技术领域technical field
本发明涉及一种碳化硅高温压力传感器封装结构，属于高温传感器设计与制造技术领域。The invention relates to a packaging structure of a silicon carbide high-temperature pressure sensor, belonging to the technical field of high-temperature sensor design and manufacture.
背景技术Background technique
碳化硅因其化学性质稳定、热膨胀系数小，常作为应用于高温恶劣条件下的半导体材料。Silicon carbide is often used as a semiconductor material under high temperature and harsh conditions due to its stable chemical properties and small thermal expansion coefficient.
相关研究成果证明碳化硅电子器件不需要冷却可直接工作在600℃环境中。但碳化硅器件的应用受外部封装结构的影响，耐用可靠的封装结构可保证碳化硅器件在高温下发挥其特有的作用。Relevant research results prove that silicon carbide electronic devices can work directly in a 600°C environment without cooling. However, the application of silicon carbide devices is affected by the external packaging structure, and the durable and reliable packaging structure can ensure that silicon carbide devices play their unique roles at high temperatures.
碳化硅高温压力传感器的传感机理基于半导体电阻的形变，电阻制作在利用微机械加工的悬空薄膜上，形变由薄膜上下的压力差产生，因此器件对于作用在薄膜上的外力非常敏感。碳化硅芯片与基底通过键合或者粘合的方式封接在一起，基底上的腔室为芯片敏感薄膜提供变形的空间。碳化硅器件高温工作时主要受热机械应力的影响，由芯片粘合结构中的芯片材料(如碳化硅)、基底材料与粘合材料的热膨胀系数不匹配而引起，热应力可能会导致传感器在热环境下产生热温度漂移，影响传感器的精度，在极端情况下，还会对芯片粘合结构造成永久的机械损伤。因此，在高温条件下，碳化硅器件封装结构需有良好的耐高温性能、相互匹配的热膨胀系数、化学性质稳定的封装材料，除此之外，还要能够实现耐高温电气互连，保证足够的封装强度和良好的气密性。The sensing mechanism of the silicon carbide high-temperature pressure sensor is based on the deformation of the semiconductor resistor. The resistor is fabricated on a suspended film processed by micromachining. The deformation is generated by the pressure difference between the top and bottom of the film, so the device is very sensitive to the external force acting on the film. The silicon carbide chip and the substrate are sealed together by bonding or bonding, and the cavity on the substrate provides a deformation space for the sensitive film of the chip. Silicon carbide devices are mainly affected by thermomechanical stress when they work at high temperatures, which is caused by the mismatch of the thermal expansion coefficients of the chip material (such as silicon carbide), substrate material, and adhesive material in the chip bonding structure. Thermal temperature drift in the environment can affect the accuracy of the sensor and, in extreme cases, cause permanent mechanical damage to the die-bonding structure. Therefore, under high temperature conditions, the silicon carbide device packaging structure needs to have good high temperature resistance, matching thermal expansion coefficient, and chemically stable packaging materials. In addition, it must be able to achieve high temperature resistant electrical interconnection to ensure sufficient Excellent packaging strength and good airtightness.
国外相关研究采用芯片直接粘合技术(direct chip attachment，DCA)。封装基体材料选择氮化铝，引线选择铂线，粘接材料选择高温熔封玻璃。在这种形式的封装中，不再使用引线键合引出信号，而是将铂丝固定直接与芯片上的金属层相接触，避免了引线键合中触点失效的问题。另外，传感器C型敏感膜的背面与高温介质接触，保护敏感压阻、欧姆接触等不直接承受高温介质的冲击，能有效提高传感器寿命。DCA封装技术能够解决耐高温引线互连的难题，但是高温传感器封装气密性问题仍未得到很好的解决。因为大多数高温密封胶无法承受高温，因而对封装中的耐高温性能、封装强度以及气密性提出了挑战。由于碳化硅以及氮化铝材料具有很强的化学惰性，通常的玻璃粉与碳化硅以及氮化铝的浸润性不好，难以实现高强度的封装。同时由于两种材料较低的热膨胀系数，因而限制了玻璃粉的选择，通常玻璃粉的热膨胀系数越低则烧结温度越高，大多数与碳化硅以及氮化铝热膨胀系数接近的玻璃粉，其烧结温度多在800～1200℃左右，过高的烧结温度会导致碳化硅芯片在封装中的失效。Foreign related research adopts direct chip attachment (DCA). Aluminum nitride is selected as the packaging base material, platinum wire is selected as the lead wire, and high-temperature fusing glass is selected as the bonding material. In this form of packaging, wire bonding is no longer used to lead out signals, but the platinum wire is fixed directly in contact with the metal layer on the chip, which avoids the problem of contact failure in wire bonding. In addition, the back of the C-type sensitive film of the sensor is in contact with the high-temperature medium to protect the sensitive piezoresistive and ohmic contacts from directly bearing the impact of the high-temperature medium, which can effectively improve the service life of the sensor. DCA packaging technology can solve the problem of high temperature resistant lead interconnection, but the problem of airtightness of high temperature sensor packaging has not been well resolved. Because most high-temperature sealants cannot withstand high temperatures, it poses challenges for high-temperature performance, package strength, and hermeticity in packages. Due to the strong chemical inertness of silicon carbide and aluminum nitride materials, the wettability of ordinary glass powder with silicon carbide and aluminum nitride is not good, and it is difficult to achieve high-strength packaging. At the same time, due to the low thermal expansion coefficient of the two materials, the choice of glass powder is limited. Generally, the lower the thermal expansion coefficient of glass powder is, the higher the sintering temperature is. Most of the glass powders with thermal expansion coefficients close to silicon carbide and aluminum nitride, the The sintering temperature is mostly around 800-1200°C. Excessively high sintering temperature will lead to failure of the silicon carbide chip in the package.
发明内容Contents of the invention
本发明的主要目的在于克服现有DCA封装技术在耐高温、气密性方面的不足和缺陷,提出一种碳化硅高温压力传感器的低封装应力、耐高温、气密性及有稳定电气性能封装结构。The main purpose of the present invention is to overcome the deficiencies and defects of the existing DCA packaging technology in terms of high temperature resistance and air tightness, and propose a silicon carbide high temperature pressure sensor with low packaging stress, high temperature resistance, air tightness and stable electrical performance packaging structure.
本发明采用技术方案如下：The present invention adopts technical scheme as follows:
一种碳化硅高温压力传感器封装结构，其特征在于，所述封装结构包括三级封装，第一级封装包括碳化硅芯片、耐高温陶瓷基座和耐高温导线；基座与芯片连接处通过玻璃粉进行烧结；芯片与导线连接处通过导电浆料烧结；第二级封装包括第一级整体封装、耐高温衬套和耐高温金属外壳；基座与衬套连接处通过金属化焊接方式封装，衬套与外壳连接处通过激光焊接的方式封装；第三级封装包括第二级整体封装、紧定螺钉、尾盖、顶盖、温度传感器、玻璃纤维管以及温度传感器与尾盖连接处。A silicon carbide high-temperature pressure sensor packaging structure, characterized in that the packaging structure includes three-level packaging, the first-level packaging includes a silicon carbide chip, a high-temperature-resistant ceramic base and a high-temperature-resistant wire; the connection between the base and the chip is passed through a glass The connection between the chip and the wire is sintered with conductive paste; the second-level package includes the first-level overall package, high-temperature resistant bushing and high-temperature-resistant metal shell; the connection between the base and the bushing is packaged by metallization welding, The connection between the bushing and the shell is packaged by laser welding; the third-level package includes the second-level overall package, set screws, tail cover, top cover, temperature sensor, glass fiber tube, and the connection between the temperature sensor and the tail cover.
优选地，所述玻璃粉的热膨胀系数为3.0×10-6/℃至5.2×10-6/℃，耐高温至少为400℃，烧结温度为450℃至1000℃。Preferably, the thermal expansion coefficient of the glass powder is 3.0×10-6 /°C to 5.2×10-6 /°C, the high temperature resistance is at least 400°C, and the sintering temperature is 450°C to 1000°C.
优选地，所述导电浆料的耐高温至少为400℃，烧结温度为450℃至1000℃。Preferably, the high temperature resistance of the conductive paste is at least 400°C, and the sintering temperature is 450°C to 1000°C.
优选地，耐高温衬套采用热膨胀系数为4.0×10-6/℃至8.0×10-6/℃的材料；更优选地，耐高温衬套采用可伐合金材料。Preferably, the high temperature resistant bush is made of a material with a thermal expansion coefficient of 4.0×10-6 /°C to 8.0×10-6 /°C; more preferably, the high temperature resistant bush is made of Kovar alloy.
本发明所述的基座-衬套连接处的金属化焊接采用银或银铜合金为焊料。本发明所述的耐高温金属外壳采用可伐合金或不锈钢材料。所述温度传感器与尾盖连接处采用高温无机胶进行固定。The metallization soldering of the base-bushing connection in the present invention uses silver or silver-copper alloy as solder. The high temperature resistant metal shell of the present invention is made of Kovar alloy or stainless steel. The connection between the temperature sensor and the tail cover is fixed with high-temperature inorganic glue.
本发明所述的耐高温陶瓷基座采用氮化铝材料。The high temperature resistant ceramic base of the present invention adopts aluminum nitride material.
本发明具有以下优点及突出效果：①本发明优选封装材料并采用独特的多级封装结构及连接方式，其中碳化硅芯片与耐高温基座、基座与耐高温衬套、衬套与耐高温金属外壳之间的连接方式分别为玻璃粉烧结、金属化焊接及激光焊接，可实现碳化硅压力传感器低热应力、耐高温的气密性封装。②本发明芯片电极与导线之间选取导电浆料烧结的引线互连方式，具有良好的耐高温、耐腐蚀及稳定的电气性能。The present invention has the following advantages and outstanding effects: ① The present invention optimizes the packaging material and adopts a unique multi-level packaging structure and connection method, wherein the silicon carbide chip and the high temperature resistant base, the base and the high temperature resistant bushing, the bushing and the high temperature resistant The connection methods between the metal shells are glass powder sintering, metallization welding and laser welding, which can realize the airtight packaging of silicon carbide pressure sensor with low thermal stress and high temperature resistance. ② The lead wire interconnection mode of the chip electrode and the wire is selected to be sintered with conductive paste, which has good high temperature resistance, corrosion resistance and stable electrical performance.
附图说明Description of drawings
图1是本发明一种碳化硅高温压力传感器封装结构的示意图。Fig. 1 is a schematic diagram of a packaging structure of a silicon carbide high-temperature pressure sensor according to the present invention.
图2是本发明一种碳化硅高温压力传感器封装结构的三维零部件爆炸示意图。Fig. 2 is a three-dimensional exploded schematic view of a package structure of a silicon carbide high-temperature pressure sensor according to the present invention.
图3是本发明一种碳化硅高温压力传感器封装结构的基座结构图。Fig. 3 is a structural diagram of a base of a silicon carbide high-temperature pressure sensor packaging structure according to the present invention.
图4是本发明一种碳化硅高温压力传感器封装结构的尾盖结构图。Fig. 4 is a structure diagram of a tail cover of a silicon carbide high temperature pressure sensor packaging structure according to the present invention.
图中：11-碳化硅芯片；12-耐高温陶瓷基座；13-基座与芯片连接处；14-芯片与导线连接处；15-耐高温导线；21-第1级整体封装；22-耐高温衬套；23-耐高温金属外壳；24-基座与衬套连接处；25-衬套与外壳连接处；31-第2级整体封装；32-紧定螺钉；33-尾盖；34-顶盖；35-温度传感器；36-玻璃纤维管；37-温度传感器与尾盖连接处；121-芯片槽；122-参考压力腔；123-引压孔；124-导线孔；125-温度传感器盲孔；331-尾盖导线孔；332-尾盖温度传感器孔；333-紧定螺钉孔。In the figure: 11-silicon carbide chip; 12-high temperature resistant ceramic base; 13-connection between base and chip; 14-connection between chip and wire; 15-high temperature resistant wire; 21-level 1 overall packaging; 22- High temperature resistant bushing; 23-high temperature resistant metal shell; 24-joint between base and bushing; 25-junction between bushing and shell; 31-level 2 overall package; 32-set screw; 33-tail cap; 34-top cover; 35-temperature sensor; 36-glass fiber tube; 37-connection between temperature sensor and tail cover; 121-chip slot; 122-reference pressure chamber; Temperature sensor blind hole; 331-tail cover wire hole; 332-tail cover temperature sensor hole; 333-set screw hole.
具体实施方式Detailed ways
下面结合附图和具体实施例对本发明的结构和实施方式做详细说明。The structure and implementation of the present invention will be described in detail below in conjunction with the drawings and specific embodiments.
图1是本发明总体封装结构示意图，整体封装结构分为三级封装结构，其三维零部件爆炸示意图如图2所示。Fig. 1 is a schematic diagram of the overall packaging structure of the present invention, the overall packaging structure is divided into three-level packaging structure, and its three-dimensional component explosion schematic diagram is shown in Fig. 2 .
第一级封装主要实现对碳化硅芯片11的耐高温、气密性封装和碳化硅芯片11与耐高温导线15的稳定电连接。第一级封装包括碳化硅芯片11、耐高温陶瓷基座12以及耐高温导线15三个零部件。因氮化铝材料的热膨胀特性与碳化硅相近，且具有良好的耐高温性与绝缘性，所以耐高温陶瓷基座12选用氮化铝材料。耐高温陶瓷基座12包括其内部的芯片槽121、参考压力腔122、引压孔123、导线孔124及温度传感器盲孔125，由超声机械加工得到，其结构如图3所示。基座与芯片连接处13通过特殊选择的玻璃粉进行烧结实现密封。为实现芯片与基座的耐高温、气密性连接，在选择玻璃粉时，需考虑芯片与基座的热变形特性，选择的玻璃粉的热膨胀系数在3.0×10-6/℃～5.2×10-6/℃之间，且与碳化硅及基座陶瓷材料均有较好的浸润性。另外，选择的玻璃粉在烧结后最高可承受温度应高于碳化硅高温压力传感器的最高工作温度，其烧结温度在需低于碳化硅芯片最高可承受温度。即选择的玻璃粉耐高温400℃及以上，烧结温度在450℃～1000℃之间。芯片与导线连接处14通过特殊选择的导电浆料进行烧结连接。选择的导电浆料烧结后最高可承受温度应高于在碳化硅高温压力传感器最高工作温度，其烧结温度应低于在碳化硅芯片最高可承受温度。即选择的导电浆料耐高温400℃及以上，烧结温度在450～1000℃之间。The first-level packaging mainly realizes the high temperature resistant and airtight packaging of the silicon carbide chip 11 and the stable electrical connection between the silicon carbide chip 11 and the high temperature resistant wire 15 . The first-level packaging includes three parts: a silicon carbide chip 11 , a high-temperature-resistant ceramic base 12 and a high-temperature-resistant wire 15 . Since the thermal expansion characteristic of the aluminum nitride material is similar to that of silicon carbide, and has good high temperature resistance and insulation properties, the high temperature resistant ceramic base 12 is made of aluminum nitride material. The high temperature resistant ceramic base 12 includes a chip groove 121, a reference pressure chamber 122, a pressure introduction hole 123, a wire hole 124 and a temperature sensor blind hole 125, which are obtained by ultrasonic machining, and its structure is shown in FIG. 3 . The junction 13 between the base and the chip is sintered with specially selected glass frit to achieve sealing. In order to realize the high temperature resistance and airtight connection between the chip and the base, when selecting the glassfrit , the thermal deformation characteristics of the chip and the base should be considered. 10-6 /℃, and has good wettability with silicon carbide and base ceramic materials. In addition, the maximum tolerable temperature of the selected glass powder after sintering should be higher than the maximum working temperature of the silicon carbide high-temperature pressure sensor, and its sintering temperature must be lower than the maximum tolerable temperature of the silicon carbide chip. That is, the selected glass frit can withstand high temperature of 400°C and above, and the sintering temperature is between 450°C and 1000°C. The joint 14 between the chip and the wire is sintered and connected through a specially selected conductive paste. The maximum tolerable temperature of the selected conductive paste after sintering should be higher than the maximum working temperature of the silicon carbide high-temperature pressure sensor, and its sintering temperature should be lower than the maximum tolerable temperature of the silicon carbide chip. That is, the selected conductive paste has a high temperature resistance of 400°C and above, and the sintering temperature is between 450°C and 1000°C.
第二级封装主要实现第一级整体封装21的进一步耐高温、气密性封装。第二级封装主要包括第一级整体封装21、耐高温衬套22以及耐高温金属外壳23。在第一级整体封装21与耐高温金属外壳23间增加耐高温衬套22，其热膨胀系数在陶瓷基座材料与外壳材料之间，可保证碳化硅压力传感器的高温气密性。因此，耐高温衬套22材料热膨胀系数范围一般在4.0×10-6/℃至8.0×10-6/℃之间，耐高温衬套22优选采用可伐合金材料；耐高温金属外壳23材料优选为可伐合金或不锈钢材料。其中耐高温衬套22与外壳连接处25通过金属化焊接的方式实现密封。耐高温陶瓷基座的金属化材料为银，第一级整体封装21与耐高温衬套22的金属化焊接焊料为银或银铜合金。基座与衬套连接处24通过激光焊接的方式实现密封。The second-level packaging mainly realizes further high-temperature-resistant and air-tight packaging of the first-level overall packaging 21 . The second-level package mainly includes the first-level overall package 21 , a high-temperature-resistant bushing 22 and a high-temperature-resistant metal shell 23 . A high-temperature-resistant bushing 22 is added between the first-level overall package 21 and the high-temperature-resistant metal shell 23, and its thermal expansion coefficient is between the ceramic base material and the shell material, which can ensure the high-temperature airtightness of the silicon carbide pressure sensor. Therefore, the thermal expansion coefficient of the high temperature resistant bush 22 is generally in the range of 4.0×10-6 /°C to 8.0×10-6 /°C, and the high temperature resistant bush 22 is preferably made of Kovar alloy; the high temperature resistant metal shell 23 is preferably made of For Kovar alloy or stainless steel material. Wherein, the joint 25 between the high temperature resistant bushing 22 and the shell is sealed by means of metallization welding. The metallization material of the high-temperature-resistant ceramic base is silver, and the metallization welding solder of the first-level overall package 21 and the high-temperature-resistant bushing 22 is silver or silver-copper alloy. The joint 24 between the base and the bushing is sealed by laser welding.
第三级封装主要实现温度传感器35的封装、耐高温金属导线15的绝缘封装以及碳化硅芯片11的保护。第三级封装包括第二级整体封装31、尾盖33、紧定螺钉32、顶盖34、温度传感器35以及玻璃纤维管36。其中温度传感器35的探头插入耐高温陶瓷基座12的温度传感器盲孔125中，温度传感器盲孔125以及芯片槽121在耐高温陶瓷基座12上设计并加工成偏心的位置，能够最大程度上利用空间，使得封装结构最为紧凑，探头所处的位置离碳化硅芯片较近，可以较为准确的测量碳化硅芯片处的温度情况。图4给出尾盖33的结构图，温度传感器35的尾部通过尾盖33的尾盖温度传感器孔332伸出，并在温度传感器与尾盖连接处37使用高温无机胶进行固定。耐高温导线15由玻璃纤维管36进行绝缘保护，并经由尾盖33上的尾盖导线孔331进行固定和引出。尾盖33与耐高温金属外壳23通过紧定螺钉32固定。顶盖34与耐高温金属外壳23之间通过激光焊接进行封装，顶盖34上加工有通孔，可实现测量介质的引入，并对碳化硅芯片11进行保护。The third-level packaging mainly implements the packaging of the temperature sensor 35 , the insulation packaging of the high-temperature-resistant metal wire 15 and the protection of the silicon carbide chip 11 . The third-level package includes the second-level overall package 31 , a tail cover 33 , set screws 32 , a top cover 34 , a temperature sensor 35 and a glass fiber tube 36 . Wherein the probe of the temperature sensor 35 is inserted in the temperature sensor blind hole 125 of the high temperature resistant ceramic base 12, the temperature sensor blind hole 125 and the chip groove 121 are designed and processed into an eccentric position on the high temperature resistant ceramic base 12, which can maximize The space is used to make the packaging structure the most compact, and the position of the probe is closer to the silicon carbide chip, so that the temperature at the silicon carbide chip can be measured more accurately. Fig. 4 shows the structural diagram of the tail cover 33, the tail of the temperature sensor 35 protrudes through the tail cover temperature sensor hole 332 of the tail cover 33, and uses high temperature inorganic glue to fix the junction 37 between the temperature sensor and the tail cover. The high temperature resistant wire 15 is insulated and protected by the glass fiber tube 36 , and is fixed and led out through the tail cap wire hole 331 on the tail cap 33 . The tail cover 33 and the high temperature resistant metal shell 23 are fixed by set screws 32 . The top cover 34 and the high temperature resistant metal shell 23 are packaged by laser welding, and the top cover 34 is processed with a through hole, which can realize the introduction of the measurement medium and protect the silicon carbide chip 11 .
| Application Number | Priority Date | Filing Date | Title |
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| CN201910619948.8ACN110455456A (en) | 2019-07-10 | 2019-07-10 | Packaging structure of a silicon carbide high temperature pressure sensor |
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| CN201910619948.8ACN110455456A (en) | 2019-07-10 | 2019-07-10 | Packaging structure of a silicon carbide high temperature pressure sensor |
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| CN201910619948.8APendingCN110455456A (en) | 2019-07-10 | 2019-07-10 | Packaging structure of a silicon carbide high temperature pressure sensor |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112875637A (en)* | 2021-04-07 | 2021-06-01 | 中国电子科技集团公司第四十九研究所 | High-temperature-resistant pressure sensor and manufacturing method thereof |
| CN114216519A (en)* | 2022-02-21 | 2022-03-22 | 深圳安培龙科技股份有限公司 | Temperature and pressure integrated sensor packaging structure |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103487176A (en)* | 2013-09-24 | 2014-01-01 | 中国科学院微电子研究所 | Packaging structure and method of pressure sensor |
| CN106134489B (en)* | 2012-12-26 | 2014-10-22 | 北京遥测技术研究所 | A kind of high-temp pressure sensor encapsulating structure |
| CN105043643A (en)* | 2015-04-23 | 2015-11-11 | 昆山泰莱宏成传感技术有限公司 | High-temperature pressure sensor and manufacturing method thereof |
| US9337354B2 (en)* | 2013-03-04 | 2016-05-10 | Unisem (M) Berhad | Top port MEMS cavity package and method of manufacture thereof |
| CN109781334A (en)* | 2019-01-02 | 2019-05-21 | 西安交通大学 | A leadless packaging structure and packaging method of a piezoresistive sensor |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106134489B (en)* | 2012-12-26 | 2014-10-22 | 北京遥测技术研究所 | A kind of high-temp pressure sensor encapsulating structure |
| US9337354B2 (en)* | 2013-03-04 | 2016-05-10 | Unisem (M) Berhad | Top port MEMS cavity package and method of manufacture thereof |
| CN103487176A (en)* | 2013-09-24 | 2014-01-01 | 中国科学院微电子研究所 | Packaging structure and method of pressure sensor |
| CN105043643A (en)* | 2015-04-23 | 2015-11-11 | 昆山泰莱宏成传感技术有限公司 | High-temperature pressure sensor and manufacturing method thereof |
| CN109781334A (en)* | 2019-01-02 | 2019-05-21 | 西安交通大学 | A leadless packaging structure and packaging method of a piezoresistive sensor |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112875637A (en)* | 2021-04-07 | 2021-06-01 | 中国电子科技集团公司第四十九研究所 | High-temperature-resistant pressure sensor and manufacturing method thereof |
| CN112875637B (en)* | 2021-04-07 | 2024-03-12 | 中国电子科技集团公司第四十九研究所 | High-temperature-resistant pressure sensor and manufacturing method thereof |
| CN114216519A (en)* | 2022-02-21 | 2022-03-22 | 深圳安培龙科技股份有限公司 | Temperature and pressure integrated sensor packaging structure |
| CN114216519B (en)* | 2022-02-21 | 2022-05-10 | 深圳安培龙科技股份有限公司 | Temperature and pressure integrated sensor packaging structure |
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| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
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| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication | Application publication date:20191115 |