CN110994993B - Multichannel bidirectional buck-boost circuit - Google Patents
Multichannel bidirectional buck-boost circuitDownload PDFInfo
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- CN110994993B CN110994993BCN201911391812.2ACN201911391812ACN110994993BCN 110994993 BCN110994993 BCN 110994993BCN 201911391812 ACN201911391812 ACN 201911391812ACN 110994993 BCN110994993 BCN 110994993B
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- 239000004065semiconductorSubstances0.000claimsabstractdescription135
- 238000004146energy storageMethods0.000claimsabstractdescription20
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- 239000003990capacitorSubstances0.000claimsdescription3
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of DC power input into DC power output
- H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
- H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
- H02M3/10—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
- H02M3/158—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
- H02M3/1582—Buck-boost converters
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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- Power Engineering (AREA)
- Dc-Dc Converters (AREA)
Abstract
Description
Technical Field
The invention relates to the technical field of integrated circuits, in particular to a multi-channel bidirectional buck-boost circuit.
Background
If a traditional MOSFET or IGBT is used, the multichannel buck-boost conversion circuit has the defects of complex circuit design and high power consumption.
Disclosure of Invention
In view of this, embodiments of the present invention provide a multi-channel bidirectional buck-boost circuit, so as to provide a multi-channel bidirectional buck-boost circuit with simple structure and low power consumption.
In order to achieve the above purpose, the embodiments of the present invention provide the following technical solutions:
a multi-channel bi-directional buck-boost circuit comprising:
a direct current power supply;
a first wide bandgap semiconductor bidirectional switch, a first end of the first wide bandgap semiconductor bidirectional switch being connected to a positive output terminal of the dc power supply;
the first end of the inductor is connected with the second end of the first wide bandgap semiconductor bidirectional switch, and the first end of the inductor is connected with a high-voltage bus node of the multi-channel bidirectional buck-boost circuit;
a second wide bandgap semiconductor bidirectional switch, a first end of the second wide bandgap semiconductor bidirectional switch being connected to a second end of the inductor;
the first end of the energy storage device is connected with the second end of the second wide bandgap semiconductor bidirectional switch, and the second end of the energy storage device is connected with the negative output end of the direct-current power supply;
the filtering energy storage element is connected with the energy storage device in parallel;
the first end of the first path branch circuit is connected with the negative output end of the direct-current power supply, and the second end of the first path branch circuit is connected with the second end of the first wide-bandgap semiconductor bidirectional switch;
and the second semiconductor element is a semiconductor element with a function of unidirectional conduction from a first end to a second end or a circuit formed by the semiconductor element, the first end of the second path branch is connected with the negative output end of the direct-current power supply, and the second end of the second path branch is connected with the second end of the inductor.
Optionally, in the multi-channel bidirectional buck-boost circuit, the method further includes:
the high-voltage bus branch is arranged between the first end of the inductor and the high-voltage bus node;
the high-voltage bus branch circuit at least comprises a third wide bandgap semiconductor bidirectional switch, the second end of the third wide bandgap semiconductor bidirectional switch is connected with the second end of the first wide bandgap semiconductor bidirectional switch, and the first end of the third wide bandgap semiconductor bidirectional switch is used as the high-voltage bus output end of the multi-channel bidirectional buck-boost circuit.
Optionally, in the above multi-channel bidirectional buck-boost circuit, the high-voltage bus branch further includes:
and a first end of the fourth wide bandgap semiconductor bidirectional switch is connected with the third wide bandgap semiconductor bidirectional switch, and a second end of the fourth wide bandgap semiconductor bidirectional switch is connected with the second end of the inductor.
Optionally, in the multi-channel bidirectional buck-boost circuit, the following are included:
the first and/or second path branches are diodes.
Optionally, in the multi-channel bidirectional buck-boost circuit, the following are included:
the first path branch and/or the second path branch are diodes and are MOSFET or IGBT one-way switches.
Optionally, in the multi-channel bidirectional buck-boost circuit, the following are included:
the number of the high-voltage bus branches is not less than 2.
Optionally, in the multi-channel bidirectional buck-boost circuit,
the first path branch and/or the second path branch are/is a diode which is a MOSFET or IGBT one-way switch, and the method further comprises the following steps:
a controller for controlling the multi-channel bi-directional buck-boost circuit to switch between:
a first operating mode: the first wide bandgap semiconductor bidirectional switch is turned on, the second wide bandgap semiconductor bidirectional switch is turned on, the third wide bandgap semiconductor bidirectional switch is turned off, the fourth wide bandgap semiconductor bidirectional switch is turned off, the MOSFET or IGBT unidirectional switch as the first path branch is turned on, and the MOSFET or IGBT unidirectional switch as the second path branch is turned off;
a second working mode: the first wide bandgap semiconductor bidirectional switch is turned on, the second wide bandgap semiconductor bidirectional switch is turned on, the third wide bandgap semiconductor bidirectional switch is turned off, the fourth wide bandgap semiconductor bidirectional switch is turned off, the MOSFET or IGBT unidirectional switch as the first path branch is turned off, and the MOSFET or IGBT unidirectional switch as the second path branch is turned on;
the third working mode is as follows: the first wide bandgap semiconductor bidirectional switch is turned on, the second wide bandgap semiconductor bidirectional switch is turned off, the third wide bandgap semiconductor bidirectional switch is turned off, the fourth wide bandgap semiconductor bidirectional switch is turned on, the MOSFET or IGBT unidirectional switch as the first path branch is turned on, and the MOSFET or IGBT unidirectional switch as the second path branch is turned off;
the fourth working mode: the first wide bandgap semiconductor bidirectional switch is turned on, the second wide bandgap semiconductor bidirectional switch is turned off, the third wide bandgap semiconductor bidirectional switch is turned off, the fourth wide bandgap semiconductor bidirectional switch is turned on, the MOSFET or IGBT unidirectional switch as the first path branch is turned off, and the MOSFET or IGBT unidirectional switch as the second path branch is turned on;
a fifth working mode: the first wide bandgap semiconductor bidirectional switch is turned off, the second wide bandgap semiconductor bidirectional switch is turned on, the third wide bandgap semiconductor bidirectional switch is turned on, the fourth wide bandgap semiconductor bidirectional switch is turned off, the MOSFET or IGBT unidirectional switch as the first path branch is turned on, and the MOSFET or IGBT unidirectional switch as the second path branch is turned off;
a sixth operating mode: the first wide bandgap semiconductor bidirectional switch is turned off, the second wide bandgap semiconductor bidirectional switch is turned on, the third wide bandgap semiconductor bidirectional switch is turned on, the fourth wide bandgap semiconductor bidirectional switch is turned off, the MOSFET or IGBT unidirectional switch as the first path branch is turned off, and the MOSFET as the second path branch is turned on. Optionally, in the multi-channel bidirectional buck-boost circuit, the DC power supply is a DC power supply.
Optionally, in the multi-channel bidirectional buck-boost circuit, the filtering energy storage element is a capacitor.
Based on the above technical solution, in the above solutions provided in the embodiments of the present invention, by controlling the gate driving timing sequence of each wide bandgap semiconductor bidirectional switch, the free transfer of electric energy between multiple channels is realized, that is, at different times, a power supply may become a load that receives electric energy, and the load may also become a power supply, for example: the energy storage equipment is used as a load when charging, and is used as a power supply when discharging, and the scheme controls the circuit by adopting the wide bandgap semiconductor bidirectional switch, so that compared with a mode of controlling a MOSFET or an IGBT in the prior art, the circuit is simple in structure and lower in total power consumption.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a multi-channel bidirectional buck-boost circuit according to an embodiment of the present disclosure;
fig. 2 is a schematic structural diagram of a multi-channel bidirectional buck-boost circuit according to another embodiment of the present application;
fig. 3 is a schematic structural diagram of a multi-channel bidirectional buck-boost circuit according to another embodiment of the present application;
fig. 4 is a schematic structural diagram of a multi-channel bidirectional buck-boost circuit according to another embodiment of the present application;
fig. 5 is a schematic structural diagram of a multi-channel bidirectional buck-boost circuit according to another embodiment of the present application;
fig. 6 is a schematic structural diagram of a multi-channel bidirectional buck-boost circuit according to another embodiment of the present application;
fig. 7 is a schematic structural diagram of a multi-channel bidirectional buck-boost circuit according to another embodiment of the present application.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Aiming at the problems that in the prior art, a multichannel buck-boost conversion circuit is complex in design and low in working efficiency, the application discloses a multichannel bidirectional buck-boost circuit, which is shown in figure 1 and comprises:
the type of the directcurrent power supply 01 can be selected according to the requirements of users, for example, the directcurrent power supply 01 can be an AC-DC or DC-DC direct current power supply;
a first wide bandgap semiconductor bidirectional switch S1, a first end of the first wide bandgap semiconductor bidirectional switch being connected to a positive output end of the dc power supply, in the technical solution disclosed in the embodiment of the present application;
an inductor L1, a first end of the inductor being connected to a second end of the first wide bandgap semiconductor bidirectional switch, a first end of the inductor being connected to a high voltage bus node of the multi-channel bidirectional buck-boost circuit;
a second wide bandgap semiconductor bidirectional switch S2, a first end of the second wide bandgap semiconductor bidirectional switch being connected to the second end of the inductor;
the first end of the energy storage device is connected with the second end of the second wide bandgap semiconductor bidirectional switch, and the second end of the energy storage device is connected with the negative output end of the direct current power supply;
a filtering energy storage element C1 connected in parallel with the energy storage device, wherein the type of the filtering energy storage element C1 can be selected by a user according to the user's requirement, and can be a capacitor, for example;
a first path branch M1, in which the first semiconductor element is a semiconductor element or a circuit formed by semiconductor elements having a function of unidirectional conduction from a first end to a second end, the first end of the first path branch is connected to the negative output end of the dc power supply, and the second end of the first path branch is connected to the second end of the first wide bandgap semiconductor bidirectional switch;
and a second path branch M2, where the second semiconductor element is a semiconductor element or a circuit formed by semiconductor elements having a function of conducting from a first end to a second end in a single direction, the first end of the second path branch is connected to the negative output end of the dc power supply, and the second end of the second path branch is connected to the second end of the inductor.
As can be seen from the above circuit, in the above scheme, the gate driving timing sequence of each wide bandgap semiconductor bidirectional switch can be controlled to realize the free transfer of electric energy between multiple channels, that is, at different times, the power supply may become a load receiving electric energy, and the load may also become a power supply, for example: the energy storage equipment is used as a load when charging, and is used as a power supply when discharging, and the scheme controls the circuit by adopting the wide bandgap semiconductor bidirectional switch, so that compared with a mode of controlling a MOSFET or an IGBT in the prior art, the circuit is simple in structure and lower in total power consumption.
In the above scheme, when the high-voltage bus node is used only as a load, the high-voltage bus node may be directly connected to the first end of the inductor L1 through a wire, and at this time, the high-voltage bus node may receive boost or buck power from an energy storage device, and at the same time, may also receive an unmodulated floating voltage from the dc power supply. Or, in the above scheme, the method further includes: a highvoltage bus branch 02, the highvoltage bus branch 02 being disposed between the first end of the inductor and the high voltage bus node; the high-voltage bus branch at least comprises a third wide bandgap semiconductor bidirectional switch, the second end of the third wide bandgap semiconductor bidirectional switch S3 is connected with the second end of the first wide bandgap semiconductor bidirectional switch, and the first end of the third wide bandgap semiconductor bidirectional switch is used as the high-voltage bus output end of the multi-channel bidirectional buck-boost circuit. At this time, the high-voltage bus node is used as a pure load, and at this time, the high-voltage bus node can only obtain the electric energy provided by the energy storage device.
Further, in the technical solution disclosed in the above embodiment of the present application, when the high-voltage bus node can be switched between a load and a power supply, in the above solution, the high-voltage bus branch further includes:
and a fourth wide bandgap semiconductor bidirectional switch S4, a first end of the fourth wide bandgap semiconductor bidirectional switch being connected to the third wide bandgap semiconductor bidirectional switch, and a second end of the fourth wide bandgap semiconductor bidirectional switch being connected to the second end of the inductor, at this time, by controlling states of the third wide bandgap semiconductor bidirectional switch and the fourth wide bandgap semiconductor bidirectional switch, input and output of an electrical signal to and from the high-voltage bus node can be realized, and therefore, at this time, the high-voltage bus node can be switched between a load and a power supply.
In the technical solution disclosed in the above embodiment of the present application, the specific type of the first path branch and/or the second path branch may be selected according to the user's requirement, for example, referring to fig. 5, the first path branch and/or the second path branch are diodes, or the first path branch and/or the second path branch are diodes, which are MOSFETs or IGBTs, and considering the operating efficiency of the circuit, referring to fig. 6, in the technical solution disclosed in the embodiment of the present application, the first path branch and the second path branch are preferably MOSFETs.
Further, in the technical solutions disclosed in the above embodiments of the present application, the number of the high-voltage bus branches may be selected according to user requirements, for example, see fig. 7, which may be a positive integer not less than 2, the structures of the high-voltage bus branches may be the same or different, and each high-voltage bus branch may select the structural form of the high-voltage bus branch described in any one embodiment of the present application.
When the first path branch and/or the second path branch are/is a MOSFET or an IGBT unidirectional switch, the controller may control the multichannel bidirectional buck-boost circuit to switch between preset modes, for example, in the technical solution disclosed in the embodiment of the present application, the controller may switch the multichannel bidirectional buck-boost circuit between a first working mode, a second working mode, a third working mode, a fourth working mode, a fifth working mode, and a sixth working mode, where:
a first operating mode: in the scheme, the switching tube is turned on, that is, in a state that the switching tube is switched between on and off according to a set duty ratio under a preset PWM signal, the second wide bandgap semiconductor bidirectional switch is turned on, the third wide bandgap semiconductor bidirectional switch is turned off, the fourth wide bandgap semiconductor bidirectional switch is turned off, the MOSFET or IGBT unidirectional switch serving as the first path branch is turned on, and the MOSFET or IGBT unidirectional switch serving as the second path branch is turned off;
a second working mode: the first wide bandgap semiconductor bidirectional switch is turned on, the second wide bandgap semiconductor bidirectional switch is turned on, the third wide bandgap semiconductor bidirectional switch is turned off, the fourth wide bandgap semiconductor bidirectional switch is turned off, the MOSFET or IGBT unidirectional switch as the first path branch is turned off, and the MOSFET or IGBT unidirectional switch as the second path branch is turned on;
the third working mode is as follows: the first wide bandgap semiconductor bidirectional switch is turned on, the second wide bandgap semiconductor bidirectional switch is turned off, the third wide bandgap semiconductor bidirectional switch is turned off, the fourth wide bandgap semiconductor bidirectional switch is turned on, the MOSFET or IGBT unidirectional switch as the first path branch is turned on, and the MOSFET or IGBT unidirectional switch as the second path branch is turned off;
the fourth working mode: the first wide bandgap semiconductor bidirectional switch is turned on, the second wide bandgap semiconductor bidirectional switch is turned off, the third wide bandgap semiconductor bidirectional switch is turned off, the fourth wide bandgap semiconductor bidirectional switch is turned on, the MOSFET or IGBT unidirectional switch as the first path branch is turned off, and the MOSFET or IGBT unidirectional switch as the second path branch is turned on;
a fifth working mode: the first wide bandgap semiconductor bidirectional switch is turned off, the second wide bandgap semiconductor bidirectional switch is turned on, the third wide bandgap semiconductor bidirectional switch is turned on, the fourth wide bandgap semiconductor bidirectional switch is turned off, the MOSFET or IGBT unidirectional switch as the first path branch is turned on, and the MOSFET or IGBT unidirectional switch as the second path branch is turned off;
a sixth operating mode: the first wide bandgap semiconductor bidirectional switch is turned off, the second wide bandgap semiconductor bidirectional switch is turned on, the third wide bandgap semiconductor bidirectional switch is turned on, the fourth wide bandgap semiconductor bidirectional switch is turned off, the MOSFET or IGBT unidirectional switch as the first path branch is turned off, and the MOSFET as the second path branch is turned on.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other. The device disclosed by the embodiment corresponds to the method disclosed by the embodiment, so that the description is simple, and the relevant points can be referred to the method part for description.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (7)
1. A multi-channel bi-directional buck-boost circuit, comprising:
a direct current power supply;
a first wide bandgap semiconductor bidirectional switch, a first end of the first wide bandgap semiconductor bidirectional switch being connected to a positive output terminal of the dc power supply;
the first end of the inductor is connected with the second end of the first wide bandgap semiconductor bidirectional switch, and the first end of the inductor is connected with a high-voltage bus node of the multi-channel bidirectional buck-boost circuit;
a second wide bandgap semiconductor bidirectional switch, a first end of the second wide bandgap semiconductor bidirectional switch being connected to a second end of the inductor;
the first end of the energy storage device is connected with the second end of the second wide bandgap semiconductor bidirectional switch, and the second end of the energy storage device is connected with the negative output end of the direct-current power supply;
the filtering energy storage element is connected with the energy storage device in parallel;
the first path branch circuit is a semiconductor element with a function of unidirectional conduction from a first end to a second end or a circuit formed by the semiconductor element, the first end of the first path branch circuit is connected with the negative output end of the direct-current power supply, and the second end of the first path branch circuit is connected with the second end of the first wide bandgap semiconductor bidirectional switch;
the second path branch is a semiconductor element with a function of conducting from a first end to a second end in a one-way mode or a circuit formed by the semiconductor element, the first end of the second path branch is connected with the negative output end of the direct-current power supply, and the second end of the second path branch is connected with the second end of the inductor;
the high-voltage bus branch is arranged between the first end of the inductor and the high-voltage bus node;
the high-voltage bus branch at least comprises a third wide bandgap semiconductor bidirectional switch, the second end of the third wide bandgap semiconductor bidirectional switch is connected with the second end of the first wide bandgap semiconductor bidirectional switch, and the first end of the third wide bandgap semiconductor bidirectional switch is used as the high-voltage bus output end of the multi-channel bidirectional buck-boost circuit;
the high-voltage bus branch circuit further comprises:
and a first end of the fourth wide bandgap semiconductor bidirectional switch is connected with the third wide bandgap semiconductor bidirectional switch, and a second end of the fourth wide bandgap semiconductor bidirectional switch is connected with the second end of the inductor.
2. The multi-channel bi-directional buck-boost circuit of claim 1, comprising:
the first and/or second path branches are diodes.
3. The multi-channel bi-directional buck-boost circuit of claim 1, comprising:
the first path branch and/or the second path branch are diodes and are MOSFET or IGBT one-way switches.
4. The multi-channel bi-directional buck-boost circuit of claim 1, comprising:
the number of the high-voltage bus branches is not less than 2.
5. The multi-channel bi-directional buck-boost circuit of claim 1, wherein the first and/or second path branches are diodes that are MOSFET or IGBT unidirectional switches, further comprising:
a controller for controlling the multi-channel bi-directional buck-boost circuit to switch between:
a first operating mode: the first wide bandgap semiconductor bidirectional switch is turned on, the second wide bandgap semiconductor bidirectional switch is turned on, the third wide bandgap semiconductor bidirectional switch is turned off, the fourth wide bandgap semiconductor bidirectional switch is turned off, the MOSFET or IGBT unidirectional switch as the first path branch is turned on, and the MOSFET or IGBT unidirectional switch as the second path branch is turned off;
a second working mode: the first wide bandgap semiconductor bidirectional switch is turned on, the second wide bandgap semiconductor bidirectional switch is turned on, the third wide bandgap semiconductor bidirectional switch is turned off, the fourth wide bandgap semiconductor bidirectional switch is turned off, the MOSFET or IGBT unidirectional switch as the first path branch is turned off, and the MOSFET or IGBT unidirectional switch as the second path branch is turned on;
the third working mode is as follows: the first wide bandgap semiconductor bidirectional switch is turned on, the second wide bandgap semiconductor bidirectional switch is turned off, the third wide bandgap semiconductor bidirectional switch is turned off, the fourth wide bandgap semiconductor bidirectional switch is turned on, the MOSFET or IGBT unidirectional switch as the first path branch is turned on, and the MOSFET or IGBT unidirectional switch as the second path branch is turned off;
the fourth working mode: the first wide bandgap semiconductor bidirectional switch is turned on, the second wide bandgap semiconductor bidirectional switch is turned off, the third wide bandgap semiconductor bidirectional switch is turned off, the fourth wide bandgap semiconductor bidirectional switch is turned on, the MOSFET or IGBT unidirectional switch as the first path branch is turned off, and the MOSFET or IGBT unidirectional switch as the second path branch is turned on;
a fifth working mode: the first wide bandgap semiconductor bidirectional switch is turned off, the second wide bandgap semiconductor bidirectional switch is turned on, the third wide bandgap semiconductor bidirectional switch is turned on, the fourth wide bandgap semiconductor bidirectional switch is turned off, the MOSFET or IGBT unidirectional switch as the first path branch is turned on, and the MOSFET or IGBT unidirectional switch as the second path branch is turned off;
a sixth operating mode: the first wide bandgap semiconductor bidirectional switch is turned off, the second wide bandgap semiconductor bidirectional switch is turned on, the third wide bandgap semiconductor bidirectional switch is turned on, the fourth wide bandgap semiconductor bidirectional switch is turned off, the MOSFET or IGBT unidirectional switch as the first path branch is turned off, and the MOSFET as the second path branch is turned on.
6. The multi-channel bi-directional buck-boost circuit of claim 1, wherein said DC power supply is a DC power supply.
7. The multi-channel bi-directional buck-boost circuit of claim 1, wherein said filter energy storage element is a capacitor.
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| CN201911391812.2ACN110994993B (en) | 2019-12-30 | 2019-12-30 | Multichannel bidirectional buck-boost circuit |
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| CN103009989A (en)* | 2012-12-14 | 2013-04-03 | 东南大学 | Mixed current source type energy transmitting and driving equipment |
| CN204993064U (en)* | 2015-06-29 | 2016-01-20 | 江苏同芯电气科技有限公司 | Take coupling inductance's high -power two -way DCDC converter of buck -Boost type |
| CN106712507A (en)* | 2017-02-27 | 2017-05-24 | 青岛海启星自动化科技股份有限公司 | Buck-boost DC-DC convertor with switch-coupling inductor |
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