技术领域technical field
本发明涉及振动传感器领域，具体涉及一种宽频带无源耐高温柔性振动传感器及其制备工艺。The invention relates to the field of vibration sensors, in particular to a broadband passive high temperature flexible vibration sensor and a preparation process thereof.
背景技术Background technique
随着我国科学技术的不断发展，在大型装备制造及运行过程中，对极端环境下(-50℃～300℃)特殊异性构件复杂表面振动参数实施动态监测能力的要求日益提高，现已成为其性能提升的关键技术“瓶颈”。由于传统的振动传感器以非柔性衬底为基底，无法与异构件表面紧密贴合，在工作状态下容易脱落，且有线的测试方法在极端环境下存在接点接触不良、测试结果失真等问题。因此，亟需发明一种全新的宽频带无源耐高温柔性振动传感器以实现极端环境下复杂构件表面振动参数的动态精准测量。With the continuous development of science and technology in our country, in the process of large-scale equipment manufacturing and operation, the requirements for dynamic monitoring of complex surface vibration parameters of special components in extreme environments (-50 °C ~ 300 °C) are increasing. The key technical "bottleneck" for performance improvement. Because the traditional vibration sensor is based on an inflexible substrate, it cannot be closely attached to the surface of different components, and it is easy to fall off under working conditions, and the wired test method has problems such as poor contact contact and distortion of test results in extreme environments. Therefore, it is urgent to invent a new broadband passive high temperature flexible vibration sensor to achieve dynamic and accurate measurement of vibration parameters of complex components in extreme environments.
发明内容SUMMARY OF THE INVENTION
本发明提供了一种宽频带无源耐高温柔性振动传感器，以实现对极端环境下(-50℃～300℃)特殊异性构件复杂表面振动参数的精准测量。The invention provides a broadband passive high-temperature flexible vibration sensor, so as to realize the accurate measurement of the vibration parameters of the complex surface of the special component under extreme environment (-50°C to 300°C).
为实现上述目的，本发明采取的技术方案为：To achieve the above object, the technical scheme adopted in the present invention is:
一种宽频带无源耐高温柔性振动传感器，所述的传感器自上而下分为五层，分别是耐高温Al2O3薄膜封装层、电容上极板和矩形电感线圈层、Al2O3薄膜介质层、电容的下极板层和作为基底的聚酰亚胺层；所述聚酰亚胺基底上沉积有电容下极板，所述电容下极板上沉积氧化铝介质层，所述氧化铝介质层上沉积有电容上极板和电感线圈，且电容上极板位于电感线圈的中心处，电容上极板和电感线圈上沉积有氧化铝封装层，所述氧化铝介质层上设有用于实现电容下极板和电感线圈电连接的通孔。A broadband passive high temperature flexible vibration sensor, the sensor is divided into five layers from top to bottom, which are high temperature resistant Al2 O3 film packaging layer, capacitor upper plate and rectangular inductance coil layer, Al2 O3. The thin film dielectric layer, the lower electrode plate layer of the capacitor and the polyimide layer as the base; the lower electrode plate of the capacitor is deposited on the polyimide base, and the aluminum oxide dielectric layer is deposited on the lower electrode plate of the capacitor, so A capacitor upper plate and an inductance coil are deposited on the aluminum oxide dielectric layer, and the capacitor upper plate is located at the center of the inductance coil, and an aluminum oxide packaging layer is deposited on the capacitor upper plate and the inductance coil. A through hole is provided for realizing the electrical connection between the lower electrode plate of the capacitor and the inductor coil.
进一步地，所述电感线圈的形状为矩形螺旋状。Further, the shape of the inductance coil is a rectangular spiral.
进一步地，宽频带无源耐高温柔性振动传感器的厚度≤200μm。Further, the thickness of the broadband passive high temperature flexible vibration sensor is less than or equal to 200 μm.
进一步地，电容上下极板和矩形电感线圈的厚度均≤10um，制备材料均为耐高温金属银。Further, the thicknesses of the upper and lower electrode plates of the capacitor and the rectangular inductance coil are both less than or equal to 10um, and the preparation materials are all high temperature resistant metallic silver.
进一步地，所述聚酰亚胺基底的厚度≤100um。Further, the thickness of the polyimide substrate is less than or equal to 100um.
进一步地，所述氧化铝介质层与氧化铝封装层的厚度均≤50um。Further, the thicknesses of the alumina dielectric layer and the alumina encapsulation layer are both ≤50um.
本发明还提供了上述一种宽频带无源耐高温柔性振动传感器的制备工艺，包括如下步骤：The present invention also provides a preparation process of the above-mentioned broadband passive high temperature flexible vibration sensor, comprising the following steps:
S1、柔性基底预处理S1, flexible substrate pretreatment
将聚酰亚胺基底依次在丙酮、乙醇和去离子水中进行超声清洗，并对清洗后的聚酰亚胺基底进行烘干处理；ultrasonically cleaning the polyimide substrate in acetone, ethanol and deionized water in sequence, and drying the cleaned polyimide substrate;
S2、电容下极板的制备S2. Preparation of the lower plate of the capacitor
电容下极板制备的主要过程为洁净的聚酰亚胺基底表面经涂胶、曝光、显影将电容下极板图形显示出，利用直流溅射工艺制备电容下极板薄膜，具体的制备工艺为：The main process of preparing the lower electrode plate of the capacitor is that the surface of the clean polyimide substrate is coated, exposed and developed to display the graph of the lower electrode plate of the capacitor, and the lower electrode plate film of the capacitor is prepared by the DC sputtering process. The specific preparation process is as follows: :
a.利用涂胶机在洁净的聚酰亚胺基底表面涂有一层均匀的光刻胶，并在100℃的烘干炉内烘干；a. Coat a uniform layer of photoresist on the surface of the clean polyimide substrate with a glue applicator, and dry it in a drying oven at 100 °C;
b.将制备好的电容下极板图形掩膜版置于涂有光刻胶一面的基底表面，利用曝光灯曝光3～5s，使掩模版的图形转移到基底表面；b. Place the prepared capacitor lower plate pattern mask on the substrate surface coated with the photoresist side, and expose it with an exposure lamp for 3 to 5s, so that the pattern of the mask plate is transferred to the substrate surface;
c.对曝光后的基底进行后烘处理以消除光阻层侧壁的驻波效应；c. Post-bake the exposed substrate to eliminate the standing wave effect on the sidewall of the photoresist layer;
d.将完成后烘处理后的基底置于显影液内浸泡5～10s，使基底表面图形完全显示出来；d. Soak the substrate after post-baking treatment in the developing solution for 5-10s, so that the surface pattern of the substrate is completely displayed;
e.将图形化基底与待溅射Ag靶材依次放入溅射室内的样品旋转台与靶源安装处，启动溅射电源与样品旋转台，在溅射室真空度低于2*10-4Pa，溅射功率为266.8W,溅射室工作气压为3Pa的条件下进行溅射加工，Ag靶材通过Ar+轰击出Ag粒子，沉积在聚酰亚胺表面形成金属银层，当金属银层的厚度达到10um时，关闭电源，停止溅射；e. Put the patterned substrate and the Ag target to be sputtered into the sample turntable and the target source installation place in the sputtering chamber in turn, start the sputtering power supply and the sample turntable, and the vacuum degree in the sputtering chamber is lower than 2*10- 4 Pa, the sputtering power is 266.8W, and the sputtering process is carried out under the condition that the working pressure of the sputtering chamber is 3Pa. The Ag target is bombarded with Ag particles by Ar+ , and deposited on the surface of the polyimide to form a metallic silver layer. When the thickness of the silver layer reaches 10um, turn off the power and stop sputtering;
f.利用丙酮清洗完成溅射的聚酰亚胺基底，去除基底剩余的光刻胶，同时利用去离子水清洗残留的丙酮溶液，空中静置干燥后，电容下极板制备完成；f. Use acetone to clean the sputtered polyimide substrate, remove the remaining photoresist on the substrate, and at the same time use deionized water to clean the residual acetone solution. After standing in the air to dry, the lower electrode plate of the capacitor is prepared;
S3、氧化铝介质层的制备S3. Preparation of Alumina Dielectric Layer
为了避免电容上极板与下极板直接接触，在电容下极板制备完成后，再其表面制备一层绝缘的氧化铝介质层，制备流程为以Al为靶材，O2为反应气体，采用射频溅射工艺制备完成，具体的流程为：In order to avoid direct contact between the upper electrode plate of the capacitor and the lower electrode plate, after the preparation of the lower electrode plate of the capacitor is completed, an insulating alumina dielectric layer is preparedon the surface. The preparation is completed by the radio frequency sputtering process, and the specific process is as follows:
a.在干净的电容下极板薄膜表面，利用涂胶、曝光、显影等工艺使光刻胶仅留在通孔处，以防绝缘的Al2O3将其填充而使电容下极板与电感线圈之间电气绝缘；a. On the surface of the clean capacitor lower plate film, the photoresist is only left at the through hole by applying glue, exposure, development and other processes to prevent the insulating Al2 O3 from filling it and making the capacitor lower plate and the capacitor lower plate. Electrical insulation between inductor coils;
b.在真空度为3*10-3Pa，工作气压为0.5Pa的溅射室内，以Al为靶材，O2为反应气体，在电容下极板表面采用射频溅射工艺制备厚度为50um的Al2O3薄膜介质层；b. In a sputtering chamber with a vacuum degree of 3*10-3 Pa and a working pressure of 0.5Pa, using Al as the target material and O2 as the reactive gas, the surface of the electrode plate under the capacitor is prepared by radio frequency sputtering with a thickness of 50um Al2 O3 thin film dielectric layer;
c.Al2O3薄膜介质层溅射完成后，利用丙酮、去离子水依次清洗基底表面，去除剩余光刻胶与残留的丙酮溶液，干燥后，Al2O3薄膜介质层制备完毕；c. After the Al2 O3 thin film dielectric layer is sputtered, use acetone and deionized water to clean the substrate surface in turn to remove the remaining photoresist and the residual acetone solution, and after drying, the Al2 O3 thin film dielectric layer is prepared;
S4、电容上极板与电感线圈薄膜的制备S4. Preparation of capacitor upper plate and inductor coil film
电容上极板与电感线圈薄膜的制备工艺与电容下极板的制备工艺一致，即在氧化铝介质层表面，以Ag为溅射靶材，Ar为溅射气体，采用直流溅射工艺制备10um厚的金属Ag薄膜，并完成通孔内金属Ag的填充，实现电容下极板与电感线圈外端的电连接，并对溅射后的薄膜表面进行清洗，去除薄膜表面多余的光刻胶与残留有机溶液，清洗后，电容上极板与电感线圈薄膜制备完成；The preparation process of the capacitor upper plate and the inductor coil film is the same as the preparation process of the capacitor lower plate, that is, on the surface of the alumina dielectric layer, Ag is used as the sputtering target, Ar is used as the sputtering gas, and 10um is prepared by DC sputtering process. Thick metal Ag film, and complete the filling of metal Ag in the through hole to realize the electrical connection between the lower plate of the capacitor and the outer end of the inductor coil, and clean the surface of the film after sputtering to remove excess photoresist and residue on the surface of the film Organic solution, after cleaning, the capacitor upper plate and the inductor coil film are prepared;
S5、氧化铝封装层的制备S5. Preparation of alumina encapsulation layer
为了避免传感器的电容、电感与工作环境直接接触，在传感器的最上表面制备一层耐高温的氧化铝薄膜作封装层，具体制备工艺同氧化铝介质层，在电容上极板和LC导电连接层表面，以Al为靶材，O2为反应气体，采用射频溅射工艺制备厚度为50um的Al2O3薄膜介质层，并对溅射后的薄膜介质层表面进行清洗，去除薄膜介质层表面多余的光刻胶与残留有机溶液，清洗后，氧化铝封装层制备完成。In order to avoid direct contact between the capacitance and inductance of the sensor and the working environment, a high temperature-resistant alumina film is prepared on the top surface of the sensor as an encapsulation layer. The specific preparation process is the same as that of the alumina dielectric layer. On the surface, using Al as the target material and O2 as the reactive gas, the Al2 O3 thin film dielectric layer with a thickness of 50um was prepared by the radio frequency sputtering process, and the surface of the thin film dielectric layer after sputtering was cleaned to remove the surface of the thin film dielectric layer. After cleaning the excess photoresist and residual organic solution, the aluminum oxide encapsulation layer is prepared.
本发明具有以下有益效果：The present invention has the following beneficial effects:
针对传统振动传感器在大型装备中的应用局限，本发明选用聚酰亚胺柔性材料作基底，可以完全附着于异形构件表面，在大型装备工作中不易受振脱落，能够实现异形构件表面振动参数的动态精准测量。Aiming at the application limitations of traditional vibration sensors in large-scale equipment, the present invention selects polyimide flexible material as the base, which can be completely attached to the surface of special-shaped components, is not easy to be vibrated and fall off during the operation of large-scale equipment, and can realize the dynamic change of vibration parameters on the surface of special-shaped components. Precise measurement.
选用耐高温金属Ag作导电材料，耐高温陶瓷Al2O3作介质与封装材料，可以使传感器在高温环境下正常稳定地工作。The high temperature resistant metal Ag is used as the conductive material, and the high temperature resistant ceramic Al2 O3 is used as the medium and packaging material, so that the sensor can work normally and stably in a high temperature environment.
无线非接触地测量原理避免了传统高温振动传感器的引线使用，使传感器更适用于特殊环境，拓宽了传感器的应用范围。The wireless non-contact measurement principle avoids the use of lead wires of traditional high-temperature vibration sensors, making the sensor more suitable for special environments and broadening the application range of the sensor.
在特殊环境下，本发明的无源耐高温振动传感器能够精准实现宽频带的振动参数测量。Under special circumstances, the passive high-temperature-resistant vibration sensor of the present invention can accurately measure vibration parameters in a wide frequency band.
附图说明Description of drawings
图1为本发明实施例一种宽频带无源耐高温柔性振动传感器的制备工艺流程图。FIG. 1 is a flow chart of a manufacturing process of a broadband passive high temperature flexible vibration sensor according to an embodiment of the present invention.
图2为本发明实施例一种宽频带无源耐高温柔性振动传感器的剖面图。2 is a cross-sectional view of a broadband passive high temperature flexible vibration sensor according to an embodiment of the present invention.
图3为本发明实施例一种宽频带无源耐高温柔性振动传感器工作原理图。FIG. 3 is a working principle diagram of a broadband passive high temperature flexible vibration sensor according to an embodiment of the present invention.
具体实施方式Detailed ways
下面结合具体实施例对本发明进行详细说明。以下实施例将有助于本领域的技术人员进一步理解本发明，但不以任何形式限制本发明。应当指出的是，对本领域的普通技术人员来说，在不脱离本发明构思的前提下，还可以做出若干变形和改进。这些都属于本发明的保护范围。The present invention will be described in detail below with reference to specific embodiments. The following examples will help those skilled in the art to further understand the present invention, but do not limit the present invention in any form. It should be noted that, for those skilled in the art, several modifications and improvements can be made without departing from the concept of the present invention. These all belong to the protection scope of the present invention.
如图1所示，本发明实施例提供了一种宽频带无源耐高温柔性振动传感器，所述的传感器自上而下分为五层，分别是耐高温Al2O3薄膜封装层、电容上极板和矩形电感线圈层、Al2O3薄膜介质层、电容的下极板层和作为基底的聚酰亚胺层。所述聚酰亚胺基底1上沉积有电容下极板2，所述电容下极板2上沉积氧化铝介质层3，所述氧化铝介质层3上沉积有电容上极板5和电感线圈4，且电容上极板位于电感线圈的中心处，电容上极板5和电感线圈4上沉积有氧化铝封装层6；所述氧化铝介质层上设有用于实现电容下极板和电感线圈电连接的通孔7。其中，电容极板与电感线圈的制备材料为耐高温金属Ag，氧化铝介质层薄膜是为了使电容上下极板之间没有电气连接，氧化铝封装层薄膜是为了保护电感电容。As shown in FIG. 1 , an embodiment of the present invention provides a broadband passive high temperature flexible vibration sensor. The sensor is divided into five layers from top to bottom, which are a high temperature resistant Al2 O3 thin film encapsulation layer, a capacitor The upper plate and the rectangular inductor coil layer, the Al2 O3 thin film dielectric layer, the lower plate layer of the capacitor and the polyimide layer as the base. A capacitor lower plate 2 is deposited on the polyimide substrate 1, an aluminum oxide dielectric layer 3 is deposited on the capacitor lower plate 2, and a capacitor upper plate 5 and an inductor coil are deposited on the aluminum oxide dielectric layer 3. 4, and the capacitor upper plate is located at the center of the inductance coil, and an aluminum oxide encapsulation layer 6 is deposited on the capacitor upper plate 5 and the inductance coil 4; Vias 7 for electrical connection. Among them, the preparation material of the capacitor plate and the inductor coil is high temperature resistant metal Ag, the aluminum oxide dielectric layer film is to make no electrical connection between the upper and lower electrode plates of the capacitor, and the aluminum oxide encapsulation layer film is to protect the inductor and capacitor.
如图2所示，所述柔性聚酰亚胺基底的厚度为100um，氧化铝介质层和氧化铝封装层的厚度均为50um，所述电感线圈的形状为矩形螺旋状，矩形电感线圈和电容上下极板的厚度均为10um，制备材料均为耐高温金属银；本发明宽频带无源耐高温柔性振动传感器的测试原理图如图3所示，制备完成的振动传感器附着在大型装备异形构件表面，当其工作时，大型装备内部气流导致异构件发生微小振动，使大型装备异形构件与读取天线之间的距离发生变化，导致传感器的等效电感L变化，进而使传感器的谐振频率发生变化，通过与读取天线之间的非接触耦合传输到置于低温环境下的后端处理模块，通过推导、求解后端处理模块内的数据，即可实现异构件表面振动参数(位移d、速度v及加速度a)的精准测量。As shown in FIG. 2 , the thickness of the flexible polyimide substrate is 100um, the thickness of the aluminum oxide dielectric layer and the aluminum oxide encapsulation layer are both 50um, the shape of the inductance coil is a rectangular spiral, rectangular inductance coil and capacitor The thickness of the upper and lower plates is 10um, and the preparation materials are high temperature resistant metal silver; the test principle diagram of the broadband passive high temperature flexible vibration sensor of the present invention is shown in Figure 3, and the prepared vibration sensor is attached to the large-scale equipment special-shaped component On the surface, when it is working, the air flow inside the large equipment causes the micro-vibration of the abnormal components, which makes the distance between the special-shaped components of the large equipment and the reading antenna change, resulting in the change of the equivalent inductance L of the sensor, and then the resonant frequency of the sensor. If the change occurs, it is transmitted to the back-end processing module placed in a low temperature environment through the non-contact coupling with the reading antenna. d. Accurate measurement of velocity v and acceleration a).
本发明实施例还提供了上述一种宽频带无源耐高温柔性振动传感器的制备工艺，包括如下步骤：The embodiment of the present invention also provides a preparation process of the above-mentioned broadband passive high temperature flexible vibration sensor, including the following steps:
S1、柔性基底预处理S1, flexible substrate pretreatment
将聚酰亚胺基底依次在丙酮、乙醇和去离子水中进行超声清洗，并对清洗后的聚酰亚胺基底进行烘干处理；ultrasonically cleaning the polyimide substrate in acetone, ethanol and deionized water in sequence, and drying the cleaned polyimide substrate;
S2、电容下极板的制备S2. Preparation of the lower plate of the capacitor
电容下极板制备的主要过程为洁净的聚酰亚胺基底表面经涂胶、曝光、显影将电容下极板图形显示出，利用直流溅射工艺制备电容下极板薄膜，具体的制备工艺为：The main process of preparing the lower electrode plate of the capacitor is that the surface of the clean polyimide substrate is coated, exposed and developed to display the graph of the lower electrode plate of the capacitor, and the lower electrode plate film of the capacitor is prepared by the DC sputtering process. The specific preparation process is as follows: :
a.利用涂胶机在洁净的聚酰亚胺基底表面涂有一层均匀的光刻胶，并在100℃的烘干炉内烘干；a. Coat a uniform layer of photoresist on the surface of the clean polyimide substrate with a glue applicator, and dry it in a drying oven at 100 °C;
b.将制备好的电容下极板图形掩膜版置于涂有光刻胶一面的基底表面，利用曝光灯曝光3～5s，使掩模版的图形转移到基底表面；b. Place the prepared capacitor lower plate pattern mask on the substrate surface coated with the photoresist side, and expose it with an exposure lamp for 3 to 5s, so that the pattern of the mask plate is transferred to the substrate surface;
c.对曝光后的基底进行后烘处理以消除光阻层侧壁的驻波效应；c. Post-bake the exposed substrate to eliminate the standing wave effect on the sidewall of the photoresist layer;
d.将完成后烘处理后的基底置于显影液内浸泡5～10s，使基底表面图形完全显示出来；d. Soak the substrate after post-baking treatment in the developing solution for 5-10s, so that the surface pattern of the substrate is completely displayed;
e.将图形化基底与待溅射Ag靶材放入溅射室内的样品旋转台与靶源安装处，启动溅射电源与样品旋转台，在溅射室真空度低于2*10-4Pa，溅射功率为266.8W,溅射室工作气压为3Pa的条件下进行溅射加工，Ag靶材通过Ar+轰击出Ag粒子，沉积在聚酰亚胺表面形成金属银层，当金属银层的厚度达到10um时，关闭电源，停止溅射；e. Put the patterned substrate and the Ag target to be sputtered into the sample turntable and the target source installation in the sputtering chamber, start the sputtering power supply and the sample turntable, and the vacuum degree in the sputtering chamber is lower than 2*10-4 Pa, the sputtering power is 266.8W, and the sputtering process is performed under the condition that the working pressure of the sputtering chamber is 3Pa. The Ag target is bombarded with Ag particles by Ar+ , and deposited on the surface of the polyimide to form a metallic silver layer. When the thickness of the layer reaches 10um, turn off the power and stop sputtering;
f.利用丙酮清洗完成溅射后的聚酰亚胺基底，去除基底剩余的光刻胶，同时利用去离子水清洗残留的丙酮溶液，空中静置干燥，电容下极板制备完成；f. Use acetone to clean the polyimide substrate after sputtering, remove the remaining photoresist on the substrate, and at the same time use deionized water to clean the residual acetone solution, let it dry in the air, and complete the preparation of the lower electrode plate of the capacitor;
S3、氧化铝介质层的制备S3. Preparation of Alumina Dielectric Layer
为了避免电容上极板与下极板直接接触，在电容下极板制备完成后，再其表面制备一层绝缘的氧化铝介质层，制备流程为以Al为靶材，O2为反应气体，采用射频溅射工艺制备完成，具体的流程为：In order to avoid direct contact between the upper electrode plate of the capacitor and the lower electrode plate, after the preparation of the lower electrode plate of the capacitor is completed, an insulating alumina dielectric layer is preparedon the surface. The preparation is completed by the radio frequency sputtering process, and the specific process is as follows:
a.在干净的电容下极板薄膜表面，利用涂胶、曝光、显影等工艺使光刻胶仅留在通孔处，以防绝缘的Al2O3将其填充而使电容下极板与电感线圈之间电气绝缘；a. On the surface of the clean capacitor lower plate film, the photoresist is only left at the through hole by applying glue, exposure, development and other processes to prevent the insulating Al2 O3 from filling it and making the capacitor lower plate and the capacitor lower plate. Electrical insulation between inductor coils;
b.在真空度为3*10-3Pa，工作气压为0.5Pa的溅射室内，以Al为靶材，O2为反应气体，在电容下极板表面采用射频溅射工艺制备厚度为50um的Al2O3薄膜介质层；b. In a sputtering chamber with a vacuum degree of 3*10-3 Pa and a working pressure of 0.5Pa, using Al as the target material and O2 as the reactive gas, the surface of the electrode plate under the capacitor is prepared by radio frequency sputtering with a thickness of 50um Al2 O3 thin film dielectric layer;
c.Al2O3薄膜介质层溅射完成后，利用丙酮、去离子水依次清洗基底表面，去除通孔处的光刻胶与残留的丙酮溶液，干燥后，Al2O3薄膜介质层制备完毕；c. After the sputtering of the Al2 O3 thin film dielectric layer is completed, use acetone and deionized water to clean the surface of the substrate in turn to remove the photoresist and the residual acetone solution at the through holes. After drying, the Al2 O3 thin film dielectric layer is prepared complete;
S4、电容上极板与电感线圈薄膜的制备S4. Preparation of capacitor upper plate and inductor coil film
电容上极板与电感线圈薄膜的制备工艺与电容下极板的制备工艺一致，即在氧化铝介质层表面，以Ag为溅射靶材，Ar为溅射气体，采用直流溅射工艺制备10um厚的金属Ag薄膜，并完成通孔内金属Ag的填充，实现电容下极板与电感线圈外端的电连接，并对溅射后的薄膜表面进行清洗，去除薄膜表面多余的光刻胶与残留有机溶液，清洗后，电容上极板与电感线圈薄膜制备完成；The preparation process of the capacitor upper plate and the inductor coil film is the same as the preparation process of the capacitor lower plate, that is, on the surface of the alumina dielectric layer, Ag is used as the sputtering target, Ar is used as the sputtering gas, and 10um is prepared by DC sputtering process. Thick metal Ag film, and complete the filling of metal Ag in the through hole to realize the electrical connection between the lower plate of the capacitor and the outer end of the inductor coil, and clean the surface of the film after sputtering to remove excess photoresist and residue on the surface of the film Organic solution, after cleaning, the capacitor upper plate and the inductor coil film are prepared;
S5、氧化铝封装层的制备S5. Preparation of alumina encapsulation layer
为了避免传感器的电容、电感与工作环境直接接触，在传感器的最上表面制备一层耐高温的氧化铝薄膜作封装层。具体制备工艺同氧化铝介质层，在电容上极板和LC导电连接层表面，以Al为靶材，O2为反应气体，采用射频溅射工艺制备厚度为50um的Al2O3薄膜介质层，并对溅射后的薄膜介质层表面进行清洗，去除薄膜介质层表面多余的光刻胶与残留有机溶液，清洗后，氧化铝封装层制备完成。In order to avoid direct contact between the capacitance and inductance of the sensor and the working environment, a layer of high temperature resistant alumina film is prepared on the top surface of the sensor as an encapsulation layer. The specific preparation process is the same as that of the alumina dielectric layer. On the surface of the capacitor upper plate and the LC conductive connection layer, using Al as the target material and O2 as the reactive gas, the Al2 O3 thin film dielectric layer with a thickness of 50um is prepared by the radio frequency sputtering process. and cleaning the surface of the thin film dielectric layer after sputtering, removing excess photoresist and residual organic solution on the surface of the thin film dielectric layer, and after cleaning, the preparation of the aluminum oxide encapsulation layer is completed.
以上对本发明的具体实施例进行了描述。需要理解的是，本发明并不局限于上述特定实施方式，本领域技术人员可以在权利要求的范围内做出各种变化或修改，这并不影响本发明的实质内容。在不冲突的情况下，本申请的实施例和实施例中的特征可以任意相互组合。Specific embodiments of the present invention have been described above. It should be understood that the present invention is not limited to the above-mentioned specific embodiments, and those skilled in the art can make various changes or modifications within the scope of the claims, which do not affect the essential content of the present invention. The embodiments of the present application and features in the embodiments may be combined with each other arbitrarily, provided that there is no conflict.
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| CN201910571554.XACN110230031B (en) | 2019-06-28 | 2019-06-28 | A broadband passive high temperature flexible vibration sensor and its preparation process |
| CN202110248396.1ACN113025975B (en) | 2019-06-28 | 2019-06-28 | Preparation process of passive MEMS sensor for complex component surface vibration measurement |
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| CN202110248396.1AExpired - Fee RelatedCN113025975B (en) | 2019-06-28 | 2019-06-28 | Preparation process of passive MEMS sensor for complex component surface vibration measurement |
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