CN111239894A - Method for continuously manufacturing buried optical waveguide by using voltage-segmented electric field to assist ion migration - Google Patents
Method for continuously manufacturing buried optical waveguide by using voltage-segmented electric field to assist ion migrationDownload PDFInfo
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- CN111239894A CN111239894ACN202010083821.1ACN202010083821ACN111239894ACN 111239894 ACN111239894 ACN 111239894ACN 202010083821 ACN202010083821 ACN 202010083821ACN 111239894 ACN111239894 ACN 111239894A
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C21/00—Treatment of glass, not in the form of fibres or filaments, by diffusing ions or metals in the surface
- C03C21/001—Treatment of glass, not in the form of fibres or filaments, by diffusing ions or metals in the surface in liquid phase, e.g. molten salts, solutions
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/134—Integrated optical circuits characterised by the manufacturing method by substitution by dopant atoms
- G02B6/1345—Integrated optical circuits characterised by the manufacturing method by substitution by dopant atoms using ion exchange
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/12038—Glass (SiO2 based materials)
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Abstract
Description
Technical Field
The invention relates to the field of optical devices and integrated optics, in particular to a method for continuously manufacturing a buried optical waveguide by using voltage-segmented electric field-assisted ion migration.
Background
In 1969, s.e.miller proposed the concept of integrated optics, which was based on the idea of fabricating optical waveguides on the surface of the same substrate (or chip) and then implementing integrated fabrication of various devices such as light sources, couplers, filters, etc. By such integration, miniaturization, weight reduction, and stabilization of the optical system are achieved, and device performance is improved.
Integrated optical devices fabricated on glass substrates by ion exchange have received considerable attention from industry and researchers. Glass-based integrated optical waveguide devices based on ion exchange technology have several excellent properties, including: low transmission loss, easy doping of high-concentration rare earth ions, matching with the optical characteristics of the optical fiber, low coupling loss, good environmental stability, easy integration, low cost and the like. In 1972, the first article on ion exchange fabrication of optical waveguides was published, and the initiation of research on glass-based integrated optical devices was marked. Since then, research institutions in various countries have invested a great deal of manpower and financial resources in developing glass-based integrated optical devices. Up to now, integrated optical devices on several glass substrates have been mass-produced and serialized, successfully used in optical communication, optical interconnection and optical sensing networks, and have shown great competitiveness.
The ion exchange technique commonly used is carried out in a box-type high-temperature furnace (1), as shown in fig. 1. In a box-type high-temperature furnace (1) at ion exchange temperature, a crucible (3) containing a fused salt (2) containing doped ions is placed. A mask (5) for an optical waveguide is formed on the surface of a glass substrate (4) by a microfabrication process, and a microfabrication technique such as photolithography is used to form a mask (5) corresponding to the optical waveguide structureThe hollow structure of (2) as an ion exchange window; then, a glass substrate (4) with a mask (5) is placed on a support (6) in a crucible (3) and immersed in a molten salt (2) containing dopant ions. The doped ions in the doped ion-containing molten salt (2) pass through an ion exchange window formed by the mask (5) and Na in the glass substrate (4)+And exchanging, wherein the doped ions enter the surface of the glass substrate (4) and diffuse to form an ion doped region (7) on the surface of the glass, and the ion doped region is used as a core layer of the surface optical waveguide.
Generally speaking, due to the lateral diffusion of ions in the manufacturing process of the optical waveguide, the ion doped region (7) on the surface of the glass is flat, so that the mode field distribution is asymmetric, and the coupling loss of the optical waveguide and the single-mode optical fiber is large; on the other hand, the ion doped region (7) on the glass surface is positioned on the surface of the glass substrate, and the scattering of the optical waveguide on the glass surface can introduce high transmission loss.
The buried optical waveguide can improve the symmetry of the refractive index distribution of the optical waveguide core layer, further improve the symmetry of the mode field distribution of the optical waveguide, and reduce the coupling loss of the optical waveguide device and the optical fiber. Meanwhile, the core part of the optical waveguide is embedded below the surface of the glass, so that the scattering of the optical waveguide generated on the surface of the glass is eliminated, and the transmission loss of the device is reduced. The buried optical waveguide is usually manufactured in a box type high-temperature furnace (1) in a mode of electric field assisted ion migration. As shown in fig. 2, the mask (5) is removed from the glass substrate (4) after the primary ion exchange, and then the electric field assisted ion transfer is performed. One end of a quartz tube (13) with the diameter equivalent to that of the glass substrate (4) is bonded with the glass substrate (4) through a high-temperature bonding agent (14) to form a bottom closed cavity which is arranged on a bracket (6) in the crucible (3). Injecting fused salt (8) without doping ions into a bottom closed cavity formed by the glass substrate (4) and the quartz tube at the ion transfer temperature, and inserting a positive electrode (9) into the fused salt; a molten salt (8) containing no dopant ion is also injected into the crucible (3), and a negative electrode (10) is inserted into the molten salt. The positive electrode (9) and the negative electrode (10) are respectively connected with the positive electrode and the negative electrode of a direct current power supply (12) through electrode leads (11). Keeping the temperature of the furnace unchanged, and carrying out electric field assisted ion migration. In the process, under the action of direct-current voltage, an ion doped region (7) on the surface of the glass formed by first ion exchange enters the position below the surface of the glass substrate (4) to form an ion doped region (20) embedded into the surface of the glass, and the glass-based surface optical waveguide becomes a buried optical waveguide, as shown in figure 3, the transmission loss and the coupling loss of the buried optical waveguide are effectively reduced.
Relevant studies (cf. HaoYinlei, Wang Hongjian, Yang Jianyi, Jiang Xiaooqing, ZhouQiang, Wang Minghua, Experiments and Analysis on Joule Heating Effect Field-Assisted Ion-diffusion, Optical Engineering,2012,51(1):014601) show that, during the electric Field-Assisted Ion diffusion process, since the electric Field strength inside the glass substrate (4) is of the order of 100V/mm, correspondingly, the current density flowing through the glass substrate (4) is of the order of mA/cm2Of the order of magnitude. As a result, the power density of joule heat on the glass substrate (4) was found to be 1W/cm3Of the order of magnitude. Such a power density will cause the temperature of the glass substrate (4) to be more than 20 ℃ higher than the nominal temperature. Furthermore, because the heat dissipation conditions of the central part and the edge part of the glass substrate (4) are different, the temperature of the center and the edge of the glass substrate (4) is also greatly different. Since the temperature of the glass substrate (4) directly influences the migration speed of ions in the glass under the driving of an electric field, the temperature difference influences the uniformity of the diffusion depth of the optical waveguide on the glass substrate, and further influences the performance of an optical device. Moreover, since the electrical conductivity of the glass substrate (4) increases with increasing temperature, the increase in electrical conductivity further increases the joule heating power, which may cause the glass substrate to break down or be damaged as the temperature of the glass substrate continues to increase under constant voltage conditions.
Therefore, the optical characteristics of the ion exchange optical waveguide manufactured by the method depend on the electric field assisted ion migration time and the temperature of the box type high temperature furnace (1). The existing electric field assisted ion migration mode is adopted, and the problems in many aspects exist when the method is used for the mass production of the optical waveguide chips. Firstly, the capacity of a general box-type high-temperature furnace (1) is limited, and the number of glass substrates which can be accommodated by the high-temperature furnace is influenced by considering the non-uniformity of the temperature in the furnace chamber of the box-type high-temperature furnace (1), so that the production efficiency is limited, and the average energy consumption of chips is also improved. Secondly, the large-scale production needs a plurality of box-type high-temperature furnaces (1) to work simultaneously, the temperature difference between the high-temperature furnaces, the operation speed of operators and the difference between operation habits increase the distribution range of the optical parameters of the glass-based optical waveguide, and the performance optimization of the optical waveguide chip is more difficult. The existing electric field auxiliary ion migration technology based on the box type high temperature furnace (1) cannot be suitable for the production of large-scale and batch glass-based optical waveguide chips. Thirdly, due to joule heat effect, only a low voltage can be applied to the glass substrate during the electric field assisted ion diffusion process, and a longer time is required to obtain a required optical waveguide burying depth, limiting the yield of the optical waveguide chip.
Disclosure of Invention
In order to solve the problems in the background technology, the invention provides a method for continuously manufacturing a buried optical waveguide by voltage segmented electric field assisted ion migration, which applies different voltages to a glass substrate (4) in a segmented manner in the electric field assisted ion migration process by a continuous electric field assisted ion migration manner to manufacture the glass-based surface optical waveguide into the glass-based buried optical waveguide.
The technical scheme adopted by the invention for solving the technical problems is as follows: a method for continuously manufacturing a buried optical waveguide by voltage-segmented electric field-assisted ion migration is characterized in that electric field-assisted ion migration is performed on a glass substrate (4) subjected to primary ion exchange in a crucible (3) in a tunnel-type high-temperature furnace (15) in a continuous manufacturing mode. As shown in fig. 4. Placing a tunnel type high temperature furnace (15), wherein furnace mouths are respectively used as an inlet end and an outlet end at two ends of the tunnel type high temperature furnace (15), and a horizontal conveyor belt (16) is arranged between the inlet end and the outlet end of the tunnel type high temperature furnace (15); a crucible (3) and a positive electrode slide rod are arranged in the tunnel type high temperature furnace (15); molten salt (8) without doping ions is arranged in the crucible (3), a negative electrode (10) is inserted into the molten salt, and the negative electrode (10) is grounded through a lead (21); one end of a quartz tube (13) with the diameter equivalent to that of the glass substrate (4) is bonded with the glass substrate (4) through a high-temperature bonding agent (14) to form a bottom closed cavity and is arranged in a quartz basket (19), the quartz basket (19) is suspended on a conveyor belt (16), and the glass substrate (4) is immersed below the liquid level of the fused salt (8) without doping ions in the crucible (3). Under the ion migration temperature, injecting fused salt (8) without doping ions into a bottom closed cavity formed by a glass substrate (4) and a quartz tube (13), inserting a positive electrode (9) into the fused salt, fixing the relative position of the positive electrode (9) and the bottom closed cavity, and suspending the positive electrode on a positive electrode slide rod through an electrode lead (11); the transmission wheel of the transmission belt (16) is connected with a driving mechanism (17), and under the action of the driving mechanism (17), the quartz flower basket (19) together with the glass substrate (4), the quartz tube (13), the positive electrode (9), the electrode lead (11) and the fused salt (8) without doped ions in the quartz flower basket are conveyed into the tunnel-type high-temperature furnace (15) from the inlet end of the tunnel-type high-temperature furnace (15) and are conveyed to the outlet end of the tunnel-type high-temperature furnace (15) after the migration reaction of the high-temperature ions. The ion exchange buried optical waveguide manufacturing method is characterized in that: the positive electrode slide rod is formed by sequentially connecting a first positive electrode slide rail (181), an insulating slide rail joint (22), a second positive electrode slide rail (182), an insulating slide rail joint (22) and a third positive electrode slide rail (183); the first positive electrode slide rail (181) is connected with the positive electrode of the first direct current power supply (121) through a lead (21), the second positive electrode slide rail (182) is connected with the positive electrode of the second direct current power supply (122) through the lead (21), the third positive electrode slide rail (183) is connected with the positive electrode of the third direct current power supply (123) through the lead (21), and the negative electrodes of the first direct current power supply (121), the second positive electrode slide rail (182) and the third positive electrode slide rail (183) are all grounded.
During the process that the quartz flower basket (19), the glass substrate (4) therein, the quartz tube (13), the positive electrode (9), the electrode lead wire (11), the fused salt (8) without doping ions are conveyed from the inlet end to the outlet end of the tunnel type high-temperature furnace (15), the electrode cathode wire connected with the positive electrode (9) slides on the positive electrode slide rod and keeps good contact. In the conveying process, under the sequential action of the voltages of the three direct current power supplies, in the glass substrate (4), the ion doped region (7) on the surface of the glass migrates to the position below the surface of the glass substrate to form an ion doped region (20) embedded into the surface of the glass, and the glass-based surface optical waveguide becomes a buried optical waveguide.
The material of the glass substrate (4) is silicate glass, phosphate glass or borate glass.
The first direct current power supply (121), the second direct current power supply (122) and the third direct current power supply (123) are all regulated power supply with regulated voltage values output externally.
The positive electrode (9) and the negative electrode (10) are gold electrodes, platinum electrodes or graphite electrodes.
The first positive electrode slide rail (181), the second positive electrode slide rail (182) and the third positive electrode slide rail (183) are all made of conductive materials; the insulating sliding rail joint (22) is made of high-temperature-resistant insulating materials; the insulating slide rail joint (22) ensures the insulation between the first positive electrode slide rail (181) and the second positive electrode slide rail (182) and the insulation between the second positive electrode slide rail (182) and the third positive electrode slide rail (183).
Compared with the common glass-based optical waveguide chip manufacturing technology, the invention has the beneficial effects that: the consistency of the optical waveguide chip is improved, the qualification rate of the chip is more conveniently controlled, the investment of fixed assets is reduced, the production efficiency of the optical waveguide chip is improved, and the energy consumption of a unit chip is reduced. Moreover, the method can effectively control the problem of uneven chip performance caused by the Joule heat effect generated by a direct current electric field in the buried optical waveguide manufacturing process, and avoid the risk of breakdown of the glass substrate due to continuous temperature rise.
Drawings
FIG. 1 is a schematic diagram of an apparatus for fabricating surface optical waveguides on a glass substrate using prior art techniques.
FIG. 2 is a schematic diagram of a prior art apparatus for forming a surface optical waveguide on a surface of a glass substrate into a buried optical waveguide.
Fig. 3 is a schematic cross-sectional view of a buried optical waveguide.
FIG. 4 is a schematic diagram of an apparatus for forming a surface optical waveguide on a surface of a glass substrate into a buried optical waveguide by using the method of the present invention.
In the figure: 1. a box-type high-temperature furnace; 2. a molten salt containing dopant ions; 3. a crucible; 4. a glass substrate; 5. masking; 6. a support; 7. an ion-doped region on the glass surface; 8. a fused salt free of dopant ions; 9. a positive electrode; 10. a negative electrode; 11. an electrode lead; 121. a first DC power supply; 122. a second DC power supply; 123. a third DC power supply; 13. a quartz tube; 14. a high temperature binder; 15. a tunnel type high temperature furnace; 16. a conveyor belt; 17. a drive mechanism; 181. a first positive electrode slide rail; 182. a second positive electrode slide rail; 183. a third positive electrode slide rail; 19. a quartz basket; 20. an ion-doped region embedded in the surface of the glass; 21. a wire; 22. an insulating sliding rail joint.
Detailed Description
The invention relates to a method for continuously manufacturing buried optical waveguides by using voltage-segmented electric field-assisted ion migration, which respectively uses Ag+The specific implementation of the continuous production of the glass-based ion exchange surface optical waveguide chip is described by taking a doped glass-based buried single-mode optical waveguide and a buried multi-mode optical waveguide as examples.
Example 1: making of Ag+Doped glass-based buried single-mode optical waveguide
The required equipment is as follows: the device comprises a tunnel type high-temperature furnace (15) with the length of 6 meters, a conveyor belt (16) and a driving mechanism (17), wherein the tunnel type high-temperature furnace is a positive electrode slide bar formed by sequentially connecting a first positive electrode slide rail (181) with the length of 1.5 meters, a second positive electrode slide rail (182) with the length of 2.0 meters, a third positive electrode slide rail (183) with the length of 3.0 meters and an insulating slide rail joint (22). Wherein the drive mechanism (17) can be infinitely variable.
A fused salt (8) free of dopant ions, here Ca (NO)3)2With NaNO3The mixed molten salt of (3) in a mol ratio of 20: 80.
By Ag+/Na+Surface waveguide silicate glass substrate (4) made by ion exchange technology, Ag on the glass surface+The transverse size of the ion doping area (7) is 2-10 microns; the thickness of the glass substrate (4) is 0.5-2.5 mm.
50 crucibles (3), 50 positive electrodes (9), 50 negative electrodes (10), 50 electrode leads (11), 1 direct current power supply I (121), a direct current power supply II (122) and a direct current power supply III (123), 50 quartz tubes (13), high-temperature adhesive (14), 50 quartz baskets (19) and 4 wires (21) are prepared.
The method mainly comprises the following steps:
(A) the temperature of the tunnel type high temperature furnace (15) is raised to 300 ℃ and kept. The rotating speed of the driving mechanism (17) is adjusted to make the transmission speed of the conveyor belt (16) be 0.8 mm/s. The positive pole of the first direct current power supply (121) and the first positive electrode slide rail (181) are connected by a lead (21), the positive pole of the second direct current power supply (122) and the second positive electrode slide rail (182) are connected, and the positive pole of the third direct current power supply (123) and the third positive electrode slide rail (183) are connected by a lead (21); the cathodes of the first direct current power supply (121), the second positive electrode slide rail (182) and the third positive electrode slide rail (183) are all grounded; the output voltage of the first direct current power supply (121) is adjusted to 300-400 volts, the output voltage of the second direct current power supply (122) is adjusted to 250-300 volts, the output voltage of the second direct current power supply (123) is adjusted to 200-250 volts, the molten salt (8) without doping ions is injected into the crucible (3), the negative electrode (10) is inserted into the crucible (3), and the negative electrode is grounded through the electrode lead (11);
(B) bonding a glass substrate (4) to one end of a quartz tube (13) by using a high-temperature bonding agent (14) to ensure tight joint, and preserving heat at 200 ℃ for 1 hour to solidify the high-temperature bonding agent (14);
(C) putting a glass substrate (4) and a bottom closed cavity of a quartz tube (13) into a quartz basket (19), suspending the quartz basket (19) on a conveyor belt (16) at the inner outlet end (left end) of a tunnel type high-temperature furnace (15), and immersing the glass substrate (4) into a fused salt (8) which does not contain doped ions and is in a crucible (3);
(D) injecting fused salt (8) without doping ions into the closed cavities at the bottoms of the glass substrate (4) and the quartz tube (13);
(E) inserting a positive electrode (9) into the bottom closed cavities of the glass substrate (4) and the quartz tube (13), fixing the relative position between the positive electrode (9) and the bottom closed cavities, and connecting the positive electrode (9) to a positive electrode slide rod formed by sequentially connecting a first positive electrode slide rail (181), a second positive electrode slide rail (182), a third positive electrode slide rail (183) and an insulating slide rail joint (22) through an electrode lead (11);
(F) performing the same operation on a new glass substrate (4) on a conveyor belt (16) at the outlet end (left end) of the tunnel type high-temperature furnace (15) every 5min according to the sequence of (B) - (C) - (D) - (E);
(G) after the crucible (3) which is placed for the first time and is internally provided with the glass substrate (4) is conveyed to the outlet end (right end) of the tunnel type high temperature furnace (15), the glass substrate (4) is taken out and cleaned at intervals of 5 min.
Example 2: making of Ag+Doped glass-based buried multimode optical waveguide
The required equipment is as follows: the device comprises a tunnel type high-temperature furnace (15) with the length of 6 meters, a conveyor belt (16) and a driving mechanism (17), wherein the tunnel type high-temperature furnace is a positive electrode slide bar formed by sequentially connecting a first positive electrode slide rail (181) with the length of 1.5 meters, a second positive electrode slide rail (182) with the length of 2.0 meters, a third positive electrode slide rail (183) with the length of 3.0 meters and an insulating slide rail joint (22). Wherein the drive mechanism (17) can be infinitely variable.
A fused salt (8) free of dopant ions, here Ca (NO)3)2With NaNO3The mixed molten salt of (3) in a mol ratio of 20: 80.
By Ag+/Na+Surface waveguide silicate glass substrate (4) made by ion exchange technology, Ag on the glass surface+The transverse size of the ion doping area (7) is 5-30 microns; the thickness of the glass substrate (4) is 0.5-2.5 mm.
50 crucibles (3), 50 positive electrodes (9), 50 negative electrodes (10), 50 electrode leads (11), 1 direct current power supply I (121), a direct current power supply II (122) and a direct current power supply III (123), 50 quartz tubes (13), high-temperature adhesive (14), 50 quartz baskets (19) and 4 wires (21) are prepared.
The method mainly comprises the following steps:
(A) the temperature of the tunnel type high temperature furnace (15) is raised to 300 ℃ and kept. The rotating speed of the driving mechanism (17) is adjusted to make the transmission speed of the conveyor belt (16) be 0.2 mm/s. The positive pole of the first direct current power supply (121) and the first positive electrode slide rail (181) are connected by a lead (21), the positive pole of the second direct current power supply (122) and the second positive electrode slide rail (182) are connected, and the positive pole of the third direct current power supply (123) and the third positive electrode slide rail (183) are connected by a lead (21); the cathodes of the first direct current power supply (121), the second positive electrode slide rail (182) and the third positive electrode slide rail (183) are all grounded; the output voltage of the first direct current power supply (121) is adjusted to 300-400 volts, the output voltage of the second direct current power supply (122) is adjusted to 250-300 volts, the output voltage of the second direct current power supply (123) is adjusted to 200-250 volts, the molten salt (8) without doping ions is injected into the crucible (3), the negative electrode (10) is inserted into the crucible (3), and the negative electrode is grounded through the electrode lead (11);
(B) bonding a glass substrate (4) to one end of a quartz tube (13) by using a high-temperature bonding agent (14) to ensure tight joint, and preserving heat at 200 ℃ for 1 hour to solidify the high-temperature bonding agent (14);
(C) putting a glass substrate (4) and a bottom closed cavity of a quartz tube (13) into a quartz basket (19), suspending the quartz basket (19) on a conveyor belt (16) at the inner outlet end (left end) of a tunnel type high-temperature furnace (15), and immersing the glass substrate (4) into a fused salt (8) which does not contain doped ions and is in a crucible (3);
(D) injecting fused salt (8) without doping ions into the closed cavities at the bottoms of the glass substrate (4) and the quartz tube (13);
(E) inserting a positive electrode (9) into the bottom closed cavities of the glass substrate (4) and the quartz tube (13), fixing the relative position between the positive electrode (9) and the bottom closed cavities, and connecting the positive electrode (9) to a positive electrode slide rod formed by sequentially connecting a first positive electrode slide rail (181), a second positive electrode slide rail (182), a third positive electrode slide rail (183) and an insulating slide rail joint (22) through an electrode lead (11);
(F) performing the same operation on a new glass substrate (4) on a conveyor belt (16) at the outlet end (left end) of the tunnel type high-temperature furnace (15) every 20min according to the sequence of (B) - (C) - (D) - (E);
(G) after the crucible (3) which is placed for the first time and is internally provided with the glass substrate (4) is conveyed to the outlet end (right end) of the tunnel type high temperature furnace (15), the glass substrate (4) is taken out and cleaned at intervals of 20 min.
The foregoing detailed description is intended to illustrate and not limit the invention, which is intended to be within the spirit and scope of the appended claims, and any changes and modifications that fall within the true spirit and scope of the invention are intended to be covered by the following claims.
Claims (5)
1. A method for continuously manufacturing a buried optical waveguide by voltage-segmented electric field-assisted ion migration is characterized in that the buried optical waveguide is continuously manufactured by carrying out electric field-assisted ion migration on a glass substrate (4) subjected to ion exchange by adopting a voltage-segmented electric field-assisted ion migration technology, and the glass substrate (4) subjected to primary ion exchange is subjected to electric field-assisted ion migration in a tunnel type high-temperature furnace (15) by adopting a continuous manufacturing mode. The method is characterized in that: a positive electrode (9) in fused salt (8) which is formed by a quartz tube and does not contain doped ions in a bottom closed cavity is suspended on a positive electrode slide rod which is formed by sequentially connecting a first positive electrode slide rail (181), a second positive electrode slide rail (182), a third positive electrode slide rail (183) and an insulating slide rail joint (22) through an electrode lead (11); the first positive electrode slide rail (181) is connected with the positive electrode of the first direct current power supply (121) through a lead (21), the second positive electrode slide rail (182) is connected with the positive electrode of the second direct current power supply (122) through a lead (21), and the third positive electrode slide rail (183) is connected with the positive electrode of the third direct current power supply (123) through a lead (21); during the process that the quartz flower basket (19), the glass substrate (4) therein, the quartz tube (13), the positive electrode (9), the electrode lead wire (11), the fused salt (8) without doping ions are conveyed from the inlet end to the outlet end of the tunnel type high-temperature furnace (15), the electrode cathode wire connected with the positive electrode (9) slides on the positive electrode slide rod and keeps good contact.
2. The method for continuously manufacturing the buried optical waveguide by the voltage-segmented electric-field-assisted ion migration according to claim 1, wherein the buried optical waveguide is continuously manufactured by performing the electric-field-assisted ion migration on the glass substrate (4) after ion exchange by using the voltage-segmented electric-field-assisted ion migration technology, and the method is characterized in that: the glass substrate (4) is made of silicate glass, borosilicate glass, phosphate glass or borate glass.
3. The method for continuously manufacturing the buried optical waveguide by the voltage-segmented electric-field-assisted ion migration according to claim 1, wherein the buried optical waveguide is continuously manufactured by performing the electric-field-assisted ion migration on the glass substrate (4) after ion exchange by using the voltage-segmented electric-field-assisted ion migration technology, and the method is characterized in that: the positive electrode (9) and the negative electrode (10) are gold electrodes, platinum electrodes or graphite electrodes.
4. The method for continuously manufacturing the buried optical waveguide by the voltage-segmented electric-field-assisted ion migration according to claim 1, wherein the buried optical waveguide is continuously manufactured by performing the electric-field-assisted ion migration on the glass substrate (4) after ion exchange by using the voltage-segmented electric-field-assisted ion migration technology, and the method is characterized in that: the first direct current power supply (121), the second direct current power supply (122) and the third direct current power supply (123) are all regulated power supply with regulated voltage values output externally.
5. The method for continuously manufacturing the buried optical waveguide by the voltage-segmented electric-field-assisted ion migration according to claim 1, wherein the buried optical waveguide is continuously manufactured by performing the electric-field-assisted ion migration on the glass substrate (4) after ion exchange by using the voltage-segmented electric-field-assisted ion migration technology, and the method is characterized in that: the first positive electrode slide rail (181), the second positive electrode slide rail (182) and the third positive electrode slide rail (183) are all made of conductive materials; the insulating sliding rail joint (22) is made of high-temperature-resistant insulating materials; the insulating slide rail joint (22) ensures the insulation between the first positive electrode slide rail (181) and the second positive electrode slide rail (182) and the insulation between the second positive electrode slide rail (182) and the third positive electrode slide rail (183).
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| CN202010083821.1ACN111239894B (en) | 2020-02-07 | 2020-02-07 | Method for continuously manufacturing buried optical waveguide by using voltage-segmented electric field-assisted ion migration |
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