CN110556793B - Real-time IGBT overload protection method - Google Patents
Real-time IGBT overload protection methodDownload PDFInfo
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- CN110556793B CN110556793BCN201910803612.7ACN201910803612ACN110556793BCN 110556793 BCN110556793 BCN 110556793BCN 201910803612 ACN201910803612 ACN 201910803612ACN 110556793 BCN110556793 BCN 110556793B
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- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H5/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection
- H02H5/04—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection responsive to abnormal temperature
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
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Abstract
Description
Technical Field
The invention relates to the field of safety control of motor drivers, in particular to a real-time IGBT overload protection method.
Background
An IGBT (Insulated Gate Bipolar Transistor) is a power Transistor device that weakly controls a strong current. In the operation of the motor, when the motor driving system is overloaded, the current of the power tube device rises in a short time, the motor loses control, even a fire hazard or the like is caused, and the IGBT needs to be protected in time.
At present, the protection method for the IGBT device in the motor drive system includes: the over-temperature protection implementation mode is as follows: the frequency converter realizes over-temperature protection through an NTC temperature sensor of the IGBT device, and the NTC is generally integrated on a copper substrate of the IGBT device and reflects the temperature of a shell of the IGBT device. However, the NTC cannot directly reflect the temperature of the IGBT chip, and due to the influence of heat capacity on the thermal path, the accuracy of implementing over-temperature protection by the NTC is poor, and under the condition of fast overload, the NTC is correspondingly slow, which easily causes over-temperature damage to the IGBT. The overload protection implementation mode is as follows: through an inverse time limit overload curve, such as 180% overload, 60s report overload; 150% overload,report overload 3 minutes. Overload protection can be effectively realized under a single overload working condition by an overload protection realizing mode, but overload or over-temperature explosion machines are easily reported by mistake under the switching condition of various overload working conditions. For example, 150% overload is carried out for 2 minutes, the overload reporting requirement is not met, then 180% overload working conditions continue to appear, the radiator temperature is already high due to the fact that 150% overload is caused, overload is reported only after 180% overload is carried out for 60 seconds, and the problems of over-temperature and even explosion and the like can occur.
Therefore, the problems of poor over-temperature protection precision and slow response to rapid overload exist in the existing overload protection of the IGBT device; the problem that effective protection cannot be realized and the machine is easy to overheat or even explode under the condition that various overload working conditions occur simultaneously; the current design level is high, and the cost of the IGBT is increased.
Disclosure of Invention
The problem that the over-temperature protection precision is poor and the response to rapid overload is slow in the current IGBT device overload protection is solved; the situation that multiple overload working conditions occur simultaneously cannot be effectively protected, and the problem that the motor is over-temperature and even explodes easily occurs; the current design level is high, and the cost of the IGBT is increased. The invention adopts the following technical scheme to solve the problems:
the application provides a real-time IGBT overload protection method, which comprises the following steps: acquiring information related to the operation of the IGBT module as operation information, wherein the operation information comprises current information and voltage information; respectively determining the heat loss of an IGBT switching tube and the heat loss of a diode in the IGBT module according to the operation information; calculating the junction temperature and the shell temperature of the IGBT module according to the heat loss of the IGBT switching tube and the heat loss of the diode; and comparing the temperature values represented by the junction temperature and the shell temperature with a preset junction temperature threshold value and a preset shell temperature threshold value respectively, and determining that the IGBT module is overloaded when the junction temperature is greater than the junction temperature threshold value or the shell temperature is greater than the shell temperature threshold value, so as to perform overload protection on the IGBT module.
In some examples, the step of determining the heat loss of the IGBT switching tubes and the heat loss of the diodes in the IGBT module according to the operation information includes: determining the heat consumption of an IGBT switching tube in a rectifying unit of the IGBT module according to the current information and the modulation ratio information; and determining the thermal loss of an IGBT switching tube in the inversion unit of the IGBT module according to the current information and the information related to the modulation of the IGBT module.
In some examples, the "determining the IGBT switching tube thermal loss in the rectifier cell of the IGBT module according to the current information and the modulation ratio information" includes determining the IGBT switching tube thermal loss of the rectifier bridge cell by the following formula:
wherein, Ploss(rec)Represents the thermal loss of the IGBT switching tube of the rectifying unit,
the power factor of the motor is represented, M represents modulation ratio information, I represents output current of the IGBT, and f (x) is a function representing the relation between heat loss and the modulation ratio, current and power factor.
In some examples, the "determining IGBT switch tube thermal losses in the inverter unit of the IGBT module based on the current information and the information related to the modulation of the IGBT module" includes determining IGBT switch tube thermal losses in the inverter unit by the following formula:
wherein, Ploss(inv)For thermal losses of IGBT switching tubes in the inverter unit, KTmp_pIs a temperature coefficient, Kvdc_pIs the bus voltage coefficient, Kfsw_pIs the carrier frequency coefficient, Kf_pOutput frequency coefficient, KM_pIn order to be able to modulate the coefficients,
for power factor coefficients, g (i) is a function of current, representing a relationship between loss and current.
In some examples, the method includes determining the thermal loss of the IGBT switching tube by the following formula:
Ploss(IGBT)＝Ploss(inv)+Ploss(rec)
wherein, Ploss(IGBT)For the above-mentioned heat loss of the IGBT switching tube, Ploss(inv)For heat losses in the above-mentioned GBT switching tubes in the inverter unit, Ploss(rec)The heat loss of the IGBT switching tube in the rectifying unit is avoided.
In some examples, the junction temperature and the case temperature of the IGBT module include junction temperature and case temperature of an IGBT switching tube, and the "calculating the junction temperature and the case temperature of the IGBT module according to the heat loss of the IGBT switching tube and the heat loss of the diode" includes the step of calculating the junction temperature of the IGBT module: determining the heating temperature of the IGBT switch chip according to the heat loss of the IGBT switch tube and the thermal resistance between the IGBT switch chip and a radiator; and determining the junction temperature of the IGBT switch tube according to the heating temperature of the IGBT switch tube chip and the environmental accumulated temperature.
In some examples, the junction temperature and the case temperature of the IGBT module include a junction temperature and a case temperature of an IGBT switching tube, and the "calculating the junction temperature and the case temperature of the IGBT module according to the heat loss of the IGBT switching tube and the heat loss of the diode" includes the step of calculating the case temperature of the IGBT switching tube: determining the heating temperature of the IGBT switch tube shell according to the heat loss of the IGBT switch tube and the thermal resistance between the IGBT switch tube shell and a radiator; and determining the shell temperature of the IGBT switch tube according to the heating temperature of the shell of the IGBT switch tube and the environmental accumulated temperature.
In some examples, the step of calculating the junction temperature of the IGBT module includes calculating the junction temperature of the IGBT module using the following formula:
Tj(IGBT)＝Th+Ploss(IGBT)Rjh(IGBT)
wherein, Tj(IGBT)The junction temperature, T, of the IGBT switching tubehIs the temperature of the radiator, Ploss(IGBT)For the above-mentioned heat loss of the IGBT switching tube, Rjh(IGBT)Is the IGBT switchThermal resistance between the die and the heat spreader.
In some examples, the step of calculating the case temperature of the IGBT module includes calculating the case temperature of the IGBT switching tube using the following formula:
Tq(IGBT)＝Th+Ploss(IGBT)Rqh(IGBT)
wherein, Tq(IGBT)The shell temperature, T, of the IGBT switching tubehAccumulation of temperature in the environment, Ploss(IGBT)For the above-mentioned heat loss of the IGBT switching tube, Rqh(IGBT)The thermal resistance between the IGBT switch tube shell and the radiator is realized.
According to the real-time IGBT overload protection method, the heat loss of the IGBT module is determined through the obtained output current of the IGBT switch tube, the junction temperature and the shell temperature of the IGBT switch tube are calculated by utilizing the thermal resistance between the IGBT switch tube chip and the radiator and the thermal resistance between the shell and the radiator, the junction temperature and the shell temperature are compared with the preset junction temperature threshold and the preset shell temperature threshold, and whether the IGBT module is in thermal overload or not is judged. The temperature of the IGBT module is directly calculated based on real-time current information and temperature information, the temperature accumulated by the power tube and the influence factor of the ambient temperature of the power tube on the heat loss are added in the process of calculating the heat loss, and the junction temperature and the shell temperature of the power tube are closer to the real temperature, so that the over-temperature protection and the overload protection of the IGBT module are realized; under the condition of not increasing the current design grade, the cost is reduced, and the overload capacity of the IGBT is exerted to the maximum extent.
Drawings
Fig. 1 is a schematic diagram of an exemplary system architecture in an embodiment of a real-time IGBT overload protection method;
fig. 2 is a schematic diagram of steps in an embodiment of a real-time IGBT overload protection method according to the present application.
Detailed Description
Preferred embodiments of the present invention are described below with reference to the accompanying drawings. It should be understood by those skilled in the art that these embodiments are only for explaining the technical principle of the present invention, and are not intended to limit the scope of the present invention.
It should be noted that the embodiments and features of the embodiments in the present application may be combined with each other without conflict. The present application will be described in detail below with reference to the embodiments with reference to the attached drawings.
Fig. 1 shows an exemplary system architecture to which embodiments of the real-time IGBT overload protection method of the present application may be applied. As shown in fig. 1, the system includes a controller, a motor driver, a motor, and a sensing device. The controller is connected with the motor driver and the sensing device through a CAN bus and exchanges information; the motor is connected with the motor driver, and the operation of the motor is controlled through the output of the motor driver.
The motor driver is an IGBT module that converts voltage, frequency, and the like of a power supply, and controls the magnitude of voltage and frequency applied to a motor connected to the IGBT module by turning on and off the IGBT module, thereby implementing various operation modes such as starting, stopping, acceleration and deceleration of the motor. The IGBT module comprises a shell, and a rectifying unit and an inverting unit which are arranged in the shell, wherein power tubes of the rectifying unit and the inverting unit mainly comprise IGBT switch tubes and/or diodes which are used as power tubes. The output voltage and frequency of the IGBT module are controlled by controlling the on-off of the IGBT switching tube and/or the diode.
The sensing devices can be various sensors for collecting state information of each device or equipment in the elevator system and information related to the operation of the elevator system. For example, a sensor for acquiring the rotation speed of the motor, a motor torque sensor, a voltage sensor for acquiring the output voltage of the IGBT module, a current sensor for acquiring the output current of the IGBT module, a temperature sensor for acquiring the temperature of the IGBT module, and the like.
The controller can be a master device for controlling the starting, speed regulation, braking and reversing of the motor by changing the wiring of the main circuit or the control circuit and changing the resistance value in the circuit according to a preset sequence; the computer system also can be an operating device which is composed of a program counter, an instruction register, an instruction decoder, a time sequence generator and an operation controller and is used for coordinating and commanding the whole computer system. Specifically, the controller may be a control system having a microprocessor, such as a one-chip microcomputer control system, a plc control system, or the like.
Furthermore, in the present application, the overload protection of the real-time IGBT is an over-temperature protection or an over-temperature protection for the IGBT module, that is, an over-temperature protection or an over-temperature protection is performed for an IGBT switch tube and/or a diode serving as a power device tube in the IGBT module.
With continuing reference to the figures, fig. 2 shows a schematic step diagram of an embodiment of a real-time IGBT overload protection method applied in the present application. As shown in fig. 2, the real-time IGBT overload protection method includes the following steps:
In the present embodiment, the controller acquires information related to the operation of the IGBT module as the operation information through the sensing device connected thereto. The operation information includes current information and voltage information. The current information can be information of three-phase current output to the motor by an inverter unit in the IGBT module, and can also be information of current output to a direct current bus by a rectifier unit; the voltage information is information of the voltage output to the motor by the IGBT module. The operation information may also be temperature information, such as temperature information of the motor, ambient temperature information, temperature information of the IGBT module heat sink, and the like. The operation information may also be information such as the on-off frequency, the current junction temperature, the operation frequency, and the modulation factor of the IGBT module.
And 2, respectively determining the heat loss of the IGBT switching tube and the heat loss of the diode in the IGBT module according to the operation information.
In this embodiment, based on the operation information of the IGBT module obtained instep 1, the controller calculates the heat loss of the IGBT switching tube and the heat loss of the diode in the IGBT module using the coefficient specific to the IGBT module and the operation information.
The thermal overload of the IGBT module is caused by the heat generated by the power tube of the rectifier unit and/or the inverter unit, and specifically, the heat generated by the IGBT switch tube and/or the diode serving as the power tube in the working process cannot be discharged or cooled in time, which causes the IGBT switch tube and/or the diode device to overheat, which may cause the IGBT module to fail to work normally or burn out the IGBT module.
In some optional implementations of the present embodiment, the heat loss of the IGBT switching tube includes heat loss of the IGBT switching tube in the rectifier unit and heat loss of the IGBT switching tube in the inverter unit. The step of determining the heat loss of the IGBT switching tube and the heat loss of the diode in the IGBT module according to the operation information includes:
determining the thermal loss of an IGBT switching tube in a rectifying unit of the IGBT module according to current information and modulation ratio information in the operation information; and determining the thermal loss of an IGBT switching tube in the inversion unit of the IGBT module according to the current information and the information related to the modulation of the IGBT module.
The information related to modulation of the IGBT module is information related to a PWM signal when the IGBT switching tube is turned on or off. Such as temperature coefficient of the switching device, bus voltage coefficient, carrier frequency coefficient of the PWM signal, modulation coefficient of the PWM signal, power factor coefficient, etc.
In some optional implementations of this embodiment, the step of "determining the thermal loss of the IGBT switch tube in the rectifying unit according to the current information and the modulation ratio information" includes determining by the following formula:
in the above formula (1), Ploss(rec)Represents the thermal loss of the IGBT switch tube in the rectifying unit,
the power factor of the motor is represented, M represents modulation ratio information, I represents output current of the IGBT module, and f (x) is a function representing the relation between heat loss and the modulation ratio, current and power factor; the parameters related to the IGBT can be obtained by curve fitting according to specifications.
In some optional implementations of this embodiment, the "determining the thermal loss of the IGBT switching tube in the inverter unit of the IGBT module according to the current information and the information related to the modulation of the IGBT module" includes determining the thermal loss of the IGBT switching tube in the inverter unit according to the following formula:
in the above formula (2), Ploss(inv)For heat loss of IGBT switching tube of inverter unit, KTmp_pIs a temperature coefficient, Kvdc_pIs the bus voltage coefficient, Kfsw_pIs the carrier frequency coefficient, Kf_pTo output the frequency coefficient, KM_pIn order to be able to modulate the coefficients,
for power factor coefficients, g (I) is a function of current. Specifically, the current function g (i) is a functional relationship between the output current of the IGBT module and the loss of the IGBT switching tube, and may be obtained by querying a table or a function curve set in advance, and in this embodiment, is obtained by curve fitting of an IGBT specification. Each coefficient KTmp_p、Kvdc_p、Kfsw_p、Kf_p、KM_pAnd
the characteristic of the motor and the IGBT module is obtained through the parameters of the motor and the IGBT module.
In some optional implementations of this embodiment, the loss of the IGBT switching tube is a sum of a total loss of the IGBT switching tube in the inverter unit and a total loss of the IGBT switching tube in the rectifier unit of the IGBT module. Specifically, it can be expressed by the following formula:
Ploss(IGBT)＝Ploss(inv)+Ploss(rec) (3)
in the above formula (3), Ploss(IGBT)For the total heat loss, P, of the IGBT switching tubes in the IGBT moduleloss(inv)For thermal loss of IGBT switch tube in inverter unit, Ploss(rec)The thermal loss of the IGBT switch tube in the rectifying unit is avoided.
And 3, calculating the junction temperature and the shell temperature of the IGBT module according to the heat loss of the IGBT switching tube and the heat loss of the diode.
In this embodiment, the junction temperature and the case temperature of the IGBT switching tube in the IGBT module may be calculated based on the heat loss of the IGBT switching tube and the heat loss of the diode determined in step 2, so as to obtain the junction temperature and the case temperature of the diode. Here, the heat loss of the IGBT switching tube is the sum of the heat losses of the IGBT switching tube in the rectifying unit and the inverter unit in the IGBT module. Similarly, the heat loss of the diode is the sum of the heat losses of the diode in the rectification unit and the diode in the inversion unit in the IGBT module
In some optional implementations of this embodiment, the calculating step of calculating the junction temperature and the case temperature of the IGBT module includes: determining the heating temperature of the IGBT switch chip according to the heat loss of the IGBT switch tube and the thermal resistance between the IGBT switch chip and a radiator; and determining the junction temperature of the IGBT switch tube according to the heating temperature of the IGBT switch tube chip and the environmental accumulated temperature. Specifically, the junction temperature of the IGBT switching tube may be calculated by the following formula:
Tj(IGBT)＝Th+Ploss(IGBT)Rjh(IGBT) (4)
wherein, Tj(IGBT)The junction temperature, T, of the IGBT switching tubehAccumulation of temperature in the environment, Ploss(IGBT)For the above-mentioned heat loss of the IGBT switching tube, Rjh(IGBT)The thermal resistance between the IGBT switching chip and the heat sink is described above.
The shell temperature of the IGBT switching tube can be calculated by the following formula:
Tq(IGBT)＝Th+Ploss(IGBT)Rqh(IGBT) (5)
in the above formula (5), Tq(IGBT)Is the shell temperature, T, of the IGBT switching tubehAccumulation of temperature in the environment, Ploss(IGBT)For the heat losses of all IGBT switching tubes in the above-mentioned IGBT module, Rqh(IGBT)Is the thermal resistance between the IGBT switch tube shell and the radiator。
And 4, comparing the temperature values represented by the junction temperature and the shell temperature with a preset junction temperature threshold value and a preset shell temperature threshold value respectively, and determining that the IGBT module is overloaded when the junction temperature is greater than the junction temperature threshold value or the shell temperature is greater than the shell temperature threshold value, so as to perform overload protection on the IGBT module.
In this embodiment, the junction temperature and the case temperature determined in theabove step 3 are respectively compared with preset values. And determining whether the IGBT module is overloaded or not according to the comparison result, and performing thermal protection if the IGBT module is overloaded. Specifically, the junction temperature and the shell temperature are respectively compared with a preset junction temperature threshold and a preset shell temperature threshold, and if any one of the junction temperature and the shell temperature exceeds the preset threshold, the possibility of burning out the IGBT module is indicated. Therefore, when the junction temperature is greater than the junction temperature threshold value or the shell temperature is greater than the shell temperature threshold value, it is determined that the IGBT module is overloaded, and overload protection is performed on the IGBT module.
It should be noted that, in the present application, the switching tube device of the IGBT module may be a fully controllable IGBT module formed by all IGBT switching tubes, or a fully semi-controllable IGBT module formed by all IGBT switching tubes and diodes. In the embodiment of the present application, the calculation process of the junction temperature and the case temperature of the IGBT switch tube in the IGBT module is described. Determining the heat loss of the diode according to the operation information based on the same calculation process; the total loss of an inverter unit and the total loss of a rectifier unit of a diode in the IGBT module can be calculated according to a formula (1) and a formula (2); the heat loss P of the diode is calculated by the formula (6)loss(Diode)(ii) a Wherein, the formula (4) is:
Ploss(Diode)＝Ploss(inv)+Ploss(rec) (6)
in the above formula (6), Ploss(Diode)For heat loss of the diode, Ploss(inv)For heat loss of diodes in the inverter unit, Ploss(rec)Is the diode heat loss in the rectifying unit.
Calculating junction temperature and shell temperature of the diode according to heat loss of the diode and ambient temperature and thermal resistance; specifically, similar to the calculation of the junction temperature and the shell temperature of the IGBT switching tube, the junction temperature of the diode can be determined by the following formula:
Tj(Diode)＝Th+Ploss(Diode)Rjh(Diode) (7)
wherein, in the above formula (7), Tj(Diode)Is the junction temperature of the diode, ThAccumulated temperature of the environment in which the diode is located, Ploss(Diode)For the heat loss of the diode as a power tube in the process of switching the tube, Rjh(Diode)Is the thermal resistance between the diode chip and the heat sink.
Similarly, the case temperature of the diode can be calculated by the following formula:
Tq(Diode)＝Th+Ploss(Diode)Rqh(Diode) (8)
wherein, in the above formula (8), Tq(Diode)Is the shell temperature, T, of the diodehAccumulated temperature of the environment in which the diode is located, Ploss(Diode)For the heat loss of the diode as a power tube in the on-off process, Rqh(Diode)Is the thermal resistance between the housing of the diode and the heat sink.
And (3) comparing the junction temperature and the shell temperature of the diode calculated by the formula (7) and the formula (8) with the junction temperature threshold value and the shell temperature threshold value respectively, and determining the thermal overload of the IGBT module if the junction temperature of the diode is greater than the junction temperature threshold value or the shell temperature of the diode is greater than the shell temperature threshold value.
In the present application, the above-mentioned ambient temperature ThThe temperature difference between the ambient temperature and the temperature difference between the power tube device and the ambient temperature can be determined, and specifically:
wherein, in the above formula (9), ThAccumulated temperature for the environment, TaIs the ambient temperature, Δ ThaIs the difference between ambient temperature and heat sink, Δ Tha(k)Is the temperature difference between the k-th order ambient temperature and the heat sink, k is the temperature from the heat sink to the ambient temperatureDegree dynamic thermal resistance order. Specifically, one calculation of 2ms may be set in the program.
In the embodiment of the application, the heat loss of the IGBT module is determined by collecting the input and/or output current of the IGBT module, the junction temperature and the shell temperature of the IGBT switch tube are calculated by using the calculated heat loss, the thermal resistance between the IGBT switch tube chip and a radiator and the thermal resistance between the shell and the radiator, and the junction temperature and the shell temperature are compared with the preset junction temperature threshold and the preset shell temperature threshold to judge whether the IGBT module is thermally overloaded. Compared with the prior art, the method has the following beneficial effects:
calculating the heat loss of the IGBT module based on real-time current information and temperature information, directly calculating the temperature of the IGBT chip by the heat loss to realize over-temperature protection and overload protection of the IGBT module, adding the temperature accumulated by the power tube and the influence factor of the environment temperature of the power tube on the heat loss in the process of calculating the heat loss, and enabling the junction temperature and the shell temperature of the power tube to be closer to the real temperature, so that the temperature of the IGBT module is reduced; under the condition of not increasing the current design grade, the cost is reduced, and the overload capacity of the IGBT is exerted to the maximum extent.
So far, the technical solutions of the present invention have been described in connection with the preferred embodiments shown in the drawings, but it is easily understood by those skilled in the art that the scope of the present invention is obviously not limited to these specific embodiments. Equivalent changes or substitutions of related technical features can be made by those skilled in the art without departing from the principle of the invention, and the technical scheme after the changes or substitutions can fall into the protection scope of the invention.
Claims (7)
1. A real-time IGBT overload protection method is characterized by comprising the following steps:
acquiring information related to the operation of the IGBT module as operation information, wherein the operation information comprises current information and voltage information;
determining the heat loss of an IGBT switching tube in the IGBT module and the heat loss of a diode respectively according to the operation information, wherein the step of determining the heat loss of the IGBT switching tube in the IGBT module respectively according to the operation information comprises the step of determining the heat loss of the IGBT switching tube in an inversion unit of the IGBT module according to the current information and information related to the modulation of the IGBT module; wherein, the heat loss of the IGBT switching tube in the inverter unit is determined by the following formula:
wherein, Ploss(inv)For heat loss of IGBT switching tube in inverter unit, KTmp_pIs a temperature coefficient, Kvdc_pIs the bus voltage coefficient, Kfsw_pIs the carrier frequency coefficient, Kf_pOutput frequency coefficient, KM_pIn order to be able to modulate the coefficients,
is a power factor coefficient, g (I) is a preset current function, and represents a function of the relation between loss and current;
calculating junction temperature and shell temperature of the IGBT module according to heat loss of the IGBT switching tube and heat loss of the diode;
and comparing the temperature values represented by the junction temperature and the shell temperature with a preset junction temperature threshold value and a preset shell temperature threshold value respectively, and determining that the IGBT module is overloaded when the junction temperature is greater than the junction temperature threshold value or the shell temperature is greater than the shell temperature threshold value, so as to perform overload protection on the IGBT module.
2. The real-time IGBT overload protection method according to claim 1, wherein the heat loss of the IGBT switching tubes further includes heat loss of the IGBT switching tubes in the rectifier unit, and the step of "determining the heat loss of the IGBT switching tubes and the heat loss of the diodes in the IGBT module respectively according to the operation information" includes:
determining the heat consumption of an IGBT switching tube in a rectifying unit of the IGBT module according to the current information and the modulation ratio information; the thermal loss of an IGBT switching tube in the rectifying unit is determined by the following formula:
wherein, Ploss(rec)Represents the thermal loss of the IGBT switch tube in the rectifying unit,
the power factor of the motor is represented, M represents modulation ratio information, I represents the output current of the IGBT, and f (x) is a function representing the relation between heat loss and current, modulation ratio and power factor.
3. The real-time IGBT overload protection method according to claim 2, comprising determining the thermal losses of the IGBT switching tubes by the formula:
Ploss(IGBT)＝Ploss(inv)+Ploss(rec)
wherein, Ploss(IGBT)For heat loss of the IGBT switching tube, Ploss(inv)For thermal loss of IGBT switch tube in inverter unit, Ploss(rec)The thermal loss of the IGBT switch tube in the rectifying unit is avoided.
4. The real-time IGBT overload protection method according to claim 1, wherein the junction temperature and the case temperature of the IGBT module include a junction temperature and a case temperature of an IGBT switching tube, and the calculating the junction temperature and the case temperature of the IGBT module according to the heat loss of the IGBT switching tube and the heat loss of the diode includes the step of calculating the junction temperature of the IGBT module:
determining the heating temperature of the IGBT switch chip according to the heat loss of the IGBT switch tube and the thermal resistance between the IGBT switch chip and a radiator;
and determining the junction temperature of the IGBT switch tube according to the heating temperature of the IGBT switch tube chip and the environment accumulated temperature.
5. The real-time IGBT overload protection method according to claim 1, wherein the junction temperature and the case temperature of the IGBT module include a junction temperature and a case temperature of an IGBT switching tube, and the calculating the junction temperature and the case temperature of the IGBT module according to the heat loss of the IGBT switching tube and the heat loss of the diode includes the step of calculating the case temperature of the IGBT switching tube:
determining the heating temperature of the IGBT switch tube shell according to the heat loss of the IGBT switch tube and the thermal resistance between the IGBT switch tube shell and a radiator;
and determining the shell temperature of the IGBT switch tube according to the heating temperature of the IGBT switch tube shell and the environmental accumulated temperature.
6. The real-time IGBT overload protection method according to claim 4, wherein the step of calculating the junction temperature of the IGBT module comprises calculating the junction temperature of the IGBT switching tube by using the following formula:
Tj(IGBT)＝Th+Ploss(IGBT)Rjh(IGBT)
wherein, Tj(IGBT)Is the junction temperature, T, of the IGBT switching tubehAccumulation of temperature in the environment, Ploss(IGBT)For heat losses of the IGBT switching tubes, Rjh(IGBT)The thermal resistance between the IGBT switch chip and the radiator.
7. The real-time IGBT overload protection method according to claim 5, wherein the step of calculating the shell temperature of the IGBT module comprises calculating the shell temperature of the IGBT switching tube by using the following formula:
Tq(IGBT)＝Th+Ploss(IGBT)Rqh(IGBT)
wherein, Tq(IGBT)Is the shell temperature, T, of the IGBT switching tubehAccumulation of temperature in the environment, Ploss(IGBT)For heat losses of the IGBT switching tubes, Rqh(IGBT)The thermal resistance between the IGBT switch tube shell and the radiator.
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| CN113258912B (en)* | 2021-04-29 | 2024-05-03 | 珠海格力电器股份有限公司 | Control device and method of switching tube and electrical equipment |
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