Disclosure of Invention
An object of the present invention is to provide a support structure, a support, a coating apparatus and applications, wherein the support structure can be used as an electrode and can also support a workpiece to be coated.
Another object of the present invention is to provide a supporting structure, a support, a coating apparatus and applications thereof, wherein the supporting structure can be arranged in multiple layers in the height direction to accommodate more workpieces to be coated.
Another object of the present invention is to provide a supporting structure, a bracket, a coating apparatus and applications thereof, wherein the supporting structure can support the workpiece to be coated in a fixed position, so as to facilitate to maintain the workpiece to be coated in a stable position.
It is another object of the present invention to provide a support structure, a holder, a coating apparatus and applications, wherein the support structure can function to guide a source gas while functioning to support.
According to one aspect of the present invention, there is provided a support structure for use in a coating apparatus for supporting at least one workpiece to be coated, wherein the coating apparatus comprises a reaction chamber and a support structure having a reaction chamber, wherein the support structure is received in the reaction chamber and supported by the reaction chamber, and the support structure is conductively connected to a discharge device of the coating apparatus for discharging as an electrode.
According to an embodiment of the present invention, the support structure comprises a plate body, wherein the plate body is received in the reaction chamber.
According to an embodiment of the invention, the support structure comprises a plurality of supports and a plurality of air vents, wherein the plurality of supports are staggered with respect to each other and form the plurality of air vents.
According to an embodiment of the present invention, the support structure includes a plate body, a plurality of supports, and a plurality of vents, wherein the plurality of supports and the plate body are staggered to form the vents.
According to an embodiment of the present invention, the plate body has a plurality of air vents, wherein the air vents are formed by punching or are formed in the process of integrally molding the plate body.
According to an embodiment of the present invention, the plate body forms at least one gas transmission channel, wherein the gas transmission channel is communicated with the vent to transmit gas to the vent.
According to an embodiment of the present invention, the support structure includes a first support portion and a second support portion, wherein the first support portion is insulatively supported on the second support portion, and the vent is formed on the second support portion.
According to an embodiment of the invention, the distance between the air vents is 60-90 mm.
According to an embodiment of the present invention, the size of the vent is in a range of 0.5mm to 3 mm.
According to another aspect of the present invention, there is provided a rack for a coating apparatus for supporting at least one workpiece to be coated, wherein the coating apparatus includes a reaction chamber and the reaction chamber has a reaction chamber, the rack is accommodated in the reaction chamber, wherein the rack includes:
a plurality of support structures; and
at least one connecting piece, wherein the connecting piece supports the supporting structure in the reaction cavity of the coating equipment, the supporting structure is held in the connecting piece layer by layer at intervals, and the supporting structure is conductively connected to a discharge device of the coating equipment to be used as an electrode for discharging.
According to another aspect of the present invention, there is provided a coating apparatus for coating at least one workpiece to be coated, wherein the coating apparatus comprises:
a reaction chamber, wherein the reaction chamber is provided with a reaction chamber;
a discharge device, wherein the discharge device is used for providing an electric field for the reaction chamber;
a gas supply part for supplying a gas to the reaction chamber; and
a support, wherein the support is held in the reaction chamber, the support comprises a plurality of support structures and at least one connecting member, wherein the connecting member supports the support structures in the reaction chamber of the coating equipment, the support structures are held in the connecting member layer by layer at intervals, the support structures are conductively connected to a discharge device of the coating equipment to be used as electrode discharge, and the coated workpiece is supported in the support and coated in the reaction chamber in a chemical vapor deposition manner.
According to another aspect of the present invention, there is provided a method of operating a stent, comprising the steps of:
at least one layer of supporting structure of a bracket is conducted with a pulse power supply to discharge around at least one workpiece to be coated to form a pulse electric field, wherein the supporting part is used as a cathode of the pulse electric field; and
gas is diffused through the vent of the support structure.
Detailed Description
The following description is presented to disclose the invention so as to enable any person skilled in the art to practice the invention. The preferred embodiments in the following description are given by way of example only, and other obvious variations will occur to those skilled in the art. The basic principles of the invention, as defined in the following description, may be applied to other embodiments, variations, modifications, equivalents, and other technical solutions without departing from the spirit and scope of the invention.
It will be understood by those skilled in the art that in the present disclosure, the terms "longitudinal," "lateral," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like are used in an orientation or positional relationship indicated in the drawings for ease of description and simplicity of description, and do not indicate or imply that the referenced devices or components must be in a particular orientation, constructed and operated in a particular orientation, and thus the above terms are not to be construed as limiting the present invention.
It is understood that the terms "a" and "an" should be interpreted as meaning that a number of one element or element is one in one embodiment, while a number of other elements is one in another embodiment, and the terms "a" and "an" should not be interpreted as limiting the number.
The present invention provides asupport structure 11 and aholder 10, wherein theholder 10 can be placed in acoating apparatus 1 for use, and thecoating apparatus 1 can be used for producing various types of films, such as DLC films.
Thecoating equipment 1 can form a film layer on the surface of a workpiece to be coated by chemical deposition by utilizing a plasma enhanced chemical deposition (PECVD) technology. Specifically, the workpiece to be coated is placed in areaction chamber 20 of thecoating apparatus 1 for plasma enhanced chemical vapor deposition to form the film on the surface of the workpiece to be coated.
Plasma Enhanced Chemical Vapor Deposition (PECVD) processes have many advantages over other existing deposition processes: (1) the dry type film deposition does not need to use an organic solvent; (2) the plasma acts on the surface of the substrate in an etching way, so that the deposited film has good adhesion with the substrate; (3) the coating can be uniformly deposited on the surface of the irregular matrix, and the gas phase permeability is extremely strong; (4) the coating has good designability, and compared with the micron-scale control precision of a liquid phase method, the chemical vapor phase method can control the thickness of the coating at a nanoscale scale; (5) the coating structure is easy to design, the chemical vapor method uses plasma for activation, a specific initiator is not required to be designed for initiating the composite coatings of different materials, and various raw materials can be compounded together by regulating and controlling input energy; (6) the compactness is good, the chemical vapor deposition method usually activates a plurality of active sites in the plasma initiation process, and is similar to the situation that a plurality of functional groups are arranged on one molecule in the solution reaction, and a cross-linking structure is formed among molecular chains through the plurality of functional groups; (7) as a coating treatment technical means, the coating treatment method has excellent universality, and the selection range of coating objects and raw materials used for coating is wide.
Referring to fig. 1 to 2B and fig. 7, in particular, thesupport 10 includes a plurality of layers of thesupport structure 11, wherein the plurality of layers of thesupport structure 11 are held in areaction chamber 200 of areaction chamber 20 of thecoating apparatus 1.
The workpiece to be coated can be placed in one or more layers in themulti-layer support structure 11 of thesupport 10.
Thesupport 10 includes at least one connectingmember 12, wherein the connectingmember 12 is disposed around thesupport structures 11 for supporting each of thesupport structures 11 at a predetermined height. Theadjacent support structures 11 are kept at a preset distance, so that reactants enter between theadjacent support structures 11 to be deposited on the surface of the workpiece to be coated, which is supported on thesupport structures 11.
In the present embodiment, thesupport structure 11 is rectangular in shape. It will be appreciated by those skilled in the art that the shape of thesupport structure 11 may be, but is not limited to, triangular, circular, or other shapes. Preferably, the shape of the cross section formed by the inner wall of thereaction chamber 20 of the shape of thesupport structure 11 is similar, on the one hand to facilitate the utilization of the space of thereaction chamber 200, and on the other hand to facilitate the equal distance from the periphery of thesupport structure 11 to the inner wall of thereaction chamber 20, so as to facilitate the uniformity of gas diffusion.
In this embodiment, the number of the connectingmembers 12 is four, and the connecting members are respectively located at four corners of the supportingstructure 11 to support the supportingstructure 11. Further, the connectingmember 12 may be implemented as a pillar capable of standing on thereaction chamber 20.
The supportingstructure 11 can support a plurality of workpieces to be coated, and both front and back sides of the workpieces to be coated placed on the supportingstructure 11 can be coated in thecoating apparatus 1.
Specifically, thesupport structure 11 has a plurality ofvents 110 and includes a platemain body 111, wherein the platemain body 111 has a plate top surface and a plate bottom surface, wherein the plate top surface and the plate bottom surface are oppositely disposed, the workpiece to be plated can be placed on the plate top surface, and thevents 110 pass through the plate top surface and the plate bottom surface from top to bottom to penetrate the platemain body 111.
When thesupport structure 11 is supported by theconnection member 12 to be held in thereaction chamber 200 of thereaction chamber 20, the raw material gas may be diffused throughout thesupport 10 through thevent 110 of thesupport structure 11.
Thevent 110 may be formed in theplate body 111 by punching, or theplate body 111 may be formed with thevent 110 in an integral molding process. The position and shape of thevents 110 may be arranged as desired. Thevent 110 can guide the flow of the raw material gas, and thus may affect the final plating effect. The coating effect can be controlled by controlling the number and size of thevents 110.
It is understood that the source gas may be a reactive gas selected based on the film requirements, for example, when the workpiece surface is required to be coated with a DLC film, the reactive gas may be CxHyWherein x is an integer of 1 to 10 and y is an integer of 1 to 20. The reaction gas may be a single gas or a mixed gas. Alternatively, the reaction gas may be methane, ethane, propane, butane, ethylene, acetylene, propylene, or propyne, which is gaseous at normal pressure, or may be vapor formed by evaporation under reduced pressure or heating. That is, the raw material which is liquid at the normal temperature may be supplied to thereaction chamber 200 in a gaseous state through agas supply part 30.
The source gas may be a plasma source gas, and may be, but is not limited to, an inert gas such as, but not limited to, helium or argon, nitrogen, or a fluorocarbon such as, but not limited to, carbon tetrafluoride. The plasma source gas may be a single gas, or may be a mixture of two or more gases.
The source gas may be an assist gas, and the assist gas may cooperate with the reactive gas to form a film layer, so as to impart desired properties to the film layer, such as strength, flexibility, etc. The assist gas may be a non-hydrocarbon gas such as nitrogen, hydrogen, fluorocarbon gas, and the like. The auxiliary gas may be supplied to thereaction chamber 20 simultaneously with the reaction gas, or may be introduced in a sequential order according to the requirement. The addition of the auxiliary gas can adjust the proportion of each element in the film layer and the proportion of carbon-hydrogen bonds, carbon-nitrogen bonds and nitrogen-hydrogen bonds, thereby changing the property of the film layer.
At least a portion of the source gas may be diffused from thevent 110 location of thesupport structure 11. Thevents 110 are positioned and sized in a particular arrangement to facilitate the diffusion of the source gases and the resulting coating effect.
In the present embodiment, the diameter of thevents 110 ranges from about 0.5mm to about 3mm, and the distance betweenadjacent vents 110 may be 60mm to about 90 mm.
The length and width dimensions of thesupport structures 11 may range from 500mm to 600mm, and the spacing betweenadjacent support structures 11 may range from 10mm to 200 mm.
Further, thecoating apparatus 1 includes adischarge device 40, wherein thedischarge device 40 includes apulse power source 41 and a radiofrequency power source 42, wherein thepulse power source 41 is used for providing a pulse electric field, the radiofrequency power source 42 is used for providing a radio frequency electric field, and the radiofrequency power source 42 can be loaded on the electrode plate for generating the radio frequency electric field. Or the radiofrequency power supply 42 is arranged outside the cavity to be used as an inductively coupled plasma power supply so as to provide an alternating magnetic field. Thepulse power supply 41 and therf power supply 42 may be used individually or in combination.
It should be noted that, in the PECVD process, since the energy of therf power source 42 itself is low, the effect of generating plasma by discharging therf power source 42 alone in industrial mass production is not ideal, and as thereaction chamber 20 of thecoating apparatus 1 is enlarged and the number of the works to be coated is increased, the adverse effects of non-uniform coating occur.
Pulsed discharge is also a common way in Plasma Enhanced Chemical Vapor Deposition (PECVD) processes. The pulse discharge energy is higher, and as thereaction cavity 20 of thecoating device 1 is enlarged and the number of the workpieces to be coated is increased, the voltage requirement on thepulse power supply 41 is higher to enhance the processing capacity. However, thepulsed power supply 41 with a high voltage may generate stronger bombardment on the surface of the workpiece to be coated, so that the surface of the workpiece to be coated may be damaged.
In this embodiment, thepulse power source 41 and therf power source 42 can be used simultaneously, so as to increase the energy of the plasma reaching the surface of the workpiece to be coated to obtain a dense film layer on the basis of obtaining a high ionization rate plasma.
Further, theholder 10 is provided with at least one insulatingmember 13, wherein the insulatingmember 13 is made of an insulating material, such as teflon. The insulatingmember 13 is provided at the bottom end of the connectingmember 12. When theentire holder 10 is accommodated in thereaction chamber 20, the insulatingmember 13 may be supported by thereaction chamber 20, so that theholder 10 and thereaction chamber 20 cannot be conducted.
Theentire support 10 is conductively connected to thedischarge device 40 as a cathode, and thereaction chamber 20 may be grounded or conductively connected to thedischarge device 40 as an anode.
For example, theholder 10 may be conductively connected to thepulse power source 41 of thedischarge device 40 to serve as a cathode of thepulse power source 41, at least a portion of thereaction chamber 20 may be conductively connected to thepulse power source 41 of thedischarge device 40 to serve as an anode of thepulse power source 41, and thereaction chamber 20 may be grounded.
Therf power source 42 may be independent of thestent 10 or at least one of thesupport structures 11 of thestent 10 may be conductively coupled to therf power source 42.
The workpiece to be coated is placed on thesupport structure 11 serving as a cathode, so that positive ions in the plasma can be accelerated to move towards thesupport structure 11 serving as the cathode under the action of an electric field, and a compact film layer is formed on the surface of the workpiece to be coated.
In this process, the raw material gas can be diffused through thevent 110 of thesupport structure 11 at a predetermined position.
Illustratively, the source gas diffuses through thevent 110 of thesupport structure 11 at the second level, and thus enters between thesupport structure 11 at the second level and thesupport structure 11 at the third level. While the source gas between thesupport structure 11 of the second layer and thesupport structure 11 of the third layer may be diffused through thevent 110 of thesupport structure 11 of the third layer or through thevent 110 of thesupport structure 11 of the second layer.
It is noted that the workpiece to be coated has a front side and a back side, wherein the workpiece to be coated is supported by thesupport structure 11 with the front side facing upward. A source gas may be deposited to the back side of the workpiece to be coated through a gap between the workpiece to be coated and thesupport structure 11. Since at least a portion of the back surface of the workpiece to be coated is exposed to thevent 110 of thesupport structure 11, at least a portion of the raw material gas can pass through thevent 110 from top to bottom and then be deposited on the back surface of the workpiece to be coated, thereby enabling simultaneous coating of the front surface and the back surface of the workpiece to be coated.
Further, it is noted that, in the present embodiment, thesupport structure 11 is held at various height positions of thereaction chamber 200 of thereaction chamber 20 by theconnection members 12.
In other embodiments of the present invention, the supportingstructure 11 may be directly mounted to thereaction chamber 20, for example, referring to fig. 8, the supportingstructure 11 may be detachably mounted to thereaction chamber 20, for example, in a snap-fit manner, and thereaction chamber 20 may be provided with a groove. Thesupport structure 11 may be horizontally mounted to thereaction chamber 20, or vertically mounted to thereaction chamber 20.
Further, it should be noted that in the present embodiment, each of the supportingstructures 11 is made of an electrically conductive material, such as a stainless steel material, and at least one of the connectingmembers 12 may also be made of an electrically conductive material. The electricallyconductive support structures 11 are respectively conductively connected to the electrically conductive connectingelements 12, so that eachsupport structure 11 can be conductively connected to the outside by means of the conductive connection of the connectingelement 12 to the outside.
In this way, the cumbersome steps of wiring each of thesupport structures 11 to connect to the outside are eliminated, and the discharge control of thecradle 10 is facilitated.
Referring to fig. 3, another embodiment of thesupport structure 11 according to the present invention is illustrated. In the present embodiment, thesupport structure 11 includes theplate body 111 and a plurality ofsupports 112, wherein theplate body 111 and thesupports 112 are staggered to form thevents 110.
Specifically, theplate body 111 forms a plurality of receivingspaces 1110, wherein the receivingspaces 1110 may be formed by drilling or theplate body 111 forms the receivingspaces 1110 in an integral molding process.
Thesupport member 112 may be located in the receivingspace 1110 and connected to theplate body 111. In detail, the supportingmembers 112 cross theaccommodating space 1110 in a staggered manner, so that the workpiece to be coated can be supported by the supportingmembers 112 and held in theaccommodating space 1110.
Each of theaccommodating spaces 1110 can accommodate at least one workpiece to be coated. By theplate body 111, the adjacent workpieces to be coated can be separated to keep each workpiece to be coated in a relatively independent space.
The raw material gas may pass through theaccommodating space 1110 from top to bottom or from bottom to top, then pass through thevent 110 to diffuse between the layers, and be supported by thesupport 112 so that the workpiece to be coated, which is held in theaccommodating space 1110, can be coated.
Of course, it is understood that the workpiece to be coated may be placed at theplate body 111 position, and thesupport 112 position may serve only as a passage for the raw material gas.
Thesupport 112 may be made of a conductive material, and when the workpiece to be coated is placed on thesupport 112, thesupport 112 may be conductively connected to thedischarge device 40 to serve as a cathode. The platemain body 111 may be made of a conductive material, or may be insulating. When theplate body 111 is made of an insulating material, the electric field around the workpiece to be coated is formed depending on thesupport 112. The platemain body 111 may function as a shield for theadjacent receiving space 1110.
With reference to fig. 4, another embodiment of thesupport structure 11 according to the invention is illustrated. In this embodiment, thesupport structure 11 includes a plurality of thesupports 112, wherein thesupports 112 are staggered to form thevents 110.
The workpiece to be coated is supported by thesupport 112. In this embodiment, thesupport structure 11 is a net structure.
For the workpiece to be coated, the supportingstructure 11 contacting the back surface of the workpiece to be coated is reduced to facilitate the exposure of the back surface of the workpiece to be coated to raw material gas, thereby facilitating the coating of the back surface of the workpiece to be coated.
The weight of theholder 10 can be reduced for theentire holder 10, contributing to weight reduction of theentire plating apparatus 1. It is noted that the lighter weight of therack 10 is clearly more advantageous for this operation when theentire rack 10 is removable from thereaction chamber 200 of thereaction chamber 20.
Further, in other embodiments of the present invention, the three different types of thesupport structures 11 can be alternately arranged according to requirements, for example, the plate structure and the expanded metal structure are alternately arranged, and the expanded metal structure are alternately arranged.
Referring to fig. 5, and also to fig. 7, another embodiment of thestent 10 according to the present invention is illustrated.
In this embodiment, thestand 10 comprises two different types of thesupport structure 11. Specifically, at least one of thesupport structures 11 includes the platemain body 111, and at least one of thesupport structures 11 includes the platemain body 111 and a plurality of thesupports 112. That is, at least one of the plurality ofsupport structures 11 is implemented as a plate structure, and at least one of the plurality ofsupport structures 11 is implemented as a lath structure.
Thesupport structures 11, which are embodied as plate structures and as expanded metal structures, are arranged alternately. For example, thesupport structures 11 of the first layer may be implemented as plate structures, thesupport structures 11 of the second layer may be implemented as plate mesh structures, and thesupport structures 11 of the third layer may be implemented as plate structures.
Theplating apparatus 1 further includes thegas supply section 30, wherein thegas supply section 30 can be used to supply a raw material gas. Thesupport structure 11 may become at least part of thegas supply 30.
Specifically, at least one of thesupport structures 11 has at least onegas delivery channel 1100, wherein thegas delivery channel 1100 is in communication with thevent 110. Thevents 110 may penetrate theplate body 111 so that gas from thegas transmission channel 1100 may diffuse toward the upper and lower sides of thesupport structure 11, respectively. Thevent 110 may also be formed at one side of theplate body 111 so that the gas from thegas transmission channel 1100 may be diffused toward one side of thesupport structure 11.
In this embodiment, thevent 110 is disposed toward thesupport structure 11 of the next level.
Thesupport structure 11, which is provided as a mesh structure, is conductively connected to thepulse power supply 41 of thedischarge device 40 as a cathode of thepulse power supply 41. The workpiece to be coated can be placed on thesupport structure 11, which is embodied as a expanded metal structure.
Thesupport structure 11, which is provided as a plate structure, may be conductively connected to thepulse power source 41 of thedischarge device 40 to serve as an anode of thepulse power source 41. In other embodiments of the present invention, thesupport structure 11, which is configured as a plate structure, may be conductively connected to therf power source 42 of thedischarge device 40 to serve as an anode of therf power source 42. In other embodiments of the invention, thesupport structure 11, which is arranged as a plate structure, may be directly grounded.
When the workpiece to be coated is placed on thesupport structure 11 implemented as a plate mesh structure, thesupport structure 11 implemented as a plate structure is positioned above the workpiece to be coated and a source gas may be diffused from above the workpiece to be coated through thevent 110 positioned above the workpiece to be coated. By way of example, the gas from thesupport structure 11 of the first layer diffuses between thesupport structure 11 of the first layer and thesupport structure 11 of the second layer, and since thesupport structure 11 of the second layer is used as a negative electrode, positive ions in the plasma generated under the action of the electric field can be accelerated towards thesupport structure 11 of the second layer and deposited on the front side of the workpiece to be coated, supported on thesupport structure 11 of the second layer.
It should be noted that, since the workpiece to be coated is supported by thesupport structure 11 implemented as a mesh structure, raw material gas or reaction gas can pass through thevents 110 formed by thestaggered support members 112 of thesupport structure 11, and the coated workpiece is supported by thesupport members 112, so that gas can be distributed on the peripheral side of the workpiece to be coated, which is beneficial for coating the back side of the workpiece to be coated.
Further, in the present embodiment, the number of the connectingmembers 12 is four, the supportingstructures 11 are implemented as rectangular structures and the four connectingmembers 12 are respectively arranged at four corners of each of the supportingstructures 11.
Preferably, each of thesupport structures 11 is arranged identically along the height direction of the connectingmembers 12, for example, the four corners of thesupport structure 11 of the first layer correspond to the four corners of thesupport structure 11 of the second layer. The projections of thesupport structures 11 of each layer in the height direction are located at the same position.
Further, each of thesupport structures 11 as a cathode is respectively conductively connected to one of theconnectors 12, and each of thesupport structures 11 as an anode is respectively conductively connected to the other of theconnectors 12. In this way, each of thesupport structures 11 as a cathode can be conducted to the outside by one of theconnectors 12 and thepulse power source 41. Each of the structures as an anode can be conducted to the outside by thepulse power source 41 through the other of theconnectors 12.
In other embodiments of the present invention, thesupport structure 11 is removed as a cathode, and the rest of thesupport structure 11 can be conducted to the outside through another connection or directly grounded to therf power source 42.
In further embodiments of the present invention, thesupport structures 11 implemented as a lath structure and thesupport structures 11 implemented as a net structure may be alternately arranged.
In further embodiments of the present invention, thesupport structures 11 implemented as plate structures and thesupport structures 11 implemented as mesh structures may be arranged alternately.
Referring to fig. 6A and 6B, and to fig. 1 and 7, another embodiment of thestent 10 according to the present invention is illustrated. In this embodiment, thesupport structure 11 includes afirst support portion 113 and asecond support portion 114, wherein thefirst support portion 113 is supported by thesecond support portion 114, thefirst support portion 113 is used for supporting the workpiece to be coated, and thesecond support portion 114 is used for gas distribution.
Specifically, thefirst support part 113 includes a plurality of thesupporters 112, and thesupporters 112 alternately form thevents 110.
Thesecond support portion 114 includes theplate body 111 and has a plurality of thevents 110, wherein thevents 110 are formed at theplate body 111. Theplate body 111 is formed with at least onegas transmission passage 1100, wherein thegas vent 110 is communicated with thegas transmission passage 1100.
Thevent 110 is formed at thesecond support portion 114 and faces thesupport structure 11 of the next layer. When the workpiece to be coated is placed on thefirst support part 113 of thesupport structure 11, thesecond support part 114 of another layer of thesupport structure 11 is positioned above the workpiece to be coated.
When the gas leaves thesecond support 114 from thegas vent 110, at least a part of the gas can be ionized to form plasma under the action of the rf electric field and/or the pulsed electric field, and then positive ions in the plasma can be accelerated toward thefirst support 113 located below, so as to be deposited on the surface of the workpiece to be coated supported on thefirst support 113 of thesupport structure 11.
Further, thesecond support 114 may be conductively connected to therf power source 42, so that the gas can be ionized at thesecond support 114 and then accelerated toward the workpiece to be coated by thefirst support 113 as a cathode.
In this way, in addition to thesupport structures 11 of the first layer, thesupport structures 11 of each layer can be placed with the workpieces to be coated, so as to facilitate an increased space utilization of thesupport 10.
Further, the first supportingportion 113 of each of the supportingstructures 11 may be conductively connected to one of the connectingmembers 12 so as to be conveniently conducted with the outside, and the second supportingportion 114 of each of the supportingstructures 11 may be conductively connected to another one of the connectingmembers 12 so as to be conveniently conducted with the outside. Meanwhile, the first supportingportion 113 and the second supportingportion 114 of each supportingstructure 11 are insulated from each other.
Further, referring to fig. 7, thecoating apparatus 1 further comprises anair extractor 50, afeeding device 60 and acontrol device 70, wherein theair extractor 50 and thefeeding device 60 are respectively communicably connected to thereaction chamber 20, and theair extractor 50, thefeeding device 60 and the dischargingdevice 40 are respectively controllably connected to thecontrol device 70. Thegas pumping device 50 is used for pumping gas to change the degree of vacuum in thereaction chamber 20. Thecontrol device 70 is used for controlling parameters such as the feeding flow rate, the proportion, the pressure, the discharge magnitude, the discharge frequency and the like in thereaction chamber 20, so that the whole coating process can be controlled.
According to another aspect of the present invention, there is provided a method of operating thestent 10, comprising the steps of:
at least one layer of thesupport structure 11 of thesupport 10 is connected to thepulse power source 41 to discharge around at least one workpiece to be coated to form the pulse electric field, wherein thesupport structure 11 serves as a cathode of the pulse electric field.
According to some embodiments of the present invention, in the above method, thesupport structure 11 and thepulse power source 41 located outside thereaction chamber 20 are conducted through at least one of the pillars supported by thesupport structure 11, wherein thesupport 10 is located in thereaction chamber 20.
According to some embodiments of the present invention, the method of operating thestent 10 further comprises the steps of:
at least one layer of thesupport structure 11 of thestent 10 conducts thepulse power source 41 to serve as an anode of thepulse power source 41, so as to form the pulse electric field between the anode serving as thepulse power source 41 and a cathode serving as thepulse power source 41.
According to some embodiments of the present invention, the method of operating theelectrode holder 10 further comprises the steps of:
at least one layer of thesupport structure 11 of thestent 10 conducts the radiofrequency power source 42 to serve as an anode of the radiofrequency power source 42, so that the radio frequency electric field and the pulse electric field are formed between the anode serving as the radiofrequency power source 42 and the cathode serving as thepulse power source 41.
According to some embodiments of the present invention, the method of operating thestent 10 further comprises the steps of:
releasing gas by at least one layer of saidsupport structure 11; and
the gas is ionized so as to be accelerated toward the coating tool under the action of the cathode of thepulse power supply 41.
It will be appreciated by persons skilled in the art that the embodiments of the invention described above and shown in the drawings are given by way of example only and are not limiting of the invention. The objects of the invention have been fully and effectively accomplished. The functional and structural principles of the present invention have been shown and described in the examples, and any variations or modifications of the embodiments of the present invention may be made without departing from the principles.