CN110791747A - Deposition device and deposition method for thin film material surface deposition - Google Patents

Abstract

The application discloses a deposition device and a deposition method for surface deposition of a thin film material, and relates to the field of manufacturing of diaphragms for secondary batteries. This application is through dividing a plurality of differences in the inner tube body and ventilating the region to let in specific gas in different ventilation regions, make the film around the within range of inner tube body a week, divide the reaction gas that regional score saw out from the air vent on the inner tube body wall, can realize a lot of ALD circulation.

Description

Deposition device and deposition method for thin film material surface deposition

Technical Field

The application relates to the field of manufacturing of diaphragms for secondary batteries, in particular to a deposition device and a deposition method for surface deposition of thin film materials.

Background

At present, a secondary battery system adopting liquid electrolyte, such as a lithium ion battery and the like, needs to adopt a diaphragm material to separate a positive electrode and a negative electrode, so as to avoid short circuit. The diaphragm material mainly comprises a polymer film or non-woven fabric which is made of high polymer materials such as Polyethylene (PE), polypropylene (PP), Polytetrafluoroethylene (PTFE) and the like and contains a microporous structure. The electrolyte exists in the microporous structure, and the conduction of ions between the positive electrode and the negative electrode is realized.

In order to improve the heat resistance and the electrochemical performance of the diaphragm material, most of the PP/PE microporous membranes are coated with oxide particles to form a ceramic layer, and the ceramic layer is improved to a certain extent, but the thickness of the coated ceramic layer is generally 1-4um, and the problems of adhesion between inorganic micro-nano particles and a diaphragm polymer, agglomeration of micro-nano particles and maintenance of diaphragm porosity are mostly involved, so that the technical defects which cannot be avoided exist,

in order to overcome the defects, a method for depositing oxide on the surface of the diaphragm by a deposition mode is provided. For example, chinese patent application publication No. CN106960933A discloses a "separator for a secondary battery having excellent heat resistance and shutdown characteristics", in which a heat-resistant coating layer is formed on at least one surface of a polymer base material by an Atomic Layer Deposition (ALD) method, thereby overcoming the defects of a coating process, improving the heat resistance and shutdown characteristics of the separator, and improving the safety of the battery. However, in this solution, the substrate is processed by the existing ALD apparatus, and different gas phase precursors are alternately introduced into the reactor to perform chemical adsorption and reaction on the substrate to form a deposited film, i.e. the substrate needs to be atomically deposited many times to form a uniform and stable heat-resistant coating. Therefore, the prior art lacks a deposition device specially applied to microporous film materials, and can not perform continuous and efficient deposition treatment.

Disclosure of Invention

The purpose of the application is to provide a deposition device and a deposition method for depositing a thin film material surface, which are used for depositing an oxide on the surface of a diaphragm material for a secondary battery.

In order to achieve the above purpose, the embodiments of the present application adopt the following technical solutions: a deposition apparatus for surface deposition of thin film materials, comprising: an outer cylinder; interior barrel, this interior barrel setting is internal at the urceolus, is formed with reaction space between interior barrel and the barrel, and the film passes reaction space around interior barrel a week, interior barrel has: the vent holes are uniformly distributed on the side wall of the inner cylinder body; a central shaft disposed at the center of the inner cylinder; the partition plate is fixedly installed on the periphery of the central shaft and used for equally dividing the space between the inner cylinder and the central shaft into a plurality of ventilation areas, each ventilation area comprises a plurality of first ventilation areas, a plurality of second ventilation areas and a plurality of third ventilation areas, the first ventilation areas and the second ventilation areas are alternately arranged, and the third ventilation areas are arranged between any group of first ventilation areas and any group of second ventilation areas.

In the technical scheme, the ALD cycle can be realized for a plurality of times by dividing the inner cylinder into a plurality of different ventilation areas and introducing specific gas into the different ventilation areas, so that the film can be divided into areas and score in the range of surrounding the inner cylinder for one circle, and the reaction gas can be discharged from the ventilation holes in the wall of the inner cylinder.

Further, according to this application embodiment, wherein, outer barrel includes: an inlet provided on a sidewall of the outer cylinder; and the outlet is arranged on the side wall of the outer cylinder body, and the outlet is arranged adjacent to the inlet.

Further, according to the embodiment of the application, the distance between the thin film and the inner cylinder is 0.2-2 cm.

Further, according to this application embodiment, wherein, the inner cylinder still includes: a neck portion; the cover body is arranged at the upper end of the neck part, a plurality of through holes are formed in the cover body, and the through holes correspond to the ventilation areas one to one; and the vent pipes are inserted into the through holes.

Further, according to the embodiment of the present application, wherein the deposition apparatus further comprises: and the air suction pipes are arranged on the periphery of the outer cylinder body and are uniformly distributed.

Further, according to the embodiment of the present application, wherein the suction pipe is connected to a suction pump.

Further, according to the embodiment of the present application, wherein the deposition apparatus further comprises: and the infrared heating device is arranged on the central shaft.

In addition, the embodiment of the application also discloses another technical scheme: a deposition method based on the deposition device for depositing the surface of the thin film material comprises the following steps: penetrating a film, wherein the film penetrates through an inlet on the side wall of the outer cylinder body, penetrates through the reaction space, winds around the inner cylinder body for a circle, and then penetrates out of an outlet on the side wall of the outer cylinder body; ventilating, namely, ventilating a first reaction gas into the first ventilating area, ventilating a second reaction gas into the second ventilating area, and ventilating a non-reaction gas into the third area; and an ALD cycle in which the thin film moves in the reaction space, such that any portion of the surface of the thin film can form a deposition layer having a prescribed thickness through a plurality of depositions of the first reactive gas, purges of the non-reactive gas, reactions of the second reactive gas, and re-purges of the non-reactive gas, thereby completing the ALD cycle.

Further, according to an embodiment of the present application, wherein the metal compound vapor includes a metal compound of at least one metal selected from the group consisting of aluminum, calcium, magnesium, silicon, titanium, and zirconium.

Further, according to the embodiment of the present application, wherein the metal compound vapor is Trimethylaluminum (TMA).

Further, according to the embodiment of the present application, wherein the second reaction gas is a vapor of a non-metallic compound.

Further, according to the embodiment of the present application, wherein the second reactive gas is water vapor.

Further, according to the embodiment of the present application, wherein the non-reactive gas is an inert gas.

Further, according to the embodiment of the present application, wherein the non-reactive gas is nitrogen. The moving speed of the film is 10 m/min-120 m/min.

Further, according to the embodiment of the present application, among others, during the ALD cycle step, the excess other deposits or reactions in the reaction space are exhausted out of the reaction space through thegas suction pipe 7.

Further, according to the embodiment of the present application, wherein the reaction space is vacuumized before the aeration step, the vacuum environment is maintained, and the degree of vacuum is 10^-7mTorr (millitorr) -100 Torr.

The embodiment of the application also discloses a microporous film which is prepared by adopting the deposition method based on the deposition device for depositing the surface of the film material.

Finally, the embodiment of the application also discloses a secondary battery which is provided with the microporous film.

Compared with the prior art, the method has the following technical effects: according to the embodiment of the application, the plurality of different areas are divided in the inner barrel, and specific gas is introduced into the different areas, so that the microporous film can simultaneously ventilate different parts of the surface of the microporous film in the moving process of passing through the reaction space through the first ventilating area and the first ventilating area, and a continuous and efficient ALD treatment mode can be realized.

Drawings

The present application is further described below with reference to the drawings and examples.

FIG. 1 is a schematic structural diagram of a deposition apparatus for deposition on a surface of a microporous thin film material according to the present application.

Fig. 2 is a transverse cross-sectional view of fig. 1.

Fig. 3 is a longitudinal sectional view of fig. 1.

In the attached drawings

1.Outer cylinder 2,diaphragm 3, lid

4. Breatherpipe 5,breathing pipe 6, inner cylinder

7.Partition plate 8, center shaft

Detailed Description

In order to make the objects, technical solutions and advantages of the present invention clear and fully described, embodiments of the present invention are further described in detail below with reference to the accompanying drawings. It is to be understood that the specific embodiments described herein are merely illustrative of some embodiments of the invention and are not limiting of the invention, and that all other embodiments obtained by those of ordinary skill in the art without the exercise of inventive faculty are within the scope of the invention.

In the description of the present invention, it should be noted that the terms "center", "middle", "upper", "lower", "left", "right", "inner", "outer", "top", "bottom", "side", "vertical", "horizontal", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention. Furthermore, the terms "a," "an," "first," "second," "third," "fourth," "fifth," and "sixth" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.

In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.

For the purposes of simplicity and explanation, the principles of the embodiments are described by referring mainly to examples. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the embodiments. But it is obvious. To one of ordinary skill in the art, the embodiments may be practiced without limitation to these specific details. In some instances, well-known methods and structures have not been described in detail so as not to unnecessarily obscure the embodiments. In addition, all embodiments may be used in combination with each other.

As shown in fig. 1-3, the present application discloses a deposition apparatus for surface deposition of thin film materials, which is mainly used for depositing oxides on the surface of a microporous thin film for a secondary battery, and the principle of the deposition apparatus is Atomic Layer Deposition (ALD), and the deposition apparatus comprises anouter cylinder 1 and aninner cylinder 6, wherein theouter cylinder 1 is coaxially sleeved outside theinner cylinder 6, so that an annular reaction space is formed between theouter cylinder 1 and theinner cylinder 6. The lower ends of theouter cylinder 1 and theinner cylinder 6 are sealed, the upper ends are provided with concentric openings, and the annular reaction space is in a sealed state. Specifically, the upper end of theinner cylinder body 6 is provided with a neck part, and a transition part is arranged between the neck part and the cylinder wall of theinner cylinder body 6; an annular baffle is arranged at the upper end opening of theouter barrel 1, one end of the annular baffle is fixedly connected with the end part of the barrel wall of theouter barrel 1, and the other end of the annular baffle is fixedly connected with the transition part of theinner barrel 6, so that the annular reaction space is in a relatively sealed state. The wall of theouter cylinder 1 is provided with an inlet and an outlet which are long strips for thefilm 2 to pass through and out, so that thefilm 2 passes through the reaction space and surrounds theinner cylinder 6 for a circle. And a plurality of vent holes are formed in the wall of theinner cylinder body 6, the vent holes are uniformly distributed in the wall of the inner cylinder body, and when theinner cylinder body 6 is ventilated, gas for reaction is led to the surface of the film through the vent holes, so that a deposition layer is formed.

In the above technical scheme, acentral shaft 8 is arranged at the center of theinner cylinder 6, a plurality ofpartition plates 7 are uniformly distributed on the periphery of thecentral shaft 8, thepartition plates 7 are fixed on thecentral shaft 8, the space between theinner cylinder 6 and thecentral shaft 8 is equally divided into a plurality of ventilation areas, and the ventilation areas comprise a plurality of first ventilation areas, a plurality of second ventilation areas and a plurality of third ventilation areas. The first ventilation areas and the second ventilation areas are alternately arranged, and the sequence between the single first ventilation area and the single second ventilation area is not limited. Between any set of first and second venting areas, a third venting area is provided. When the gas distribution device is used, first reaction gas is introduced into the first ventilation area, second reaction gas is introduced into the second ventilation area, and non-reaction gas is introduced into the third ventilation area.

In the above technical solution, in the embodiment of the present application, a plurality of different ventilation areas are divided in theinner cylinder 6, and specific gas is introduced into the different ventilation areas, so that thefilm 2 can achieve reaction gas that is permeated from the ventilation holes on the cylinder wall of theinner cylinder 6 in different areas within a range of surrounding theinner cylinder 6 by one circle, and thus, multiple ALD cycles can be realized.

Specifically, as in the present embodiment, for any part of the surface of themembrane 2, during the movement of themembrane 2, when it passes through one of the first venting areas, it receives the first reaction gas and forms a monolayer on the surface of the microporous membrane of the part; then entering a third ventilation area adjacent to the first ventilation area, and purging the part of the surface of the microporous membrane by non-reaction gas; then, entering a certain second ventilation area adjacent to the third ventilation area, and receiving a second reaction gas, wherein the second reaction gas reacts with the first monolayer deposited on the surface of the given part of the microporous membrane to form a deposition layer; and finally, entering another third ventilation area adjacent to the second ventilation area, and receiving the purging of the non-reaction gas, so as to finish an ALD cycle, and the like until the part of the microporous film passes through theouter cylinder 1. In the process that the wholethin film 2 penetrates into and out of theouter cylinder body 1, any part of the surface of thethin film 2 can form a deposition layer with a specified thickness through multiple times of deposition, purging, reaction of the second reaction gas and purging, so that a continuous and efficient ALD processing mode can be realized by using the microporous thin film surface deposition device.

In the technical placing scheme, the distance between thediaphragm 2 and the wall of theinner cylinder body 6 is 0.2-2cm, so that higher deposition efficiency can be ensured.

In the microporous film surface deposition apparatus disclosed in the present application, thecover body 3 is installed in the upper end of the neck of theinner cylinder body 6, thecover body 3 is provided with a plurality of through holes, the through holes correspond to the ventilation areas of the inner cylinder body one to one, the through holes are inserted with theventilation pipes 4, and theventilation pipes 4 are connected with different air sources for introducing specific gas into different ventilation areas.

In a microporous film surface deposition apparatus disclosed in the present application, anair suction pipe 7 is provided at the outer circumference of theouter cylinder 1 for discharging the excess other materials which are not deposited or reacted in the reaction space out of the reaction space. In particular, thesuction pipe 7 may be connected to a suction pump to provide suction for thesuction pipe 7 to suck gas.

In the microporous film surface deposition device disclosed in the present application, an infrared heating device can be installed on thecentral shaft 8 to heat the ventilation area, thereby ensuring the reaction temperature of the reaction space. In the present application, the temperature inside the reaction space is determined according to the reaction temperature of the first reaction gas, while also considering a temperature range in which damage to the substrate can be avoided. In order to improve the deposition efficiency, it is preferable to perform at the highest temperature from the aforementioned viewpoint. In addition, the temperature of the gas introduced into the box body is kept consistent with that in the box body.

The application also discloses a deposition method based on the deposition device for the surface of the thin film material, which comprises the following steps:

penetrating thefilm 2, penetrating thefilm 2 from an inlet on the side wall of theouter cylinder body 1, enabling thefilm 2 to penetrate through the reaction space, winding theinner cylinder body 6 for a circle, and then penetrating out from an outlet on the side wall of theouter cylinder body 1;

ventilating, namely, introducing a first reaction gas into the first ventilating area, introducing a second reaction gas into the second ventilating area, and introducing a non-reaction gas into the third ventilating area;

and an ALD cycle, in which thethin film 2 moves in the reaction space, so that any part of the surface of thethin film 2 can form a deposition layer with a specified thickness through a plurality of times of deposition, purging, reaction of the second reaction gas and re-purging, thereby completing the ALD cycle.

In the above technical solution, the first reaction gas is a metal compound vapor, and specifically includes at least one non-metal compound selected from carbon, nitrogen, sulfur and oxygen, preferably Trimethylaluminum (TMA).

In the above technical solution, the second reaction gas is a non-metal compound vapor, specifically including at least one non-metal compound selected from carbon, nitrogen, sulfur and oxygen, and preferably water vapor (H)₂O)。

In the above-mentioned embodiment, the non-reactive gas is an inert gas, preferably nitrogen (N)₂). And the non-reaction gas purges the surface of the microporous membrane, and removes the excess un-deposited first reaction gas and the excess un-reacted second reaction gas.

In a deposition method disclosed in the present application based on the above deposition apparatus for a surface of a thin film material, the moving speed of thethin film 2 is 10 m/min to 120 m/min. For the thin film surface deposition method in the embodiment of the present application, the moving speed of thethin film 2 in the reaction space also has an influence on the thickness of the deposited layer on the surface, and finally, the deposition efficiency is influenced. Therefore, the moving speed of thethin film 2 is related to the deposition thickness and the ventilation amount of the reaction gas required by the process, and the moving speed of thethin film 2 can be controlled within the range of 10 m/min to 120 m/min according to the deposition thickness and the ventilation amount of the reaction gas required by the process in the specific operation process of the technical personnel.

In a deposition method disclosed in the present application based on the above deposition apparatus for a surface of a thin film material, an excess of other materials which are not deposited or reacted in the reaction space are discharged out of the reaction space through thesuction pipe 7.

In the deposition method based on the deposition device for the surface of the thin film material, before the ventilation step, the reaction space is vacuumized, the vacuum environment is maintained, and the vacuum degree is 10^-7mTorr (millitorr) -100 Torr.

In the present application, by the above-mentioned deposition method in the deposition apparatus for a surface of a thin film material, a microporous thin film for a secondary battery can be prepared, and the surface of the microporous thin film is deposited with a layer of oxide having a uniform thickness, which can improve the heat resistance and electrochemical properties of the microporous thin film.

Compared with the prior art, the deposition device and the deposition method for depositing the surface of the thin film material disclosed by the application provide a continuous and efficient ALD treatment mode. In the prior art, due to the fact that ALD (atomic layer deposition) circulation needs to be carried out on the surface of the microporous film for multiple times, the carried treatment process is discontinuous and repeated, in the application, ALD circulation can be carried out for multiple times in the moving process of the film, and the efficiency of the film surface deposition process is greatly improved. In addition, because the film generally has a high aspect ratio, the deposition process in the prior art cannot be used for large-scale mass production, the length of the microporous film can be limited due to the device, and the application can directly perform deposition treatment on the continuous or rolled microporous film without limiting the length of the microporous film, so that the production efficiency of the microporous film is further improved.

Although the illustrative embodiments of the present application have been described above to enable those skilled in the art to understand the present application, the present application is not limited to the scope of the embodiments, and various modifications within the spirit and scope of the present application defined and determined by the appended claims will be apparent to those skilled in the art from this disclosure.

Claims (19)

1. A deposition apparatus for surface deposition of thin film materials, comprising:

an outer cylinder;

interior barrel, interior barrel sets up it is internal to go up the barrel, be formed with reaction space between interior barrel and the outer barrel, the film passes reaction space winds interior barrel a week, interior barrel has:

the vent holes are uniformly distributed on the side wall of the inner cylinder body;

a central shaft disposed at the center of the inner cylinder;

the partition plate is fixedly installed on the periphery of the central shaft, the partition plate is used for equally dividing the space between the inner cylinder body and the central shaft into a plurality of ventilation areas, the ventilation areas comprise a plurality of first ventilation areas, a plurality of second ventilation areas and a plurality of third ventilation areas, the first ventilation areas and the second ventilation areas are alternately arranged, and the third ventilation areas are arranged between any group of first ventilation areas and any group of second ventilation areas.

2. A deposition apparatus for thin film material surface deposition as claimed in claim 1, wherein the outer cylinder comprises:

an inlet disposed on a sidewall of the outer barrel;

and the outlet is arranged on the side wall of the outer cylinder body, and is adjacent to the inlet.

3. The deposition apparatus for deposition of a surface of a thin film material as claimed in claim 1, wherein the distance between the thin film and the inner cylinder is 0.2-2 cm.

4. The deposition apparatus for thin film material surface deposition as claimed in claim 1, wherein the inner barrel further comprises:

a neck portion;

the cover body is arranged at the upper end of the neck part, a plurality of through holes are formed in the cover body, and the through holes correspond to the ventilation areas one to one;

the air pipes are inserted into the through holes.

5. A deposition apparatus for thin film material surface deposition as claimed in claim 1, wherein the deposition apparatus further comprises:

the air suction pipes are arranged on the periphery of the outer cylinder body and are uniformly distributed.

6. The deposition apparatus of claim 5 wherein said getter line is connected to a getter pump.

7. A deposition apparatus for thin film material surface deposition as claimed in claim 1, wherein the deposition apparatus further comprises: an infrared heating device disposed on the central shaft.

8. A deposition method based on the deposition device for the surface deposition of the thin film material, which comprises the following steps: penetrating a film, wherein the film penetrates through an inlet on the side wall of the outer cylinder body, penetrates through the reaction space, winds around the inner cylinder body for a circle, and then penetrates out of an outlet on the side wall of the outer cylinder body;

ventilating, namely, ventilating a first reaction gas into the first ventilating area, ventilating a second reaction gas into the second ventilating area, and ventilating a non-reaction gas into the third area;

and an ALD cycle in which the thin film moves in the reaction space, such that any portion of the surface of the thin film can form a deposition layer having a prescribed thickness through a plurality of depositions of the first reactive gas, purges of the non-reactive gas, reactions of the second reactive gas, and re-purges of the non-reactive gas, thereby completing the ALD cycle.

9. The deposition method according to claim 8, wherein the metal compound vapor comprises a metal compound of at least one metal selected from the group consisting of aluminum, calcium, magnesium, silicon, titanium, and zirconium.

10. The deposition apparatus for thin film material surface deposition of claim 9, wherein the metal compound vapor is Trimethylaluminum (TMA).

11. The deposition method based on the deposition apparatus for thin film material surface deposition as claimed in claim 8, wherein the second reaction gas is a non-metal compound vapor.

12. The deposition method based on the deposition apparatus for thin film material surface deposition as claimed in claim 11, wherein the second reaction gas is water vapor.

13. The deposition method based on the deposition apparatus for thin film material surface deposition as claimed in claim 8, wherein the non-reactive gas is an inert gas.

14. The deposition method based on the deposition apparatus for thin film material surface deposition as claimed in claim 13, wherein the non-reactive gas is nitrogen.

15. The deposition method based on the deposition apparatus for the surface deposition of the thin film material as claimed in claim 8, wherein the moving speed of the thin film is 10 m/min to 120 m/min.

16. The deposition method based on the deposition apparatus for thin film material surface deposition as claimed in claim 8, wherein in the ALD cycle step, the excessive other un-deposited or reacted reaction space in the reaction space is exhausted out of the reaction space through the gas suction pipe 7.

17. The deposition method based on the deposition device for the surface deposition of the thin film material as claimed in claim 8, wherein before the aeration step, the reaction space is vacuumized and maintained in a vacuum environment with a degree of vacuum of 10^-7mTorr (millitorr) -100 Torr.

18. A microporous film produced by a deposition method based on the deposition apparatus for surface deposition of a thin film material as claimed in any one of claims 8 to 17.

19. A secondary battery having a microporous film of claim 18.

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