conductive oxide films are widely used in solar cells due to their versatility as transparent coatings and electrodes. In many cases, reducing resistance by increasing the dopant of the transparent conductive oxide film results in an undesired reduction in transparency, while some properties of the transparent conductive oxide film may be degraded after high temperature heat treatment. In addition, in order to further reduce the resistance of the transparent conductive oxide film, a thicker film layer is required, which will lead to a decrease in the transmittance of the film layer, an increase in the stress of the film layer, and an increase in the instability of the film layer. manufacturing cost of the film.

在太阳能电池、建筑及汽车等应用领域所使用的薄膜器件，其在制备过程都需要经受高温热处理，因此要求该薄膜器件能够耐受高温热处理，同时具备高的可见光透过率、低的电阻、良好的抗机械性能及高的稳定性等，但现有的薄膜器件无法满足该要求，有必要对其进行改进。Thin-film devices used in applications such as solar cells, buildings and automobiles need to undergo high-temperature heat treatment during the preparation process. Therefore, the thin-film devices are required to be able to withstand high-temperature heat treatment, and have high visible light transmittance, low resistance, Good mechanical resistance and high stability, etc., but the existing thin-film devices can not meet the requirements, it is necessary to improve it.

发明内容SUMMARY OF THE INVENTION

本发明的目的在于提供一种可以提高膜系在高温热处理的稳定性，又可提高该薄膜器件的化学稳定性和改善其机械性能，且具有高的可见光透过率、低的电阻的薄膜器件用以解决上述存在的技术问题。The purpose of the present invention is to provide a thin film device with high visible light transmittance and low resistance, which can improve the stability of the film system in high temperature heat treatment, and can also improve the chemical stability and mechanical properties of the thin film device. To solve the above-mentioned technical problems.

为实现上述目的，本发明采用的技术方案为：一种薄膜器件，包括依次向上层叠的基板、膜层组件、顶层电介质膜层和保护膜层，所述膜层组件包括沿基板向上依次层叠的电介质膜层、银膜层和牺牲膜层，或所述膜层组件包括沿基板向上依次层叠的电介质膜层、牺牲膜层和银膜层，所述膜层组件还包括锌锡氧化物膜层和AgTi膜层，所述锌锡氧化物膜层和AgTi膜层层叠在牺牲膜层上面；或所述锌锡氧化物膜层和AgTi膜层层叠在银膜层与电介质膜层之间；或所述锌锡氧化物膜层和AgTi膜层层叠在牺牲膜层上面，同时所述锌锡氧化物膜层和/或AgTi膜层还层叠在银膜层与电介质膜层之间，所述锌锡氧化物膜层中Sn的含量≤30wt％，所述AgTi膜层中Ti的含量≥50at％。In order to achieve the above purpose, the technical solution adopted in the present invention is: a thin film device, comprising a substrate, a film layer assembly, a top dielectric film layer and a protective film layer that are stacked upward in sequence, and the film layer assembly A dielectric film layer, a silver film layer and a sacrificial film layer, or the film layer assembly includes a dielectric film layer, a sacrificial film layer and a silver film layer that are sequentially stacked up along the substrate, and the film layer assembly further includes a zinc tin oxide film layer and AgTi film layer, the zinc tin oxide film layer and the AgTi film layer are stacked on the sacrificial film layer; or the zinc tin oxide film layer and the AgTi film layer are stacked between the silver film layer and the dielectric film layer; or The zinc tin oxide film layer and the AgTi film layer are stacked on the sacrificial film layer, and the zinc tin oxide film layer and/or the AgTi film layer are also stacked between the silver film layer and the dielectric film layer, and the zinc tin oxide film layer and/or the AgTi film layer are also stacked on the sacrificial film layer. The content of Sn in the tin oxide film layer is less than or equal to 30 wt %, and the content of Ti in the AgTi film layer is more than or equal to 50 at%.

进一步的，所述锌锡氧化物膜层中Sn的含量≤20wt％；所述AgTi膜层中Ti的含量≥70at％。Further, the content of Sn in the zinc tin oxide film layer is ≤20wt%; the content of Ti in the AgTi film layer is ≥70at%.

更进一步的，所述锌锡氧化物膜层中Sn的含量≤15wt％；所述AgTi膜层中Ti的含量≥85at％。Further, the content of Sn in the zinc tin oxide film layer is ≤15wt%; the content of Ti in the AgTi film layer is ≥85at%.

进一步的，所述锌锡氧化物膜层的厚度≤15nm，优选厚度≤10nm；所述AgTi膜层的厚度为0.05-10nm，优选厚度1-8nm。Further, the thickness of the zinc tin oxide film layer is less than or equal to 15 nm, preferably the thickness is less than or equal to 10 nm; the thickness of the AgTi film layer is 0.05-10 nm, preferably 1-8 nm.

进一步的，所述牺牲膜层的材料为NiCr、Ti、NiCrO_x、Cr、NiCrMo、CrO_x、MoO_x、TiMo、TiMoO_x、NiTi、TiO_x和NiTiO_x中的任意一种或它们的任一组合。Further, the material of the sacrificial film layer is any one of NiCr, Ti, NiCrO_x , Cr, NiCrMo, CrO_x , MoO_x , TiMo, TiMoO_x , NiTi, TiO_x and NiTiO_x or any of them combination.

进一步的，所述牺牲膜层的厚度为0.1-8nm，优选厚度为1-5nm。Further, the thickness of the sacrificial film layer is 0.1-8 nm, preferably 1-5 nm.

进一步的，所述电介质膜层、顶层电介质膜层和保护膜层的材料为SnO_x、TiO_x、SiO_x、SiN_x、ZnO_x、AlZnO_x、Zn_xSn_yO_n、ZrO_x、Zn_xTi_yO_n、NbO_x、Ti_xNb_yO_n、SiNO_x、ITO、AZO、IWO、BZO、GZO、IZO、IMO、ICO、ITIO、IGZO、氧化锡基材料和金属硫化物中的任意一种或它们的任一组合。Further, the materials of the dielectric film layer, the top dielectric film layer and the protective film layer are SnO_x , TiO_x , SiO_x , SiN_x , ZnO_x ,_AlZnOx , Zn_x Sn_y On , ZrO_x , Zn_xAny of Ti_y On , NbO_x , Ti_x Nb_y On , SiNO_x , ITO, AZO,_IWO , BZO, GZO, IZO, IMO, ICO, ITIO, IGZO, tin oxide based materials and metal sulfides species or any combination of them.

进一步的，所述电介质膜层、顶层电介质膜层和保护膜层的膜层厚度为1-100nm。Further, the film thickness of the dielectric film layer, the top dielectric film layer and the protective film layer is 1-100 nm.

进一步的，所述基板为玻璃基板、聚酰亚胺基板、或具有太阳能电池结构的基板。Further, the substrate is a glass substrate, a polyimide substrate, or a substrate with a solar cell structure.

进一步的，所述膜层组件的数量为两个，两个膜层组件依次层叠设置。Further, the number of the membrane layer components is two, and the two membrane layer components are stacked in sequence.

进一步的，所述膜层组件的数量为三个，三个膜层组件依次层叠设置。Further, the number of the membrane layer components is three, and the three membrane layer components are stacked in sequence.

进一步的，所述膜层组件的数量为四个，四个膜层组件依次层叠设置。Further, the number of the membrane layer components is four, and the four membrane layer components are stacked in sequence.

进一步的，该薄膜器件用于制作成夹层薄膜器件或中空薄膜器件。Further, the thin film device is used to be fabricated into a sandwich thin film device or a hollow thin film device.

本发明的有益技术效果：Beneficial technical effects of the present invention:

本发明通过在牺牲膜层之上形成锌锡氧化物膜层和AgTi膜层；或在银膜层与电介质膜层之间形成锌锡氧化物膜层和AgTi膜层；或在牺牲膜层之上形成锌锡氧化物膜层和AgTi膜层，同时在银膜层与电介质膜层之间形成锌锡氧化物膜层和/或AgTi膜层，锌锡氧化物膜层中Sn的含量≤30wt％，AgTi膜层中Ti的含量≥50at％，在膜系中使用锌锡氧化物膜层和AgTi膜层的组合可以使膜系中的银层的生长更加均匀以减少岛状形态的出现，可使膜系中各膜层之间的结合更牢固，同时高温环境下其能够更好的阻挡外界气氛对膜系内部的破坏，从而可以提高膜系在高温热处理的稳定性，又可提高该薄膜器件的化学稳定性和改善其机械性能。此外，本发明还具有高的光透过率、低的电阻。In the present invention, a zinc tin oxide film and an AgTi film are formed on the sacrificial film; or a zinc tin oxide film and an AgTi film are formed between the silver film and the dielectric film; or between the sacrificial film A zinc tin oxide film and an AgTi film are formed thereon, and a zinc tin oxide film and/or an AgTi film are formed between the silver film and the dielectric film, and the content of Sn in the zinc tin oxide film is ≤30wt %, the content of Ti in the AgTi film layer is ≥50at%, using the combination of the zinc tin oxide film layer and the AgTi film layer in the film system can make the growth of the silver layer in the film system more uniform to reduce the appearance of island-like morphology, It can make the bonding between the film layers in the film system more firm, and at the same time, it can better block the damage of the external atmosphere to the inside of the film system in a high temperature environment, so as to improve the stability of the film system in high temperature heat treatment, and improve the performance of the film system. Chemical stability of thin-film devices and improved mechanical properties. In addition, the present invention also has high light transmittance and low resistance.

附图说明Description of drawings

为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简要介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域的普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。In order to illustrate the technical solutions in the embodiments of the present invention more clearly, the following briefly introduces the accompanying drawings used in the description of the embodiments. Obviously, the drawings in the following description are only some embodiments of the present invention. For those of ordinary skill in the art, other drawings can also be obtained from these drawings without any creative effort.

图1为本发明的一种薄膜器件的结构示意图；1 is a schematic structural diagram of a thin film device of the present invention;

图2为本发明的另一种薄膜器件的结构示意图；2 is a schematic structural diagram of another thin film device of the present invention;

图3为本发明的第三种薄膜器件的结构示意图；3 is a schematic structural diagram of a third thin-film device of the present invention;

图4为本发明的第四种薄膜器件的结构示意图。FIG. 4 is a schematic structural diagram of a fourth thin film device of the present invention.

具体实施方式Detailed ways

为进一步说明各实施例，本发明提供有附图。这些附图为本发明揭露内容的一部分，其主要用以说明实施例，并可配合说明书的相关描述来解释实施例的运作原理。配合参考这些内容，本领域普通技术人员应能理解其他可能的实施方式以及本发明的优点。图中的组件并未按比例绘制，而类似的组件符号通常用来表示类似的组件。To further illustrate the various embodiments, the present invention is provided with the accompanying drawings. These drawings are a part of the disclosure of the present invention, which are mainly used to illustrate the embodiments, and can be used in conjunction with the relevant description of the specification to explain the operation principles of the embodiments. With reference to these contents, one of ordinary skill in the art will understand other possible embodiments and advantages of the present invention. Components in the figures are not drawn to scale, and similar component symbols are often used to represent similar components.

现结合附图和具体实施方式对本发明进一步说明。The present invention will now be further described with reference to the accompanying drawings and specific embodiments.

在此先说明，本发明中的氧化锡基材料为氧化锡掺杂氟的材料、氧化锡掺碘的材料、氧化锡掺杂锑的材料或它们的任一组合；本发明中的ITO是指氧化铟掺杂锡的材料、AZO是指氧化锌掺杂铝的材料、IWO是指氧化铟掺杂钨的材料、BZO是指氧化锌掺杂硼的材料、GZO是指氧化锌掺杂镓的材料、IZO是指氧化锌掺杂铟的材料、IMO是指氧化铟掺杂钼的材料、ICO是指氧化铟掺杂铈的材料、ITIO是指氧化铟掺杂钛的材料、IGZO是指氧化锌掺杂铟镓的材料。It is explained here that the tin oxide-based material in the present invention is a tin oxide-doped fluorine material, a tin oxide-doped iodine material, a tin oxide-doped antimony material or any combination thereof; ITO in the present invention refers to Indium oxide doped tin material, AZO refers to zinc oxide doped aluminum material, IWO refers to indium oxide doped tungsten material, BZO refers to zinc oxide doped boron material, GZO refers to zinc oxide doped gallium material Material, IZO refers to zinc oxide doped indium material, IMO refers to indium oxide doped molybdenum material, ICO refers to indium oxide doped cerium material, ITIO refers to indium oxide doped titanium material, IGZO refers to oxide Zinc doped indium gallium material.

如图1所示，一种薄膜器件，包括依次向上层叠的基板1、膜层组件、顶层电介质膜层7和保护膜层8，所述膜层组件包括沿基板1向上依次层叠的电介质膜层2、银膜层3和牺牲膜层4，所述膜层组件还包括锌锡氧化物膜层5和AgTi膜层6，所述锌锡氧化物膜层5和AgTi膜层6依次层叠在牺牲膜层4上面，所述锌锡氧化物膜层5中Sn的含量≤30wt％，所述AgTi膜层6中Ti的含量≥50at％。As shown in FIG. 1 , a thin film device includes asubstrate 1 , a film layer assembly, a topdielectric film layer 7 and aprotective film layer 8 that are sequentially stacked upward, and the film layer assembly includes a dielectric film layer that is sequentially stacked upward along thesubstrate 1 . 2. Thesilver film layer 3 and thesacrificial film layer 4, the film assembly also includes a zinc tinoxide film layer 5 and anAgTi film layer 6, and the zinc tinoxide film layer 5 and theAgTi film layer 6 are sequentially stacked on the sacrificial layer. On thefilm layer 4 , the content of Sn in the zinc tinoxide film layer 5 is ≤30 wt %, and the content of Ti in theAgTi film layer 6 is ≥ 50 at %.

优选的，所述锌锡氧化物膜层5中Sn的含量≤20wt％，能够更好的阻止膜层中岛状形态的生成；所述AgTi膜层6中Ti的含量≥70at％，使膜层在高温下更加稳定。Preferably, the content of Sn in the zinc tinoxide film layer 5 is ≤ 20 wt%, which can better prevent the formation of island-like forms in the film layer; the content of Ti in theAgTi film layer 6 is ≥ 70 at%, so that the film Layers are more stable at high temperatures.

更优选的，所述锌锡氧化物膜层5中Sn的含量≤15wt％，膜层在高温下不易发生晶型变化，使膜层的稳定性得以提高；所述AgTi膜层6中Ti的含量≥85at％，使能够提供更好的界面状态，进一步促进膜层性能的稳定性。More preferably, the content of Sn in the zinc tinoxide film layer 5 is less than or equal to 15wt%, and the film layer is not prone to crystal change at high temperature, so that the stability of the film layer can be improved; The content is ≥85at%, which can provide a better interface state and further promote the stability of the film layer performance.

优选的，所述锌锡氧化物膜层5的厚度≤15nm，优选厚度≤10nm，若该膜层太厚会影响整个膜系的光学性能；所述AgTi膜层6的厚度为0.05-10nm，优选厚度1-8nm，若该膜层太薄则起不到应有的作用，若膜层太厚则容易使整个膜系出现脱膜现象，也会使膜系的光学性能出现较大的下降。Preferably, the thickness of the zinc tinoxide film layer 5 is less than or equal to 15 nm, preferably less than or equal to 10 nm. If the film is too thick, the optical properties of the entire film system will be affected; the thickness of theAgTi film layer 6 is 0.05-10 nm, The preferred thickness is 1-8nm. If the film layer is too thin, it will not play its due role. If the film layer is too thick, it is easy to cause the whole film system to be delaminated, and the optical performance of the film system will also be greatly reduced. .

优选的，所述牺牲膜层4的厚度为0.1-8nm，优选厚度为1-5nm，若膜层太厚的话，会减弱整个膜系的粘接性能同时减弱其光学性能，若膜层太薄的话，其起不到应有的作用。Preferably, the thickness of thesacrificial film layer 4 is 0.1-8 nm, preferably 1-5 nm. If the film layer is too thick, the adhesive performance of the entire film system will be weakened and its optical performance will be weakened. If the film layer is too thin If so, it doesn't work as it should.

优选的，所述电介质膜层2、顶层电介质膜层7和保护膜层8的膜层厚度为1-100nm，这些膜层太薄的话起不到应有的效果，太厚的话则会严重影响光的透过效果，同时会影响膜层之间的粘接效果，且会增加制造成本。Preferably, the film thickness of thedielectric film layer 2, the topdielectric film layer 7 and theprotective film layer 8 is 1-100 nm. If these film layers are too thin, they will not have the desired effect, and if they are too thick, they will seriously affect the The light transmission effect will also affect the bonding effect between the film layers, and will increase the manufacturing cost.

具体的，所述的牺牲膜层4的材料可以为NiCr、Ti、NiCrO_x、Cr、NiCrMo、CrO_x、MoO_x、TiMo、TiMoO_x、NiTi、TiO_x和NiTiO_x中的任意一种或它们的任一组合。Specifically, the material of thesacrificial film layer 4 can be any one of NiCr, Ti, NiCrO_x , Cr, NiCrMo, CrO_x , MoO_x , TiMo, TiMoO_x , NiTi, TiO_x and NiTiO_x or any of them any combination of .

所述电介质膜层2、顶层电介质膜层7和保护膜层8的材料可以为SnO_x、TiO_x、SiO_x、SiN_x、ZnO_x、AlZnO_x、Zn_xSn_yO_n、ZrO_x、Zn_xTi_yO_n、NbO_x、Ti_xNb_yO_n、SiNO_x、ITO、AZO、IWO、BZO、GZO、IZO、IMO、ICO、ITIO、IGZO、氧化锡基材料和金属硫化物中的任意一种或它们的任一组合。The materials of thedielectric film layer 2, the topdielectric film layer 7 and theprotective film layer 8 can be SnO_x , TiO_x , SiO_x , SiN_x , ZnO_x ,_AlZnOx , Zn_x Sn_y On , ZrO_x , Zn_{Any of xTi y On , NbO x , Ti x Nb y On , SiNO x,ITO,AZO,IWO,} BZO, GZO, IZO, IMO, ICO, ITIO, IGZO, tin oxide based materials and metal sulfides one or any combination of them.

所述基板1为玻璃基板、聚酰亚胺基板、或具有太阳能电池结构的基板等。Thesubstrate 1 is a glass substrate, a polyimide substrate, or a substrate having a solar cell structure.

当然，在一些实施例中，所述锌锡氧化物膜层和AgTi膜层也可以是设置在银膜层与电介质膜层之间，或所述锌锡氧化物膜层和AgTi膜层设置在牺牲膜层之上，同时在银膜层与电介质膜层之间还设有锌锡氧化物膜层和/或AgTi膜层。Of course, in some embodiments, the zinc tin oxide film layer and the AgTi film layer may also be disposed between the silver film layer and the dielectric film layer, or the zinc tin oxide film layer and the AgTi film layer may be disposed between the silver film layer and the dielectric film layer. On the sacrificial film layer, a zinc tin oxide film layer and/or an AgTi film layer are also arranged between the silver film layer and the dielectric film layer.

当然，在一些实施例中，上述膜层组件中的牺牲膜层也可以是设置在银膜层下面，即膜层组件包括沿基板向上依次层叠的电介质膜层、牺牲膜层和银膜层。Of course, in some embodiments, the sacrificial film layer in the above-mentioned film layer assembly may also be disposed under the silver film layer, that is, the film layer assembly includes a dielectric film layer, a sacrificial film layer and a silver film layer that are sequentially stacked along the substrate upward.

此外，也可在沉积银膜层3之前先沉积一层牺牲膜层。In addition, a sacrificial film layer can also be deposited before depositing thesilver film layer 3 .

图2所示为本发明薄膜器件的另一种结构，其与图1所示的薄膜器件的区别为：膜层组件的数量为两个，两个膜层组件依次层叠设置，其具体结构为包括依次层叠的基板1、第一电介质膜层2、第一银膜层3、第一牺牲膜层4、第一锌锡氧化物膜层5、第一AgTi膜层6、第二电介质膜层21、第二银膜层31、第二牺牲膜层41、第二锌锡氧化物膜层51、第二AgTi膜层61、顶层电介质膜层7和保护膜层8。图2的薄膜器件相对于图1的薄膜器件，方块电阻更低。Fig. 2 shows another structure of the thin-film device of the present invention, which is different from the thin-film device shown in Fig. 1 in that the number of membrane-layer components is two, and the two membrane-layer components are stacked in sequence. The specific structure is as follows: It includes asubstrate 1, a firstdielectric film layer 2, a firstsilver film layer 3, a firstsacrificial film layer 4, a first zinc tinoxide film layer 5, a firstAgTi film layer 6, and a second dielectric film layer that are stacked insequence 21 . The secondsilver film layer 31 , the secondsacrificial film layer 41 , the second zinc tinoxide film layer 51 , the secondAgTi film layer 61 , the topdielectric film layer 7 and theprotective film layer 8 . The thin film device of FIG. 2 has a lower sheet resistance than the thin film device of FIG. 1 .

图3所示为本发明薄膜器件的另一种结构，其与图2所示的薄膜器件的区别为：膜层组件的数量为三个，三个膜层组件依次层叠，其具体结构为包括依次层叠的基板1、第一电介质膜层2、第一银膜层3、第一牺牲膜层4、第一锌锡氧化物膜层5、第一AgTi膜层6、第二电介质膜层21、第二银膜层31、第二牺牲膜层41、第二锌锡氧化物膜层51、第二AgTi膜层61、第三电介质膜层22、第三银膜层32、第三牺牲膜层42、第三锌锡氧化物膜层52、第三AgTi膜层62、顶层电介质膜层7和保护膜层8。图3的薄膜器件相对于图2的薄膜器件，方块电阻更低。Fig. 3 shows another structure of the thin film device of the present invention, which is different from the thin film device shown in Fig. 2 in that the number of membrane layer components is three, and the three membrane layer components are stacked in sequence, and the specific structure includes:Substrate 1, firstdielectric film layer 2, firstsilver film layer 3, firstsacrificial film layer 4, first zinc tinoxide film layer 5, firstAgTi film layer 6, seconddielectric film layer 21 stacked in sequence , the secondsilver film layer 31, the secondsacrificial film layer 41, the second zinc tinoxide film layer 51, the secondAgTi film layer 61, the thirddielectric film layer 22, the thirdsilver film layer 32, the thirdsacrificial film layer 42 , third zinc tinoxide film layer 52 , thirdAgTi film layer 62 , topdielectric film layer 7 andprotective film layer 8 . The thin film device of FIG. 3 has lower sheet resistance than the thin film device of FIG. 2 .

图4所示为本发明薄膜器件的另一种结构，其与图3所示的薄膜器件的区别为：膜层组件的数量为四个，四个膜层组件依次层叠，其具体结构为包括依次层叠的基板1、第一电介质膜层2、第一银膜层3、第一牺牲膜层4、第一锌锡氧化物膜层5、第一AgTi膜层6、第二电介质膜层21、第二银膜层31、第二牺牲膜层41、第二锌锡氧化物膜层51、第二AgTi膜层61、第三电介质膜层22、第三银膜层32、第三牺牲膜层42、第三锌锡氧化物膜层52、第三AgTi膜层62、、第四电介质膜层23、第四银膜层33、第四牺牲膜层43、第四锌锡氧化物膜层53、第四AgTi膜层63、顶层电介质膜层7和保护膜层8。图4的薄膜器件相对于图3的薄膜器件，方块电阻更低。FIG. 4 shows another structure of the thin-film device of the present invention, which is different from the thin-film device shown in FIG. 3 in that the number of membrane-layer components is four, and the four membrane-layer components are stacked in sequence. The specific structure includes:Substrate 1, firstdielectric film layer 2, firstsilver film layer 3, firstsacrificial film layer 4, first zinc tinoxide film layer 5, firstAgTi film layer 6, seconddielectric film layer 21 stacked in sequence , the secondsilver film layer 31, the secondsacrificial film layer 41, the second zinc tinoxide film layer 51, the secondAgTi film layer 61, the thirddielectric film layer 22, the thirdsilver film layer 32, the thirdsacrificial film layer 42, third zinc tinoxide film layer 52, thirdAgTi film layer 62, fourthdielectric film layer 23, fourthsilver film layer 33, fourthsacrificial film layer 43, fourth zinc tinoxide film layer 53 . The fourthAgTi film layer 63 , the topdielectric film layer 7 and theprotective film layer 8 . The thin film device of FIG. 4 has a lower sheet resistance than the thin film device of FIG. 3 .

下面将通过几个具体实施例来说明本发明的薄膜器件。以下涉及的实施例及对比例，均是在干净的、厚度为2.0mm的透明浮法玻璃原片(标记为玻璃基板2.0C)的空气面上依次镀上各膜层。The thin film device of the present invention will be described below through several specific embodiments. In the following examples and comparative examples, each film layer was sequentially plated on the air surface of a clean, 2.0 mm thick transparent float glass original sheet (marked as glass substrate 2.0C).

单片玻璃基板镀膜高温热处理后，镀膜玻璃基板的最外镀膜层为最外保护膜层，最外保护膜层向外依次和厚度为0.76mm的PVB、另外一片没有镀膜的厚度为2.0mm的透明浮法玻璃基板层压在一起，形成镀膜夹层玻璃。而形成的镀膜夹层玻璃需要通过敲击实验——最重要的物理性能测试之一，该实验是衡量膜层与PVB、玻璃之间粘结性能的检测方法。Solutia Europe s.a.公司将夹层玻璃敲击标准分为9级。根据敲击后碎玻璃粘在PVB上的量从少到多，规定标准等级为第1级至第9级。满足国标GB9656-2003要求的夹层玻璃需要符合的敲击等级为：第3级≤敲击等级≤第6级。After the single-piece glass substrate is coated with high temperature heat treatment, the outermost coating layer of the coated glass substrate is the outermost protective film layer. Transparent float glass substrates are laminated together to form coated laminated glass. The formed coated laminated glass needs to pass the knocking test, one of the most important physical performance tests, which is a test method to measure the bonding performance between the film layer and PVB and glass. Solutia Europe s.a. divides the laminated glass percussion standard into 9 grades. According to the amount of broken glass sticking to PVB after knocking, from less to more, the standard grades are specified as 1st to 9th. The percussion level that the laminated glass that meets the requirements of the national standard GB9656-2003 needs to meet is:level 3 ≤ percussion level ≤level 6.

敲击实验步骤为：The tapping experiment steps are:

a.从整个镀膜夹层玻璃上切下两块100×300mm的试验片；b.将两试样放置在-18℃±2℃下保存至少2小时；c.将试样从上述低温处取出放置在常温下1-2分钟，便放在试样箱上用铁锤敲击；d.敲击后试样允许恢复到室温再与标准样片对照，但要等到冷凝水挥发后；e.将试样认真与标准样片比较，就可以判断出敲击实验的等级。a. Cut two 100×300mm test pieces from the entire coated laminated glass; b. Store the two samples at -18℃±2℃ for at least 2 hours; c. Take the samples out of the above low temperature and place them At room temperature for 1-2 minutes, put it on the sample box and hit it with a hammer; d. After hitting, the sample is allowed to return to room temperature and then compared with the standard sample, but wait until the condensed water evaporates; e. If you compare it with the standard sample carefully, you can judge the level of the percussion test.

实施例1Example 1

在玻璃基板2.0C(基板1)上依次镀上厚度为38nm的Si₃N₄膜层；厚度为8nm的ZnO₂膜层作为电介质膜层2；厚度为12nm的银膜层3；厚度为2nm的NiCr膜层(牺牲膜层4)；厚度为15nm的锌锡氧化物膜层5，其中Sn的含量为30wt％；厚度为0.05nm的AgTi膜层6，其中Ti的含量为50at％；厚度为23nm的ZnSnO₂膜层(顶层电介质膜层7)；厚度为15nm的Si₃N₄膜层作为保护膜层8，得到可热处理镀膜玻璃，即薄膜器件，结构如图1所示。On the glass substrate 2.0C (substrate 1), a Si₃ N₄ film with a thickness of 38 nm is sequentially plated; a ZnO₂ film with a thickness of 8 nm is used as adielectric film 2; a silver film with a thickness of 12 nm is 3; The thickness is 2 nm The NiCr film layer (sacrificial film layer 4); the zinc tinoxide film layer 5 with a thickness of 15nm, wherein the content of Sn is 30wt%; theAgTi film layer 6 with a thickness of 0.05nm, wherein the content of Ti is 50at%; A 23nm_ZnSnO2 film layer (top dielectric film layer₇ ); a 15nm thick Si3N4 film layer as a protective film layer₈ to obtain heat-treatable coated glass, that is, a thin film device, the structure is shown in Figure 1.

光学性能测试：Optical performance test:

在热处理之前，单片镀膜玻璃的可见光透过率81.1％；580℃热处理10min后检测，单片镀膜玻璃的可见光透过率为82.3％，方块电阻为4.4Ω/□；然后洗涤、合片等工序后获得的镀膜夹层玻璃，经检测，其可见光透过率为77.2％。Before heat treatment, the visible light transmittance of a single piece of coated glass was 81.1%; after heat treatment at 580°C for 10 minutes, the visible light transmittance of a single piece of coated glass was 82.3%, and the sheet resistance was 4.4Ω/□; then washed, laminated, etc. The coated laminated glass obtained after the process was tested, and its visible light transmittance was 77.2%.

物理性能：Physical properties:

按照GB9656-2003，冲击实验、耐辐照实验、湿热循环实验等均能满足要求。经检测，敲击实验等级为4级，说明膜层与玻璃和PVB的附着力都很好。According to GB9656-2003, impact test, radiation resistance test, damp heat cycle test, etc. can all meet the requirements. After testing, the knocking test grade is 4, indicating that the adhesion of the film to glass and PVB is very good.

实施例2Example 2

在玻璃基板2.0C(基板1)上依次镀上厚度为35nm的Si₃N₄膜层；厚度为10nm的ZnO₂膜层作为电介质膜层2；厚度为12nm的银膜层3；厚度为1nm的NiCr膜层(牺牲膜层4)；厚度为10nm的锌锡氧化物膜层5，其中Sn的含量为15wt％；厚度为1nm的AgTi膜层6，其中Ti的含量为85at％；厚度为25nm的ZnSnO₂膜层(顶层电介质膜层7)；厚度为16nm的Si₃N₄膜层作为保护膜层8，得到可热处理镀膜玻璃，即薄膜器件，结构如图1所示。On the glass substrate 2.0C (substrate 1), a layer of Si₃ N₄ with a thickness of 35 nm is sequentially plated; a layer of ZnO₂ with a thickness of 10 nm is used as adielectric film layer 2; a layer of silver film with a thickness of 12 nm is 3; The NiCr film layer (sacrificial film layer 4); the zinc tinoxide film layer 5 with a thickness of 10nm, wherein the content of Sn is 15wt%; theAgTi film layer 6 with a thickness of 1nm, wherein the content of Ti is 85at%; 25nm_ZnSnO2 film layer (top dielectric film layer₇ ); 16nm thick Si3N4 film layer is used as protective film layer₈ to obtain heat-treatable coated glass, ie thin film device, the structure is shown in Figure 1.

光学性能测试：Optical performance test:

在热处理之前，单片镀膜玻璃的可见光透过率81.8％；580℃热处理10min后检测，单片镀膜玻璃的可见光透过率为82.7％，方块电阻为4.3Ω/□；然后洗涤、合片等工序后获得的镀膜夹层玻璃，经检测，其可见光透过率为77.5％。Before heat treatment, the visible light transmittance of a single piece of coated glass was 81.8%; after heat treatment at 580°C for 10 minutes, the visible light transmittance of a single piece of coated glass was 82.7%, and the sheet resistance was 4.3Ω/□; then washed, laminated, etc. The coated laminated glass obtained after the process was tested, and its visible light transmittance was 77.5%.

物理性能：Physical properties:

按照GB9656-2003，冲击实验、耐辐照实验、湿热循环实验等均能满足要求。经检测，敲击实验等级为4级，说明膜层与玻璃和PVB的附着力都很好。According to GB9656-2003, impact test, radiation resistance test, damp heat cycle test, etc. can all meet the requirements. After testing, the knocking test grade is 4, indicating that the adhesion of the film to glass and PVB is very good.

实施例3Example 3

在玻璃基板2.0C(基板)上依次镀上厚度为33nm的Si₃N₄膜层；厚度为8nm的ZnO₂膜层作为电介质膜层；厚度为0.5nm的AgTi膜层，其中Ti的含量为70at％；厚度为12nm的锌锡氧化物膜层，其中Sn的含量为10wt％；厚度为12nm的银膜层3；厚度为3.5nm的NiCr膜层(牺牲膜层)；厚度为25nm的ZnSnO₂膜层(顶层电介质膜层)；厚度为12nm的Si₃N₄膜层作为保护膜层，得到可热处理镀膜玻璃，即薄膜器件。On the glass substrate 2.0C (substrate), a layer of Si₃ N₄ with a thickness of 33nm is sequentially plated; a layer of ZnO₂ with a thickness of 8nm is used as a dielectric film; a layer of AgTi with a thickness of 0.5nm is used, wherein the content of Ti is 70at%; 12nm thick zinc tin oxide film, in which Sn content is 10wt%; 12nmthick silver film 3; 3.5nm thick NiCr film (sacrificial film); 25nm thick ZnSnO₂ film layers (top dielectric film layer); Si₃ N₄ film layer with a thickness of 12 nm is used as a protective film layer to obtain heat-treatable coated glass, that is, a thin-film device.

光学性能测试：Optical performance test:

在热处理之前，单片镀膜玻璃的可见光透过率80.7％；580℃热处理10min后检测，单片镀膜玻璃的可见光透过率为81.9％，方块电阻为4.2Ω/□；然后洗涤、合片等工序后获得的镀膜夹层玻璃，经检测，其可见光透过率为76.6％。Before heat treatment, the visible light transmittance of a single piece of coated glass was 80.7%; after heat treatment at 580°C for 10 minutes, the visible light transmittance of a single piece of coated glass was 81.9%, and the sheet resistance was 4.2Ω/□; then washed, laminated, etc. The coated laminated glass obtained after the process was tested, and its visible light transmittance was 76.6%.

物理性能：Physical properties:

按照GB9656-2003，冲击实验、耐辐照实验、湿热循环实验等均能满足要求。经检测，敲击实验等级为4级，说明膜层与玻璃和PVB的附着力都很好。According to GB9656-2003, impact test, radiation resistance test, damp heat cycle test, etc. can all meet the requirements. After testing, the knocking test grade is 4, indicating that the adhesion of the film to glass and PVB is very good.

实施例4Example 4

在玻璃基板2.0C(基板)上依次镀上厚度为40nm的ZnSnO₂膜层(电介质膜层)；厚度为1nm的AgTi膜层，其中Ti的含量为70at％；厚度为10nm的银膜层；厚度为0.1nm的NiTi膜层(牺牲膜层)；厚度为3nm的锌锡氧化物膜层，其中Sn的含量为15wt％；厚度为10nm的AgTi膜层，其中Ti的含量为85at％；厚度为75nm的ZnSnO_1.8膜层(电介质膜层)；厚度为11nm的银膜层；厚度为3nm的NiTi膜层(牺牲膜层)；厚度为5nm的锌锡氧化物膜层，其中Sn的含量为15wt％；厚度为2nm的AgTi膜层，其中Ti的含量为85at％；厚度为30nm的ZnSnO₂膜层(顶层电介质膜层)；厚度为7nm的TiO₂膜层作为保护膜层，得到可热处理镀膜玻璃，即薄膜器件。On the glass substrate 2.0C (substrate), a ZnSnO₂ film layer (dielectric film layer) with a thickness of 40nm is sequentially plated; a AgTi film layer with a thickness of 1nm, wherein the content of Ti is 70at%; a silver film layer with a thickness of 10nm; NiTi film (sacrificial film) with a thickness of 0.1nm; zinc tin oxide film with a thickness of 3nm, in which the content of Sn is 15wt%; AgTi film with a thickness of 10nm, in which the content of Ti is 85at%; 75nm ZnSnO_1.8 film (dielectric film); 11nm thick silver film; 3nm thick NiTi film (sacrificial film); 5nm thick zinc tin oxide film, wherein the content of Sn is 15wt%; AgTi film with a thickness of 2nm, in which the content of Ti is 85at%; ZnSnO2 film with a thickness of 30nm (top dielectric film)_;TiO2 film with a thickness of 7nm as a protective film layer to obtain heat-treatable Coated glass, that is, thin-film devices.

光学性能测试：Optical performance test:

在热处理之前，单片镀膜玻璃的可见光透过率79.6％；585℃热处理10min后检测，单片镀膜玻璃可见光透过率为82.4％，方块电阻为3.3Ω/□；然后洗涤、合片等工序后获得的镀膜夹层玻璃，经检测，其可见光透过率为75.2％。Before the heat treatment, the visible light transmittance of a single piece of coated glass was 79.6%; after heat treatment at 585°C for 10 minutes, the visible light transmittance of a single piece of coated glass was 82.4%, and the sheet resistance was 3.3Ω/□; then washing, laminating and other processes After the coating laminated glass obtained, the visible light transmittance is 75.2%.

物理性能：Physical properties:

按照GB9656-2003，冲击实验、耐辐照实验、湿热循环实验等均能满足要求。经检测，敲击实验等级为4级，说明膜层与玻璃和PVB的附着力都很好。According to GB9656-2003, impact test, radiation resistance test, damp heat cycle test, etc. can all meet the requirements. After testing, the knocking test grade is 4, indicating that the adhesion of the film to glass and PVB is very good.

实施例5Example 5

在玻璃基板2.0C(基板1)上依次镀上厚度为20nm的Si₃N₄膜层；厚度为18nm的ZnSnO_2.3膜层作为第一电介质膜层2；厚度为12nm的银膜层(第一银膜层3)；厚度为2nm的TiMo膜层(第一牺牲膜层4)；厚度为5nm的锌锡氧化物膜层(第一锌锡氧化物膜层5)，其中Sn的含量为10wt％；厚度为1nm的AgTi膜层(第一AgTi膜层6)，其中Ti的含量为50at％；厚度为75nm的ZnSnO_2.3膜层(第二电介质膜层21)；厚度为10nm的银膜层(第二银膜层31)；厚度为1nm的NiCr膜层(第二牺牲膜层41)；厚度为5nm的锌锡氧化物膜层(第二锌锡氧化物膜层51)，其中Sn的含量为10wt％；厚度为1nm的AgTi膜层(第二AgTi膜层61)，其中Ti的含量为80at％；厚度为70nm的ZnSnO_2.3膜层(第三电介质膜层22)；厚度为8nm的银膜层(第三银膜层32)；厚度为8nm的NiTi膜层(第三牺牲膜层42)；厚度为8nm的锌锡氧化物膜层(第三锌锡氧化物膜层52)，其中Sn的含量为10wt％；厚度为1nm的AgTi膜层(第三AgTi膜层62)，其中Ti的含量为90at％；厚度为25nm的AlZnO₂膜层(顶层电介质膜层7)；厚度为15nm的ZrO₂膜层作为保护膜层8，得到可热处理镀膜玻璃，即薄膜器件，结构如图3所示。On the glass substrate 2.0C (substrate 1), a Si₃ N₄ film with a thickness of 20 nm is sequentially plated; a ZnSnO_2.3 film with a thickness of 18 nm is used as the first dielectric film 2; a silver film with a thickness of 12 nm (the first Silver film layer 3); TiMo film layer (first sacrificial film layer 4) with a thickness of 2nm; zinc tin oxide film layer (first zinc tin oxide film layer 5) with a thickness of 5nm, wherein the content of Sn is 10wt %; AgTi film layer (first AgTi film layer 6) with a thickness of 1 nm, wherein the content of Ti is 50 at%; ZnSnO_2.3 film layer (second dielectric film layer 21) with a thickness of 75 nm; silver film layer with a thickness of 10 nm (the second silver film layer 31); the NiCr film layer with a thickness of 1 nm (the second sacrificial film layer 41); the zinc tin oxide film layer (the second zinc tin oxide film layer 51) with a thickness of 5 nm, wherein the Sn The content is 10wt%; the AgTi film layer (second AgTi film layer 61) with a thickness of 1nm, wherein the content of Ti is 80at%; the ZnSnO_2.3 film layer (third dielectric film layer 22) with a thickness of 70nm; the thickness of 8nm silver film layer (third silver film layer 32); NiTi film layer (third sacrificial film layer 42) with a thickness of 8 nm; zinc tin oxide film layer (third zinc tin oxide film layer 52) with a thickness of 8 nm, The content of Sn is 10wt%; the AgTi film layer (third AgTi film layer 62) with a thickness of 1nm, wherein the content of Ti is 90at%; the thickness of_AlZnO2 film layer (top dielectric film layer 7) with a thickness of 25nm; the thickness is A 15nm ZrO₂ film layer is used as the protective film layer 8 to obtain a heat-treatable coated glass, that is, a thin film device, the structure of which is shown in FIG. 3 .

光学性能测试：Optical performance test:

在热处理之前，单片镀膜玻璃的可见光透过率77.6％；590℃热处理10min后检测，单片镀膜玻璃可见光透过率为79.3％，方块电阻为2.1Ω/□；然后洗涤、合片等工序后获得的镀膜夹层玻璃，经检测，其可见光透过率为72.4％。Before heat treatment, the visible light transmittance of a single piece of coated glass was 77.6%; after heat treatment at 590°C for 10 minutes, the visible light transmittance of a single piece of coated glass was 79.3%, and the sheet resistance was 2.1Ω/□; then washing, laminating and other processes After the coating laminated glass obtained, the visible light transmittance is 72.4%.

物理性能：Physical properties:

按照GB9656-2003，冲击实验、耐辐照实验、湿热循环实验等均能满足要求。经检测，敲击实验等级为3级，说明膜层与玻璃和PVB的附着力都很好。According to GB9656-2003, impact test, radiation resistance test, damp heat cycle test, etc. can all meet the requirements. After testing, the knocking test grade is 3, indicating that the adhesion of the film to glass and PVB is very good.

实施例6Example 6

在玻璃基板2.0C(基板1)上依次镀上厚度为15nm的CdS膜层；厚度为15nm的Si₃N₄膜层；厚度为8nm的ZnO膜层作为第一电介质膜层2；厚度为12nm的银膜层(第一银膜层3)；厚度为2nm的TiMo膜层(第一牺牲膜层4)；厚度为5nm的锌锡氧化物膜层(第一锌锡氧化物膜层5)，其中Sn的含量为5wt％；厚度为2nm的AgTi膜层(第一AgTi膜层6)，其中Ti的含量为60at％；厚度为70nm的ZnSnO_2.3膜层；厚度为8nm的ZnO膜层作为第二电介质膜层21；厚度为10nm的银膜层(第二银膜层31)；厚度为2nm的NiCr膜层(第二牺牲膜层41)；厚度为7nm的锌锡氧化物膜层(第二锌锡氧化物膜层51)，其中Sn的含量为5wt％；厚度为1nm的AgTi膜层(第二AgTi膜层61)，其中Ti的含量为50at％；厚度为68nm的ZnSnO_2.3膜层(第三电介质膜层22)；厚度为8nm的银膜层(第三银膜层32)；厚度为3nm的NiTi膜层(第三牺牲膜层42)；厚度为8nm的锌锡氧化物膜层(第三锌锡氧化物膜层52)，其中Sn的含量为5wt％；厚度为0.1nm的AgTi膜层(第三AgTi膜层62)，其中Ti的含量为80at％；厚度为75nm的AlZnO₂膜层；厚度为8nm的ZnO膜层作为第四电介质膜层23；厚度为6nm的银膜层(第四银膜层33)；厚度为2nm的NiCr膜层(第四牺牲膜层43)；厚度为10nm的锌锡氧化物膜层(第四锌锡氧化物膜层53)，其中Sn的含量为5wt％；厚度为2nm的AgTi膜层(第四AgTi膜层63)，其中Ti的含量为95at％；厚度为30nm的AlZnO₂膜层(顶层电介质膜层7)；厚度为10nm的ZrO₂膜层作为保护膜层8，得到可热处理镀膜玻璃，即薄膜器件，结构如图4所示。On the glass substrate 2.0C (substrate 1), a CdS film with a thickness of 15 nm is sequentially plated; a Si₃ N₄ film with a thickness of 15 nm; a ZnO film with a thickness of 8 nm is used as the first dielectric film 2; the thickness is 12 nm The silver film layer (the first silver film layer 3); the TiMo film layer with a thickness of 2nm (the first sacrificial film layer 4); the zinc tin oxide film layer with a thickness of 5nm (the first zinc tin oxide film layer 5) , in which the content of Sn is 5wt%; the AgTi film with a thickness of 2nm (the first AgTi film 6), in which the content of Ti is 60at%; the ZnSnO_2.3 film with a thickness of 70nm; the ZnO film with a thickness of 8nm as The second dielectric film layer 21; the silver film layer with a thickness of 10 nm (the second silver film layer 31); the NiCr film layer with a thickness of 2 nm (the second sacrificial film layer 41); the zinc tin oxide film layer with a thickness of 7 nm ( The second zinc tin oxide film layer 51), wherein the content of Sn is 5wt%; the AgTi film layer with a thickness of 1nm (the second AgTi film layer 61), wherein the content of Ti is 50at%; the thickness of 68nm ZnSnO_2.3 film layer (third dielectric film layer 22); silver film layer (third silver film layer 32) with a thickness of 8 nm; NiTi film layer with a thickness of 3 nm (third sacrificial film layer 42); zinc tin oxide with a thickness of 8 nm The film layer (the third zinc tin oxide film layer 52), wherein the content of Sn is 5wt%; the AgTi film layer (the third AgTi film layer 62) with a thickness of 0.1nm, wherein the content of Ti is 80at%; the thickness is 75nm The AlZnO₂ film layer; the ZnO film layer with a thickness of 8 nm as the fourth dielectric film layer 23; the silver film layer with a thickness of 6 nm (the fourth silver film layer 33); the NiCr film layer with a thickness of 2 nm (the fourth sacrificial film layer 43); a zinc-tin oxide film layer (the fourth zinc-tin oxide film layer 53) with a thickness of 10 nm, wherein the content of Sn is 5wt%; an AgTi film layer with a thickness of 2 nm (the fourth AgTi film layer 63), wherein The content of Ti is 95 at%; the AlZnO₂ film with a thickness of 30 nm (top dielectric film 7); the ZrO₂ film with a thickness of 10 nm is used as the protective film 8 to obtain a heat-treatable coated glass, that is, a thin film device. The structure is shown in the figure 4 shown.

光学性能测试：Optical performance test:

在热处理之前，单片镀膜玻璃的可见光透过率74.9％；590℃热处理10min后检测，单片镀膜玻璃可见光透过率为76.1％，方块电阻为1.1Ω/□；然后洗涤、合片等工序后获得的镀膜夹层玻璃，经检测，其可见光透过率为68.8％。Before the heat treatment, the visible light transmittance of the single piece of coated glass was 74.9%; after 10min heat treatment at 590°C, the visible light transmittance of the single piece of coated glass was 76.1%, and the sheet resistance was 1.1Ω/□; then washing, laminating and other processes After the coating laminated glass obtained, the visible light transmittance is 68.8%.

物理性能：Physical properties:

按照GB9656-2003，冲击实验、耐辐照实验、湿热循环实验等均能满足要求。经检测，敲击实验等级为3级，说明膜层与玻璃和PVB的附着力都很好。According to GB9656-2003, impact test, radiation resistance test, damp heat cycle test, etc. can all meet the requirements. After testing, the knocking test grade is 3, indicating that the adhesion of the film to glass and PVB is very good.

实施例7Example 7

在玻璃基板2.0C上依次镀上厚度为40nm的ZnSnO₂膜层；厚度为10nm的银膜层；厚度为0.1nm的NiTi膜层；厚度为75nm的ZnSnO_1.8膜层；厚度为11nm的银膜层；厚度为3nm的NiTi膜层；厚度为30nm的ZnSnO₂膜层；厚度为7nm的TiO₂膜层作为保护膜层，得到可热处理镀膜玻璃，即薄膜器件。On the glass substrate 2.0C, a ZnSnO₂ film with a thickness of 40 nm; a silver film with a thickness of 10 nm; a NiTi film with a thickness of 0.1 nm; a ZnSnO_1.8 film with a thickness of 75 nm; a silver film with a thickness of 11 nm layer; NiTi film with a thickness of 3nm; ZnSnO2 film with a thickness of 30nm_;TiO2 film with a thickness of 7nm as a protective film layer to obtain heat-treatable coated glass, that is, a thin film device.

光学性能测试：Optical performance test:

在热处理之前，单片镀膜玻璃的可见光透过率77.8％；585℃热处理10min后检测，单片镀膜玻璃的可见光透过率为79.6％，方块电阻为4.4Ω/□；然后洗涤、合片等工序后获得的镀膜夹层玻璃，经检测，其可见光透过率为73.6％。Before the heat treatment, the visible light transmittance of a single piece of coated glass was 77.8%; after heat treatment at 585°C for 10 minutes, the visible light transmittance of a single piece of coated glass was 79.6%, and the sheet resistance was 4.4Ω/□; then washed, laminated, etc. The coated laminated glass obtained after the process was tested, and its visible light transmittance was 73.6%.

物理性能：Physical properties:

按照GB9656-2003，冲击实验、耐辐照实验、湿热循环实验等均能满足要求。经检测，敲击实验等级为3级，说明膜层与玻璃和PVB的附着力都很好。According to GB9656-2003, impact test, radiation resistance test, damp heat cycle test, etc. can all meet the requirements. After testing, the knocking test grade is 3, indicating that the adhesion of the film to glass and PVB is very good.

实施例8Example 8

将实施例4制得的镀膜玻璃进行高温热处理，使其在620℃的加热炉内停留14min，然后测试单片镀膜玻璃的方块电阻为4.9Ω/□。The coated glass prepared in Example 4 was subjected to high-temperature heat treatment to stay in a heating furnace at 620° C. for 14 minutes, and then the sheet resistance of a single piece of coated glass was tested to be 4.9Ω/□.

将该单片膜玻璃通过合片等工序后获得的镀膜夹层玻璃按照GB9656-2003，冲击实验、耐辐照实验、湿热循环实验等均能满足要求。经检测，敲击实验等级为3级，说明膜层与玻璃和PVB的附着力都很好。The coated laminated glass obtained after the single film glass is passed through the process of lamination and other processes can meet the requirements of the impact test, the radiation resistance test, and the wet heat cycle test according to GB9656-2003. After testing, the knocking test grade is 3, indicating that the adhesion of the film to glass and PVB is very good.

实施例9Example 9

将实施例7制得的镀膜玻璃进行高温热处理，使其在620℃的加热炉内停留14min，然后测试单片镀膜玻璃的方块电阻为22.3Ω/□。The coated glass prepared in Example 7 was subjected to high temperature heat treatment to stay in a heating furnace at 620° C. for 14 minutes, and then the sheet resistance of a single piece of coated glass was tested to be 22.3Ω/□.

将该单片镀膜玻璃通过合片等工序后获得的镀膜夹层玻璃按照GB9656-2003，冲击实验、耐辐照实验、湿热循环实验等均不能满足要求。经检测，敲击实验等级为2级，说明膜层与玻璃和PVB的附着力变差。According to GB9656-2003, the coated laminated glass obtained after the single-piece coated glass is passed through the process of lamination and other processes can not meet the requirements of impact test, radiation resistance test, and wet heat cycle test. After testing, the knocking test grade was 2, indicating that the adhesion of the film layer to the glass and PVB became poor.

实施例8与实施例9的比较可以看出：实施例8的方块电阻与实施例4的方块电阻相差不大，而实施例9的方块电阻比实施例7的方块电阻增大了很多，说明经过实施例9的高温热处理后其银膜层受到一定程度的破坏；从另一方面讲，采用在牺牲膜层之上形成锌锡氧化物膜层和AgTi膜层，锌锡氧化物膜层中Sn的含量≤30wt％，AgTi膜层中Ti的含量≥50at％；或在银膜层与电介质膜层之间形成锌锡氧化物膜层和AgTi膜层，锌锡氧化物膜层中Sn的含量≤30wt％，AgTi膜层中Ti的含量≥50at％；或在牺牲膜层之上形成锌锡氧化物膜层和AgTi膜层，同时在所述银膜层与电介质膜层之间形成锌锡氧化物膜层和/或AgTi膜层，锌锡氧化物膜层中Sn的含量≤30wt％，AgTi膜层中Ti的含量≥50at％；可以提高整个膜系结构的耐高温性能、耐机械性能和化学稳定性。It can be seen from the comparison between Example 8 and Example 9: the sheet resistance of Example 8 is not much different from the sheet resistance of Example 4, and the sheet resistance of Example 9 is much larger than that of Example 7. After the high temperature heat treatment in Example 9, the silver film is damaged to a certain extent; on the other hand, the zinc tin oxide film and the AgTi film are formed on the sacrificial film, and the zinc tin oxide film is formed on the sacrificial film. The content of Sn is ≤30wt%, and the content of Ti in the AgTi film is ≥50at%; or a zinc-tin oxide film and an AgTi film are formed between the silver film and the dielectric film, and the content of Sn in the zinc-tin oxide film is The content of Ti in the AgTi film is ≤30wt%, and the content of Ti in the AgTi film is ≥50at%; or a zinc tin oxide film and an AgTi film are formed on the sacrificial film, and zinc is formed between the silver film and the dielectric film at the same time. Tin oxide film and/or AgTi film, the content of Sn in the zinc tin oxide film is ≤30wt%, and the content of Ti in the AgTi film is ≥50at%; it can improve the high temperature resistance and mechanical resistance of the whole film structure performance and chemical stability.

本发明的薄膜器件可以用于制作成夹层薄膜器件或中空薄膜器件。The thin film device of the present invention can be used to make a sandwich thin film device or a hollow thin film device.

尽管结合优选实施方案具体展示和介绍了本发明，但所属领域的技术人员应该明白，在不脱离所附权利要求书所限定的本发明的精神和范围内，在形式上和细节上可以对本发明做出各种变化，均为本发明的保护范围。Although the present invention has been particularly shown and described in connection with preferred embodiments, it will be understood by those skilled in the art that changes in form and detail may be made to the present invention without departing from the spirit and scope of the invention as defined by the appended claims. Various changes are made within the protection scope of the present invention.

Claims (10)

Translated fromChinese

1.一种薄膜器件，包括依次向上层叠的基板、膜层组件、顶层电介质膜层和保护膜层，所述膜层组件包括沿基板向上依次层叠的电介质膜层、银膜层和牺牲膜层，或所述膜层组件包括沿基板向上依次层叠的电介质膜层、牺牲膜层和银膜层，其特征在于：所述膜层组件还包括锌锡氧化物膜层和AgTi膜层，所述锌锡氧化物膜层和AgTi膜层层叠在牺牲膜层上面；或所述锌锡氧化物膜层和AgTi膜层层叠在银膜层与电介质膜层之间；或所述锌锡氧化物膜层和AgTi膜层层叠在牺牲膜层上面，同时所述锌锡氧化物膜层和/或AgTi膜层还层叠在银膜层与电介质膜层之间，所述锌锡氧化物膜层中Sn的含量≤30wt％，所述AgTi膜层中Ti的含量≥50at％。1. A thin film device, comprising a substrate, a film layer assembly, a top dielectric film layer and a protective film layer that are stacked up in sequence, the film layer assembly comprising a dielectric film layer, a silver film layer and a sacrificial film layer stacked up in sequence along the substrate , or the film layer assembly includes a dielectric film layer, a sacrificial film layer and a silver film layer sequentially stacked up along the substrate, characterized in that: the film layer assembly also includes a zinc tin oxide film layer and an AgTi film layer, the The zinc tin oxide film layer and the AgTi film layer are stacked on the sacrificial film layer; or the zinc tin oxide film layer and the AgTi film layer are stacked between the silver film layer and the dielectric film layer; or the zinc tin oxide film layer layer and the AgTi film layer are stacked on the sacrificial film layer, and the zinc tin oxide film layer and/or the AgTi film layer are also stacked between the silver film layer and the dielectric film layer, and the zinc tin oxide film layer in the Sn The content of ≤30wt%, the content of Ti in the AgTi film layer ≥50at%.2.根据权利要求1所述的薄膜器件，其特征在于：所述锌锡氧化物膜层中Sn的含量≤20wt％；所述AgTi膜层中Ti的含量≥70at％。2 . The thin film device according to claim 1 , wherein: the content of Sn in the zinc tin oxide film layer is ≤20 wt %; the content of Ti in the AgTi film layer is ≥ 70 at %. 3 .3.根据权利要求2所述的薄膜器件，其特征在于：所述锌锡氧化物膜层中Sn的含量≤15wt％；所述AgTi膜层中Ti的含量≥85at％。3 . The thin film device according to claim 2 , wherein: the content of Sn in the zinc tin oxide film layer is less than or equal to 15 wt %; the content of Ti in the AgTi film layer is more than or equal to 85 at %. 4 .4.根据权利要求1所述的薄膜器件，其特征在于：所述锌锡氧化物膜层的厚度≤15nm；所述AgTi膜层的厚度为0.05-10nm。4 . The thin film device according to claim 1 , wherein the thickness of the zinc tin oxide film layer is less than or equal to 15 nm; the thickness of the AgTi film layer is 0.05-10 nm. 5 .5.根据权利要求1所述的薄膜器件，其特征在于：所述牺牲膜层的材料为NiCr、Ti、NiCrO_x、Cr、NiCrMo、CrO_x、MoO_x、TiMo、TiMoO_x、NiTi、TiO_x和NiTiO_x中的任意一种或它们的任一组合。5. The thin film device according to claim 1, wherein the material of the sacrificial film layer is NiCr, Ti,_NiCrOx , Cr, NiCrMo, CrOx,_MoOx ,_TiMo ,_TiMoOx , NiTi,_TiOx and any one of NiTiO_x or any combination thereof.6.根据权利要求1所述的薄膜器件，其特征在于：所述牺牲膜层的厚度为0.1-8nm。6 . The thin film device according to claim 1 , wherein the thickness of the sacrificial film layer is 0.1-8 nm. 7 .7.根据权利要求1-6任意一项所述的薄膜器件，其特征在于：所述膜层组件的数量为两个，两个膜层组件依次层叠设置。7 . The thin film device according to claim 1 , wherein the number of the membrane layer components is two, and the two membrane layer components are stacked in sequence. 8 .8.根据权利要求1-6任意一项所述的薄膜器件，其特征在于：所述膜层组件的数量为三个，三个膜层组件依次层叠设置。8 . The thin-film device according to claim 1 , wherein the number of the membrane-layer components is three, and the three membrane-layer components are stacked in sequence. 9 .9.根据权利要求1-6任意一项所述的薄膜器件，其特征在于：所述膜层组件的数量为四个，四个膜层组件依次层叠设置。9 . The thin film device according to claim 1 , wherein the number of the membrane layer components is four, and the four membrane layer components are stacked in sequence. 10 .10.根据权利要求1-6任意一项所述的薄膜器件，其特征在于：该薄膜器件用于制作成夹层薄膜器件或中空薄膜器件。10. The thin-film device according to any one of claims 1-6, wherein the thin-film device is used to make a sandwich thin-film device or a hollow thin-film device.

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