CN111207879A - A silicon-sapphire single-core differential pressure sensor - Google Patents
A silicon-sapphire single-core differential pressure sensorDownload PDFInfo
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- CN111207879A CN111207879ACN202010041840.8ACN202010041840ACN111207879ACN 111207879 ACN111207879 ACN 111207879ACN 202010041840 ACN202010041840 ACN 202010041840ACN 111207879 ACN111207879 ACN 111207879A
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- pressure
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- plunger head
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L13/00—Devices or apparatus for measuring differences of two or more fluid pressure values
- G01L13/02—Devices or apparatus for measuring differences of two or more fluid pressure values using elastically-deformable members or pistons as sensing elements
- G01L13/025—Devices or apparatus for measuring differences of two or more fluid pressure values using elastically-deformable members or pistons as sensing elements using diaphragms
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L13/00—Devices or apparatus for measuring differences of two or more fluid pressure values
- G01L13/06—Devices or apparatus for measuring differences of two or more fluid pressure values using electric or magnetic pressure-sensitive elements
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/04—Means for compensating for effects of changes of temperature, i.e. other than electric compensation
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- Measuring Fluid Pressure (AREA)
Abstract
Description
Technical Field
The invention relates to a silicon-sapphire single-core pressure difference sensor, and belongs to the technical field of sensor manufacturing.
Background
The silicon-sapphire sensor is widely applied to the fields of aviation, aerospace, petroleum, chemical engineering and the like due to high temperature resistance, corrosion resistance, irradiation resistance and high reliability, can be used for pressure detection of an engine, can also be used for pressure detection of various high-temperature heat-resistant cavities and surfaces, and is a key basic component in a pressure monitoring and control system of high-end equipment.
At present, common silicon-sapphire differential pressure sensors are double-core integrated products, are large in size and poor in symmetry, and need to perform difference taking operation through a differential operational amplifier circuit, so that the cost is increased, the size is increased, and the reliability and the stability are greatly reduced.
The single-core silicon-sapphire differential pressure core body in the prior art is formed by sintering a chip and a metal diaphragm, wherein the diaphragm side is a positive pressure end, the surface of the chip is a negative pressure end, and a chip surface resistor strip is directly contacted with a measured medium, so that the single-core silicon-sapphire differential pressure core body can only be used for differential pressure measurement of inert gases such as nitrogen and the like as the measured medium. And the lead on the surface of the chip is in direct contact with the medium, so that the chip is easy to break and low in reliability.
Common single-core pressure difference sensors are waist-drum oil-filled cores made of silicon chips, and due to the influence of material and structural factors, the sensors are generally not high in temperature resistance (the use temperature is-40-120 ℃) and low in natural frequency (generally 2-3 kHz).
Disclosure of Invention
The invention aims to solve the problems that the existing differential pressure sensor is not high in temperature resistance and low in natural frequency, and provides a silicon-sapphire single-core pressure difference sensor.
The invention relates to a silicon-sapphire single-core body pressure difference sensor which comprises a core body and a plunger head pressure guide cavity structure;
the core body comprises a sensitive chip, a pressure sensing diaphragm, an upper pressure-bearing diaphragm, an upper support column, a transfer ring assembly, a lower support column and a lower pressure-bearing diaphragm;
the upper pressure-bearing diaphragm is arranged on the outer side of the upper support column, the lower pressure-bearing diaphragm is arranged on the outer side of the lower support column, the upper pressure-bearing diaphragm and the lower pressure-bearing diaphragm form a cylinder with a cavity inside through the connection between the upper support column and the lower support column, the sensitive chip, the pressure-sensing diaphragm and the adapter ring assembly are arranged in the cavity of the cylinder, the sensitive chip and the pressure-sensing diaphragm are sintered into a whole, the electrode of the sensitive chip is connected with the adapter ring assembly through a conductive metal wire, and the adapter ring assembly leads out an electric signal through a wire;
the plunger head pressure guide cavity structure comprises an upper cover, a connecting pipe, a plunger head interface and a lower sleeve;
the upper cover, the connecting pipe, the plunger head interface and the lower sleeve are sequentially connected into a whole from top to bottom, a sealed cavity is formed inside the upper cover, the core body is installed in the sealed cavity, the sealed cavity on the inner side of the upper cover and the connecting pipe is a negative pressure cavity, and the sealed cavity on the inner side of the connecting pipe, the plunger head interface and the lower sleeve is a positive pressure cavity;
the upper pressure-bearing diaphragm and the lower pressure-bearing diaphragm respectively receive medium pressure of the positive pressure cavity and medium pressure of the negative pressure cavity, pressure signals are transmitted to the pressure-sensing diaphragm through a supporting structure formed by connecting the upper supporting column and the lower supporting column, the pressure-sensing diaphragm generates deformation according to a pressure difference signal formed by the two pressure signals, the deformation causes the change of the resistance value of the sensitive chip, and the change of the resistance value is used as an output measured value.
Preferably, the sensitive chip and the pressure sensing film are sintered into a whole through silver-copper solder.
Preferably, the conductive metal wire comprises a gold wire or an aluminum wire.
Preferably, four fan-shaped grooves are symmetrically formed in the pressure sensing membrane, and a supporting structure formed by connecting the upper supporting column and the lower supporting column can penetrate through the fan-shaped grooves and can freely move in the fan-shaped grooves.
Preferably, the top end of the upper support column is provided with a thin column, the thin column is inserted into the upper pressure-bearing diaphragm, and the upper support column and the upper pressure-bearing diaphragm are welded through the thin column; the height of the thin column is 0.5mm greater than the thickness of the upper pressure-bearing membrane.
The invention has the advantages that: the invention provides a differential pressure sensor with high temperature resistance, good symmetry and high natural frequency, which has the advantages that:
1. the sensor can be used in a high-temperature environment and can stably work at the temperature of-60-280 ℃.
2. The sensor has higher natural frequency characteristic, the natural frequency can reach more than 20kHz, and the natural frequency is improved by one order of magnitude compared with an oil-filled core.
3. The single core body is adopted to directly sense the symmetrical pressure, a complex differential amplification circuit is not needed to carry out pressure subtraction operation, and the zero static pressure influence, the full-scale static pressure influence and the bidirectional static pressure influence are all ensured to be within the range of +/-0.5%.
4. The sensor has high precision, and the nonlinearity, the repeatability, the hysteresis and the accuracy can be controlled within 0.2 percent.
Drawings
FIG. 1 is a schematic diagram of the sintering of the sensitive chip according to the present invention;
FIG. 2 is a schematic structural view of a core of the present invention, wherein (a) is a sectional view and (b) is a three-dimensional structural view;
FIG. 3 is a schematic structural diagram of a plunger head pressure-leading chamber structure, wherein (a) is a sectional view and (b) is a three-dimensional structural diagram;
FIG. 4 is a reference diagram of a constant current source compensation resistor network in which (a) the zero point is adjusted when the zero point output is negative for compensation and (b) the zero point is adjusted when the zero point output is positive for compensation;
FIG. 5 is a schematic view of a fan-shaped groove structure on a pressure sensing diaphragm;
FIG. 6 is a schematic diagram of a weld stress groove configuration.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that the embodiments and features of the embodiments may be combined with each other without conflict.
The invention is further described with reference to the following drawings and specific examples, which are not intended to be limiting.
The first embodiment is as follows: the present embodiment is described below with reference to fig. 1 to 3, and the present embodiment describes a silicon-sapphire single core body pressure difference sensor, which includes a core body and a plunger head pressure guide cavity structure;
the core body comprises asensitive chip 101, apressure sensing film 103, an upper pressure-bearingfilm 201, anupper support column 203, aswitching ring assembly 204, alower support column 206 and a lower pressure-bearingfilm 207;
the upper pressure-bearingdiaphragm 201 is arranged on the outer side of theupper support column 203, the lower pressure-bearingdiaphragm 207 is arranged on the outer side of thelower support column 206, the upper pressure-bearingdiaphragm 201 and the lower pressure-bearingdiaphragm 207 form a cylinder with a cavity inside through the connection between theupper support column 203 and thelower support column 206, thesensing chip 101, the pressure-sensing diaphragm 103 and theadapter ring assembly 204 are arranged in the cavity of the cylinder, thesensing chip 101 and the pressure-sensing diaphragm 103 are sintered into a whole, the electrode of thesensing chip 101 is connected with theadapter ring assembly 204 through aconductive metal wire 205, and theadapter ring assembly 204 leads out an electric signal through alead 202;
the plunger head pressure-leading cavity structure comprises anupper cover 301, a connectingpipe 302, aplunger head interface 303 and alower sleeve 304;
theupper cover 301, the connectingpipe 302, theplunger head interface 303 and thelower sleeve 304 are sequentially connected into a whole from top to bottom, a sealed cavity is formed inside theupper cover 301, the core body is installed in the sealed cavity, the sealed cavity on the inner side of theupper cover 301 and the connectingpipe 302 is a negative pressure cavity, and the sealed cavity on the inner side of the connectingpipe 302, theplunger head interface 303 and thelower sleeve 304 is a positive pressure cavity;
the upper pressure-bearingdiaphragm 201 and the lower pressure-bearingdiaphragm 207 receive medium pressures of a positive pressure cavity and a negative pressure cavity respectively, pressure signals are transmitted to the pressure-sensing diaphragm 103 through a supporting structure formed by connecting the upper supportingcolumn 203 and the lower supportingcolumn 206, the pressure-sensingdiaphragm 103 generates deformation according to a pressure difference signal formed by the two pressure signals, the deformation causes the change of the resistance of thesensitive chip 101, and the change of the resistance is used as an output measured value.
In this embodiment, theupper cover 301, the connectingpipe 302, theplunger head interface 303, and thelower sleeve 304 are connected to form an integral structure made of all titanium alloy. Theupper cover 301, the connectingtube 302, theplunger head interface 303 and thelower sleeve 304 together form two sealed chambers leading to the top and sides of the plunger head.
In this embodiment, thepressure sensing diaphragm 103, thelower support column 206, and the lower pressure-bearingdiaphragm 207 are connected by welding.
In the embodiment, the core body is respectively welded with the connectingpipe 302 and thelower sleeve 304, the lower end of thelower sleeve 304 is welded with theplunger head interface 303, and theupper cover 301 is respectively welded with the connectingpipe 302 and the lower edge of thelower sleeve 304; the core body and thelower sleeve 304 form a positive pressure cavity, the pressure is sensed by the lower pressure-bearingdiaphragm 207, and the inherent frequency of the positive pressure end of the sensor can reach more than 6 kHz; theupper cover 301, the connectingpipe 302, theplunger head interface 303, thelower sleeve 304 and the upper pressure-bearingdiaphragm 201 form a negative pressure cavity together.
Further, thesensitive chip 101 and thepressure sensing film 103 are sintered into a whole by silver-copper solder 102.
In this embodiment, the sintering is performed by vacuum sintering to prevent the titanium alloy materials of thesensor chip 101 and thepressure sensing diaphragm 103 from being oxidized at high temperature.
Still further, theconductive wire 205 includes a gold wire or an aluminum wire.
In this embodiment, after thepressure sensing diaphragm 103 and theadapter ring assembly 204 are fixed by electric welding, a gold wire or an aluminum wire is bonded to the electrode of thesensor chip 101 and the electrode of theadapter ring assembly 204 by using a wire bonding technique to form an electrical connection,
still further, four fan-shaped grooves are symmetrically formed in thepressure sensing diaphragm 103, and a support structure formed by connecting theupper support column 203 and thelower support column 206 can penetrate through the fan-shaped grooves and can freely move in the fan-shaped grooves.
FIG. 5 is a schematic view of the structure of the fan-shaped grooves on thepressure sensing diaphragm 103
Further, a thin column is arranged at the top end of theupper support column 203, the thin column is inserted into the upper pressure-bearingdiaphragm 201, and theupper support column 203 and the upper pressure-bearingdiaphragm 201 are welded through the thin column; the height of the thin column is 0.5mm greater than the thickness of the upper pressure-bearingmembrane 201.
In this embodiment, thewire 202 is welded to the lead post of theadapter ring assembly 204 by spot welding, after theupper support column 203 and thelower support column 206 are fixed by spot welding, the upper pressure-bearingdiaphragm 201 is inserted into the thin post at the upper end of theupper support column 203, and theupper support column 203, the upper pressure-bearingdiaphragm 201 and the pressure-sensing diaphragm 103 are welded together by argon arc welding to ensure the air tightness.
In the invention, the weld junctions between thepressure sensing diaphragm 103 and the upper pressure-bearingdiaphragm 201 and the lower pressure-bearingdiaphragm 207 are closer to the chip, and stress relief grooves are designed on two sides of the weld junctions in order to prevent welding stress from influencing thesensitive chip 101; the craters between the lower pressure-bearingdiaphragm 207 and thelower sleeve 304, thelower support columns 206 and the thin columns at the lower end of the pressure-sensingdiaphragm 103 are close to the pressure-sensing film of the lower pressure-bearingdiaphragm 207, and the stress-relieving structural design is performed on the craters in order to prevent the diaphragm from deforming due to welding stress. Fig. 6 is a schematic structural diagram of a weld stress groove.
In the invention, the surface of thesensitive chip 101 is not required to be provided with an aluminum electrode or other metal electrodes before being sintered with thepressure sensing film 103, because the higher sintering temperature can cause the silicon on the surface of the chip to generate alloy reaction with the aluminum electrode; and after sintering, manufacturing the electrode again in a device form.
In the invention, theadapter ring component 204 is made of the titanium alloy adapter ring and the ceramic ring by sintering glass powder, and the surface of the titanium alloy needs to be oxidized before sintering, so that a better sintering effect can be achieved.
In the invention, the sensor is installed by adopting thread fastening and double-O-shaped ring sealing, a high-pressure measured medium is accessed from a positive pressure end pressure leading port on the bottom end surface, a low-pressure measured medium is accessed from a negative pressure end pressure leading port on the side surface, and the positive pressure cavity and the negative pressure cavity are fully isolated from the chip in the core body, so that the chip and the lead are not corroded and impacted by the medium, and the reliability is improved.
In the invention, by using a proper compensation resistor network, as shown in fig. 4, the compensation of the thermal zero drift and the thermal sensitivity drift of the sensor and the debugging of the zero output and the full-scale output can be realized when the constant current source supplies power; FIG. 4 is a reference diagram of a constant current source compensation resistor network in which (a) the zero point is adjusted when the zero point output is negative for compensation, and R1 < R3 when the core is at a positive temperature drift coefficient; (b) when the core body is provided with a positive temperature drift coefficient, R1 is larger than R3. R1, R2 and R3 are thermal zero compensation resistors and are obtained by testing three-temperature zero output of the core and calculating bridge arm resistance; r4 is a thermal sensitivity compensation resistor, and is obtained by testing the full-scale output of three temperature points of the core body and calculating the bridge voltage; r2 and R5 are respectively zero setting resistance and amplitude modulation resistance, and can be obtained by formula calculation or directly using a resistance box for adjustment.
In the invention, an all-titanium alloy structure is adopted, the titanium alloy has the corrosion resistance, and the chip is isolated from the tested medium, so that the tested medium can select most of gas or liquid media, such as water, oil, alcohol, air, nitrogen and the like, which have serious corrosion influence on the titanium alloy.
Although the invention herein has been described with reference to particular embodiments, it is to be understood that these embodiments are merely illustrative of the principles and applications of the present invention. It is therefore to be understood that numerous modifications may be made to the illustrative embodiments and that other arrangements may be devised without departing from the spirit and scope of the present invention as defined by the appended claims. It should be understood that features described in different dependent claims and herein may be combined in ways different from those described in the original claims. It is also to be understood that features described in connection with individual embodiments may be used in other described embodiments.
Claims (5)
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010041840.8ACN111207879B (en) | 2020-01-15 | 2020-01-15 | A silicon-sapphire single-core differential pressure sensor |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010041840.8ACN111207879B (en) | 2020-01-15 | 2020-01-15 | A silicon-sapphire single-core differential pressure sensor |
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| CN111207879Atrue CN111207879A (en) | 2020-05-29 |
| CN111207879B CN111207879B (en) | 2021-11-02 |
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Cited By (3)
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| CN112798172A (en)* | 2021-01-27 | 2021-05-14 | 慧石（上海）测控科技有限公司 | a multifunctional sensor |
| CN115028141A (en)* | 2022-08-11 | 2022-09-09 | 西北电子装备技术研究所(中国电子科技集团公司第二研究所) | Sapphire wafer direct bonding method of sapphire pressure sensitive structure |
| CN116296042A (en)* | 2022-12-14 | 2023-06-23 | 中国电子科技集团公司第四十九研究所 | Silicon piezoresistance type single-core differential pressure sensor |
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| CN111207879B (en) | 2021-11-02 |
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