CN111165903A - Heating element and preparation method thereof - Google Patents

Abstract

Translated fromChinese

本发明公开了一种发热元件，其包括相互连接的基板和底板，基板上设置有至少两个通孔，基板的至少部分外表面和通孔的内壁上设置有镀膜层，基板上表面的镀膜层上设置有电极，底板上设置有凹槽，凹槽的内壁与基板共同围合形成液体通道，液体通道与通孔流体连通。本发明提供的发热元件，在基板内部设置至少两个通孔，利用通孔吸收和存储烟液，烟液均匀分散在各个通孔内，同时在基板表面的镀膜层上设置电极，电极与镀膜层形成导电通路，镀膜层的电阻受温度影响波动较小，使得镀膜层通电加热通孔内的烟液时雾化产生的烟雾量稳定，同时烟液受热均匀，避免发热元件局部干烧。本发明还提供了一种发热元件的制备方法。

The invention discloses a heating element, which comprises a base plate and a base plate which are connected to each other, at least two through holes are arranged on the base plate, at least part of the outer surface of the base plate and the inner wall of the through holes are provided with a coating layer, and the coating layer on the upper surface of the base plate is provided with a coating layer. Electrodes are arranged on the layer, and grooves are arranged on the bottom plate. The inner wall of the groove and the base plate together form a liquid channel, and the liquid channel is in fluid communication with the through hole. The heating element provided by the present invention is provided with at least two through holes inside the substrate, the through holes are used to absorb and store the smoke liquid, the smoke liquid is evenly dispersed in each through hole, and electrodes are arranged on the coating layer on the surface of the substrate, and the electrodes are connected with the coating film. The layer forms a conductive path, and the resistance of the coating layer is less affected by temperature fluctuations, so that the amount of smoke generated by atomization when the coating layer is energized to heat the smoke liquid in the through hole is stable, and the smoke liquid is heated evenly to avoid local dry burning of the heating element. The invention also provides a preparation method of the heating element.

Description

Heating element and preparation method thereof

Technical Field

The invention relates to the technical field of simulated smoking, in particular to a heating element for an aerosol generating device and a preparation method thereof.

Background

The liquid atomization device such as an electronic cigarette or a humidifier is provided with a heating element, the heating element in the prior art is generally composed of a metal wire and oil guide cotton, and the liquid in the oil guide cotton is heated by utilizing heat generated after the metal wire is electrified, so that the aim of atomizing the liquid is fulfilled. However, the heating element with such a structure is easily affected by factors such as the configuration of the metal wire and the non-uniformity of the liquid stored in each part of the oil guide cotton, and a series of problems such as non-uniform heating of the liquid, small amount of liquid atomization, local dry burning of the heating element, and thermal carbonization of the oil guide cotton can be encountered. Therefore, there is a need to develop a heating element with uniform liquid heating and low dry burning tendency, and a preparation method thereof.

Disclosure of Invention

Therefore, it is necessary to provide a heating element with uniform heating of liquid and less dry burning possibility and a preparation method thereof.

The technical scheme adopted for solving the technical problems is as follows: a heating element comprises a substrate and a bottom plate which are connected with each other, wherein at least two through holes are formed in the substrate, coating layers are arranged on at least part of the outer surface of the substrate and the inner walls of the through holes, electrodes are arranged on the coating layers on the upper surface of the substrate, grooves are formed in the bottom plate, the inner walls of the grooves and the substrate jointly enclose to form liquid channels, and the liquid channels are communicated with the through holes in a fluid mode.

Furthermore, a coating layer is arranged on the lower surface of the substrate between at least part of the adjacent through holes and/or a coating layer is arranged on the upper surface of the substrate between at least part of the adjacent through holes.

A preparation method of the heating element comprises the following steps:

s1: preparing a substrate and a bottom plate, etching at least two through holes on the substrate, and etching grooves on the bottom plate;

s2: coating a film coating layer on the inner wall of each through hole and at least part of the outer surface of the substrate by using a film coating process;

s3: arranging an electrode on the coating layer on the surface of the substrate;

s4: and bonding the substrate prepared in the step S3 and the bottom plate prepared in the step S1 by using a bonding process, wherein the substrate and the inner wall of the groove jointly enclose to form a liquid channel, and the liquid channel is communicated with the through hole in a fluid mode to obtain the heating element.

Furthermore, a passivation protection layer is arranged between the upper surface of the substrate and the coating layer, two blank areas are arranged on the passivation protection layer, the two blank areas are respectively in one-to-one correspondence with the two electrodes, each electrode is arranged in the corresponding blank area, and the electrodes are made of any one or more of aluminum, platinum, titanium, tungsten or gold. .

Furthermore, an insulating layer and a seed layer are sequentially arranged between the inner wall of the through hole and the coating layer, an insulating layer and a seed layer are sequentially arranged between the outer surface of the substrate and the coating layer, and the insulating layer is made of any one or more chemically stable electric insulating materials of silicon oxide, silicon carbide or silicon nitride.

Further, the size of the through hole is 1-10000 μm.

Further, the size of the through hole is 30-200 μm.

Further, the number of the through holes is 10-10000.

Furthermore, the thickness of the coating layer is 1-100 μm.

Furthermore, the thickness of the passivation protective layer is 0.2-10 μm.

Further, the thickness of the insulating layer is 0.2-10 μm.

Further, the coating layer is made of one or more materials of copper, nickel, gold, copper oxide or nickel oxide.

Further, the substrate is made of any one of glass and silicon, and the bottom plate is made of any one of silicon, glass and a high polymer material.

Further, the polymer material is any one of PDMS (polydimethylsiloxane) or PMMA (Polymethyl methacrylate organic glass).

Further, the Silicon is any one of a crystalline Silicon wafer, a low-resistance crystalline Silicon wafer containing boron or phosphorus ions, and a Silicon-On-Insulator (Silicon-On-Insulator).

Further, the passivation protection layer is made of any one or two materials of silicon nitride or silicon oxide.

Further, the electrode is made of any one or more of aluminum, platinum, titanium, tungsten or gold.

Further, the bonding process is any one of anodic bonding, gold silicon bonding, metal bonding, silicon bonding, silicon-PDMS bonding or silicon-PMMA bonding.

The invention has the beneficial effects that: the heating element provided by the invention is characterized in that at least two through holes are arranged in the substrate, smoke liquid is absorbed and stored by the through holes and is uniformly dispersed in each through hole, coating layers are arranged in the through holes and on the outer surface of the substrate, electrodes are arranged on the coating layers on the upper surface of the substrate, the electrodes and the coating layers form a conductive path, and the resistance of the coating layers is less influenced by temperature, so that the smoke generated by atomization when the coating layers are electrified to heat the smoke liquid in the through holes is stable, meanwhile, the smoke liquid is uniformly heated, the problem of nonuniform heating of the smoke liquid is solved, and the phenomenon that harmful gas is generated due to partial easy dry burning of the heating element is solved. And because the width on coating film layer is adjusted conveniently for the clearance between two adjacent through-holes can reduce, like this, the quantity of through-hole can increase, thereby improved the efficiency that heating element stored the tobacco juice, the coating film layer of base plate lower surface can also directly preheat the tobacco juice in the liquid passage simultaneously, improves atomization efficiency.

The heating element is convenient to operate and simple in process because the electrodes are arranged on the coating layer on the upper surface of the substrate, and meanwhile, the bottom plate is provided with the groove, and the inner wall of the groove and the bottom of the substrate are enclosed to form the liquid channel communicated with the fluid of the through hole, so that the production operation is convenient.

Drawings

The invention is further illustrated by the following figures and examples.

FIG. 1 is a flow chart of a process for manufacturing a heating element according to the present invention;

FIG. 2 is a schematic view of the structure of the heating element of FIG. 1 during the process of S1;

FIG. 3 is a schematic view of the structure of the heating element of FIG. 1 during the process of S1;

FIG. 4 is a schematic view of the structure of the heating element of FIG. 1 during the process of S2;

FIG. 5 is a schematic view of a structure in which a passivation protective layer is provided on the outside of the heating element prepared at S2;

FIG. 6 is a schematic view of the structure of the heating element of FIG. 1 during the process of S3;

FIG. 7 is a schematic view of the structure of the heating element of FIG. 1 during the process of S4;

FIG. 8 is a schematic structural diagram of a heating element in one embodiment of the present invention;

FIG. 9 is a schematic structural view of a heating element according to still another embodiment of the present invention;

the names and the numbers of the parts in the figure are respectively as follows:

substrate 10 andbottom plate 20 of heating element 100

Passivationprotective layer 12coating layer 13 of throughhole 11

Electrode 14 blank 15substrate 20

Groove 21liquid channel 22

Detailed Description

The present invention will now be described in detail with reference to the accompanying drawings. The drawings are simplified schematic views illustrating only the basic structure of the present invention in a schematic manner, and thus show only the constitution related to the present invention.

As shown in fig. 7, the present invention provides a heating element 100 during the process of S4 in the process flow diagram for manufacturing a heating element shown in fig. 1, the heating element 100 including asubstrate 10 and abase plate 20 connected to each other.

Thesubstrate 10 is provided with two throughholes 11, the two throughholes 11 form a through hole array, the upper surface of thesubstrate 10, which is positioned on two opposite sides of the two throughholes 11, the lower surface of thesubstrate 10, which is positioned between the two throughholes 11, and the inner wall of each throughhole 11 are provided with acoating layer 13, the outer surface of thecoating layer 13 is provided with apassivation protection layer 12, thepassivation protection layer 12, which is positioned on the outer surface of thesubstrate 10, is provided with at least two gaps, each gap forms ablank area 15, in the present embodiment, the number of theblank areas 15 is two, theblank area 15 is arranged on the upper surface of thesubstrate 10, eachblank area 15 is provided with anelectrode 14, theelectrodes 14 are in contact with thecoating layers 13, oneelectrode 14 is a positive electrode, theother electrode 14 is a negative electrode, and in the present; it will be appreciated that in other embodiments not shown, the number ofblank regions 15 may be four, six or more, and correspondingly, the number ofelectrodes 14 may also be four, six or more. It will be appreciated that in other embodiments not shown, the number of throughholes 11 may also be three, four or even more.

In one embodiment, an insulating layer and a seed layer are sequentially arranged between the inner wall of the throughhole 11 and theplated film layer 13, an insulating layer and a seed layer are sequentially arranged between the outer surface of thesubstrate 10 and theplated film layer 13, the insulating layer is arranged to prevent theplated film layer 13 from being electrically conducted with the inner wall of the throughhole 11 and theplated film layer 13 from being electrically conducted with the outer surface of thesubstrate 10, short circuit caused by too small resistance of thesubstrate 10 is avoided, the seed layer is conveniently arranged to be provided with theplated film layer 13, and the material of the seed layer is selected according to the material of theplated film layer 13; in this embodiment, the insulating layer is made of silicon oxide, and it is understood that in other embodiments not shown, the insulating layer may also be made of any one of silicon carbide or silicon nitride.

Thebottom plate 20 is provided with agroove 21, one end of thegroove 21 is communicated with the outside, the inner wall of thegroove 21 and the lower surface of thesubstrate 10 enclose together to form aliquid channel 22, and theliquid channel 22 is communicated with the throughhole 11. In this embodiment, thesubstrate 10 and thebottom plate 20 are separately processed and then connected by a bonding process, so as to facilitate the arrangement of thegroove 21.

When in use, the heating element 100 is arranged in the space filled with the tobacco juice, and the tobacco juice enters theliquid channel 22 through one end of theliquid channel 22 and then enters the throughhole 11; meanwhile, the heating element 100 is connected with an external power supply, specifically, oneelectrode 14 is a positive electrode, theelectrode 14 is connected with the positive electrode of the external power supply, theother electrode 14 is a negative electrode, theelectrode 14 is connected with the negative electrode of the external power supply, at the moment, current passes through theelectrode 14, thecoating layer 13 and theother electrode 14 to form a conductive path, thecoating layer 13 in the throughhole 11 and thecoating layer 13 on the lower surface of thesubstrate 10 are electrified to generate heat, so that smoke liquid in the throughhole 11 and theliquid channel 22 is heated, smoke is generated, and the smoke is emitted to the outside from the throughhole 11.

It will be appreciated that in other embodiments, not shown, thecoating 13 may be provided on at least part of the upper surface between adjacent throughholes 11, as shown in figures 8 and 9, or thecoating 13 may be provided on the outer surface of thesubstrate 10, simply by ensuring that when theelectrode 14 is connected to an external power supply, a current is conducted through theelectrode 14, thecoating 13 and thefurther electrode 14 to form a conductive path.

A method for manufacturing a heating element 100, as shown in fig. 1, specifically includes the following steps:

as shown in fig. 2 and 3, S1: preparing asubstrate 10 and abottom plate 20, etching at least two throughholes 11 on thesubstrate 10, and etching agroove 21 on thebottom plate 20;

as shown in fig. 4, S2: arranging acoating layer 13 on the inner wall of each throughhole 11 and at least part of the outer surface of thesubstrate 10 by using a coating process;

as shown in fig. 6, S3: arranging anelectrode 14 on thecoating layer 13 on the surface of thesubstrate 10;

as shown in fig. 7, S4: and bonding thesubstrate 10 prepared in the step S3 and thebottom plate 20 prepared in the step S1 by using a bonding process, enclosing the lower surface of thesubstrate 10 and the inner wall of thegroove 21 together to form aliquid channel 22, and enabling theliquid channel 22 to be communicated with the throughhole 11 in a fluid mode to obtain the heating element 100.

In one embodiment, as shown in fig. 5, in S2, after theplating layer 13 is disposed on the outer surface of thesubstrate 10, thepassivation layer 12 is disposed on the surface of theplating layer 13, two gaps are disposed on thepassivation layer 12 on the upper surface of thesubstrate 10, each of the gaps forms ablank region 15, and each of theblank regions 15 is disposed with anelectrode 14. It is understood that theblank region 15 can be formed by providing a mask on a local area of theplating layer 13 on the upper surface of thesubstrate 10, and when thepassivation layer 12 is provided on the surface of theplating layer 13, the area covered by the mask is theblank region 15, and the mask is removed when theelectrode 14 is provided. It will be appreciated that in other embodiments not shown, the number ofblank regions 15 may be four, six or more, and correspondingly, the number ofelectrodes 14 may also be four, six or more.

In one embodiment, an insulating layer is further disposed between the inner wall of the throughhole 11 and the platedlayer 13, and an insulating layer is disposed between the outer surface of thesubstrate 10 and the platedlayer 13, and the insulating layer is disposed to prevent electrical conduction between the platedlayer 13 and the inner wall of the throughhole 11 and between the platedlayer 13 and the outer surface of thesubstrate 10, so as to avoid short circuit due to too small resistance of thesubstrate 10.

A seed layer is arranged between the insulating layer and thecoating layer 13, the seed layer is convenient for arranging thecoating layer 13, the material of the seed layer is selected according to the material of thecoating layer 13, in the embodiment, thecoating layer 13 is made of copper, and the seed layer is made of copper.

In this embodiment, the bonding process is a silicon-silicon bonding process, and it is understood that in other embodiments not shown, the bonding process may also be any one of anodic bonding, gold-silicon bonding, metal bonding, silicon-PDMS bonding, or silicon-PMMA bonding. In this embodiment, the throughhole 11 is coated with acoating layer 13 by a plating process, and it is understood that in other embodiments not shown, the coating process may be electroless plating.

In this embodiment, the platedlayer 13 is made of copper, and it is understood that in other embodiments not shown, the platedlayer 13 may also be made of one or more metal materials with conductivity, such as nickel, gold, copper oxide or nickel oxide.

In this embodiment, the material of thesubstrate 10 is a crystalline Silicon wafer, and the material of thebottom plate 20 is glass, it is understood that in other embodiments not shown, the material of thesubstrate 10 may also be any one of Silicon materials such as a low-resistance crystalline Silicon wafer containing boron or phosphorus ions and a Silicon-On-Insulator (Silicon-On-Insulator), or the material of thesubstrate 10 is glass; the material of thebottom plate 20 may also be any one of silicon or a high polymer material, and the high polymer material is any one of PDMS (polydimethylsiloxane) or PMMA (polymethyl methacrylate organic glass); in this embodiment, theelectrode 14 is made of gold, and it is understood that in other embodiments not shown, theelectrode 14 is made of any one or more of conductive metal materials such as aluminum, platinum, titanium, tungsten, copper oxide, and zinc oxide;

in the present embodiment, the number of the throughholes 11 is two, and it is understood that in other embodiments, the number of the throughholes 11 may be one, three, four or more; in the present embodiment, the throughhole 11 is circular, and it is understood that in other embodiments not shown, the throughhole 11 may also be square or triangular, only if the throughhole 11 penetrates through thesubstrate 10; it is understood that the size of the throughhole 11 may be 1 μm to 10000 μm, preferably, the size of the throughhole 11 is 30 μm to 200 μm, and in the present embodiment, the size of the throughhole 11 is 200 μm. It will be appreciated that in other embodiments, not shown, part of the through-hole 11 may be filled with the platedlayer 13.

It can be understood that the thickness of the platedlayer 13 may be 1 to 100 μm, in this embodiment, the thickness of the platedlayer 13 is 2 μm; it can be understood that the thickness of thepassivation layer 12 may be 0.2-10 μm, and in the present embodiment, the thickness of thepassivation protection layer 12 is 0.2 μm; it can be understood that the thickness of the insulating layer may be 0.2 to 10 μm, and in the present embodiment, the thickness of the insulating layer is 0.2 μm; it is understood that the thickness of the seed layer is 1 μm or less, and in this embodiment, the thickness of the seed layer is 1 μm.

In this embodiment, thepassivation layer 12 is made of silicon nitride, and it is understood that in other embodiments not shown, thepassivation layer 12 may also be made of silicon oxide or other suitable materials, and thepassivation layer 12 is provided to prevent theplating layer 13 from being oxidized and corroded.

According to the heating element 100, the plurality of through holes are formed in thesubstrate 10, smoke liquid is absorbed and stored through the throughholes 11, the smoke liquid is arranged in each throughhole 11, the coating layers 13 are arranged in the throughholes 11 and on the outer surface of thesubstrate 10, the twoelectrodes 14 are arranged on the coating layers 13 on the upper surface of thesubstrate 10, theelectrodes 14, the coating layers 13 and theother electrodes 14 form a conductive path, and the resistance of the coating layers 13 is less influenced by temperature, so that the smoke generated by atomization when the coating layers 13 are electrified to heat the smoke liquid in the throughholes 11 is stable in amount, the smoke liquid is uniformly heated, the problem that the smoke liquid is unevenly heated is solved, and the phenomenon that harmful gas is generated due to the fact that the local part of the heating element 100 is easily subjected to dry burning. Thecoating layer 13 on the lower surface of thesubstrate 10 can also directly preheat the smoke liquid in theliquid channel 22, so that the atomization efficiency is improved.

The heating element 100 of the invention is provided with theelectrode 14 on thecoating layer 13 on the upper surface of thesubstrate 10, and has convenient operation and simple process. In one embodiment, thebottom plate 20 is provided with agroove 21, and aliquid channel 22 in fluid communication with the throughhole 11 is enclosed between the inner wall of thegroove 21 and the lower surface of thesubstrate 10, so as to facilitate the production operation.

The invention sets the passivationprotective layer 12 on the surface of thecoating layer 13 to prevent thecoating layer 13 from being oxidized and corroded, sets theelectrodes 14 in the twoblank areas 15 of the passivationprotective layer 12, has convenient operation and simple process, sets thegroove 21 on thebottom plate 20, and forms theliquid channel 22 which is communicated with the fluid of the throughhole 11 by enclosing between the inner wall of thegroove 21 and the lower surface of thesubstrate 10, thereby facilitating the production operation.

According to the preparation method of the heating element 100, the at least two throughholes 11 are formed in thesubstrate 10, the coating layers 13 are arranged in the throughholes 11 through the coating process, finally, thesubstrate 10 and thebottom plate 20 are bonded together through the bonding process, theliquid channel 22 is formed by enclosing the inner wall of thegroove 21 in thebottom plate 20 and the lower surface of thesubstrate 10, external smoke liquid enters the throughholes 11 through theliquid channel 22, the coating layers 13 are electrified to heat the smoke liquid to generate smoke, the process is simple, and the operation is convenient; meanwhile, coating layers 13 are arranged in the throughhole 11 and on the outer surface of thesubstrate 10,electrodes 14 are arranged on the coating layers 13 on the upper surface of thesubstrate 10, theelectrodes 14 and the coating layers 13 form a conductive path, and the resistance of the coating layers 13 is less influenced by temperature, so that the smoke generated by atomization when the coating layers 13 are electrified to heat smoke liquid in the throughhole 11 is stable.

According to the preparation method of the heating element 100 provided by the invention, the width of thecoating layer 13 is convenient to adjust, so that the gap between two adjacent throughholes 11 can be reduced, and the number of the throughholes 11 can be increased, thereby improving the efficiency of the heating element 100 for storing the tobacco juice.

In light of the foregoing description of preferred embodiments in accordance with the invention, it is to be understood that numerous changes and modifications may be made by those skilled in the art without departing from the scope of the invention. The technical scope of the present invention is not limited to the contents of the specification, and must be determined according to the scope of the claims.

Claims (13)

Translated fromChinese

1.一种发热元件，其特征在于：所述发热元件包括相互连接的基板和底板，所述基板上设置有至少两个通孔，所述基板的至少部分外表面以及所述通孔的内壁上设置有镀膜层，所述基板外表面的镀膜层上设置有电极，所述底板上设置有凹槽，所述凹槽的内壁与所述基板共同围合形成液体通道，所述液体通道与所述通孔流体连通。1. A heating element, characterized in that: the heating element comprises a base plate and a base plate that are connected to each other, and the base plate is provided with at least two through holes, at least part of the outer surface of the base plate and the inner wall of the through hole. There is a coating layer on it, electrodes are provided on the coating layer on the outer surface of the substrate, and a groove is provided on the bottom plate, and the inner wall of the groove and the substrate are jointly enclosed to form a liquid channel, and the liquid channel is connected with the substrate. The through holes are in fluid communication.2.如权利要求1所述的发热元件，其特征在于：所述基板位于至少部分相邻所述通孔之间的下表面上设置有镀膜层和/或所述基板位于至少部分相邻所述通孔之间的上表面上设置有镀膜层。2. The heating element according to claim 1, characterized in that: a coating layer is provided on the lower surface of the substrate located between at least part of the adjacent through holes and/or the substrate is located at least partially adjacent to the through hole. A coating layer is provided on the upper surface between the through holes.3.如权利要求1所述的发热元件，其特征在于：所述镀膜层表面设置有钝化保护层，位于所述基板外表面的所述钝化保护层上设置有至少两个空白区域，一个所述空白区域与一个所述电极一一对应，每个所述电极设置在对应的所述空白区域内。3. The heating element according to claim 1, characterized in that: the surface of the coating layer is provided with a passivation protection layer, and at least two blank areas are provided on the passivation protection layer on the outer surface of the substrate, One of the blank areas corresponds to one of the electrodes, and each of the electrodes is disposed in the corresponding blank area.4.如权利要求1所述的发热元件，其特征在于：所述通孔的内壁与所述镀膜层之间依次设置有绝缘层和种子层，所述基板的外表面与所述镀膜层之间依次设置有绝缘层和种子层。4. The heating element according to claim 1, wherein an insulating layer and a seed layer are arranged between the inner wall of the through hole and the coating layer in sequence, and the outer surface of the substrate and the coating layer are arranged between the outer surface of the substrate and the coating layer. An insulating layer and a seed layer are arranged in sequence.5.如权利要求1所述的发热元件，其特征在于：所述镀膜层的厚度为1～100μm。5 . The heating element according to claim 1 , wherein the thickness of the coating layer is 1-100 μm. 6 .6.如权利要求3所述的发热元件，其特征在于：所述钝化保护层的厚度为0.2～10μm。6 . The heating element according to claim 3 , wherein the passivation protection layer has a thickness of 0.2-10 μm. 7 .7.如权利要求4所述的发热元件，其特征在于：所述绝缘层的厚度为0.2～10μm。7 . The heating element according to claim 4 , wherein the insulating layer has a thickness of 0.2-10 μm. 8 .8.如权利要求5所述的发热元件，其特征在于：所述种子层的厚度为1μm以下。8 . The heating element according to claim 5 , wherein the thickness of the seed layer is 1 μm or less. 9 .9.如权利要求1所述的发热元件，其特征在于：所述通孔的尺寸为1μm-10000μm。9 . The heating element according to claim 1 , wherein the size of the through hole is 1 μm-10000 μm. 10 .10.如权利要求1所述的发热元件，其特征在于：所述镀膜层由铜、镍、金、氧化铜或者氧化镍中的一种或几种材料制成。10. The heating element according to claim 1, wherein the coating layer is made of one or more materials selected from copper, nickel, gold, copper oxide or nickel oxide.11.一种如权利要求1-10任一项所述的发热元件的制备方法，其特征在于：包括以下步骤：11. A preparation method of a heating element as claimed in any one of claims 1-10, characterized in that: comprising the following steps:S1：准备基板和底板，在所述基板上刻蚀至少两个通孔，在所述底板上刻蚀凹槽；S1: prepare a substrate and a bottom plate, etch at least two through holes on the substrate, and etch grooves on the bottom plate;S2：利用镀膜工艺在每个所述通孔的内壁和所述基板的至少部分外表面设置镀膜层；S2: using a coating process to provide a coating layer on the inner wall of each of the through holes and at least part of the outer surface of the substrate;S3：在所述基板表面的镀膜层上设置电极；S3: Disposing electrodes on the coating layer on the surface of the substrate;S4：利用键合工艺将S3制得的所述基板与S1制得的所述底板键合，所述基板与所述凹槽的内壁共同围合形成液体通道，所述液体通道与所述通孔流体连通，即得所述发热元件。S4: The substrate obtained in S3 is bonded to the base plate obtained in S1 using a bonding process, the substrate and the inner wall of the groove are jointly enclosed to form a liquid channel, and the liquid channel is connected with the communication channel. The holes are in fluid communication, that is, the heating element is obtained.12.如权利要求11所述的发热元件的制备方法，其特征在于：在所述基板上表面的镀膜层表面设置钝化保护层，所述钝化保护层上设置有两个空白区域，两个所述空白区域分别与两个所述电极一一对应，每个所述电极设置在对应的所述空白区域内，所述电极由铝、铂、钛、钨或金中的任意一种或几种材料制成。12. The method for preparing a heating element according to claim 11, wherein a passivation protection layer is provided on the surface of the coating layer on the upper surface of the substrate, and two blank areas are provided on the passivation protection layer, and two blank areas are provided on the passivation protection layer. Each of the blank areas is in one-to-one correspondence with two of the electrodes, each of the electrodes is disposed in the corresponding blank area, and the electrodes are made of aluminum, platinum, titanium, tungsten, or gold. Made of several materials.13.如权利要求12所述的发热元件的制备方法，其特征在于：所述通孔的内壁与所述镀膜层之间依次设置有绝缘层和种子层，所述基板的外表面与所述镀膜层之间依次设置有绝缘层和种子层，所述绝缘层由氧化硅、碳化硅或氮化硅中的任意一种或几种化学性质稳定的电绝缘材料制成，所述镀膜层由铜、镍、金、氧化铜或者氧化镍中的一种或几种材料制成，所述钝化保护层由氮化硅或氧化硅中的任意一种或两种材料制成。13. The method for preparing a heating element according to claim 12, wherein an insulating layer and a seed layer are sequentially arranged between the inner wall of the through hole and the coating layer, and the outer surface of the substrate is connected to the An insulating layer and a seed layer are sequentially arranged between the coating layers, the insulating layer is made of any one or several chemically stable electrical insulating materials in silicon oxide, silicon carbide or silicon nitride, and the coating layer is made of The passivation protection layer is made of any one or two materials of silicon nitride or silicon oxide.

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