Summary of the invention
The object of the present invention is to provide a kind of array substrates, can effectively improve penetrating for liquid crystal display deviceRate, and reduce response time and power consumption.
Another object of the present invention is to provide a kind of production method of array substrate, the array made by this methodSubstrate can effectively improve penetrance, and reduce response time and power consumption.
It is a further object of the present invention to provide a kind of liquid crystal display devices, can effectively improve penetrance, and dropLow-response time and power consumption.
It is that it is realized by adopting the following technical scheme that the present invention, which solves its technical problem,.
A kind of array substrate, including first substrate, the array substrate have viewing area；The viewing area is equipped with multi-strip scanningLine, multiple data lines and intersect the multiple pixels being arranged in array for limiting and being formed with multiple data lines by multi-strip scanning lineRegion includes first electrode, second electrode in each pixel region and is arranged between the first electrode and the second electrodeProtective layer；The viewing area has open area A and non-open areas, which is provided only on the non-open areas, the protectionLayer is engraved structure in the open area.
Further, array substrate further include: the first metal layer is formed on the first substrate, including the scan lineAnd grid；First insulating layer is formed on the first substrate and covers the first metal layer, which includes being located to be somebody's turn to doThe gate insulating layer of viewing area；Semiconductor layer is formed on the gate insulating layer and is located at the top of the grid；First transparent electricityPole layer, is formed on first insulating layer, including the first electrode；Second metal layer is formed on the first transparency electrode layer,Including source electrode, drain electrode and the data line；The source electrode and the drain electrode are separated and contact respectively with the semiconductor layer, so that partThe semiconductor layer expose between the source electrode and the drain electrode, which connect with the data line, the drain electrode and the first electrodeConnection；Second insulating layer is formed in the second metal layer, which is that whole face is arranged and covers the entire displayArea；Insulating protective layer is formed in the second insulating layer, including the protective layer；Third metal layer is formed in the insulating protective layerOn, including conductive bar, the conductive bar be located at the top of the scan line；And second transparency electrode layer, it is formed in the insulation protectionOn layer, which includes the second electrode positioned at viewing area, which covers the conductive bar.
Further, which further includes third insulating layer, which is formed on the insulating protective layer,Third metal layer and second transparency electrode layer are formed on the third insulating layer.
Further, in the non-open areas, which is to engrave in the open area for third insulating layer settingHollow structure.
Further, array substrate further include: the first metal layer is formed on the first substrate, including the scan lineAnd grid；First insulating layer is formed on the first substrate and covers the first metal layer, which includes being located to be somebody's turn to doThe gate insulating layer of viewing area；Semiconductor layer is formed on the gate insulating layer and is located at the top of the grid；First transparent electricityPole layer, is formed on first insulating layer, including the first electrode；Second metal layer is formed on the first transparency electrode layer,Including source electrode, drain electrode and the data line；The source electrode and the drain electrode are separated and contact respectively with the semiconductor layer, so that partThe semiconductor layer expose between the source electrode and the drain electrode, which connect with the data line, the drain electrode and the first electrodeConnection；Second insulating layer is formed in the second metal layer, which is provided only on the non-open areas, this secondInsulating layer is engraved structure in the open area；Insulating protective layer is formed in the second insulating layer, including the protective layer；TheThree insulating layers are formed on the insulating protective layer；Third metal layer is formed on the third insulating layer, including conductive bar, this is ledElectric item is located at the top of the scan line；And second transparency electrode layer, it is formed on the third insulating layer, the second transparency electrodeLayer includes the second electrode positioned at viewing area, which covers the conductive bar.
Further, which further includes the non-display area around the viewing area, which has first to lead toHole and the second through-hole, wherein the first through hole is for leading the second transparency electrode layer of the non-display area with the first metal layerLogical to realize electrical connection, which is used to be connected the second transparency electrode layer of the non-display area with the second metal layer realNow it is electrically connected.
Further, which includes the first conductive layer positioned at the non-display area；The second metal layer includesPositioned at the second conductive layer of the non-display area；The insulating protective layer includes the peripheral protective layer positioned at the non-display area；This secondTransparent electrode layer includes the third conductive layer positioned at non-display area；First insulating layer and second insulating layer covering entirely shouldFirst substrate；In the first through hole region of the non-display area, including be cascading from lower to upper first conductive layer,First insulating layer, the second insulating layer, the periphery protective layer and the third conductive layer, wherein the first through hole penetrate through thisOne insulating layer, the second insulating layer and the periphery protective layer to expose first conductive layer, the third conductive layer insert this firstIt is electrically connected in through-hole with first conductive layer contact realization；In second via regions of the non-display area, including from lower to upperFirst insulating layer, second conductive layer, the second insulating layer, the periphery protective layer and the third being cascading are conductiveLayer, wherein second through-hole penetrates through the second insulating layer and the periphery protective layer to expose second conductive layer, and the third is conductiveLayer is inserted in second through-hole and is electrically connected with second conductive layer contact realization.
A kind of liquid crystal display device, including above-mentioned array substrate；The liquid crystal display device further includes and the array substrateThe colored optical filtering substrates being oppositely arranged and the liquid crystal layer being arranged between the array substrate and the colored optical filtering substrates, colour filterPhotopolymer substrate includes the second substrate and the color blocking layer and black matrix that are arranged in the second substrate, in the viewing area open region Nei GaifeiDomain corresponds to the pattern of the black matrix.
A kind of production method of array substrate, for making above-mentioned array substrate, comprising: successively shape on the first substrateAt the first metal layer, first insulating layer, the semiconductor layer, the first transparency electrode layer, the second metal layer, this second absolutelyEdge layer and the insulating protective layer；After patterning forms the insulating protective layer, sequentially formed on the insulating protective layer entireThird insulation material layer, entire third metal material layer and entire photoresist layer；Utilize intermediate tone mask plate pairThe photoresist layer is exposed, developing forms patterned photoresist layer, which includes the first photoresist layer, the second photoresist layerAnd the hollowed out area other than the first photoresist layer and the second photoresist layer, the thickness of second photoresist layer are less than first photoresist layerThickness, wherein the first photoresist layer corresponds to the position of the conductive bar, and the corresponding third insulating layer being subsequently formed in the hollowed out area needsThe position to be removed；The third metal material layer that etching removal for the first time is not covered by the photoresist layer；Etching removal is not by thisThe third insulation material layer of photoresist layer covering, the third insulating layer after forming patterning；Etching is removed from the insulation protectionThe second insulating layer that layer exposes；First insulating layer that etching removal is exposed from the second insulating layer；The photoresist layer is carried outEtching, removes second photoresist layer；The third metal layer is formed to second of etching of progress of the third metal material layer；RemovalFirst photoresist layer；And the second transparency electrode layer is formed in the third metal layer.
It further, further include being patterned using optical cover process to the second insulating layer when forming the second insulating layerThe second insulating layer is set to be provided only on the non-open areas, which is engraved structure in the open area.
The invention has the advantages that array substrate of the invention is being opened since protective layer is provided only on non-open areasThen not set protective layer in the domain of mouth region, therefore, the distance between first electrode (pixel electrode) and second electrode (public electrode)Very thin, the distance between first electrode and second electrode are much smaller than conventional design in the prior art in the open area of array substrateDistance, the reduction of the distance between first electrode and second electrode is so that generated electricity between first electrode and second electrodeField intensity is reinforced, and the rotatory power of the liquid crystal molecule under the electric field is reinforced, therefore, can be effective under identical driving voltageGround improves the penetrance of liquid crystal display device, reduces response time and power consumption, has liquid crystal display device more perfect aobviousShow effect.
The above description is only an overview of the technical scheme of the present invention, in order to better understand the technical means of the present invention,And it can be implemented in accordance with the contents of the specification, and in order to allow above-mentioned array substrate of the invention and preparation method thereof, liquid crystalOther purposes, the feature and advantage of display device can be more clearly understood, special below to lift preferred embodiment, and cooperate attached drawing, in detailIt describes in detail bright.
Specific embodiment
It is of the invention to reach the technical means and efficacy that predetermined goal of the invention is taken further to illustrate, below in conjunction withAttached drawing and preferred embodiment, to array substrate proposed according to the present invention and preparation method thereof and with this array substrateSpecific embodiment, structure, feature and its effect of liquid crystal display device, detailed description are as follows:
For the present invention aforementioned and other technology contents, feature and effect, in following cooperation with reference to the preferable implementation of figureIt can be clearly appeared from the detailed description of example.By the explanation of specific embodiment, when predetermined purpose can be reached to the present inventionThe technical means and efficacy taken be able to more deeply and it is specific understand, however institute's attached drawing be only to provide reference and description itWith being not intended to limit the present invention.
[first embodiment]
Fig. 1 is the overlooking structure diagram of the array substrate of first embodiment of the invention, referring to Fig. 1, array substrate 100With viewing area 101 and around the non-display area 102 of viewing area 101.It is noted that array substrate 100 is in the first baseThe production of viewing area 101 and non-display area 102 is carried out on plate 110 simultaneously, first substrate 110 actually also has corresponding displayArea 101 and non-display area 102.
Fig. 2 is the partial structural diagram of the pixel region of the array substrate of first embodiment of the invention, and Fig. 3 is along Fig. 2In III-III line partial profile structure, Fig. 4 is the partial profile structure of IV-IV line along Fig. 2, and Fig. 5 is edgeThe partial profile structure of V-V line, please joins Fig. 2, Fig. 3, Fig. 4 and Fig. 5 together in Fig. 2, it should be noted that array baseThe viewing area 101 of plate 100 includes that multi-strip scanning line 121 and multiple data lines 163 intersect and limit multiple pixel regions, is sweptIt retouches and is provided with thin film transistor (TFT) 103 at 163 crossover location of line 121 and data line, for illustrative simplicity, Fig. 2 only depicts correspondenceThe partial structural diagram of one pixel region of the viewing area 101 of array substrate 100.Below by the array base to the present embodimentThe structure of plate 100 is described in further detail.
Array substrate 100 includes first substrate 110 and the first metal layer 120, first being arranged on the first substrate 110Insulating layer 130, semiconductor layer 140, first transparency electrode layer 150, second metal layer 160, second insulating layer 170, insulation protectionLayer 180, third insulating layer 190, third metal layer 210 and second transparency electrode layer 220.
First substrate 110 is transparent substrate.
The first metal layer 120 is formed on first substrate 110, including scan line 121 and grid 122.In the present embodiment, theThe material of one metal layer 120 is ITO (Indium Tin Oxide, tin indium oxide), the Mo being cascading from top to bottom(molybdenum), Al (aluminium), Mo (molybdenum).
First insulating layer 130, is formed on first substrate 110 and covers the first metal layer 120, and the first insulating layer 130 coversEntire first substrate 110 is covered, the gate insulating layer 131 including being located at viewing area 101.
Semiconductor layer 140 is formed on the first insulating layer 130 (gate insulating layer 131) and is located at the top of grid 122.Semiconductor layer 140 is, for example, amorphous silicon (a-Si) semiconductor layer, but is not limited thereto.
First transparency electrode layer 150 is formed on the first insulating layer 130, including first electrode 151.This first transparent electricityPole layer 150 is, for example, by IZO (Indium Zinc Oxide, indium zinc oxide), ITO (Indium Tin Oxide, tin indium oxide)Equal transparent conductive materials are made.In embodiment, first electrode 151 is the pixel electrode of planar.
Second metal layer 160 is formed on first transparency electrode layer 150, including source electrode 161, drain electrode 162 and data line163；Source electrode 161 and drain electrode 162 are separated and contact respectively with semiconductor layer 140, so that partial semiconductor layer 140 is from sourceExpose between pole 161 and drain electrode 162, source electrode 161 connect with data line 163, drain 162 cover a part of first electrodes 151 fromAnd realization electrical connection is contacted with first electrode 151.In the present embodiment, the material of second metal layer 160 is successively layer from top to bottomITO (Indium Tin Oxide, tin indium oxide), the Mo (molybdenum), Al (aluminium), Mo (molybdenum) of folded setting.
Second insulating layer 170 is formed in second metal layer 160.In the present embodiment, second insulating layer 170 sets for whole faceIt sets and covers entire viewing area 101.
Insulating protective layer 180 is formed in the second insulating layer 170, the non-open areas including being located at the viewing area 101The protective layer 181 of B, in other words, protective layer 181 are engraved structure in open area A, and protective layer 181 is not disposed on open regionIn the A of domain.
Third insulating layer 190 is formed on the insulating protective layer 180.
Third metal layer 210 is formed on third insulating layer 190, including conductive bar 211, which is located at scanningThe top of line 121.In the present embodiment, conductive bar 211 is made of conductive metallic material.
Second transparency electrode layer 220 is formed on third insulating layer 190, and second transparency electrode layer 220 includes being located at displayThe second electrode 221 in area 101, the second electrode 221 cover conductive bar 211, and second electrode 221 is directly contacted with conductive bar 211Connection, conductive bar 211 can reduce the resistance of second electrode 221.Second transparency electrode layer 220 is, for example, by IZO (IndiumZinc Oxide, indium zinc oxide), the transparent conductive materials such as ITO (Indium Tin Oxide, tin indium oxide) are made.This implementationIn example, second electrode 221 is the public electrode with slit.In the present embodiment, the first electrode 151 being connected with drain electrode 162 is firstIn second electrode 221 formation, and first electrode 151 and drain electrode 162 between directly contact, be not provided with insulating layer, thus also withoutAperture on the insulating layer is needed to connect first electrode 151 and drain electrode 162, that is, uses the framework of public electrode overhead, can effectively increaseThe aperture opening ratio of big array substrate 100.
It include first electrode 151, second in each pixel region in the viewing area of array substrate 100 in the present embodimentElectrode 221 and the protective layer 181 being arranged between first electrode 151 and second electrode 221.As shown in Figures 2 and 3, viewing area hasThere are open area A and non-open areas B, wherein protective layer 181 is provided only on non-open areas B, does not set in the A of open areaSet protective layer 181.Wherein, open area A refers to that (i.e. light is permeable effectively for effective transmission region in each pixel regionRegion).In liquid crystal display panel, when light is emitted via backlight, not all light can pass through aobviousShow panel, such as driving chip, signal lead (such as scan line and data line) and switch element itself etc..These placesOther than incomplete light transmission, also due to being not exposed to the control of voltage by the light in these places, and it can not show correctlyGrayscale, so all need to be covered using the black matrix being located on colored optical filtering substrates, in order to avoid interfere with other transmission regionsCorrect brightness.Open area A also corresponds to the position of color blocking layer in each pixel region.Non-open areas B i.e. refer to exceptRegion other than the A of mouth region domain that is to say the light tight region covered by black matrix.
In the present embodiment, the thickness of protective layer 181 be 2 microns (i.e.Left and right) due to protective layer 181 onlyBe arranged in non-open areas B, the then not set protective layer 181 in the A of open area, therefore, first electrode 151 (pixel electrode) andThe distance between second electrode 221 (public electrode) is very thin, and (only across second insulating layer 170 and third insulating layer 190, two layer by layerThickness isLeft and right), the distance between first electrode 151 and second electrode 221 be far in the open area A of array substrate 100Less than the distance of conventional design in the prior art, (the present embodiment reduces 2 microns of thickness of protective layer 181 compared with prior artLeft and right), the reduction of the distance between first electrode 151 and second electrode 221 so that first electrode 151 and second electrode 221 itBetween generated electric field strength reinforce, the rotatory power of the liquid crystal molecule under the electric field is reinforced, therefore, electric in identical drivingPressure can effectively improve the penetrance of liquid crystal display device, reduce response time and power consumption, have liquid crystal display device moreAdd perfect display effect.
Array substrate 100 further includes the non-display area 102 around viewing area 101, also has various companies in non-display area 102Conducting wire is connect, and these connecting wires can be made in same processing procedure together when making viewing area 101, it below will be specificIt is illustrated.
Fig. 6 is the non-display area partial profile structure of the array substrate of first embodiment of the invention, and Fig. 7 is this hairAnother partial profile structure of the non-display area of the array substrate of bright first embodiment, referring to Figure 2 together, Fig. 6 and figure7, first substrate 110 further includes the non-display area 102 around viewing area 101, and non-display area 102 has first through hole 102a and theTwo through-hole 102b, wherein first through hole 102a is used for the second transparency electrode layer 220 and the first metal layer of non-display area 102Electrical connection is realized in 120 conductings, and the second through-hole 102b is used for the second transparency electrode layer 220 and the second metal of non-display area 102Electrical connection is realized in 160 conducting of layer, and the first metal layer 120 and second of non-display area 102 is bridged by second transparency electrode layer 220Metal layer 160.
Specifically, the first metal layer 120 includes the first conductive layer 123 positioned at non-display area 102；Second metal layer 160The second conductive layer 164 including being located at non-display area；Insulating protective layer 180 includes the peripheral protective layer positioned at non-display area 102182；Second transparency electrode layer 220 includes the third conductive layer 222 positioned at non-display area 102；First insulating layer 130 and second is exhaustedEdge layer 170 covers entire first substrate 110.In the region first through hole 102a of non-display area 102, including successively layer from lower to upperThe first conductive layer 123, the first insulating layer 130, second insulating layer 170, peripheral protective layer 182 and the third conductive layer of folded setting222, wherein first through hole 102a penetrates through the first insulating layer 130, second insulating layer 170 and peripheral protective layer 182 to expose firstConductive layer 123, third conductive layer 222, which is inserted in first through hole 102a, contacts realization electrical connection with the first conductive layer 123.Non- aobviousThe second region through-hole 102b for showing area 102, including the first insulating layer 130, the second conductive layer being cascading from lower to upper164, second insulating layer 170, peripheral protective layer 182 and third conductive layer 222, wherein the second insulation of the second through-hole 102b perforationTo expose the second conductive layer 164, third conductive layer 222 is inserted in the second through-hole 102b and second for layer 170 and peripheral protective layer 182Electrical connection is realized in the contact of conductive layer 164.
The invention further relates to a kind of liquid crystal display devices, including above-mentioned array substrate 100.Fig. 8 is that have the present invention theThe partial profile structure of the liquid crystal display device of the array substrate of one embodiment, referring to Fig. 8, liquid crystal display device packetInclude array substrate 100 and the colored optical filtering substrates being oppositely arranged with array substrate 100 300 and be located in array substrate 100 withLiquid crystal layer (not shown) between colored optical filtering substrates 300.Colored optical filtering substrates 300 include the second substrate 310 and setting theColor blocking layer 311 and black matrix 312 on two substrates 310, color blocking layer 311 include the R color blocking being located in each pixel region, G colorThe surrounding of each R color blocking, G color blocking or B color blocking is arranged in by two adjacent R color blockings, G color blocking in resistance or B color blocking, black matrix 312Or B color blocking is spaced apart.Wherein, in viewing area, open area A corresponds to the pattern of color blocking layer 311, and non-open areas B is correspondingThe pattern of black matrix 312.The other structures of liquid crystal display device be it is known in the art, details are not described herein.
It is specific as follows the invention further relates to the production method of above-mentioned array substrate 100:
It is saturating that the first metal layer 120, the first insulating layer 130, semiconductor layer 140, first are sequentially formed on first substrate 110Prescribed electrode layer 150, second metal layer 160 and second insulating layer 170, the product method of above structure are known in the art, InThis is repeated no more.
Patterning forms insulating protective layer 180, and being formed by insulating protective layer 180 includes the protection positioned at viewing area 101Layer 181, and the protective layer 181 is provided only in the non-open areas B of viewing area 101, protective layer 181 is opened viewing area 101Mouth region domain A is engraved structure.As shown in Figure 9 A, after patterning forms insulating protective layer 180, insulating protective layer 180 successivelyFormed entire third insulation material layer 190 ', entire third metal material layer 210 ' and entire photoresist layer400。
As shown in Figure 9 B, photoresist layer 400 is exposed using intermediate tone mask plate (half tone mask), thisIn embodiment, photoresist layer 400 is positivity photoresist, and the lightproof part of intermediate tone mask plate corresponds to conductive bar 211Position, the light transmission part of intermediate tone mask plate correspond to third insulating layer 190 and need the position that removes, intermediate tone mask plate it is semi-transparentLight part corresponds to the other positions other than the position that conductive bar 211 and third insulating layer 190 need to remove, photoresist layer 400It will form patterned photoresist layer 400 ' after developed, wherein the corresponding position of the lightproof part of intermediate tone mask plate is firstThe thickness of photoresist layer 401, the first photoresist layer 401 is constant, and the corresponding position in semi-transparent part of intermediate tone mask plate is the second lightResistance layer 402, the thickness of the second photoresist layer 402 is less than the thickness of the first photoresist layer 401, the specific such as thickness of the second photoresist layer 402Degree be the first photoresist layer 401 thickness half, the corresponding position in the light transmission part of intermediate tone mask plate then all removal (such asThe photoresist layer 400 of non-display area 102 then all eliminates) third metal material layer 210 ' to be exposed.That is, photoresist layer400 ' include the first photoresist layer 401, the second photoresist layer 402 and the hollow out other than the first photoresist layer 401 and the second photoresist layer 402Region, the position of the corresponding conductive bar 211 of the first photoresist layer 401, corresponding 190 needs of third insulating layer being subsequently formed in hollowed out areaThe position of removal.
As shown in Figure 9 C, the third metal material layer 210 ' that etching removal for the first time is not covered by photoresist layer 400 '.
As shown in fig. 9d, the third insulation material layer 190 ' that etching removal is not covered by photoresist layer 400 ', forms patterningThird insulating layer 190 afterwards.
As shown in fig. 9e, the second insulating layer 170 that etching removal is exposed from insulating protective layer 180 (peripheral protective layer 182),The step is used to form the second through-hole 102b on non-display area 102.
As shown in fig. 9f, the first insulating layer 130 that further etching removal is exposed from second insulating layer 170, the step are usedIn the first through hole 102a formed on non-display area 102.
As shown in fig. 9g, photoresist layer 400 ' is further etched, removes the second photoresist layer 402, reservation forms conductive bar 211Position above the first photoresist layer 401.
As shown in Fig. 9 H, second of etching is carried out to third metal material layer 210 ' and forms the third including conductive bar 211Metal layer 210.
As shown in figure 91, the first photoresist layer 401 above the position of conductive bar 211 is removed.
As shown in Fig. 9 J, second transparency electrode layer 220 is formed above third metal layer 210, it is transparent to be formed by secondElectrode layer 220 includes the second electrode 221 positioned at viewing area 101 and third conductive layer 222 positioned at non-display area 102, and secondElectrode 221 covers conductive bar 211, and second electrode 221 and conductive bar 211 directly connect, and conductive bar 211 is by conductive metal materialMaterial is made, and conductive bar 211 can reduce the resistance of second electrode 221.
Further, since the first through hole 102a of non-display area 102 and the second through-hole 102b are also in half above-mentioned colorMask plate etching production is adjusted to be formed.Using in intermediate tone mask plate processing procedure, third metal material layer 210 ' is needed by secondaryEtching, therefore the material of the first metal layer 120 and second metal layer 160 is set as to the ITO/ being cascading from top to bottomStructure becomes more dense after annealing by Mo/Al/Mo, the ITO of top layer, can prevent the first metal layer 120 and second metal layer 160It is accidentally etched during the second etch of third metal layer 210.
The array substrate 100 of the present embodiment uses intermediate tone mask plate (half tone mask) optical cover process, can beIt is formed simultaneously third metal layer 210 in one optical cover process and forms first through hole 102a and the second through-hole in non-display area 102102b simplifies processing procedure, further improves production capacity.
[second embodiment]
Figure 10 is the partial profile structure of the pixel region of the array substrate of second embodiment of the invention, please togetherRefering to Fig. 2 and Figure 10, the array substrate 100 of second embodiment is roughly the same with first embodiment, the difference is that: it is located at aobviousShow that the second insulating layer 170 in area 101 is provided only on non-open areas B, i.e., second insulating layer 170 it is patterned after, only protectNon-open areas B is stayed in, open area A is engraved structure.
It is then not set in the A of open area since protective layer 181 and second insulating layer 170 are provided only on non-open areas BProtective layer 181 and second insulating layer 170, therefore, first electrode 151 (pixel electrode) and second electrode 221 (public electrode) itBetween distance to compare first embodiment thinner (only across third insulating layer 190), between first electrode 151 and second electrode 221Distance reduction so that generated electric field strength is reinforced between first electrode 151 and second electrode 221, under the electric fieldThe rotatory power of liquid crystal molecule is reinforced, and therefore, under identical driving voltage, further improves penetrating for liquid crystal display deviceRate reduces response time and power consumption, and liquid crystal display device is made to have more perfect display effect.
The production method of the array substrate 100 of second embodiment, which compares first embodiment, need to only form second metal layerAfter 160, increases by one of optical cover process, get rid of second insulating layer 170 in the part of open area A, so that second insulating layer 170It is provided only on non-open areas B.
[3rd embodiment]
Figure 11 is the partial profile structure of the pixel region of the array substrate of third embodiment of the invention, please togetherRefering to Fig. 2 and Figure 11, the array substrate 100 of 3rd embodiment is roughly the same with first embodiment, the difference is that: it is located at aobviousShow that the third insulating layer 190 in area 101 is provided only on non-open areas B, i.e., third insulating layer 190 it is patterned after, only protectNon-open areas B is stayed in, open area A is engraved structure.
It is then not set in the A of open area since protective layer 181 and third insulating layer 190 are provided only on non-open areas BProtective layer 181 and third insulating layer 190, therefore, first electrode 151 (pixel electrode) and second electrode 221 (public electrode) itBetween distance to compare first embodiment thinner (only across second insulating layer 170), between first electrode 151 and second electrode 221Distance reduction so that generated electric field strength is reinforced between first electrode 151 and second electrode 221, under the electric fieldThe rotatory power of liquid crystal molecule is reinforced, and therefore, under identical driving voltage, further improves penetrating for liquid crystal display deviceRate reduces response time and power consumption, and liquid crystal display device is made to have more perfect display effect.
In another embodiment of the invention, third insulating layer 190 can also be not provided with, i.e., it is straight on insulating protective layer 180Setting second transparency electrode layer 220 is connect, it is then not set in the A of open area since protective layer 18 is provided only on non-open areas BProtective layer 181, therefore, only across the second insulation between first electrode 151 (pixel electrode) and second electrode 221 (public electrode)The penetrance of liquid crystal display device equally can be improved in layer 170, reduces response time and power consumption, has liquid crystal display device moreAdd perfect display effect.
Above to array substrate provided by the present invention and preparation method thereof and with the liquid crystal display of this array substrateDevice is described in detail, and used herein a specific example illustrates the principle and implementation of the invention, withThe explanation of upper embodiment is merely used to help understand method and its core concept of the invention；Meanwhile for the general of this fieldTechnical staff, according to the thought of the present invention, there will be changes in the specific implementation manner and application range, in conclusionThe contents of this specification are not to be construed as limiting the invention.