技术领域technical field
本发明涉及电光调制器领域，具体涉及一种双波导耦合式的等离子电光调制器。The invention relates to the field of electro-optical modulators, in particular to a dual-waveguide coupled plasma electro-optical modulator.
背景技术Background technique
片上网络处理器可以方便集成和扩展众多处理器内核，处理器内核之间的通信容量大，因此，片上网络处理器具有很强的可扩展性和处理能力。在设计和制造高性能处理时，当前许多处理器生产商都采用的片上网络这样体系架构设计制造高性能处理器。但是电学片上网络处理器的通信网络不可避免地带来功耗大，通信延迟等问题。集成光电器件和光波导的工艺水平的提高，片上光网络能够有效地解决电学网络中的串扰、带宽小、通信延迟等问题，因此，当前片上光网络成为解决多核处理器中通信问题最有效的途径之一。片上光网络的研究者提出了各种各样的拓扑结构，如2D 4×4Mesh、2D 4×4Torus\Octagon\3dMesh等。The on-chip network processor can easily integrate and expand many processor cores, and the communication capacity between the processor cores is large. Therefore, the on-chip network processor has strong scalability and processing capability. When designing and manufacturing high-performance processing, many processor manufacturers currently use architectures such as network-on-chip to design and manufacture high-performance processors. However, the communication network of the electrical on-chip network processor inevitably brings problems such as high power consumption and communication delay. With the improvement of the technological level of integrated optoelectronic devices and optical waveguides, the on-chip optical network can effectively solve the problems of crosstalk, small bandwidth, and communication delay in the electrical network. Therefore, the current on-chip optical network has become the most effective way to solve the communication problems in multi-core processors. one. On-chip optical network researchers have proposed various topologies, such as 2D 4×4Mesh, 2D 4×4Torus\Octagon\3dMesh, etc.
其中，ORNoC采用Wavelength Division Multiplexing(简称：WDM)方式寻址，对于处理器内核数量不多的情况，由于其不需要路由转发，大大减少了路由延迟，在高速数据单向传输和实时性要求高的情况下，如高速数据采集系统、高性能实时控制系统，采用ORNoC的片上光网络处理器具有明显的优势。Among them, ORNoC adopts Wavelength Division Multiplexing (abbreviation: WDM) for addressing. For the case of a small number of processor cores, because it does not require routing forwarding, routing delay is greatly reduced, and high-speed data unidirectional transmission and real-time requirements are high. In the case of high-speed data acquisition systems and high-performance real-time control systems, the on-chip optical network processor using ORNoC has obvious advantages.
例如具有八个处理器内核的ORNoC片上网络处理器，处理器内核之间通过环形光波导进行通信，环形波导可以为一到多条光波导构成，采用波分复用的形式可以大大提高通信容量，增加多条波导，可以翻倍地增加通信容量。处理器内核之间的通信过程中，处理器内核之间需要通信时，发送端输出电学信号，电信号被放大或者变成热量去控制电光调制器通，相对应波长的光学信号将会被电光调制器调制，接收端相对应的光学滤波器将收到该波长的光信号，接着PD光电转换器将光学信号还原为电学信号，接收端收到发送端发来的电学信号。其中，电光调制器的性能参数在ORNoC片上网络中至关重要。For example, an ORNoC on-chip network processor with eight processor cores communicates between the processor cores through a ring optical waveguide. The ring waveguide can be composed of one or more optical waveguides. The use of wavelength division multiplexing can greatly improve the communication capacity. , adding multiple waveguides can double the communication capacity. In the process of communication between processor cores, when communication between processor cores is required, the transmitting end outputs an electrical signal, which is amplified or turned into heat to control the electro-optical modulator, and the optical signal of the corresponding wavelength will be electro-optical. The modulator modulates, the optical filter corresponding to the receiving end will receive the optical signal of this wavelength, and then the PD photoelectric converter restores the optical signal to an electrical signal, and the receiving end receives the electrical signal sent by the transmitting end. Among them, the performance parameters of the electro-optic modulator are crucial in the ORNoC on-chip network.
现有的由微环谐振器和Mach-Zehnder Modulato(简称：MZM)光调制器构成。Mach-Zehnder Modulator和微环谐振器电光调制器的尺寸大通常在几十um，调制速率一般在几十G，微环谐振器调制器可以将尺寸做的较小，但是其折射率容易受温度影响，因此热稳定性差。本文提出一种具有双波导耦合式的等离子电光调制器，能够解决上述技术问题，并适用于ORNoC拓扑结构的片上光网络。The existing one consists of a micro-ring resonator and a Mach-Zehnder Modulato (abbreviation: MZM) optical modulator. The size of the Mach-Zehnder Modulator and the micro-ring resonator electro-optic modulator is usually tens of um, and the modulation rate is generally tens of G. The size of the micro-ring resonator modulator can be made smaller, but its refractive index is easily affected by temperature Therefore, the thermal stability is poor. This paper proposes a plasmonic electro-optic modulator with dual waveguide coupling, which can solve the above technical problems and is suitable for on-chip optical networks with ORNoC topology.
发明内容SUMMARY OF THE INVENTION
本发明所要解决的技术问题是现有技术中存在的尺寸与平均耦合效率、消光比性能不能兼容的技术问题。提供一种新的双波导耦合式的等离子电光调制器，该双波导耦合式的等离子电光调制器具有平均耦合效率、消光比、尺寸均衡的特点。The technical problem to be solved by the present invention is the technical problem that the size, average coupling efficiency and extinction ratio performance in the prior art are incompatible. A new dual-waveguide-coupled plasma electro-optic modulator is provided. The double-waveguide-coupled plasma electro-optic modulator has the characteristics of average coupling efficiency, extinction ratio, and size balance.
为解决上述技术问题，采用的技术方案如下：In order to solve the above technical problems, the technical solutions adopted are as follows:
一种双波导耦合式的等离子电光调制器，连接于片上光网络，所述双波导耦合式的等离子电光调制器包括SiO2基，SiO2基上刻蚀三条波导参数一致的Si波导，外侧的Si波导用于输入激光，另外一侧的Si波导用于传输调制好的激光信号并连接片上光网络；位于中间的Si波导的上方沉积有第一HfO2层、ITO层、第二HfO2层及导体层；所述导体层施加阳极电压，位于SiO2基上方的Si波导面用于施加阴极电压。A dual-waveguide-coupled plasma electro-optic modulator is connected to an on-chip optical network. The dual-waveguide-coupled plasma electro-optic modulator comprises a SiO2 base, on which three Si waveguides with the same waveguide parameters are etched, and an outer Si waveguide is etched on the SiO2 base. It is used to input the laser, and the Si waveguide on the other side is used to transmit the modulated laser signal and connect the on-chip optical network; the first HfO2 layer, the ITO layer, the second HfO2 layer and the conductor layer are deposited above the Si waveguide in the middle; An anode voltage is applied to the conductor layer, and the Si waveguide surface above the SiO2 base is used to apply a cathode voltage.
本发明的工作原理：通过在SiO2基上刻蚀三条Si光波导，然后在中间Si光波导上方沉积类似“三明治”HfO2夹层的ITO薄膜，通过调控ITO积累层中载流子浓度以改变中间岛形介质的有效折射率，输入的高速电信号有效地控制光信号的“ON”和“OFF”两种状态，实现将高速电信号调制为光信号，光信号从输入波导耦合至环形波导，特别适用于ORNoC体系结构的片上光网络处理器。The working principle of the present invention: by etching three Si optical waveguides on the SiO2 base, and then depositing an ITO film similar to a "sandwich" HfO2 interlayer above the intermediate Si optical waveguide, the intermediate island is changed by regulating the carrier concentration in the ITO accumulation layer. The effective refractive index of the shaped medium, the input high-speed electrical signal effectively controls the "ON" and "OFF" states of the optical signal, and realizes the modulation of the high-speed electrical signal into an optical signal. The optical signal is coupled from the input waveguide to the ring waveguide, especially On-chip optical network processor for ORNoC architecture.
上述方案中，为优化，进一步地，所述Si波导为脊型Si波导。In the above solution, for optimization, further, the Si waveguide is a ridge-type Si waveguide.
进一步地，所述导体层为Au层。Further, the conductor layer is an Au layer.
进一步地，所述脊型Si波导的高度为透视谱窗口发生移动的高度。当改变Si光波导高度时，发现透视谱窗口发生移动，可以做成WDM模式以提高通信容量。Further, the height of the ridge-type Si waveguide is the height at which the see-through spectral window moves. When changing the height of the Si optical waveguide, it is found that the see-through spectral window moves and can be made into a WDM mode to improve the communication capacity.
进一步地，所述片上光网络为ORNoC拓扑结构的片上光网络。Further, the on-chip optical network is an on-chip optical network of ORNoC topology.
进一步地，沉积采用喷溅工艺方法。Further, the deposition adopts a sputtering process method.
进一步地，所述脊型Si波导的宽度Wg＝400nm，相邻Si波导之间的间距Wgap＝150nm，位于两侧的两条脊型Si波导的波导高度Hg＝180nm，位于中间的脊型Si波导高度Hig＝180nm，第一HfO2层的厚度Hig＝15nm、ITO层厚度HHfO＝20nm、第二HfO2层厚度Hig＝15nm、Au层厚度HAu＝500nm及脊型Si波导长度Lcoupling＝8500nm；所述双波导耦合式的等离子电光调制器的工作波长为1400nm-1600nm，中心波长为1550nm。Further, the width of the ridge-type Si waveguide is Wg=400nm, the distance between adjacent Si waveguides is Wgap=150nm, the waveguide height of the two ridge-type Si waveguides located on both sides is Hg=180nm, and the ridge-type Si waveguide located in the middle is Hg=180nm. The height of the waveguide is Hig=180nm, the thickness of the first HfO2 layer is Hig=15nm, the thickness of the ITO layer is HHfO=20nm, the thickness of the second HfO2 layer is Hig=15nm, the thickness of the Au layer is HAu=500nm, and the length of the ridge-type Si waveguide Lcoupling=8500nm; the The working wavelength of the dual-waveguide coupled plasma electro-optic modulator is 1400nm-1600nm, and the center wavelength is 1550nm.
根据Yariv的微扰理论，可以将耦合系统当成一个受到某种微扰的理想波导，则介质光波导中的波动方程为：According to Yariv's perturbation theory, the coupled system can be regarded as an ideal waveguide subjected to certain perturbations, and the wave equation in the dielectric optical waveguide is:
在微扰作用下，波导内的介质的极化强度p发生了微扰变动，可以表示为：Under the action of perturbation, the polarization intensity p of the medium in the waveguide undergoes a perturbation change, which can be expressed as:
P(r，t)＝P0(r，t)+Ppert(r，t)；P(r, t)=P0 (r, t)+Ppert (r, t);
其中，P0(r，t)代表了不存在扰动时波导中介质的极化强度；Ppert(r，t)代表耦合波相关的各种扰动引起的附加极化强度。Among them, P0 (r, t) represents the polarization intensity of the medium in the waveguide when there is no disturbance; Ppert (r, t) represents the additional polarization intensity caused by various disturbances related to the coupled wave.
由此，推导出Ex、Ey和Ez场分量为：From this, the Ex , Ey and Ez field components are derived as:
将存在扰动的波导中的光场展开为波导中所有可能模式的电磁场的线性叠加，根据各模式波场之间的正交性，在模式耦合导致的波场幅度“缓变”的条件之下，经过分析推导计算出：The optical field in the perturbed waveguide is expanded into a linear superposition of the electromagnetic fields of all possible modes in the waveguide. According to the orthogonality between the wave fields of each mode, the amplitude of the wave field caused by the mode coupling is "gradually changed". Below, through analysis and derivation, it is calculated:
其中，左边的两项分别代表一个-z方向传播的波和一个+z方向传播的波和分别为两个方向第S阶模式波的振幅函数。Among them, the two items on the left respectively represent a wave propagating in the -z direction and a wave propagating in the +z direction and are the amplitude functions of the S-th mode waves in the two directions, respectively.
本发明的电光调制结构可以将其看成如图6的两根相互靠近的波导a、b。两根波导各自的折射率分别为na和nb，当两个波导距离足够远时，没有发生耦合，其波场分别为和各自的传播常数为βa和βb。当两个波导距离足够近时，发生了耦合现象，波场可以近似地表达为两个无扰动时波场的和：The electro-optical modulation structure of the present invention can be regarded as two waveguides a and b that are close to each other as shown in FIG. 6 . The respective refractive indices of the two waveguides arena andnb respectively. When the two waveguides are far enough apart, no coupling occurs, and their wave fields are and The respective propagation constants are βa and βb . When the two waveguides are close enough, the coupling phenomenon occurs, and the wavefield can be approximately expressed as the sum of the two unperturbed wavefields:
计算出扰动极化强度Ppert(r，t)为：The perturbed polarization strength Ppert (r, t) is calculated as:
其中，n(x)是具有耦合的波导的折射率分布函数。可计算得到耦合方程：where n(x) is the refractive index distribution function of the waveguide with coupling. The coupling equation can be calculated:
其中M代表耦合的波导中，波的传输系数相对于无耦合波导的βa和βb将变化到βa+M和βb+M，耦合系数为：where M represents the coupled waveguide, the transmission coefficient of the wave will change to βa +M and βb + M relative to the βa and βb of the uncoupled waveguide, and the coupling coefficient is:
计算出，a、b波导的导波模间的传输常数相差为：It is calculated that the difference between the transmission constants of the guided modes of the a and b waveguides is:
2δ＝(βb+Mb)-(βa+Ma)；2δ=(βb +Mb )-(βa +Ma );
其中，δ称为相位失配因子。Among them, δ is called the phase mismatch factor.
模式耦合导致的波能量转移，只有在接近匹配时，即δ＝0时，才能发生耦合。The wave energy transfer due to mode coupling can only occur when it is close to matching, that is, when δ=0.
假设在z＝0处只有波导b存在单模光传播，微扰发生在z＞0区域，即Assuming that there is only single-mode light propagation in the waveguide b at z=0, the perturbation occurs in the region of z>0, that is,
B(0)＝B0，A(0)＝A0；B(0)=B0 , A(0)=A0 ;
波导a、b内光波能量分别用Pa＝|A(z)|2和Pb＝|B(z)|2来表示，根据能量守恒原则，可得：The light wave energy in waveguides a and b is represented by Pa =|A(z)|2 and Pb =|B(z)|2 respectively. According to the principle of energy conservation, we can get:
当a、b两条波导的尺寸、折射率等结构及其材料参数相同时，耦合系数有：Kba＝Kab，Mab＝Mba，因此有：When the size, refractive index and other structure and material parameters of the two waveguides a and b are the same, the coupling coefficients are: Kba =Kab , Mab =Mba , so there are:
上式中K2＝|Kab|2。波导a、b中所携带的能量分别为：In the above formula, K2 =|Kab |2 . The energy carried in the waveguides a and b are respectively:
Pb(z)＝P0-Pa(z)；Pb (z)=P0 -Pa (z);
上式中P0＝|B(0)|2为波导b的输入能量。In the above formula, P0 =|B(0)|2 is the input energy of the waveguide b.
在相位匹配时，即两个波导的传播常数相等的情况下，传输距离为L＝π/2K时，能量完全从波导b中转移到波导a中。When the phases are matched, that is, when the propagation constants of the two waveguides are equal, and the transmission distance is L=π/2K, the energy is completely transferred from the waveguide b to the waveguide a.
本发明中的激活材料-氧化铟锡(indium tin oxide，ITO)是具有介电常数电调特性的透明导电氧化物(transparent conductor oxides,TCOs)，与硅基金属-氧化物-半导体(metal-oxide-semiconductor，MOS)具有类似场效应，当外加电压作用时，TCOs材料层在与介质层接触的界面处可以迅速形成载流子积累区或者耗尽区，通过外加偏压可调控积累区或耗尽区载流子的浓度，进而实现TCOs介电常数(折射率)的改变。当TCOs材料层介电常数实部接近零时，定义其为介电常数近零态(epsilon-near-zero,ENZ)。介电常数近零态能极大程度上增强光场与电光材料层的重叠积分提高光吸收调制效率，因此大多数基于TCOs材料的电光调制器通常采用狭缝波导或混合表面等离激元波导结构来构建MOS电容器结构，并通过施加适当电压以获得TCOs材料介电常数近零态，从而实现电吸收调制。其介电常数符合Drude模型：The active material in the present invention-indium tin oxide (ITO) is a transparent conductive oxide (transparent conductor oxides, TCOs) with a dielectric constant electrical adjustment characteristic, and silicon-based metal-oxide-semiconductor (metal- oxide-semiconductor, MOS) has a similar field effect. When an applied voltage is applied, the TCOs material layer can quickly form a carrier accumulation region or depletion region at the interface in contact with the dielectric layer. The concentration of carriers in the depletion region, and thus the change in the dielectric constant (refractive index) of TCOs. When the real part of the dielectric constant of the TCOs material layer is close to zero, it is defined as the dielectric constant near zero state (epsilon-near-zero, ENZ). The dielectric constant near zero state can greatly enhance the overlap integral of the optical field and the electro-optic material layer to improve the optical absorption modulation efficiency. Therefore, most electro-optic modulators based on TCOs materials usually use slit waveguides or hybrid surface plasmon waveguides. structure to build a MOS capacitor structure and achieve electroabsorption modulation by applying an appropriate voltage to obtain a near-zero dielectric constant of the TCOs material. Its dielectric constant conforms to the Drude model:
上式中ε∞为高频介电常数(ε∞＝3.9)，NITO是ITO材料的电子浓度，ω是角频率，γ是载流子散射率(γ＝1.8×1014rad/s)，m*是载流子有效质量(m*＝0.35m0，m0为电子质量，m0＝9.31×10-31kg)，q是电子电荷(q＝1.6×10-19C)，ε0是自由空间介电常数(ε0＝8.85×10-12F/m。In the above formula, ε∞ is the high-frequency dielectric constant (ε∞ =3.9), NITO is the electron concentration of the ITO material, ω is the angular frequency, γ is the carrier scattering rate (γ=1.8×1014rad/s), m* is the effective mass of the carrier (m* =0.35m0 , m0 is the electron mass, m0 =9.31×10−31 kg), q is the electron charge (q=1.6×10−19 C), and ε0 is Free space dielectric constant (ε0 =8.85×10−12 F/m.
为了计算ITO载流子浓度受电压控制的变化，本发明采用了以下模型来进行计算：In order to calculate the voltage-controlled change of ITO carrier concentration, the present invention adopts the following model for calculation:
上式中N0＝1×10-19，是ITO的固有载流子浓度。为HfO2厚度，本设计而Hacc是HfO2在ITO表面下方积累的自由载流子的厚度。Hacc＝7nm。HfO2具有很高的直流介电常数In the above formula, N0 =1×10-19 , which is the intrinsic carrier concentration of ITO. For HfO2 thickness, this design Whereas Hacc is the thickness of free carriers accumulated byHfO below the ITO surface. Hacc = 7 nm.HfO2 has a high DC dielectric constant
计算出ITO薄膜的介电常数的随着电压控制的变化情况，如图4和图5。由折射率的变化情况可知ITO的复介电常数明显受到电压的控制，且在2.35V电压时，复介电常数已经近零态能，实现了本发明中“OFF”状态的转换。通过复介电常数和复折射率的转换可得在OFF状态下，复折射率随波长的变化情况。The variation of the dielectric constant of the ITO film with voltage control was calculated, as shown in Figure 4 and Figure 5. It can be seen from the change of refractive index that the complex permittivity of ITO is obviously controlled by the voltage, and at a voltage of 2.35V, the complex permittivity is close to zero state energy, which realizes the transition of the "OFF" state in the present invention. Through the conversion of the complex permittivity and the complex refractive index, the variation of the complex refractive index with wavelength in the OFF state can be obtained.
本发明的有益效果：通过3D-FDTD模拟调制器的电学调控光场，清楚地显示了调制器间的耦合传输特性。经过优化的结构，使用光源波长为1550nm时，光源与硅波导之间的平均耦合效率达到了70％以上，消光比为-14.1dB，插入损耗为为2.1dB。单个电光调制器尺寸小于8.50um*0.83um，单个调制器的调制速率为0.7171Tbit/S，当使用WDM模式时，传输速率为2.1Tbit/S，每传输1bit信号能量消耗为5.7211fJ。The beneficial effects of the present invention are as follows: through the 3D-FDTD analog modulator's electrical regulation of the light field, the coupling and transmission characteristics between the modulators are clearly displayed. With the optimized structure, when the wavelength of the light source is 1550nm, the average coupling efficiency between the light source and the silicon waveguide reaches more than 70%, the extinction ratio is -14.1dB, and the insertion loss is 2.1dB. The size of a single electro-optic modulator is less than 8.50um*0.83um, and the modulation rate of a single modulator is 0.7171Tbit/S. When the WDM mode is used, the transmission rate is 2.1Tbit/S, and the energy consumption per transmitted 1bit signal is 5.7211fJ.
附图说明Description of drawings
下面结合附图和实施例对本发明进一步说明。The present invention will be further described below in conjunction with the accompanying drawings and embodiments.
图1，本实施例电光调制器结构示意图。FIG. 1 is a schematic structural diagram of the electro-optic modulator in this embodiment.
图2，本实施例电光调制器结构平面示意图。FIG. 2 is a schematic plan view of the structure of the electro-optic modulator in this embodiment.
图3，本实施例电光调制器结构尺寸示意图。FIG. 3 is a schematic diagram of the structure and size of the electro-optic modulator in this embodiment.
图4，ITO薄膜的介电常数的随着电压控制的变化示意图。FIG. 4 is a schematic diagram of the variation of the dielectric constant of the ITO film with voltage control.
图5，ITO薄膜的介电常数的随着波长变化示意图。FIG. 5 is a schematic diagram of the dielectric constant of the ITO thin film as a function of wavelength.
图6，硅基双波导光学耦合结构示意图。FIG. 6 is a schematic diagram of a silicon-based dual-waveguide optical coupling structure.
图7，施加电压(OFF)状态示意图。FIG. 7 is a schematic diagram of the applied voltage (OFF) state.
图8，未施加电压(ON)状态示意图。FIG. 8 is a schematic diagram of no voltage applied (ON) state.
图9，光源为1400-1600nm波长各个状态的透射谱示意图。FIG. 9 is a schematic diagram of the transmission spectrum of each state of the light source with a wavelength of 1400-1600 nm.
图10，光源为1400-1600nm波长各个状态的插入损耗示意图。Fig. 10 is a schematic diagram of the insertion loss of each state of the light source with a wavelength of 1400-1600 nm.
图11，光源为1400-1600nm波长各个状态的消光比示意图。FIG. 11 is a schematic diagram of the extinction ratio of each state of the light source with a wavelength of 1400-1600 nm.
图12，波导高度分别为160、180、200时透射谱示意图。Figure 12 is a schematic diagram of the transmission spectrum when the waveguide heights are 160, 180, and 200 respectively.
具体实施方式Detailed ways
为了使本发明的目的、技术方案及优点更加清楚明白，以下结合实施例，对本发明进行进一步详细说明。应当理解，此处所描述的具体实施例仅用以解释本发明，并不用于限定本发明。In order to make the objectives, technical solutions and advantages of the present invention clearer, the present invention will be further described in detail below with reference to the embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention, but not to limit the present invention.
实施例1Example 1
本实施例提供一种双波导耦合式的等离子电光调制器，连接于片上光网络，如图1，所述双波导耦合式的等离子电光调制器包括SiO2基，SiO2基上刻蚀三条波导参数一致的Si波导，外侧的Si波导用于输入激光，另外一侧的Si波导用于传输调制好的激光信号并连接片上光网络；位于中间的Si波导的上方沉积有第一HfO2层、ITO层、第二HfO2层及导体层；所述导体层施加阳极电压，位于SiO2基上方的Si波导面用于施加阴极电压。This embodiment provides a dual-waveguide-coupled plasma electro-optic modulator, which is connected to an on-chip optical network, as shown in FIG. 1 , the dual-waveguide-coupled plasma electro-optic modulator includes a SiO2 base, and three waveguides etched on the SiO2 base have the same parameters The Si waveguide on the outside is used for inputting laser light, and the Si waveguide on the other side is used to transmit the modulated laser signal and connect the on-chip optical network; the Si waveguide in the middle is deposited with the first HfO2 layer, ITO layer, The second HfO2 layer and the conductor layer; the conductor layer is applied with anode voltage, and the Si waveguide surface above the SiO2 base is used for application of cathode voltage.
具体地，所述Si波导为脊型Si波导。Specifically, the Si waveguide is a ridge-type Si waveguide.
鉴于施加阳极时用更加的导电性能材料更好，优选地，所述导体层为Au层。Considering that it is better to use more conductive materials when applying the anode, preferably, the conductor layer is an Au layer.
优选地，所述脊型Si波导的高度为透视谱窗口发生移动的高度。当改变Si光波导高度时，发现透视谱窗口发生移动，可以做成WDM模式以提高通信容量。Preferably, the height of the ridge-type Si waveguide is the height at which the see-through spectral window moves. When changing the height of the Si optical waveguide, it is found that the see-through spectral window moves and can be made into a WDM mode to improve the communication capacity.
本实施例可用于多种偏上光网络，但ORNoC拓扑结构的片上光网络最为适合。This embodiment can be used for a variety of on-chip optical networks, but the on-chip optical network with ORNoC topology is the most suitable.
具体地，沉积采用常见的喷溅工艺方法。Specifically, the deposition adopts a common sputtering process method.
本实施例通过对Au层施加阳极电压，通过电场控制ITO薄膜的介电常数以改变其折射率来控制波导之间的光场耦合，实现电学信号控制光学信号的目的。In this embodiment, an anode voltage is applied to the Au layer, and the dielectric constant of the ITO film is controlled by an electric field to change its refractive index to control the optical field coupling between the waveguides, so as to achieve the purpose of controlling the optical signal by an electrical signal.
本实施例中的三条Si波导的波导参数还可以基本一致，但在长度上进行变化。外边较短的一条Si波导用于输入一定波长的激光，另外一边较长的Si波导一条用于传输调制好的激光信号。The waveguide parameters of the three Si waveguides in this embodiment may be basically the same, but vary in length. A short Si waveguide on the outside is used to input a laser of a certain wavelength, and a longer Si waveguide on the other side is used to transmit a modulated laser signal.
详细地，如图1、图2、图3所述脊型Si波导的宽度Wg＝400nm，相邻Si波导之间的间距Wgap＝150nm，位于两侧的两条脊型Si波导的波导高度Hg＝180nm，位于中间的脊型Si波导高度Hig＝180nm，第一HfO2层的厚度Hig＝15nm、ITO层厚度HHfO＝20nm、第二HfO2层厚度Hig＝15nm、Au层厚度HAu＝500nm及脊型Si波导长度Lcoupling＝8500nm；所述双波导耦合式的等离子电光调制器的工作波长为1400nm-1600nm。In detail, as shown in Fig. 1, Fig. 2, Fig. 3, the width of the ridge-type Si waveguides is Wg=400nm, the distance between adjacent Si waveguides is Wgap=150nm, and the waveguide height Hg of the two ridge-type Si waveguides located on both sides =180nm, the height of the ridge-type Si waveguide in the middle is Hig=180nm, the thickness of the first HfO2 layer is Hig=15nm, the thickness of the ITO layer is HHfO=20nm, the thickness of the second HfO2 layer is Hig=15nm, the thickness of the Au layer is HAu=500nm and the ridge type The Si waveguide length Lcoupling=8500nm; the operating wavelength of the double-waveguide coupled plasma electro-optic modulator is 1400nm-1600nm.
通过FDTD Solutions仿真软件对电控光场进行仿真，在发送端的波导表面激发amplitude为1的TM波，波长范围为1400-1600nm，分别在ON和OFF状态下观察到电场的分布图如图4、5所示，图4为OFF状态在环形波导上几乎没有观测到有电场分布，图5为ON状态在环形波导上观测到有较强的电场分布。The electronically controlled optical field is simulated by FDTD Solutions simulation software. The TM wave with an amplitude of 1 is excited on the surface of the waveguide at the transmitting end, and the wavelength range is 1400-1600 nm. The distribution of the electric field is observed in the ON and OFF states respectively as shown in Figure 4, As shown in Fig. 5, Fig. 4 shows that there is almost no electric field distribution on the ring waveguide in the OFF state, and Fig. 5 shows that there is a strong electric field distribution on the ring waveguide in the ON state.
图7为施加电压状态即OFF状态，图8为未施加电压状态即ON状态。如图9光源为1400-1600nm波长各个状态的透射谱示意图所示，图中三条曲线分别为1400-1600nm波长的输入功率谱、ON状态输出功率谱和OFF状态功率谱，从透射谱可以明显发现不同波长的透射率尽不相同且呈周期性变化。从绿色曲线可明显发现在OFF状态时，光信号几乎不能通过。FIG. 7 is an OFF state in a state where a voltage is applied, and FIG. 8 is an ON state in a state where no voltage is applied. As shown in Figure 9, the light source is a schematic diagram of the transmission spectrum of each state with a wavelength of 1400-1600 nm. The three curves in the figure are the input power spectrum, the output power spectrum of the ON state and the power spectrum of the OFF state respectively at the wavelength of 1400-1600 nm. It can be clearly found from the transmission spectrum. The transmittance of different wavelengths is different and varies periodically. It is obvious from the green curve that in the OFF state, the light signal hardly passes through.
根据插入损耗公式通过仿真和数据分析，如图10所示，图中曲线为1400-1600nm波长的插入损耗曲线，在1450-1555nm之间有低透窗口。根据消光比定义公式：According to the insertion loss formula Through simulation and data analysis, as shown in Figure 10, the curve in the figure is the insertion loss curve of the wavelength of 1400-1600nm, and there is a low transmission window between 1450-1555nm. The formula is defined according to the extinction ratio:
上式中，Poff为“OFF”状态时环形波导中的光信号强度，而Pon为“ON”状态时环形波导中的光信号强度。我们将1400-1600nm波段的功率进行测量，并绘制成如图10所示的曲线。在各个波段其消光比是不同的，经计算，如图11，平均消光比为-11.07dB，在1550nm波长的消光比为-14.1dB。In the above formula, Poff is the optical signal intensity in the ring waveguide in the "OFF" state, and Pon is the optical signal intensity in the ring waveguide in the "ON" state. We measured the power in the 1400-1600nm band and plotted the curve as shown in Figure 10. The extinction ratio is different in each wavelength band. After calculation, as shown in Figure 11, the average extinction ratio is -11.07dB, and the extinction ratio at the wavelength of 1550nm is -14.1dB.
我们通过改变不同波导高度，发现透射谱窗口发生了移动，如图12所示，当波导高度分别为160、180、200时，三个透射中心分别为1540、1546、1554nm波长处。By changing the height of different waveguides, we found that the transmission spectral window has shifted. As shown in Figure 12, when the waveguide heights are 160, 180, and 200, the three transmission centers are at 1540, 1546, and 1554 nm, respectively.
COMS结构结开关速率可用如下公式表示：The junction switching rate of the CMOS structure can be expressed by the following formula:
τ＝RC；τ=RC;
上式中接触电阻R＝500Ω，由电容定义公式：In the above formula, the contact resistance R=500Ω, which is defined by the capacitance formula:
计算出：Calculate:
上式中，ε0＝8.85×10-12F/m，d为ITO加上双层HfO2的厚度，S为电容结面积，即S＝Lcoupling*Wig，代入数据可计算得，τ＝1.0359×10-12S，充电时间为1.0359ps。每充电放电一次才能完成1bit传输，那么完成1bit传输需要的时间为2τ＝2.0718ps，传输速率为：In the above formula, ε0 =8.85×10-12 F/m, d is the thickness of ITO plus double-layer HfO2 , S is the capacitor junction area, that is, S=Lcoupling *Wig , which can be calculated by substituting the data, τ =1.0359×10-12 S, and the charging time is 1.0359ps. 1bit transmission can only be completed after each charge and discharge, then the time required to complete 1bit transmission is 2τ=2.0718ps, and the transmission rate is:
传输1bit需要消耗的功耗可通过电容充电能量大小(放电不需要消耗能量)来计算，The power consumption required to transmit 1 bit can be calculated by the amount of capacitor charging energy (discharge does not require energy consumption),
计算可得电容容量因此E＝5.7211×10-15J，那么，传输1bit需要消耗的功耗为5.7211fJ。Calculate the available capacitance Therefore, E=5.7211×10-15 J, then, the power consumption required to transmit 1 bit is 5.7211fJ.
根据香农定理计算通信容量。According to Shannon's theorem Calculate the communication capacity.
其中j＝3，B＝0.4827THz，经计算得AverageC＝0.4827THz*1.4856＝0.7171Tbits/S，三个通道复用，可得三个通道WDM的总香农通信容量为ShannonCapacity＝2.1513Tbits/S。Where j=3, B=0.4827THz, AverageC=0.4827THz*1.4856=0.7171Tbits/S after calculation, three channels are multiplexed, and the total Shannon communication capacity of the three-channel WDM can be obtained as ShannonCapacity=2.1513Tbits/S.
表1对上述的参数进行总结，然后将近年来各学者的研究成果参数进行对比，对比发现，我们提出的电光调制器参数性能：消光比、能耗、调制速率、尺寸、控制电压均优于大部分其他学者提出的同类电光调制器参数。Table 1 summarizes the above parameters, and then compares the parameters of the research results of various scholars in recent years. The comparison shows that the parameter performance of our proposed electro-optic modulator: extinction ratio, energy consumption, modulation rate, size, and control voltage are all better than large Parameters of similar electro-optic modulators proposed by some other scholars.
表1Table 1
尽管上面对本发明说明性的具体实施方式进行了描述，以便于本技术领域的技术人员能够理解本发明，但是本发明不仅限于具体实施方式的范围，对本技术领域的普通技术人员而言，只要各种变化只要在所附的权利要求限定和确定的本发明精神和范围内，一切利用本发明构思的发明创造均在保护之列。Although the illustrative specific embodiments of the present invention are described above so that those skilled in the art can understand the present invention, the present invention is not limited to the scope of the specific embodiments. As long as such changes fall within the spirit and scope of the present invention as defined and determined by the appended claims, all inventions and creations utilizing the inventive concept are included in the protection list.
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| CN201910720052.9ACN110456528A (en) | 2019-08-06 | 2019-08-06 | A Dual Waveguide Coupled Plasma Electro-Optical Modulator |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111106191A (en)* | 2020-01-06 | 2020-05-05 | 电子科技大学 | 20GHz travelling wave optical waveguide detector |
| CN111240051A (en)* | 2020-03-06 | 2020-06-05 | 桂林电子科技大学 | Directional coupling type electro-optical modulator based on surface plasma |
| CN113300965A (en)* | 2021-05-17 | 2021-08-24 | 桂林航天工业学院 | Cellular router for network-on-chip interconnection |
| CN115826284A (en)* | 2022-09-20 | 2023-03-21 | 京东方科技集团股份有限公司 | Reflective display panel and display device |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102124583A (en)* | 2008-06-26 | 2011-07-13 | 3M创新有限公司 | Semiconductor light converting construction |
| CN103777377A (en)* | 2012-10-23 | 2014-05-07 | 三菱电机株式会社 | Semiconductor optical modulator |
| US20150234138A1 (en)* | 2014-02-18 | 2015-08-20 | The George Washington University | Silicon-based, broadband, waveguide-integrated electro-optical switch |
| CN109001918A (en)* | 2018-07-13 | 2018-12-14 | 电子科技大学 | A kind of low-loss optically waveguide phase shifter based on high mobility TCO thin film |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102124583A (en)* | 2008-06-26 | 2011-07-13 | 3M创新有限公司 | Semiconductor light converting construction |
| CN103777377A (en)* | 2012-10-23 | 2014-05-07 | 三菱电机株式会社 | Semiconductor optical modulator |
| US20150234138A1 (en)* | 2014-02-18 | 2015-08-20 | The George Washington University | Silicon-based, broadband, waveguide-integrated electro-optical switch |
| CN109001918A (en)* | 2018-07-13 | 2018-12-14 | 电子科技大学 | A kind of low-loss optically waveguide phase shifter based on high mobility TCO thin film |
| Title |
|---|
| 周希朗, 东南大学出版社* |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111106191A (en)* | 2020-01-06 | 2020-05-05 | 电子科技大学 | 20GHz travelling wave optical waveguide detector |
| CN111106191B (en)* | 2020-01-06 | 2021-09-28 | 电子科技大学 | 20GHz travelling wave optical waveguide detector |
| CN111240051A (en)* | 2020-03-06 | 2020-06-05 | 桂林电子科技大学 | Directional coupling type electro-optical modulator based on surface plasma |
| CN113300965A (en)* | 2021-05-17 | 2021-08-24 | 桂林航天工业学院 | Cellular router for network-on-chip interconnection |
| CN115826284A (en)* | 2022-09-20 | 2023-03-21 | 京东方科技集团股份有限公司 | Reflective display panel and display device |
| CN115826284B (en)* | 2022-09-20 | 2024-06-04 | 京东方科技集团股份有限公司 | Reflective display panel and display device |
| Publication | Publication Date | Title |
|---|---|---|
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