技术领域technical field
本发明涉及高温测试技术领域，具体涉及一种石墨烯高温温度传感器。The invention relates to the technical field of high-temperature testing, in particular to a graphene high-temperature temperature sensor.
背景技术Background technique
随着科技的发展进步，在众多领域对于温度参数的监控与测量技术需求日渐增大，尤其是长时间高温恶劣环境下的温度参数的获取仍是需要完善的科学技术。例如在汽车发动机、航空发动机、重型燃气轮机等设备的主要部件就处在复杂的高温恶劣环境，这就需要利用传感器对燃烧室这样的关键部位的温度参数进行实时监控，来提高燃烧性能和评估部件的健康状况。With the development and progress of science and technology, the demand for monitoring and measurement technology of temperature parameters is increasing in many fields, especially the acquisition of temperature parameters in long-term high-temperature and harsh environments still needs perfect science and technology. For example, the main components of automobile engines, aero engines, heavy-duty gas turbines and other equipment are in complex high-temperature and harsh environments, which requires the use of sensors to monitor the temperature parameters of key parts such as combustion chambers in real time to improve combustion performance and evaluate components health status.
近年来，国内外众多的单位和学者对高温温度传感器进行了大量的研究和产品开发。综合温度测量的应用现状，根据测量方式可以分为接触式和非接触式两大类，其中接触式主要有热电偶式温度传感器、电阻式温度传感器；非接触式温度传感器主要有红外温度传感器和辐射温度传感器。本专利所述石墨烯温度传感器的本质其实是电阻式温度传感器，电阻式温度传感器又可分为金属电阻式温度传感器以及半导体电阻式温度传感器。金属电阻式温度传感器使用材料主要有铂、金、铜、镍等纯金属材料，以及磷青铜等合金；半导体温度式传感器材料则主要采用碳、锗、陶瓷等。In recent years, many units and scholars at home and abroad have carried out a lot of research and product development on high-temperature temperature sensors. The application status of comprehensive temperature measurement can be divided into two categories: contact type and non-contact type according to the measurement method. The contact type mainly includes thermocouple temperature sensor and resistance temperature sensor; the non-contact temperature sensor mainly includes infrared temperature sensor and Radiation temperature sensor. The essence of the graphene temperature sensor described in this patent is actually a resistive temperature sensor, and the resistive temperature sensor can be divided into a metal resistive temperature sensor and a semiconductor resistive temperature sensor. Metal resistance temperature sensors mainly use pure metal materials such as platinum, gold, copper, nickel, and alloys such as phosphor bronze; semiconductor temperature sensor materials mainly use carbon, germanium, ceramics, etc.
就目前而言，电阻式温度传感器仍是较为精确的温度传感器，目前的使用温区一般是1K～1000K左右，其差可低到万分之一摄氏度，并且它的精度极高，性能也稳定，但是缺点在于热惯性较大，响应时间较长。由于金属材料本身的限制，所以金属材料的电阻式温度传感器普遍测温区间较低，没办法完成恶劣高温环境下的测量，因此研究一种新型半导体材料的电阻式温度传感器来提高温度区间以及响应时间同时保证其精度是目前急需的科学技术。For now, the resistive temperature sensor is still a relatively accurate temperature sensor. The current temperature range is generally about 1K ~ 1000K, and the difference can be as low as one ten thousandth of a degree Celsius. It has extremely high precision and stable performance. , but the disadvantage is that the thermal inertia is large and the response time is long. Due to the limitation of the metal material itself, the resistance temperature sensor of the metal material generally has a low temperature measurement range, and there is no way to complete the measurement in the harsh high-temperature environment. Therefore, a new type of resistance temperature sensor of semiconductor material is studied to improve the temperature range and response. Time while ensuring its accuracy is an urgently needed science and technology.
随着科学的进步与发展，石墨烯材料横空出世，它以其优秀的电学、热学、力学和化学性质成为现今制造各种纳米传感器的良好材料。实验测试表明石墨烯可以稳定存在于3000℃的无氧高温环境中，氮化硼纳米薄膜可工作在2800℃的无氧环境，两者均具有良好的耐高温特性。氮化硼具有与石墨烯相似的晶格结构，将石墨烯夹在两层氮化硼中，可以为石墨烯提供绝氧、隔绝杂质的保护和平整的介质层；此外衬底选择α-Al2O3，正常使用温度也可达2030℃，因此进行无氧环境封装后的纳米薄膜可以稳定工作于1000℃以上的恶劣环境。同时石墨烯材料还拥有高达5300W/(m·K)的热导率，所以它对于温度的响应时间非常短。With the progress and development of science, graphene material has been born out of nowhere, and it has become a good material for manufacturing various nanometer sensors due to its excellent electrical, thermal, mechanical and chemical properties. Experimental tests show that graphene can stably exist in an oxygen-free high-temperature environment of 3000 ° C, and boron nitride nano-films can work in an oxygen-free environment of 2800 ° C, both of which have good high-temperature resistance characteristics. Boron nitride has a lattice structure similar to graphene, and graphene is sandwiched between two layers of boron nitride, which can provide graphene with protection from oxygen, impurities and a flat dielectric layer; in addition, the substrate chooses α-Al2 O3 , the normal operating temperature can reach 2030°C, so the nano-film encapsulated in an oxygen-free environment can work stably in a harsh environment above 1000°C. At the same time, graphene material also has a thermal conductivity as high as 5300W/(m·K), so its response time to temperature is very short.
利用石墨烯材料代替金属材料和其它半导体材料，实现在恶劣高温环境下的温度测量，是目前最为前沿的科学技术，是世界科技界予以探索的技术领域。Using graphene materials instead of metal materials and other semiconductor materials to achieve temperature measurement in harsh high-temperature environments is currently the most cutting-edge science and technology, and it is a technical field to be explored by the world's scientific and technological circles.
发明内容Contents of the invention
为了有效解决上述背景技术问题的不足，利用石墨烯材料代替金属材料和其它半导体材料，设计了一种基于石墨烯的高温温度传感器。石墨烯薄膜受温度影响电学特性发生改变，具体是温度改变了石墨烯薄膜的电导率，然后通过外部检测电路检测石墨烯薄膜电导率的变化来实现对温度的测量。In order to effectively solve the deficiencies of the above-mentioned background technical problems, a graphene-based high-temperature temperature sensor is designed by using graphene materials instead of metal materials and other semiconductor materials. The electrical properties of the graphene film are affected by the temperature. Specifically, the temperature changes the conductivity of the graphene film, and then the temperature is measured by detecting the change in the conductivity of the graphene film through an external detection circuit.
所述高温温度传感器的具体发明内容包括：一种石墨烯高温温度传感器，所述温度传感器处于1700℃～2000℃的高温下稳定工作，所述传感器具体包括：The specific content of the invention of the high-temperature temperature sensor includes: a graphene high-temperature temperature sensor, the temperature sensor works stably at a high temperature of 1700°C to 2000°C, and the sensor specifically includes:
至少一个封装外壳，所述封装外壳内部上下两端分别设置有一个陶瓷基板、及一个衬底，所述陶瓷基板、所述衬底及所述封装外壳共同界定一个检测空间；At least one packaging case, the upper and lower ends of the packaging case are respectively provided with a ceramic substrate and a substrate, and the ceramic substrate, the substrate and the packaging case jointly define a detection space;
至少一个检测单元，所述检测单元设置在所述检测空间内，所述检测单元包括至少一个氮化硼/石墨烯/氮化硼纳米薄膜、及至少两个金属电极，所述衬底面向所述陶瓷基板的一面设置所述氮化硼/石墨烯/氮化硼纳米薄膜，所述金属电极接设于所述氮化硼/石墨烯/氮化硼纳米薄膜上，并通过衬底传导热量至所述氮化硼/石墨烯/氮化硼纳米薄膜感受外部温度变化。At least one detection unit, the detection unit is arranged in the detection space, the detection unit includes at least one boron nitride/graphene/boron nitride nano film, and at least two metal electrodes, the substrate faces the One side of the ceramic substrate is provided with the boron nitride/graphene/boron nitride nano film, the metal electrode is connected to the boron nitride/graphene/boron nitride nano film, and conducts heat through the substrate The boron nitride/graphene/boron nitride nano-film senses the external temperature change.
进一步地，所述检测空间为一个能够将氮化硼/石墨烯/氮化硼纳米薄膜与外部空气隔离的无氧真空腔。Further, the detection space is an oxygen-free vacuum chamber capable of isolating the boron nitride/graphene/boron nitride nanofilm from the outside air.
进一步地，所述衬底相反于陶瓷基板的一侧面刻蚀有许多小孔形成的多孔结构，在所述衬底相反于多孔结构的一面布置所述氮化硼/石墨烯/氮化硼纳米薄膜，并所述氮化硼/石墨烯/氮化硼纳米薄膜的面积小于整个所述衬底的面积。Further, a porous structure formed by many small holes is etched on the side of the substrate opposite to the ceramic substrate, and the boron nitride/graphene/boron nitride nanometers are arranged on the side of the substrate opposite to the porous structure. film, and the area of the boron nitride/graphene/boron nitride nano film is smaller than the area of the entire substrate.
进一步地，在所述衬底相反于多孔结构的一面周侧通过密封环支撑在所述陶瓷基板上侧面，所述陶瓷基板、衬底及密封环构成所述无氧真空，所述无氧真空腔内可填充惰性、热膨胀系数较小的气体。Further, the side of the substrate opposite to the porous structure is supported on the upper side of the ceramic substrate by a sealing ring, the ceramic substrate, the substrate and the sealing ring constitute the oxygen-free vacuum, and the oxygen-free vacuum The cavity can be filled with an inert gas with a small thermal expansion coefficient.
进一步地，所述封装外壳与陶瓷基板相连并粘结牢固。Further, the packaging shell is connected to the ceramic substrate and bonded firmly.
进一步地，所述氮化硼/石墨烯/氮化硼纳米薄膜包括上层氮化硼层、下层氮化硼层及夹在其中的单层石墨烯。Further, the boron nitride/graphene/boron nitride nano film comprises an upper boron nitride layer, a lower boron nitride layer and a single layer of graphene sandwiched therein.
进一步地，所述金属电极包括分别连接所述纳米膜两端的第一金属电极及第二金属电极，所述第一金属电极依次通过第一互连凸点、第一互连焊盘及第一引线柱连接外部检测组件；所述第二金属电极依次通过第二互连凸点、第二互连焊盘及第二引线柱连接外部检测组件。Further, the metal electrode includes a first metal electrode and a second metal electrode respectively connected to both ends of the nano-membrane, and the first metal electrode passes through the first interconnection bump, the first interconnection pad and the first interconnection pad in sequence. The lead post is connected to the external detection component; the second metal electrode is connected to the external detection component through the second interconnection bump, the second interconnection pad and the second lead post in sequence.
进一步地，在所述第一金属电极、第二金属电极、密封环与衬底之间均相应的设置有阻挡层。Further, a barrier layer is correspondingly provided between the first metal electrode, the second metal electrode, the sealing ring and the substrate.
进一步地，所述下层氮化硼、及石墨烯层贴覆在所述第一金属电极、第二金属电极的一侧面，所述上层石墨烯两端与所述阻挡层接触设置。Further, the lower layer of boron nitride and the graphene layer are attached to one side of the first metal electrode and the second metal electrode, and both ends of the upper layer of graphene are arranged in contact with the barrier layer.
本发明与背景技术相比具有明显的先进性，器件在原有电阻式温度传感器基础上，利用包含石墨烯的纳米膜替代其它金属材料或者半导体材料，大大的提高了电阻式温度传感器的测温区间，并且通过石墨烯材料的高热导率，有效的提高了器件的响应速度。同时，石墨烯被氮化硼纳米薄膜夹在中间，有效的消除了周围环境中的干扰因素，而无氧封装则提升了器件的耐高温能力以及稳定性，可应用于及其恶劣的高温测试环境，是十分理想的高温温度传感器。Compared with the background technology, the present invention has obvious advancement. On the basis of the original resistive temperature sensor, the device uses a nano-film containing graphene to replace other metal materials or semiconductor materials, which greatly improves the temperature measurement range of the resistive temperature sensor. , and through the high thermal conductivity of the graphene material, the response speed of the device is effectively improved. At the same time, the graphene is sandwiched by the boron nitride nano-film, which effectively eliminates the interference factors in the surrounding environment, and the oxygen-free packaging improves the high-temperature resistance and stability of the device, which can be applied to extremely harsh high-temperature tests It is an ideal high temperature temperature sensor.
附图说明Description of drawings
图1为本发明实施例的外观立体示意图；Fig. 1 is the three-dimensional schematic diagram of the appearance of the embodiment of the present invention;
图2为本发明实施例的整体结构截面图；Fig. 2 is the overall structural sectional view of the embodiment of the present invention;
图3为本发明实施例的芯片整体结构图；Fig. 3 is the overall structural diagram of the chip of the embodiment of the present invention;
图4为本发明实施例的芯片结构仰视图；Fig. 4 is the bottom view of the chip structure of the embodiment of the present invention;
图5为本发明实施例的石墨烯温敏结构图；Fig. 5 is the graphene temperature-sensitive structural diagram of the embodiment of the present invention;
图6为本发明实施例的石墨烯温敏结构俯视图；Fig. 6 is the top view of the graphene temperature-sensitive structure of the embodiment of the present invention;
图7为本发明实施例的石墨烯温敏结构截面图；Fig. 7 is the sectional view of graphene temperature-sensitive structure of the embodiment of the present invention;
图中所示，附图标记清单如下：As shown in the figure, the list of reference signs is as follows:
1、氮化硼/石墨烯/氮化硼纳米薄膜；2、第一互连凸点；3、第二互连凸点；4、第一密封环；5、第二密封环；6、衬底；7、互连焊盘；8、封装外壳；9、陶瓷基板；10、第一引线柱；11、第二引线柱；12、第一阻挡层；13、第二阻挡层；14、第三阻挡层；15、第四阻挡层；16、上层氮化硼层；17、下层氮化硼层；18、石墨烯层；19、无氧真空腔；20、互连焊盘；21、第一金属电极；22、第二金属电极；23、第一外部互连电极；24、第二外部互连电极。1. Boron nitride/graphene/boron nitride nano film; 2. The first interconnection bump; 3. The second interconnection bump; 4. The first sealing ring; 5. The second sealing ring; 6. Lining Bottom; 7. Interconnect pad; 8. Encapsulation shell; 9. Ceramic substrate; 10. First lead post; 11. Second lead post; 12. First barrier layer; 13. Second barrier layer; 14. Second lead post Three barrier layers; 15, fourth barrier layer; 16, upper boron nitride layer; 17, lower boron nitride layer; 18, graphene layer; 19, oxygen-free vacuum chamber; 20, interconnect pad; 21, the first A metal electrode; 22, a second metal electrode; 23, a first external interconnection electrode; 24, a second external interconnection electrode.
具体实施方式Detailed ways
下面详细描述本发明的实施例，所述实施例的示例在附图中示出，其中自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描述的实施例是示例性的，仅用于解释本发明，而不能理解为对本发明的限制。Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals designate the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary only for explaining the present invention and should not be construed as limiting the present invention.
在本发明的描述中，需要理解的是，术语“中心”、“上”、“下”、“前”、“后”、“左”、“右”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的组合或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。另外，本发明实施例的描述过程中，所有图中的“上”、“下”、“前”、“后”、“左”、“右”等器件位置关系，均以图1为标准。In the description of the present invention, it should be understood that the orientations or positional relationships indicated by the terms "center", "upper", "lower", "front", "rear", "left", "right" etc. are based on the attached The orientation or positional relationship shown in the figure is only for the convenience of describing the present invention and simplifying the description, and does not indicate or imply that the referred combination or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be interpreted as a reference to this invention. Invention Limitations. In addition, in the description process of the embodiment of the present invention, the positional relationship of devices such as "upper", "lower", "front", "rear", "left", "right" in all figures is based on Figure 1.
在本发明的描述中，需要说明的是，除非另有明确的规定和限定，术语“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通。对于本领域的普通技术人员而言，可以具体情况理解上述术语在本发明中的具体含义。In the description of the present invention, it should be noted that unless otherwise specified and limited, the terms "connected" and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral Ground connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediary, and it can be the internal communication of two components. Those of ordinary skill in the art can understand the specific meanings of the above terms in the present invention in specific situations.
以下结合附图对本发明做进一步说明：The present invention will be further described below in conjunction with accompanying drawing:
如图1所示，为本发明第一实施例的外观立体图，提供一种基于石墨烯的高温温度传感器，所述传感器包括至少一个封装外壳8、及至少一个检测单元，所述封装外壳8整体可以为圆柱体、立方体、长方体等形状，并不做具体限定，本发明附图中，仅示出了圆柱体结构，所述封装外壳8上部为网状结构，并在其下端设置好传感器芯片，陶瓷基板9及衬底6共同界定一个内部检测空间，所述检测单元设置在所述内部检测空间内。As shown in Figure 1, it is a perspective view of the appearance of the first embodiment of the present invention, providing a graphene-based high-temperature temperature sensor, the sensor includes at least one packaging shell 8, and at least one detection unit, and the packaging shell 8 as a whole It can be in the shape of a cylinder, a cube, a cuboid, etc., and is not specifically limited. In the accompanying drawings of the present invention, only a cylinder structure is shown. The upper part of the packaging shell 8 is a mesh structure, and a sensor chip is arranged at its lower end. , The ceramic substrate 9 and the substrate 6 jointly define an internal detection space, and the detection unit is arranged in the internal detection space.
如图2、3所示，为本发明第一实施例的整体结构截面图及芯片截面图，在所述内部检测空间的底部设置有一个陶瓷基板9，所述陶瓷基板9外周侧与所述封装外壳8内侧面相互接设。As shown in Figures 2 and 3, they are the overall structure cross-sectional view and the chip cross-sectional view of the first embodiment of the present invention, a ceramic substrate 9 is arranged at the bottom of the internal detection space, and the outer peripheral side of the ceramic substrate 9 is connected to the The inner surfaces of the packaging shells 8 are connected to each other.
所述检测单元置于所述内部检测空间内，并具体设置在所述陶瓷基板9面向内部检测空间的一侧，所述检测单元包括氮化硼/石墨烯/氮化硼纳米薄膜1、金属电极，所述氮化硼/石墨烯/氮化硼纳米薄膜1在本发明中还可以理解为纳米膜；The detection unit is placed in the internal detection space, and is specifically arranged on the side of the ceramic substrate 9 facing the internal detection space, and the detection unit includes a boron nitride/graphene/boron nitride nano-film 1, a metal Electrode, the boron nitride/graphene/boron nitride nano film 1 can also be understood as a nano film in the present invention;
在本实施例中，所述温度传感器包括：纳米膜、互连电极、衬底6、密封环、封装外壳8、陶瓷基板9、引线柱。在陶瓷基板9上表面通过密封环设置衬底6，衬底6下表面设有纳米膜，通过无氧封装工艺，为纳米膜提供无氧真空环境，所述纳米膜包括氮化硼/石墨烯/氮化硼纳米薄膜。金属电极通过布线与互连电极相连，互连电极通过引线柱穿过陶瓷基板将检测单元与外部检测电路相连，用于传递氮化硼/石墨烯/氮化硼纳米薄膜对于温度信号的电学响应。互连电极由互连凸点互连焊盘键合构成，封装外壳8与陶瓷基板9相连并粘接牢固。In this embodiment, the temperature sensor includes: a nano film, interconnect electrodes, a substrate 6, a sealing ring, a packaging shell 8, a ceramic substrate 9, and a lead post. A substrate 6 is provided on the upper surface of the ceramic substrate 9 through a sealing ring, and a nano-film is provided on the lower surface of the substrate 6, and an oxygen-free vacuum environment is provided for the nano-film through an oxygen-free packaging process, and the nano-film includes boron nitride/graphene / Boron nitride nano film. The metal electrodes are connected to the interconnection electrodes through wiring, and the interconnection electrodes pass through the ceramic substrate through the lead post to connect the detection unit with the external detection circuit, which is used to transmit the electrical response of the boron nitride/graphene/boron nitride nano-film to the temperature signal . The interconnection electrodes are formed by interconnection bumps and interconnection pads, and the packaging shell 8 is connected to the ceramic substrate 9 and bonded firmly.
所述衬底6为正方体，衬底6上表面布置的氮化硼/石墨烯/氮化硼纳米薄膜由上下两层氮化硼以及中间石墨烯构成，衬底6上表面被刻蚀出许多小孔形成多孔结构。The substrate 6 is a cube, and the boron nitride/graphene/boron nitride nano-film arranged on the upper surface of the substrate 6 is composed of upper and lower layers of boron nitride and middle graphene, and the upper surface of the substrate 6 is etched many Small pores form a porous structure.
所述陶瓷基板9通过密封环与衬底6相连接，通过无氧封装工艺，为纳米膜提供无氧真空环境，腔内可填充惰性、热膨胀系数较小的气体调整真空度满足不同的测试环境。The ceramic substrate 9 is connected to the substrate 6 through a sealing ring, and an oxygen-free vacuum environment is provided for the nano-membrane through an oxygen-free packaging process. The cavity can be filled with an inert gas with a small thermal expansion coefficient to adjust the vacuum degree to meet different test environments. .
所述衬底6材料选择α-Al2O3材料，基板采用Al2O3材料，所述密封环、金属电极以及外部互连电极选择Pt材料。The substrate 6 is made of α-Al2 O3 material, the substrate is made of Al2 O3 material, and the sealing ring, metal electrodes and external interconnection electrodes are made of Pt material.
所述金属电极布置在纳米膜两侧，用于导出氮化硼/石墨烯/氮化硼纳米薄膜的电学响应，引线柱连接外部互连电极后再连接外部检测电路，分别用于传递和检测氮化硼/石墨烯/氮化硼纳米薄膜对温度信号的电学响应，互连电极由互连凸点键合互连焊盘构成。阻挡层作为浸润层和保护层，连接金属电极、密封环与衬底，阻止高温下金属原子和衬底原子的相互扩散。封装外壳用以隔绝外界环境，支撑、保护内部芯片结构。The metal electrodes are arranged on both sides of the nanofilm to derive the electrical response of the boron nitride/graphene/boron nitride nanofilm, and the lead posts are connected to the external interconnection electrodes and then connected to the external detection circuit for transmission and detection respectively. The electrical response of boron nitride/graphene/boron nitride nanofilms to temperature signals, and the interconnection electrodes are composed of interconnection bumps and interconnection pads. The barrier layer acts as a wetting layer and a protective layer, connecting metal electrodes, sealing rings and substrates, and preventing mutual diffusion of metal atoms and substrate atoms at high temperatures. The packaging shell is used to isolate the external environment, support and protect the internal chip structure.
在本实施例中，所述互连凸点界定为第一互连凸点2、第二互连凸点3，所述密封环界定为第一密封环4、第二密封环5，所述引线柱界定为第一引线柱10、第二引线柱11、所述阻挡层界定为第一阻挡层12、第二阻挡层13、第三阻挡层14、第四阻挡层15，所述金属电极界定为第一金属电极21、第二金属电极22，所述外部互连电极界定为第一外部互连电极23、第二外部互连电极24，上述的零部件仅为位置不同，结构相同的、实现技术效果相同的零部件，仅以第一、第二等数字方式罗列区分；In this embodiment, the interconnection bumps are defined as the first interconnection bumps 2 and the second interconnection bumps 3, the sealing ring is defined as the first sealing ring 4 and the second sealing ring 5, the The lead column is defined as the first lead column 10, the second lead column 11, the barrier layer is defined as the first barrier layer 12, the second barrier layer 13, the third barrier layer 14, the fourth barrier layer 15, the metal electrode It is defined as the first metal electrode 21 and the second metal electrode 22, and the external interconnection electrode is defined as the first external interconnection electrode 23 and the second external interconnection electrode 24. The above-mentioned components are only different in position and have the same structure , Parts and components that achieve the same technical effect are only listed and distinguished by numbers such as first and second;
具体为，所述互连电极由第一互连凸点2、第二互连凸点3分别键合第一互连焊盘7、第二互连焊盘20构成，所述衬底6上侧面刻蚀有许多小孔以形成多孔结构，所述衬底6下侧面布置有所述氮化硼/石墨烯/氮化硼纳米薄膜1，并所述衬底6与所述氮化硼/石墨烯/氮化硼纳米薄膜1相对的面积小于整个所述衬底6的下侧面面积；Specifically, the interconnection electrodes are composed of first interconnection bumps 2 and second interconnection bumps 3 respectively bonded to first interconnection pads 7 and second interconnection pads 20 , and on the substrate 6 The side is etched with many small holes to form a porous structure, the boron nitride/graphene/boron nitride nano-film 1 is arranged on the lower side of the substrate 6, and the substrate 6 and the boron nitride/boron nitride nanofilm 1 are arranged. The relative area of the graphene/boron nitride nanofilm 1 is smaller than the area of the underside of the entire substrate 6;
在所述衬底6的下侧面外周侧分别通过第一密封环4、第二密封环5与所述陶瓷基板9连接，所述陶瓷基板9、衬底6及第一密封环4、第二密封环5构成一个无氧真空腔19，为纳米膜提供了无氧防护,隔绝了其与外界的直接接触，腔内可填充惰性、热膨胀系数较小的气体调整真空度满足不同的测试环境。The outer peripheral side of the lower side of the substrate 6 is respectively connected to the ceramic substrate 9 through the first sealing ring 4 and the second sealing ring 5. The ceramic substrate 9, the substrate 6 and the first sealing ring 4 and the second The sealing ring 5 forms an oxygen-free vacuum chamber 19, which provides anaerobic protection for the nano-membrane and isolates it from direct contact with the outside world. The chamber can be filled with inert gas with a small thermal expansion coefficient to adjust the vacuum degree to meet different test environments.
如图4所示，为本发明第一实施例的芯片仰视图，所述第一金属电极21、第二金属电极22分别连接所述氮化硼/石墨烯/氮化硼三层纳米薄膜1的两端，用于导出氮化硼/石墨烯/氮化硼三层纳米薄膜1中的电学响应；As shown in FIG. 4 , it is a bottom view of the chip according to the first embodiment of the present invention, and the first metal electrode 21 and the second metal electrode 22 are respectively connected to the boron nitride/graphene/boron nitride three-layer nano-film 1 The two ends of are used to derive the electrical response in the boron nitride/graphene/boron nitride three-layer nano-film 1;
具体为：所述第一金属电极21、第二金属电极22通过布线分别连接第一互连凸点2、第二互连凸点3，所述第一互连凸点2、第二互连凸点3分别键合第一互连焊盘7、第二互连焊盘20，所述第一互连焊盘7及第二互连焊盘20分别通过第一引线柱10、第二引线柱11与所述引线柱相连的第一外部互连电极23、第二外部互连电极24相连，第一外部互连电极23、第二外部互连电极24连接外部检测组件，所述外部检测组件为现有技术中构成完整传感器结构的组件即可。Specifically: the first metal electrode 21 and the second metal electrode 22 are respectively connected to the first interconnection bump 2 and the second interconnection bump 3 through wiring, and the first interconnection bump 2 and the second interconnection bump The bumps 3 are respectively bonded to the first interconnection pad 7 and the second interconnection pad 20, and the first interconnection pad 7 and the second interconnection pad 20 pass through the first lead column 10 and the second lead wire respectively. The column 11 is connected to the first external interconnection electrode 23 and the second external interconnection electrode 24 connected to the lead column, the first external interconnection electrode 23 and the second external interconnection electrode 24 are connected to the external detection component, and the external detection The components may be components that constitute a complete sensor structure in the prior art.
如图5、6所示，在所述第一金属电极21、第二金属电极22、第一密封环4、第二密封环5与衬底6之间均相应的设置有第一阻挡层12、第二阻挡层13、第三阻挡层14、第四阻挡层15，阻止高温下金属原子向衬底6扩散。As shown in Figures 5 and 6, a first barrier layer 12 is correspondingly provided between the first metal electrode 21, the second metal electrode 22, the first sealing ring 4, the second sealing ring 5 and the substrate 6 , the second barrier layer 13, the third barrier layer 14, and the fourth barrier layer 15 prevent metal atoms from diffusing to the substrate 6 at high temperature.
如图7所示，所述氮化硼/石墨烯/氮化硼纳米薄膜1由上层氮化硼层16、下层氮化硼层17及夹在其中的石墨烯层18组成，在其它实施例中，所述上层、下层氮化硼的层数大于等于1，石墨烯为单层结构，所述氮化硼/石墨烯/氮化硼纳米薄膜1的下层氮化硼17及石墨烯层18贴覆在所述第一金属电极21、第二金属电极22的上表面，上层石墨烯两端与第一阻挡层12、第二阻挡层13、第三阻挡层14、第四阻挡层15接触，第一阻挡层12、第二阻挡层13、第三阻挡层14、第四阻挡层15作为浸润层和保护层，连接第一金属电极21、第二金属电极22、第一密封环4、第二密封环5与衬底6，阻止高温下金属原子和衬底原子的相互扩散。As shown in Figure 7, the boron nitride/graphene/boron nitride nano film 1 is composed of an upper boron nitride layer 16, a lower boron nitride layer 17 and a graphene layer 18 sandwiched therein, in other embodiments Among them, the number of layers of the upper and lower layers of boron nitride is greater than or equal to 1, and graphene is a single-layer structure, and the lower layer of boron nitride 17 and graphene layer 18 of the boron nitride/graphene/boron nitride nanofilm 1 Pasted on the upper surface of the first metal electrode 21 and the second metal electrode 22, the two ends of the upper graphene are in contact with the first barrier layer 12, the second barrier layer 13, the third barrier layer 14, and the fourth barrier layer 15 , the first barrier layer 12, the second barrier layer 13, the third barrier layer 14, and the fourth barrier layer 15 serve as a wetting layer and a protective layer, connecting the first metal electrode 21, the second metal electrode 22, the first sealing ring 4, The second sealing ring 5 and the substrate 6 prevent mutual diffusion of metal atoms and substrate atoms at high temperature.
本发明原理是：Principle of the invention is:
当外部温度信号作用于衬底上表面时，温度信号会通过开孔结构加快传递到衬底下表面的温敏结构，其中的石墨烯纳米薄膜受温度的影响，其材料内部的电声子耦合强度、声子散射强度发生改变，从而导致石墨烯的电导率发生改变。通过检测石墨烯面内的电流变化即可测得外部施加的温度值。同时在这一过程中，无氧真空腔与双层氮化硼为石墨烯层提供的隔氧保护，确保了石墨烯可以在高温环境下工作，从而实现恶劣复杂高温环境下温度的高精度测量。When the external temperature signal acts on the upper surface of the substrate, the temperature signal will accelerate the transmission to the temperature-sensitive structure on the lower surface of the substrate through the open-hole structure. The graphene nano-film is affected by the temperature, and the electric-phonon coupling strength inside the material , The phonon scattering intensity changes, resulting in a change in the conductivity of graphene. The externally applied temperature value can be measured by detecting the current change in the graphene surface. At the same time, in this process, the oxygen barrier protection provided by the oxygen-free vacuum chamber and double-layer boron nitride for the graphene layer ensures that the graphene can work in a high-temperature environment, thereby realizing high-precision measurement of temperature in harsh and complex high-temperature environments .
在本说明书的描述中，参考术语“一个实施例”、“一些实施例”、“示意性实施例”、“示例”、“具体示例”、或“一些示例”等的描述意指结合该实施例或示例描述的具体特征、结构、材料或者特点包含于本发明的至少一个实施例或示例中。在本说明书中，对上述术语的示意性表述不一定指的是相同的实施例或示例。而且，描述的具体特征、结构、材料或者特点可以在任何的一个或多个实施例或示例中以合适的方式结合。In the description of this specification, references to the terms "one embodiment," "some embodiments," "exemplary embodiments," "example," "specific examples," or "some examples" are intended to mean that the implementation A specific feature, structure, material, or characteristic described by an embodiment or example is included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
尽管已经示出和描述了本发明的实施例，本领域的普通技术人员可以理解，在不脱离本发明的原理和宗旨的情况下可以对这些实施例进行多种变化、修改、替换和变型，本发明的范围由权利要求及其等同物限定。Although the embodiments of the present invention have been shown and described, those skilled in the art can understand that various changes, modifications, substitutions and variations can be made to these embodiments without departing from the principle and spirit of the present invention. The scope of the invention is defined by the claims and their equivalents.
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910386553.8ACN110207839A (en) | 2019-05-09 | 2019-05-09 | A kind of graphene high temperature sensor |
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910386553.8ACN110207839A (en) | 2019-05-09 | 2019-05-09 | A kind of graphene high temperature sensor |
| Publication Number | Publication Date |
|---|---|
| CN110207839Atrue CN110207839A (en) | 2019-09-06 |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910386553.8APendingCN110207839A (en) | 2019-05-09 | 2019-05-09 | A kind of graphene high temperature sensor |
| Country | Link |
|---|---|
| CN (1) | CN110207839A (en) |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111141404A (en)* | 2020-01-15 | 2020-05-12 | 中北大学 | A thin film structure graphene high temperature temperature sensor |
| CN111141431A (en)* | 2020-01-15 | 2020-05-12 | 中北大学 | Graphene high-pressure sensor based on nano-pores |
| CN111337083A (en)* | 2020-04-08 | 2020-06-26 | 中北大学 | High-temperature graphene pressure/temperature integrated sensor |
| CN114121693A (en)* | 2021-11-17 | 2022-03-01 | 中北大学南通智能光机电研究院 | Ultrahigh temperature resistant airtight packaging method |
| CN114166897A (en)* | 2021-11-17 | 2022-03-11 | 中北大学南通智能光机电研究院 | Gas sensor based on graphene microstructure |
| CN115028474A (en)* | 2022-05-11 | 2022-09-09 | 中北大学 | Graphene sensor composite thermal protection structure and preparation thereof |
| CN115655502A (en)* | 2022-12-29 | 2023-01-31 | 中北大学 | Temperature sensor based on piezoresistive characteristic of suspended graphene film |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107436205A (en)* | 2017-08-14 | 2017-12-05 | 中北大学 | Temperature-compensating graphene pressure sensor in a kind of piece |
| CN107941385A (en)* | 2017-08-14 | 2018-04-20 | 中北大学 | A kind of pressure sensor based on graphene piezoresistance knot |
| CN109520632A (en)* | 2018-12-10 | 2019-03-26 | 上海交通大学 | Profound hypothermia temperature sensor-packaging structure and preparation method based on micro fabrication |
| CN210774407U (en)* | 2019-05-09 | 2020-06-16 | 中北大学 | Graphene high-temperature sensor |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107436205A (en)* | 2017-08-14 | 2017-12-05 | 中北大学 | Temperature-compensating graphene pressure sensor in a kind of piece |
| CN107941385A (en)* | 2017-08-14 | 2018-04-20 | 中北大学 | A kind of pressure sensor based on graphene piezoresistance knot |
| CN109520632A (en)* | 2018-12-10 | 2019-03-26 | 上海交通大学 | Profound hypothermia temperature sensor-packaging structure and preparation method based on micro fabrication |
| CN210774407U (en)* | 2019-05-09 | 2020-06-16 | 中北大学 | Graphene high-temperature sensor |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111141404A (en)* | 2020-01-15 | 2020-05-12 | 中北大学 | A thin film structure graphene high temperature temperature sensor |
| CN111141431A (en)* | 2020-01-15 | 2020-05-12 | 中北大学 | Graphene high-pressure sensor based on nano-pores |
| CN111141404B (en)* | 2020-01-15 | 2025-06-17 | 中北大学 | A thin film structure graphene high temperature temperature sensor |
| CN111337083A (en)* | 2020-04-08 | 2020-06-26 | 中北大学 | High-temperature graphene pressure/temperature integrated sensor |
| CN114121693A (en)* | 2021-11-17 | 2022-03-01 | 中北大学南通智能光机电研究院 | Ultrahigh temperature resistant airtight packaging method |
| CN114166897A (en)* | 2021-11-17 | 2022-03-11 | 中北大学南通智能光机电研究院 | Gas sensor based on graphene microstructure |
| CN114121693B (en)* | 2021-11-17 | 2025-06-10 | 中北大学 | Ultra-temperature-resistant gas seal packing method |
| CN115028474A (en)* | 2022-05-11 | 2022-09-09 | 中北大学 | Graphene sensor composite thermal protection structure and preparation thereof |
| CN115028474B (en)* | 2022-05-11 | 2023-09-08 | 中北大学 | Graphene sensor composite thermal protection structure and preparation thereof |
| CN115655502A (en)* | 2022-12-29 | 2023-01-31 | 中北大学 | Temperature sensor based on piezoresistive characteristic of suspended graphene film |
| Publication | Publication Date | Title |
|---|---|---|
| CN110207839A (en) | A kind of graphene high temperature sensor | |
| CN107359235B (en) | Graphene pressure sensor | |
| CN107941385B (en) | Pressure sensor based on graphene piezoresistance junction | |
| CN107436205B (en) | On-chip temperature compensation graphene pressure sensor | |
| CN111141404B (en) | A thin film structure graphene high temperature temperature sensor | |
| CN108168734B (en) | A flexible electronic skin based on cilia temperature sensing and its preparation method | |
| CN111337083A (en) | High-temperature graphene pressure/temperature integrated sensor | |
| CN207095742U (en) | A kind of pressure sensor based on graphene piezoresistance knot | |
| TW201105972A (en) | Radio frequency identification based thermal bubble type accelerometer | |
| CN111982323A (en) | Thermopile type high-temperature heat flow sensor and preparation method thereof | |
| CN210774407U (en) | Graphene high-temperature sensor | |
| CN117607712B (en) | Pressure-temperature sensor for monitoring safety state of lithium battery and preparation method | |
| CN106052909A (en) | Novel no-cavity graphene high temperature pressure sensor | |
| CN108011030A (en) | A kind of SiC thermocouple types high-temperature heat flux sensor and preparation method thereof | |
| CN108007580A (en) | High-temperature heat flux sensor based on SiC thermoelectric materials and preparation method thereof | |
| CN211877098U (en) | A high temperature graphene pressure/temperature integrated sensor | |
| CN107436365B (en) | Graphene wind speed and direction sensor | |
| CN211425693U (en) | Film structure graphite alkene high temperature sensor | |
| CN207197705U (en) | Temperature-compensating graphene pressure sensor in a kind of piece | |
| CN106908163B (en) | A kind of highly sensitive film thermocouple sensor chip and production method | |
| CN113325199B (en) | Thermopile type high-sensitivity flexible acceleration sensor and preparation method thereof | |
| CN207199672U (en) | A kind of graphene pressure sensor | |
| CN207851102U (en) | A graphene wind speed and direction sensor | |
| CN214667343U (en) | Graphene high-temperature transient heat flux density sensor with bridge structure | |
| CN111024213B (en) | Flexible capacitive vibration sensor and manufacturing method thereof |
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication | Application publication date:20190906 |