CN110556454B - Nitride epitaxial structure grown on silicon base substrate and its growth method - Google Patents
Nitride epitaxial structure grown on silicon base substrate and its growth methodDownload PDFInfo
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- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
- H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
- H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
- H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
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Abstract
Translated fromChinese
Description
Technical Field
The present application relates to the field of semiconductor technology, and more particularly, to a nitride epitaxial structure grown on a silicon-based substrate and a method for growing the same.
Background
Nitride-related devices have received increasing attention due to the wide range of applications for Light Emitting Diodes (LEDs) and power electronics. Nitride devices can be epitaxially grown on a variety of substrates including silicon, silicon carbide, sapphire and gallium nitride substrates, but large-size (8 inch and above) silicon-based gallium nitride materials are increasingly used in view of the advantages of low cost, compatibility with CMOS processes, and the like.
However, compared with the small-size (2-6 inch) wafer, the growth of the large-size silicon-based gallium nitride is much more difficult, mainly because the lattice constants and thermal expansion coefficients of gallium nitride and silicon are greatly adapted to reach 16.9% and 54%, respectively, and therefore, in order to prepare the epitaxial wafer without plastic deformation and cracks, the stress balance in the high-temperature growth and cooling processes needs to be well controlled.
For gallium nitride based power devices, the breakdown voltage generally increases with the thickness of the buffer layer, and thus the buffer layer needs to be thicker if a device with a large breakdown voltage is to be obtained. On the other hand, a thicker buffer layer can improve the crystal lattice quality of the epitaxial material, which is also helpful for the LED device.
For silicon-based gallium nitride epitaxial growth, if gallium nitride directly grows on a silicon substrate, gallium and silicon directly react to form a melt-back effect, so that an aluminum nitride nucleation layer grows on the silicon substrate, the effect can be avoided, and meanwhile, compressive stress can be introduced into a film grown next; in addition, compressive stress is introduced by adding an Al (Ga) N insertion layer in the growth of the gallium nitride epitaxial layer, so that sufficient compressive stress is caused in the high-temperature growth process and the tensile stress is kept in balance in the cooling process.
It should be noted that the above background description is only for the convenience of clear and complete description of the technical solutions of the present application and for the understanding of those skilled in the art. Such solutions are not considered to be known to the person skilled in the art merely because they have been set forth in the background section of the present application.
Disclosure of Invention
The inventors of the present application have found that it is sometimes difficult to conveniently adjust the compressive stress during the growth of the nitride epitaxial structure in the prior art manner.
The application provides a nitride epitaxial structure growing on a silicon-based substrate and a growing method thereof, which can carry out strain regulation and control on the epitaxial structure by adjusting the component proportion of mixed carrier gas in the process of generating a nucleating layer and/or an inserting layer, thereby obtaining a thicker nitride epitaxial layer structure with good quality.
According to an aspect of embodiments of the present application, there is provided a method of growing a nitride epitaxial structure on a silicon-based substrate by supplying a reactant gas and a carrier gas for carrying the reactant gas into a reaction chamber, the method comprising:
growing a nitride nucleating layer on the surface of the silicon-based substrate;
growing a nitride buffer layer on the surface of the nitride nucleation layer; and
sequentially growing a predetermined number of stacked layers of a nitride insertion layer and a nitride buffer layer on the surface of the nitride buffer layer, wherein in each of the stacked layers, the nitride buffer layer is grown on the surface of the nitride insertion layer, and the nitride insertion layer of the previous stacked layer is grown on the surface of the nitride buffer layer of the next stacked layer, the carrier gas is a mixed gas containing at least two gases, and in the step of growing the nitride nucleation layer and/or the nitride insertion layer, the composition ratio of each gas in the carrier gas is adjusted to control the compressive stress generated in the nitride buffer layer in the step of generating the nitride buffer layer on the surface of the nucleation layer and/or the nitride insertion layer.
According to another aspect of an embodiment of the present application, wherein the compressive stress is less than a stress that plastically deforms the silicon-based substrate.
According to another aspect of an embodiment of the present application, wherein in the step of growing the nitride nucleation layer or in the step of growing each nitride insertion layer, the composition ratio of each gas in the carrier gas is adjusted based on a predetermined composition ratio of each gas with respect to time.
According to another aspect of the embodiments of the present application, wherein the relationship is the same or different for each step of growing the nitride insertion layer.
According to another aspect of an embodiment of the present application, wherein the step of growing the nitride nucleation layer corresponds to the same or different relationship as the step of growing the nitride insertion layer.
According to another aspect of the embodiments of the present application, wherein the crystal plane of the surface of the silicon-based substrate is a Si (111) plane.
According to another aspect of an embodiment of the present application, wherein the carrier gas is nitrogen (N)2) And hydrogen (H)2) The mixed gas of (1).
According to another aspect of embodiments of the present application, there is provided a nitride epitaxial structure grown on a silicon-based substrate by supplying a reactant gas and a carrier gas for carrying the reactant gas into a reaction chamber, the nitride epitaxial structure comprising:
a nitride nucleating layer growing on the surface of the silicon substrate;
a nitride buffer layer grown on the surface of the nitride nucleation layer; and
and a predetermined number of stacked layers of a nitride insertion layer and a nitride buffer layer sequentially grown on the surface of the nitride buffer layer, wherein in each of the stacked layers, the nitride buffer layer is grown on the surface of the nitride insertion layer, and the nitride insertion layer of the previous stacked layer is grown on the surface of the nitride buffer layer of the next stacked layer, the carrier gas is a mixed gas containing at least two gases, and in the step of growing the nitride nucleation layer and/or the nitride insertion layer, the composition ratio of each gas in the carrier gas is adjusted so that a compressive stress is introduced in the nitride buffer layer in the step of growing the nitride buffer layer on the surface of the nucleation layer and/or the nitride insertion layer.
The beneficial effect of this application lies in: by adjusting the component proportion of mixed carrier gas in the process of generating the nucleation layer and/or the insertion layer, the strain control can be carried out on the epitaxial structure, and the thicker nitride epitaxial layer structure with good quality can be obtained.
Specific embodiments of the present application are disclosed in detail with reference to the following description and drawings, indicating the manner in which the principles of the application may be employed. It should be understood that the embodiments of the present application are not so limited in scope. The embodiments of the application include many variations, modifications and equivalents within the spirit and scope of the appended claims.
Features that are described and/or illustrated with respect to one embodiment may be used in the same way or in a similar way in one or more other embodiments, in combination with or instead of the features of the other embodiments.
It should be emphasized that the term "comprises/comprising" when used herein, is taken to specify the presence of stated features, integers, steps or components but does not preclude the presence or addition of one or more other features, integers, steps or components.
Drawings
The accompanying drawings, which are included to provide a further understanding of the embodiments of the application, are incorporated in and constitute a part of this specification, illustrate embodiments of the application and together with the description serve to explain the principles of the application. It is obvious that the drawings in the following description are only some embodiments of the application, and that for a person skilled in the art, other drawings can be derived from them without inventive effort. In the drawings:
fig. 1 is a schematic view of a method of growing a nitride epitaxial structure on a silicon-based substrate according to an embodiment of the present application;
fig. 2 (a), (B), (C), (D) show the component ratios of the respective gases in the carrier gas as a function of time;
fig. 3 is a schematic view of a nitride epitaxial structure according to an embodiment of the present application;
figure 4 is a graphical representation of the curvature as a function of growth time for the 3 samples tested in situ.
Detailed Description
The foregoing and other features of the present application will become apparent from the following description, taken in conjunction with the accompanying drawings. In the description and drawings, particular embodiments of the application are disclosed in detail as being indicative of some of the embodiments in which the principles of the application may be employed, it being understood that the application is not limited to the described embodiments, but, on the contrary, is intended to cover all modifications, variations, and equivalents falling within the scope of the appended claims.
Example 1
Theembodiment 1 of the present application provides a method for growing a nitride epitaxial structure on a silicon-based substrate, in which a reactant gas and a carrier gas for carrying the reactant gas are introduced into a reaction chamber, so as to grow the nitride epitaxial structure on the silicon-based substrate.
Fig. 1 is a schematic diagram of a method for growing a nitride epitaxial structure on a silicon-based substrate according to the present embodiment, as shown in fig. 1, the method comprising:
and 103, sequentially growing a preset number of stacked layers consisting of the nitride insertion layer and the nitride buffer layer on the surface of the nitride buffer layer.
In this embodiment, in each of the stacked layers, the nitride buffer layer is grown on the surface of the nitride insertion layer, and the nitride insertion layer of the previous stacked layer is grown on the surface of the nitride buffer layer of the next stacked layer.
In this embodiment, the predetermined number of stacked layers may be determined according to the total thickness of the nitride epitaxial structure to be obtained.
In this embodiment, the carrier gas may be a mixed gas containing at least two gases, and in the step of growing the nitride nucleation layer and/or the nitride insertion layer, the composition ratio of each gas in the carrier gas may be adjusted so as to introduce a compressive stress in the nitride buffer layer in the step of growing the nitride buffer layer on the surface of the nucleation layer and/or the nitride insertion layer, so as to completely or partially counteract the tensile stress during the cooling process and prevent the silicon-based substrate from being plastically deformed.
In the present embodiment, the component ratio of each gas in the carrier gas may be a volume component ratio, a mass component ratio, a flow component ratio, or the like of each gas. Of course, the present embodiment may not be limited thereto, and may have other component ratios.
According to the embodiment, by adjusting the component ratio of the mixed carrier gas in the process of generating the nucleation layer and/or the insertion layer, the compressive stress generated in the nitride buffer layer in the step of generating the nitride buffer layer on the surface of the nucleation layer and/or the nitride insertion layer can be controlled, so that enough compressive stress can be generated in the nitride buffer layer in the process of growing the nitride buffer layer, the tensile stress in the cooling process can be offset, and the crystal quality of the epitaxial layer can be improved. For example, the method of the embodiment can epitaxially grow a thicker (>5um) and crack-free nitride epitaxial structure on a large-size (8 inches and above) silicon wafer, and the epitaxial structure has high lattice quality and good surface morphology.
In this embodiment, by adjusting the component ratio of the carrier gas, the stress after the compressive stress generated during the growth of the nitride buffer layer and the tensile stress during the temperature reduction act against each other is controlled to be smaller than the stress that causes the silicon-based substrate to undergo plastic deformation, thereby preventing the silicon-based substrate from undergoing plastic deformation.
In the present embodiment, the composition ratio of each gas in the carrier gas may be adjusted based on a predetermined composition ratio of each gas with respect to time in the step of growing the nitride nucleation layer and/or in the step of growing each nitride insertion layer. For example, (a), (B), (C), (D) of fig. 2 show the component ratio of each gas in the carrier gas as a function of time. As shown in FIG. 2, the carrier gas contains, for example, hydrogen (H)2) And nitrogen (N)2) In (a), (B), (C), and (D), the solid line represents the change with time of the proportion of hydrogen in the carrier gas, and the broken line represents the change with time of the proportion of nitrogen in the carrier gas. In (a), the ratio of hydrogen and the ratio of nitrogen are kept constant. In other embodiments, such as in fig. 2(B) - (D), the ratio of hydrogen and nitrogen varies periodically with time, and the stages at which the ratio of hydrogen and nitrogen varies with time are inversely related, i.e., the ratio of hydrogen increases while the ratio of nitrogen decreases, or the ratio of hydrogen decreases while the ratio of nitrogen increases, wherein: in (B), the change of the ratio of nitrogen to hydrogen is triangular, and the change of the ratio of hydrogen to nitrogen with time is inversely related; in the step (C), the change of the proportion of the nitrogen and the hydrogen is in a step shape, the adjacent steps are gradually changed, and the gradual change stages of the proportion of the nitrogen and the hydrogen are in inverse correlation; in (D), the ratio change of the nitrogen and the hydrogen is in a step shape, the adjacent steps are in jumping, and the jumping stage of the ratio of the nitrogen and the hydrogen is in inverse correlation. In addition, in the present application, by periodically changing the ratio of hydrogen to nitrogen with time, the surface of the epitaxial material can be made smooth by the etching action of hydrogen on the epitaxial material, thereby improving the crystal quality.
It should be noted that (a), (B), (C), and (D) in fig. 2 are merely examples, and the relationship between the component ratio of each gas in the carrier gas and time is not limited to this, and other relationships may be used. As shown in fig. 2(B) - (D), the ratio of hydrogen to nitrogen at the end of half cycle is the ratio of nitrogen to hydrogen at the beginning of the cycle, and in real production, the ratio of hydrogen at the end of half cycle may be higher or lower than the ratio of nitrogen at the beginning of the cycle, and the present invention is not limited thereto. In any of (a), (B), (C), and (D) of fig. 2, the sum of the flow rates of hydrogen and nitrogen may be constant or may be changed at different times, and the present invention is not limited thereto.
In addition, in the present application, in the case of periodically changing the ratio of hydrogen to nitrogen with time, the above-mentioned change period of the ratio of hydrogen to nitrogen may be adjusted according to the requirements of the epitaxial material for different thicknesses, so that the warpage of the material may be more flexibly controlled.
In the present embodiment, the composition ratio of each gas in the carrier gas may be adjusted in accordance with any of the above relationships for each of the steps of growing the nitride insertion layer, and the relationship used for each step may be the same or different.
In this embodiment, the composition ratio of each gas in the carrier gas may be adjusted in the step of growing the nitride nucleation layer according to any one of the above relationships, and the relationship used in the step of growing the nitride nucleation layer may be the same as or different from the relationship corresponding to each step of growing the nitride insertion layer.
In the present embodiment, the crystal plane of the surface of the silicon base substrate may be a Si (111) plane, and the present embodiment is not limited thereto, and the crystal plane may be another plane. In this embodiment, the silicon-based substrate may be a silicon wafer, a silicon-on-insulator (SOI) wafer, a strained silicon wafer, a silicon germanium wafer, or the like.
In this embodiment, the carrier gas may be nitrogen (N)2) And hydrogen (H)2) The present embodiment is not limited to this, and the carrier gas may be another gas.
According to the present embodiment, based on the above-described method, it is possible to provide a nitride epitaxial structure grown on a silicon-based substrate, the nitride epitaxial structure including:
a nitride nucleating layer growing on the surface of the silicon substrate; a nitride buffer layer grown on the surface of the nitride nucleation layer; and a predetermined number of stacked layers of a nitride insertion layer and a nitride buffer layer sequentially grown on the surface of the nitride buffer layer, wherein in each of the stacked layers, the nitride buffer layer is grown on the surface of the nitride insertion layer, and the nitride insertion layer of the previous stacked layer is grown on the surface of the nitride buffer layer of the next stacked layer.
The nitride epitaxial layer structure of the present embodiment has good crystal quality.
The nitride epitaxial structure grown on a silicon-based substrate and the growth method thereof according to the present embodiment will be described below with reference to a specific example.
In this example, the substrate is a Si (111) substrate, the nitride nucleation layer is AlN, the nitride buffer layer is (Al) GaN, the nitride insertion layer is Al (Ga) N, and the carrier gas is nitrogen N2And hydrogen H2A mixed gas of (a).
In this example, the step of growing the nitride epitaxial layer structure includes:
And 3, growing a first (Al) GaN buffer layer on the AlN nucleating layer.
Step 4, growing a first Al (Ga) N insertion layer on the first buffer layer, and controlling N in the growth process of the Al (Ga) N insertion layer2/H2The mixed carrier gas component ratio is controlled by using any one of (A), (B), (C) and (D) of FIG. 2, for example, so that the following (Al) GaN buffer layer has corresponding compressive stress to meet the requirements of different buffer layer thicknesses.
And 5, repeating thestep 3 and the step 4 to achieve the required thickness of the epitaxial buffer layer.
And 6, growing a final (Al) GaN buffer layer on the basis of thestep 5.
The epitaxial structure formed afterstep 6 is completed is shown in fig. 3.
In fig. 3, anAlN nucleation layer 2 is formed on the surface of asubstrate 1, a first (Al)GaN buffer layer 3 is formed on the surface of theAlN nucleation layer 2, a first Al (ga) N insertion layer 4 is formed on the surface of the first (Al)GaN buffer layer 3, a second Al (ga)GaN buffer layer 5 is formed on the surface of the first Al (ga) N insertion layer 4, a second Al (ga)N insertion layer 6 is formed on the surface of the second (Al)GaN buffer layer 5, a predetermined number of buffer layer/insertion layer stacks 7 are formed on the surface of the second Al (ga)N insertion layer 6, and an uppermost (Al)GaN buffer layer 8 is formed on the surface of the stack 7.
In this example, fig. 4 is a schematic diagram of the curvature of the in-situ test of 3 samples as a function of growth time, wherein the carrier gases ofsamples sample 2 is a mixed carrier gas of hydrogen and nitrogen. In the growth process of thesample 2, the component proportion of hydrogen and nitrogen in the carrier gas is adjusted, the growth thickness of thesample 2 can reach 5.5um, the stress of thesample 2 in the growth process does not reach the degree of generating plastic deformation, and cracks are not generated in thesample 2 after the temperature is reduced. Therefore, in the application, the tensile stress in the cooling process is completely or partially counteracted by adjusting the component proportion of each gas in the carrier gas, so that the silicon-based substrate is prevented from generating plastic deformation.
The present application has been described in conjunction with specific embodiments, but it should be understood by those skilled in the art that these descriptions are intended to be illustrative, and not limiting. Various modifications and adaptations of the present application may occur to those skilled in the art based on the spirit and principles of the application and are within the scope of the application.
Claims (8)
1. A method for growing a nitride epitaxial structure on a silicon-based substrate by introducing a reactant gas and a carrier gas for carrying the reactant gas into a reaction chamber, the method comprising:
growing a nitride nucleating layer on the surface of the silicon-based substrate;
growing a nitride buffer layer on the surface of the nitride nucleation layer; and
sequentially growing a predetermined number of stacked layers of a nitride insertion layer and a nitride buffer layer on the surface of the nitride buffer layer, wherein in each of the stacked layers, the nitride buffer layer is grown on the surface of the nitride insertion layer, and the nitride insertion layer of the previous stacked layer is grown on the surface of the nitride buffer layer of the next stacked layer,
the carrier gas is a mixed gas containing at least two gases,
adjusting a composition ratio of each gas for composing the carrier gas in the step of growing the nitride nucleation layer and/or the nitride insertion layer to control a compressive stress generated in the nitride buffer layer in the step of growing the nitride buffer layer on the surface of the nitride nucleation layer and/or the nitride insertion layer,
wherein the carrier gas is a mixed gas of nitrogen and hydrogen, the proportion of nitrogen and hydrogen in the carrier gas is inversely related, and the proportion of hydrogen and nitrogen in the carrier gas is periodically changed.
2. The method of claim 1, wherein,
the compressive stress is less than a stress that plastically deforms the silicon-based substrate.
3. The method of claim 1, wherein,
in the step of growing the nitride nucleation layer or in the step of growing each nitride insertion layer, the composition ratio of each gas in the carrier gas is adjusted based on a predetermined composition ratio of each gas with respect to time.
4. The method of claim 3, wherein,
the relationship corresponding to each step of growing the nitride insertion layer is the same or different.
5. The method of claim 4, wherein,
the relationship corresponding to the step of growing the nitride nucleation layer may be the same or different than the relationship corresponding to each step of growing the nitride insertion layer.
6. The method of claim 1, wherein,
and the crystal plane of the surface of the silicon-based substrate is a Si (111) plane.
7. The method as recited in claim 1,
hydrogen (H) in the carrier gas in the step of growing the nitride nucleation layer and/or the nitride insertion layer2) And nitrogen (N)2) The periodic variation of the ratio of (a) is characterized by one of the following;
the change of the proportion of the nitrogen and the hydrogen is in a step shape, the adjacent steps are gradually changed, and the gradual change stages of the proportion of the nitrogen and the hydrogen are in inverse correlation;
the change of the proportion of the nitrogen and the hydrogen is in a step shape, the adjacent steps are in jumping, and the jumping stages of the proportion of the nitrogen and the hydrogen are in inverse correlation.
8. A nitride epitaxial structure grown on a silicon-based substrate by introducing a reactant gas and a carrier gas for carrying the reactant gas into a reaction chamber, the nitride epitaxial structure comprising:
a nitride nucleating layer growing on the surface of the silicon substrate;
a nitride buffer layer grown on the surface of the nitride nucleation layer; and
a predetermined number of stacked layers of a nitride insertion layer and a nitride buffer layer are sequentially grown on the surface of the nitride buffer layer, wherein in each of the stacked layers, the nitride buffer layer is grown on the surface of the nitride insertion layer, and the nitride insertion layer of the previous stacked layer is grown on the surface of the nitride buffer layer of the next stacked layer,
the carrier gas is a mixed gas containing at least two gases,
in the step of growing the nitride nucleation layer and/or the nitride insertion layer, the composition ratio of each gas for constituting the carrier gas is adjusted so that a compressive stress is introduced in the nitride buffer layer in the step of growing the nitride buffer layer on the surface of the nitride nucleation layer and/or the nitride insertion layer,
wherein the carrier gas is a mixed gas of nitrogen and hydrogen, the proportion of nitrogen and hydrogen in the carrier gas is inversely related, and the proportion of hydrogen and nitrogen in the carrier gas is periodically changed.
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Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101702422A (en)* | 2009-10-29 | 2010-05-05 | 上海蓝光科技有限公司 | A method for growing nitride thin film epitaxial layer on graphic substrate |
| CN103236477A (en)* | 2013-04-19 | 2013-08-07 | 安徽三安光电有限公司 | LED (light emitting diode) epitaxy structure and preparation method thereof |
| CN104037284A (en)* | 2014-06-10 | 2014-09-10 | 广州市众拓光电科技有限公司 | GaN thin film growing on Si substrate and preparation method and applications thereof |
| CN104465918A (en)* | 2014-10-31 | 2015-03-25 | 华灿光电(苏州）有限公司 | Light emitting diode epitaxial wafer and preparation method thereof |
| CN104810451A (en)* | 2015-04-29 | 2015-07-29 | 华灿光电(苏州）有限公司 | GaN-based light-emitting diode epitaxial wafer production method and produced epitaxial wafer |
| CN105591004A (en)* | 2016-03-29 | 2016-05-18 | 苏州晶湛半导体有限公司 | LED epitaxial wafer based on graphical Si substrate and making method of LED epitaxial wafer |
| CN106544643A (en)* | 2016-12-07 | 2017-03-29 | 中国电子科技集团公司第五十五研究所 | A kind of preparation method of nitride film |
| CN106601883A (en)* | 2016-11-26 | 2017-04-26 | 华灿光电（浙江）有限公司 | Epitaxial wafer of light emitting diode and preparation method |
| CN107170860A (en)* | 2017-05-27 | 2017-09-15 | 华灿光电（浙江）有限公司 | Epitaxial wafer of light emitting diode and preparation method thereof |
- 2018
- 2018-06-01CNCN201810554882.4Apatent/CN110556454B/enactiveActive
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101702422A (en)* | 2009-10-29 | 2010-05-05 | 上海蓝光科技有限公司 | A method for growing nitride thin film epitaxial layer on graphic substrate |
| CN103236477A (en)* | 2013-04-19 | 2013-08-07 | 安徽三安光电有限公司 | LED (light emitting diode) epitaxy structure and preparation method thereof |
| CN104037284A (en)* | 2014-06-10 | 2014-09-10 | 广州市众拓光电科技有限公司 | GaN thin film growing on Si substrate and preparation method and applications thereof |
| CN104465918A (en)* | 2014-10-31 | 2015-03-25 | 华灿光电(苏州）有限公司 | Light emitting diode epitaxial wafer and preparation method thereof |
| CN104810451A (en)* | 2015-04-29 | 2015-07-29 | 华灿光电(苏州）有限公司 | GaN-based light-emitting diode epitaxial wafer production method and produced epitaxial wafer |
| CN105591004A (en)* | 2016-03-29 | 2016-05-18 | 苏州晶湛半导体有限公司 | LED epitaxial wafer based on graphical Si substrate and making method of LED epitaxial wafer |
| CN106601883A (en)* | 2016-11-26 | 2017-04-26 | 华灿光电（浙江）有限公司 | Epitaxial wafer of light emitting diode and preparation method |
| CN106544643A (en)* | 2016-12-07 | 2017-03-29 | 中国电子科技集团公司第五十五研究所 | A kind of preparation method of nitride film |
| CN107170860A (en)* | 2017-05-27 | 2017-09-15 | 华灿光电（浙江）有限公司 | Epitaxial wafer of light emitting diode and preparation method thereof |
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