技术领域technical field
本申请涉及超导电缆技术领域，特别是涉及一种三相高温超导通电导体。The present application relates to the technical field of superconducting cables, in particular to a three-phase high-temperature superconducting electric conductor.
背景技术Background technique
高温超导电缆具有线损低、传输容量大、走廊占地小、环境友好等诸多优点，为电网提供了一种高效、紧凑、可靠、绿色的电能传输方式。由于超导电缆的低压大电流特性，它具备减少电网电压等级，简化电网架构的潜质，对电网的长期发展规划具有重要意义。三相同轴式超导交流电缆的结构从内到外依次为骨架、三相超导体及相间绝缘、屏蔽层、低温杜瓦管。High-temperature superconducting cables have many advantages such as low line loss, large transmission capacity, small corridor footprint, and environmental friendliness, providing an efficient, compact, reliable, and green power transmission method for the grid. Due to the low-voltage and high-current characteristics of superconducting cables, it has the potential to reduce the grid voltage level and simplify the grid structure, which is of great significance to the long-term development planning of the grid. The structure of the three-phase axial superconducting AC cable is a skeleton, a three-phase superconductor and interphase insulation, a shielding layer, and a low-temperature Dewar tube from the inside to the outside.
由于高温超导电缆需要在低温环境下实现超导，因此需要在骨架和低温杜瓦管中通入液氮，形成一个内进外出的通道。但是通过液氮向超导层提供低温环境时，需要先使骨架制冷，进而通过热传递向超导层提供低温环境，热稳定性相对较差。Since the high-temperature superconducting cable needs to achieve superconductivity in a low-temperature environment, it is necessary to pass liquid nitrogen into the skeleton and the low-temperature Dewar tube to form an inside-out passage. However, when liquid nitrogen is used to provide a low-temperature environment to the superconducting layer, the skeleton needs to be refrigerated first, and then the low-temperature environment is provided to the superconducting layer through heat transfer, and the thermal stability is relatively poor.
发明内容Contents of the invention
基于此，有必要针对传统的三相高温超导通电导体热稳定性差的问题，提供一种三相高温超导通电导体。Based on this, it is necessary to provide a three-phase high-temperature superconducting conductor for the poor thermal stability of the traditional three-phase high-temperature superconducting conductor.
一种三相高温超导通电导体，包括：A three-phase high-temperature superconducting electric conductor, comprising:
骨架，所述骨架开设有微流通道；a skeleton, the skeleton is provided with a microfluidic channel;
第一绝缘层，绕制于所述骨架，所述第一绝缘层覆盖所述微流通道；a first insulating layer wound around the skeleton, and the first insulating layer covers the microfluidic channel;
第一超导层，以第一预设螺旋角绕制于所述第一绝缘层；a first superconducting layer wound on the first insulating layer with a first preset helix angle;
第二绝缘层，绕制于所述第一超导层；a second insulating layer wound around the first superconducting layer;
第二超导层，以第二预设螺旋角绕制于所述第二绝缘层；a second superconducting layer wound on the second insulating layer with a second preset helix angle;
第三绝缘层，绕制于所述第二超导层；a third insulating layer wound around the second superconducting layer;
第三超导层，以所述第一预设螺旋角绕制于所述第三绝缘层；以及a third superconducting layer wound on the third insulating layer with the first preset helix angle; and
第四绝缘层，绕制于所述第三超导层。The fourth insulating layer is wound around the third superconducting layer.
在其中一个实施例中，所述微流通道为通孔和条形槽中的一种或多种。In one embodiment, the microfluidic channels are one or more of through holes and strip grooves.
在其中一个实施例中，所述骨架间隔开设多个所述通孔，所述通孔对称分布于所述骨架的外侧壁。In one of the embodiments, the frame is provided with a plurality of through holes at intervals, and the through holes are symmetrically distributed on the outer wall of the frame.
在其中一个实施例中，所述骨架还间隔开设多个条形槽，与所述通孔间隔设置，所述条形槽对称分布于所述骨架的侧壁。In one of the embodiments, the frame is further provided with a plurality of bar-shaped grooves spaced apart from the through hole, and the bar-shaped grooves are symmetrically distributed on the side wall of the frame.
在其中一个实施例中，所述第一预设螺旋角与所述第二预设螺旋角互补。In one of the embodiments, the first preset helix angle is complementary to the second preset helix angle.
在其中一个实施例中，还包括：In one of the embodiments, it also includes:
第一铜稳定层，绕制于所述第一绝缘层，并且所述第一铜稳定层位于所述第一绝缘层和所述第一超导层之间；a first copper stabilization layer wound around the first insulating layer, and the first copper stabilization layer is located between the first insulating layer and the first superconducting layer;
第二铜稳定层，绕制于所述第二绝缘层，并且所述第二铜稳定层位于所述第二绝缘层和所述第二超导层之间；以及a second copper stabilization layer wound around the second insulating layer, and the second copper stabilization layer is located between the second insulating layer and the second superconducting layer; and
第三铜稳定层，绕制于所述第三绝缘层，并且所述第三铜稳定层位于所述第三绝缘层和所述第三超导层之间。A third copper stabilization layer is wound around the third insulation layer, and the third copper stabilization layer is located between the third insulation layer and the third superconducting layer.
在其中一个实施例中，还包括：In one of the embodiments, it also includes:
第一半导电层，绕制于所述骨架，并且所述第一半导电层位于所述骨架与所述第一绝缘层之间；a first semiconductive layer wound around the skeleton, and the first semiconductive layer is located between the skeleton and the first insulating layer;
第二半导电层，绕制于所述第一绝缘层，并且所述第二半导电层位于所述第一绝缘层与所述第一铜稳定层之间；a second semiconducting layer wound around the first insulating layer, and the second semiconducting layer is located between the first insulating layer and the first copper stabilization layer;
第三半导电层，绕制于所述第一超导层，并且所述第三半导电层位于所述第二绝缘层与所述第一超导层之间；a third semiconducting layer wound around the first superconducting layer, and the third semiconducting layer is located between the second insulating layer and the first superconducting layer;
第四半导电层，绕制于所述第二绝缘层，并且所述第四半导电层位于所述第二绝缘层与所述第二铜稳定层之间；a fourth semiconducting layer wound around the second insulating layer, and the fourth semiconducting layer is located between the second insulating layer and the second copper stabilization layer;
第五半导电层，绕制于所述第二超导层，并且所述第五半导电层位于所述第三绝缘层与所述第二超导层之间；a fifth semiconducting layer wound around the second superconducting layer, and the fifth semiconducting layer is located between the third insulating layer and the second superconducting layer;
第六半导电层，绕制于所述第三绝缘层，并且所述第六半导电层位于所述第三绝缘层与所述第三铜稳定层之间；a sixth semiconducting layer wound around the third insulating layer, and the sixth semiconducting layer is located between the third insulating layer and the third copper stabilization layer;
第七半导电层，绕制于所述第三超导层，并且所述第七半导电层位于所述第四绝缘层与所述第三超导层之间；以及a seventh semiconducting layer wound around the third superconducting layer, and the seventh semiconducting layer is located between the fourth insulating layer and the third superconducting layer; and
第八半导电层，绕制于所述第四绝缘层，并且第八半导电层和所述第七半导电层位于所述第四绝缘层的两侧。The eighth semiconductive layer is wound around the fourth insulating layer, and the eighth semiconductive layer and the seventh semiconductive layer are located on both sides of the fourth insulating layer.
在其中一个实施例中，还包括：In one of the embodiments, it also includes:
铜屏蔽层，绕制于所述第八半导电层。The copper shielding layer is wound on the eighth semiconducting layer.
在其中一个实施例中，所述铜屏蔽层单端或者两端接地，以形成法拉第笼。In one embodiment, one or both ends of the copper shielding layer are grounded to form a Faraday cage.
在其中一个实施例中，还包括：In one of the embodiments, it also includes:
保护层，绕制于所述铜屏蔽层。The protective layer is wound around the copper shielding layer.
在其中一个实施例中，所述骨架为不锈钢环形波纹管，所述不锈钢环形波纹管具有中心通道，所述中心通道通过冷却媒介，所述冷却媒介为液氮。In one of the embodiments, the frame is a stainless steel annular bellows, and the stainless steel annular bellows has a central channel, and the central channel passes through a cooling medium, and the cooling medium is liquid nitrogen.
上述三相高温超导通电导体，包括骨架、绕制于骨架的多层超导层以及绕制于各超导层两侧的绝缘层。所述骨架上开设有微流通道。冷却媒介通过所述微流通道可以直接向绕制于所述骨架的各超导层直接提供冷源，提高了所述三相高温超导通电导体的热稳定性，并且在稳态条件下，降低了各超导层的环境温度，进而提高其载流能力。The above-mentioned three-phase high-temperature superconducting electric conductor includes a skeleton, multi-layer superconducting layers wound on the skeleton, and insulating layers wound on both sides of each superconducting layer. A microfluidic channel is opened on the frame. The cooling medium can directly provide a cold source to each superconducting layer wound on the skeleton through the microfluidic channel, which improves the thermal stability of the three-phase high-temperature superconducting conductor, and under steady-state conditions, The ambient temperature of each superconducting layer is reduced, thereby improving its current carrying capacity.
附图说明Description of drawings
图1为本申请一个实施例提供的一种三相高温超导通电导体结构示意图；FIG. 1 is a schematic structural diagram of a three-phase high-temperature superconducting conductor provided by an embodiment of the present application;
图2为本申请一个实施例提供的一种多层超导层的排列结构示意图；Fig. 2 is a schematic diagram of an arrangement structure of a multilayer superconducting layer provided by an embodiment of the present application;
图3为本申请一个实施例提供的一种三相高温超导通电导体中骨架截面结构示意图；3 is a schematic diagram of a cross-sectional structure of a skeleton in a three-phase high-temperature superconducting conductor provided by an embodiment of the present application;
图4为本申请一个实施例提供的一种三相高温超导通电导体中骨架截面结构示意图；Fig. 4 is a schematic cross-sectional structure diagram of a skeleton in a three-phase high-temperature superconducting conducting conductor provided by an embodiment of the present application;
图5为本申请一个实施例提供的一种三相高温超导通电导体中骨架截面结构示意图；FIG. 5 is a schematic diagram of a cross-sectional structure of a skeleton in a three-phase high-temperature superconducting conductor provided by an embodiment of the present application;
图6为本申请一个实施例提供的一种三相高温超导通电导体结构示意图。FIG. 6 is a schematic structural diagram of a three-phase high-temperature superconducting conductor provided by an embodiment of the present application.
主要元件附图标号说明Explanation of main components with reference numerals
三相高温超导通电导体10Three-phase high temperature superconducting conductor 10
骨架100Skeleton 100
微流通道110Microfluidic channel 110
通孔111Via 111
条形槽112Bar groove 112
第一绝缘层210first insulating layer 210
第二绝缘层220second insulating layer 220
第三绝缘层230third insulating layer 230
第四绝缘层240Fourth insulating layer 240
第五绝缘层250Fifth insulating layer 250
第六绝缘层260Sixth insulating layer 260
第七绝缘层270Seventh insulating layer 270
第一超导层310first superconducting layer 310
第二超导层320second superconducting layer 320
第三超导层330third superconducting layer 330
第四超导层340Fourth superconducting layer 340
第五超导层350Fifth superconducting layer 350
第六超导层360Sixth superconducting layer 360
第一铜稳定层410first copper stabilization layer 410
第二铜稳定层420Second copper stabilization layer 420
第三铜稳定层430third copper stabilization layer 430
第四铜稳定层440fourth copper stabilization layer 440
第五铜稳定层450fifth copper stabilization layer 450
第六铜稳定层460Sixth copper stabilization layer 460
第一半导电层511The first semiconducting layer 511
第二半导电层512Second semiconducting layer 512
第三半导电层521The third semiconducting layer 521
第四半导电层522Fourth semiconducting layer 522
第五半导电层531Fifth semiconducting layer 531
第六半导电层532Sixth semiconducting layer 532
第七半导电层541Seventh semiconducting layer 541
第八半导电层542Eighth semiconducting layer 542
第九半导电层551Ninth semiconducting layer 551
第十半导电层552Tenth semiconducting layer 552
第十一半导电层561Eleventh semiconductive layer 561
第十二半导电层562Twelfth semiconducting layer 562
第十三半导电层571Thirteenth semiconducting layer 571
第十四半导电层572Fourteenth semiconducting layer 572
铜屏蔽层600Copper shield 600
保护层700protective layer 700
具体实施方式Detailed ways
为使本申请的上述目的、特征和优点能够更加明显易懂，下面结合附图对本申请的具体实施方式做详细的说明。在下面的描述中阐述了很多具体细节以便于充分理解本申请。但是本申请能够以很多不同于在此描述的其它方式来实施，本领域技术人员可以在不违背本申请内涵的情况下做类似改进，因此本申请不受下面公开的具体实施的限制。In order to make the above-mentioned purpose, features and advantages of the present application more obvious and understandable, the specific implementation manners of the present application will be described in detail below in conjunction with the accompanying drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the application. However, the present application can be implemented in many other ways different from those described here, and those skilled in the art can make similar improvements without departing from the connotation of the present application. Therefore, the present application is not limited by the specific implementation disclosed below.
需要说明的是，当元件被称为“设置于”另一个元件，它可以直接在另一个元件上或者也可以存在居中的元件。当一个元件被认为是“连接”另一个元件，它可以是直接连接到另一个元件或者可能同时存在居中元件。It should be noted that when an element is referred to as being “disposed on” another element, it may be directly on the other element or there may also be an intervening element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or intervening elements may also be present.
除非另有定义，本文所使用的所有的技术和科学术语与属于本申请的技术领域的技术人员通常理解的含义相同。本文中在本申请的说明书中所使用的术语只是为了描述具体的实施例的目的，不是旨在于限制本申请。本文所使用的术语“及/或”包括一个或多个相关的所列项目的任意的和所有的组合。Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field to which this application belongs. The terms used herein in the specification of the application are only for the purpose of describing specific embodiments, and are not intended to limit the application. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
请参见图1，本申请一个实施例提供一种三相高温超导通电导体10。所述三相高温超导通电导10至少包括骨架100、四层绝缘层以及三层超导层。四层绝缘层为第一绝缘层210、第二绝缘层220、第三绝缘层230以及第四绝缘层240。三层超导层为第一超导层310、第二超导层320以及第三超导层330。Referring to FIG. 1 , an embodiment of the present application provides a three-phase high temperature superconducting conductor 10 . The three-phase high temperature superconducting conductor 10 at least includes a skeleton 100, four insulating layers and three superconducting layers. The four insulating layers are the first insulating layer 210 , the second insulating layer 220 , the third insulating layer 230 and the fourth insulating layer 240 . The three superconducting layers are a first superconducting layer 310 , a second superconducting layer 320 and a third superconducting layer 330 .
所述骨架100开设有微流通道110。所述第一绝缘层210绕制于所述骨架100，所述第一绝缘层210覆盖所述微流通道110。所述第一超导层310以第一预设螺旋角绕制于所述第一绝缘层210。所述第二绝缘层220绕制于所述第一超导层310。所述第二超导层320以第二预设螺旋角绕制于所述第二绝缘层220。为了减小轴向磁场，所述第一预设螺旋角与所述第二预设螺旋角相对于法线互补。所述法线为垂直于所述骨架100长度方向的线。所述第三绝缘层230绕制于所述第二超导层320。所述第三超导层330以所述第一预设螺旋角绕制于所述第三绝缘层230。所述第四绝缘层240绕制于所述第三超导层330。各层超导层的绕制方向请参见图2。The framework 100 is provided with a microfluidic channel 110 . The first insulating layer 210 is wound around the skeleton 100 , and the first insulating layer 210 covers the microfluidic channel 110 . The first superconducting layer 310 is wound on the first insulating layer 210 with a first preset helix angle. The second insulating layer 220 is wound around the first superconducting layer 310 . The second superconducting layer 320 is wound on the second insulating layer 220 with a second preset helix angle. In order to reduce the axial magnetic field, the first preset helix angle and the second preset helix angle are complementary with respect to the normal. The normal is a line perpendicular to the length direction of the frame 100 . The third insulating layer 230 is wound around the second superconducting layer 320 . The third superconducting layer 330 is wound on the third insulating layer 230 with the first preset helix angle. The fourth insulating layer 240 is wound around the third superconducting layer 330 . Please refer to Figure 2 for the winding direction of each superconducting layer.
所述三相高温超导通电导10最内侧是用于绕制超导层以及作为制冷工质通道的所述骨架100。由于电缆在运输及安装过程中会有一定程度的弯曲，因此所述骨架100可以有一定的柔度以及刚度。所述骨架100可以选用不锈钢材质的波纹管。所述不锈钢环形波纹管具有中心通道，所述中心通道通过冷却媒介，所述冷却媒介为液氮。由于所述骨架100需要作为制冷工质通道，因此所述骨架100为内部中空的波纹管。冷却媒介通过在所述骨架100内流动带走热量，以向绕制于所述骨架100的多层超导层提供低温环境。但是通过冷却媒介向超导层提供低温环境时，需要先使所述骨架100制冷，进而通过热传递向超导层提供低温环境，热稳定性相对较差。为了提高所述三相高温超导通电导体10的热稳定性，可以在所述骨架100上开设微流通道110。即在所述骨架100的侧壁上开设通孔或凹槽。所述微流通道100可以是一条。所述微流通道100还可以是多条，只要不影响所述骨架100的支撑作用即可。此时，所述冷却媒介在所述骨架100内流动时，可以通过所述微流通道110与绕制于所述骨架100上的第一超导层310接触，提高了制冷效果。The innermost part of the three-phase high-temperature superconducting conductor 10 is the skeleton 100 for winding a superconducting layer and serving as a refrigerant channel. Since the cables will be bent to a certain extent during transportation and installation, the framework 100 can have certain flexibility and rigidity. The frame 100 can be made of stainless steel bellows. The stainless steel annular bellows has a central channel through which a cooling medium is liquid nitrogen. Since the frame 100 needs to be used as a refrigerant channel, the frame 100 is a hollow corrugated tube. The cooling medium flows through the frame 100 to remove heat, so as to provide a low-temperature environment for the multi-layer superconducting layers wound around the frame 100 . However, when a cooling medium is used to provide a low temperature environment to the superconducting layer, the skeleton 100 needs to be refrigerated first, and then the low temperature environment is provided to the superconducting layer through heat transfer, and the thermal stability is relatively poor. In order to improve the thermal stability of the three-phase high-temperature superconducting conductor 10 , a microfluidic channel 110 may be provided on the skeleton 100 . That is, through holes or grooves are opened on the side walls of the framework 100 . The microfluidic channel 100 may be one. The microfluidic channels 100 can also be multiple, as long as the supporting function of the framework 100 is not affected. At this time, when the cooling medium flows in the skeleton 100 , it can contact the first superconducting layer 310 wound on the skeleton 100 through the microfluidic channel 110 , which improves the cooling effect.
在所述骨架100与所述第一超导层310之间、各相邻超导层之间以及所述第三层超导电层330外侧需要绕制绝缘结构，来隔离接地层与通电导体中的各超导层。由于本申请中所述三相高温超导通电导10为低温绝缘结构，绝缘层需要选用可耐低温的材质。各绝缘层的厚度可以根据耐压等级进行设计。在一个可选的实施例中，所述绝缘层可以为聚丙烯层压纸(PPLP)。所述聚丙烯层压纸为三层结构，外两层为木纤维纸，内层为聚丙烯。Between the skeleton 100 and the first superconducting layer 310, between adjacent superconducting layers and outside the third layer of superconducting layer 330, an insulating structure needs to be wound to isolate the grounding layer from the current-carrying conductor. each superconducting layer. Since the three-phase high-temperature superconducting conductor 10 described in this application is a low-temperature insulating structure, the insulating layer needs to be made of a material that can withstand low temperatures. The thickness of each insulating layer can be designed according to the withstand voltage level. In an optional embodiment, the insulating layer may be polypropylene laminated paper (PPLP). The polypropylene laminated paper has a three-layer structure, the outer two layers are wood fiber paper, and the inner layer is polypropylene.
本实施例中，上述三相高温超导通电导体10包括骨架100、绕制于所述骨架100的多层超导层以及绕制于各超导层两侧的绝缘层。所述骨架100上开设有微流通道110。冷却媒介通过所述微流通道110可以直接向绕制于所述骨架100的各超导层直接提供冷源，提高了所述三相高温超导通电导体10的热稳定性，并且在稳态条件下，降低了各超导层的环境温度，进而提高其载流能力。In this embodiment, the three-phase high temperature superconducting conductor 10 includes a frame 100 , multi-layer superconducting layers wound on the frame 100 , and insulating layers wound on both sides of each superconducting layer. A microfluidic channel 110 is opened on the framework 100 . The cooling medium can directly provide a cold source to each superconducting layer wound on the skeleton 100 through the microfluidic channel 110, which improves the thermal stability of the three-phase high-temperature superconducting conductor 10, and in a steady state Under these conditions, the ambient temperature of each superconducting layer is reduced, thereby increasing its current-carrying capacity.
在其中一个实施例中，所述微流通道110为通孔111和条形槽112中的一种或多种。所述通孔111的形状和数量不做限制，只要能确保所述冷却媒介可以通过所述通孔111流入到所述骨架的外侧面，并且不影响所述骨架100的支撑作用即可。同样的，所述条形槽112的形状和数量也不做限制，只要能确保所述冷却媒介可以通过所述条形槽112流入到所述骨架的外侧面，并且不影响所述骨架100的支撑作用即可。In one embodiment, the microfluidic channel 110 is one or more of through holes 111 and strip grooves 112 . The shape and quantity of the through holes 111 are not limited, as long as the cooling medium can flow into the outer surface of the framework through the through holes 111 without affecting the supporting function of the framework 100 . Similarly, the shape and quantity of the strip grooves 112 are not limited, as long as it can ensure that the cooling medium can flow into the outer surface of the framework through the strip grooves 112, and does not affect the structure of the framework 100. Just support.
在一个可选的实施例中，请参见图3，所述微流通道110只包括通孔111。即在所述骨架100间隔开设多个所述通孔111。为了保证所述骨架100的支撑稳定性，所述通孔111对称分布于所述骨架100的外侧壁。In an optional embodiment, referring to FIG. 3 , the microfluidic channel 110 only includes through holes 111 . That is, a plurality of through holes 111 are opened in the framework 100 at intervals. In order to ensure the support stability of the frame 100 , the through holes 111 are symmetrically distributed on the outer wall of the frame 100 .
在一个可选的实施例中，请参见图4，所述微流通道110只包括条形槽112。即在所述骨架100间隔开设多个所述条形槽112。为了保证所述骨架100的支撑稳定性，所述条形槽112对称分布于所述骨架100的外侧壁。In an optional embodiment, referring to FIG. 4 , the microfluidic channel 110 only includes strip grooves 112 . That is, a plurality of the bar-shaped grooves 112 are provided at intervals on the framework 100 . In order to ensure the supporting stability of the frame 100 , the bar-shaped grooves 112 are symmetrically distributed on the outer wall of the frame 100 .
在一个可选的实施例中，请参见图5，所述微流通道110可以既包括通孔11，还包括条形槽112。即所述骨架100上间隔开设多个条形槽112和多个通孔111。例如，在所述骨架100的侧壁上对称开设多行多列所述通孔111，并且在所述骨架100的侧壁上相邻行之间开设所述条形槽112。In an optional embodiment, referring to FIG. 5 , the microfluidic channel 110 may include both through holes 11 and strip grooves 112 . That is, a plurality of bar-shaped grooves 112 and a plurality of through holes 111 are defined on the framework 100 at intervals. For example, multiple rows and columns of the through holes 111 are symmetrically opened on the side wall of the frame 100 , and the bar-shaped grooves 112 are opened between adjacent rows on the side wall of the frame 100 .
请参见图6，在一个实施例中，所述三相高温超导通电导体10至少包括骨架100、六层绝缘层以及五层超导层。六层绝缘层为第一绝缘层210、第二绝缘层220、第三绝缘层230、第四绝缘层240第五绝缘层250以及第六绝缘层260。五层超导层为第一超导层310、第二超导层320、第三超导层330、第四超导层340以及第五超导层350。Please refer to FIG. 6 , in one embodiment, the three-phase high temperature superconducting conductor 10 at least includes a skeleton 100 , six insulating layers and five superconducting layers. The six insulating layers are the first insulating layer 210 , the second insulating layer 220 , the third insulating layer 230 , the fourth insulating layer 240 , the fifth insulating layer 250 and the sixth insulating layer 260 . The five superconducting layers are the first superconducting layer 310 , the second superconducting layer 320 , the third superconducting layer 330 , the fourth superconducting layer 340 and the fifth superconducting layer 350 .
所述第一绝缘层210绕制于所述骨架100。所述第一超导层310以第一预设螺旋角绕制于所述第一绝缘层210。所述第二绝缘层220绕制于所述第一超导层310。所述第二超导层320以第二预设螺旋角绕制于所述第二绝缘层220。为了减小轴向磁场，所述第一预设螺旋角与所述第二预设螺旋角相对于法线互补。所述法线为垂直于所述骨架100长度方向的线。所述第三绝缘层230绕制于所述第二超导层320。所述第三超导层330以所述第一预设螺旋角绕制于所述第三绝缘层230。所述第四绝缘层240绕制于所述第三超导层330。所述第四超导层340以所述第二预设螺旋角绕制于所述第四绝缘层240。所述第五绝缘层250绕制于所述第四超导层340。所述第五超导层350以所述第一预设螺旋角绕制于所述第五绝缘层250。所述第六绝缘层260绕制于所述第五超导层350。The first insulating layer 210 is wound around the skeleton 100 . The first superconducting layer 310 is wound on the first insulating layer 210 with a first preset helix angle. The second insulating layer 220 is wound around the first superconducting layer 310 . The second superconducting layer 320 is wound on the second insulating layer 220 with a second preset helix angle. In order to reduce the axial magnetic field, the first preset helix angle and the second preset helix angle are complementary with respect to the normal. The normal is a line perpendicular to the length direction of the frame 100 . The third insulating layer 230 is wound around the second superconducting layer 320 . The third superconducting layer 330 is wound on the third insulating layer 230 with the first preset helix angle. The fourth insulating layer 240 is wound around the third superconducting layer 330 . The fourth superconducting layer 340 is wound around the fourth insulating layer 240 with the second preset helix angle. The fifth insulating layer 250 is wound around the fourth superconducting layer 340 . The fifth superconducting layer 350 is wound around the fifth insulating layer 250 with the first preset helix angle. The sixth insulating layer 260 is wound around the fifth superconducting layer 350 .
本实施例中，所述三相高温超导通电导体10包括骨架100、绕制于所述骨架的五层超导层以及绕制于各超导层两侧的绝缘层。在满足传输容量的情况下，所述三相高温超导通电导体10可以将其中的三层超导层作为传输过程的三相。此时另外两层超导层可以屏蔽接地。在传输量要求较高的情况下，所述三相高温超导通电导体10还可以将五层超导层中的两层超导层作为传输过程中的一相，另外两层超导层作为另一相，最后剩余的一层超导层作为第三相。所述三相高温超导通电导体的这种结构在使用功能上具有多样性。In this embodiment, the three-phase high temperature superconducting conductor 10 includes a skeleton 100 , five superconducting layers wound on the skeleton, and insulating layers wound on both sides of each superconducting layer. Under the condition that the transmission capacity is satisfied, the three-phase high-temperature superconducting conducting conductor 10 may use the three superconducting layers therein as the three phases of the transmission process. At this time, the other two layers of superconducting layers can be shielded and grounded. In the case of high transmission capacity requirements, the three-phase high-temperature superconducting conducting conductor 10 can also use two superconducting layers in the five-layer superconducting layer as a phase in the transmission process, and the other two superconducting layers as phases in the transmission process. Another phase, the last remaining superconducting layer acts as the third phase. This structure of the three-phase high-temperature superconducting conductor has various functions in use.
在其中一个实施例中，所述三相高温超导通电导体10还包括第六超导层360和第七绝缘层270。即，此时所述三相高温超导通电导体10包括六层超导层以及设置于每一层所述超导层两侧的绝缘层。所述第六超导层360以所述第二预设螺旋角绕制于所述第六绝缘层260。所述第七绝缘层270以预设螺旋角绕制于所述第六超导层360。In one embodiment, the three-phase high temperature superconducting conductor 10 further includes a sixth superconducting layer 360 and a seventh insulating layer 270 . That is, at this time, the three-phase high-temperature superconducting conducting conductor 10 includes six superconducting layers and insulating layers disposed on both sides of each superconducting layer. The sixth superconducting layer 360 is wound on the sixth insulating layer 260 with the second preset helix angle. The seventh insulating layer 270 is wound around the sixth superconducting layer 360 with a preset helix angle.
本实施例中，所述三相高温超导通电导体10包括六层超导层。当单层超导层的可传输容量大于或等于实际预传输容量时，选取六层超导层中的三层超导层作为一路传输过程的三相导电层，剩余的三层超导层作为另一路传输过程的三相导电层。当单层超导层的可传输容量小于实际预传输容量时，选取六层超导层中的两层超导层作为传输过程的第一相导电层，选取剩余的四层超导层中的两层超导层作为传输过程的第二相导电层，并将剩余的另外两层超导层作为传输过程的第三相导电层。所述三相高温超导通电导体的这种结构在使用功能上具有多样性。In this embodiment, the three-phase high temperature superconducting conducting conductor 10 includes six superconducting layers. When the transmissible capacity of a single superconducting layer is greater than or equal to the actual pre-transporting capacity, three superconducting layers among the six superconducting layers are selected as the three-phase conducting layer in one transmission process, and the remaining three superconducting layers are used as Three-phase conductive layer for another transmission process. When the transportable capacity of a single superconducting layer is less than the actual pre-transporting capacity, two of the six superconducting layers are selected as the first phase conducting layer in the transmission process, and the remaining four superconducting layers are selected as The two superconducting layers are used as the second-phase conductive layer in the transmission process, and the remaining two superconducting layers are used as the third-phase conductive layer in the transmission process. This structure of the three-phase high-temperature superconducting conductor has various functions in use.
在其中一个实施例中，所述三相高温超导通电导体10还包括多层铜稳定层。所述多层铜稳定层为第一铜稳定层410、第二铜稳定层420、第三铜稳定层430、第四铜稳定层440、第五铜稳定层450和第六铜稳定层460。所述第一铜稳定层410绕制于所述第一绝缘层210，并且所述第一铜稳定层410位于所述第一绝缘层210和所述第一超导层310之间。所述第二铜稳定层420绕制于所述第二绝缘层220，并且所述第二铜稳定层420位于所述第二绝缘层220和所述第二超导层320之间。所述第三铜稳定层430绕制于所述第三绝缘层230，并且所述第三铜稳定层430位于所述第三绝缘层230和所述第三超导层330之间。所述第四铜稳定层440绕制于所述第四绝缘层240，并且所述第四铜稳定层440位于所述第四绝缘层240和所述第四超导层340之间。所述第五铜稳定层450绕制于所述第五绝缘层250，并且所述第五铜稳定层450位于所述第五绝缘层250和所述第五超导层350之间。所述第六铜稳定层460绕制于所述第六绝缘层260，并且所述第六铜稳定层460位于所述第六绝缘层260和所述第六超导层360之间。In one of the embodiments, the three-phase high temperature superconducting conductor 10 further includes a multi-layer copper stabilization layer. The multi-layer copper stabilization layers are a first copper stabilization layer 410 , a second copper stabilization layer 420 , a third copper stabilization layer 430 , a fourth copper stabilization layer 440 , a fifth copper stabilization layer 450 and a sixth copper stabilization layer 460 . The first copper stabilizing layer 410 is wound around the first insulating layer 210 , and the first copper stabilizing layer 410 is located between the first insulating layer 210 and the first superconducting layer 310 . The second copper stabilization layer 420 is wound around the second insulation layer 220 , and the second copper stabilization layer 420 is located between the second insulation layer 220 and the second superconducting layer 320 . The third copper stabilization layer 430 is wound around the third insulation layer 230 , and the third copper stabilization layer 430 is located between the third insulation layer 230 and the third superconducting layer 330 . The fourth copper stabilization layer 440 is wound around the fourth insulation layer 240 , and the fourth copper stabilization layer 440 is located between the fourth insulation layer 240 and the fourth superconducting layer 340 . The fifth copper stabilization layer 450 is wound around the fifth insulation layer 250 , and the fifth copper stabilization layer 450 is located between the fifth insulation layer 250 and the fifth superconducting layer 350 . The sixth copper stabilization layer 460 is wound around the sixth insulation layer 260 , and the sixth copper stabilization layer 460 is located between the sixth insulation layer 260 and the sixth superconducting layer 360 .
本实施例中，所述多层铜稳定层可以为铜层。电缆在运行过程中，一旦所述三相高温超导通电导体10中的各超导层之间以及对地之间绝缘被破坏，巨大的短路故障电流流过导体层，使温度迅速上升进而威胁绝缘和护套。所述多层铜稳定层的敷设可以防止故障电流对电缆本体造成更大的损伤。所述多层铜稳定层在短时间内可以顺利通过巨大的故障电流而不至于产生太大的温升。各超导层的绕制以一定角度分别在所述多层铜稳定层表面绕制成螺旋形结构。当超导带材根数过多时，可以进行多层绕制，并且在超导层与层之间可以添加一层绕包层来保证绕制表面尽量平整。In this embodiment, the multi-layer copper stabilization layer may be a copper layer. During the operation of the cable, once the insulation between the superconducting layers and the ground in the three-phase high-temperature superconducting conductor 10 is damaged, a huge short-circuit fault current flows through the conductor layer, causing the temperature to rise rapidly and threatening Insulation and sheathing. The laying of the multi-layer copper stabilizing layer can prevent the fault current from causing greater damage to the cable body. The multi-layer copper stabilizing layer can smoothly pass a huge fault current in a short time without generating too much temperature rise. Each superconducting layer is wound on the surface of the multi-layer copper stable layer at a certain angle to form a helical structure. When there are too many superconducting strips, multi-layer winding can be carried out, and a wrapping layer can be added between the superconducting layers to ensure that the winding surface is as smooth as possible.
在其中一个实施例中，所述三相高温超导通电导体10还包括多层半导电层。所述多层半导电层为第一半导电层511、第二半导电层512、第三半导电层521、第四半导电层522、第五半导电层531、第六半导电层532、第七半导电层541、第八半导电层542、第九半导电层551、第十半导电层552、第十一半导电层561、第十二半导电层562、第十三半导电层571以及第十四半导电层572。In one of the embodiments, the three-phase high temperature superconducting conducting conductor 10 further includes multiple semiconducting layers. The multi-layer semiconducting layer is a first semiconducting layer 511, a second semiconducting layer 512, a third semiconducting layer 521, a fourth semiconducting layer 522, a fifth semiconducting layer 531, a sixth semiconducting layer 532, Seventh semiconductive layer 541, eighth semiconductive layer 542, ninth semiconductive layer 551, tenth semiconductive layer 552, eleventh semiconductive layer 561, twelfth semiconductive layer 562, thirteenth semiconductive layer 571 and the fourteenth semiconducting layer 572 .
所述第一半导电层511绕制于所述骨架100，并且所述第一半导电层511位于所述骨架100与所述第一绝缘层210之间。所述第二半导电层512绕制于所述第一绝缘层210，并且所述第二半导电层512位于所述第一绝缘层210与所述第一铜稳定层410之间。所述第三半导电层521绕制于所述第一超导层310，并且所述第三半导电层521位于所述第二绝缘层220与所述第一超导层310之间。所述第四半导电层522绕制于所述第二绝缘层220，并且所述第四半导电层522位于所述第二绝缘层220与所述第二铜稳定层420之间。所述第五半导电层531绕制于所述第二超导层320，并且所述第五半导电层531位于所述第三绝缘层230与所述第二超导层320之间。所述第六半导电层532绕制于所述第三绝缘层230，并且所述第六半导电层532位于所述第三绝缘层230与所述第三铜稳定层430之间。所述第七半导电层541绕制于所述第三超导层330，并且所述第七半导电层541位于所述第四绝缘层240与所述第三超导层330之间。所述第八半导电层542绕制于所述第四绝缘层240，并且第八半导电层542位于所述第四绝缘层240与所述第四铜稳定层440之间。所述第九半导电层551绕制于所述第四超导层340，并且所述第九半导电层551位于所述第五绝缘层250与所述第四超导层340之间。所述第十半导电层552绕制于所述第五绝缘层250，并且所述第十半导电层552位于所述第五绝缘层250与所述第五铜稳定层450之间。所述第十一半导电层561绕制于所述第五超导层350，并且所述第十一半导电层561位于所述第六绝缘层260与所述第五超导层350之间。所述第十二半导电层562绕制于所述第六绝缘层260，并且所述第十二半导电层562位于所述第六绝缘层260与所述第六铜稳定层460之间。所述第十三半导电层571绕制于所述第六超导层360，并且所述第十三半导电层571位于所述第七绝缘层270与所述第六超导层360之间。所述第十四半导电层572绕制于所述第七绝缘层270，并且所述第十四半导电层572和所述第十三半导电层571分别位于所述第七绝缘层270的两侧。The first semiconducting layer 511 is wound around the frame 100 , and the first semiconducting layer 511 is located between the frame 100 and the first insulating layer 210 . The second semiconducting layer 512 is wound around the first insulating layer 210 , and the second semiconducting layer 512 is located between the first insulating layer 210 and the first copper stabilization layer 410 . The third semiconducting layer 521 is wound around the first superconducting layer 310 , and the third semiconducting layer 521 is located between the second insulating layer 220 and the first superconducting layer 310 . The fourth semiconductive layer 522 is wound around the second insulating layer 220 , and the fourth semiconductive layer 522 is located between the second insulating layer 220 and the second copper stabilization layer 420 . The fifth semiconducting layer 531 is wound around the second superconducting layer 320 , and the fifth semiconducting layer 531 is located between the third insulating layer 230 and the second superconducting layer 320 . The sixth semiconductive layer 532 is wound around the third insulating layer 230 , and the sixth semiconductive layer 532 is located between the third insulating layer 230 and the third copper stabilization layer 430 . The seventh semiconducting layer 541 is wound around the third superconducting layer 330 , and the seventh semiconducting layer 541 is located between the fourth insulating layer 240 and the third superconducting layer 330 . The eighth semiconductive layer 542 is wound around the fourth insulating layer 240 , and the eighth semiconductive layer 542 is located between the fourth insulating layer 240 and the fourth copper stabilization layer 440 . The ninth semiconducting layer 551 is wound around the fourth superconducting layer 340 , and the ninth semiconducting layer 551 is located between the fifth insulating layer 250 and the fourth superconducting layer 340 . The tenth semiconductive layer 552 is wound around the fifth insulating layer 250 , and the tenth semiconductive layer 552 is located between the fifth insulating layer 250 and the fifth copper stabilization layer 450 . The eleventh semiconducting layer 561 is wound around the fifth superconducting layer 350 , and the eleventh semiconducting layer 561 is located between the sixth insulating layer 260 and the fifth superconducting layer 350 . The twelfth semiconductive layer 562 is wound around the sixth insulating layer 260 , and the twelfth semiconductive layer 562 is located between the sixth insulating layer 260 and the sixth copper stabilization layer 460 . The thirteenth semiconducting layer 571 is wound around the sixth superconducting layer 360 , and the thirteenth semiconducting layer 571 is located between the seventh insulating layer 270 and the sixth superconducting layer 360 . The fourteenth semiconductive layer 572 is wound around the seventh insulating layer 270 , and the fourteenth semiconductive layer 572 and the thirteenth semiconductive layer 571 are located on the seventh insulating layer 270 respectively. sides.
本实施例中，为防止局部电荷过于集中而导致绝缘破坏，需要在绝缘层的里外各绕制一层半导电层来均匀电场。所述半导电层可以为碳纸。In this embodiment, in order to prevent insulation damage caused by excessive concentration of local charges, it is necessary to wrap a semiconductive layer on the inside and outside of the insulating layer to even out the electric field. The semiconductive layer may be carbon paper.
在其中一个实施例中，所述三相高温超导通电导体10还包括铜屏蔽层600和保护层700。In one of the embodiments, the three-phase high temperature superconducting conductor 10 further includes a copper shielding layer 600 and a protective layer 700 .
所述铜屏蔽层600绕制于所述第八半导电层542。所述铜屏蔽层600单端或者两端接地，以形成法拉第笼。所述保护层700绕制于所述铜屏蔽层600。所述保护层700为无纺布。所述铜屏蔽层600置于所述三相高温超导通电导体10的外部，用于电磁屏蔽和接地保护。所述无纺布保护层置于所述铜屏蔽层600的外侧，用于整个三相高温超导通电导体10的结构保护。The copper shielding layer 600 is wound around the eighth semiconducting layer 542 . One or both ends of the copper shielding layer 600 are grounded to form a Faraday cage. The protection layer 700 is wound around the copper shielding layer 600 . The protective layer 700 is non-woven fabric. The copper shielding layer 600 is placed outside the three-phase high temperature superconducting conductor 10 for electromagnetic shielding and grounding protection. The non-woven protective layer is placed outside the copper shielding layer 600 for structural protection of the entire three-phase high temperature superconducting conductor 10 .
以上所述实施例的各技术特征可以进行任意的组合，为使描述简洁，未对上述实施例中的各个技术特征所有可能的组合都进行描述，然而，只要这些技术特征的组合不存在矛盾，都应当认为是本说明书记载的范围。The various technical features of the above-mentioned embodiments can be combined arbitrarily. To make the description concise, all possible combinations of the various technical features in the above-mentioned embodiments are not described. However, as long as there is no contradiction in the combination of these technical features, should be considered as within the scope of this specification.
以上所述实施例仅表达了本申请的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对申请专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本申请构思的前提下，还可以做出若干变形和改进，这些都属于本申请的保护范围。因此，本申请专利的保护范围应以所附权利要求为准。The above-mentioned embodiments only express several implementation modes of the present application, and the description thereof is relatively specific and detailed, but should not be construed as limiting the scope of the patent application. It should be noted that those skilled in the art can make several modifications and improvements without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the scope of protection of the patent application should be based on the appended claims.
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910906685.9ACN110570988A (en) | 2019-09-24 | 2019-09-24 | Three-phase high temperature superconducting conductor |
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910906685.9ACN110570988A (en) | 2019-09-24 | 2019-09-24 | Three-phase high temperature superconducting conductor |
| Publication Number | Publication Date |
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| CN110570988Atrue CN110570988A (en) | 2019-12-13 |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910906685.9APendingCN110570988A (en) | 2019-09-24 | 2019-09-24 | Three-phase high temperature superconducting conductor |
| Country | Link |
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| CN (1) | CN110570988A (en) |
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| RJ01 | Rejection of invention patent application after publication | Application publication date:20191213 |