CN110957287A - A kind of high-power radiator and preparation method thereof - Google Patents
A kind of high-power radiator and preparation method thereofDownload PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3672—Foil-like cooling fins or heat sinks
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
- H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
- H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
- H01L21/4807—Ceramic parts
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3731—Ceramic materials or glass
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
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Abstract
Translated fromChinese
Description
Technical Field
The invention relates to the field of electronic device preparation, in particular to a high-power radiator and a preparation method thereof.
Background
With the progress of semiconductor technology, semiconductor devices are continuously developed to high power and integration, and the heat dissipation of electronic elements becomes a technical difficulty for keeping the overall performance of the devices stable, which is particularly prominent in the fields of 5G mobile phone chips, LED lighting, automobiles, aerospace and the like. To keep the electronic components cool, heat sinks are used to absorb the heat generated by the components and dissipate it into the surrounding environment. Typically, heat sinks are made primarily of aluminum (or copper), since aluminum is a metallic electrical conductor, and an insulating layer must be provided between it and the electronic component to prevent shorting. In order to ensure the heat dissipation effect of the heat sink on the electronic component, the insulating layer should conduct heat as much as possible. Therefore, the research on the preparation technology of the heat-conducting and insulating coating on the surface of the aluminum or copper and the heat-conducting and insulating mechanism of the heat-conducting and insulating coating has important theoretical significance and wide application prospect. The development and production of the chip heat dissipation plate in China begin in the early 80 s of the 20 th century. In the early 80 s, in order to meet the urgent needs of military industry, chip heat dissipation plates, mainly metal-based insulating heat dissipation plates, were developed and put into mass production, and became the main force for chip heat dissipation plate production in our country at that time. Although the metal-based insulating heat dissipation plate has been known for decades, its application is still in the fields of high power devices, military industry and the like, and only small-scale application is available. The heat dissipation performance level of semiconductors in China is relatively laggard, and the difference is large compared with similar products in foreign countries (America and Japan). The difference mainly shows in many aspects such as design and preparation of the insulating heat conduction layer and ceramic particle filling, so that the product performance of China in the field of semiconductor insulating heat dissipation plates, especially aluminum-based insulating heat dissipation plates has a small difference compared with foreign products.
Disclosure of Invention
The invention aims to provide a high-power radiator and a preparation method thereof, and the high-power radiator has the characteristics of good heat dissipation performance and simple preparation steps.
In order to achieve the purpose, the invention provides the following scheme:
a high power heat sink comprising: the device comprises an aluminum substrate, an oxidation layer, a compact layer and an insulation layer;
the oxide layer grows on the aluminum substrate; the compact layer grows on the oxide layer; the insulating layer is grown on the compact layer;
the oxide layer comprises a plurality of nano particles; the nanoparticles are used to increase the bulk resistance value of the heat sink.
Optionally, the oxide layer is made of aluminum oxide.
Optionally, the insulating layer is a diamond-like carbon coating.
Optionally, the material of the dense layer and the material of the nanoparticles are both a mixture of aluminum oxide and aluminum nitride.
A preparation method of a high-power radiator is provided, and the radiator is prepared by the preparation method; the preparation method comprises the following steps:
oxidizing the aluminum substrate to form an oxide layer; the oxidation layer is of a porous structure;
cleaning the oxide layer by a gas ion source first and then by pulse carbon ion;
introducing oxygen and nitrogen, and depositing a compact layer on the oxide layer while depositing nano particles in the plurality of holes of the cleaned oxide layer; the nano particles and the compact layer are both a mixture of aluminum oxide and aluminum nitride;
and depositing a diamond-like carbon coating film on the compact layer to form an insulating layer.
Optionally, the method further includes:
and depositing a copper film on the insulating layer to form a metal copper layer.
Optionally, oxidizing the aluminum substrate by using a micro-arc oxidation technology to form an oxide layer;
and depositing a compact layer on the oxide layer while depositing the nano particles in the plurality of holes of the cleaned oxide layer by adopting a magnetic filtration cathodic arc deposition technology.
Optionally, a magnetic filtration cathodic arc deposition technology that the cathode is Al, the arc starting current is 40-100A, the ion beam current is 0.1-1A, the oxygen gas inflow is 0-500sccm, and the nitrogen gas inflow is 0-250sccm is adopted, and the dense layer is deposited on the oxide layer while the nano particles are deposited in the plurality of holes of the cleaned oxide layer.
Optionally, the ratio of the transient value of the oxygen intake air amount to the transient value of the nitrogen intake air amount is not lower than 2: 1.
optionally, the thickness of the oxide layer is not less than 25 micrometers.
According to the specific embodiment provided by the invention, the invention discloses the following technical effects: according to the high-power radiator and the preparation method thereof, the oxide layer is directly grown on the aluminum substrate, and the plurality of nano-particles are deposited in the grown oxide layer, so that the volume resistivity of the whole radiator can be improved, and the obtained radiator has good heat-conducting property. And only deposition is needed on the aluminum substrate, so that the whole device preparation process is simpler.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without inventive exercise.
Fig. 1 is a schematic structural diagram of a high-power heat sink according to an embodiment of the present invention;
fig. 2 is a flowchart of a method for manufacturing a high-power heat sink according to an embodiment of the present invention.
Reference numerals: 101 aluminum substrate, 102 nano-particles, 103 oxidation layer, 104 dense layer and 105 insulation layer.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The invention aims to provide a high-power radiator and a preparation method thereof, and the high-power radiator has the characteristics of good heat dissipation performance and simple preparation steps.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in further detail below.
Fig. 1 is a schematic structural diagram of a high power heat sink according to an embodiment of the present invention, and as shown in fig. 1, the high power heat sink includes: analuminum substrate 101, anoxide layer 103, adense layer 104, and aninsulating layer 105.
Theoxide layer 103 is grown on thealuminum substrate 101. Thedense layer 104 is grown on theoxide layer 103. Theinsulating layer 105 is grown on thedense layer 104.
Theoxide layer 103 includes a plurality ofnanoparticles 102 therein. Thenanoparticles 102 serve to increase the bulk resistance value of the heat sink.
Theoxide layer 103 is made of aluminum oxide.
Theinsulating layer 105 is a diamond-like carbon coating (DLC).
The material of thedense layer 104 and the material of thenanoparticles 102 are both a mixture of aluminum oxide and aluminum nitride.
The invention also provides a preparation method of the high-power radiator, which is used for preparing the radiator. As shown in fig. 2, the preparation method comprises:
s201, oxidizing thealuminum substrate 101 to form anoxidation layer 103. Theoxide layer 103 is a porous structure.
The method specifically comprises the following steps: micro-arc oxidation is carried out on thealuminum substrate 101 by utilizing a micro-arc oxidation technology, the power is 0-2KW during oxidation, the processing size is not less than 800mm, and the thickness of the formed aluminum oxide is not less than 25 microns after processing for 40 min.
S202, firstly cleaning theoxide layer 103 by a gas ion source and then cleaning by pulse carbon ions.
The method specifically comprises the following steps: the surface of thealuminum substrate 101 is cleaned and polished by a gas ion source. The ion source is an anode layer gas Hall source, and is heated in the surface gas ion source cleaning process at the heating temperature of not lower than 4000 ℃. Also, the ion source process is performed in two stages. The first stage is 0-600V, the beam current is 2-5A, the treatment is 30min, and then 1200-1800V, the beam current is 0-1A, the treatment is 40 min.
Compared with the traditional treatment technology, the invention uses the step-type surface cleaning, firstly carries out low-voltage and high-current cleaning, quickly removes the loose layer on the surface of the aluminum oxide, and simultaneously can more clearly and obviously wash the holes in the aluminum oxide body through high energy, thus being beneficial to the filling of the subsequent insulatingnano particles 102 and greatly improving the body resistivity of the matrix.
When thealuminum substrate 101 is cleaned by high-power pulse carbon ions, the beam diameter is 800 mm. Compared with the traditional cleaning technology, the peak power of the high-power pulse carbon ion cleaning can be 1MW, the high-power peak value is convenient to realize the thermal peak effect in the cleaning process, local high temperature can be formed in a microcosmic mode to promote the phase transformation of aluminum oxide, and the higher body insulation performance is realized. Meanwhile, under the further bombardment of ions and the ultra-small radius of carbon, the covering deposition of carbon can be easily realized in the porous content, and the insulation coefficient of a carbon film formed by high-power pulse is not less than 1M omega.
S203, introducing oxygen and nitrogen, and depositing thenano particles 102 in the plurality of holes of the cleanedoxide layer 103 and simultaneously depositing thedense layer 104 on theoxide layer 103. Both thenanoparticles 102 and thedense layer 104 are a mixture of aluminum oxide and aluminum nitride.
The method specifically comprises the following steps: based on a magnetic filtration cathodic arc deposition technology, a cathode is Al, an arc starting current is 40-100A, an ion beam current is 0.1-1A, the oxygen air inflow is 0-500sccm, the nitrogen air inflow is 0-250sccm, the oxygen and the nitrogen change sinusoidally along with time, and the transient value ratio of the oxygen to the nitrogen air inflow in a dynamic process is not lower than 2: 1.
compared with the traditional fixed oxygen and nitrogen air inflow ratio, the method adopts sinusoidal air inflow, the air amount changes along with time, a gradient gradual non-obvious transition layer is formed during film forming, the bonding strength of the film layer is good, and the real-time matching circulation nanocrystalline composite film layer with high toughness and high hardness is formed. Meanwhile, the aluminum oxide and aluminum nitride nanocrystals can be conveniently filled into the aluminum oxide formed by micro-arc oxidation in the deposition process, so that the probability of breakdown is greatly reduced.
In addition, the alumina formed by micro-arc oxidation is porous alumina, and the porous alumina has poor insulation performance and large leakage current. Under the supporting action of the framework of the aluminum oxide formed by micro-arc oxidation, the carbon nano-particles 102, the aluminum nitride nano-particles 102 and other substances are adopted for filling, so that the bulk resistance of the device can be obviously improved.
And S204, depositing a diamond-like carbon coating on thecompact layer 104 to form an insulatinglayer 105.
The method specifically comprises the following steps:
the cathode is C, the arc starting current is 40-100A, the ion beam current is 0.1-0.5A, and the thickness of the deposited film layer is 1-5 microns.
Compared with the conventional technology, the insulatinglayer 105 formed by the magnetic filtering cathodic arc deposition technology has high surface insulating property, and the highest surface resistivity can be 107-109 Ω m.
In order to facilitate connection with other electronic components, the preparation method provided by the invention can also deposit a copper film on the insulatinglayer 105 of the high-power heat radiator to form a metal copper layer. The specific forming process comprises the following steps:
the cathode is Cu, the arc starting current is 40-100A, the ion beam current is 0.1-1.5A, and the thickness of the deposited film layer is 1-25 microns.
Compared with the traditional technology, the invention can realize the deposition of ultrathin and ultra-compact copper by the magnetic filtration cathodic arc deposition technology, and the thinnest can reach 3 microns on the premise of ensuring the compactness of the copper film.
Thealuminum substrate 101 is oxidized by a micro-arc oxidation technique to form anoxide layer 103.
Compared with the traditional physical vapor deposition technology, the micro-arc oxidation technology is a film layer ingrowth technology, the bonding strength of the film layer and the matrix is high, and the film layer is easy to grow. The micro-arc oxidation technology mainly solves the problem of bulk resistance, and provides a framework for subsequent magnetic filtration deposition although the number of holes in the body or the surface is large, so that the filling of the nano-particles 102 is conveniently realized.
The magnetic filtration cathodic arc deposition technology of the invention is very easy to realize the formation of nanocrystalline in the film forming process due to high ionization efficiency, and simultaneously has no good insulating property of metal particles, which can not be realized by other technologies such as magnetic control, chemical vapor deposition and general multi-arc technology. Therefore, in the invention, a magnetic filtration cathodic arc deposition technology that the cathode is Al, the arc starting current is 40-100A, the ion beam current is 0.1-1A, the oxygen gas inflow is 0-500sccm, and the nitrogen gas inflow is 0-250sccm is adopted, and thenano particles 102 are deposited in a plurality of holes of the cleanedoxide layer 103, and simultaneously, thedense layer 104 is deposited on theoxide layer 103.
Under the test of 2500V, the leakage current of the whole device is not more than 10mA, and the heat dissipation power is not less than 18W.
As another embodiment of the present invention, the performance of the prepared high-power heat sink is tested, which specifically includes the following steps:
firstly, carrying out voltage withstanding test on a high-power radiator
The test equipment for carrying out the withstand voltage test is named as a breakdown voltage tester, and the model number of the breakdown voltage tester is GJW-50 KV. The test environmental conditions were: temperature: 22.0 ℃. Humidity: 50% RH. The test criteria were: IPC-TM-6502.562.
The test conditions were: the boost rate was AC 200V/s. The leakage current was 10 mA. The specific test results obtained are shown in table 1:
TABLE 1 high-power radiator as test device withstand voltage test result
Secondly, testing the heat conductivity coefficient of the high-power radiator
The name of the testing equipment for testing the heat conductivity coefficient is an interface material thermal resistance and heat conductivity coefficient measuring device, and the model is LW 938. The environmental conditions were: the temperature was 24.1 ℃. Humidity 49% RH. The test standard is ASTM D5470-12. The selected test conditions are shown in table 2:
TABLE 2 test conditions
| Test sample | Thermode temperature (. degree.C.) | Cold cathode temperature (. degree. C.) | Heat quantity (W) | Pressure (Psi) |
| 1 | 79.99 | 67.55 | 78.22 | 79.95 |
| 2 | 80.00 | 65.80 | 73.60 | 79.95 |
The test results obtained are shown in table 3:
TABLE 3 Heat conductivity coefficient test results of high-power heat sink as a test device
| Test sample | Thermal resistance (m)2K/W) | Thermal resistance (K/W) | Thickness of the whole plate (mm) | Whole plate coefficient of thermal conductivity |
| 1 | 0.0000516 | 0.081 | 1.01 | 19.57 |
| 2 | 0.0000435 | 0.045 | 1.01 | 23.22 |
Compared with the prior art, the technical scheme provided by the invention has the following advantages:
1. the preparation method provided by the invention has the insulating structure of micro-arc oxidized Al2O3Oxide nitride nanoparticle filler, alumina nano-film and super-insulating diamond-like coating. InsulationThe structure considers both the volume resistivity and the surface resistivity, and the overall longitudinal heat conduction efficiency of the structure exceeds 18W.
2. Compared with the existing aluminum alloy base body heat dissipation plate, the nano filler is filled more compactly and fully under the action of a gas ion source and high-power pulse, and the leakage current of the nano filler is not more than 10mA at 2500V high voltage.
3. Compared with the existing surface deposition technology, the surface compactness of the deposited film layer is higher based on the magnetic filtration cathodic arc deposition technology, and the deposited film layer has better insulation effect because the ionization rate is 100 percent and metal atoms are not basically generated when the film layer is led out. And, because the insulating effect is better so the insulating membranous layer can be made thinner, the thermal conductivity is stronger.
4. Compared with the existing surface treatment technology, the equipment has larger treatment size, can greatly increase the deposition efficiency and reduce the production cost.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other.
The principles and embodiments of the present invention are explained herein using specific examples, which are presented only to assist in understanding the method and its core concepts. Meanwhile, for a person skilled in the art, according to the idea of the present invention, the specific embodiments and the application range may be changed. In view of the above, the present disclosure should not be construed as limiting the invention.
Claims (10)
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114567967A (en)* | 2020-11-27 | 2022-05-31 | 核工业西南物理研究院 | Preparation method of high-thermal-conductivity insulating heat-conducting layer |
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