技术领域technical field
本发明涉及微电子技术领域,尤其涉及一种表面波等离子体发生装置和方法。The invention relates to the technical field of microelectronics, in particular to a surface wave plasma generating device and method.
背景技术Background technique
等离子体作为“物质的第四态”在现代产业中广泛使用,比如碳纳米管的制备、半导体的加工、材料的表面改性等,在等离子体的应用中,除了保证等离子体放电的安定性及再现性以外,还要求低压等离子体高密度化,大面积化和均匀化。As the "fourth state of matter", plasma is widely used in modern industries, such as the preparation of carbon nanotubes, the processing of semiconductors, the surface modification of materials, etc. In the application of plasma, in addition to ensuring the stability of plasma discharge In addition to reproducibility, high-density, large-area and uniform low-pressure plasma are also required.
现有的微波表面波等离子体发生装置在微波耦合入反应器之前,需通过缝隙板,在缝隙板上产生偏振,但通过缝隙板时,不仅微波能量会大量损失,而且透过的微波也会出现不均匀的现象,不利于生成高密度、大面积的均匀等离子体。The existing microwave surface wave plasma generation device needs to pass through the slit plate to generate polarization on the slit plate before the microwave is coupled into the reactor. The phenomenon of inhomogeneity is not conducive to the generation of uniform plasma with high density and large area.
发明内容Contents of the invention
本发明提供一种表面波等离子体发生装置和方法,去掉了缝隙板,改变耦合变换器的结构,提供高密度、大面积的均匀等离子体。The invention provides a surface wave plasma generating device and method, which removes the slot plate, changes the structure of the coupling converter, and provides high-density, large-area uniform plasma.
一种表面波等离子体发生装置,包括依次连接的微波源、环形隔离器、匹配调节器、波导管、耦合变换器、耦合隔离器和反应器,所述反应器为上底敞开、下底密封的圆柱形筒体,所述反应器的上底与所述耦合隔离器的一面固定连接,所述耦合隔离器的另一面与所述耦合变换器固定连接,所述反应器的侧面设有进气管和气压调节装置,所述气压调节装置用于维持所述反应器中的低气压环境。A surface wave plasma generating device, comprising sequentially connected microwave sources, annular isolators, matching regulators, waveguides, coupling transformers, coupling isolators and reactors, the reactor is open at the bottom and sealed at the bottom The upper bottom of the reactor is fixedly connected to one side of the coupling isolator, the other side of the coupling isolator is fixedly connected to the coupling converter, and the side of the reactor is provided with a A gas line and an air pressure regulator for maintaining a low pressure environment in the reactor.
进一步地,所述反应器上设有通气管,所述通气管上设置控制阀和压力检测器,所述压力检测器比所述控制阀靠近所述反应器。Further, the reactor is provided with a vent pipe, and the vent pipe is provided with a control valve and a pressure detector, and the pressure detector is closer to the reactor than the control valve.
进一步地,所述进气管上设有气体流量控制器。Further, a gas flow controller is provided on the air intake pipe.
进一步地,所述波导管选用方形波导管。Further, the waveguide is a square waveguide.
进一步地,所述耦合变换器依次包括传输段、过渡段和实现段,所述传输段与所述波导管连接并且两者的截面相同,所述实现段与所述耦合隔离器连接,并且所述实现段的截面与所述反应器的截面相同,所述过渡段为截面渐变的波导,所述过渡段的截面由与所述传输段相同的截面渐变为与所述实现段相同的截面。Further, the coupling converter includes a transmission section, a transition section and a realization section in sequence, the transmission section is connected to the waveguide and both have the same cross-section, the realization section is connected to the coupling isolator, and the The cross section of the realization section is the same as that of the reactor, the transition section is a waveguide with a gradually changing section, and the cross section of the transition section gradually changes from the same cross section as the transmission section to the same cross section as the realization section.
进一步地,所述过渡段长度L1=5cm~65cm,所述实现段长度L2=2cm~5cm,所述反应器的高度为6cm~40cm,所述实现段截面直径与所述反应器底面直径相等,直径D=10cm~30cm。Further, the length of the transition section L1 =5cm-65cm, the length of the realization section L2 =2cm-5cm, the height of the reactor is 6cm-40cm, the cross-sectional diameter of the realization section is the same as the bottom surface of the reactor The diameters are equal, diameter D=10cm~30cm.
进一步地,所述耦合隔离器为石英或无极性陶瓷中的一种。Further, the coupling isolator is one of quartz or non-polar ceramics.
进一步地,所述反应器上设有等离子体检测端口和观察窗,所述观察窗采用玻璃或石英。Further, the reactor is provided with a plasma detection port and an observation window, and the observation window is made of glass or quartz.
一种表面波等离子体发生方法,利用权利要求所述的表面波等离子体发生装置,具体方法如下:A surface wave plasma generation method, using the surface wave plasma generation device described in the claims, the specific method is as follows:
启动所述气压调节装置,将所述反应器抽真空,然后从所述进气管通入气体,并利用所述气压调节装置维持所述反应器中的气压范围为0.1~2000Pa,利用所述气体流量控制器控制通入气体的流量为0-10L/min;Start the air pressure regulating device, evacuate the reactor, then feed gas from the inlet pipe, and use the air pressure regulating device to maintain the pressure range of 0.1-2000Pa in the reactor, and use the gas The flow controller controls the flow rate of the incoming gas to 0-10L/min;
启动所述微波源,利用所述微波源输出微波,微波的功率为200W-5000W,微波的频率为2450MHz±20MHz,微波经过所述环形隔离器传输至所述匹配调节器,经所述匹配调节器调节后,通过所述波导管传输到所述耦合变换器并进一步传输到所述耦合隔离器,微波通过所述耦合隔离器注入到所述反应器中,所述耦合隔离器处于所述反应器内的一侧电离气体形成表面波等离子体。Start the microwave source, use the microwave source to output microwave, the power of the microwave is 200W-5000W, the frequency of the microwave is 2450MHz±20MHz, the microwave is transmitted to the matching regulator through the ring isolator, and the matching regulator After being adjusted by the waveguide, it is transmitted to the coupling transformer and further transmitted to the coupling isolator, and the microwave is injected into the reactor through the coupling isolator, and the coupling isolator is in the reaction One side of the vessel ionizes the gas to form a surface wave plasma.
本发明提供一种表面波等离子体发生装置和方法,去掉了缝隙板,通过改变耦合变换器的结构,使微波在反应器内激发,形成高密度、大面积的均匀等离子体。The invention provides a surface wave plasma generating device and method, which removes the slit plate and changes the structure of the coupling converter to excite microwaves in the reactor to form uniform plasma with high density and large area.
附图说明Description of drawings
为了更清楚地说明本发明实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作一简单地介绍,显而易见地,下面描述中的附图是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings that need to be used in the description of the embodiments or the prior art. Obviously, the accompanying drawings in the following description These are some embodiments of the present invention. Those skilled in the art can also obtain other drawings based on these drawings without creative work.
图1为本发明公开的表面波等离子体发生装置结构示意图;Fig. 1 is a schematic structural diagram of a surface wave plasma generating device disclosed in the present invention;
图2为本发明中耦合变换器的结构示意图;Fig. 2 is the structural representation of coupling converter among the present invention;
图3为本发明中耦合变换器和反应器的剖视结构示意图。Fig. 3 is a schematic cross-sectional structure diagram of a coupling converter and a reactor in the present invention.
图中:1、微波源;2、环形隔离器;3、匹配调节器;4、波导管;5、耦合变换器;6、耦合隔离器;7、气体流量控制器;8、等离子体检测端口;9、观察窗;10、气压调节装置;11、压力传感器;12、压力检测器;13、反应器;14、进气管;15、通气管。In the figure: 1. Microwave source; 2. Ring isolator; 3. Matching regulator; 4. Waveguide; 5. Coupling converter; 6. Coupling isolator; 7. Gas flow controller; 8. Plasma detection port 9. Observation window; 10. Air pressure regulating device; 11. Pressure sensor; 12. Pressure detector; 13. Reactor; 14. Air intake pipe; 15. Ventilation pipe.
具体实施方式Detailed ways
为使本发明实施例的目的、技术方案和优点更加清楚,下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.
如图1所示,一种表面波等离子体发生装置,包括依次连接的微波源1、环形隔离器2、匹配调节器3、波导管4、耦合变换器5、耦合隔离器6和反应器13,反应器13为上底敞开、下底密封的圆柱形筒体,反应器13的上底与耦合隔离器6的一面固定连接,耦合隔离器6的另一面与耦合变换器5固定连接,反应器上设有进气管14和气压调节装置10,气压调节装置10用于维持反应器13中的低气压环境。As shown in Figure 1, a surface wave plasma generating device includes a microwave source 1, an annular isolator 2, a matching regulator 3, a waveguide 4, a coupling transformer 5, a coupling isolator 6 and a reactor 13 connected in sequence , the reactor 13 is a cylindrical barrel with an open upper bottom and a sealed lower bottom, the upper bottom of the reactor 13 is fixedly connected to one side of the coupling isolator 6, and the other side of the coupling isolator 6 is fixedly connected to the coupling converter 5, and the reaction An air inlet pipe 14 and an air pressure regulating device 10 are provided on the reactor, and the air pressure regulating device 10 is used to maintain a low pressure environment in the reactor 13 .
由微波源1发出的微波,经过环形隔离器2、匹配调节器3,然后由波导管4传输到耦合变换器5,耦合变换器5直接通过耦合隔离器将微波注入反应器中,起到耦合作用,本实施例中,反应器采用不锈钢、铝或镍铜合金中的一种,微波从耦合变换器5的下开口注入反应器13,比现有技术中,通过缝隙渗透微波,效率要高,微波的通过量增大,激发的等离子体的密度也会提高。The microwave emitted by the microwave source 1 passes through the ring isolator 2 and the matching regulator 3, and then is transmitted by the waveguide 4 to the coupling converter 5, and the coupling converter 5 directly injects the microwave into the reactor through the coupling isolator to play a coupling role. Effect, in this embodiment, the reactor adopts one of stainless steel, aluminum or nickel-copper alloy, and the microwave is injected into the reactor 13 from the lower opening of the coupling converter 5, which is more efficient than that in the prior art, where the microwave penetrates through the gap , the microwave throughput increases, and the density of the excited plasma increases.
气压调节装置采用真空泵,在启动微波源之前,利用气压调节装置将反应器中气体抽出,然后通入需要的气体,如氦气、氮气等,至需要的压力,并由气压调节装置维持压力。The air pressure adjustment device adopts a vacuum pump. Before starting the microwave source, use the air pressure adjustment device to pump out the gas in the reactor, and then pass in the required gas, such as helium, nitrogen, etc., to the required pressure, and the pressure is maintained by the air pressure adjustment device.
进一步地,反应器13上设有通气管15,通气管15上设置控制阀11和压力检测器12,压力检测器12比控制阀11靠近反应器。控制阀11在装置工作结束前处于关闭状态,由压力检测器12对反应器13内的压力实时监测。装置工作结束后,打开控制阀11,平衡反应器13内外气压。Further, the reactor 13 is provided with a vent pipe 15, and the vent pipe 15 is provided with a control valve 11 and a pressure detector 12, and the pressure detector 12 is closer to the reactor than the control valve 11. The control valve 11 is in a closed state before the device is finished working, and the pressure in the reactor 13 is monitored in real time by the pressure detector 12 . After the device works, open the control valve 11 to balance the internal and external air pressure of the reactor 13.
进一步地,进气管14上设有气体流量控制器7,可以精确控制通入反应器13内气体的流量。Further, a gas flow controller 7 is provided on the inlet pipe 14 to accurately control the flow of gas entering the reactor 13 .
进一步地,波导管4选用方形波导管。微波源发出的微波功率较大,采用方形波导管,有利于大功率微波的传输。Further, the waveguide 4 is a square waveguide. The microwave power emitted by the microwave source is relatively large, and the square waveguide is used, which is conducive to the transmission of high-power microwave.
进一步地,如图2、图3所示,耦合变换器5依次包括传输段51、过渡段52和实现段53,传输段51与波导管4连接并且两者的截面相同,实现段53与耦合隔离器6连接,并且实现段53的截面与反应器13的截面相同,过渡段52为截面渐变的波导,过渡段52的截面由与传输段51相同的截面渐变为与实现段53相同的截面。除了从方形到圆形的形状变换外,耦合变换器5直接通过耦合隔离器将微波注入进反应器,起到耦合作用,耦合变换器5下开口可以通过更大量的微波,使生成的等离子体密度更大。Further, as shown in Fig. 2 and Fig. 3, the coupling transformer 5 includes a transmission section 51, a transition section 52 and a realization section 53 in sequence, the transmission section 51 is connected to the waveguide 4 and both have the same cross-section, and the realization section 53 is connected to the coupling The isolator 6 is connected, and the cross-section of the realization section 53 is the same as that of the reactor 13, the transition section 52 is a waveguide with a gradual change in cross-section, and the cross-section of the transition section 52 is gradually changed from the same cross-section as the transmission section 51 to the same cross-section as the realization section 53 . In addition to the shape transformation from square to circular, the coupling converter 5 directly injects microwaves into the reactor through the coupling isolator to play a coupling role. The lower opening of the coupling converter 5 can pass through a larger amount of microwaves to make the generated plasma Denser.
进一步地,过渡段长度L1=5cm~65cm,实现段(53)长度L2=2cm~5cm,反应器(13)的高度为6cm~40cm,实现段53截面直径与反应器13底面直径相等,直径D=10cm~30cm。微波在传输过程中,振幅和位相时刻都在发生变化,将耦合变换器和反应器按所述尺寸设计制作,使微波在耦合点处达到较强电场(耦合点,即耦合隔离器处),利用微波产生的较强电场,实现去掉滤波板后的多模耦合。由于去掉了滤波板,使微波以多模耦合入反应器,在同等功率下产生较强电场,使生成等离子体密度更大。Further, the length L1 of the transition section is 5 cm to 65 cm, the length L2 of the section (53) is 2 cm to 5 cm, the height of the reactor (13) is 6 cm to 40 cm, and the section diameter of the section 53 is equal to the diameter of the bottom surface of the reactor 13 , diameter D = 10cm ~ 30cm. During the microwave transmission process, the amplitude and phase are changing all the time. The coupling converter and reactor are designed and manufactured according to the above-mentioned size, so that the microwave reaches a strong electric field at the coupling point (the coupling point, that is, the coupling isolator), The strong electric field generated by the microwave is used to realize the multi-mode coupling after removing the filter plate. Because the filter plate is removed, the microwave is coupled into the reactor in multi-mode, and a stronger electric field is generated under the same power, so that the density of the generated plasma is higher.
进一步地,耦合隔离器6为石英或无极性陶瓷中的一种。Further, the coupling isolator 6 is one of quartz or non-polar ceramics.
进一步地,反应器10上设有等离子体检测端口8和观察窗9,观察窗9采用玻璃或石英。等离子体检测端口8可以连接检测仪器,用于检测等离子体密度、反应器内温度等。通过观察窗9可观察到反应器内部等离子体的状况。Further, the reactor 10 is provided with a plasma detection port 8 and an observation window 9, and the observation window 9 is made of glass or quartz. The plasma detection port 8 can be connected with a detection instrument for detecting the plasma density, the temperature in the reactor, and the like. The status of the plasma inside the reactor can be observed through the observation window 9 .
一种表面波等离子体发生方法如下:A surface wave plasma generation method is as follows:
启动气压调节装置10,将反应器13抽真空,然后从进气管14通入气体,并利用气压调节装置10维持反应器13中的气压范围为0.1~2000Pa,利用气体流量控制器7控制通入气体的流量为0-10L/min;Start the air pressure regulating device 10, vacuumize the reactor 13, then feed gas from the inlet pipe 14, and use the air pressure regulating device 10 to maintain the pressure range of 0.1 to 2000Pa in the reactor 13, and use the gas flow controller 7 to control the gas flow into the reactor. The gas flow rate is 0-10L/min;
启动微波源1,利用微波源1输出微波,微波的功率为200W-5000W,微波的频率为2450MHz±20MHz,微波经过环形隔离器2传输至匹配调节器3,经匹配调节器3调节后,通过波导管4传输到耦合变换器5并进一步传输到耦合隔离器6,微波穿过耦合隔离器6注入到反应器13中,耦合隔离器6处于反应器13内的一侧电离气体形成表面波等离子体。Start the microwave source 1, use the microwave source 1 to output microwaves, the power of the microwave is 200W-5000W, the frequency of the microwave is 2450MHz±20MHz, the microwave is transmitted to the matching regulator 3 through the ring isolator 2, after being adjusted by the matching regulator 3, it passes The waveguide 4 is transmitted to the coupling transformer 5 and further transmitted to the coupling isolator 6. The microwave passes through the coupling isolator 6 and is injected into the reactor 13. The ionized gas on one side of the coupling isolator 6 in the reactor 13 forms surface wave plasma body.
本发明中公开的表面波等离子体发生装置和方法,使用两种气体进行考察,过程如下:The surface wave plasma generation device and method disclosed in the present invention are investigated using two kinds of gases, and the process is as follows:
1、打开气压调节装置10,去除反应器13内杂质气体,压力达到1×10-3Pa,然后将纯氩气气体经过气体流量控制器7进入反应器13中,通气流量为500ml/min,启动微波源1,功率设置为755W,经环形隔离器2、匹配调节器3、波导管4、耦合变换器5和耦合隔离器6,将产生的微波输入反应器13中并形成表面波;利用气压调节装置10使反应器13内的气压维持在100Pa,反应器13中的微波表面波激发并维持等离子,对氩气气体放电产生的等离子体密度达到8.1×1011/cm3,平均电子温度2.05eV。1. Open the air pressure regulating device 10 to remove the impurity gas in the reactor 13, and the pressure reaches 1×10-3 Pa, then enter the pure argon gas into the reactor 13 through the gas flow controller 7, and the ventilation flow rate is 500ml/min, Start the microwave source 1, the power is set to 755W, through the ring isolator 2, the matching regulator 3, the waveguide 4, the coupling transformer 5 and the coupling isolator 6, the generated microwave is input into the reactor 13 and forms a surface wave; The air pressure regulating device 10 maintains the air pressure in the reactor 13 at 100 Pa, the microwave surface wave in the reactor 13 excites and maintains the plasma, and the plasma density generated by the argon gas discharge reaches 8.1×1011 /cm3 , and the average electron temperature 2.05eV.
2、打开气压调节装置10,去除反应器13内杂质气体,压力达到1×10-3Pa,然后将纯氦气气体经过气体流量控制器7进入反应器13中,通气流量为500ml/min,启动微波源1,功率设置为860W,经环形隔离器2、匹配调节器3、波导管4、耦合变换器5和耦合隔离器6,将产生的微波输入反应器13中并形成表面波;利用气压调节装置10使反应器13内的气压维持在500Pa,反应器13中的微波表面波激发并维持等离子,对氩气气体放电产生的等离子体密度达到2.9×1012/cm3,平均电子温度3.78eV。2. Open the air pressure regulating device 10 to remove the impurity gas in the reactor 13 until the pressure reaches 1×10-3 Pa, and then enter the pure helium gas into the reactor 13 through the gas flow controller 7 with a flow rate of 500ml/min. Start the microwave source 1, set the power to 860W, pass through the ring isolator 2, the matching regulator 3, the waveguide 4, the coupling transformer 5 and the coupling isolator 6, and input the generated microwave into the reactor 13 to form a surface wave; The air pressure regulating device 10 maintains the air pressure in the reactor 13 at 500 Pa, the microwave surface wave in the reactor 13 excites and maintains the plasma, and the plasma density generated by the argon gas discharge reaches 2.9×1012 /cm3 , and the average electron temperature 3.78eV.
最后应说明的是:以上各实施例仅用以说明本发明的技术方案,而非对其限制;尽管参照前述各实施例对本发明进行了详细的说明,本领域的普通技术人员应当理解:其依然可以对前述各实施例所记载的技术方案进行修改,或者对其中部分或者全部技术特征进行等同替换;而这些修改或者替换,并不使相应技术方案的本质脱离本发明各实施例技术方案的范围。Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present invention, rather than limiting them; although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that: It is still possible to modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements for some or all of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the technical solutions of the various embodiments of the present invention. scope.
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| CN201910900645.3ACN110505746A (en) | 2019-09-23 | 2019-09-23 | Apparatus and method for generating surface wave plasma |
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910900645.3ACN110505746A (en) | 2019-09-23 | 2019-09-23 | Apparatus and method for generating surface wave plasma |
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| CN110505746Atrue CN110505746A (en) | 2019-11-26 |
| Application Number | Title | Priority Date | Filing Date |
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| CN201910900645.3APendingCN110505746A (en) | 2019-09-23 | 2019-09-23 | Apparatus and method for generating surface wave plasma |
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| CN (1) | CN110505746A (en) |
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| US5008593A (en)* | 1990-07-13 | 1991-04-16 | The United States Of America As Represented By The Secretary Of The Air Force | Coaxial liquid cooling of high power microwave excited plasma UV lamps |
| US20040069232A1 (en)* | 2002-10-09 | 2004-04-15 | Chih-Yung Huang | Microwave plasma processing apparatus |
| CN201114975Y (en)* | 2007-08-21 | 2008-09-10 | 西安电子科技大学 | Resonant cavity device for electron cyclotron resonance plasma source |
| CN104726850A (en)* | 2013-12-23 | 2015-06-24 | 朱雨 | Microwave-plasma chemical vapor deposition equipment |
| CN109195299A (en)* | 2018-10-31 | 2019-01-11 | 上海工程技术大学 | A kind of periphery wave plasma generating device |
| CN210537010U (en)* | 2019-09-23 | 2020-05-15 | 大连海事大学 | A surface wave plasma generator |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5008593A (en)* | 1990-07-13 | 1991-04-16 | The United States Of America As Represented By The Secretary Of The Air Force | Coaxial liquid cooling of high power microwave excited plasma UV lamps |
| US20040069232A1 (en)* | 2002-10-09 | 2004-04-15 | Chih-Yung Huang | Microwave plasma processing apparatus |
| CN201114975Y (en)* | 2007-08-21 | 2008-09-10 | 西安电子科技大学 | Resonant cavity device for electron cyclotron resonance plasma source |
| CN104726850A (en)* | 2013-12-23 | 2015-06-24 | 朱雨 | Microwave-plasma chemical vapor deposition equipment |
| CN109195299A (en)* | 2018-10-31 | 2019-01-11 | 上海工程技术大学 | A kind of periphery wave plasma generating device |
| CN210537010U (en)* | 2019-09-23 | 2020-05-15 | 大连海事大学 | A surface wave plasma generator |
| Title |
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| RJ01 | Rejection of invention patent application after publication | Application publication date:20191126 |