技术领域technical field
本发明涉及LED(Light Emitting Diode，发光二极管)领域，尤其涉及一种LED及发光装置。The present invention relates to the field of LED (Light Emitting Diode, light emitting diode), in particular to an LED and a light emitting device.
背景技术Background technique
随着LED技术的发展和在各个领域各种场景的应用，产生了满足各种需求的LED结构。在各种LED结构中，基本都会使用到LED支架，而为了满足各种需求，也衍生了各种尺寸、结构和材质的LED支架。但是，目前的LED支架结构的设置都仅仅是承载LED芯片，对LED芯片起到保护，以及将LED芯片的正、负极引出的作用。目前的各种LED支架都不承担电路布线，当在一些应用场景中，需要将LED与其他LED电连接或与其他器件电连接时，只能通过额外的PCB板电路实现该电连接。With the development of LED technology and the application of various scenarios in various fields, LED structures that meet various needs have been produced. In various LED structures, LED brackets are basically used, and in order to meet various needs, LED brackets of various sizes, structures and materials have also been derived. However, the setting of the current LED support structure is only to carry the LED chip, protect the LED chip, and lead out the positive and negative poles of the LED chip. Various current LED brackets do not undertake circuit wiring. When in some application scenarios, it is necessary to electrically connect LEDs to other LEDs or to other devices, the electrical connection can only be realized through additional PCB board circuits.
另外，当需要在一个LED支架中设置多颗串联或并联或串并联混合连接的LED芯片时，目前的做法也只能是将多个LED芯片设置在支架的基板上，然后再额外通过金线实现各LED芯片之间的连接，例如，参见图1-图2所示的一种现有典型的LED结构，其中图1为LED忽略除荧光胶之后的俯视图，图2为图1的LED的剖视图，在图1-图2中，假设需要在LED支架1内设置多颗依次串联连接的LED芯片11时，目前的做法则只能通过金线依次实现串联线路上相邻LED芯片11正负极之间的电连接。从图1所示可知，通过在LED支架底部额外采用金线实现各LED芯片11之间的连接，需要连接的线路多且杂，实现连接的焊接过程效率低下，且受限于LED支架尺寸限制容易出现脱焊、虚焊甚至焊接错误的情况，导致产品成本高，产品质量良品率和可靠性差，且图1-图2所示的仅仅是要求LED芯片11之间实现最简单的串联连接，如果需要在一个LED支架内实现LED芯片之间串并联混合连接或其他的复杂连接方式时，在目前的LED支架结构基本不能实现。In addition, when it is necessary to arrange multiple LED chips connected in series or in parallel or in a combination of series and parallel in an LED bracket, the current method can only be to arrange multiple LED chips on the substrate of the bracket, and then additionally pass through the gold wire To realize the connection between LED chips, for example, see a typical existing LED structure shown in Fig. 1-Fig. In the cross-sectional view, in Fig. 1-Fig. 2, assuming that multiple LED chips 11 sequentially connected in series need to be arranged in the LED bracket 1, the current method can only realize the positive and negative polarity of adjacent LED chips 11 on the series circuit through gold wires in sequence. electrical connection between poles. It can be seen from Fig. 1 that by additionally using gold wires at the bottom of the LED bracket to realize the connection between the LED chips 11, there are many and complicated lines to be connected, and the soldering process for realizing the connection is inefficient, and is limited by the size of the LED bracket. Desoldering, virtual soldering or even soldering errors are prone to occur, resulting in high product cost, poor product quality and poor reliability, and what is shown in Figures 1-2 is only the simplest series connection between LED chips 11. If it is necessary to realize a series-parallel hybrid connection between LED chips or other complicated connection methods in an LED bracket, it is basically impossible to realize in the current LED bracket structure.
发明内容Contents of the invention
本发明提供的LED及发光装置，主要解决的技术问题是：解决现有LED支架不能承担电路布线的问题。The LED and the lighting device provided by the present invention mainly solve the technical problem of solving the problem that the existing LED bracket cannot undertake circuit wiring.
为解决上述技术问题，本发明提供一种LED，包括正面为平面的基板，位于所述基板正面之上且与所述基板绝缘隔离的电路层以及至少一颗LED芯片，所述基板正面之上设有灯珠区域，所述LED芯片设置于所述灯珠区域内，所述电路层包括用于将所述基板上的灯珠区域内的LED芯片与其他灯珠和/或所述基板上其他器件的连接点连接的电路。In order to solve the above technical problems, the present invention provides an LED, which includes a substrate with a flat front surface, a circuit layer located on the front surface of the substrate and insulated from the substrate, and at least one LED chip. A lamp bead area is provided, and the LED chip is arranged in the lamp bead area, and the circuit layer includes an LED chip for connecting the LED chip in the lamp bead area on the substrate with other lamp beads and/or on the substrate. A circuit to which the connection points of other devices are connected.
在本发明的一种实施例中，所述灯珠区域内的LED芯片的发光峰值波长相同。In an embodiment of the present invention, the LED chips in the lamp bead area have the same luminous peak wavelength.
在本发明的一种实施例中，所述灯珠区域内设置的LED芯片包括至少两种不同发光峰值波长的LED芯片。In one embodiment of the present invention, the LED chips provided in the lamp bead area include at least two LED chips with different luminous peak wavelengths.
在本发明的一种实施例中，还包括位于所述LED芯片之上的发光转换层、透明胶层或扩散胶层。In one embodiment of the present invention, it further includes a luminescence conversion layer, a transparent adhesive layer or a diffusion adhesive layer located on the LED chip.
在本发明的一种实施例中，所述灯珠区域内的LED芯片的发光峰值波长相同，且所述LED包括发光转换层时，所述发光转换层为荧光粉胶层、荧光膜或量子点QD膜；In one embodiment of the present invention, when the LED chips in the lamp bead area have the same luminous peak wavelength, and the LED includes a luminous conversion layer, the luminous conversion layer is a fluorescent powder adhesive layer, a fluorescent film or a quantum Dot QD film;
所述灯珠区域内设置的LED芯片包括至少两种不同发光峰值波长的至少两颗LED芯片，且所述LED包括发光转换层时，所述灯珠区域内设置的LED芯片包括两种不同发光峰值波长的芯片或三种不同发光峰值波长的芯片或多种(即大于三种)不同发光峰值波长的芯片，所述发光转换层包括荧光粉胶层、荧光膜或QD膜。The LED chips arranged in the lamp bead area include at least two LED chips with at least two different light emission peak wavelengths, and when the LED includes a light emission conversion layer, the LED chips arranged in the light bead area include two different light emission peak wavelengths. Chips with peak wavelengths or chips with three different luminous peak wavelengths or chips with multiple (ie more than three) different luminous peak wavelengths, the luminescence conversion layer includes a phosphor adhesive layer, a fluorescent film or a QD film.
在本发明的一种实施例中，所述灯珠区域内的LED芯片包括以下芯片中的任意一种或至少两种的组合：In one embodiment of the present invention, the LED chips in the lamp bead area include any one or a combination of at least two of the following chips:
发光峰值波长为440nm至500nm的蓝光LED芯片；Blue LED chips with a peak emission wavelength of 440nm to 500nm;
发光峰值波长为510nm至540nm的绿光LED芯片；A green LED chip with a luminous peak wavelength of 510nm to 540nm;
发光峰值波长为550nm至570nm的黄光LED芯片；Yellow LED chips with a luminous peak wavelength of 550nm to 570nm;
发光峰值波长为620nm以上的红光LED芯片；Red LED chips with a luminous peak wavelength above 620nm;
所述发光转换层为将所述LED芯片发出的光转换成预设混色光的发光转换层。The luminescence conversion layer is a luminescence conversion layer that converts the light emitted by the LED chip into preset mixed color light.
在本发明的一种实施例中，所述预设混色光包括白光。In an embodiment of the present invention, the preset mixed color light includes white light.
在本发明的一种实施例中，所述发光转换层、透明胶层或扩散胶层通过点胶、模压或喷涂设置于所述LED芯片之上。In one embodiment of the present invention, the luminescence conversion layer, transparent adhesive layer or diffusion adhesive layer is disposed on the LED chip by dispensing, molding or spraying.
在本发明的一种实施例中，所述基板正面还设置有与基板自身绝缘隔离，且与所述电路层电连接的第一功能电连接区，和/或，所述基板背面设置有与基板绝缘隔离，且与所述电路层电连接的第二功能电连接区。In one embodiment of the present invention, the front side of the substrate is further provided with a first functional electrical connection area which is insulated from the substrate itself and electrically connected to the circuit layer, and/or, the back side of the substrate is provided with a The substrate is insulated and isolated, and is a second functional electrical connection area electrically connected to the circuit layer.
在本发明的一种实施例中，所述电路层上还设置有保护涂层，绝缘保护膜和金属镀层中的至少一种；In one embodiment of the present invention, at least one of a protective coating, an insulating protective film and a metal plating layer is provided on the circuit layer;
所述保护涂层包括防焊油墨涂层，所述保护膜包括绝缘反光膜，所述金属镀层为单层金属层或由至少两种金属层组成的复合层金属层。The protective coating includes a solder resist ink coating, the protective film includes an insulating reflective film, and the metal coating is a single-layer metal layer or a composite metal layer composed of at least two metal layers.
在本发明的一种实施例中，所述基板上包括至少两个灯珠区域，所述电路层包括与所述各灯珠区域内待放置的LED芯片的正极引脚和负极引脚分别对应的正极引脚焊接区和负极引脚焊接区，以及将所述至少两个灯珠区域进行电连接的电路。In one embodiment of the present invention, the substrate includes at least two lamp bead areas, and the circuit layer includes LED chips corresponding to the positive pins and negative pins of the LED chips to be placed in the respective lamp bead areas. The positive pin welding area and the negative pin welding area, and a circuit for electrically connecting the at least two lamp bead areas.
在本发明的一种实施例中，所述基板上具有一个灯珠区域，所述电路层包括与所述灯珠区域内待放置的LED芯片的正极引脚和负极引脚分别对应的正极引脚焊接区和负极引脚焊接区，所述灯珠区域中用于放置一颗LED芯片或至少两颗LED芯片。In one embodiment of the present invention, there is a lamp bead area on the substrate, and the circuit layer includes positive pins corresponding to the positive pins and negative pins of the LED chips to be placed in the lamp bead area, respectively. The pin welding area and the negative pin welding area are used to place one LED chip or at least two LED chips in the lamp bead area.
在本发明的一种实施例中，至少一个所述灯珠区域内设置有至少两颗LED芯片，所述电路层还包括实现灯珠区域内各LED芯片之间电连接的芯片连接电路；所述至少两颗LED芯片之间通过所述芯片连接电路实现连接。In one embodiment of the present invention, at least two LED chips are arranged in at least one of the lamp bead regions, and the circuit layer further includes a chip connection circuit for realizing the electrical connection between the LED chips in the lamp bead region; The at least two LED chips are connected through the chip connection circuit.
为解决上述技术问题，本发明实施例还提供一种发光装置，包括上述任一项所述的LED，所述发光装置为照明装置、光信号指示装置、补光装置或背光装置。In order to solve the above-mentioned technical problems, an embodiment of the present invention further provides a light-emitting device, including the LED described in any one of the above, and the light-emitting device is an illumination device, an optical signal indicating device, a supplementary light device or a backlight device.
本发明的有益效果是：The beneficial effects of the present invention are:
本发明提供的LED及发光装置，LED所采用的LED支架包括正面为平面的基板和设置于基板上、与基板绝缘隔离的电路层，也即LED支架自身就布设有电路层，该电路层包括用于将基板上的灯珠区域内的LED芯片与其他灯珠和/或基板上其他器件的连接点连接的电路，这样当需要将LED与其他LED电连接或与其他器件电连接时，可直接通过LED支架自身的电路层实现与其他灯珠或器件的连接，并不需要额外采用电路板，既能简化连接结构，又能避免采用电路板导致的尺寸和成本的增加，能更好的应用于各种应用场景；同时能提升利用该LED制得的背光单元的可靠性和稳定性。In the LED and light-emitting device provided by the present invention, the LED bracket used by the LED includes a substrate with a flat front surface and a circuit layer arranged on the substrate and insulated from the substrate, that is, the LED bracket itself is provided with a circuit layer, and the circuit layer includes A circuit for connecting LED chips in the area of lamp beads on the substrate to other lamp beads and/or connection points of other devices on the substrate, so that when it is necessary to electrically connect the LED to other LEDs or to other devices, it can The connection with other lamp beads or devices is realized directly through the circuit layer of the LED bracket itself, without the need for additional circuit boards, which can not only simplify the connection structure, but also avoid the increase in size and cost caused by the use of circuit boards. Applied to various application scenarios; at the same time, the reliability and stability of the backlight unit made by using the LED can be improved.
进一步地，本发明中，需要在一个灯珠区域内设置多颗LED芯片时，电路层还可包括实现灯珠区域内的LED芯片之间电连接的电路，也即实现设置在LED支架一个灯珠区域内的多颗LED芯片之间连接(可以是串联、并联或串并联混合等)的电路已经预先在LED支架内部设好，在使用时只需将设置于支架内的LED芯片的正、负引脚分别与支架内对应的正极引脚焊接区和负极引脚焊接区连接即可，既能简单、可靠的实现支架内LED芯片之间的连接，满足各种场景对支架内的LED芯片之间的各种连接要求，又能保证产品的质量和良品率，提升LED产品的生产效率，进一步降低成本。Further, in the present invention, when it is necessary to arrange multiple LED chips in one lamp bead area, the circuit layer may also include a circuit for realizing the electrical connection between the LED chips in the lamp bead area, that is, to realize a lamp set on the LED bracket. The circuit for connecting multiple LED chips in the bead area (can be series, parallel or series-parallel hybrid, etc.) has been pre-set inside the LED bracket. The negative pins can be connected to the corresponding positive pin welding area and negative pin welding area in the bracket respectively, which can realize the connection between LED chips in the bracket simply and reliably, and meet various scenarios for LED chips in the bracket Various connection requirements between them can ensure the quality and yield of products, improve the production efficiency of LED products, and further reduce costs.
附图说明Description of drawings
图1为一种LED结构的俯视图；Fig. 1 is a top view of an LED structure;
图2为图1中的LED结构的剖视图；Fig. 2 is a sectional view of the LED structure in Fig. 1;
图3为本发明实施例一提供的电路层高于基板正面的LED支架结构示意图；Fig. 3 is a schematic diagram of the structure of the LED bracket with the circuit layer higher than the front of the substrate provided by Embodiment 1 of the present invention;
图4为本发明实施例一提供的电路层与基板正面齐平的LED支架结构示意图；Fig. 4 is a schematic structural diagram of an LED bracket in which the circuit layer is flush with the front of the substrate provided by Embodiment 1 of the present invention;
图5为本发明实施例一提供的绝缘层为整体结构的LED支架结构示意图；Fig. 5 is a schematic structural diagram of an LED bracket with an insulating layer as a whole structure provided by Embodiment 1 of the present invention;
图6为本发明实施例一提供的绝缘层与电路层形状相适配的LED支架结构示意图；Fig. 6 is a schematic structural diagram of an LED bracket in which the shape of the insulating layer and the circuit layer are adapted according to Embodiment 1 of the present invention;
图7为本发明实施例一提供的具有多个围坝的LED支架结构示意图；Fig. 7 is a schematic structural diagram of an LED bracket with multiple dams provided by Embodiment 1 of the present invention;
图8为本发明实施例一提供的具有导电基板的LED支架在基板背面设置功能电连接区的结构示意图；Fig. 8 is a schematic structural view of an LED bracket with a conductive substrate provided in Embodiment 1 of the present invention, with a functional electrical connection area set on the back of the substrate;
图9为本发明实施例一提供的具有绝缘基板的LED支架在基板背面设置功能电连接区的结构示意图一；Fig. 9 is a first structural schematic diagram of the LED bracket with an insulating substrate provided with a functional electrical connection area on the back of the substrate provided by Embodiment 1 of the present invention;
图10-1为本发明实施例一提供的具有绝缘基板的LED支架在基板背面设置功能电连接区的结构示意图二；Fig. 10-1 is a schematic diagram of the second structure of the LED bracket with an insulating substrate provided with a functional electrical connection area on the back of the substrate provided by Embodiment 1 of the present invention;
图10-2为图10-1中设置有连接器的结构示意图；Figure 10-2 is a schematic diagram of the structure provided with connectors in Figure 10-1;
图11-1为本发明实施例一提供的具有绝缘基板的LED支架在电路层设置功能电连接区的结构示意图；Figure 11-1 is a schematic structural view of the LED bracket with an insulating substrate provided in Embodiment 1 of the present invention with a functional electrical connection area on the circuit layer;
图11-2为图11-1中的第一功能电连接区中的金手指接口示意图；Figure 11-2 is a schematic diagram of the golden finger interface in the first functional electrical connection area in Figure 11-1;
图12-1为本发明实施例一提供的具有导电基板的LED支架在基板正面和背面同时设置功能电连接区的结构示意图；Figure 12-1 is a schematic structural view of the LED bracket with a conductive substrate provided by Embodiment 1 of the present invention, with functional electrical connection areas on the front and back of the substrate at the same time;
图12-2为图12-1中的第一功能电连接区中的电连接接口结构示意图；Fig. 12-2 is a schematic diagram of the structure of the electrical connection interface in the first functional electrical connection area in Fig. 12-1;
图13-1为本发明实施例二提供的具有导电平基板、且LED芯片正装在基板上的LED结构示意图；Fig. 13-1 is a schematic diagram of the LED structure provided by Embodiment 2 of the present invention with a conductive flat substrate and LED chips being mounted on the substrate;
图13-2为本发明实施例二提供的具有导电平基板、将纵向的四个固晶区划分为一个灯珠区域、且LED芯片正装在基板上的LED结构的俯视图；Fig. 13-2 is a top view of the LED structure provided by Embodiment 2 of the present invention, which has a conductive flat substrate, divides four vertical die-bonding areas into one lamp bead area, and has LED chips mounted on the substrate;
图13-3为本发明实施例二提供的具有导电平基板、将一个固晶区划分为一个灯珠区域、且LED芯片正装在基板上的LED结构的俯视图；Fig. 13-3 is a top view of the LED structure provided by Embodiment 2 of the present invention, which has a conductive flat substrate, divides a die-bonding area into a lamp bead area, and LED chips are mounted on the substrate;
图13-4为本发明实施例二提供的具有导电平基板、具有荧光胶层、且LED芯片为正装LED芯片的结构示意图；Fig. 13-4 is a structural schematic diagram of a conductive flat substrate, a fluorescent adhesive layer, and a formally mounted LED chip provided by Embodiment 2 of the present invention;
图13-5为本发明实施例二提供的LED芯片包括红光LED芯片、蓝光LED芯片和绿光LED芯片的示意图；13-5 is a schematic diagram of the LED chips provided by Embodiment 2 of the present invention including red LED chips, blue LED chips and green LED chips;
图13-6为本发明实施例二提供的LED芯片包括红光LED芯片、蓝光LED芯片、绿光LED芯片和发出白光的LED芯片单元的示意图；Fig. 13-6 is a schematic diagram of the LED chip provided by Embodiment 2 of the present invention including a red LED chip, a blue LED chip, a green LED chip and an LED chip unit emitting white light;
图14为本发明实施例二提供的具有绝缘平基板、且LED芯片正装在电路层上的LED结构示意图；Fig. 14 is a schematic diagram of the LED structure provided by Embodiment 2 of the present invention with an insulating flat substrate and LED chips mounted on the circuit layer;
图15为本发明实施例二提供的具有导电平基板、且LED芯片正装在绝缘层上的LED结构示意图；Fig. 15 is a schematic diagram of the LED structure provided by Embodiment 2 of the present invention with a conductive flat substrate and LED chips mounted on the insulating layer;
图16为本发明实施例二提供的具有导电平基板、且LED芯片倒装在基板上的LED结构示意图；Fig. 16 is a schematic diagram of the LED structure provided by Embodiment 2 of the present invention with a conductive flat substrate and LED chips flip-chip on the substrate;
其中，图1-图2中的附图标记1为LED支架，11为LED芯片；图3中的附图标记31为基板，32为电路层；图4中的附图标记41为基板，42为电路层；图5中的附图标记51为基板，52为电路层，53为绝缘层；图6中的附图标记61为基板，62为电路层，63为绝缘层；图7中的附图标记71为基板，721为电路，74为围坝；图8中的附图标记81为导电基板，82为电路层，83为第一绝缘层，812为通孔，84为导电体，85为第二绝缘层；图9中的附图标记91为绝缘基板，92为电路层，912为通孔，94为金属导电体；图10-1和图10-2中的附图标记101为绝缘基板，102为电路层，1012为通孔，104为金属导电层，105为连接器；图11-1和图11-2中的附图标记111为绝缘基板，112为电路层，116为第一功能电连接区，1161为金手指接口；图12-1和图12-2中的附图标记121为导电基板，122为电路层，123为第一绝缘层，124为金属导电体，1212为通孔，125为第二绝缘层，126为第一功能电连接区，1261为作为电连接接口的焊接点；图13-1、图13-2、图13-3、图13-4、图13-5、图13-6中的附图标记131为基板，132为LED芯片，133为电路层，134为金属线，135为绝缘层，136为固晶区，1321为LED芯片132正极引脚，1322为LED芯片132负极引脚，1331为正极引脚焊接区，1332为负极引脚焊接区，137为灯珠区域，138为将两个灯珠区域137进行电连接的电路，139为荧光胶层；图14中的附图标记141为基板，142为LED芯片，143为电路层，144为金属线，1421为LED芯片142正极引脚，1422为LED芯片142负极引脚，1431为正极引脚焊接区，1432为负极引脚焊接区；图15中的附图标记151为基板，152为LED芯片，153为电路层，154为金属线，155为绝缘层，1521为LED芯片152正极引脚，1522为LED芯片152负极引脚，1531为正极引脚焊接区，1532为负极引脚焊接区；图16中的附图标记161为基板，162为LED芯片，163为电路层，164为绝缘层，1621为LED芯片162正极引脚，1622为LED芯片162负极引脚，1631为正极引脚焊接区，1632为负极引脚焊接区。Among them, the reference numeral 1 in Fig. 1-Fig. 2 is the LED bracket, 11 is the LED chip; the reference numeral 31 in Fig. 3 is the substrate, and 32 is the circuit layer; the reference numeral 41 in Fig. 4 is the substrate, 42 It is a circuit layer; the reference numeral 51 in Fig. 5 is a substrate, 52 is a circuit layer, and 53 is an insulating layer; the reference numeral 61 in Fig. 6 is a substrate, 62 is a circuit layer, and 63 is an insulating layer; in Fig. 7 Reference numeral 71 is a substrate, 721 is a circuit, and 74 is a dam; reference numeral 81 in FIG. 8 is a conductive substrate, 82 is a circuit layer, 83 is a first insulating layer, 812 is a through hole, and 84 is a conductor. 85 is the second insulating layer; the reference numeral 91 in Fig. 9 is an insulating substrate, 92 is a circuit layer, 912 is a through hole, and 94 is a metal conductor; the reference numeral 101 in Fig. 10-1 and Fig. 10-2 is an insulating substrate, 102 is a circuit layer, 1012 is a through hole, 104 is a metal conductive layer, and 105 is a connector; the reference numeral 111 in Fig. 11-1 and Fig. 11-2 is an insulating substrate, 112 is a circuit layer, and 116 It is the first functional electrical connection area, 1161 is the golden finger interface; the reference numeral 121 in Figure 12-1 and Figure 12-2 is a conductive substrate, 122 is a circuit layer, 123 is a first insulating layer, and 124 is a metal conductor , 1212 is a through hole, 125 is a second insulating layer, 126 is a first functional electrical connection area, 1261 is a welding point as an electrical connection interface; Figure 13-1, Figure 13-2, Figure 13-3, Figure 13- 4. Reference numeral 131 in Fig. 13-5 and Fig. 13-6 is a substrate, 132 is an LED chip, 133 is a circuit layer, 134 is a metal wire, 135 is an insulating layer, 136 is a crystal bonding area, and 1321 is an LED chip 132 is the positive pin, 1322 is the negative pin of the LED chip 132, 1331 is the positive pin welding area, 1332 is the negative pin welding area, 137 is the lamp bead area, and 138 is a circuit for electrically connecting the two lamp bead areas 137 , 139 is a fluorescent adhesive layer; the reference numeral 141 in Fig. 14 is a substrate, 142 is an LED chip, 143 is a circuit layer, 144 is a metal wire, 1421 is a positive pin of the LED chip 142, and 1422 is a negative pin of the LED chip 142 , 1431 is the positive electrode pin welding area, 1432 is the negative electrode pin welding area; the reference numeral 151 in Fig. 15 is the substrate, 152 is the LED chip, 153 is the circuit layer, 154 is the metal wire, 155 is the insulating layer, and 1521 is the 1522 is the positive pin of LED chip 152, 1522 is the negative pin of LED chip 152, 1531 is the welding area of positive pin, 1532 is the welding area of negative pin; reference numeral 161 in Fig. 16 is the substrate, 162 is the LED chip, 163 is In the circuit layer, 164 is an insulating layer, 1621 is the positive pin of the LED chip 162, 1622 is the negative pin of the LED chip 162, 1631 is the welding area of the positive pin, and 1632 is the welding area of the negative pin.
具体实施方式Detailed ways
为了使本发明的目的、技术方案及优点更加清楚明白，下面通过具体实施方式结合附图对本发明实施例作进一步详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本发明，并不用于限定本发明。In order to make the object, technical solution and advantages of the present invention clearer, the embodiments of the present invention will be further described in detail below through specific implementation manners in conjunction with the accompanying drawings. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.
实施例一：Embodiment one:
为了解决现有LED支架仅能起到对LED芯片起到保护和将LED芯片的正、负极引出的作用，而不能承担电路布线而导致的各种问题，本实施例提供了一种利用带电路的LED支架制得的LED，该LED支架自带的电路可以满足将基板上的灯珠区域内待放置的LED芯片与其他灯珠(可以是同一基板上的其他灯珠，也可以是在其他基板上形成的灯珠)和/或基板上其他器件(理论上可以是其他任意器件，包括但不限于各种芯片、电阻、电容以及其他电路构成的器件等，且这些器件可以设置在基板上与LED封装成为一个整体，也可以不设置在基板上，且可位于LED支架外)的连接点(可以是各种电连接点)连接的电路。当需要将LED与其他LED电连接或与其他器件电连接时，可直接通过LED支架自身的电路层实现与其他灯珠或器件的连接，并不需要额外采用电路板，既能简化连接结构，又能避免采用电路板导致的尺寸和成本的增加。In order to solve the problems caused by the existing LED brackets, which can only protect the LED chips and lead out the positive and negative poles of the LED chips, but cannot undertake circuit wiring, this embodiment provides a The LED made of the LED bracket, the circuit of the LED bracket can meet the requirements of connecting the LED chip to be placed in the lamp bead area on the substrate with other lamp beads (it can be other lamp beads on the same substrate, or it can be in other lamp beads) lamp beads formed on the substrate) and/or other devices on the substrate (in theory, it can be any other device, including but not limited to various chips, resistors, capacitors and other circuit devices, etc., and these devices can be set on the substrate A circuit connected to a connection point (which can be a variety of electrical connection points) that is integrated with the LED package, or not arranged on the substrate, and can be located outside the LED bracket. When the LED needs to be electrically connected to other LEDs or to other devices, it can be directly connected to other lamp beads or devices through the circuit layer of the LED bracket itself, without additional circuit boards, which can simplify the connection structure. In addition, the increase in size and cost caused by the use of circuit boards can be avoided.
在本实施例中，当需要在一个灯珠区域内设置多颗LED芯片时，电路层还可包括实现灯珠区域内的LED芯片之间电连接的电路，而不需要在LED外额外采用PCB板或在LED支架内额外通过金线实现LED芯片之间的电连接，该LED支架的使用可在很大程度上提升LED产品的可靠性、通用性和良品率，降低LED产品的成本。In this embodiment, when multiple LED chips need to be arranged in one lamp bead area, the circuit layer can also include a circuit for realizing the electrical connection between the LED chips in the lamp bead area, without additionally using a PCB outside the LED The electrical connection between the LED chips can be achieved through the gold wire on the board or in the LED bracket. The use of the LED bracket can greatly improve the reliability, versatility and yield of LED products, and reduce the cost of LED products.
本实施例中，基板之上的一个灯珠区域是指在基板上设置LED芯片以形成一颗灯珠的区域，且应当理解的是，本实施例中的基板之上的灯珠区域是指空间位于基板上方，包括灯珠区域直接在基板上设置，也包括在基板上的绝缘层或电路层上设置灯珠区域，且具体可根据应用场景灵活设定。且该灯珠区域可以包括至少一个固晶区。In this embodiment, one lamp bead area on the substrate refers to the area where LED chips are arranged on the substrate to form one lamp bead, and it should be understood that the lamp bead area on the substrate in this embodiment refers to The space is located above the substrate, including setting the lamp bead area directly on the substrate, and also including setting the lamp bead area on the insulating layer or circuit layer on the substrate, and the details can be flexibly set according to the application scenario. And the lamp bead area may include at least one crystal-bonding area.
应当理解的是，在本实施例中，电路层与基板之间的绝缘隔离方式可以灵活设定。例如，当基板自身为绝缘基板时，则电路层可以直接设置在基板上，此时电路层与基板之间就已是绝缘隔离状态。当基板为导电基板时，则可以在基板与电路层之间设置一层绝缘层，或者通过其他的任意绝缘隔离方式实现绝缘隔离。It should be understood that, in this embodiment, the insulation and isolation manner between the circuit layer and the substrate can be flexibly set. For example, when the substrate itself is an insulating substrate, the circuit layer can be directly disposed on the substrate, and at this time, the circuit layer and the substrate are already in a state of insulation and isolation. When the substrate is a conductive substrate, an insulating layer may be provided between the substrate and the circuit layer, or insulation isolation may be achieved by any other insulation isolation method.
在本实施例中，导电基板可以为各种导电材质构成的基板，例如可为各种金属导电基板，包括但不限于铜基板、铝基板、铁基板；导电基板也可以为包含导电材料的混合材料导电基板，例如导电橡胶等。In this embodiment, the conductive substrate can be a substrate made of various conductive materials, such as various metal conductive substrates, including but not limited to copper substrates, aluminum substrates, and iron substrates; the conductive substrate can also be a mixture of conductive materials. Material Conductive substrate, such as conductive rubber, etc.
在本实施例中，绝缘基板可以为各种绝缘材料构成的基板，当然也可以包含内部含导电材料，外部由绝缘材料构成，整体不导电的基板。例如绝缘类材料可包括但不限环氧树脂类(EP，Epoxide resin)、耐高温尼龙(PPA塑料)、聚邻苯二甲酰胺(PPA，Polyphthalamide)、聚对苯二甲酸1，4-环己烷二甲醇酯(PCT，Poly1，4-cyclohexylenedimethylene terephthalate)、环氧模塑料(EMC，Epoxy molding compound)、不饱和聚酯(UP)树脂、液晶聚合物(LCP，Liquid Crystal Polymer)、片状模塑料(SMC，Sheet moldingcompound)、涤纶树脂(PET，Polyethylene terephthalate)、聚碳酸酯(PC，Polycarbonate)、聚己二酰己二胺(nylon66)。In this embodiment, the insulating substrate may be a substrate made of various insulating materials, of course, it may also include a substrate containing conductive materials inside, an outside made of insulating materials, and a non-conductive substrate as a whole. For example, insulating materials may include but not limited to epoxy resin (EP, Epoxide resin), high temperature resistant nylon (PPA plastic), polyphthalamide (PPA, Polyphthalamide), polyterephthalic acid 1,4-ring Hexane dimethanol ester (PCT, Poly1,4-cyclohexylenedimethylene terephthalate), epoxy molding compound (EMC, Epoxy molding compound), unsaturated polyester (UP) resin, liquid crystal polymer (LCP, Liquid Crystal Polymer), flake Molding compound (SMC, Sheet molding compound), polyester resin (PET, Polyethylene terephthalate), polycarbonate (PC, Polycarbonate), polyhexamethylene adipamide (nylon66).
在本实施例中，基板可以为正面为平面的平面基板，也可以为正面具有凸起结构或下凹结构的非平面基板，且相应的凸起区域和下凹区域可以用于设置LED芯片，也即凸起区域或下凹区域可以作为固晶区。且本实施例中，在凸起区域或下凹区域的整体或部分可以覆盖电路层，也可以不覆盖电路层，具体可根据实际需求和应用场景灵活设定。In this embodiment, the substrate can be a planar substrate with a flat front, or a non-planar substrate with a raised structure or a concave structure on the front, and the corresponding raised areas and sunken areas can be used to set LED chips, That is, the raised area or the sunken area can be used as a die-bonding area. Moreover, in this embodiment, the whole or part of the raised area or the sunken area may be covered with the circuit layer, or may not be covered with the circuit layer, which can be flexibly set according to actual needs and application scenarios.
在本实施例中，位于基板上的电路层与基板正面之间可以齐平设置，也可以高于基板正面，或略低于基板正面，具体可根据采用制作LED支架的工艺、具体应用场景等因素灵活设置。例如，在一种示例结构中，电路层高于基板正面，参见图3所示，图3中电路层32高于基板31的基板正面。在另一种示例中，参见图4所示，图4中电路层42与基板41的上表面齐平。In this embodiment, the circuit layer on the substrate can be arranged flush with the front of the substrate, or it can be higher than the front of the substrate, or slightly lower than the front of the substrate, depending on the process used to make the LED bracket, specific application scenarios, etc. Factors can be set flexibly. For example, in an exemplary structure, the circuit layer is higher than the front surface of the substrate, as shown in FIG. 3 , in which the circuit layer 32 is higher than the front surface of the substrate 31 . In another example, as shown in FIG. 4 , in FIG. 4 the circuit layer 42 is flush with the upper surface of the substrate 41 .
另外，应当理解的是，在本实施例中，当需要在基板与电路层之间增加绝缘层，且该绝缘层是用于将基板与电路层之间进行绝缘隔离时，所设置的绝缘层可以直接将基板上与电路层对应的区域整个覆盖，此时的绝缘层为一个整体结构；例如，参见图5所示，在基板51与电路层52之间设置有绝缘层53，绝缘层53覆盖基板51上与电路层52对应的区域。在本实施例中，该绝缘层也可以与电路层的形状相适配，只要能可靠的将电路层与基板进行绝缘隔离即可。例如，参见图6所示，在基板61与电路层62之间设置有绝缘层63，绝缘层63与电路层62的形状尺寸相匹配，电路层62未覆盖的区域绝缘层63也未覆盖。In addition, it should be understood that, in this embodiment, when an insulating layer needs to be added between the substrate and the circuit layer, and the insulating layer is used to insulate and isolate the substrate and the circuit layer, the provided insulating layer The entire area corresponding to the circuit layer on the substrate can be directly covered, and the insulating layer at this time is an integral structure; for example, as shown in FIG. The area corresponding to the circuit layer 52 on the substrate 51 is covered. In this embodiment, the insulating layer may also be adapted to the shape of the circuit layer, as long as the circuit layer and the substrate can be reliably insulated and isolated. For example, as shown in FIG. 6 , an insulating layer 63 is provided between the substrate 61 and the circuit layer 62 . The shape and size of the insulating layer 63 match the circuit layer 62 , and the insulating layer 63 does not cover the area not covered by the circuit layer 62 .
本实施例中，绝缘层可以采用各种用于进行绝缘隔离的绝缘材料，例如包括但不限于绝缘漆、绝缘胶、绝缘纸、绝缘纤维制品、塑料、橡胶、漆布纸、玻璃、陶瓷等。In this embodiment, the insulating layer can use various insulating materials for insulation and isolation, such as including but not limited to insulating varnish, insulating glue, insulating paper, insulating fiber products, plastics, rubber, varnished paper, glass, ceramics, and the like.
在本实施例中，电路层包括正极引脚焊接区和负极引脚焊接区时，正极引脚焊接区和负极引脚焊接区在电路层上具体的分布位置和分布方式都可以灵活设定。另外，电路层还包括实现一个灯珠区域内的各LED芯片之间连接的电路(也即芯片连接电路)时，可以包括实现LED芯片之间串联连接、并联连接、串并联混合连接等芯片连接电路中的至少一种，且具体可以根据LED支架的应用场景和需求灵活设定。In this embodiment, when the circuit layer includes a positive pin pad and a negative pin pad, the specific distribution positions and distribution methods of the positive pin pad and the negative pin pad on the circuit layer can be flexibly set. In addition, when the circuit layer also includes a circuit (that is, a chip connection circuit) that realizes the connection between LED chips in a lamp bead area, it can include chip connections such as serial connection, parallel connection, and series-parallel hybrid connection between LED chips. At least one of the circuits, and the details can be flexibly set according to the application scenarios and requirements of the LED bracket.
在本实施例中，基板上的灯珠区域的个数可以灵活设定，且各灯珠区域内所设置的LED芯片个数也可以灵活设定。例如可以设置基板上包括至少两个灯珠区域，电路层包括实现各灯珠区域之间连接的电路，且一个灯珠区域内可设置一颗LED芯片，也可设置至少两颗LED芯片，电路层上包括与各灯珠区域内的LED芯片连接的引脚焊接区。且可选地，本实施例中的LED支架可以采用围坝，也可以不采用围坝，具体都可格局实际需求灵活设定。例如，在一种示例中，可以采用围坝，且此时一个灯珠区域可以对应一个围坝。In this embodiment, the number of lamp bead areas on the substrate can be flexibly set, and the number of LED chips arranged in each lamp bead area can also be flexibly set. For example, it can be set that the substrate includes at least two lamp bead areas, and the circuit layer includes a circuit to realize the connection between each lamp bead area, and one LED chip or at least two LED chips can be arranged in one lamp bead area, and the circuit The layer includes pin welding areas connected to the LED chips in the area of each lamp bead. And optionally, the LED bracket in this embodiment may use a dam, or may not use a dam, and the specific layout can be flexibly set according to actual requirements. For example, in an example, a dam may be used, and at this time, one light bead area may correspond to one dam.
例如，在一种实施方式中，基板上包括至少两个灯珠区域，电路层包括与各灯珠区域内待放置的LED芯片的正极引脚和负极引脚分别对应的正极引脚焊接区和负极引脚焊接区，以及将至少两个灯珠区域进行电连接的电路。每个灯珠区域中的LED芯片的数量可以设置为相同，也可设置为不同，具体可根据实际情况进行灵活设置。For example, in one embodiment, the substrate includes at least two lamp bead areas, and the circuit layer includes a positive pin welding area and an Negative pin welding area, and a circuit for electrically connecting at least two lamp bead areas. The number of LED chips in each lamp bead area can be set to be the same or different, and can be flexibly set according to actual conditions.
在另一种实施方式中，基板上具有一个灯珠区域，电路层包括与灯珠区域内待放置的LED芯片的正极引脚和负极引脚分别对应的正极引脚焊接区和负极引脚焊接区。灯珠区域中的LED芯片的数量可以设置为一颗，也可设置为两颗及以上，具体可根据实际情况进行灵活设置。In another embodiment, there is a lamp bead area on the substrate, and the circuit layer includes a positive pin welding area and a negative pin welding area respectively corresponding to the positive pin and the negative pin of the LED chip to be placed in the lamp bead area. Area. The number of LED chips in the lamp bead area can be set to one, or two or more, which can be flexibly set according to the actual situation.
在又一种实施方式中，至少一个灯珠区域内设置有至少两颗LED芯片，电路层还包括实现灯珠区域内各LED芯片之间电连接的芯片连接电路；至少两颗LED芯片之间通过芯片连接电路实现连接。In yet another embodiment, at least two LED chips are arranged in at least one lamp bead area, and the circuit layer also includes a chip connection circuit for realizing electrical connection between the LED chips in the lamp bead area; between at least two LED chips The connection is made through the chip connection circuit.
基板上设置多个围坝时，此时一个围坝和该围坝内的LED芯片相当于利用现有LED支架制得的一个LED灯珠，也即本实施例提供的LED支架可以在一个基板上实现设置多个灯珠，且该多个灯珠之间可通过LED支架内置的电路层实现串联或并联或串并联结合的连接，相对现有LED支架，进一步提升了集成度，且相对现有多LED组合使用的方式，降低了产品成本，减小了产品尺寸。When multiple dams are set on the substrate, one dam and the LED chips in the dam are equivalent to one LED lamp bead made by using the existing LED bracket, that is, the LED bracket provided in this embodiment can be mounted on one substrate. A plurality of lamp beads can be set on the top, and the multiple lamp beads can be connected in series or in parallel or in combination of series and parallel through the built-in circuit layer of the LED bracket. Compared with the existing LED bracket, the integration degree is further improved, and compared with the current LED bracket. The combined use of multiple LEDs reduces product cost and product size.
参见图7所示，该图中在基板71(图中未画出电路层，应当理解的是，围坝也可能直接设置在电路层上，或者一部分位于电路层上，一部分位于基板上)上设置了多个围坝74，围坝74内可以包括一个灯珠区域，且一个灯珠区域内至少可以仅设置一颗LED芯片，且一个灯珠区域内设置多颗LED芯片时，这多颗LED芯片之间可以是并联，也可以是串联，或者串、并联结合。在本实施例中，电路层还包括设置于围坝74之外，用于将各围坝74内的LED芯片连接的电路721。此时可以看成是以围坝为单位，一个围坝和该围坝内的LED芯片与采用现有LED支架的LED等同，这样本实施例就在一个基板上实现了类似现有通过PCB板集成设置多颗LED的结构，且成本比现有的设置方式低，尺寸也更小，集成度更高。Referring to FIG. 7 , in this figure, the substrate 71 (the circuit layer is not shown in the figure, it should be understood that the dam may also be directly arranged on the circuit layer, or a part is located on the circuit layer, and a part is located on the substrate) A plurality of dams 74 are set, and one lamp bead area can be included in the dam 74, and at least one LED chip can be arranged in one lamp bead area, and when multiple LED chips are arranged in one lamp bead area, the multiple LED chips The LED chips can be connected in parallel or in series, or a combination of series and parallel. In this embodiment, the circuit layer further includes a circuit 721 disposed outside the dams 74 for connecting the LED chips in each dam 74 . At this time, it can be regarded as taking the dam as the unit. A dam and the LED chip in the dam are equivalent to the LED using the existing LED bracket. The structure of integrating multiple LEDs is lower in cost, smaller in size and higher in integration than the existing arrangement.
根据上述示例可知，在本实施例中，基板上所设置的电路层除了可实现灯珠之间的连接和/或灯珠与其他器件的连接，还可实现灯珠区域内各LED芯片之间的连接。According to the above example, in this embodiment, the circuit layer provided on the substrate can not only realize the connection between the lamp beads and/or the connection between the lamp beads and other devices, but also realize the connection between the LED chips in the lamp bead area. Connection.
根据需求，本实施例中的电路层还可在基板的整个正面进行设置，或至少一部分延伸出基板上的灯珠区域以布设与其他灯珠和/或器件连接的电路，例如包括但不限于的驱动电路(该驱动电路可以是驱动LED芯片的驱动电路，也可是整个电路层或其他器件的驱动电路)，控制LED芯片的控制电路(包括但不限于区域调整(local dimming)电路)等。According to requirements, the circuit layer in this embodiment can also be arranged on the entire front surface of the substrate, or at least a part of it extends out of the lamp bead area on the substrate to lay out circuits connected to other lamp beads and/or devices, including but not limited to The driving circuit (the driving circuit may be the driving circuit for driving the LED chip, or the driving circuit for the entire circuit layer or other devices), the control circuit for controlling the LED chip (including but not limited to the local dimming circuit), etc.
在本实施例中，上述控制电路和驱动电路可以仅仅是实现控制和驱动时所需的基础线路，而不包括实现控制和驱动所需的各种电子元器件(例如电阻、电容、各种芯片(例如驱动芯片))，各种元器件在这些基础线上连接的点即为上述器件的连接点。且本实施例中实现控制或驱动所需的各种电子元器件根据需求可以设置于基板正面之上，也可以设置于基板背面，或者设置于基板之外。例如当电路层包括驱动电路时，可以采用裸片形式的驱动芯片，并可将该驱动芯片设置于基板背面或正面，也即可实现将驱动芯片和/或者其他元器件集成到LED支架中，更利于缩小LED应用模块的尺寸和装配等。In this embodiment, the above-mentioned control circuit and drive circuit may only be the basic circuits required to realize control and drive, and do not include various electronic components (such as resistors, capacitors, various chips, etc.) required to realize control and drive. (such as driver chips)), the points where various components are connected on these basic lines are the connection points of the above-mentioned devices. Moreover, in this embodiment, various electronic components required for realizing control or driving can be arranged on the front surface of the substrate, or on the back surface of the substrate, or outside the substrate according to requirements. For example, when the circuit layer includes a driver circuit, a driver chip in the form of a bare chip can be used, and the driver chip can be arranged on the back or front of the substrate, that is, the driver chip and/or other components can be integrated into the LED bracket, It is more conducive to reducing the size and assembly of LED application modules.
在本实施例中，为了实现将电路层与支架外部进行连接或者便于电路层与支架内的器件或者电路层内的各模块之间的连接，可灵活的在基板背面侧和/或正面侧设置设置与基板绝缘隔离，且与基板上的电路层电连接的功能电连接区。且本实施例中所设置的功能电连接区与电路层具体连接的位置可以根据功能电连接区具体所要实现的功能具体确定。In this embodiment, in order to realize the connection between the circuit layer and the outside of the bracket or to facilitate the connection between the circuit layer and the devices in the bracket or the modules in the circuit layer, it can be flexibly arranged on the back side and/or the front side of the substrate A functional electrical connection area that is insulated from the substrate and electrically connected to the circuit layer on the substrate is provided. Moreover, the position where the functional electrical connection area and the circuit layer are specifically connected in this embodiment can be specifically determined according to the specific function to be realized by the functional electrical connection area.
在本实施例中，对于LED支架上功能电连接区的设置可以灵活设定。例如，可以不在基板背面侧引出功能电连接区，而在基板正面侧设置与基板绝缘隔离的功能电连接区(此时该功能电连接区可能直接位于基板上，也可能位于电路层上)，或者根据需求在基板背面和正面同时设置功能电连接区。在本实施例中，在基板正面侧设置功能电连接区时，可以称设置于基板正面侧的功能电连接区为第一功能电连接区，且其他器件的连接点也可设置于该第一功能电连接区内；在基板背面侧设置功能电连接区时，可以称基板背面的功能电连接区为第二功能电连接区，且根据需求，其他器件的连接点也可与该第二功能电连接区连接。本实施例中，称功能电连接区的用于与外部连接的接口为电连接接口(如上所示，可能为其他器件的连接点)，电连接接口可设置为电连接插孔，PIN脚端子，金手指接口或者焊盘接口等等。In this embodiment, the setting of the functional electrical connection area on the LED bracket can be flexibly set. For example, the functional electrical connection area may not be drawn out on the back side of the substrate, but a functional electrical connection area isolated from the substrate may be provided on the front side of the substrate (at this time, the functional electrical connection area may be directly located on the substrate or may be located on the circuit layer), Alternatively, functional electrical connection areas may be provided on the back and the front of the substrate at the same time as required. In this embodiment, when the functional electrical connection area is set on the front side of the substrate, the functional electrical connection area set on the front side of the substrate can be called the first functional electrical connection area, and the connection points of other devices can also be set on the first functional electrical connection area. In the functional electrical connection area; when the functional electrical connection area is set on the back side of the substrate, the functional electrical connection area on the back of the substrate can be called the second functional electrical connection area, and according to requirements, the connection points of other devices can also be connected to the second functional electrical connection area. The electrical connection area is connected. In this embodiment, the interface used to connect with the outside of the functional electrical connection area is called an electrical connection interface (as shown above, it may be a connection point of other devices), and the electrical connection interface can be set as an electrical connection jack, PIN pin terminal , golden finger interface or pad interface, etc.
本实施例中，在基板背面侧设置第二功能电连接区时，基板背面设置的第二功能电连接区与电路层具体连接的位置可以根据第二功能电连接区具体所要实现的功能具体确定。且在本实施例中，可以沿着基板正面到侧面然后到背面的路径实现背面第二功能电连接区与电路层的连接，也可以直接从基板正面向背面开设通孔，通过通孔内设置与电路层的相应位置进行电连接的导电体实现第二功能电连接区的设置。In this embodiment, when the second functional electrical connection area is provided on the back side of the substrate, the specific connection position between the second functional electrical connection area set on the back side of the substrate and the circuit layer can be specifically determined according to the specific function to be realized by the second functional electrical connection area. . And in this embodiment, the connection between the second functional electrical connection area on the back and the circuit layer can be realized along the path from the front of the substrate to the side and then to the back, or a through hole can be opened directly from the front of the substrate to the back, and through the through hole The conductor electrically connected to the corresponding position of the circuit layer realizes the setting of the second functional electrical connection area.
为了便于理解，本实施例下面以基本为导电基板和绝缘基板两种情况分别进行说明。For ease of understanding, the present embodiment will be described below with two cases of basically a conductive substrate and an insulating substrate.
当基板为导电基板(例如金属基板)时，导电基板与电路层之间设置有绝缘层(本示例中称之为第一绝缘层)导电基板背面设置有与导电基板绝缘隔离，且与电路层电连接的第二功能电连接区。可选地，可在导电基板上设置贯穿导电基板正面和背面的通孔，在通孔内侧壁上设置绝缘层(本示例中称之为第二绝缘层)，在通孔内设置导电体，导电体通过第二绝缘层与导电基板绝缘隔离，导电体的上端穿过第一绝缘层与电路层电连接，下端沿通孔向导电基板背面延伸作为第二功能电连接区的电连接接口。为了便于理解，本实施例结合图8所示的剖视结构为示例做进一步说明。在导电基板81上设置有第一绝缘层83和电路层82，其中，导电基板81上开设有通孔812，在通孔812的孔壁上形成有第二绝缘层85，在通孔812内设置有导电体84，导电体84穿过第一绝缘层83与电路层82上相应的位置电连接。在本实施例中，导电体84的下端作为第二功能电连接区对外的电连接接口，其可与导电基板背面齐平，或保持在通孔内略低于通孔背面的开口的位置，或者伸出导电基板81背面，但伸出部分需与导电基板81绝缘。本实施例中电连接接口为PIN脚端子时，导电体84下端延伸出通孔，与导电基板背面绝缘隔离设置的PIN脚端子，或为延伸出通孔，与导电基板背面绝缘隔离设置的金手指接口等，也即电连接接口可以设置为各种实现电连接的各种接口结构。应当理解的是，图8中的导电体84可以由各种导电材质构成，例如包括但不限于铜、铝、银等。When the substrate is a conductive substrate (such as a metal substrate), an insulating layer (referred to as the first insulating layer in this example) is provided between the conductive substrate and the circuit layer. The second functional electrical connection area for electrical connection. Optionally, a through hole penetrating the front and back of the conductive substrate may be provided on the conductive substrate, an insulating layer (referred to as a second insulating layer in this example) is provided on the inner wall of the through hole, and a conductor is provided in the through hole, The conductor is insulated and isolated from the conductive substrate through the second insulating layer, the upper end of the conductor is electrically connected to the circuit layer through the first insulating layer, and the lower end extends along the through hole to the back of the conductive substrate as an electrical connection interface of the second functional electrical connection area. For ease of understanding, this embodiment will be further described in conjunction with the cross-sectional structure shown in FIG. 8 as an example. A first insulating layer 83 and a circuit layer 82 are arranged on the conductive substrate 81, wherein a through hole 812 is opened on the conductive substrate 81, and a second insulating layer 85 is formed on the hole wall of the through hole 812. In the through hole 812 A conductor 84 is provided, and the conductor 84 is electrically connected to a corresponding position on the circuit layer 82 through the first insulating layer 83 . In this embodiment, the lower end of the conductor 84 is used as the external electrical connection interface of the second functional electrical connection area, which can be flush with the back of the conductive substrate, or kept at a position slightly lower than the opening on the back of the through hole in the through hole, Or protrude from the back of the conductive substrate 81 , but the protruding part needs to be insulated from the conductive substrate 81 . In this embodiment, when the electrical connection interface is a PIN pin terminal, the lower end of the conductor 84 extends out of a through hole, which is insulated and isolated from the back of the conductive substrate. The finger interface and the like, that is, the electrical connection interface can be configured in various interface structures for realizing electrical connection. It should be understood that the conductor 84 in FIG. 8 may be made of various conductive materials, including but not limited to copper, aluminum, silver and the like.
当基板为绝缘基板时，绝缘基板背面设置有与电路层电连接的第二功能电连接区，可选地，在绝缘基板上设置贯穿绝缘基板正面和背面的通孔，通孔内设有导电体，导电体的上端与电路层电连接，下端沿通孔向绝缘基板背面延伸作为第二功能电连接区的电连接接口。本实施例中，导电体的结构形态包括但不限于下面示例的两种形态。When the substrate is an insulating substrate, the back of the insulating substrate is provided with a second functional electrical connection area electrically connected to the circuit layer. Optionally, a through hole penetrating through the front and back of the insulating substrate is provided on the insulating substrate, and a conductive The upper end of the conductor is electrically connected to the circuit layer, and the lower end extends along the through hole to the back of the insulating substrate as an electrical connection interface of the second functional electrical connection area. In this embodiment, the structural form of the conductor includes, but is not limited to, the two forms exemplified below.
一种形态为，导电体为嵌入通孔内，尺寸与通孔尺寸相匹配的金属导电体。例如参见图9所示：图9中绝缘基板91上设置有电路层92，绝缘基板91上开设有通孔912，通孔912内设置尺寸相匹配的金属导电体94，金属导电体94上端与电路层相应位置电连接，下端作为第二功能电连接区对外的电连接接口，其可与绝缘基板背面齐平，或保持在通孔内略低于通孔背面的开口的位置，或者伸出绝缘基板背面。应当理解的是，图9中的金属导电体94可以由各种金属导电材质构成，例如包括但不限于铜、铝、银等。One form is that the conductor is a metal conductor embedded in the through hole, the size of which matches the size of the through hole. See for example as shown in Figure 9: in Figure 9, an insulating substrate 91 is provided with a circuit layer 92, an insulating substrate 91 is provided with a through hole 912, and a metal conductor 94 with a matching size is arranged in the through hole 912, and the upper end of the metal conductor 94 is connected to the The corresponding position of the circuit layer is electrically connected, and the lower end is used as the electrical connection interface of the second functional electrical connection area. Insulating substrate backside. It should be understood that the metal conductor 94 in FIG. 9 may be made of various metal conductive materials, including but not limited to copper, aluminum, silver, and the like.
一种形态为，导电体为附着在通孔孔壁上并向通孔两端开口外延伸的金属导电层，例如参见图10-1所示：图10-1中绝缘基板101上设置有电路层102，绝缘基板上开设有通孔1012，通孔1012内壁设有金属导电层104，金属导电层104上端与电路层相应位置电连接，下端作为第二功能电连接区对外的电连接接口，其可与绝缘基板背面齐平，或保持在通孔内略低于通孔背面的开口的位置，或者延伸出绝缘基板背面在通孔背面开口附近区域形成电连接接口。图10-1中的电连接接口就为一种示例的电连接插孔，在进行电连接时，外部器件(例如芯片、电阻、电容、连接器等等)的引脚或PIN脚或PIN针可插入电连接插孔与金属导电层104形成电连接。例如参见图10-2所示，连接器105的PIN针可插入通过内与金属导电层104形成电连接，从而实现电路层102中两个模块之间的电连接。One form is that the conductor is a metal conductive layer that is attached to the wall of the through hole and extends toward the openings at both ends of the through hole. For example, see FIG. 10-1 : in FIG. Layer 102, the insulating substrate is provided with a through hole 1012, the inner wall of the through hole 1012 is provided with a metal conductive layer 104, the upper end of the metal conductive layer 104 is electrically connected to the corresponding position of the circuit layer, and the lower end is used as the external electrical connection interface of the second functional electrical connection area, It can be flush with the back of the insulating substrate, or kept in the through hole at a position slightly lower than the opening on the back of the through hole, or extend out of the back of the insulating substrate to form an electrical connection interface near the opening of the back of the through hole. The electrical connection interface in Figure 10-1 is an example of an electrical connection jack. When making electrical connections, the pins or PIN pins or PIN pins of external devices (such as chips, resistors, capacitors, connectors, etc.) It can be inserted into the electrical connection socket to form an electrical connection with the metal conductive layer 104 . For example, as shown in FIG. 10-2 , the PIN pin of the connector 105 can be inserted through to form an electrical connection with the metal conductive layer 104 , so as to realize the electrical connection between two modules in the circuit layer 102 .
应当理解的是，本实施例中在基板背面引出的第二功能电连接区可以包括将LED支架与外部电源连接的支架正电极连接区和支架负电极连接区和用于与LED支架外的器件(例如包括但不限于电阻、电感、电容、各种开关、芯片等)连接的器件连接区中的至少一种，具体可以根据需求灵活设置。It should be understood that the second functional electrical connection area drawn out on the back of the substrate in this embodiment may include the positive electrode connection area and the negative electrode connection area of the support for connecting the LED support to an external power supply, and for connecting with devices outside the LED support. (For example, including but not limited to resistors, inductors, capacitors, various switches, chips, etc.) at least one of the device connection areas connected can be flexibly set according to requirements.
请参见图11-1所示，绝缘基板111上设置有电路层112，且在绝缘基板111正面上的电路层112上还设置有第一功能电连接区116，在图11-1中第一功能电连接区116设置有两个，第一功能电连接区116与电路层中其他电路的具体的连接位置则可根据具体的电路结构灵活确定。当然，根据实际需要，也可同时在绝缘基板背面设置第二功能电连接区，或者仅在绝缘基板背面设置第二功能电连接区，在绝缘基板正面则不设置第一功能电连接区。Please refer to Fig. 11-1, a circuit layer 112 is provided on the insulating substrate 111, and a first functional electrical connection area 116 is also provided on the circuit layer 112 on the front side of the insulating substrate 111. In Fig. 11-1, the first There are two functional electrical connection areas 116, and the specific connection position between the first functional electrical connection area 116 and other circuits in the circuit layer can be flexibly determined according to the specific circuit structure. Of course, according to actual needs, the second functional electrical connection area may also be provided on the back of the insulating substrate at the same time, or only the second functional electrical connection area may be provided on the back of the insulating substrate, and the first functional electrical connection area may not be provided on the front of the insulating substrate.
请参见图11-2所示，在本实施例中，第一功能电连接区116中的电连接接口可以作为金手指接口1161；应当理解的是，金手指接口中金手指的具体个数和功能则可以根据具体需求灵活设定。当然，在基板背面侧设置的各电连接接口也可以设置成金手指接口或者连接器接口。Please refer to Fig. 11-2, in this embodiment, the electrical connection interface in the first functional electrical connection area 116 can be used as the gold finger interface 1161; it should be understood that the specific number and number of gold fingers in the gold finger interface Functions can be flexibly set according to specific needs. Of course, the electrical connection interfaces provided on the back side of the substrate may also be provided as golden finger interfaces or connector interfaces.
请参见图12-1示，在导电基板121上设置有第一绝缘层123和电路层122，其中，导电基板121上开设有通孔1212，在通孔1212的孔壁上形成有第二绝缘层125，在通孔1212内设置有导电体124，导电体124上端穿过第一绝缘层123与电路层122上相应的位置电连接，导电体124的下端作为第二功能电连接区对外的电连接接口。在导电基板121的右端电路层122上还设置有第一功能电连接区126，也即在图12中导电基板121的正面和背面同时设置有功能电连接区，以为LED支架对外提供更多的接入口，更利于LED支架在各场景的灵活使用。12-1, a first insulating layer 123 and a circuit layer 122 are provided on a conductive substrate 121, wherein a through hole 1212 is opened on the conductive substrate 121, and a second insulating layer is formed on the wall of the through hole 1212. Layer 125, a conductor 124 is arranged in the through hole 1212, the upper end of the conductor 124 is electrically connected to the corresponding position on the circuit layer 122 through the first insulating layer 123, and the lower end of the conductor 124 is used as the second functional electrical connection area to the outside Electrical connection interface. On the right end circuit layer 122 of the conductive substrate 121, a first functional electrical connection area 126 is also provided, that is, a functional electrical connection area is provided on the front and back of the conductive substrate 121 in FIG. The access port is more conducive to the flexible use of LED brackets in various scenarios.
本实施例中，第一功能电连接区126中的电连接接口可以是通过直接将相应位置的电路基材层裸露在外形成的焊接点，例如参见图12-2所示，1261就是作为电连接接口的焊接点；当然，也可以向外延伸做成类似PIN脚端子的连接点，具体形态可以根据具体应用需求灵活设定。In this embodiment, the electrical connection interface in the first functional electrical connection area 126 may be a welding point formed by directly exposing the circuit substrate layer at the corresponding position, for example, as shown in FIG. 12-2, 1261 is used as an electrical connection The welding point of the interface; of course, it can also be extended outward to make a connection point similar to a PIN terminal, and the specific shape can be flexibly set according to specific application requirements.
应当理解的是，在本实施例中，当在基板正面和背面同时分别设置第一功能电连接区和第二功能电连接区时，所设置的第一功能电连接区和第二功能电连接区所对应实现的功能可以相同，也可以不同，也可以是第一功能电连接区和第二功能电连接区配合实现一种功能。It should be understood that, in this embodiment, when the first functional electrical connection area and the second functional electrical connection area are respectively provided on the front and back sides of the substrate, the set first functional electrical connection area and the second functional electrical connection area The functions corresponding to the regions may be the same or different, and the first functional electrical connection region and the second functional electrical connection region may cooperate to realize a function.
在本实施例中，为了提升LED支架的可靠性、出光效率等，可选地，还可在基板上设置的电路层上，设置保护层和金属镀层中的至少一种，且本实施例中的保护层包括但不限于保护涂层和绝缘保护膜中的至少一种；本实施例中金属镀层的设置还可便于进行器件连接时搭线。In this embodiment, in order to improve the reliability and light extraction efficiency of the LED bracket, optionally, at least one of a protective layer and a metal plating layer may be provided on the circuit layer provided on the substrate, and in this embodiment The protective layer includes but is not limited to at least one of a protective coating and an insulating protective film; the arrangement of the metal plating layer in this embodiment can also facilitate wiring when connecting devices.
例如，可以在电路层上设置各种保护涂层，应当理解的是，该保护涂层不覆盖电路层上的焊接区，该保护涂层可以起到对电路层进行保护的作用，且根据实际需求还可起到对电路层上的电路结构进行标识，和/或提升LED支架出光效率等作用。例如，本实施例中的保护涂层可以设置为防焊油墨涂层，该防焊油墨涂层可以包括白油层、绿油层和黑油层中的至少一种。例如可以在一些区域设置白油层，一些区域设置绿油层，或者一些区域设置白油层，一些区域设置黑油层，或者仅设置白油层、绿油层或黑油层，甚至根据需求设置多层油墨层等等。具体选择哪些种类的油墨层以及具体组合方式等都可灵活设定。黑油层的设置可以吸收部分光，可以对最终发射出去的光进行再次调整。又例如，可以在电路层上设置各种绝缘保护膜(也即通过覆膜的方式进行保护)，本实施例中的绝缘保护膜可以采用绝缘反光膜，例如反光柔性膜，以提升LED支架的出光率。本实施例中反光柔性膜也不该电路层上的焊接区。且应当理解的是，在一种示例中，绝缘保护层和保护涂层还可结合设置，例如可在电路层上先设置保护涂层，然后在保护涂层上设置绝缘保护层。在本实施例中，也可以采用直接在电路层上设置金属镀层，该金属镀层可为单层金属层，也可为由至少两种金属层组成的复合层金属层；例如为单层金属层时，可为单层镀银层；为复合金属层时，可以为由银层和金层或者其他金属层组成的复合层金属层。For example, various protective coatings can be provided on the circuit layer. It should be understood that the protective coating does not cover the welding area on the circuit layer, and the protective coating can protect the circuit layer. Requirements can also be used to identify the circuit structure on the circuit layer, and/or improve the light output efficiency of the LED bracket. For example, the protective coating in this embodiment can be configured as a solder resist ink coating, and the solder resist ink coating can include at least one of a white oil layer, a green oil layer and a black oil layer. For example, white oil layer can be set in some areas, green oil layer can be set in some areas, or white oil layer can be set in some areas, black oil layer can be set in some areas, or only white oil layer, green oil layer or black oil layer can be set, or even multi-layer ink layers can be set according to requirements, etc. . The types of ink layers to be selected and the specific combination methods can be flexibly set. The setting of the black oil layer can absorb part of the light, and the final emitted light can be adjusted again. For another example, various insulating protective films can be set on the circuit layer (i.e., protected by film coating), and the insulating protective film in this embodiment can be an insulating reflective film, such as a reflective flexible film, to improve the LED bracket. light output. In this embodiment, the light-reflecting flexible film does not have a soldering area on the circuit layer. And it should be understood that, in an example, the insulating protective layer and the protective coating can also be provided in combination, for example, the protective coating can be provided on the circuit layer first, and then the insulating protective layer can be provided on the protective coating. In this embodiment, it is also possible to directly arrange a metal coating on the circuit layer, and the metal coating can be a single-layer metal layer, or a composite metal layer composed of at least two metal layers; for example, a single-layer metal layer When it is a single-layer silver-plated layer; when it is a composite metal layer, it can be a composite metal layer composed of a silver layer and a gold layer or other metal layers.
本实施例提供的LED的光照射出来、呈现给用户的颜色，可以根据实际需求和应用场景进行灵活设置。LED的光照射出来、呈现给用户是何种颜色，是根据以下因素决定的：LED芯片自身发出的光的颜色、LED是否包括有发光转换层、当LED包括有发光转换层时发光转换层的颜色。The color of the light irradiated by the LED provided in this embodiment and presented to the user can be flexibly set according to actual needs and application scenarios. The color of the light emitted by the LED and presented to the user is determined by the following factors: the color of the light emitted by the LED chip itself, whether the LED includes a luminescence conversion layer, and when the LED includes a luminescence conversion layer. color.
如上所述，本实施例中基板上灯珠区域的个数以及各灯珠区域内LED芯片设置的颗数都可灵活设定。且应当理解的是，本实施例中各灯珠区域内LED芯片的颗数可以相同，也可以不同。各灯珠区域内LED芯片的发光峰值波长也可以相同或不同，也即在基板上设置的LED芯片的发光峰值波长以及发光峰值波长的组合也是可以灵活设定的，例如，本实施例中的在基板上设置的LED芯片可以包括以下芯片中的任意一种，或至少两种的任意组合：As mentioned above, in this embodiment, the number of lamp bead regions on the substrate and the number of LED chips arranged in each lamp bead region can be flexibly set. And it should be understood that, in this embodiment, the number of LED chips in each lamp bead area may be the same or different. The luminous peak wavelengths of the LED chips in each lamp bead area can also be the same or different, that is, the combination of the luminous peak wavelengths and the luminous peak wavelengths of the LED chips arranged on the substrate can also be flexibly set, for example, in this embodiment The LED chips provided on the substrate may include any one of the following chips, or any combination of at least two:
发光峰值波长在440nm至500nm的蓝光芯片；Blu-ray chip with peak emission wavelength between 440nm and 500nm;
发光峰值波长在510nm至540nm的绿光芯片；Green chip with peak emission wavelength between 510nm and 540nm;
发光峰值波长在550nm至570nm的黄光芯片；Yellow light chips with peak emission wavelengths between 550nm and 570nm;
发光峰值波长大于620nm以上的红光芯片。A red light chip with a luminous peak wavelength greater than 620nm.
但应当理解的是，上述四种芯片仅仅是本实施例中的一种示例，并不限于上述四种芯片。However, it should be understood that the above four chips are only an example in this embodiment, and are not limited to the above four chips.
在本实施例中，在基板上设置的LED芯片为上述示例的四种芯片中的一种，且基板上设置的LED芯片的颗数为至少两颗时，这至少两颗LED芯片的发光峰值波长可以相同(例如都为发光峰值波长为440nm、445nm或450nm等的蓝光芯片)，也可不同(例如一部分为发光峰值波长为440nm、445nm或450nm的蓝光芯片，另一部分为发光峰值波长为455nm、465nm或480nm的蓝光芯片等)。In this embodiment, when the LED chips arranged on the substrate are one of the four types of chips in the above examples, and the number of LED chips arranged on the substrate is at least two, the peak luminous value of the at least two LED chips The wavelengths can be the same (for example, they are all blue light chips with a light emission peak wavelength of 440nm, 445nm or 450nm, etc.), or they can be different (for example, some of them are blue light chips with a light emission peak wavelength of 440nm, 445nm or 450nm, and the other part is a blue light chip with a light emission peak wavelength of 455nm). , 465nm or 480nm Blu-ray chip, etc.).
在本实施例中，在基板上设置的LED芯片为上述示例的四种芯片中的两种以上时，具体可包括两种、三种或四种，且具体的组合方式包括但不限于上述示例的四种芯片的任意组合。例如包括两种时，可以是蓝光芯片与绿光芯片，也可以是蓝光芯片与红光芯片，或绿光芯片与黄光芯片；包括三种时，可以是蓝光芯片、绿光芯片和红光芯片，也可以是黄光芯片、蓝光芯片和红光芯片，或蓝光芯片、绿光芯片和黄光芯片等。且根据上述分析可知，每一种芯片发光峰值波长也可相同或不同。为了便于理解，本实施例下面结合几种具体示例进行说明。In this embodiment, when the LED chips arranged on the substrate are two or more of the four types of chips in the above examples, it may specifically include two, three or four types, and the specific combination methods include but are not limited to the above examples Any combination of the four chips. For example, when two types are included, it can be a blue chip and a green chip, or a blue chip and a red chip, or a green chip and a yellow chip; when three types are included, it can be a blue chip, a green chip and a red chip. The chip can also be a yellow light chip, a blue light chip and a red light chip, or a blue light chip, a green light chip and a yellow light chip, etc. And according to the above analysis, it can be seen that the peak wavelengths of light emitted by each chip can be the same or different. For ease of understanding, this embodiment will be described below in conjunction with several specific examples.
在一种示例中，灯珠区域内的LED芯片设置一种芯片且发光峰值波长相同，例如，采用发光峰值波长500nm的蓝光LED芯片，或发光峰值波长530nm的绿光LED芯片。In an example, the LED chips in the lamp bead area are provided with one type of chip and have the same luminous peak wavelength, for example, a blue LED chip with a luminous peak wavelength of 500nm, or a green LED chip with a luminous peak wavelength of 530nm.
在一种示例中，灯珠区域内的LED芯片设置一种芯片且发光峰值波长包括至少两种的LED芯片，例如，采用发光峰值波长为450nm和500nm的蓝光LED芯片，或发光峰值波长为550nm、560nm和570nm的黄光芯片。In one example, the LED chip in the lamp bead area is provided with one type of chip and at least two types of LED chips with peak luminous wavelengths, for example, blue LED chips with peak luminous wavelengths of 450nm and 500nm, or blue LED chips with peak luminous wavelengths of 550nm , 560nm and 570nm yellow light chips.
在另一种示例中，灯珠区域内的LED芯片设置两种芯片、且每一种芯片的发光峰值波长相同，例如，采用红光LED芯片和蓝光LED芯片，红光LED芯片的发光峰值波长都为650nm，蓝光LED芯片的发光峰值波长都为450nm。In another example, the LED chips in the lamp bead area are provided with two types of chips, and the luminous peak wavelength of each chip is the same, for example, if a red LED chip and a blue LED chip are used, the luminous peak wavelength of the red LED chip is Both are 650nm, and the luminous peak wavelength of the blue LED chip is 450nm.
在另一种示例中，灯珠区域内的LED芯片设置两种芯片、且至少一种芯片的发光峰值波长不同，例如，采用黄光LED芯片和绿光LED芯片，黄光LED芯片的发光峰值波长都为560nm，一部分绿光LED芯片的发光峰值波长为530nm，另一部分绿光LED芯片的发光峰值波长为540nm。In another example, the LED chips in the lamp bead area are provided with two types of chips, and at least one chip has a different luminous peak wavelength. For example, a yellow LED chip and a green LED chip are used, and the luminous peak wavelength of the yellow LED chip The wavelengths are all 560nm, the luminous peak wavelength of some green LED chips is 530nm, and the luminous peak wavelength of another part of green LED chips is 540nm.
在另一种示例中，灯珠区域内的LED芯片设置三种芯片、且每一种芯片的发光峰值波长相同，例如，采用蓝光LED芯片、绿光LED芯片和红光LED芯片，蓝光LED芯片的发光峰值波长都为480nm，绿光LED芯片的发光峰值波长都为535nm，红光LED芯片的发光峰值波长都为620nm。In another example, the LED chips in the lamp bead area are provided with three types of chips, and the luminous peak wavelengths of each chip are the same, for example, blue LED chips, green LED chips and red LED chips are used, and the blue LED chip The luminous peak wavelength of the green LED chip is 480nm, the luminous peak wavelength of the green LED chip is 535nm, and the luminous peak wavelength of the red LED chip is 620nm.
在另一种示例中，灯珠区域内的LED芯片设置三种芯片、且至少一种芯片的发光峰值波长不同，例如，采用蓝光LED芯片、绿光LED芯片和红光LED芯片，蓝光LED芯片的发光峰值波长都为480nm，一部分绿光LED芯片的发光峰值波长为535nm，另一部分绿光LED芯片的发光峰值波长为540nm，一部分红光LED芯片的发光峰值波长为620nm，另一部分红光LED芯片的发光峰值波长为650nm。In another example, the LED chips in the lamp bead area are provided with three types of chips, and at least one of the chips has different luminous peak wavelengths. For example, a blue LED chip, a green LED chip and a red LED chip are used, and the blue LED chip The luminous peak wavelength of some green LED chips is 480nm, the luminous peak wavelength of some green LED chips is 535nm, the luminous peak wavelength of another part of green LED chips is 540nm, the luminous peak wavelength of some red LED chips is 620nm, and the other part of red LED chips The emission peak wavelength of the chip is 650nm.
在另一种示例中，灯珠区域内的LED芯片设置四种芯片、且每一种芯片的发光峰值波长相同，例如，采用蓝光LED芯片、绿光LED芯片、黄光LED芯片和红光LED芯片，蓝光LED芯片的发光峰值波长都为480nm，绿光LED芯片的发光峰值波长都为536nm，黄光LED芯片的发光峰值波长都为570nm，红光LED芯片的发光峰值波长都为625nm。In another example, the LED chips in the lamp bead area are provided with four types of chips, and each chip has the same luminous peak wavelength. For example, blue LED chips, green LED chips, yellow LED chips and red LED chips are used. Chip, the peak luminescence wavelength of the blue LED chip is 480nm, the peak luminescence wavelength of the green LED chip is 536nm, the luminescence peak wavelength of the yellow LED chip is 570nm, and the luminescence peak wavelength of the red LED chip is 625nm.
应当理解的是，当基板上设置的LED芯片包括多种(大于三种)不同发光峰值波长的LED芯片时，可以是四种、五种、六种等不同发光峰值波长的LED芯片。例如，一种示例中设置基板上的至少一个灯珠区域内设置多颗LED芯片，且具体包括上述四个不同发光峰值波长范围的LED芯片，且具体的假设设置4颗LED芯片，分别为发光峰值波长为480nm的蓝光LED芯片、发光峰值波长为540nm的绿光LED芯片、发光峰值波长为680nm的红光LED芯片和发光峰值波长为560nm的黄光LED芯片。可选地，还可在黄光LED芯片上涂覆一层蓝色的荧光粉胶层、荧光膜或QD膜，则黄光LED芯片发出的黄光经过蓝色的荧光粉胶层、荧光膜或QD膜之后，便可发出白光。It should be understood that when the LED chips provided on the substrate include multiple (more than three) LED chips with different luminous peak wavelengths, there may be four, five, six or other LED chips with different luminous peak wavelengths. For example, in one example, multiple LED chips are set in at least one lamp bead area on the substrate, and specifically include the above four LED chips with different luminous peak wavelength ranges, and it is specifically assumed that 4 LED chips are set. A blue LED chip with a peak wavelength of 480nm, a green LED chip with a peak emission wavelength of 540nm, a red LED chip with a peak emission wavelength of 680nm, and a yellow LED chip with a peak emission wavelength of 560nm. Optionally, a blue phosphor adhesive layer, fluorescent film or QD film can also be coated on the yellow LED chip, then the yellow light emitted by the yellow LED chip passes through the blue phosphor adhesive layer, fluorescent film Or QD film, it can emit white light.
应当理解的是，在本实施例中，LED芯片自身发出的光的类型可以是肉眼可见的可见光，也可以是肉眼不可见的紫外光、红外光；当LED芯片自身发出的光的类型是肉眼不可见的紫外光、红外光时，需在LED芯片之上设置发光转换层，以将肉眼不可见光转换成肉眼可见光，使得LED照射出来的光是用户可见的光。例如，当LED芯片自身发出的光是紫外光时，若想LED呈现用户可见的白光，则发光转换层可以是将红、绿、蓝荧光粉进行混合后制作成的。It should be understood that, in this embodiment, the type of light emitted by the LED chip itself can be visible light visible to the naked eye, or ultraviolet light and infrared light invisible to the naked eye; when the type of light emitted by the LED chip itself is For invisible ultraviolet light and infrared light, it is necessary to set a luminescence conversion layer on the LED chip to convert the invisible light to naked eye visible light, so that the light irradiated by the LED is visible to the user. For example, when the light emitted by the LED chip itself is ultraviolet light, if you want the LED to display white light visible to the user, the luminescence conversion layer can be made by mixing red, green, and blue phosphors.
本实施例提供的LED，还可包括位于LED芯片之上的发光转换层、透明胶层或扩散胶层。当在LED芯片之上设置有发光转换层时，LED的光照射出来、呈现给用户的颜色，是LED芯片发出的光的颜色，与发光转换层所发出的荧光的颜色进行混合后呈现出来的。发光转换层至少有以下作用：是LED的光照射出来、呈现给用户的颜色的决定因素之一，同时还能起到对LED芯片的保护作用，例如防尘、防水、防油等。当在LED芯片之上设置有透明胶层时，透明胶层可起到对LED芯片的保护作用，例如防尘、防水、防油等。当在LED芯片之上设置有扩散胶层时，扩散胶层可以采用无机型光扩散剂和有机型光扩散剂来制作；在LED芯片之上设置扩散胶层时，可以增加光的散射和透射，遮住LED芯片发光源以及刺眼光源的同时，又能使整个树脂发出更加柔和，美观，高雅的光，达到透光不透明的舒适效果。为了便于理解，下面以几种LED芯片与发光转换层的结合示例进行说明。The LED provided in this embodiment may also include a luminescence conversion layer, a transparent adhesive layer or a diffusion adhesive layer on the LED chip. When a luminescence conversion layer is provided on the LED chip, the color of the light emitted by the LED and presented to the user is the color of the light emitted by the LED chip, which is presented after mixing with the color of the fluorescence emitted by the luminescence conversion layer. . The luminescence conversion layer has at least the following functions: it is one of the decisive factors for the color of the LED light irradiated and presented to the user, and at the same time it can also protect the LED chip, such as dustproof, waterproof, oilproof, etc. When a transparent adhesive layer is provided on the LED chip, the transparent adhesive layer can protect the LED chip, such as dustproof, waterproof, oilproof and the like. When a diffusing adhesive layer is set on the LED chip, the diffusing adhesive layer can be made of inorganic type light diffusing agent and organic type light diffusing agent; when the diffusing adhesive layer is set on the LED chip, the scattering of light can be increased And transmission, while covering the LED chip light source and dazzling light source, it can also make the whole resin emit softer, more beautiful and elegant light, achieving a comfortable effect of light transmission and opacity. For ease of understanding, several examples of combinations of LED chips and luminescence conversion layers are described below.
如上分析可知，本实施例中灯珠区域内的LED芯片可以是上述示例的四种芯片中的任意一种或至少两种的组合，因此本实施例中以采用上述四种芯片中的任意一种或至少两种的组合，与发光转换层结合产生预设混色光为示例进行说明。且应当理解的是，本实施例中的预设混色光可以根据具体需求灵活设定，例如可以为白光，也可以品红光、青光、蓝白光等等。下面以白光为示例进行说明。As can be seen from the above analysis, the LED chips in the lamp bead area in this embodiment can be any one or a combination of at least two of the four types of chips in the above examples, so any one of the above four types of chips can be used in this embodiment One or at least two combinations, combined with the luminescence conversion layer to generate preset mixed color light, will be described as an example. And it should be understood that the preset mixed color light in this embodiment can be flexibly set according to specific requirements, for example, it can be white light, magenta light, cyan light, blue-white light and so on. In the following, white light is taken as an example for illustration.
例如，灯珠区域内的LED芯片为上述示例的四种芯片中的任意一种时，如果为蓝光芯片(例如发光峰值波长为450nm)，此时的发光转换层可以采用黄色荧光粉胶层、黄色荧光膜或黄色量子点QD膜；如果为绿光芯片，此时的发光转换层可以采用蓝色荧光粉和红色荧光粉混合后制成的荧光粉胶层、荧光膜或蓝色量子点和红色量子点混合后制成的QD膜；如果为黄光芯片，此时的发光转换层可以采用蓝色荧光粉制成的荧光粉胶层、荧光膜或蓝色量子点制成的QD膜，如果为红光芯片，此时的发光转换层可以采用蓝色荧光粉和绿色荧光粉混合后制成的荧光粉胶层、荧光膜或蓝色量子点和绿色量子点混合后制成的QD膜。For example, when the LED chip in the lamp bead area is any one of the four chips in the above examples, if it is a blue light chip (for example, the peak wavelength of light emission is 450nm), the light emission conversion layer at this time can use a yellow phosphor glue layer, Yellow fluorescent film or yellow quantum dot QD film; if it is a green light chip, the luminescence conversion layer at this time can be made of a phosphor adhesive layer, fluorescent film or blue quantum dots and A QD film made by mixing red quantum dots; if it is a yellow light chip, the luminescence conversion layer at this time can use a phosphor powder adhesive layer made of blue phosphor powder, a fluorescent film or a QD film made of blue quantum dots, If it is a red light chip, the luminescence conversion layer at this time can be a phosphor powder adhesive layer made by mixing blue phosphor and green phosphor, a fluorescent film or a QD film made by mixing blue quantum dots and green quantum dots .
又例如，灯珠区域内的LED芯片为上述示例的四种芯片中的任意两种的组合时，如果为蓝光芯片与绿光芯片的组合，此时的发光转换层可以采用红色荧光粉制成的荧光粉胶层、荧光膜或红色量子点制成的QD膜；如果为蓝光芯片与红光芯片的组合，此时的发光转换层可以采用绿色荧光粉制成的荧光粉胶层、荧光膜或绿色量子点制成的QD膜；如果为蓝光芯片与黄光芯片的组合，此时的发光转换层可以采用蓝色荧光粉、绿色荧光粉和红色荧光粉混合后制成的荧光粉胶层、荧光膜或蓝色量子点、绿色量子点和红色量子点混合后制成的QD膜，以此类推。For another example, when the LED chip in the lamp bead area is a combination of any two of the four chips in the above examples, if it is a combination of a blue chip and a green chip, the luminescence conversion layer at this time can be made of red phosphor Phosphor adhesive layer, fluorescent film or QD film made of red quantum dots; if it is a combination of blue chip and red chip, the luminescence conversion layer at this time can use phosphor adhesive layer and fluorescent film made of green phosphor Or a QD film made of green quantum dots; if it is a combination of a blue chip and a yellow chip, the luminescence conversion layer at this time can be a phosphor glue layer made by mixing blue phosphor, green phosphor and red phosphor , fluorescent film or QD film made by mixing blue quantum dots, green quantum dots and red quantum dots, and so on.
又例如，灯珠区域内的LED芯片为上述示例的四种芯片中的任意三种的组合时，如果为蓝光芯片、绿光芯片和红光芯片的组合，此时的发光转换层可以采用蓝色荧光粉、绿色荧光粉和红色荧光粉混合后制成的荧光粉胶层、荧光膜或蓝色量子点、绿色量子点和红色量子点混合后制成的QD膜；如果为红光芯片、绿光芯片和黄光芯片的组合，此时的发光转换层可以采用蓝色荧光粉制成的荧光粉胶层、荧光膜或蓝色量子点制成的QD膜。当然，在一些示例中，也可直接通过芯片自身颜色混合得到混色光，例如可直接通过蓝光芯片、绿光芯片和红光芯片组合而不采用发光转换层得到白光。具体设置可根据应用场景灵活确定。For another example, when the LED chip in the lamp bead area is a combination of any three of the four chips in the above examples, if it is a combination of blue chips, green chips and red chips, the luminescence conversion layer at this time can use blue chips. Phosphor glue layer, fluorescent film or blue quantum dots, green quantum dots and red quantum dots mixed to form a QD film; if it is a red light chip, For the combination of the green light chip and the yellow light chip, the luminescence conversion layer at this time can be a phosphor powder glue layer made of blue phosphor powder, a fluorescent film or a QD film made of blue quantum dots. Of course, in some examples, color-mixed light can also be obtained directly through color mixing of the chip itself, for example, white light can be obtained directly through the combination of a blue chip, a green chip and a red chip without using a luminescence conversion layer. Specific settings can be flexibly determined according to application scenarios.
又例如，灯珠区域内的LED芯片为上述示例的四种芯片的组合时，此时的发光转换层可以采用蓝色荧光粉制成的荧光粉胶层、荧光膜或蓝色量子点制成的QD膜；当然，也可以直接为蓝光芯片、绿光芯片和红光芯片自身发出的光混合后得到的白光与灯珠区域内额外设置的白光单元发出的白光再混合得到白光，该白光单元可通至少一颗LED芯片与发光转换层结合得到，具体可以采用但不限于上述任意一种方式得到的。For another example, when the LED chip in the lamp bead area is a combination of the four types of chips in the above examples, the luminescence conversion layer at this time can be made of a phosphor adhesive layer made of blue phosphor, a phosphor film, or blue quantum dots. QD film; of course, it is also possible to directly mix the white light obtained by mixing the light emitted by the blue chip, the green chip and the red chip itself with the white light emitted by the additional white light unit in the lamp bead area to obtain white light. The white light unit It can be obtained by combining at least one LED chip with a luminescence conversion layer, specifically, it can be obtained by using but not limited to any of the above methods.
在本实施例中，荧光粉胶层、荧光膜可采用无机荧光粉制作的，可以是掺杂了稀土元素的无机荧光粉，其中，无机荧光粉为硅酸盐、铝酸盐、磷酸盐、氮化物、氟化物荧光粉中的至少一种。荧光粉胶层可以是将荧光粉和胶水均匀混合之后进行固化形成的，胶水可以是采用光致固化胶体、感光胶等。荧光膜的制作可以是先将荧光粉和胶水均匀混合之后形成荧光粉胶体，然后采用印刷工艺将荧光粉胶体均匀印刷在支撑模具上，最后经过加热干燥或室温晾干后从支撑模具上取下形成。应当理解的是，上述只是例举了荧光粉胶层、荧光膜的一种制作方式，本实施例的荧光粉胶层、荧光膜的制作并不仅限于上述的方式。In this embodiment, the fluorescent powder adhesive layer and the fluorescent film can be made of inorganic fluorescent powder, which can be inorganic fluorescent powder doped with rare earth elements, wherein the inorganic fluorescent powder is silicate, aluminate, phosphate, At least one of nitride and fluoride phosphors. The phosphor powder adhesive layer may be formed by uniformly mixing phosphor powder and glue and then curing, and the glue may be photocurable colloid, photosensitive glue, or the like. The production of fluorescent film can be made by uniformly mixing phosphor powder and glue to form phosphor colloid, and then using printing process to evenly print phosphor colloid on the support mold, and finally take it off from the support mold after heating or drying at room temperature form. It should be understood that the above is only an example of a method of manufacturing the phosphor adhesive layer and the fluorescent film, and the manufacturing of the phosphor adhesive layer and the fluorescent film in this embodiment is not limited to the above methods.
量子点QD膜可采用量子点荧光粉制作的；量子点荧光粉为BaS、AgInS2、NaCl、Fe2O3、In2O3、InAs、InN、InP、CdS、CdSe、CdTe、ZnS、ZnSe、ZnTe、GaAs、GaN、GaS、GaSe、InGaAs、MgSe、MgS、MgTe、PbS、PbSe、PbTe、Cd(SxSe1-x)、BaTiO3、PbZrO3、CsPbCl3、CsPbBr3、CsPbI3中的至少一种。量子点QD膜可以是将量子点荧光粉和胶水均匀混合之后进行固化形成的，胶水可以是采用光致固化胶体、感光胶等。应当理解的是，上述只是例举了量子点QD膜的一种制作方式，本实施例的量子点QD膜的制作并不仅限于上述的方式。Quantum dot QD film can be made of quantum dot phosphor; At least one of GaS, GaSe, InGaAs, MgSe, MgS, MgTe, PbS, PbSe, PbTe, Cd(SxSe1-x), BaTiO3, PbZrO3, CsPbCl3, CsPbBr3, CsPbI3. The quantum dot QD film can be formed by uniformly mixing quantum dot phosphor powder and glue and then curing. The glue can be photocurable colloid, photosensitive glue, etc. It should be understood that the above is only an example of a fabrication method of the quantum dot QD film, and the fabrication of the quantum dot QD film in this embodiment is not limited to the above method.
本实施例提供的发光转换层、透明胶层或扩散胶层可以通过点胶、模压或喷涂的方式设置于LED芯片之上。例如，当LED的发光转换层采用荧光粉胶层、或荧光膜时，均可以通过点胶工艺向LED芯片发光面涂覆掺入荧光粉的封装胶水形成；也可以预先将荧光粉和胶水进行混合后，再通过模压工艺将其覆盖在LED芯片发光面上，不需要混合在封装胶水中通过点胶涂覆在LED芯片的封装面上，因此可以通过足够的时间和工艺保证荧光粉均匀分散在荧光粉胶层、或荧光膜中，从而提升LED芯片的产品优良率。The luminescence conversion layer, transparent adhesive layer or diffusion adhesive layer provided in this embodiment can be disposed on the LED chip by dispensing, molding or spraying. For example, when the luminescence conversion layer of the LED adopts a fluorescent powder glue layer or a fluorescent film, it can be formed by applying a packaging glue mixed with phosphor powder to the light-emitting surface of the LED chip through a dispensing process; After mixing, cover it on the light-emitting surface of the LED chip through the molding process. It does not need to be mixed in the packaging glue and coated on the packaging surface of the LED chip by dispensing, so sufficient time and technology can be used to ensure that the phosphor is evenly dispersed. In the fluorescent powder adhesive layer or fluorescent film, thereby improving the product yield of LED chips.
例如，当LED的发光转换层采用量子点QD膜时，可以通过点胶工艺向LED芯片发光面涂覆掺入量子点荧光粉的封装胶水形成；也可以预先将量子点荧光粉和胶水进行均匀混合后，再通过模压工艺将其覆盖在LED芯片发光面上，不需要混合在封装胶水中通过点胶涂覆在LED芯片的封装面上，因此可以通过足够的时间和工艺保证量子点荧光粉均匀分散在量子点QD膜中，从而提升LED芯片的产品优良率。For example, when the luminescence conversion layer of LED adopts quantum dot QD film, it can be formed by coating the packaging glue mixed with quantum dot phosphor powder on the light emitting surface of LED chip through dispensing process; After mixing, it is covered on the light-emitting surface of the LED chip through the molding process. It does not need to be mixed in the packaging glue and coated on the packaging surface of the LED chip by dispensing, so sufficient time and technology can be used to ensure that the quantum dot phosphor Evenly dispersed in the quantum dot QD film, thereby improving the product yield of LED chips.
实施例二：Embodiment two:
为了便于理解，本实施例以基板为平面基板为例进行说明。For ease of understanding, the present embodiment takes a planar substrate as an example for description.
本实施例中，LED芯片可采用正装LED芯片，此时的基板正面可具有至少一个裸露于电路层之外，用于放置LED芯片的固晶区，或，电路层上具有至少一个用于放置LED芯片的芯片放置区，或，在电路层与基板之间具有绝缘层时，在绝缘层上具有至少一个用于放置LED芯片的芯片放置区；In this embodiment, the LED chip can be a front-mounted LED chip. At this time, the front side of the substrate can have at least one die-bonding area exposed outside the circuit layer for placing the LED chip, or there is at least one on the circuit layer for placing the LED chip. A chip placement area for LED chips, or, when there is an insulating layer between the circuit layer and the substrate, there is at least one chip placement area for placing LED chips on the insulating layer;
本实施例中的LED芯片也可以为倒装LED芯片，此时电路层上具有至少一个用于放置LED芯片的芯片放置区，LED芯片的正极引脚和负极引脚分别对应的正极引脚焊接区和负极引脚焊接区位于芯片放置区内；The LED chip in this embodiment can also be a flip-chip LED chip. At this time, there is at least one chip placement area for placing the LED chip on the circuit layer, and the positive pin and the negative pin of the LED chip correspond to the positive pin respectively. The area and the negative pin welding area are located in the chip placement area;
灯珠区域包括至少一个固晶区或芯片放置区。The lamp bead area includes at least one die-bonding area or chip placement area.
本实施例提供的LED可以只有一颗LED芯片，也可以是多颗LED芯片，具体数量可以根据实际情况进行灵活设置。一颗LED芯片可以是有一个固晶区或芯片放置区与之对应。一个灯珠区域内的固晶区或芯片放置区的数量可以根据实际情况进行灵活设置。灯珠区域的数量也可以根据实际情况进行灵活设置。The LED provided in this embodiment may have only one LED chip, or may have multiple LED chips, and the specific number may be flexibly set according to actual conditions. An LED chip may have a die-bonding area or a chip placement area corresponding to it. The number of die-bonding areas or chip placement areas in a lamp bead area can be flexibly set according to actual conditions. The number of lamp bead areas can also be flexibly set according to the actual situation.
本实施例中，当LED芯片采用正装LED芯片，此时的基板正面可具有至少一个裸露于电路层之外，用于放置LED芯片的固晶区，灯珠区域包括至少一个固晶区。例如，LED芯片有多颗、且多颗LED芯片均位于同一个灯珠区域或者多颗LED芯片位于多个灯珠区域内，每一颗LED芯片对应一个固晶区。In this embodiment, when the LED chip is a front-mounted LED chip, the front surface of the substrate may have at least one die-bonding area exposed outside the circuit layer for placing the LED chip, and the lamp bead area includes at least one die-bonding area. For example, if there are multiple LED chips, and the multiple LED chips are all located in the same lamp bead area or the multiple LED chips are located in multiple lamp bead areas, each LED chip corresponds to a die-bonding area.
本实施例中，当LED芯片采用正装LED芯片，此时的电路层上可具有至少一个用于放置LED芯片的芯片放置区，灯珠区域包括至少一个芯片放置区。例如，LED芯片有多颗、且多颗LED芯片均位于同一个灯珠区域或者多颗LED芯片位于多个灯珠区域内，每一颗LED芯片对应一个芯片放置区。In this embodiment, when the LED chip is a front-mounted LED chip, there may be at least one chip placement area for placing the LED chip on the circuit layer at this time, and the lamp bead area includes at least one chip placement area. For example, there are multiple LED chips, and the multiple LED chips are all located in the same lamp bead area, or the multiple LED chips are located in multiple lamp bead areas, and each LED chip corresponds to a chip placement area.
本实施例中，当LED芯片采用正装LED芯片，在电路层与基板之间具有绝缘层时，在绝缘层上具有至少一个用于放置LED芯片的芯片放置区，灯珠区域包括至少一个芯片放置区。例如，LED芯片有多颗、且多颗LED芯片均位于同一个灯珠区域或者多颗LED芯片位于多个灯珠区域内，每一颗LED芯片对应一个芯片放置区。In this embodiment, when the LED chip adopts a front-mounted LED chip, and there is an insulating layer between the circuit layer and the substrate, there is at least one chip placement area for placing the LED chip on the insulating layer, and the lamp bead area includes at least one chip placement area. Area. For example, there are multiple LED chips, and the multiple LED chips are all located in the same lamp bead area, or the multiple LED chips are located in multiple lamp bead areas, and each LED chip corresponds to a chip placement area.
本实施例中，当LED芯片为倒装LED芯片，此时电路层上具有至少一个用于放置LED芯片的芯片放置区，LED芯片的正极引脚和负极引脚分别对应的正极引脚焊接区和负极引脚焊接区位于芯片放置区内；灯珠区域包括至少一个芯片放置区。例如，LED芯片有多颗、且多颗LED芯片均位于同一个灯珠区域或者多颗LED芯片位于多个灯珠区域内，每一颗LED芯片对应一个芯片放置区。In this embodiment, when the LED chip is a flip-chip LED chip, there is at least one chip placement area for placing the LED chip on the circuit layer at this time, and the positive pin and the negative pin of the LED chip correspond to the positive pin welding area respectively. and the negative pin welding area are located in the chip placement area; the lamp bead area includes at least one chip placement area. For example, there are multiple LED chips, and the multiple LED chips are all located in the same lamp bead area, or the multiple LED chips are located in multiple lamp bead areas, and each LED chip corresponds to a chip placement area.
以下提供具体的例子进行说明，例如，参见图13-1，图13-1为本实施例提供的一种具有导电平基板、且LED芯片为正装LED芯片的结构示意图，图13-1中，基板131的正面为平面，基板131为铜基板，多颗LED芯片132均为正装芯片，通过金属线134进行电连接；在铜基板正面之上设置有电路层133，电路层133与铜基板之间通过绝缘层135进行绝缘隔离，电路层133与绝缘层135位置重合。LED芯片132设置在相邻两个电路层133之间，且直接设置在铜基板的固晶区136上。电路层133包括分别与LED芯片132正极引脚1321和负极引脚1322连接的正极引脚焊接区1331和负极引脚焊接区1332，电路层133还包括用于将基板131上的灯珠区域内的LED芯片132与其他灯珠和/或基板131上其他器件的连接点连接的电路；各LED芯片132的正极引脚1321和负极引脚1322分别与电路层133上对应的正极引脚焊接区1331和负极引脚焊接区1332连接，同一个LED芯片132放置在相邻的两个电路层133之间，例如对于某一个LED芯片132，其正极引脚1321与其中一个电路层133的正极引脚焊接区1331连接，其负极引脚1322与另一电路层133的负极引脚焊接区1332连接，这两个电路层133相邻。Specific examples are provided below for illustration. For example, refer to FIG. 13-1. FIG. 13-1 is a structural schematic diagram of a conductive flat substrate provided in this embodiment, and the LED chip is a front-mounted LED chip. In FIG. 13-1, The front of the substrate 131 is a plane, and the substrate 131 is a copper substrate, and a plurality of LED chips 132 are all positive-mounted chips, and are electrically connected by metal wires 134; a circuit layer 133 is arranged on the front of the copper substrate, and the circuit layer 133 and the copper substrate The insulating layer 135 is used to insulate and isolate the circuit layer 133 and the insulating layer 135 . The LED chip 132 is disposed between two adjacent circuit layers 133 and directly disposed on the die-bonding region 136 of the copper substrate. The circuit layer 133 includes a positive pin welding area 1331 and a negative pin welding area 1332 respectively connected to the positive pin 1321 and the negative pin 1322 of the LED chip 132. The LED chip 132 is connected to the connection point of other lamp beads and/or other devices on the substrate 131; the positive pin 1321 and the negative pin 1322 of each LED chip 132 are respectively connected to the corresponding positive pin welding area on the circuit layer 133 1331 is connected to the negative pin welding area 1332, and the same LED chip 132 is placed between two adjacent circuit layers 133, for example, for a certain LED chip 132, its positive pin 1321 is connected to the positive pin of one of the circuit layers 133 The pin welding area 1331 is connected, and its negative pin 1322 is connected to the negative pin welding area 1332 of another circuit layer 133 , and these two circuit layers 133 are adjacent.
参见图13-2，图13-2为本实施例提供的一种具有导电平基板、将纵向的四个固晶区划分为一个灯珠区域、且LED芯片正装在基板上的LED结构的俯视图；图13-2提供的基板131包括4个灯珠区域137，每个灯珠区域137有4个固晶区，每个LED芯片132对应一个固晶区；电路层133包括与各灯珠区域137内待放置的LED芯片132的正极引脚1321和负极引脚1322分别对应的正极引脚焊接区1331和负极引脚焊接区1332，以及将至少两个灯珠区域137进行电连接的电路138。Refer to Fig. 13-2, Fig. 13-2 is a top view of an LED structure provided by this embodiment with a conductive flat substrate, dividing four longitudinal die-bonding areas into a lamp bead area, and LED chips are mounted on the substrate ; The substrate 131 provided in Fig. 13-2 includes 4 lamp bead regions 137, each lamp bead region 137 has 4 crystal-bonding regions, and each LED chip 132 corresponds to a crystal-bonding region; the circuit layer 133 includes The positive pin 1321 and the negative pin 1322 of the LED chip 132 to be placed in 137 correspond to the positive pin welding area 1331 and the negative pin welding area 1332 respectively, and a circuit 138 for electrically connecting at least two lamp bead areas 137 .
应当理解的是，灯珠区域的划分可以根据实际场景进行灵活划分，例如除了图13-2提供的纵向划分的方式，还可以是横向划分的方式，还可以是将一个固晶区划分为一个灯珠区域的方式，参见图13-3，图13-3为本实施例提供的一种具有导电平基板、将一个固晶区划分为一个灯珠区域、且LED芯片正装在基板上的LED结构的俯视图，图13-3与图13-2的区别在于仅灯珠区域划分的方式不同，图13-2的灯珠区域划分的方式为将纵向的四个固晶区划分为一个灯珠区域，图13-3的灯珠区域划分的方式为将一个固晶区划分为一个灯珠区域。It should be understood that the division of the lamp bead area can be flexibly divided according to the actual scene. For example, in addition to the vertical division method provided in Figure 13-2, the horizontal division method can also be used, or one die-bonding area can be divided into one For the way of the lamp bead area, refer to Figure 13-3. Figure 13-3 is an LED with a conductive flat substrate provided in this embodiment, which divides a solid crystal area into a lamp bead area, and the LED chip is mounted on the substrate. The top view of the structure, the difference between Figure 13-3 and Figure 13-2 is that only the way of dividing the lamp bead area is different. The way of dividing the lamp bead area in Figure 13-2 is to divide the four longitudinal crystal-bonding areas into one lamp bead Regions, the way to divide the lamp bead area in Figure 13-3 is to divide one die-bonding area into one lamp bead area.
基于上述给出的条件，以下给出四个不同的示例：Based on the conditions given above, four different examples are given below:
示例一，LED包括多颗LED芯片132，多颗LED芯片132均为发光峰值波长为450nm的蓝光芯片，采用点胶工艺向多颗LED芯片132发光面涂覆掺入一定量的红色无机荧光粉和绿色无机荧光粉的封装胶水形成荧光胶层，参见图13-4，图13-4为本实施例提供的一种具有导电平基板、具有荧光胶层、且LED芯片为正装LED芯片的结构示意图，图13-4是在图13-1的基础上增加了荧光胶层139；LED通电后，LED芯片132发出蓝光，与荧光胶层139的红荧光、绿荧光混合后，从LED中发出白光呈现给用户。Example 1, the LED includes a plurality of LED chips 132, and the plurality of LED chips 132 are all blue light chips with a luminous peak wavelength of 450nm, and a certain amount of red inorganic phosphor is coated and mixed with a certain amount of red inorganic phosphor powder on the light emitting surface of the plurality of LED chips 132 by a dispensing process. Form a fluorescent glue layer with the packaging glue of green inorganic phosphor powder, see Figure 13-4, Figure 13-4 is a structure provided by this embodiment with a conductive flat substrate, a fluorescent glue layer, and the LED chip is a formal LED chip Schematic diagram, Fig. 13-4 adds fluorescent adhesive layer 139 on the basis of Fig. 13-1; after LED is powered on, LED chip 132 emits blue light, which mixes with red fluorescent light and green fluorescent light of fluorescent adhesive layer 139 and emits from LED White light is presented to the user.
示例二，LED包括多颗LED芯片132，多颗LED芯片132包括发光峰值波长为450nm的蓝光芯片和发光峰值波长为540nm的绿光芯片，先将红色无机荧光粉和胶水均匀混合之后形成荧光粉胶体，再通过模压工艺将荧光粉胶体覆盖在LED芯片发光面上，形成荧光膜；LED通电后，蓝光芯片发出蓝光，绿光芯片发出绿光，与荧光膜的红荧光混合后，从LED中发出白光呈现给用户。Example 2, the LED includes a plurality of LED chips 132, and the plurality of LED chips 132 include a blue chip with a luminous peak wavelength of 450nm and a green chip with a luminous peak wavelength of 540nm, and the red inorganic phosphor powder is uniformly mixed with glue to form a phosphor powder colloid, and then cover the phosphor colloid on the light-emitting surface of the LED chip through the molding process to form a fluorescent film; after the LED is powered on, the blue chip emits blue light, and the green chip emits green light. After mixing with the red fluorescence of the fluorescent film, the LED Emit white light to present to the user.
示例三，LED包括多颗LED芯片132，多颗LED芯片132包括发光峰值波长为450nm的蓝光LED芯片、发光峰值波长为540nm的绿光LED芯片、和发光峰值波长为700nm的红光LED芯片，先将一定量的红量子点荧光粉、蓝量子点荧光粉和绿量子点荧光粉均匀混合之后，再和胶水均匀混合形成量子点QD膜，再通过模压工艺将量子点QD膜覆盖在LED芯片132发光面上；LED通电后，蓝光芯片发出蓝光，绿光芯片发出绿光，红光芯片发出红光，然后再与量子点QD膜的红光、蓝光、绿光混合后，从LED中发出白光呈现给用户。Example 3, the LED includes a plurality of LED chips 132, and the plurality of LED chips 132 include a blue LED chip with a peak emission wavelength of 450nm, a green LED chip with a peak emission wavelength of 540nm, and a red LED chip with a peak emission wavelength of 700nm, First mix a certain amount of red quantum dot phosphor, blue quantum dot phosphor and green quantum dot phosphor evenly, and then mix it with glue to form a quantum dot QD film, and then cover the quantum dot QD film on the LED chip by molding process 132 light-emitting surface; after the LED is powered on, the blue light chip emits blue light, the green light chip emits green light, and the red light chip emits red light, and then mixes with the red light, blue light, and green light of the quantum dot QD film, and emits from the LED White light is presented to the user.
示例四，LED包括多颗LED芯片132，多颗LED芯片132包括发光峰值波长为450nm的蓝光LED芯片、发光峰值波长为540nm的绿光LED芯片、和发光峰值波长为700nm的红光LED芯片，采用透明胶层覆盖在LED芯片132的发光面上；LED通电后，蓝光芯片发出蓝光，绿光芯片发出绿光，红光芯片发出红光，蓝光、绿光、红光混合后，从LED中发出白光呈现给用户。Example 4, the LED includes a plurality of LED chips 132, and the plurality of LED chips 132 include a blue LED chip with a peak emission wavelength of 450nm, a green LED chip with a peak emission wavelength of 540nm, and a red LED chip with a peak emission wavelength of 700nm, A transparent adhesive layer is used to cover the light-emitting surface of the LED chip 132; after the LED is powered on, the blue light chip emits blue light, the green light chip emits green light, and the red light chip emits red light. Emit white light to present to the user.
以下针对灯珠区域内设置的LED芯片包括三种不同发光峰值波长范围的芯片，LED芯片包括发光峰值波长为440nm的蓝光LED芯片、发光峰值波长为520nm的绿光LED芯片、和发光峰值波长为700nm的红光LED芯片的情况进行举例说明，例如，参见图13-5，图13-5为本实施例提供的一种LED芯片包括红光LED芯片、蓝光LED芯片和绿光LED芯片的示意图，图13-5中，包括4个灯珠区域137，每个灯珠区域137包括3个LED芯片132，这3个LED芯片132分别为红光LED芯片132(图中用字母R表示)、绿光LED芯片132(图中用字母G表示)、蓝光LED芯片132(图中用字母B表示)，这也是图13-5与图13-2的区别之处。The following LED chips set in the lamp bead area include chips with three different luminous peak wavelength ranges. The LED chips include blue LED chips with a luminous peak wavelength of 440nm, green LED chips with a luminous peak wavelength of 520nm, and luminous peak wavelengths of The case of a 700nm red LED chip is illustrated, for example, see Figure 13-5, which is a schematic diagram of an LED chip provided in this embodiment including a red LED chip, a blue LED chip and a green LED chip , in Fig. 13-5, include 4 lamp bead areas 137, each lamp bead area 137 includes 3 LED chips 132, these 3 LED chips 132 are red light LED chips 132 (indicated by letter R in the figure), The green LED chip 132 (indicated by the letter G in the figure) and the blue LED chip 132 (indicated by the letter B in the figure) are also the differences between Fig. 13-5 and Fig. 13-2.
以下针对灯珠区域内设置的LED芯片包括三种不同发光峰值波长范围的芯片，LED芯片包括发光峰值波长为440nm的蓝光LED芯片、发光峰值波长为520nm的绿光LED芯片、和发光峰值波长为700nm的红光LED芯片的另一种情况进行举例说明，参见图13-6，图13-6为本实施例提供的一种LED芯片包括红光LED芯片、蓝光LED芯片、绿光LED芯片和发出白光的LED芯片单元的示意图，图13-6中，包括4个灯珠区域137，每个灯珠区域137包括4个LED芯片132，这4个LED芯片132包括红光LED芯片132(图中用字母R表示)、绿光LED芯片132(图中用字母G表示)、两个蓝光LED芯片132(图中用字母B表示)，其中发出白光的LED芯片单元是在一个蓝光LED芯片132上涂覆一层红色荧光粉和绿色荧光粉混合后的荧光胶层形成，这也是图13-6与图13-5的区别之处。The following LED chips set in the lamp bead area include chips with three different luminous peak wavelength ranges. The LED chips include blue LED chips with a luminous peak wavelength of 440nm, green LED chips with a luminous peak wavelength of 520nm, and luminous peak wavelengths of Another example of a 700nm red LED chip is illustrated. Refer to Figure 13-6. Figure 13-6 shows that an LED chip provided by this embodiment includes a red LED chip, a blue LED chip, a green LED chip and The schematic diagram of the LED chip unit that emits white light, in FIG. Indicated by the letter R), a green LED chip 132 (indicated by the letter G in the figure), two blue LED chips 132 (indicated by the letter B in the figure), wherein the LED chip unit that emits white light is in a blue LED chip 132 A layer of fluorescent glue mixed with red phosphor powder and green phosphor powder is applied on the upper surface, which is also the difference between Figure 13-6 and Figure 13-5.
参见图14，图14为本实施例提供的一种具有绝缘平基板、且LED芯片正装在电路层上的LED结构示意图，图14中，LED基板141的正面为平面，基板141为绝缘基板，多颗LED芯片142均为正装芯片，通过金属线144进行电连接；在绝缘基板141正面之上设置有电路层143，由于基板141本身已经是绝缘的，所以电路层143是直接设置在绝缘基板141上的，无需再在基板141与电路层143之间另外设置绝缘层；Referring to Fig. 14, Fig. 14 is a schematic diagram of the structure of an LED provided in this embodiment with an insulating flat substrate and the LED chip is mounted on the circuit layer. In Fig. 14, the front of the LED substrate 141 is a plane, and the substrate 141 is an insulating substrate. A plurality of LED chips 142 are all positive-mounted chips, and are electrically connected by metal wires 144; a circuit layer 143 is arranged on the front of the insulating substrate 141, and since the substrate 141 itself is already insulated, the circuit layer 143 is directly arranged on the insulating substrate. 141, there is no need to additionally set an insulating layer between the substrate 141 and the circuit layer 143;
电路层143包括分别与LED芯片142正极引脚1421和负极引脚1422连接的正极引脚焊接区1431和负极引脚焊接区1432，电路层143还包括用于将基板141上的灯珠区域内的LED芯片142与其他灯珠和/或基板141上其他器件的连接点连接的电路；各LED芯片142的正极引脚1421和负极引脚1422分别与电路层143上对应的正极引脚焊接区1431和负极引脚焊接区1432连接；同一个LED芯片142放置在相邻的两个电路层143上，例如对于某一个LED芯片142，其正极引脚1421与其中一个电路层143的正极引脚焊接区1431连接，其负极引脚1422与另一电路层143的负极引脚焊接区1432连接，这两个电路层143相邻，相邻两个电路层143之间是绝缘隔离的。The circuit layer 143 includes a positive pin welding area 1431 and a negative pin welding area 1432 respectively connected to the positive pin 1421 and the negative pin 1422 of the LED chip 142. The LED chip 142 is connected to the connection point of other lamp beads and/or other devices on the substrate 141; the positive pin 1421 and the negative pin 1422 of each LED chip 142 are respectively connected to the corresponding positive pin soldering area on the circuit layer 143 1431 is connected to the negative pin welding area 1432; the same LED chip 142 is placed on two adjacent circuit layers 143, for example, for a certain LED chip 142, its positive pin 1421 is connected to the positive pin of one of the circuit layers 143 The welding area 1431 is connected, and its negative pin 1422 is connected to the negative pin welding area 1432 of another circuit layer 143 , these two circuit layers 143 are adjacent, and the two adjacent circuit layers 143 are insulated.
基于上述给出的条件，以下给出四个不同的示例：Based on the conditions given above, four different examples are given below:
示例一，LED包括多颗LED芯片142，多颗LED芯片142均为发光峰值波长为450nm的蓝光LED芯片，采用点胶工艺向多颗LED芯片142发光面涂覆掺入一定量的红色无机荧光粉和绿色无机荧光粉的封装胶水形成荧光胶层；LED通电后，LED芯片142发出蓝光，与荧光胶层的红荧光、绿荧光混合后，从LED中发出白光呈现给用户。Example 1, the LED includes a plurality of LED chips 142, and the plurality of LED chips 142 are blue LED chips with a luminous peak wavelength of 450nm, and a certain amount of red inorganic fluorescent light is coated on the light-emitting surface of the plurality of LED chips 142 by a dispensing process. The packaging glue of powder and green inorganic phosphor powder forms a fluorescent adhesive layer; after the LED is powered on, the LED chip 142 emits blue light, which is mixed with the red fluorescent light and green fluorescent light of the fluorescent adhesive layer, and white light is emitted from the LED to present to the user.
示例二，LED包括多颗LED芯片142，多颗LED芯片142包括发光峰值波长为450nm的蓝光LED芯片、和发光峰值波长为540nm的绿光LED芯片，先将红色无机荧光粉和胶水均匀混合之后形成荧光粉胶体，再通过模压工艺将荧光粉胶体覆盖在LED芯片发光面上，形成荧光膜；LED通电后，蓝光芯片发出蓝光，绿光芯片发出绿光，与荧光膜的红荧光混合后，从LED中发出白光呈现给用户。Example 2, the LED includes a plurality of LED chips 142, and the plurality of LED chips 142 include a blue LED chip with a luminous peak wavelength of 450nm and a green LED chip with a luminous peak wavelength of 540nm, first mix the red inorganic phosphor powder and glue evenly Phosphor colloid is formed, and then the phosphor colloid is covered on the light-emitting surface of the LED chip through a molding process to form a fluorescent film; after the LED is powered on, the blue light chip emits blue light, and the green light chip emits green light. After mixing with the red fluorescence of the fluorescent film, White light from the LED is presented to the user.
示例三，LED包括多颗LED芯片142，多颗LED芯片142包括发光峰值波长为450nm的蓝光LED芯片、发光峰值波长为540nm的绿光LED芯片、和发光峰值波长为700nm的红光LED芯片，先将一定量的红量子点荧光粉、蓝量子点荧光粉和绿量子点荧光粉均匀混合之后，再和胶水均匀混合形成量子点QD膜，再通过模压工艺将量子点QD膜覆盖在LED芯片142发光面上；LED通电后，蓝光芯片发出蓝光，绿光芯片发出绿光，红光芯片发出红光，然后再与量子点QD膜的红光、蓝光、绿光混合后，从LED中发出白光呈现给用户。Example 3, the LED includes a plurality of LED chips 142, and the plurality of LED chips 142 include a blue LED chip with a peak emission wavelength of 450nm, a green LED chip with a peak emission wavelength of 540nm, and a red LED chip with a peak emission wavelength of 700nm, First mix a certain amount of red quantum dot phosphor, blue quantum dot phosphor and green quantum dot phosphor evenly, and then mix it with glue to form a quantum dot QD film, and then cover the quantum dot QD film on the LED chip by molding process 142 light-emitting surface; after the LED is powered on, the blue light chip emits blue light, the green light chip emits green light, and the red light chip emits red light, and then mixes with the red light, blue light, and green light of the quantum dot QD film to emit from the LED White light is presented to the user.
示例四，LED包括多颗LED芯片142，多颗LED芯片142包括发光峰值波长为450nm的蓝光LED芯片、发光峰值波长为540nm的绿光LED芯片、和发光峰值波长为700nm的红光LED芯片，采用透明胶层覆盖在LED芯片142的发光面上；LED通电后，蓝光芯片发出蓝光，绿光芯片发出绿光，红光芯片发出红光，蓝光、绿光、红光混合后，从LED中发出白光呈现给用户。Example 4, the LED includes a plurality of LED chips 142, and the plurality of LED chips 142 include a blue LED chip with a peak emission wavelength of 450nm, a green LED chip with a peak emission wavelength of 540nm, and a red LED chip with a peak emission wavelength of 700nm, A transparent adhesive layer is used to cover the light-emitting surface of the LED chip 142; after the LED is powered on, the blue light chip emits blue light, the green light chip emits green light, and the red light chip emits red light. Emit white light to present to the user.
参见图15，图15为本实施例提供的一种具有导电平基板、且LED芯片正装在绝缘层上的LED结构示意图，图15中，基板151的正面为平面，多颗LED芯片152均为正装芯片，通过金属线154进行电连接；在基板151正面之上设置有绝缘层155，绝缘层155与基板151重合，在绝缘层155之上设置有电路层153，电路层153与铁基板151之间由绝缘层155实现绝缘隔离，LED芯片152设置在相邻两个电路层153之间，且直接设置在绝缘层155上的芯片放置区156上。电路层153包括分别与LED芯片152正极引脚1521和负极引脚1522连接的正极引脚焊接区1531和负极引脚焊接区1532，电路层153还包括用于将基板151上的灯珠区域内的LED芯片152与其他灯珠和/或基板151上其他器件的连接点连接的电路；各LED芯片152的正极引脚1521和负极引脚1522分别与电路层153上对应的正极引脚焊接区1531和负极引脚焊接区1532连接；同一个LED芯片152放置在相邻的两个电路层153之间，例如对于某一个LED芯片152，其正极引脚1521与其中一个电路层153的正极引脚焊接区1531连接，其负极引脚1522与另一个电路层153的负极引脚焊接区1532连接，这两个电路层153相邻。Referring to Fig. 15, Fig. 15 is a schematic diagram of an LED structure provided in this embodiment with a conductive flat substrate and LED chips mounted on an insulating layer. The front-loading chip is electrically connected through the metal wire 154; an insulating layer 155 is arranged on the front of the substrate 151, and the insulating layer 155 overlaps with the substrate 151, and a circuit layer 153 is arranged on the insulating layer 155, and the circuit layer 153 and the iron substrate 151 The insulating layer 155 realizes insulation isolation between them, and the LED chip 152 is arranged between two adjacent circuit layers 153 , and is directly arranged on the chip placement area 156 on the insulating layer 155 . The circuit layer 153 includes the positive pin welding area 1531 and the negative pin welding area 1532 respectively connected to the positive pin 1521 and the negative pin 1522 of the LED chip 152. The LED chip 152 is connected to the connection point of other lamp beads and/or other devices on the substrate 151; the positive pin 1521 and the negative pin 1522 of each LED chip 152 are respectively connected to the corresponding positive pin welding area on the circuit layer 153 1531 is connected to the negative pin welding area 1532; the same LED chip 152 is placed between two adjacent circuit layers 153, for example, for a certain LED chip 152, its positive pin 1521 is connected to the positive pin of one of the circuit layers 153 The pin welding area 1531 is connected, and its negative pin 1522 is connected to the negative pin welding area 1532 of another circuit layer 153, and these two circuit layers 153 are adjacent.
基于上述给出的条件，以下给出四个不同的示例：Based on the conditions given above, four different examples are given below:
示例一，LED包括多颗LED芯片152，多颗LED芯片152均为发光峰值波长为480nm的蓝光LED芯片，采用点胶工艺向多颗LED芯片152发光面涂覆掺入一定量的红色无机荧光粉和绿色无机荧光粉的封装胶水形成荧光胶层；LED通电后，LED芯片152发出蓝光，与荧光胶层的红荧光、绿荧光混合后，从LED中发出白光呈现给用户。Example 1, the LED includes a plurality of LED chips 152, and the plurality of LED chips 152 are blue LED chips with a luminous peak wavelength of 480nm, and a certain amount of red inorganic fluorescent light is coated on the light emitting surface of the plurality of LED chips 152 by a dispensing process. The packaging glue of powder and green inorganic phosphor powder forms a fluorescent adhesive layer; after the LED is powered on, the LED chip 152 emits blue light, which is mixed with the red fluorescent light and green fluorescent light of the fluorescent adhesive layer, and then emits white light from the LED to present to the user.
示例二，LED包括多颗LED芯片152，多颗LED芯片152包括发光峰值波长为480nm的蓝光LED芯片、发光峰值波长为510nm的绿光LED芯片，先将红色无机荧光粉和胶水均匀混合之后形成荧光粉胶体，再通过模压工艺将荧光粉胶体覆盖在LED芯片152发光面上，形成荧光膜；LED通电后，蓝光芯片发出蓝光，绿光芯片发出绿光，与荧光膜的红荧光混合后，从LED中发出白光呈现给用户。Example 2, the LED includes a plurality of LED chips 152, and the plurality of LED chips 152 include a blue LED chip with a luminous peak wavelength of 480nm and a green LED chip with a luminous peak wavelength of 510nm, which is formed by uniformly mixing red inorganic phosphor powder and glue phosphor colloid, and then cover the phosphor colloid on the light-emitting surface of the LED chip 152 through a molding process to form a fluorescent film; after the LED is powered on, the blue light chip emits blue light, and the green light chip emits green light. White light from the LED is presented to the user.
示例三，LED包括多颗LED芯片152，多颗LED芯片152包括发光峰值波长为480nm的蓝光LED芯片、发光峰值波长为510nm的绿光LED芯片、和发光峰值波长为680nm的红光LED芯片，先将一定量的红量子点荧光粉、蓝量子点荧光粉和绿量子点荧光粉均匀混合之后，再和胶水均匀混合形成量子点QD膜，再通过模压工艺将量子点QD膜覆盖在LED芯片152发光面上；LED通电后，蓝光芯片发出蓝光，绿光芯片发出绿光，红光芯片发出红光，然后再与量子点QD膜的红光、蓝光、绿光混合后，从LED中发出白光呈现给用户。Example 3, the LED includes a plurality of LED chips 152, and the plurality of LED chips 152 include a blue LED chip with a peak emission wavelength of 480nm, a green LED chip with a peak emission wavelength of 510nm, and a red LED chip with a peak emission wavelength of 680nm, First mix a certain amount of red quantum dot phosphor, blue quantum dot phosphor and green quantum dot phosphor evenly, and then mix it with glue to form a quantum dot QD film, and then cover the quantum dot QD film on the LED chip by molding process 152 light-emitting surface; after the LED is powered on, the blue light chip emits blue light, the green light chip emits green light, and the red light chip emits red light, and then mixes with the red light, blue light, and green light of the quantum dot QD film to emit from the LED White light is presented to the user.
示例四，LED包括多颗LED芯片152，多颗LED芯片152包括发光峰值波长为480nm的蓝光LED芯片、发光峰值波长为510nm的绿光LED芯片、和发光峰值波长为680nm的红光LED芯片，采用透明胶层覆盖在LED芯片152的发光面上；LED通电后，蓝光芯片发出蓝光，绿光芯片发出绿光，红光芯片发出红光，蓝光、绿光、红光混合后，从LED中发出白光呈现给用户。Example 4, the LED includes a plurality of LED chips 152, and the plurality of LED chips 152 include a blue LED chip with a peak emission wavelength of 480nm, a green LED chip with a peak emission wavelength of 510nm, and a red LED chip with a peak emission wavelength of 680nm, A transparent adhesive layer is used to cover the light-emitting surface of the LED chip 152; after the LED is powered on, the blue light chip emits blue light, the green light chip emits green light, and the red light chip emits red light. Emit white light to present to the user.
参见图16，图16为本实施例提供的一种具有导电平基板、且LED芯片为倒装芯片的LED结构示意图，图16中，LED基板161的正面为平面，基板161的材质为铁基板，多颗LED芯片162均为倒装芯片，倒装芯片是指LED芯片162通过底部的电极与基板161之上的电路层163进行电连接；在铁基板161正面之上设置有绝缘层164，绝缘层164与基板161重合，且绝缘层164与铁基板161的面积大小相同，在绝缘层164之上设置有电路层163，电路层163与铁基板161之间由绝缘层164实现绝缘隔离；电路层163包括分别与LED芯片162正极引脚1621和负极引脚1622连接的正极引脚焊接区1631和负极引脚焊接区1632，电路层163还包括用于将基板161上的灯珠区域内的LED芯片162与其他灯珠和/或基板161上其他器件的连接点连接的电路；各LED芯片162的正极引脚1621和负极引脚1622分别与电路层163上对应的正极引脚焊接区1631和负极引脚焊接区1632连接；同一个LED芯片162放置在相邻的两个电路层163上，例如对于某一个LED芯片162，其正极引脚与1621其中一个电路层163的正极引脚焊接区1631连接，其负极引脚1622与另一电路层的负极引脚焊接区1632连接，这两个电路层163相邻，相邻两个电路层163之间是绝缘隔离的；LED芯片162之间通过芯片连接电路实现电连接。Referring to Fig. 16, Fig. 16 is a schematic diagram of the LED structure provided by this embodiment with a conductive flat substrate and the LED chip is a flip chip. In Fig. 16, the front of the LED substrate 161 is a plane, and the material of the substrate 161 is an iron substrate , a plurality of LED chips 162 are flip chips, flip chip means that the LED chips 162 are electrically connected to the circuit layer 163 on the substrate 161 through the electrodes at the bottom; an insulating layer 164 is arranged on the front of the iron substrate 161, The insulating layer 164 overlaps with the substrate 161, and the insulating layer 164 and the iron substrate 161 have the same area, and the circuit layer 163 is arranged on the insulating layer 164, and the insulating layer 164 realizes insulation isolation between the circuit layer 163 and the iron substrate 161; The circuit layer 163 includes a positive pin welding area 1631 and a negative pin welding area 1632 respectively connected to the positive pin 1621 and the negative pin 1622 of the LED chip 162. The LED chip 162 is connected to the connection point of other lamp beads and/or other devices on the substrate 161; the positive pin 1621 and the negative pin 1622 of each LED chip 162 are respectively connected to the corresponding positive pin welding area on the circuit layer 163 1631 is connected to the negative pin welding area 1632; the same LED chip 162 is placed on two adjacent circuit layers 163, for example, for a certain LED chip 162, its positive pin is connected to the positive pin of one of the circuit layers 163 of 1621 The welding area 1631 is connected, and its negative pin 1622 is connected to the negative pin welding area 1632 of another circuit layer. These two circuit layers 163 are adjacent, and the two adjacent circuit layers 163 are insulated and isolated; the LED chip 162 The electrical connection is realized through the chip connection circuit.
基于上述给出的条件，以下给出四个不同的示例：Based on the conditions given above, four different examples are given below:
示例一，LED包括多颗LED芯片162，多颗LED芯片162均为发光峰值波长为490nm的蓝光LED芯片，采用点胶工艺向多颗LED芯片162发光面涂覆掺入一定量的红色无机荧光粉和绿色无机荧光粉的封装胶水形成荧光胶层；LED通电后，LED芯片162发出蓝光，与荧光胶层的红荧光、绿荧光混合后，从LED中发出白光呈现给用户。Example 1, the LED includes a plurality of LED chips 162, and the plurality of LED chips 162 are blue LED chips with a luminous peak wavelength of 490nm, and a certain amount of red inorganic fluorescent light is coated on the light-emitting surface of the plurality of LED chips 162 by a dispensing process. The packaging glue of powder and green inorganic phosphor powder forms a fluorescent adhesive layer; after the LED is powered on, the LED chip 162 emits blue light, which mixes with the red fluorescent light and green fluorescent light of the fluorescent adhesive layer, and then emits white light from the LED to present to the user.
示例二，LED包括多颗LED芯片162，多颗LED芯片162包括发光峰值波长为490nm的蓝光LED芯片、发光峰值波长为510nm的绿光LED芯片，先将红色无机荧光粉和胶水均匀混合之后形成荧光粉胶体，再通过模压工艺将荧光粉胶体覆盖在LED芯片162发光面上，形成荧光膜；LED通电后，蓝光芯片发出蓝光，绿光芯片发出绿光，与荧光膜的红荧光混合后，从LED中发出白光呈现给用户。Example 2, the LED includes a plurality of LED chips 162, and the plurality of LED chips 162 include a blue LED chip with a luminous peak wavelength of 490nm and a green LED chip with a luminous peak wavelength of 510nm, which is formed by uniformly mixing red inorganic phosphor powder and glue phosphor colloid, and then cover the phosphor colloid on the light-emitting surface of the LED chip 162 through a molding process to form a fluorescent film; after the LED is powered on, the blue light chip emits blue light, and the green light chip emits green light. White light from the LED is presented to the user.
示例三，LED包括多颗LED芯片162，多颗LED芯片162包括发光峰值波长为490nm的蓝光LED芯片、发光峰值波长为510nm的绿光LED芯片、和发光峰值波长为700nm的红光LED芯片，先将一定量的红量子点荧光粉、蓝量子点荧光粉和绿量子点荧光粉均匀混合之后，再和胶水均匀混合形成量子点QD膜，再通过模压工艺将量子点QD膜覆盖在LED芯片162发光面上；LED通电后，蓝光芯片发出蓝光，绿光芯片发出绿光，红光芯片发出红光，然后再与量子点QD膜的红光、蓝光、绿光混合后，从LED中发出白光呈现给用户。Example 3, the LED includes a plurality of LED chips 162, and the plurality of LED chips 162 include a blue LED chip with a peak emission wavelength of 490nm, a green LED chip with a peak emission wavelength of 510nm, and a red LED chip with a peak emission wavelength of 700nm, First mix a certain amount of red quantum dot phosphor, blue quantum dot phosphor and green quantum dot phosphor evenly, and then mix it with glue to form a quantum dot QD film, and then cover the quantum dot QD film on the LED chip by molding process 162 light-emitting surface; after the LED is powered on, the blue light chip emits blue light, the green light chip emits green light, and the red light chip emits red light, and then mixes with the red light, blue light, and green light of the quantum dot QD film, and emits from the LED White light is presented to the user.
示例四，LED包括多颗LED芯片162，多颗LED芯片162包括发光峰值波长为490nm的蓝光LED芯片、发光峰值波长为510nm的绿光LED芯片、和发光峰值波长为700nm的红光LED芯片，采用透明胶层覆盖在LED芯片162的发光面上；LED通电后，蓝光芯片发出蓝光，绿光芯片发出绿光，红光芯片发出红光，蓝光、绿光、红光混合后，从LED中发出白光呈现给用户。Example 4, the LED includes a plurality of LED chips 162, and the plurality of LED chips 162 include a blue LED chip with a peak emission wavelength of 490nm, a green LED chip with a peak emission wavelength of 510nm, and a red LED chip with a peak emission wavelength of 700nm, A transparent adhesive layer is used to cover the light-emitting surface of the LED chip 162; after the LED is powered on, the blue light chip emits blue light, the green light chip emits green light, and the red light chip emits red light. Emit white light to present to the user.
实施例三Embodiment three
本实施例还提供一种发光装置，该发光装置包括上述实施例一或实施例二所示例的LED。本实施例中的发光装置可为照明装置、光信号指示装置、补光装置或背光装置等。为照明装置时，具体可以为应用于各种领域的照明装置，例如日常生活中的台灯、日光灯、吸顶灯、筒灯、路灯、投射灯等等，又例如汽车中的远光灯、近光灯、氛围灯等，又例如医用中的手术灯、低电磁照明灯、各种医用仪器的照明灯，又例如应装饰领域照明中的各种彩灯、景观照明灯、广告灯等等；为光信号指示装置时，具体可以为应用于各种领域的光信号指示装置，例如交通领域的信号指示灯，通信领域中通信设备上的各种信号状态指示灯；为补光装置时，可以为摄影领域的补光灯，例如闪光灯、补光灯，也可以为农业领域为植物补光的植物补光灯等；为背光装置时，可以为应用于各种背光领域的背光模组，例如可应用于显示器、电视机、手机等移动终端、广告机等设备上。This embodiment also provides a light emitting device, which includes the LED exemplified in the first or second embodiment above. The light emitting device in this embodiment may be an illuminating device, a light signal indicating device, a supplementary light device or a backlight device, and the like. When it is a lighting device, it can specifically be a lighting device used in various fields, such as desk lamps, fluorescent lamps, ceiling lamps, downlights, street lights, projection lights, etc. in daily life, and for example, high beams and low beams in cars Lamps, ambient lights, etc., such as surgical lights, low-electromagnetic lighting, and lighting for various medical instruments, and various colored lights, landscape lighting, advertising lights, etc. in the field of decorative lighting; for In the case of an optical signal indicating device, it can specifically be an optical signal indicating device applied in various fields, such as a signal indicator light in the traffic field, and various signal status indicators on communication equipment in the communication field; when it is a supplementary light device, it can be The supplementary light in the field of photography, such as flashlight, supplementary light, can also be a plant supplementary light for plant supplementation in the agricultural field; when it is a backlight device, it can be a backlight module used in various backlight fields, such as a Applied to monitors, TV sets, mobile phones and other mobile terminals, advertising machines and other equipment.
应当理解的是，上述应用仅仅是本实施例所示例的几种应用，应当理解的是LED的应用并不限于上述示例的几种领域。It should be understood that the above applications are only some of the applications exemplified in this embodiment, and it should be understood that the application of LEDs is not limited to the several fields of the above examples.
以上内容是结合具体的实施方式对本发明实施例所作的进一步详细说明，不能认定本发明的具体实施只局限于这些说明。对于本发明所属技术领域的普通技术人员来说，在不脱离本发明构思的前提下，还可以做出若干简单推演或替换，都应当视为属于本发明的保护范围。The above content is a further detailed description of the embodiments of the present invention in conjunction with specific implementation modes, and it cannot be assumed that the specific implementation of the present invention is limited to these descriptions. For those of ordinary skill in the technical field of the present invention, without departing from the concept of the present invention, some simple deduction or replacement can be made, which should be regarded as belonging to the protection scope of the present invention.
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| CN201810482009.9ACN110504244B (en) | 2018-05-18 | 2018-05-18 | LED and light-emitting device |
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| CN101290964A (en)* | 2007-04-20 | 2008-10-22 | 丰田合成株式会社 | Light emitting device, light source device and method for manufacturing light emitting device |
| US20110001148A1 (en)* | 2009-07-06 | 2011-01-06 | Zhuo Sun | Thin flat solid state light source module |
| WO2011136236A1 (en)* | 2010-04-26 | 2011-11-03 | パナソニック電工株式会社 | Leadframe, wiring board, light emitting unit, and illuminating apparatus |
| WO2011147124A1 (en)* | 2010-05-28 | 2011-12-01 | 深圳市聚飞光电股份有限公司 | Led street lamp and high power led device |
| CN102856470A (en)* | 2012-04-20 | 2013-01-02 | 陕西唐华能源有限公司 | LED (Light Emitting Diode) chip encapsulating substrate structure |
| US20130148344A1 (en)* | 2011-12-08 | 2013-06-13 | Po-Jen Su | Light emitting device |
| WO2014086079A1 (en)* | 2012-12-06 | 2014-06-12 | 上海顿格电子贸易有限公司 | Led light-emitting component support |
| CN204905290U (en)* | 2015-08-14 | 2015-12-23 | 杨志强 | A kind of LED encapsulation bracket |
| CN105529325A (en)* | 2016-01-15 | 2016-04-27 | 珠海格力电器股份有限公司 | Double-color temperature LED packaging structure |
| CN107068840A (en)* | 2016-09-30 | 2017-08-18 | 深圳市玲涛光电科技有限公司 | Bar shaped light-emitting component, backlight module and electronic equipment |
| CN208422910U (en)* | 2018-05-18 | 2019-01-22 | 深圳市聚飞光电股份有限公司 | LED and light emitting device |
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101290964A (en)* | 2007-04-20 | 2008-10-22 | 丰田合成株式会社 | Light emitting device, light source device and method for manufacturing light emitting device |
| US20110001148A1 (en)* | 2009-07-06 | 2011-01-06 | Zhuo Sun | Thin flat solid state light source module |
| WO2011136236A1 (en)* | 2010-04-26 | 2011-11-03 | パナソニック電工株式会社 | Leadframe, wiring board, light emitting unit, and illuminating apparatus |
| WO2011147124A1 (en)* | 2010-05-28 | 2011-12-01 | 深圳市聚飞光电股份有限公司 | Led street lamp and high power led device |
| US20130148344A1 (en)* | 2011-12-08 | 2013-06-13 | Po-Jen Su | Light emitting device |
| CN103165592A (en)* | 2011-12-08 | 2013-06-19 | 新世纪光电股份有限公司 | Light emitting device |
| CN102856470A (en)* | 2012-04-20 | 2013-01-02 | 陕西唐华能源有限公司 | LED (Light Emitting Diode) chip encapsulating substrate structure |
| WO2014086079A1 (en)* | 2012-12-06 | 2014-06-12 | 上海顿格电子贸易有限公司 | Led light-emitting component support |
| CN204905290U (en)* | 2015-08-14 | 2015-12-23 | 杨志强 | A kind of LED encapsulation bracket |
| CN105529325A (en)* | 2016-01-15 | 2016-04-27 | 珠海格力电器股份有限公司 | Double-color temperature LED packaging structure |
| CN107068840A (en)* | 2016-09-30 | 2017-08-18 | 深圳市玲涛光电科技有限公司 | Bar shaped light-emitting component, backlight module and electronic equipment |
| CN208422910U (en)* | 2018-05-18 | 2019-01-22 | 深圳市聚飞光电股份有限公司 | LED and light emitting device |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111462643A (en)* | 2020-03-17 | 2020-07-28 | 深圳市奥拓电子股份有限公司 | L ED lamp pearl and L ED show structure |
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| CN110504244B (en) | 2025-01-17 |
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