CN111009820A - Laser device and preparation method and application thereof - Google Patents

Abstract

The invention discloses a laser device, and belongs to the technical field of semiconductors. The laser device of the present invention includes: the laser chip is provided with a light emitting area; a coupling grating disposed on the laser chip and located on at least one side of the light exit region; and the emergent grating is arranged in the light emergent area and is used for adjusting the emergent angle of the incident light wave. The invention solves the problem that the scanning light source of the existing laser device is difficult to cover the required field range.

Description

Translated fromChinese

一种激光装置及其制备方法及应用A kind of laser device and its preparation method and application

技术领域technical field

本发明属于半导体技术领域，特别是涉及一种激光装置及其制备方法及应用。The invention belongs to the technical field of semiconductors, and in particular relates to a laser device and a preparation method and application thereof.

背景技术Background technique

在激光雷达（Lidar）和三维传感（3D sensing）的应用场景中，均需通过发射激光束探测目标的位置、速度等特征量。其中激光芯片向目标发射探测信号(激光束)，然后将接收到的从目标反射回来的信号(目标回波)与发射信号进行比较,作适当处理后，就可获得目标的有关信息，如目标距离、方位、高度、速度、姿态、甚至形状等参数，从而对目标物体进行探测、跟踪和识别。在一些使用场景中，希望激光芯片的发射场可以通过扫描的方式覆盖整个视场（FOV）。在现有的技术中，为了实现扫描的目的，可以使用机械旋转器或微机电系统（MEMS）镜，但是机械旋转器通常受到旋转速度的限制，且容易损坏，而微机电系统（MEMS）镜的扫描范围小，难以覆盖所需的视场范围，且可靠性低，所以需要提供一种更好的扫描方式，达到覆盖整个视场（FOV）的目的。In the application scenarios of lidar (Lidar) and 3D sensing (3D sensing), it is necessary to detect the position, speed and other characteristic quantities of the target by emitting a laser beam. The laser chip transmits a detection signal (laser beam) to the target, and then compares the received signal (target echo) reflected from the target with the transmitted signal, and after proper processing, the relevant information of the target can be obtained, such as the target Parameters such as distance, orientation, altitude, speed, attitude, and even shape can be used to detect, track and identify target objects. In some usage scenarios, it is desirable that the emission field of the laser chip can cover the entire field of view (FOV) by scanning. In the prior art, for the purpose of scanning, a mechanical rotator or a microelectromechanical system (MEMS) mirror can be used, but the mechanical rotator is usually limited by the rotational speed and is easily damaged, while the microelectromechanical system (MEMS) mirror The scanning range is small, it is difficult to cover the required field of view, and the reliability is low, so it is necessary to provide a better scanning method to achieve the purpose of covering the entire field of view (FOV).

发明内容SUMMARY OF THE INVENTION

本发明的目的在于提供一种激光装置及其制备方法及应用，解决了现有的激光装置扫描光源难以覆盖所需的视场范围的问题。The purpose of the present invention is to provide a laser device, a preparation method and an application thereof, which solve the problem that the scanning light source of the existing laser device is difficult to cover the required field of view.

为解决上述技术问题，本发明是通过以下技术方案实现的：In order to solve the above-mentioned technical problems, the present invention is achieved through the following technical solutions:

本发明提供了一种激光装置，其包括：The present invention provides a laser device comprising:

激光芯片，其上设有出光区域；A laser chip with a light-emitting area on it;

耦合光栅，其设置在所述激光芯片上，且位于所述出光区域的至少一侧；a coupling grating, which is arranged on the laser chip and is located on at least one side of the light emitting area;

出射光栅，其设置在所述出光区域中，用于调整入射光波的出射角度。The exit grating, which is arranged in the light exit area, is used to adjust the exit angle of the incident light wave.

在本发明的一个实施例中，所述激光芯片具有脊形波导结构。In one embodiment of the present invention, the laser chip has a ridge waveguide structure.

在本发明的一个实施例中，当所述激光芯片具有所述脊形波导结构时，所述出射光栅形成于所述脊形波导结构上。In one embodiment of the present invention, when the laser chip has the ridge waveguide structure, the exit grating is formed on the ridge waveguide structure.

在本发明的一个实施例中，当所述激光芯片具有所述脊形波导结构时，所述出射光栅形成于所述激光芯片内。In an embodiment of the present invention, when the laser chip has the ridge waveguide structure, the exit grating is formed in the laser chip.

在本发明的一个实施例中，所述耦合光栅与所述出射光栅并排设置。In one embodiment of the present invention, the coupling grating and the exit grating are arranged side by side.

在本发明的一个实施例中，所述激光芯片具有台面结构。In one embodiment of the present invention, the laser chip has a mesa structure.

在本发明的一个实施例中，当所述激光芯片具有台面结构时，出射光栅形成于所述台面结构上。In one embodiment of the present invention, when the laser chip has a mesa structure, the exit grating is formed on the mesa structure.

在本发明的一个实施例中，所述出射光栅的间距周期为0.1μm-10μm。In an embodiment of the present invention, the pitch period of the exit grating is 0.1 μm-10 μm.

本发明还提供了一种激光装置的制备方法，其包括：The present invention also provides a method for preparing a laser device, comprising:

制备激光芯片，在所述激光芯片上形成出光区域；preparing a laser chip, and forming a light-emitting area on the laser chip;

在所述出光区域形成出射光栅，用于调整入射光波的出射角度。An exit grating is formed in the light exit area to adjust the exit angle of the incident light wave.

本发明还提供了一种电子设备，其包括：The present invention also provides an electronic device, which includes:

壳体，其上设有一敞口；a shell, which is provided with an opening;

透光屏，其安装在所述壳体的敞口上，与所述壳体形成一容纳腔；a light-transmitting screen, which is installed on the opening of the casing and forms an accommodating cavity with the casing;

多个激光装置，设置在所述容纳腔内且并排放置，每个所述激光装置上设有开关，每个所述激光装置包括：A plurality of laser devices are arranged in the accommodating cavity and placed side by side, each of the laser devices is provided with a switch, and each of the laser devices includes:

激光芯片，其上设有出光区域，所述出光区域面向所述透光屏；a laser chip, which is provided with a light-emitting area, and the light-emitting area faces the light-transmitting screen;

耦合光栅，其设置在所述激光芯片上，且位于所述出光区域的至少一侧；a coupling grating, which is arranged on the laser chip and is located on at least one side of the light emitting area;

出射光栅，其设置在所述出光区域中，用于调整出射光线的出射角度；an exit grating, which is arranged in the light exit area and is used to adjust the exit angle of the exit light;

控制系统，其与所述多个激光装置的开关连接，通过控制每个所述激光装置上的开关相继地打开和关闭使所述多个激光装置的发射场覆盖所需视场。A control system, which is connected to the switches of the plurality of laser devices, enables the emission fields of the plurality of laser devices to cover a desired field of view by controlling the switches on each of the laser devices to be sequentially turned on and off.

光接收装置，其设置在所述容纳腔内，用于接收所述所需视场反馈的光信号。A light receiving device, which is arranged in the accommodating cavity, is used for receiving the light signal fed back by the desired field of view.

在本发明的一个实施例中，每个所述激光装置出光区域产生的发射场为长条形光场。In an embodiment of the present invention, the emission field generated by each of the light-emitting regions of the laser device is an elongated light field.

在本发明的一个实施例中，多个所述长条形光场相互平行且多个所述长条形光场的中心互不重叠。In an embodiment of the present invention, the plurality of elongated light fields are parallel to each other and the centers of the plurality of elongated light fields do not overlap with each other.

在本发明的一个实施例中，所述长条形光场的角度跨度为（0.1-20）度×（10-90）度。In an embodiment of the present invention, the angular span of the elongated light field is (0.1-20) degrees×(10-90) degrees.

在本发明的一个实施例中，多个所述长条形光场叠加形成一长方形平顶远场。In an embodiment of the present invention, a plurality of the elongated light fields are superimposed to form a rectangular flat-top far field.

在本发明的一个实施例中，相邻所述激光装置的发射场的间距为0.1度-20度。In an embodiment of the present invention, the distance between the emission fields of the adjacent laser devices is 0.1 degrees to 20 degrees.

在本发明的一个实施例中，每个所述激光装置的出光区域设有光学元件。In an embodiment of the present invention, an optical element is provided in the light emitting area of each of the laser devices.

本发明的激光装置及其应用的电子设备，可以以扫描的方式完全覆盖整个所需的视场范围，且结构简单，不易损坏。The laser device and the applied electronic equipment of the present invention can completely cover the entire required field of view in a scanning manner, and have a simple structure and are not easily damaged.

当然，实施本发明的任一产品并不一定需要同时达到以上所述的所有优点。Of course, it is not necessary for any product embodying the present invention to achieve all of the above-described advantages simultaneously.

附图说明Description of drawings

为了更清楚地说明本发明实施例的技术方案，下面将对实施例描述所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。In order to illustrate the technical solutions of the embodiments of the present invention more clearly, the following briefly introduces the accompanying drawings used in the description of the embodiments. Obviously, the drawings in the following description are only some embodiments of the present invention. For those of ordinary skill in the art, other drawings can also be obtained from these drawings without any creative effort.

图1为本发明电子设备的结构示意图；1 is a schematic structural diagram of an electronic device of the present invention;

图2为图1中电子设备对入射光波的作用示意图；FIG. 2 is a schematic diagram of the action of the electronic device in FIG. 1 on incident light waves;

图3为图1中入射光波与出射光线的关系图；Fig. 3 is the relation diagram of incident light wave and outgoing light in Fig. 1;

图4为图1中电子设备一工作示意图；Fig. 4 is a working schematic diagram of electronic equipment one in Fig. 1;

图5为图1中电子设备一工作示意图；Fig. 5 is a working schematic diagram of electronic equipment one in Fig. 1;

图6为图1中电子设备一工作示意图；Fig. 6 is a working schematic diagram of electronic equipment one in Fig. 1;

图7为本发明激光装置一实施例的结构侧视图；7 is a structural side view of an embodiment of the laser device of the present invention;

图8为图7中实施例的结构俯视图；FIG. 8 is a top view of the structure of the embodiment in FIG. 7;

图9为本发明激光装置另一实施例的结构侧视图；9 is a structural side view of another embodiment of the laser device of the present invention;

图10为图9中实施例的结构俯视图；Figure 10 is a top view of the structure of the embodiment in Figure 9;

图11为本发明激光装置另一实施例的结构侧视图；11 is a structural side view of another embodiment of the laser device of the present invention;

图12为图11中实施例的结构俯视图；FIG. 12 is a top view of the structure of the embodiment in FIG. 11;

图13为本发明激光装置另一实施例的结构侧视图；13 is a structural side view of another embodiment of the laser device of the present invention;

图14为图13中实施例的结构俯视图；Figure 14 is a top view of the structure of the embodiment in Figure 13;

图15为本发明激光装置另一实施例的结构侧视图；15 is a structural side view of another embodiment of the laser device of the present invention;

图16为图15中实施例的结构俯视图；Figure 16 is a top view of the structure of the embodiment in Figure 15;

图17为本发明激光装置另一实施例的结构侧视图；17 is a structural side view of another embodiment of the laser device of the present invention;

图18为图17中实施例的结构俯视图；FIG. 18 is a top view of the structure of the embodiment in FIG. 17;

图19为本发明激光装置另一实施例的结构侧视图；19 is a structural side view of another embodiment of the laser device of the present invention;

图20为图19中实施例的结构俯视图；Figure 20 is a top view of the structure of the embodiment in Figure 19;

图21为本发明激光装置另一实施例的结构侧视图；21 is a structural side view of another embodiment of the laser device of the present invention;

图22为图21中实施例的结构俯视图；Figure 22 is a top view of the structure of the embodiment in Figure 21;

图23为本发明激光装置的方法流程图。FIG. 23 is a flow chart of the method of the laser device of the present invention.

具体实施方式Detailed ways

下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其它实施例，都属于本发明保护的范围。The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, but not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

请参阅图1、图2及图3所示，本发明提供一种电子设备100，其包括：壳体200、透光屏300、多个激光装置400、控制系统500和光接收装置600。Referring to FIGS. 1 , 2 and 3 , the present invention provides anelectronic device 100 , which includes: acasing 200 , a light-transmittingscreen 300 , a plurality oflaser devices 400 , acontrol system 500 and alight receiving device 600 .

请一并参阅图1至图22所示，壳体200可以采用任意形状，壳体200一侧形成一敞口，壳体200所用材料本发明不做限定。透光屏300安装在壳体200的敞口上，且与壳体200形成一容纳腔，透光屏300可选用玻璃、液晶聚合物、硅酸凝胶、透明亚克力等透过率大于90%的透明材料中的一种。多个激光装置400设置在容纳腔内，每个激光装置400包括：激光芯片410、出射光栅430和耦合光栅450和开关。在激光芯片410上设有出光区域，且出光区域面向透光屏300。出射光栅430设置在可以通过出射光栅430改变激光装置400的出光角度，本实施例中例如可以通过出射光栅430使侧面出光的激光芯片410改变部分入射光波1000的发射角度，使出射光线900与激光芯片410的垂直方向形成一出光角度θ，通过调节出射光栅430的间距周期，可以调节出光角度θ，从而精确地控制发光方向，本实施例中，出射光栅430的间距周期例如为0.1μm-10μm，出光角度θ例如为0度-60度，本实施例中，出射光栅430的间距周期与出光角度θ之间的关系为：Please refer to FIG. 1 to FIG. 22 together. Thecasing 200 can be in any shape, an opening is formed on one side of thecasing 200 , and the material used for thecasing 200 is not limited in the present invention. The light-transmittingscreen 300 is installed on the opening of thecasing 200, and forms an accommodation cavity with thecasing 200. The light-transmittingscreen 300 can be selected from glass, liquid crystal polymer, silicic acid gel, transparent acrylic, etc. with a transmittance greater than 90%. One of the transparent materials. A plurality oflaser devices 400 are arranged in the accommodating cavity, and eachlaser device 400 includes: alaser chip 410 , an exit grating 430 , acoupling grating 450 and a switch. A light emitting area is provided on thelaser chip 410 , and the light emitting area faces the light-transmittingscreen 300 . The exit grating 430 is arranged so that the light exit angle of thelaser device 400 can be changed through the exit grating 430. In this embodiment, for example, the exit grating 430 can be used to make thelaser chip 410 that emits light from the side change the emission angle of part of theincident light wave 1000, so that theexit light 900 and the laser The vertical direction of thechip 410 forms a light emitting angle θ. By adjusting the spacing period of the output grating 430, the light emitting angle θ can be adjusted so as to precisely control the light emitting direction. In this embodiment, the spacing period of the output grating 430 is, for example, 0.1 μm-10 μm , the light exit angle θ is, for example, 0°-60 degrees. In this embodiment, the relationship between the pitch period of the exit grating 430 and the light exit angle θ is:

其中，

为出射光栅430的间距周期；θ为出光角度，即出射光线900相对于垂直方向的倾斜角度；m为自然数；λ为入射光波1000的波长。in,

is the pitch period of the exit grating 430; θ is the light exit angle, that is, the inclination angle of theexit light 900 relative to the vertical direction; m is a natural number; λ is the wavelength of theincident light wave 1000.

请参阅图1至图6所示，本发明的电子设备100还包括控制系统500，控制系统500与多个激光装置400连接，按照预设顺序控制每个激光装置400相继地打开和关闭使激光装置400的发射场700覆盖所需视场800。本发明的电子设备100还包括光接收装置600，光接收装置600用于接收视场800反馈的光信号。本发明的电子设备100中，每个激光装置400出光区域产生的发射场700为长条形光场，且相邻所述长条形光场相互平行且几何中心互不重叠，所述长条形光场的角度跨度在X、Y方向上分别为α和β，α和β例如分别为0.1度-20度和10度-90度，相邻所述激光装置400的发射场700的间距例如为0.1度-20度，多个激光装置400出光区域产生的发射场700叠加后覆盖整个所需视场800（FOV）区域，形成一个强度均匀的平顶长方形远场，视场800区域例如为45度×60度。在一些实施例中，每个激光装置400的出光区域还可以设有光学结构或光学元件，光学结构例如可以为光扩散结构，光学元件例如可以为棱镜、漫射器、折射光学元件或衍射光学元件等其中的一种，所述光学结构或光学元件对出射的激光束起到整形的作用，即改变出射激光束的强度分布为所需的强度分布，同时调整出射激光束的相位分布从而控制出射激光束的传播路径。1 to 6 , theelectronic device 100 of the present invention further includes acontrol system 500, thecontrol system 500 is connected to a plurality oflaser devices 400, and controls eachlaser device 400 to turn on and off successively according to a preset sequence to make the laser Theemission field 700 of thedevice 400 covers the desired field ofview 800 . Theelectronic device 100 of the present invention further includes alight receiving device 600 , and thelight receiving device 600 is configured to receive the light signal fed back by the field ofview 800 . In theelectronic device 100 of the present invention, theemission field 700 generated by the light-emitting area of eachlaser device 400 is a long light field, and the adjacent long light fields are parallel to each other and the geometric centers do not overlap with each other. The angular spans of the shaped light fields are respectively α and β in the X and Y directions, and α and β are, for example, 0.1°-20° and 10°-90°, respectively, and the distance between the emission fields 700 adjacent to thelaser device 400 is, for example, Theemission field 700 generated by the light-emitting areas of themultiple laser devices 400 is superimposed and covers the entire required field of view 800 (FOV) area, forming a flat-top rectangular far field with uniform intensity. For example, the field ofview 800 area is: 45 degrees x 60 degrees. In some embodiments, the light emitting area of eachlaser device 400 may further be provided with an optical structure or optical element, for example, the optical structure may be a light diffusing structure, and the optical element may be, for example, a prism, a diffuser, a refractive optical element or a diffractive optical element One of the components, etc., the optical structure or optical element plays a role in shaping the outgoing laser beam, that is, changing the intensity distribution of the outgoing laser beam to the required intensity distribution, and adjusting the phase distribution of the outgoing laser beam to control the The propagation path of the outgoing laser beam.

请参阅图1至图6所示，实际应用中，通过控制系统500分别单独控制电子设备100中每个激光装置400的开关，按照预设顺序依次相继地打开和关闭具有相邻发射场700的激光装置400，以使得发射场700例如以长条形的形状且垂直于长边的方向扫描整个所需视场800，并通过光接收装置600接收视场800反馈的光信号。当多个激光装置400全部打开时，多个激光装置400所形成的发射场700叠加后形成长方形平顶远场即视场800，所述视场800区域例如为45度×60度。当多个激光装置400按照预先设定的顺序依次打开时，所形成的发射场700可以实现覆盖整个视场800的扫描。如图5所示，多个激光装置400按照预设顺序在一段时间内依次启动，依次发射出预设波长的光谱，依次获得顺序排列的相互平行且集合中芯互不重叠的长条型的发射场700，以实现对视场800区域的扫描过程。本实施例中视场800可以由多条长条型的发射场700覆盖组成，例如视场800可以由8条长条型的发射场700覆盖组成，编号例如为FA、FB、FC、FD、FE、FF、FG、FH，每一个长条型的发射场700由一个对应的激光装置400的出射光线900获得，8条长条型的发射场700即由8个激光装置的出射光线900获得，8个激光装置400并排设置，依次对8个激光装置400进行编号例如为A、B、C、D、E、F、G、H，每个激光装置400的出光角度可以设为不同，在实际使用时，需要依次形成8条发射场700，以实现激光装置400以扫描的方式覆盖整个视场800，在一些实施例中，8条长条型的发射场700可以与相应位置的激光装置400一一对应，例如FA由A获得，FB由B获得，FC由C获得，以此类推，在一些实施例中，8条长条型的发射场700也可以与相应位置的激光装置400不是一一对应，例如FA由B获得，FB由C获得，FC由A获得，只需保证发射场700按照例如由FA至FH既定的顺序依次形成即可，而对该发射场700所对应的激光装置400的具体位置并不需做限定，通过出射光栅430对出射光线900角度的调整，可以使激光装置400在任意序列位置都可以达到打开对应发射场700的目的。在一些实施例中，激光装置400所获得长条型的发射场700的角度跨度在X、Y方向上分别为α和β，α和β例如分别为0.1度-20度和10度-90度，相邻激光装置400所形成的发射场700相互平行，且相邻激光装置400所形成的发射场700的几何中心互不重叠。相邻激光装置400的发射场700的间距例如为0.1度-20度。Referring to FIGS. 1 to 6 , in practical applications, thecontrol system 500 individually controls the switches of eachlaser device 400 in theelectronic device 100 to sequentially turn on and off the laser devices withadjacent emission fields 700 in a preset sequence. Thelaser device 400 makes theemission field 700 scan the entire desired field ofview 800 in the shape of an elongated strip, for example, in a direction perpendicular to the long side, and receives the light signal fed back by the field ofview 800 through thelight receiving device 600 . When themultiple laser devices 400 are all turned on, the emission fields 700 formed by themultiple laser devices 400 are superimposed to form a rectangular flat-top far field, that is, a field ofview 800 . When a plurality oflaser devices 400 are turned on in sequence according to a preset sequence, the formedemission field 700 can realize scanning covering the entire field ofview 800 . As shown in FIG. 5 , a plurality oflaser devices 400 are sequentially activated within a certain period of time according to a preset sequence, and sequentially emit spectra of preset wavelengths, and sequentially obtain a sequence of long strips that are parallel to each other and whose cores do not overlap each other. Thefield 700 is emitted to realize the scanning process of the area of the field ofview 800 . In this embodiment, the field ofview 800 may be covered by a plurality of strip-shapedemission fields 700, for example, the field ofview 800 may be covered by eight strip-shapedemission fields 700, and the numbers are, for example, FA, FB, FC, FD, FE , FF, FG, FH, theemission field 700 of each strip is obtained by theoutgoing light 900 of acorresponding laser device 400, and the eightlong emission fields 700 are obtained by theoutgoing light 900 of the eight laser devices, Eightlaser devices 400 are arranged side by side, and the eightlaser devices 400 are numbered in sequence, for example, A, B, C, D, E, F, G, H. The light-emitting angle of eachlaser device 400 can be set to be different. In use, eightemission fields 700 need to be formed in sequence, so that thelaser device 400 can cover the entire field ofview 800 in a scanning manner. In some embodiments, the eightlong emission fields 700 can be matched with thelaser device 400 at the corresponding position. One-to-one correspondence, for example, FA is obtained by A, FB is obtained by B, FC is obtained by C, and so on. In some embodiments, the 8-stripe emission field 700 may also be different from thelaser device 400 at the corresponding position. One-to-one correspondence, for example, FA is obtained by B, FB is obtained by C, and FC is obtained by A. It is only necessary to ensure that theemission field 700 is formed in sequence from FA to FH, for example, and the laser device corresponding to theemission field 700 The specific position of 400 does not need to be limited. By adjusting the angle of theoutgoing light 900 by theoutgoing grating 430, thelaser device 400 can achieve the purpose of opening thecorresponding emission field 700 at any sequence position. In some embodiments, the angular spans of theelongated emission field 700 obtained by thelaser device 400 are α and β in the X and Y directions, respectively, and α and β are, for example, 0.1°-20° and 10°-90°, respectively. , the emission fields 700 formed byadjacent laser devices 400 are parallel to each other, and the geometric centers of the emission fields 700 formed byadjacent laser devices 400 do not overlap each other. The distance between the emission fields 700 ofadjacent laser devices 400 is, for example, 0.1 degrees to 20 degrees.

请一并参阅图4至图18所示，本发明还提供一种激光装置400，其包括：激光芯片410、出射光栅430和耦合光栅450。Please refer to FIGS. 4 to 18 together. The present invention further provides alaser device 400 , which includes alaser chip 410 , an exit grating 430 and acoupling grating 450 .

请一并参阅图4至图18所示，其中激光芯片410可以为侧面出光的激光装置400，激光芯片410可以包括：N电极411、衬底412、N型半导体层413、有源层414和P型半导体层415和P电极416，其中N电极411形成于衬底412的一侧，N型半导体层413形成于衬底412背离N电极411的一侧，有源层414形成在N型半导体层413背离衬底412的一侧，P型半导体层415形成于有源层414背离N型半导体层413的一侧，P电极416形成于P型半导体层415背离有源层414的一侧，再将有源层414和P型半导体层415的两侧向下刻蚀，获得脊形波导结构417，在脊形波导结构417的P型半导体层415上形成P电极416。所述激光芯片410的衬底412例如可以为砷化镓（GaAs）衬底412、硅衬底412或蓝宝石衬底412中的一种。N型半导体层413和P型半导体层415例如选用材料铝镓砷（AlGaAs）制成。有源层414可以包括多量子阱型有源层414或应变多量子阱型有源层414等，本发明实施例不做限定。本发明实施例中，有源层414可以是组成材料为砷化镓（GaAs）/铝镓砷（AlGaAs）的多量子阱型有源层414，也可以是组成材料为铟镓砷（InxGa1-xAs）/铝镓砷（AlyGa1-yAs）的应变多量子阱型有源层414，本发明实施例不做限定。有源层414所对应的侧面区域可以发射光线，即获得入射光波1000。在一些实施例中，也可以通过在激光芯片410侧面设置高反射膜470来减少侧面出光。激光芯片410中的N电极411所用材料例如可以为Cr/Al/Ti/Au、Cr/Pt/Au、Ni/Au、Ni/Ag/Pt/Au、Ti/Au或Ti/Pt/Au，本发明实施例不做限定。激光芯片410中的P电极416所用材料例如可以为Cr/Al/Ti/Au、Cr/Pt/Au、Ni/Au、Ni/Ag/Pt/Au、Ti/Au或Ti/Pt/Au。激光装置400中还包括耦合光栅450，耦合光栅450位于有源层414的一侧，当电流注入激光装置400后，有源层414内电子——空穴复合，辐射出能量相应的光子，这些光子将受到有源层414一侧耦合光栅450的反射后，从激光芯片410发射出来，实现激光装置400的侧面发光，此时耦合光栅450对光子的反射为布拉格发射，耦合光栅450的栅条间入射光和反射光的方向恰好相反，耦合光栅450能起到波长选择和波长稳定的效果，其原理是耦合光栅450允许的入射波长λ需要满足方程，即d=m×λ/2，其中d为耦合光栅450的周期，m为自然数，在固定了耦合光栅450的周期之后，即锁定了波长λ，由此实现了波长选择和波长稳定的效果，另外也可以通过改变耦合光栅450的周期获得不同波长的激光光谱。耦合光栅450可以形成于激光芯片410的表面，也可以掩埋于激光芯片410的内部，通过耦合光栅450对入射光波1000进行锁模，对特定波长的部分光线进行选择。激光装置400中还包括出射光栅430，出射光栅430可与耦合光栅450并排设置形成于激光芯片410的表面，也可以掩埋于激光芯片410的内部，在本实施例中，出射光栅430形成于激光芯片410有源层414一侧的脊形波导结构417上，且与所述耦合光栅450并排设置，出射光栅430所对应的激光芯片410中的相应区域为出光区域，可以通过出射光栅430改变入射光波1000中的部分光线的出光角度，本实施例中例如可以通过出射光栅430使激光装置400的出射光线900与激光芯片410垂直方向之间形成如图3所示的一倾斜出光角度θ，当耦合光栅450锁定了特定波长的出射光线900，通过调节出射光栅430的间距周期，可以调节出光角度θ，从而使激光装置400中部分入射光波1000由侧面出光变为与激光装置400呈一倾斜角度出光，继而达到精确控制发光方向的目的，本实施例中，出射光栅430的间距周期例如为0.1μm-10μm，出光角度θ例如为0度-60度。具体的，出光区域可以形成于激光装置400水平方向的任意区域，在本实施例中，出光区域可以形成于激光装置400水平方向的两侧区域其中之一，例如呈长条型，此时位于出光区域的出射光栅430可以对应形成于激光装置400水平方向的两侧区域其中之一，更具体的，出射光栅430可以形成于激光芯片410两侧区域的表面，也可以形成于激光芯片410两侧区域的内部，本实施例中，出射光栅430可以形成于P型半导体层上，获得表面出射光栅430，出射光栅430也可以形成掩埋于P型半导体层或N型半导体层内部的掩埋出射光栅430。在其他实施例中，出光区域可以形成于激光装置400水平方向的中部区域，此时位于出光区域的出射光栅430可以形成于激光装置400水平方向的中部区域，更具体的，出射光栅430可以形成于激光芯片410中部区域的表面，也可以形成于激光芯片410中部区域的内部，本实施例中，出射光栅430可以形成于P型半导体层上，获得表面出射光栅430，出射光栅430也可以形成掩埋于P型半导体层或N型半导体层内部的掩埋出射光栅430。Please refer to FIG. 4 to FIG. 18 together. Thelaser chip 410 may be alaser device 400 that emits light from the side. Thelaser chip 410 may include: anN electrode 411 , asubstrate 412 , an N-type semiconductor layer 413 , anactive layer 414 and The P-type semiconductor layer 415 and the P-electrode 416, wherein the N-electrode 411 is formed on one side of thesubstrate 412, the N-type semiconductor layer 413 is formed on the side of thesubstrate 412 away from the N-electrode 411, and theactive layer 414 is formed on the N-type semiconductor Thelayer 413 is formed on the side away from thesubstrate 412, the P-type semiconductor layer 415 is formed on the side of theactive layer 414 away from the N-type semiconductor layer 413, the P-electrode 416 is formed on the side of the P-type semiconductor layer 415 away from theactive layer 414, Then, both sides of theactive layer 414 and the P-type semiconductor layer 415 are etched downward to obtain a ridge-shapedwaveguide structure 417 , and a P-electrode 416 is formed on the P-type semiconductor layer 415 of the ridge-shapedwaveguide structure 417 . Thesubstrate 412 of thelaser chip 410 may be, for example, one of a gallium arsenide (GaAs)substrate 412 , asilicon substrate 412 or asapphire substrate 412 . For example, the N-type semiconductor layer 413 and the P-type semiconductor layer 415 are made of aluminum gallium arsenide (AlGaAs). Theactive layer 414 may include a multiple quantum well typeactive layer 414 or a strained multiple quantum well typeactive layer 414, etc., which is not limited in the embodiment of the present invention. In the embodiment of the present invention, theactive layer 414 may be a multi-quantum well typeactive layer 414 composed of gallium arsenide (GaAs)/aluminum gallium arsenide (AlGaAs), or may be composed of indium gallium arsenide (InxGa1- The strained multi-quantum well typeactive layer 414 of xAs)/aluminum gallium arsenide (AlyGa1-yAs) is not limited in the embodiment of the present invention. The side area corresponding to theactive layer 414 can emit light, that is, theincident light wave 1000 can be obtained. In some embodiments, a high-reflection film 470 may also be provided on the side of thelaser chip 410 to reduce side light emission. The material used for theN electrode 411 in thelaser chip 410 can be, for example, Cr/Al/Ti/Au, Cr/Pt/Au, Ni/Au, Ni/Ag/Pt/Au, Ti/Au or Ti/Pt/Au. The embodiments of the invention are not limited. The material used for theP electrode 416 in thelaser chip 410 may be, for example, Cr/Al/Ti/Au, Cr/Pt/Au, Ni/Au, Ni/Ag/Pt/Au, Ti/Au or Ti/Pt/Au. Thelaser device 400 also includes acoupling grating 450. Thecoupling grating 450 is located on one side of theactive layer 414. When the current is injected into thelaser device 400, the electron-hole recombination in theactive layer 414 emits photons with corresponding energy. After the photons are reflected by the coupling grating 450 on the side of theactive layer 414, they are emitted from thelaser chip 410 to realize side light emission of thelaser device 400. At this time, the reflection of the photons by the coupling grating 450 is Bragg emission, and the grid bars of the coupling grating 450 The directions of the incident light and reflected light are just opposite, and the coupling grating 450 can play the effect of wavelength selection and wavelength stabilization. The principle is that the incident wavelength λ allowed by the coupling grating 450 needs to satisfy the equation, that is, d=m×λ/2, where d is the period of the coupling grating 450, and m is a natural number. After the period of the coupling grating 450 is fixed, the wavelength λ is locked, thereby achieving the effect of wavelength selection and wavelength stability. In addition, the period of the coupling grating 450 can be changed. Obtain laser spectra of different wavelengths. The coupling grating 450 can be formed on the surface of thelaser chip 410 or buried inside thelaser chip 410 , and theincident light wave 1000 is mode-locked by the coupling grating 450 to select part of light with a specific wavelength. Thelaser device 400 further includes anexit grating 430. The exit grating 430 and the coupling grating 450 can be arranged side by side and formed on the surface of thelaser chip 410, or can be buried inside thelaser chip 410. In this embodiment, the exit grating 430 is formed on thelaser chip 410. Theridge waveguide structure 417 on theactive layer 414 side of thechip 410 is arranged side by side with thecoupling grating 450. The corresponding area in thelaser chip 410 corresponding to the exit grating 430 is the light exit area, and the incident light can be changed by the exit grating 430. The exit angle of part of the light in thelight wave 1000, in this embodiment, for example, the exit grating 430 can be used to form an oblique exit angle θ between theexit light 900 of thelaser device 400 and the vertical direction of thelaser chip 410 as shown in FIG. 3 . The coupling grating 450 locks theoutgoing light 900 of a specific wavelength. By adjusting the interval period of theoutgoing grating 430 , the light outgoing angle θ can be adjusted, so that part of theincident light waves 1000 in thelaser device 400 are emitted from the side to form an oblique angle with thelaser device 400 . In this embodiment, the pitch period of the exit grating 430 is, for example, 0.1 μm-10 μm, and the light-emitting angle θ is, for example, 0°-60°. Specifically, the light emitting area can be formed in any area of thelaser device 400 in the horizontal direction. In this embodiment, the light emitting area can be formed on one of the two sides of thelaser device 400 in the horizontal direction, for example, in a strip shape, which is located in the horizontal direction of thelaser device 400. The exit grating 430 in the light exit area may be formed on one of the two sides of thelaser device 400 in the horizontal direction. More specifically, the exit grating 430 may be formed on the surface of the two sides of thelaser chip 410 , or may be formed on both sides of thelaser chip 410 . Inside the side region, in this embodiment, the exit grating 430 can be formed on the P-type semiconductor layer to obtain a surface exit grating 430, and the exit grating 430 can also form a buried exit grating buried inside the P-type semiconductor layer or the N-type semiconductor layer 430. In other embodiments, the light exit area may be formed in the horizontal middle area of thelaser device 400, and the exit grating 430 located in the light exit area may be formed in the horizontal middle area of thelaser device 400. More specifically, the exit grating 430 may be formed On the surface of the central region of thelaser chip 410, it can also be formed inside the central region of thelaser chip 410. In this embodiment, the exit grating 430 can be formed on the P-type semiconductor layer to obtain the surface exit grating 430. The exit grating 430 can also be formed The buried exit grating 430 is buried inside the P-type semiconductor layer or the N-type semiconductor layer.

请一并参阅图19至图22所示，在其他实施例中，激光芯片410还可以包括：N电极411、衬底412、N型半导体层413、有源层414和P型半导体层415和P电极416，其中N电极411形成于衬底412的一侧，N型半导体层413形成于衬底412背离N电极411的一侧，有源层414形成在N型半导体层413背离衬底412的一侧，P型半导体层415形成于有源层414背离N型半导体层413的一侧，沿着有源层414和P型半导体层415向下刻蚀，直至N型半导体层413时停止刻蚀，从而形成台面结构419以及耦合光栅450，再在台面结构419的P型半导体层415上背离有源层414的一侧形成P电极416。台面结构419可以形成于激光芯片410水平方向的任意区域，也可以形成于激光芯片410的水平方向的中部区域。在本实施例中，所述激光芯片410的衬底412例如可以为砷化镓（GaAs）衬底412、硅衬底412或蓝宝石衬底412中的一种。N型半导体层413例如选用材料铝镓砷（AlGaAs）制成。P型半导体层415例如为一组P型掺杂的分布式布拉格反射镜，一组P型掺杂的分布式布拉格反射镜中包括至少两层P型掺杂的分布式布拉格反射镜，每层P型掺杂的分布式布拉格反射镜由金属组分值不同的相同材料构成，例如本实施例中选用材料铝镓砷（AlGaAs）。分布式布拉格反射镜的原理是依靠两种高低折射率相间的材料层构成很多对的周期结构以使分布式布拉格反射镜的反射率达到99.5％以上。有源层414可以包括多量子阱型有源层414或应变多量子阱型有源层414等，本发明实施例不做限定。本发明实施例中，有源层414可以是组成材料为砷化镓（GaAs）/铝镓砷（AlGaAs）的多量子阱型有源层414，也可以是组成材料为铟镓砷（InxGa1-xAs）/铝镓砷（AlyGa1-yAs）的应变多量子阱型有源层414，本发明实施例不做限定。有源层414所对应的侧面区域可以发射光线，即获得入射光波1000。在一些实施例中，也可以通过在激光芯片410侧面设置高反射膜470来减少侧面出光。激光芯片410中的N电极411所用材料例如可以为Cr/Al/Ti/Au、Cr/Pt/Au、Ni/Au、Ni/Ag/Pt/Au、Ti/Au或Ti/Pt/Au，本发明实施例不做限定。激光芯片410中的P电极416所用材料例如可以为Cr/Al/Ti/Au、Cr/Pt/Au、Ni/Au、Ni/Ag/Pt/Au、Ti/Au或Ti/Pt/Au。Please refer to FIGS. 19 to 22 together. In other embodiments, thelaser chip 410 may further include: anN electrode 411 , asubstrate 412 , an N-type semiconductor layer 413 , anactive layer 414 , a P-type semiconductor layer 415 andP electrode 416, wherein theN electrode 411 is formed on the side of thesubstrate 412, the N-type semiconductor layer 413 is formed on the side of thesubstrate 412 away from theN electrode 411, and theactive layer 414 is formed on the N-type semiconductor layer 413 away from thesubstrate 412 On one side, the P-type semiconductor layer 415 is formed on the side of theactive layer 414 away from the N-type semiconductor layer 413, and is etched down along theactive layer 414 and the P-type semiconductor layer 415 until the N-type semiconductor layer 413 stops. Etching is performed to form themesa structure 419 and the coupling grating 450 , and then aP electrode 416 is formed on the side of the P-type semiconductor layer 415 of themesa structure 419 away from theactive layer 414 . Themesa structure 419 may be formed in any region of thelaser chip 410 in the horizontal direction, or may be formed in the middle region of thelaser chip 410 in the horizontal direction. In this embodiment, thesubstrate 412 of thelaser chip 410 may be, for example, one of a gallium arsenide (GaAs)substrate 412 , asilicon substrate 412 or asapphire substrate 412 . The N-type semiconductor layer 413 is made of, for example, aluminum gallium arsenide (AlGaAs). The P-type semiconductor layer 415 is, for example, a group of P-type doped distributed Bragg mirrors, and a group of P-type doped distributed Bragg mirrors includes at least two layers of P-type doped distributed Bragg mirrors, each layer The P-type doped distributed Bragg mirror is composed of the same material with different metal composition values, for example, aluminum gallium arsenide (AlGaAs) is selected in this embodiment. The principle of the distributed Bragg mirror is to rely on two material layers with alternating high and low refractive indices to form many pairs of periodic structures so that the reflectivity of the distributed Bragg mirror can reach more than 99.5%. Theactive layer 414 may include a multiple quantum well typeactive layer 414 or a strained multiple quantum well typeactive layer 414, etc., which is not limited in the embodiment of the present invention. In the embodiment of the present invention, theactive layer 414 may be a multi-quantum well typeactive layer 414 composed of gallium arsenide (GaAs)/aluminum gallium arsenide (AlGaAs), or may be composed of indium gallium arsenide (InxGa1- The strained multi-quantum well typeactive layer 414 of xAs)/aluminum gallium arsenide (AlyGa1-yAs) is not limited in the embodiment of the present invention. The side area corresponding to theactive layer 414 can emit light, that is, theincident light wave 1000 can be obtained. In some embodiments, a high-reflection film 470 may also be provided on the side of thelaser chip 410 to reduce side light emission. The material used for theN electrode 411 in thelaser chip 410 can be, for example, Cr/Al/Ti/Au, Cr/Pt/Au, Ni/Au, Ni/Ag/Pt/Au, Ti/Au or Ti/Pt/Au. The embodiments of the invention are not limited. The material used for theP electrode 416 in thelaser chip 410 may be, for example, Cr/Al/Ti/Au, Cr/Pt/Au, Ni/Au, Ni/Ag/Pt/Au, Ti/Au or Ti/Pt/Au.

请一并参阅图19至图22所示，在一些实施例中，P型半导体层415上还可以设有电流接触层，通过电流接触层将P电极416与P型半导体层415连接。Please refer to FIG. 19 to FIG. 22 together. In some embodiments, the P-type semiconductor layer 415 may further be provided with a current contact layer, and the P-electrode 416 and the P-type semiconductor layer 415 are connected through the current contact layer.

请一并参阅图19至图22所示，在一些实施例中，激光芯片410还可以包括一钝化层，钝化层覆盖台面结构419的侧壁及其部分上表面而达到覆盖P型半导体层415和有源层414的目的，以实现侧壁钝化，减小器件的漏电通道，其中电流限制层为绝缘介质，选用的材料例如可以为SiO₂、SiN_x、HfO₂或Al₂O₃。Please refer to FIG. 19 to FIG. 22 together. In some embodiments, thelaser chip 410 may further include a passivation layer, and the passivation layer covers the sidewall of themesa structure 419 and a part of the upper surface thereof so as to cover the P-type semiconductor. The purpose oflayer 415 andactive layer 414 is to achieve sidewall passivation and reduce the leakage channel of the device, wherein the current confinement layer is an insulating medium, and the selected material can be, for example, SiO₂ , SiN_x , HfO₂ or Al₂ O₃ .

请一并参阅图19至图22所示，本实施例中的激光芯片410的发光原理为，将P型半导体层415连接供电电源正极以及将N型半导体层413连接供电电源负极后，在有源层414内存在粒子数反转，在激光媒质提供的增益足够超过损耗的情况下，当有电流注入时，光强将持续增加，处于高能态导带底的电子跃迁到处于低能态价带时，随着特定波长的光在激光芯片410两侧面水平方向来回震荡，放大过程不断重复，便形成了激光，在有源层414产生的激光中选择一定频率且方向一致的激光并优先放大选择的激光，对于其它频率以及方向的激光加以抑制，经过选择后的激光从激光芯片410侧面射出。Please refer to FIG. 19 to FIG. 22 together. The light-emitting principle of thelaser chip 410 in this embodiment is that after the P-type semiconductor layer 415 is connected to the positive electrode of the power supply and the N-type semiconductor layer 413 is connected to the negative electrode of the power supply, there is a There is a population inversion in thesource layer 414. In the case where the gain provided by the laser medium is enough to exceed the loss, when there is current injection, the light intensity will continue to increase, and the electrons at the bottom of the conduction band of the high energy state will transition to the valence band of the low energy state. When the light of a specific wavelength oscillates back and forth in the horizontal direction on both sides of thelaser chip 410, and the amplification process is repeated continuously, a laser is formed. Among the lasers generated by theactive layer 414, a laser with a certain frequency and the same direction is selected and preferentially amplified. The lasers of other frequencies and directions are suppressed, and the selected lasers are emitted from the side of thelaser chip 410 .

请一并参阅图19至图22所示，所述激光装置400中还包括出射光栅430，可以通过出射光栅430改变部分入射光波1000的出光角度θ，本实施例中例如可以通过出射光栅430使出光区域的出射光线900与激光芯片410的垂直方向形成一出光角度θ，当耦合光栅450锁定了特定波长的出射光线900，通过调节出射光栅430的间距周期，可以调节此出光角度θ，从而精确地控制发光方向，本实施例中，出射光栅430的间距周期例如为0.1μm -10μm，出光角度θ例如为0度-60度。在本实施例中，对于具有台面结构419的激光芯片410，台面结构419对应的出光区域可以位于激光芯片410水平方向的两侧区域其中之一，也可以位于激光芯片410水平方向的中间区域，出射光栅430可以形成于出光区域对应的台面结构419的表面，形成表面出射光栅430，本实施例中表面出射光栅430例如形成于台面结构419的P型半导体层415表面。Please refer to FIG. 19 to FIG. 22 together, thelaser device 400 further includes an exit grating 430 , and the exit grating 430 can change the exit angle θ of some incident light waves 1000 . In this embodiment, for example, the exit grating 430 can Theoutgoing light 900 in the light exit area and the vertical direction of thelaser chip 410 form a light outgoing angle θ. When the coupling grating 450 locks theoutgoing light 900 of a specific wavelength, the light outgoing angle θ can be adjusted by adjusting the interval period of theoutgoing grating 430, so as to accurately In this embodiment, the pitch period of the exit grating 430 is, for example, 0.1 μm to 10 μm, and the light exit angle θ is, for example, 0 degree to 60 degrees. In this embodiment, for thelaser chip 410 having themesa structure 419, the light emitting area corresponding to themesa structure 419 may be located in one of the two sides of thelaser chip 410 in the horizontal direction, or may be located in the middle area of thelaser chip 410 in the horizontal direction, The exit grating 430 can be formed on the surface of themesa structure 419 corresponding to the light exit area to form the surface exit grating 430 .

请一并参阅图19至图22所示，本实施例中，激光装置400也可以设有耦合光栅450，耦合光栅450可以设置在台面结构419的至少一侧，耦合光栅450能起到波长选择和波长稳定的效果，其原理是耦合光栅450允许的模式波长λ需要满足方程，即d=m×λ/2，其中d为耦合光栅450的周期，m为自然数，在固定了耦合光栅450的周期之后，即锁定了波长λ，由此实现了波长选择和波长稳定的效果，另外也可以通过改变耦合光栅450的周期获得不同波长的激光光谱。本实施例中，对于具有台面结构419的激光芯片410，通过耦合光栅450的波长选择作用及出射光栅430改变部分入射光波1000角度的作用，使激光装置400的出光区域对应于台面结构419所在的位置，台面结构419对应的出光区域可以位于激光芯片410水平方向的两侧区域其中之一，也可以位于激光芯片410水平方向的中间区域，出射光栅430可以形成于出光区域对应的台面结构419的表面，形成表面出射光栅430，本实施例中表面出射光栅430例如形成于台面结构419的P型半导体层415表面。耦合光栅450可以形成于激光芯片410出光区域对应的台面结构419的至少一侧，本实施例中，耦合光栅450可以形成于N型半导体层415的表面，获得表面耦合光栅450。具体的，当出光区域对应的台面结构419位于激光芯片410水平方向的一侧区域时，耦合光栅450形成于出光区域对应的台面结构419的一侧，当出光区域对应的台面结构419位于激光芯片410水平方向的中部区域时，耦合光栅450形成于出光区域对应的台面结构419的两侧。Please refer to FIG. 19 to FIG. 22 together. In this embodiment, thelaser device 400 may also be provided with acoupling grating 450. Thecoupling grating 450 may be disposed on at least one side of themesa structure 419, and the coupling grating 450 can play a role in wavelength selection. and the effect of wavelength stabilization, the principle is that the mode wavelength λ allowed by the coupling grating 450 needs to satisfy the equation, namely d=m×λ/2, where d is the period of the coupling grating 450 and m is a natural number. After the period, the wavelength λ is locked, thereby realizing the effects of wavelength selection and wavelength stabilization. In addition, laser spectra of different wavelengths can be obtained by changing the period of thecoupling grating 450 . In this embodiment, for thelaser chip 410 having themesa structure 419 , the wavelength selection effect of the coupling grating 450 and the effect of the exit grating 430 to change the angle of part of theincident light wave 1000 make the light exit area of thelaser device 400 correspond to the area where themesa structure 419 is located. Position, the light exit area corresponding to themesa structure 419 can be located in one of the two sides of thelaser chip 410 in the horizontal direction, or it can be located in the middle area of thelaser chip 410 in the horizontal direction, and the exit grating 430 can be formed on themesa structure 419 corresponding to the light exit area. On the surface, a surface exit grating 430 is formed. In this embodiment, the surface exit grating 430 is formed, for example, on the surface of the P-type semiconductor layer 415 of themesa structure 419 . The coupling grating 450 can be formed on at least one side of themesa structure 419 corresponding to the light-emitting area of thelaser chip 410 . In this embodiment, the coupling grating 450 can be formed on the surface of the N-type semiconductor layer 415 to obtain the surface coupling grating 450 . Specifically, when themesa structure 419 corresponding to the light exit area is located on one side of thelaser chip 410 in the horizontal direction, the coupling grating 450 is formed on one side of themesa structure 419 corresponding to the light exit area. When themesa structure 419 corresponding to the light exit area is located on the laser chip Thecoupling grating 450 is formed on both sides of themesa structure 419 corresponding to the light emitting region when the middle region of the 410 is in the horizontal direction.

请一并参阅图19至图22所示，出射光栅430与耦合光栅450相配合，通过调节耦合光栅450的周期锁定激光装置400中特定波长的光线作为入射光波1000，再通过调节出射光栅430的周期改变部分入射光波1000的出射角度，从而可以获得一系列出射角度变化的激光装置400。Please refer to FIG. 19 to FIG. 22 together. Theoutgoing grating 430 cooperates with thecoupling grating 450. By adjusting the period of the coupling grating 450, the light of a specific wavelength in thelaser device 400 is locked as theincident light wave 1000, and then by adjusting the period of theoutgoing grating 430 The outgoing angles of part of theincident light waves 1000 are periodically changed, so that a series oflaser devices 400 with varying outgoing angles can be obtained.

请一并参阅图7至图22所示，在一些实施例中，在出光区域与外界环境相接的出射面上还可以设有光学结构421或光学元件，光学元件例如可以为棱镜、漫射器、折射光学元件或衍射光学元件等其中一种，光学结构421例如可以为光扩散结构等。所述光学结构421和光学元件对出射的激光束起到整形的作用，即改变出射激光束的强度分布为所需的强度分布，同时调整出射激光束的相位分布从而控制出射激光束的传播路径。Please refer to FIG. 7 to FIG. 22 together. In some embodiments, anoptical structure 421 or an optical element may be provided on the outgoing surface where the light outgoing area is connected to the external environment. The optical element may be, for example, a prism, a diffusing One of a filter, a refractive optical element, or a diffractive optical element, and the like, and theoptical structure 421 may be, for example, a light diffusing structure or the like. Theoptical structure 421 and the optical elements play a role in shaping the outgoing laser beam, that is, changing the intensity distribution of the outgoing laser beam to a desired intensity distribution, and adjusting the phase distribution of the outgoing laser beam to control the propagation path of the outgoing laser beam .

请一并参阅图23所示，本发明还提供一种激光装置400的制备方法，其至少包括以下步骤：Please also refer to FIG. 23 , the present invention also provides a method for fabricating alaser device 400 , which at least includes the following steps:

S1.制备激光芯片410，在所述激光芯片410上形成出光区域；S1. Prepare alaser chip 410, and form a light-emitting area on thelaser chip 410;

S2.在所述出光区域形成出射光栅430，用于调整入射光波的出射角度。S2. An exit grating 430 is formed in the light exit area to adjust the exit angle of the incident light wave.

请一并参阅图7至图18及图23所示，激光装置400例如可以为侧面出光的激光装置400，在步骤S1中，首先制备激光芯片410，具体的，通过化学气相沉积、分子束外延或者金属有机气相沉积的方法在衬底412上依次沉积N型半导体层413、有源层414和P型半导体层415。图案化有源层414和P型半导体层415，具体的，例如采用湿法刻蚀、干法刻蚀或两者相结合的刻蚀方法刻蚀有源层414和P型半导体层415的两侧且刻蚀至N型半导体层413时停止，从而形成脊形波导结构417。在其他实施例中也可以通过离子注入法及特殊氧化法等方式获得脊形波导结构417。本实施例中，通过电镀或蒸镀的方法在脊形波导结构417的P型半导体层415上形成P电极416，通过电镀或蒸镀的方法在衬底412背离N型半导体层413的一侧形成N电极411。所述激光芯片410的衬底412例如可以为砷化镓（GaAs）衬底412、硅衬底412或蓝宝石衬底412中的一种。N型半导体层413和P型半导体层415例如选用材料铝镓砷（AlGaAs）制成。有源层414可以包括多量子阱型有源层414或应变多量子阱型有源层414等，本发明实施例不做限定。本发明实施例中，有源层414可以是组成材料为砷化镓（GaAs）/铝镓砷（AlGaAs）的多量子阱型有源层414，也可以是组成材料为铟镓砷（InxGa1-xAs）/铝镓砷（AlyGa1-yAs）的应变多量子阱型有源层414，本发明实施例不做限定。有源层414所对应的侧面区域可以产生入射光波1000，在一些实施例中，也可以通过在激光芯片410的侧面设置高反射膜470来减少侧面出光。激光芯片410中的N电极411所用材料例如可以为Cr/Al/Ti/Au、Cr/Pt/Au、Ni/Au、Ni/Ag/Pt/Au、Ti/Au或Ti/Pt/Au，本发明实施例不做限定。激光芯片410中的P电极416所用材料例如可以为Cr/Al/Ti/Au、Cr/Pt/Au、Ni/Au、Ni/Ag/Pt/Au、Ti/Au或Ti/Pt/Au。Please refer to FIG. 7 to FIG. 18 and FIG. 23 together. For example, thelaser device 400 can be a side-emittinglaser device 400. In step S1, alaser chip 410 is first prepared. Specifically, chemical vapor deposition, molecular beam epitaxy Alternatively, an N-type semiconductor layer 413 , anactive layer 414 and a P-type semiconductor layer 415 are sequentially deposited on thesubstrate 412 by the method of metal organic vapor deposition. Theactive layer 414 and the P-type semiconductor layer 415 are patterned. Specifically, for example, wet etching, dry etching, or a combination of the two etching methods are used to etch both of theactive layer 414 and the P-type semiconductor layer 415. side and stop when the etching reaches the N-type semiconductor layer 413 , thereby forming theridge waveguide structure 417 . In other embodiments, theridge waveguide structure 417 can also be obtained by means of ion implantation, special oxidation, or the like. In this embodiment, aP electrode 416 is formed on the P-type semiconductor layer 415 of theridge waveguide structure 417 by electroplating or evaporation, and a side of thesubstrate 412 away from the N-type semiconductor layer 413 is formed by electroplating or evaporation. TheN electrode 411 is formed. Thesubstrate 412 of thelaser chip 410 may be, for example, one of a gallium arsenide (GaAs)substrate 412 , asilicon substrate 412 or asapphire substrate 412 . For example, the N-type semiconductor layer 413 and the P-type semiconductor layer 415 are made of aluminum gallium arsenide (AlGaAs). Theactive layer 414 may include a multiple quantum well typeactive layer 414 or a strained multiple quantum well typeactive layer 414, etc., which is not limited in the embodiment of the present invention. In the embodiment of the present invention, theactive layer 414 may be a multi-quantum well typeactive layer 414 composed of gallium arsenide (GaAs)/aluminum gallium arsenide (AlGaAs), or may be composed of indium gallium arsenide (InxGa1- The strained multi-quantum well typeactive layer 414 of xAs)/aluminum gallium arsenide (AlyGa1-yAs) is not limited in the embodiment of the present invention. The side area corresponding to theactive layer 414 can generate theincident light wave 1000 , and in some embodiments, a high-reflection film 470 can also be provided on the side of thelaser chip 410 to reduce side light outgoing. The material used for theN electrode 411 in thelaser chip 410 can be, for example, Cr/Al/Ti/Au, Cr/Pt/Au, Ni/Au, Ni/Ag/Pt/Au, Ti/Au or Ti/Pt/Au. The embodiments of the invention are not limited. The material used for theP electrode 416 in thelaser chip 410 may be, for example, Cr/Al/Ti/Au, Cr/Pt/Au, Ni/Au, Ni/Ag/Pt/Au, Ti/Au or Ti/Pt/Au.

请一并参阅图7至图18及图23所示，在步骤S1中，在激光装置400中形成耦合光栅450，耦合光栅450位于有源层414的一侧，当电流注入激光装置400后，有源层414内电子一一空穴复合，辐射出能量相应的光子，这些光子将受到有源层414一侧耦合光栅450的反射后，从激光装置400侧面发射出来，实现激光装置400的侧面发光，此时耦合光栅450对光子的反射为布拉格发射，耦合光栅450的栅条间入射光和反射光的方向恰好相反，耦合光栅450能起到波长选择和波长稳定的效果，其原理是耦合光栅450允许的模式波长λ需要满足方程，即d=m×λ/2，其中d为耦合光栅450的周期，m为自然数，在固定了耦合光栅450的周期之后，即锁定了波长λ，由此实现了波长选择和波长稳定的效果，另外也可以通过改变耦合光栅450的周期获得不同波长的激光光谱。耦合光栅450可以形成于激光芯片410的表面，获得表面耦合光栅450，也可以形成掩埋于激光芯片410内部，获得掩埋耦合光栅450，通过耦合光栅450的设置位置可以确定出光区域的位置，具体的，在步骤S1中，出光区域可以形成于激光装置400水平方向的任意区域，出光区域可以形成于激光装置400水平方向的两侧区域其中之一，出光区域也可以形成于激光装置400水平方向的中部区域，耦合光栅450设置在出光区域至少一侧。Please refer to FIG. 7 to FIG. 18 and FIG. 23 together. In step S1, a coupling grating 450 is formed in thelaser device 400. Thecoupling grating 450 is located on one side of theactive layer 414. After the current is injected into thelaser device 400, The electrons and holes in theactive layer 414 recombine one by one to radiate photons with corresponding energy. These photons will be reflected by the coupling grating 450 on the side of theactive layer 414 and then emitted from the side of thelaser device 400 to realize the side of thelaser device 400 . At this time, the reflection of the photons by the coupling grating 450 is Bragg emission. The directions of the incident light and the reflected light between the gratings of the coupling grating 450 are exactly opposite. The coupling grating 450 can play the effect of wavelength selection and wavelength stability. The principle is the coupling The mode wavelength λ allowed by the grating 450 needs to satisfy the equation, namely d=m×λ/2, where d is the period of the coupling grating 450 and m is a natural number. After the period of the coupling grating 450 is fixed, the wavelength λ is locked, and is determined by This achieves the effects of wavelength selection and wavelength stabilization, and in addition, laser spectra of different wavelengths can be obtained by changing the period of thecoupling grating 450 . The coupling grating 450 can be formed on the surface of thelaser chip 410 to obtain the surface coupling grating 450, or it can be formed and buried inside thelaser chip 410 to obtain the buried coupling grating 450. The position of the light-emitting region can be determined by the setting position of thecoupling grating 450. , in step S1, the light emitting area can be formed in any area in the horizontal direction of thelaser device 400, the light emitting area can be formed in one of the two sides of thelaser device 400 in the horizontal direction, and the light emitting area can also be formed in the horizontal direction of thelaser device 400. In the middle region, the coupling grating 450 is disposed on at least one side of the light emitting region.

请一并参阅图7至图18及图23所示，在步骤S1中，根据制备表面耦合光栅450所用的材料不同，分别可以采用以下几种方法获得表面耦合光栅450：若制备表面耦合光栅450的材料为金属材料，则可采用金属沉积和光刻技术形成表面耦合光栅450；若制备表面耦合光栅450的材料为半导体材料，则可通过刻蚀P型半导体层415形成表面耦合光栅450；若制备表面耦合光栅450的材料为电介质，例如氮化硅（SiNx）或二氧化硅（SiO2），则可通过化学气相沉积或者原子层沉积和光刻技术形成表面耦合光栅450。根据制备掩埋耦合光栅450所用的材料不同，分别可以采用以下几种方法获得掩埋耦合光栅450：若制备掩埋耦合光栅450的材料为半导体材料，则激光芯片410分两次生长，首先生长到P型半导体层415或N型半导体层413，通过刻蚀半导体层形成掩埋耦合光栅450，刻蚀完成后在掩埋耦合光栅450上进行再生长，完成激光芯片410剩余结构的生长；若制备掩埋耦合光栅450的材料为电介质，例如氮化硅、二氧化硅等，则通过化学气相沉积、原子层沉积或光刻技术形成掩埋耦合光栅450。激光芯片410分两次生长，首先生长到P型半导体层415或N型半导体层413，然后在半导体层上形成掩埋耦合光栅450，掩埋耦合光栅450制备完成后继续再生长，完成激光芯片410剩余结构的生长。Please refer to FIG. 7 to FIG. 18 and FIG. 23 together. In step S1, according to different materials used for preparing the surface-coupling grating 450, the following methods can be used to obtain the surface-coupling grating 450. If the surface-coupling grating 450 is prepared If the material of the surface coupling grating 450 is a metal material, metal deposition and photolithography techniques can be used to form the surface coupling grating 450; if the material for preparing the surface coupling grating 450 is a semiconductor material, the surface coupling grating 450 can be formed by etching the P-type semiconductor layer 415; The material for preparing the surface coupling grating 450 is a dielectric, such as silicon nitride (SiNx) or silicon dioxide (SiO 2 ), and the surface coupling grating 450 can be formed by chemical vapor deposition or atomic layer deposition and photolithography. According to the different materials used for preparing the buried coupling grating 450, the buried coupling grating 450 can be obtained by the following methods: If the material for preparing the buried coupling grating 450 is a semiconductor material, thelaser chip 410 is grown in two steps, and firstly the P-type is grown. Thesemiconductor layer 415 or the N-type semiconductor layer 413 is formed by etching the semiconductor layer to form the buried coupling grating 450. After the etching is completed, the buried coupling grating 450 is regrown to complete the growth of the remaining structure of thelaser chip 410; if the buried coupling grating 450 is prepared The material is a dielectric, such as silicon nitride, silicon dioxide, etc., and the buried coupling grating 450 is formed by chemical vapor deposition, atomic layer deposition or photolithography. Thelaser chip 410 is grown in two steps, firstly growing to the P-type semiconductor layer 415 or the N-type semiconductor layer 413, and then forming a buried coupling grating 450 on the semiconductor layer. After the buried coupling grating 450 is prepared, it continues to grow again to complete the rest of thelaser chip 410. growth of the structure.

请一并参阅图7至图18及图23所示，在步骤S2中，在激光装置400中形成出射光栅430，在本实施例中，出射光栅430形成于激光芯片410有源层414的一侧，且与所述耦合光栅450并排设置，出射光栅430所对应的激光芯片410中的相应区域为出光区域，可以通过出射光栅430改变激光装置400的部分入射光波1000的角度，本实施例中例如可以通过出射光栅430使激光装置400的出射光线900与激光芯片410垂直方向之间形成一出光角度θ，当耦合光栅450锁定了特定波长的出射光线900，通过调节出射光栅430的间距周期，可以调节出光角度θ，从而使激光装置400中部分入射光波1000由侧面出光变为与激光装置400呈一倾斜角度出光，继而达到精确控制发光方向的目的，本实施例中，出射光栅430的间距周期例如为0.1μm-10μm，出光角度θ例如为0度-60度。Please refer to FIG. 7 to FIG. 18 and FIG. 23 together. In step S2 , an exit grating 430 is formed in thelaser device 400 . In this embodiment, the exit grating 430 is formed on a side of theactive layer 414 of thelaser chip 410 . side, and arranged side by side with the coupling grating 450, the corresponding area in thelaser chip 410 corresponding to the exit grating 430 is the light exit area, and the angle of part of theincident light wave 1000 of thelaser device 400 can be changed through the exit grating 430. In this embodiment For example, a light exit angle θ can be formed between theexit light 900 of thelaser device 400 and the vertical direction of thelaser chip 410 through the exit grating 430. When the coupling grating 450 locks theexit light 900 of a specific wavelength, by adjusting the interval period of the exit grating 430, The light emitting angle θ can be adjusted, so that part of theincident light waves 1000 in thelaser device 400 can be emitted from the side surface to emit light at an oblique angle to thelaser device 400, so as to achieve the purpose of precisely controlling the light emitting direction. In this embodiment, the distance between theemission gratings 430 The period is, for example, 0.1 μm to 10 μm, and the light exit angle θ is, for example, 0 to 60 degrees.

请一并参阅图7至图18及图23所示，具体的，在步骤S1和步骤S2中，出光区域可以形成于激光装置400水平方向的任意区域，在本实施例中，出光区域可以形成于激光装置400水平方向的两侧区域其中之一，例如呈长条型，此时位于出光区域的出射光栅430可以形成于激光装置400水平方向的两侧区域其中之一，更具体的，出射光栅430可以形成于激光芯片410两侧区域的表面，也可以形成于激光芯片410两侧区域的内部，本实施例中，出射光栅430可以形成于P型半导体层上，获得表面出射光栅430，出射光栅430也可以形成掩埋于P型半导体层或N型半导体层内部的掩埋出射光栅430。在其他实施例中，出光区域可以形成于激光装置400水平方向的中部区域，此时位于出光区域的出射光栅430可以形成于激光装置400水平方向的中部区域，更具体的，出射光栅430可以形成于激光芯片410中部区域的表面，也可以形成于激光芯片410中部区域的内部，本实施例中，出射光栅430可以形成于P型半导体层，获得表面出射光栅430，出射光栅430也可以形成掩埋于P型半导体层或N型半导体层内部的掩埋出射光栅430。Please refer to FIG. 7 to FIG. 18 and FIG. 23 together. Specifically, in step S1 and step S2, the light-emitting area can be formed in any area in the horizontal direction of thelaser device 400. In this embodiment, the light-emitting area can be formed One of the two side regions in the horizontal direction of thelaser device 400 is, for example, a strip shape. At this time, the exit grating 430 located in the light exit region can be formed on one of the two sides of thelaser device 400 in the horizontal direction. More specifically, the exit grating 430 The grating 430 can be formed on the surface of the area on both sides of thelaser chip 410, or can be formed inside the area on both sides of thelaser chip 410. In this embodiment, the exit grating 430 can be formed on the P-type semiconductor layer to obtain the surface exit grating 430, The exit grating 430 may also form a buried exit grating 430 buried inside the P-type semiconductor layer or the N-type semiconductor layer. In other embodiments, the light exit area may be formed in the horizontal middle area of thelaser device 400, and the exit grating 430 located in the light exit area may be formed in the horizontal middle area of thelaser device 400. More specifically, the exit grating 430 may be formed In this embodiment, the exit grating 430 can be formed on the P-type semiconductor layer to obtain the surface exit grating 430, and the exit grating 430 can also be formed buried Buried exit grating 430 inside the P-type semiconductor layer or the N-type semiconductor layer.

请一并参阅图7至图18及图23所示，具体的，在步骤S2中，在侧面出光的激光装置400中，根据制备表面出射光栅430所用的材料不同，分别可以采用以下几种方法获得表面出射光栅430：若制备表面出射光栅430的材料为金属材料，则可采用金属沉积和光刻技术形成表面出射光栅430；若制备表面出射光栅430的材料为半导体材料，则可通过刻蚀P型半导体层415形成表面出射光栅430；若制备表面出射光栅430的材料为电介质，例如氮化硅（SiNx）或二氧化硅（SiO2），则可通过化学气相沉积或者原子层沉积和光刻技术形成表面出射光栅430。在形成表面出射光栅430的过程中，表面出射光栅430可以与表面耦合光栅450同时形成，也可以与表面耦合光栅450分步形成。根据制备掩埋出射光栅430所用的材料不同，分别可以采用以下几种方法获得掩埋出射光栅430：若制备掩埋出射光栅430的材料为半导体材料，则激光芯片410分两次生长，首先生长到P型半导体层415或N型半导体层413，通过刻蚀半导体层形成掩埋出射光栅430，刻蚀完成后在掩埋出射光栅430上进行再生长，完成激光芯片410剩余结构的生长；若制备掩埋出射光栅430的材料为电介质，例如氮化硅、二氧化硅等，则通过化学气相沉积、原子层沉积或光刻技术形成掩埋出射光栅430。激光芯片410分两次生长，首先生长到P型半导体层415或N型半导体层413，然后在半导体层上形成掩埋出射光栅430，掩埋出射光栅430制备完成后继续再生长，完成激光芯片410剩余结构的生长。在形成掩埋出射光栅430的过程中可以与形成掩埋耦合光栅同步完成。Please refer to FIG. 7 to FIG. 18 and FIG. 23 together. Specifically, in step S2, in step S2, in thelaser device 400 that emits light from the side surface, the following methods can be used respectively according to the different materials used to prepare the surface emission grating 430 Obtaining the surface exit grating 430: if the material for preparing the surface exit grating 430 is a metal material, metal deposition and photolithography techniques can be used to form the surface exit grating 430; if the material for preparing the surface exit grating 430 is a semiconductor material, etching can be used The P-type semiconductor layer 415 forms the surface exit grating 430; if the material for preparing the surface exit grating 430 is a dielectric, such as silicon nitride (SiNx) or silicon dioxide (SiO2), chemical vapor deposition or atomic layer deposition and lithography can be used technique forms the surface exit grating 430 . In the process of forming the surface exit grating 430 , the surface exit grating 430 may be formed simultaneously with the surface coupling grating 450 , or may be formed separately from the surface coupling grating 450 . According to the different materials used for preparing the buried exit grating 430, the following methods can be used to obtain the buried exit grating 430: If the material for preparing the buried exit grating 430 is a semiconductor material, thelaser chip 410 is grown in two steps, and firstly the P-type is grown. Thesemiconductor layer 415 or the N-type semiconductor layer 413 is formed by etching the semiconductor layer to form a buried exit grating 430. After the etching is completed, the buried exit grating 430 is regrown to complete the growth of the remaining structure of thelaser chip 410; if the buried exit grating 430 is prepared The material is a dielectric, such as silicon nitride, silicon dioxide, etc., and the buried exit grating 430 is formed by chemical vapor deposition, atomic layer deposition or photolithography. Thelaser chip 410 is grown in two times, firstly growing to the P-type semiconductor layer 415 or the N-type semiconductor layer 413, and then forming a buried exit grating 430 on the semiconductor layer. After the buried exit grating 430 is prepared, it continues to grow again to complete the rest of thelaser chip 410. growth of the structure. The process of forming the buried exit grating 430 may be done simultaneously with the formation of the buried coupling grating.

请一并参阅图7至图18及图23所示，在本实施例中，在步骤S1及步骤S2中，出射光栅430与耦合光栅450相配合，通过调节耦合光栅450的周期锁定激光装置400中特定波长的光线作为入射光波1000，再通过调节出射光栅430的周期改变部分入射光波1000的出射角度，获得一系列出射光线900，从而可以获得一系列出射角度按预设倾斜角度变化的激光装置400。Please refer to FIG. 7 to FIG. 18 and FIG. 23 together. In this embodiment, in step S1 and step S2, the output grating 430 cooperates with the coupling grating 450, and thelaser device 400 is locked by adjusting the period of thecoupling grating 450. The light with a specific wavelength in the middle is used as theincident light wave 1000, and then the outgoing angle of part of theincident light wave 1000 is changed by adjusting the period of theoutgoing grating 430 to obtain a series of outgoinglight rays 900, so that a series of outgoing angles can be obtained. 400.

请一并参阅图19至图23所示，对于具有台面结构319的激光装置400中，在步骤S1中，首先制备激光芯片410，具体的，通过化学气相沉积、分子束外延或者金属有机气相沉积的方法在衬底412上依次沉积N型半导体层413、有源层414和P型半导体层415。图案化有源层414和P型半导体层415，沿着有源层414和P型半导体层415向下刻蚀，直至N型半导体层413时停止刻蚀，从而形成台面结构419以及耦合光栅450，再在台面结构419的P型半导体层415上背离有源层414的一侧蒸镀或电镀形成P电极416。具体的，例如采用湿法刻蚀、干法刻蚀或两者相结合的刻蚀方法，沿着有源层414和P型半导体层415向下刻蚀，直至N型半导体层413时停止刻蚀，从而形成台面结构419以及耦合光栅450。在其他实施例中也可以通过离子注入法及特殊氧化法等方式获得台面结构419以及耦合光栅450，再在所形成台面的P型半导体层415上通过例如电镀的方法形成P电极416。还可以在台面结构419中P型半导体层415背离有源层414的一侧通过化学气相沉积、分子束外延或者金属有机气相沉积的方法形成P电极416，P电极416所用材料例如可以为Cr/Al/Ti/Au、Cr/Pt/Au、Ni/Au、Ni/Ag/Pt/Au、Ti/Au或Ti/Pt/Au。台面结构419可以形成于激光芯片410水平方向的任意一侧区域，也可以形成于激光芯片410水平方向的中部区域，所述台面结构419即对应本实施例中的出光区域，在本实施例中，出光区域例如呈长条型。所述激光芯片410的衬底412例如可以为砷化镓（GaAs）衬底412、硅衬底412或蓝宝石衬底412中的一种。N型半导体层413例如选用材料铝镓砷（AlGaAs）制成。P型半导体层415例如为一组P型掺杂的分布式布拉格反射镜，一组P型掺杂的分布式布拉格反射镜中包括至少两层P型掺杂的分布式布拉格反射镜，每层P型掺杂的分布式布拉格反射镜由金属组分值不同的相同材料构成，例如本实施例中选用材料铝镓砷（AlGaAs）。分布式布拉格反射镜的原理是依靠两种高低折射率相间的材料层构成很多对的周期结构以使分布式布拉格反射镜的反射率达到99.5％以上。有源层414可以包括多量子阱型有源层414或应变多量子阱型有源层414等，本发明实施例不做限定。本发明实施例中，有源层414可以是组成材料为砷化镓（GaAs）/铝镓砷（AlGaAs）的多量子阱型有源层414，也可以是组成材料为铟镓砷（InxGa1-xAs）/铝镓砷（AlyGa1-yAs）的应变多量子阱型有源层414，本发明实施例不做限定。有源层414所对应的侧面区域可以发射光线，即获得入射光波1000。在一些实施例中，也可以通过在激光芯片410侧面设置高反射膜470来减少侧面出光。Please refer to FIG. 19 to FIG. 23 together. For thelaser device 400 having the mesa structure 319, in step S1, alaser chip 410 is first prepared, specifically, chemical vapor deposition, molecular beam epitaxy or metal organic vapor deposition A method of depositing an N-type semiconductor layer 413 , anactive layer 414 and a P-type semiconductor layer 415 on thesubstrate 412 in sequence. Theactive layer 414 and the P-type semiconductor layer 415 are patterned and etched down along theactive layer 414 and the P-type semiconductor layer 415 until the N-type semiconductor layer 413 is stopped, thereby forming themesa structure 419 and the coupling grating 450 Then, aP electrode 416 is formed by vapor deposition or electroplating on the side of the P-type semiconductor layer 415 of themesa structure 419 away from theactive layer 414 . Specifically, for example, wet etching, dry etching or a combination of the two etching methods are used to etch down along theactive layer 414 and the P-type semiconductor layer 415 until the N-type semiconductor layer 413 is stopped. etched to form themesa structure 419 and thecoupling grating 450 . In other embodiments, themesa structure 419 and the coupling grating 450 can also be obtained by ion implantation and special oxidation, and then theP electrode 416 is formed on the P-type semiconductor layer 415 of the formed mesa by, for example, electroplating. The P-electrode 416 can also be formed on the side of the P-type semiconductor layer 415 away from theactive layer 414 in themesa structure 419 by chemical vapor deposition, molecular beam epitaxy or metal organic vapor deposition. The material used for the P-electrode 416 can be, for example, Cr/ Al/Ti/Au, Cr/Pt/Au, Ni/Au, Ni/Ag/Pt/Au, Ti/Au or Ti/Pt/Au. Themesa structure 419 can be formed on any side area of thelaser chip 410 in the horizontal direction, or can be formed in the middle area of thelaser chip 410 in the horizontal direction. Themesa structure 419 corresponds to the light emitting area in this embodiment. , the light emitting area is, for example, a long strip. Thesubstrate 412 of thelaser chip 410 may be, for example, one of a gallium arsenide (GaAs)substrate 412 , asilicon substrate 412 or asapphire substrate 412 . The N-type semiconductor layer 413 is made of, for example, aluminum gallium arsenide (AlGaAs). The P-type semiconductor layer 415 is, for example, a group of P-type doped distributed Bragg mirrors, and a group of P-type doped distributed Bragg mirrors includes at least two layers of P-type doped distributed Bragg mirrors, each layer The P-type doped distributed Bragg mirror is composed of the same material with different metal composition values, for example, aluminum gallium arsenide (AlGaAs) is selected in this embodiment. The principle of the distributed Bragg mirror is to rely on two material layers with alternating high and low refractive indices to form many pairs of periodic structures so that the reflectivity of the distributed Bragg mirror can reach more than 99.5%. Theactive layer 414 may include a multiple quantum well typeactive layer 414 or a strained multiple quantum well typeactive layer 414, etc., which is not limited in the embodiment of the present invention. In the embodiment of the present invention, theactive layer 414 may be a multi-quantum well typeactive layer 414 composed of gallium arsenide (GaAs)/aluminum gallium arsenide (AlGaAs), or may be composed of indium gallium arsenide (InxGa1- The strained multi-quantum well typeactive layer 414 of xAs)/aluminum gallium arsenide (AlyGa1-yAs) is not limited in the embodiment of the present invention. The side area corresponding to theactive layer 414 can emit light, that is, theincident light wave 1000 can be obtained. In some embodiments, a high-reflection film 470 may also be provided on the side of thelaser chip 410 to reduce side light emission.

请一并参阅图19至图23所示，在步骤S1中，在一些实施例中，还可以通过化学气相沉积、分子束外延或者金属有机气相沉积的方法在P型半导体层415上形成电流接触层，通过电流接触层将P电极416与P型半导体层415连接。Please refer to FIG. 19 to FIG. 23 together. In step S1, in some embodiments, a current contact may be formed on the P-type semiconductor layer 415 by chemical vapor deposition, molecular beam epitaxy, or metal organic vapor deposition. layer, theP electrode 416 is connected to the Ptype semiconductor layer 415 through a current contact layer.

请一并参阅图19至图23所示，在步骤S1中，在一些实施例中，还可以通过化学气相沉积、分子束外延或者金属有机气相沉积的方法在激光芯片410中形成钝化层，钝化层覆盖台面结构419的侧壁及其部分上表面而达到覆盖P型半导体层415和有源层414的目的，以实现侧壁钝化，减小器件的漏电通道，其中电流限制层为绝缘介质，选用的材料例如可以为SiO₂、SiN_x、HfO₂或Al₂O₃。Please refer to FIG. 19 to FIG. 23 together. In step S1, in some embodiments, a passivation layer may also be formed in thelaser chip 410 by chemical vapor deposition, molecular beam epitaxy or metal organic vapor deposition. The passivation layer covers the sidewall of themesa structure 419 and part of its upper surface to cover the P-type semiconductor layer 415 and theactive layer 414, so as to achieve passivation of the sidewall and reduce the leakage channel of the device, wherein the current confinement layer is For the insulating medium, the selected material can be, for example, SiO₂ , SiN_x , HfO₂ or Al₂ O₃ .

请一并参阅图19至图23所示，在本实施例中，在步骤1中，在激光装置400中形成耦合光栅450，耦合光栅450能起到波长选择和波长稳定的效果，其原理是耦合光栅450允许的模式波长λ需要满足方程，即d=m×λ/2，其中d为耦合光栅450的周期，m为自然数，在固定了耦合光栅450的周期之后，即锁定了波长λ，由此实现了波长选择和波长稳定的效果，另外也可以通过改变耦合光栅450的周期获得不同波长的激光光谱。本实施例中，耦合光栅450可以形成于台面结构419的至少一侧，使激光芯片410的出光区域对应于台面结构419所在的位置，本实施例中，耦合光栅450可以形成于N型半导体层415的表面，获得表面耦合光栅450。具体的，当出光区域对应的台面结构419位于激光芯片410水平方向的一侧区域时，耦合光栅450形成于出光区域对应的台面结构419的一侧，当出光区域对应的台面结构419位于激光芯片410水平方向的中部区域时，耦合光栅450形成于出光区域对应的台面结构419的两侧。通过化学气相沉积法、原子层沉积法或金属沉积法、干法刻蚀法、湿法刻蚀法或两者相结合的刻蚀方法形成耦合光栅450，根据制备表面耦合光栅450所用的材料不同，分别可以采用以下几种方法获得表面耦合光栅450：若制备表面耦合光栅450的材料为金属材料，则可采用金属沉积和光刻技术在P型半导体层415或N型半导体层413上形成表面耦合光栅450；若制备表面耦合光栅450的材料为半导体材料，则可通过刻蚀P型半导体层415或N型半导体层413形成表面耦合光栅450；若制备表面耦合光栅450的材料为电介质，例如氮化硅（SiN_x）或二氧化硅（SiO₂），则可通过化学气相沉积或者原子层沉积和光刻技术在P型半导体层415或N型半导体层413上形成表面耦合光栅450。在一些实施例中，表面耦合光栅450与表面出射光栅430所用的材料及制备方法可以不相同。在一些实施例中，表面耦合光栅450与表面出射光栅430可以同步完成，也可以分步完成。Please refer to FIG. 19 to FIG. 23 together. In this embodiment, instep 1, a coupling grating 450 is formed in thelaser device 400. The coupling grating 450 can have the effect of wavelength selection and wavelength stabilization. The principle is as follows: The mode wavelength λ allowed by the coupling grating 450 needs to satisfy the equation, namely d=m×λ/2, where d is the period of the coupling grating 450 and m is a natural number. After the period of the coupling grating 450 is fixed, the wavelength λ is locked, Thus, the effects of wavelength selection and wavelength stabilization are achieved, and in addition, laser spectra of different wavelengths can be obtained by changing the period of thecoupling grating 450 . In this embodiment, the coupling grating 450 can be formed on at least one side of themesa structure 419, so that the light-emitting area of thelaser chip 410 corresponds to the position of themesa structure 419. In this embodiment, the coupling grating 450 can be formed on the N-type semiconductor layer 415, the surface coupled grating 450 is obtained. Specifically, when themesa structure 419 corresponding to the light exit area is located on one side of thelaser chip 410 in the horizontal direction, the coupling grating 450 is formed on one side of themesa structure 419 corresponding to the light exit area. When themesa structure 419 corresponding to the light exit area is located on the laser chip Thecoupling grating 450 is formed on both sides of themesa structure 419 corresponding to the light emitting region when the middle region of the 410 is in the horizontal direction. Thecoupling grating 450 is formed by chemical vapor deposition method, atomic layer deposition method or metal deposition method, dry etching method, wet etching method or a combination of the two etching methods, according to different materials used for preparing the surface coupling grating 450 , the surface-coupling grating 450 can be obtained by the following methods: if the material for preparing the surface-coupling grating 450 is a metal material, metal deposition and photolithography techniques can be used to form a surface on the P-type semiconductor layer 415 or the N-type semiconductor layer 413 Coupling grating 450; if the material for preparing the surface coupling grating 450 is a semiconductor material, the surface coupling grating 450 can be formed by etching the P-type semiconductor layer 415 or the N-type semiconductor layer 413; if the material for preparing the surface coupling grating 450 is a dielectric, for example Silicon nitride (SiN_x ) or silicon dioxide (SiO₂ ), and the surface coupling grating 450 can be formed on the P-type semiconductor layer 415 or the N-type semiconductor layer 413 by chemical vapor deposition or atomic layer deposition and photolithography. In some embodiments, the materials and fabrication methods used for the surface coupling grating 450 and the surface exit grating 430 may be different. In some embodiments, the surface coupling grating 450 and the surface exit grating 430 can be completed simultaneously or in steps.

请一并参阅图19至图23所示，在步骤S2中，通过化学气相沉积法、原子层沉积法或金属沉积法、干法刻蚀法、湿法刻蚀法或两者相结合的刻蚀方法，在激光芯片410中形成出射光栅430，用于调整光线的出射角度，本实施例中例如可以通过出射光栅430使激光装置400的部分入射光波1000形成与激光芯片410垂直方向之间呈一出光角度θ的出射光线900，当耦合光栅450锁定了特定波长的出射光线900，通过调节出射光栅430的间距周期，可以调节出射光线900的出光角度θ，从而使激光装置400中部分入射光波1000由侧面出光变为与激光装置400呈一倾斜角度出光，继而达到精确控制发光方向的目的，本实施例中，出射光栅430的间距周期例如为0.1μm-10μm，出光角度θ例如为0度-60度。在本实施例中，对于具有台面结构419的激光装置400，台面结构419对应的出光区域可以位于激光装置400水平方向的两侧区域其中之一，也可以位于激光装置400水平方向的中间区域，出射光栅430可以形成于出光区域对应的台面结构419的表面，形成表面出射光栅430，本实施例中表面出射光栅430例如形成于台面结构419的P型半导体层415表面。具体的，根据制备表面出射光栅430所用的材料不同，分别可以采用以下几种方法获得表面出射光栅430：若制备表面出射光栅430的材料为金属材料，则可采用金属沉积和光刻技术形成表面出射光栅430；若制备表面出射光栅430的材料为半导体材料，则可通过刻蚀P型半导体层415形成表面出射光栅430；若制备表面出射光栅430的材料为电介质，例如氮化硅（SiN_x）或二氧化硅（SiO₂），则可通过化学气相沉积或者原子层沉积和光刻技术形成表面出射光栅430。Please refer to FIG. 19 to FIG. 23 together. In step S2, chemical vapor deposition, atomic layer deposition or metal deposition, dry etching, wet etching, or a combination of the two Etching method, an exit grating 430 is formed in thelaser chip 410 to adjust the exit angle of the light. In this embodiment, for example, the exit grating 430 can be used to form part of theincident light wave 1000 of thelaser device 400 in a vertical direction with thelaser chip 410. For anoutgoing light 900 with a light exit angle θ, when the coupling grating 450 locks theoutgoing light 900 with a specific wavelength, by adjusting the interval period of the exit grating 430, the light exit angle θ of theoutgoing light 900 can be adjusted, so that part of the incident light wave in thelaser device 400 can be adjusted. The 1000 emits light from the side to emit light at an oblique angle to thelaser device 400, so as to achieve the purpose of precisely controlling the light-emitting direction. In this embodiment, the interval period of the light-emittinggrating 430 is, for example, 0.1 μm-10 μm, and the light-emitting angle θ is, for example, 0 degrees. -60 degrees. In this embodiment, for thelaser device 400 having themesa structure 419, the light emitting area corresponding to themesa structure 419 may be located in one of the two sides of thelaser device 400 in the horizontal direction, or may be located in the middle area of thelaser device 400 in the horizontal direction, The exit grating 430 can be formed on the surface of themesa structure 419 corresponding to the light exit area to form the surface exit grating 430 . Specifically, according to the different materials used for preparing the surface exit grating 430, the following methods can be used to obtain the surface exit grating 430: If the material for preparing the surface exit grating 430 is a metal material, metal deposition and photolithography techniques can be used to form the surface The exit grating 430; if the material for preparing the surface exit grating 430 is a semiconductor material, the surface exit grating 430 can be formed by etching the P-type semiconductor layer 415; if the material for preparing the surface exit grating 430 is a dielectric, such as silicon nitride (SiN_x ) or silicon dioxide (SiO₂ ), the surface exit grating 430 may be formed by chemical vapor deposition or atomic layer deposition and photolithography.

请一并参阅图19至图23所示，在一些实施例中，在步骤S2中，在出光区域与外界环境相接的出射面上还可以设有光学元件或光学结构421，其中光学元件可以为棱镜、漫射器、折射光学元件或衍射光学元件等其中一种，光学结构421例如可以为光扩散结构。所述光学元件或光学结构421对出射的激光束起到整形的作用，即改变出射激光束的强度分布为所需的强度分布，同时调整出射激光束的相位分布从而控制出射激光束的传播路径。具体的，可以通过在电子设备外加独立的光学元件而实现，也可以通过化学气相沉积或者原子层沉积和灰度光刻（grey-scale lithography）或者纳米压印（nano-imprint）的方法等将光学元件或光学结构421集成在激光装置400上。Please refer to FIG. 19 to FIG. 23 together. In some embodiments, in step S2, an optical element or anoptical structure 421 may be provided on the outgoing surface where the light outgoing area is connected to the external environment, wherein the optical element may be Theoptical structure 421 may be, for example, a light diffusing structure, which is one of a prism, a diffuser, a refractive optical element or a diffractive optical element. The optical element oroptical structure 421 plays a role in shaping the outgoing laser beam, that is, changing the intensity distribution of the outgoing laser beam to a desired intensity distribution, and adjusting the phase distribution of the outgoing laser beam to control the propagation path of the outgoing laser beam . Specifically, it can be realized by adding an independent optical element to the electronic device, or it can be realized by chemical vapor deposition or atomic layer deposition and gray-scale lithography (grey-scale lithography) or nano-imprint (nano-imprint) methods, etc. Optical elements oroptical structures 421 are integrated on thelaser device 400 .

以上公开的本发明选实施例只是用于帮助阐述本发明。优选实施例并没有详尽叙述所有的细节，也不限制该发明仅为所述的具体实施方式。显然，根据本说明书的内容，可作很多的修改和变化。本说明书选取并具体描述这些实施例，是为了更好地解释本发明的原理和实际应用，从而使所属技术领域技术人员能很好地理解和利用本发明。本发明仅受权利要求书及其全部范围和等效物的限制。The above-disclosed selected embodiments of the present invention are provided only to help illustrate the present invention. The preferred embodiments do not exhaust all the details, nor do they limit the invention to only the described embodiments. Obviously, many modifications and variations are possible in light of the content of this specification. The present specification selects and specifically describes these embodiments in order to better explain the principles and practical applications of the present invention, so that those skilled in the art can well understand and utilize the present invention. The present invention is to be limited only by the claims and their full scope and equivalents.

Claims (10)

Translated fromChinese

1.一种激光装置，其特征在于，其包括：1. A laser device, characterized in that it comprises:激光芯片，其上设有出光区域；A laser chip with a light-emitting area on it;耦合光栅，其设置在所述激光芯片上，且位于所述出光区域的至少一侧；a coupling grating, which is arranged on the laser chip and is located on at least one side of the light emitting area;出射光栅，其设置在所述出光区域中，用于调整入射光波的出射角度。The exit grating, which is arranged in the light exit area, is used to adjust the exit angle of the incident light wave.2.根据权利要求1所述一种激光装置，其特征在于，所述激光芯片具有脊形波导结构。2 . The laser device according to claim 1 , wherein the laser chip has a ridge waveguide structure. 3 .3.根据权利要求2所述一种激光装置，其特征在于，当所述激光芯片具有所述脊形波导结构时，所述出射光栅形成于所述脊形波导结构上。3 . The laser device according to claim 2 , wherein when the laser chip has the ridge waveguide structure, the exit grating is formed on the ridge waveguide structure. 4 .4.根据权利要求2所述一种激光装置，其特征在于，当所述激光芯片具有所述脊形波导结构时，所述出射光栅形成于所述激光芯片内。4 . The laser device according to claim 2 , wherein when the laser chip has the ridge waveguide structure, the exit grating is formed in the laser chip. 5 .5.根据权利要求2所述一种激光装置，其特征在于，所述耦合光栅与所述出射光栅并排设置。5 . The laser device according to claim 2 , wherein the coupling grating and the exit grating are arranged side by side. 6 .6.根据权利要求1所述一种激光装置，其特征在于，所述激光芯片具有台面结构。6 . The laser device according to claim 1 , wherein the laser chip has a mesa structure. 7 .7.根据权利要求6所述一种激光装置，其特征在于，当所述激光芯片具有台面结构时，出射光栅形成于所述台面结构上。7 . The laser device according to claim 6 , wherein when the laser chip has a mesa structure, an exit grating is formed on the mesa structure. 8 .8.根据权利要求1所述一种激光装置，其特征在于，所述出射光栅的间距周期为0.1μm-10μm。8 . The laser device according to claim 1 , wherein a pitch period of the exit grating is 0.1 μm-10 μm. 9 .9.一种激光装置的制备方法，其特征在于，其包括：9. A preparation method of a laser device, characterized in that it comprises:制备激光芯片，在所述激光芯片上形成出光区域；preparing a laser chip, and forming a light-emitting area on the laser chip;在所述出光区域形成出射光栅，用于调整入射光波的出射角度。An exit grating is formed in the light exit area to adjust the exit angle of the incident light wave.10.一种电子设备，其特征在于，其包括：10. An electronic device, characterized in that it comprises:壳体，其上设有一敞口；a shell, which is provided with an opening;透光屏，其安装在所述壳体的敞口上，与所述壳体形成一容纳腔；a light-transmitting screen, which is installed on the opening of the casing and forms an accommodating cavity with the casing;多个激光装置，设置在所述容纳腔内且并排放置，每个所述激光装置上设有开关，每个所述激光装置包括：A plurality of laser devices are arranged in the accommodating cavity and placed side by side, each of the laser devices is provided with a switch, and each of the laser devices includes:激光芯片，其上设有出光区域，所述出光区域面向所述透光屏；a laser chip, which is provided with a light-emitting area, and the light-emitting area faces the light-transmitting screen;耦合光栅，其设置在所述激光芯片上，且位于所述出光区域的至少一侧；a coupling grating, which is arranged on the laser chip and is located on at least one side of the light emitting area;出射光栅，其设置在所述出光区域中，用于调整出射光线的出射角度；an exit grating, which is arranged in the light exit area and is used to adjust the exit angle of the exit light;控制系统，其与所述多个激光装置的开关连接，通过控制每个所述激光装置上的开关相继地打开和关闭使所述多个激光装置的发射场覆盖所需视场；a control system, which is connected to the switches of the plurality of laser devices, and enables the emission fields of the plurality of laser devices to cover the desired field of view by controlling the switches on each of the laser devices to turn on and off successively;光接收装置，其设置在所述容纳腔内，用于接收所述所需视场反馈的光信号。A light receiving device, which is arranged in the accommodating cavity, is used for receiving the light signal fed back by the desired field of view.

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