CN110230031B - A broadband passive high temperature flexible vibration sensor and its preparation process - Google Patents
A broadband passive high temperature flexible vibration sensor and its preparation processDownload PDFInfo
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Abstract
Description
Technical Field
The invention relates to the field of vibration sensors, in particular to a broadband passive high-temperature-resistant flexible vibration sensor and a preparation process thereof.
Background
With the continuous development of science and technology in China, the requirement on the dynamic monitoring capability of the complex surface vibration parameters of the special anisotropic component at (-50 ℃ -300 ℃) under the extreme environment is increasingly improved in the manufacturing and running processes of large equipment, and the dynamic monitoring capability becomes the bottleneck of the key technology for improving the performance of the special anisotropic component. Because the traditional vibration sensor takes the non-flexible substrate as a base, the non-flexible substrate cannot be tightly attached to the surface of a heterogeneous piece, the non-flexible substrate is easy to fall off in a working state, and the wired test method has the problems of poor contact of a contact point, distortion of a test result and the like in an extreme environment. Therefore, a brand new broadband passive high-temperature-resistant flexible vibration sensor needs to be invented to realize dynamic and accurate measurement of the surface vibration parameters of the complex component in the extreme environment.
Disclosure of Invention
The invention provides a broadband passive high-temperature-resistant flexible vibration sensor, which is used for accurately measuring the vibration parameters of the complex surface of a special anisotropic component under an extreme environment (50 ℃ below zero to 300 ℃).
In order to achieve the purpose, the invention adopts the technical scheme that:
a broadband passive high-temperature-resistant flexible vibration sensor is divided into five layers from top to bottom, namely a high-temperature-resistant alumina film packaging layer, a capacitor upper polar plate, a rectangular inductance coil layer, an alumina film dielectric layer, a capacitor lower polar plate layer and a polyimide layer serving as a substrate; the capacitor comprises a polyimide substrate, and is characterized in that a capacitor lower polar plate is deposited on the polyimide substrate, an alumina film dielectric layer is deposited on the capacitor lower polar plate, a capacitor upper polar plate and an inductance coil are deposited on the alumina film dielectric layer, the capacitor upper polar plate is positioned at the center of the inductance coil, a high-temperature-resistant alumina film packaging layer is deposited on the capacitor upper polar plate and the inductance coil, and a through hole for realizing the electric connection of the capacitor lower polar plate and the inductance coil is formed in the alumina film dielectric layer.
Further, the shape of the inductance coil is a rectangular spiral shape.
Furthermore, the thickness of the broadband passive high-temperature-resistant flexible vibration sensor is less than or equal to 200 mu m.
Furthermore, the thicknesses of the upper and lower electrode plates of the capacitor and the rectangular inductance coil are less than or equal to 10 microns, and the preparation materials are all high-temperature-resistant metal silver.
Further, the thickness of the polyimide substrate is less than or equal to 100 mu m.
Furthermore, the thickness of the alumina film dielectric layer and the thickness of the high-temperature resistant alumina film packaging layer are both less than or equal to 50 μm.
The invention also provides a preparation process of the broadband passive high-temperature-resistant flexible vibration sensor, which comprises the following steps of:
s1 pretreatment of flexible substrate
Sequentially carrying out ultrasonic cleaning on a polyimide substrate in acetone, ethanol and deionized water, and drying the cleaned polyimide substrate;
s2 preparation of capacitor lower plate
The main process of preparing the capacitor bottom plate is that the pattern of the capacitor bottom plate is displayed by gluing, exposing and developing the clean polyimide base surface, and the capacitor bottom plate film is prepared by a direct current sputtering process, and the specific preparation process comprises the following steps:
a. coating a layer of uniform photoresist on the bottom surface of a clean polyimide base by using a glue spreader, and drying in a drying furnace at 100 ℃;
b. placing the prepared mask plate of the pattern of the lower electrode plate of the capacitor on the surface of the substrate coated with the photoresist, and exposing for 3-5 s by using an exposure lamp to transfer the pattern of the mask plate to the surface of the substrate;
c. post-baking the exposed substrate to eliminate the standing wave effect on the side wall of the photoresist layer;
d. soaking the substrate subjected to the post-baking treatment in a developing solution for 5-10 s to completely display the surface graph of the substrate;
e. sequentially placing the graphical substrate and the Ag target to be sputtered at the sample rotating platform and target source installation position in a sputtering chamber, starting a sputtering power supply and the sample rotating platform, and keeping the vacuum degree of the sputtering chamber lower than 2X10-4Pa, sputtering power 266.8W, sputtering chamber working pressure 3Pa, Ag target passing Ar+Shooting Ag particles, depositing the Ag particles on the surface of the polyimide to form a metal silver layer, and turning off a power supply and stopping sputtering when the thickness of the metal silver layer reaches 10 mu m;
f. cleaning the sputtered polyimide substrate by using acetone, removing the residual photoresist on the substrate, cleaning the residual acetone solution by using deionized water, standing in the air, and drying to finish the preparation of the lower electrode plate of the capacitor;
s3 preparation of aluminum oxide thin film dielectric layer
In order to avoid direct contact between the upper electrode plate and the lower electrode plate of the capacitor, after the lower electrode plate of the capacitor is prepared, an insulated aluminum oxide film dielectric layer is prepared on the surface of the lower electrode plate of the capacitor, wherein the preparation process comprises the steps of taking Al as a target material and O2The preparation is completed by adopting a radio frequency sputtering process as a reaction gas, and the specific flow is as follows:
a. on the surface of a clean capacitor lower pole plate film, photoresist is only left at a through hole by using the processes of gluing, exposing, developing and the like so as to prevent the lower pole plate of the capacitor and the inductance coil from being electrically insulated by filling the photoresist with insulated alumina;
b. at a vacuum degree of 3X10-3Pa, working pressure of 0.5Pa, Al as target material, O2Preparing an alumina film dielectric layer with the thickness of 50 mu m on the surface of the lower electrode plate of the capacitor by adopting a radio frequency sputtering process as a reaction gas;
c. after the aluminum oxide thin film dielectric layer is sputtered, sequentially cleaning the surface of the substrate by using acetone and deionized water, removing the residual photoresist and the residual acetone solution, and drying to finish the preparation of the aluminum oxide thin film dielectric layer;
s4 preparation of capacitor upper plate and inductance coil film
The preparation process of the capacitor upper electrode plate and the inductance coil film is consistent with that of the capacitor lower electrode plate, namely, Ag is used as a sputtering target material and Ar is used as sputtering gas on the surface of an alumina film dielectric layer, a metal Ag film with the thickness of 10 mu m is prepared by adopting a direct current sputtering process, the filling of metal Ag in a through hole is completed, the electric connection between the capacitor lower electrode plate and the outer end of the inductance coil is realized, the surface of the sputtered film is cleaned, the redundant photoresist and residual organic solution on the surface of the film are removed, and the preparation of the capacitor upper electrode plate and the inductance coil film is completed after the cleaning;
s5 preparation of high-temperature-resistant aluminum oxide film packaging layer
In order to avoid direct contact between the capacitance and the inductance of the sensor and the working environment, a layer of high-temperature-resistant aluminum oxide film is prepared on the uppermost surface of the sensor to serve as a packaging layer, the preparation process is the same as that of an aluminum oxide film dielectric layer, and the surfaces of an upper electrode plate of the capacitance and an LC conductive connecting layer are respectively provided with a capacitor and an LC conductive connecting layerSurface, using Al as target material, O2Preparing an alumina film dielectric layer with the thickness of 50 mu m by adopting a radio frequency sputtering process as reaction gas, cleaning the surface of the sputtered film dielectric layer, removing redundant photoresist and residual organic solution on the surface of the film dielectric layer, and cleaning to finish the preparation of the high-temperature resistant alumina film packaging layer.
The invention has the following beneficial effects:
aiming at the application limitation of the traditional vibration sensor in large-scale equipment, the flexible polyimide material is selected as the substrate, can be completely attached to the surface of the special-shaped component, is not easy to vibrate and fall off in the large-scale equipment work, and can realize the dynamic and accurate measurement of the vibration parameters on the surface of the special-shaped component.
The sensor can work normally and stably in a high-temperature environment by selecting the high-temperature resistant metal Ag as a conductive material and the high-temperature resistant ceramic alumina as a medium and a packaging material.
The wireless non-contact measurement principle avoids the lead wire use of the traditional high-temperature vibration sensor, so that the sensor is more suitable for special environments, and the application range of the sensor is widened.
Under a special environment, the passive high-temperature-resistant vibration sensor can accurately realize the measurement of vibration parameters of a wide frequency band.
Drawings
Fig. 1 is a flow chart of a manufacturing process of a broadband passive high-temperature-resistant flexible vibration sensor according to an embodiment of the present invention.
Fig. 2 is a cross-sectional view of a broadband passive high-temperature-resistant flexible vibration sensor according to an embodiment of the present invention.
Fig. 3 is a working schematic diagram of a broadband passive high-temperature-resistant flexible vibration sensor according to an embodiment of the present invention.
Detailed Description
The present invention will be described in detail with reference to specific examples. The following examples will assist those skilled in the art in further understanding the invention, but are not intended to limit the invention in any way. It should be noted that variations and modifications can be made by persons skilled in the art without departing from the spirit of the invention. All falling within the scope of the present invention.
As shown in fig. 1, an embodiment of the present invention provides a broadband passive high temperature resistant flexible vibration sensor, which is divided into five layers from top to bottom, including a high temperature resistant alumina film encapsulation layer, a capacitor upper plate, a rectangular inductor coil layer, an alumina film dielectric layer, a capacitor lower plate layer, and a polyimide layer as a substrate. A capacitor lowerpolar plate 2 is deposited on thepolyimide substrate 1, an alumina filmdielectric layer 3 is deposited on the capacitor lowerpolar plate 2, a capacitor upperpolar plate 5 and aninductance coil 4 are deposited on the alumina filmdielectric layer 3, the capacitor upper polar plate is positioned at the center of the inductance coil, and a high-temperature-resistant aluminafilm packaging layer 6 is deposited on the capacitor upperpolar plate 5 and theinductance coil 4; and the aluminum oxide film dielectric layer is provided with athrough hole 7 for realizing the electric connection of the capacitor lower polar plate and the inductance coil. The capacitor plate and the inductance coil are made of high-temperature-resistant metal Ag, the aluminum oxide film dielectric layer film is used for preventing the upper and lower electrode plates of the capacitor from being electrically connected, and the high-temperature-resistant aluminum oxide film packaging layer film is used for protecting the inductance capacitor.
As shown in fig. 2, the thickness of the flexible polyimide substrate is 100 μm, the thickness of the alumina film dielectric layer and the thickness of the high temperature resistant alumina film encapsulation layer are both 50 μm, the shape of the inductance coil is rectangular spiral, the thickness of the rectangular inductance coil and the thickness of the upper and lower electrodes of the capacitor are both 10 μm, and the prepared materials are high temperature resistant metallic silver; the testing schematic diagram of the broadband passive high-temperature-resistant flexible vibration sensor is shown in fig. 3, the prepared vibration sensor is attached to the surface of a large-scale equipment special-shaped component, when the vibration sensor works, airflow in the large-scale equipment causes the small vibration of the special-shaped component, so that the distance between the large-scale equipment special-shaped component and a reading antenna is changed, the equivalent inductance L of the sensor is changed, and further the resonant frequency of the sensor is changed
The change is transmitted to a back-end processing module under low temperature environment through non-contact coupling with a reading antenna, and the change is derivedAnd solving the data in the rear-end processing module to realize the accurate measurement of the surface vibration parameters (displacement d, speed v and acceleration a) of the heterogeneous piece.
The embodiment of the invention also provides a preparation process of the broadband passive high-temperature-resistant flexible vibration sensor, which comprises the following steps:
s1 pretreatment of flexible substrate
Sequentially carrying out ultrasonic cleaning on a polyimide substrate in acetone, ethanol and deionized water, and drying the cleaned polyimide substrate;
s2 preparation of capacitor lower plate
The main process of preparing the capacitor bottom plate is that the pattern of the capacitor bottom plate is displayed by gluing, exposing and developing the clean polyimide base surface, and the capacitor bottom plate film is prepared by a direct current sputtering process, and the specific preparation process comprises the following steps:
a. coating a layer of uniform photoresist on the bottom surface of a clean polyimide base by using a glue spreader, and drying in a drying furnace at 100 ℃;
b. placing the prepared mask plate of the pattern of the lower electrode plate of the capacitor on the surface of the substrate coated with the photoresist, and exposing for 3-5 s by using an exposure lamp to transfer the pattern of the mask plate to the surface of the substrate;
c. post-baking the exposed substrate to eliminate the standing wave effect on the side wall of the photoresist layer;
d. soaking the substrate subjected to the post-baking treatment in a developing solution for 5-10 s to completely display the surface graph of the substrate;
e. placing the graphical substrate and the Ag target material to be sputtered into a sample rotating platform and a target source installation position in a sputtering chamber, starting a sputtering power supply and the sample rotating platform, and keeping the vacuum degree of the sputtering chamber lower than 2X10-4Pa, sputtering power 266.8W, sputtering chamber working pressure 3Pa, Ag target passing Ar+Shooting Ag particles, depositing the Ag particles on the surface of the polyimide to form a metal silver layer, and turning off a power supply and stopping sputtering when the thickness of the metal silver layer reaches 10 mu m;
f. cleaning the sputtered polyimide substrate by using acetone, removing the residual photoresist on the substrate, cleaning the residual acetone solution by using deionized water, standing and drying in the air, and preparing a lower electrode plate of the capacitor;
s3 preparation of aluminum oxide thin film dielectric layer
In order to avoid direct contact between the upper electrode plate and the lower electrode plate of the capacitor, after the lower electrode plate of the capacitor is prepared, an insulated aluminum oxide film dielectric layer is prepared on the surface of the lower electrode plate of the capacitor, wherein the preparation process comprises the steps of taking Al as a target material and O2The preparation is completed by adopting a radio frequency sputtering process as a reaction gas, and the specific flow is as follows:
a. on the surface of a clean capacitor lower pole plate film, photoresist is only left at a through hole by using the processes of gluing, exposing, developing and the like so as to prevent the lower pole plate of the capacitor and the inductance coil from being electrically insulated by filling the photoresist with insulated alumina;
b. at a vacuum degree of 3X10-3Pa, working pressure of 0.5Pa, Al as target material, O2Preparing an alumina film dielectric layer with the thickness of 50 mu m on the surface of the lower electrode plate of the capacitor by adopting a radio frequency sputtering process as a reaction gas;
c. after the aluminum oxide thin film dielectric layer is sputtered, sequentially cleaning the surface of the substrate by using acetone and deionized water, removing the photoresist and residual acetone solution at the through hole, and drying to finish the preparation of the aluminum oxide thin film dielectric layer;
s4 preparation of capacitor upper plate and inductance coil film
The preparation process of the capacitor upper electrode plate and the inductance coil film is consistent with that of the capacitor lower electrode plate, namely, Ag is used as a sputtering target material and Ar is used as sputtering gas on the surface of an alumina film dielectric layer, a metal Ag film with the thickness of 10 mu m is prepared by adopting a direct current sputtering process, the filling of metal Ag in a through hole is completed, the electric connection between the capacitor lower electrode plate and the outer end of the inductance coil is realized, the surface of the sputtered film is cleaned, the redundant photoresist and residual organic solution on the surface of the film are removed, and the preparation of the capacitor upper electrode plate and the inductance coil film is completed after the cleaning;
s5 preparation of high-temperature-resistant aluminum oxide film packaging layer
In order to avoid the capacitance and the inductance of the sensor from being in direct contact with the working environmentAnd contacting, and preparing a layer of high-temperature-resistant aluminum oxide film as a packaging layer on the uppermost surface of the sensor. The preparation process is the same as that of an alumina film dielectric layer, Al is taken as a target material on the surfaces of an upper polar plate of a capacitor and an LC conductive connecting layer, and O is taken as a target material2Preparing an alumina film dielectric layer with the thickness of 50 mu m by adopting a radio frequency sputtering process as reaction gas, cleaning the surface of the sputtered film dielectric layer, removing redundant photoresist and residual organic solution on the surface of the film dielectric layer, and cleaning to finish the preparation of the high-temperature resistant alumina film packaging layer.
The foregoing description of specific embodiments of the present invention has been presented. It is to be understood that the present invention is not limited to the specific embodiments described above, and that various changes or modifications may be made by one skilled in the art within the scope of the appended claims without departing from the spirit of the invention. The embodiments and features of the embodiments of the present application may be combined with each other arbitrarily without conflict.
Claims (6)
1. The utility model provides a passive high temperature resistant flexible vibration sensor of broadband, its characterized in that, sensor top-down divide into five layers, be high temperature resistant alumina film encapsulation layer, electric capacity upper polar plate and inductance coil layer, alumina film dielectric layer, the lower polar plate layer of electric capacity and the polyimide layer as the basement respectively, deposit the electric capacity bottom plate on the polyimide layer, deposit alumina film dielectric layer on the electric capacity bottom plate, deposit electric capacity upper polar plate and inductance coil on the alumina film dielectric layer, and electric capacity upper polar plate is located inductance coil's center department, and electric capacity upper polar plate and inductance coil are last to deposit high temperature resistant alumina film encapsulation layer, be equipped with the through-hole that is used for realizing electric connection of electric capacity lower polar plate and inductance coil on the alumina film dielectric layer.
2. The broadband passive high temperature resistant flexible vibration sensor of claim 1 wherein said inductor coil is in the shape of a rectangular spiral.
3. The broadband passive high temperature resistant flexible vibration sensor according to claim 1, wherein the thickness of the broadband passive high temperature resistant flexible vibration sensor is less than or equal to 200 μm.
4. The broadband passive high-temperature-resistant flexible vibration sensor as claimed in claim 2, wherein the thicknesses of the upper and lower electrode plates of the capacitor and the rectangular inductance coil are respectively less than or equal to 10 μm, and the preparation materials are high-temperature-resistant metallic silver.
5. The broadband passive high temperature resistant flexible vibration sensor according to claim 1, wherein said polyimide substrate has a thickness of 100 μm or less.
6. The broadband passive high temperature resistant flexible vibration sensor according to claim 1, wherein the thickness of the alumina film dielectric layer and the thickness of the high temperature resistant alumina film encapsulation layer are both less than or equal to 50 μm.
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| CN110646474A (en)* | 2019-10-25 | 2020-01-03 | 中北大学 | A wireless passive H2 gas sensor based on WO3 and its preparation method |
| CN111024213B (en)* | 2019-12-27 | 2021-03-30 | 安徽芯淮电子有限公司 | Flexible capacitive vibration sensor and manufacturing method thereof |
| CN113325199B (en)* | 2021-06-09 | 2022-04-29 | 东南大学 | Thermopile type high-sensitivity flexible acceleration sensor and preparation method thereof |
| CN114111551A (en)* | 2021-11-26 | 2022-03-01 | 安徽见行科技有限公司 | Sensor reference probe, processing circuit and eddy current displacement sensor |
| CN115200642A (en)* | 2022-07-14 | 2022-10-18 | 西安交通大学 | A flexible temperature-pressure integrated sensor with high temperature resistance and preparation method thereof |
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| CN113025975A (en) | 2021-06-25 |
| CN113025975B (en) | 2022-08-30 |
| CN110230031A (en) | 2019-09-13 |
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