技术领域technical field
本发明涉及电子电路技术领域，尤其涉及一种开关电路及开关芯片。The invention relates to the technical field of electronic circuits, in particular to a switch circuit and a switch chip.
背景技术Background technique
由场效应晶体管组成的开关具有偏置网络简单、控制电流小、驱动电路简化、开关速度快等优势。另外，场效应晶体管开关的实现使一个仅仅几平方毫米的芯片具有更多的功能，并具有很高的性能，应用方便。The switch composed of field effect transistors has the advantages of simple bias network, small control current, simplified driving circuit, and fast switching speed. In addition, the realization of the field effect transistor switch enables a chip with only a few square millimeters to have more functions, high performance, and convenient application.
目前的场效应晶体管组成的开关的插损和隔离等性能不好，影响场效应晶体管开关的使用。The insertion loss and isolation performance of the switch composed of the current field effect transistor is not good, which affects the use of the field effect transistor switch.
发明内容Contents of the invention
本发明实施例提供了一种开关电路及开关芯片，旨在解决目前场效应晶体管组成的开关的插损和隔离性能不好的问题。Embodiments of the present invention provide a switch circuit and a switch chip, aiming at solving the problems of poor insertion loss and isolation performance of switches composed of field effect transistors.
本发明实施例的第一方面提供了一种开关电路，其特征在于，包括：至少一路开关通道模块；The first aspect of the embodiments of the present invention provides a switch circuit, which is characterized in that it includes: at least one switch channel module;
所述开关通道模块包括至少三个开关管单元和一条传输线；The switch channel module includes at least three switch tube units and a transmission line;
所述传输线的第一端为所述开关通道模块的输入端，所述传输线的第二端为所述开关通道模块的输出端；所述传输线上设有接口；The first end of the transmission line is the input end of the switch channel module, and the second end of the transmission line is the output end of the switch channel module; the transmission line is provided with an interface;
每个开关管单元的第一输入端与传输线上的一个接口相连，且一个接口上最多连接一个开关管单元；每个开关管单元的第二输入端外接电压源。The first input end of each switching tube unit is connected to an interface on the transmission line, and one interface is connected with at most one switching tube unit; the second input end of each switching tube unit is connected to an external voltage source.
在本申请的实施例中，所述开关电路包括至少两路开关通道模块时，所述开关通道模块的输入端共接。In an embodiment of the present application, when the switch circuit includes at least two switch channel modules, the input ends of the switch channel modules are commonly connected.
在本申请的实施例中，所述开关管单元包括晶体管和电阻R1；In the embodiment of the present application, the switch tube unit includes a transistor and a resistor R1;
所述晶体管的漏极为所述开关管单元的第一输入端，所述晶体管的源极接地，所述晶体管的栅极与所述电阻R1的第一端相连，所述电阻R1的第二端为所述开关管单元的第二输入端。The drain of the transistor is the first input end of the switching tube unit, the source of the transistor is grounded, the gate of the transistor is connected to the first end of the resistor R1, and the second end of the resistor R1 It is the second input end of the switching tube unit.
在本申请的实施例中，所述开关管单元包括晶体管和电阻R1；In the embodiment of the present application, the switch tube unit includes a transistor and a resistor R1;
在连接了开关管单元的接口中，与所述开关通道模块的输出端距离最近的接口所连接的开关管单元还包括电阻R2；Among the interfaces connected to the switch tube unit, the switch tube unit connected to the interface closest to the output end of the switch channel module further includes a resistor R2;
所述晶体管的漏极为所述开关管单元的第一输入端，所述晶体管的源极与所述电阻R2的第一端相连，所述电阻R2的第二端接地，所述晶体管的栅极与所述电阻R1的第一端相连，所述电阻R1的第二端为所述开关管单元的第二输入端。The drain of the transistor is the first input end of the switching tube unit, the source of the transistor is connected to the first end of the resistor R2, the second end of the resistor R2 is grounded, and the gate of the transistor It is connected to the first end of the resistor R1, and the second end of the resistor R1 is the second input end of the switching tube unit.
在本申请的实施例中，所述晶体管为场效应晶体管。In an embodiment of the present application, the transistor is a field effect transistor.
在本申请的实施例中，所述传输线为微带线。In an embodiment of the present application, the transmission line is a microstrip line.
在本申请的实施例中，所述开关通道模块为8个，8个开关通道模块的输入端共接。In the embodiment of the present application, there are eight switch channel modules, and the input terminals of the eight switch channel modules are connected in common.
在本申请的实施例中，每一路开关通道模块中均包括4个开关管单元，每一路上的4个开关管单元的第二输入端共接一个电压源，每个开关通道模块中的开关管单元连接独立的电压源。In the embodiment of the present application, each switch channel module includes 4 switch tube units, and the second input terminals of the 4 switch tube units on each road are connected to a voltage source in common, and the switch in each switch channel module The tube unit is connected to an independent voltage source.
本发明实施例的第一方面提供了一种开关芯片，其特征在于，包括以上所述的开关电路。The first aspect of the embodiments of the present invention provides a switch chip, which is characterized by comprising the above-mentioned switch circuit.
本发明中设有少一路开关通道模块，每个开关通道模块采用至少三个开关管单元并联的结构，结构紧凑布局合理，提高了由场效应晶体管组成的开关的隔离性能，降低了由场效应晶体管组成的开关的插损性能，改善了由场效应晶体管组成的开关的驻波性能。In the present invention, there is one less switch channel module, each switch channel module adopts the structure of at least three switch tube units connected in parallel, the structure is compact and the layout is reasonable, the isolation performance of the switch composed of field effect transistors is improved, and the isolation performance caused by field effect transistors is reduced. The insertion loss performance of the switch composed of transistors improves the standing wave performance of the switch composed of field effect transistors.
附图说明Description of drawings
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动性的前提下，还可以根据这些附图获得其他的附图。In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following will briefly introduce the accompanying drawings that need to be used in the embodiments. Obviously, the accompanying drawings in the following description are only some embodiments of the present invention. For Those of ordinary skill in the art can also obtain other drawings based on these drawings without any creative effort.
图1为本发明的一个实施例提供的开关电路的结构示意图；Fig. 1 is a schematic structural diagram of a switch circuit provided by an embodiment of the present invention;
图2为本发明的一个实施例提供的单刀八掷开关电路的结构示意图。FIG. 2 is a schematic structural diagram of a single-pole eight-throw switch circuit provided by an embodiment of the present invention.
具体实施方式Detailed ways
为了使本技术领域的人员更好地理解本方案，下面将结合本方案实施例中的附图，对本方案实施例中的技术方案进行清楚地描述，显然，所描述的实施例是本方案一部分的实施例，而不是全部的实施例。基于本方案中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都应当属于本方案保护的范围。In order to enable those skilled in the art to better understand this solution, the technical solution in this solution embodiment will be clearly described below in conjunction with the accompanying drawings in this solution embodiment. Obviously, the described embodiment is a part of this solution Examples, but not all examples. Based on the embodiments in this solution, all other embodiments obtained by persons of ordinary skill in the art without creative efforts shall fall within the protection scope of this solution.
本方案的说明书和权利要求书及上述附图中的术语“包括”以及其他任何变形，是指“包括但不限于”，意图在于覆盖不排他的包含。此外，术语“第一”和“第二”等是用于区别不同对象，而非用于描述特定顺序。The term "comprising" and any other variants in the description and claims of this solution and the above drawings mean "including but not limited to", and are intended to cover non-exclusive inclusion. In addition, the terms "first" and "second", etc. are used to distinguish different objects, not to describe a specific order.
以下结合具体附图对本发明的实现进行详细地描述：The realization of the present invention is described in detail below in conjunction with specific accompanying drawing:
图1示出了本发明一实施例所提供的一种开关电路，为了便于说明，仅示出了与本发明实施例相关的部分，详述如下：Figure 1 shows a switch circuit provided by an embodiment of the present invention. For the convenience of description, only the parts related to the embodiment of the present invention are shown, and the details are as follows:
如图1所示，本发明实施例所提供的开关电路1，包括至少一路开关通道模块110。As shown in FIG. 1 , the switch circuit 1 provided by the embodiment of the present invention includes at least one switch channel module 110 .
所述开关通道模块110包括至少三个开关管单元111和一条传输线。The switch channel module 110 includes at least three switch transistor units 111 and a transmission line.
所述传输线的第一端为所述开关通道模块110的输入端，所述传输线的第二端为所述开关通道模块110的输出端；所述传输线上设有接口。The first end of the transmission line is the input end of the switch channel module 110, and the second end of the transmission line is the output end of the switch channel module 110; the transmission line is provided with an interface.
每个开关管单元111的第一输入端与传输线上的一个接口相连，且一个接口上最多连接一个开关管单元111；每个开关管单元111的第二输入端外接电压源。The first input end of each switching tube unit 111 is connected to an interface on the transmission line, and at most one switching tube unit 111 is connected to one interface; the second input end of each switching tube unit 111 is connected to an external voltage source.
在本实施例中，开关管单元111与传输线的连接位置可以根据需要调整。In this embodiment, the connection position of the switch tube unit 111 and the transmission line can be adjusted as required.
本发明实施例中，设有至少一路开关通道模块110，每个开关通道模块110采用至少三个开关管单元111并联的结构，结构紧凑布局合理，提高了由场效应晶体管组成的开关的隔离性能，降低了由场效应晶体管组成的开关的插损性能，改善了由场效应晶体管组成的开关的驻波性能。In the embodiment of the present invention, there is at least one switch channel module 110, and each switch channel module 110 adopts a structure in which at least three switch tube units 111 are connected in parallel, the structure is compact and the layout is reasonable, and the isolation performance of the switch composed of field effect transistors is improved. , reduces the insertion loss performance of the switch composed of field effect transistors, and improves the standing wave performance of the switch composed of field effect transistors.
在本发明的实施例中，开关电路包括至少两路开关通道模块110时，所述开关通道模块110的输入端共接。In an embodiment of the present invention, when the switch circuit includes at least two switch channel modules 110, the input terminals of the switch channel modules 110 are connected in common.
在本实施例中，开关通道模块110为两路时，形成单刀双掷开关；开关通道模块110为三路时，形成单刀三掷开关；开关通道模块110为四路时，形成单刀四掷开关；……开关通道模块110为八路时，形成单刀八掷开关。开关通道模块110无论是两路、三路还是八路，每一路的开关通道模块110结构都是相同的。In this embodiment, when the switch channel module 110 is two-way, a single-pole double-throw switch is formed; when the switch channel module 110 is three-way, a single-pole three-throw switch is formed; when the switch channel module 110 is four-way, a single-pole four-throw switch is formed ;... When the switch channel module 110 has eight channels, a single-pole eight-throw switch is formed. Whether the switch channel module 110 has two channels, three channels or eight channels, the structure of the switch channel module 110 of each channel is the same.
在本发明的实施例中，开关管单元111包括晶体管和电阻R1；In an embodiment of the present invention, the switching tube unit 111 includes a transistor and a resistor R1;
所述晶体管的漏极为所述开关管单元111的第一输入端，所述晶体管的源极接地，所述晶体管的栅极与所述电阻R1的第一端相连，所述电阻R1的第二端为所述开关管单元111的第二输入端。The drain of the transistor is the first input end of the switching transistor unit 111, the source of the transistor is grounded, the gate of the transistor is connected to the first end of the resistor R1, and the second end of the resistor R1 The terminal is the second input terminal of the switch tube unit 111 .
在本实施例中，电阻R1为栅电阻。In this embodiment, the resistor R1 is a gate resistor.
在本发明的实施例中，开关管单元111包括晶体管和电阻R1；In an embodiment of the present invention, the switching tube unit 111 includes a transistor and a resistor R1;
在连接了开关管单元111的接口中，与所述开关通道模块110的输出端距离最近的接口所连接的开关管单元111还包括电阻R2；Among the interfaces connected with the switch tube unit 111, the switch tube unit 111 connected to the interface closest to the output end of the switch channel module 110 also includes a resistor R2;
所述晶体管的漏极为所述开关管单元111的第一输入端，所述晶体管的源极与所述电阻R2的第一端相连，所述电阻R2的第二端接地，所述晶体管的栅极与所述电阻R1的第一端相连，所述电阻R1的第二端为所述开关管单元111的第二输入端。The drain of the transistor is the first input end of the switching transistor unit 111, the source of the transistor is connected to the first end of the resistor R2, the second end of the resistor R2 is grounded, and the gate of the transistor The pole is connected to the first end of the resistor R1, and the second end of the resistor R1 is the second input end of the switching tube unit 111.
在本实施例中，电阻R2为负载。In this embodiment, the resistor R2 is the load.
作为举例，如果开关通道模块110上有四个开关管单元111，同样有四个接口，则每个接口连接一个开关管单元111，第四个开关管单元111上还包括电阻R2。As an example, if there are four switch tube units 111 on the switch channel module 110 and also four interfaces, each interface is connected to one switch tube unit 111 , and the fourth switch tube unit 111 also includes a resistor R2.
在具体应用中，开关输出匹配状态分为反射式和吸收式两种。反射式开关在关态时输出端处于开路或者短路状态，将信号全部反射回去实现高隔离度；而吸收式开关关态时将输出切换到电阻上，实现好的输出驻波，这种开关有利于整个微波系统的稳定。In specific applications, the switching output matching state is divided into two types: reflection type and absorption type. When the reflective switch is in the off state, the output terminal is in an open circuit or short circuit state, reflecting all the signals back to achieve high isolation; while the absorptive switch is in the off state, the output is switched to the resistor to achieve a good output standing wave. This kind of switch has It is beneficial to the stability of the whole microwave system.
若与所述开关通道模块110的输出端距离最近的接口所连接的开关管单元111上没有连接电阻R2，则开关处于反射式状态。If the switch tube unit 111 connected to the interface closest to the output end of the switch channel module 110 is not connected to the resistor R2, the switch is in a reflective state.
若与所述开关通道模块110的输出端距离最近的接口所连接的开关管单元111上有连接电阻R2，则开关处于吸收式状态。If the switch tube unit 111 connected to the interface closest to the output end of the switch channel module 110 has a connection resistance R2, the switch is in an absorbing state.
在本发明的实施例中，晶体管为场效应晶体管。In an embodiment of the invention, the transistor is a field effect transistor.
在本发明的实施例中，传输线为微带线。In an embodiment of the present invention, the transmission line is a microstrip line.
在本发明的实施例中，开关通道模块110为8个，8个开关通道模块110的输入端共接。In the embodiment of the present invention, there are eight switch channel modules 110, and the input terminals of the eight switch channel modules 110 are connected in common.
在本发明的实施例中，每一路开关通道模块110中均包括4个开关管单元111，每一路上的4个开关管单元111的第二输入端共接一个电压源，每个开关通道模块110中的开关管单元111连接独立的电压源。In the embodiment of the present invention, each switch channel module 110 includes four switch tube units 111, and the second input terminals of the four switch tube units 111 on each channel are connected to a voltage source in common, and each switch channel module The switch tube unit 111 in 110 is connected to an independent voltage source.
在本发明的实施例中，每一路开关通道模块110中的传输线上连接了开关管单元111的接口的位置尽可能保持一致，可以通过微调接口的位置，以达到每个开关通道模块的插损和隔离度等性能指标一致。In the embodiment of the present invention, the position of the interface connected to the switch tube unit 111 on the transmission line in each switch channel module 110 is kept as consistent as possible, and the insertion loss of each switch channel module can be achieved by fine-tuning the position of the interface. Consistent with performance indicators such as isolation.
在具体应用中，开关通道模块110为8个，每一路开关通道模块110中均包括4个开关管单元111。In a specific application, there are eight switch channel modules 110 , and each switch channel module 110 includes four switch tube units 111 .
通常低频常用频段，开关为了获得较理想的插损和隔离度，一般采用串并混合结构。但在毫米波至亚毫米波频段串联晶体管在关闭状态会增加开关的差损。并联晶体管可以提高端口之间的隔离度，所以综合考虑本发明高频高隔离低插损的要求，综合考虑并经仿真确定运用单路并联四级场效应晶体管的拓扑形式实现电路。而通常用单个场效应晶体管的on，off两种状态的隔离性能并不理想，因此本设计采用四级并联的结构，从而获得了较好的隔离度和输入输出驻波性能。还降低了各个开关通道模块110的插入损耗。较好的隔离度指的是每一路开关通道模块110之间的隔离度增强。Generally, low-frequency frequency bands are commonly used. In order to obtain ideal insertion loss and isolation, the switch generally adopts a series-parallel hybrid structure. However, in the mmWave to submillimeterWave bands, the transistors in series in the off state will increase the switching loss. Parallel transistors can improve the isolation between ports, so the requirements of high frequency, high isolation and low insertion loss of the present invention are comprehensively considered, and the circuit is realized by using the topological form of single-channel parallel four-stage field-effect transistors after comprehensive consideration and simulation. Usually, the isolation performance of the on and off states of a single field effect transistor is not ideal, so this design adopts a four-stage parallel structure, thereby obtaining better isolation and input and output standing wave performance. The insertion loss of each switch channel module 110 is also reduced. Better isolation refers to enhanced isolation between each switch channel module 110 .
如图2所示，为了便于理解，以单刀八掷开关为例进行说明：As shown in Figure 2, for ease of understanding, a single-pole eight-throw switch is used as an example for illustration:
单刀八掷开关，开关通道模块110为8个，且8路开关通道模块110结构都相同。每一路开关通道模块110中均包括4个开关管单元111，前三个开关管单元111包括晶体管和电阻R1；所述晶体管的漏极为所述开关管单元111的第一输入端，所述晶体管的源极接地，所述晶体管的栅极与所述电阻R1的第一端相连，所述电阻R1的第二端为所述开关管单元111的第二输入端。For a single-pole, eight-throw switch, there are eight switch channel modules 110, and the eight switch channel modules 110 all have the same structure. Each switch channel module 110 includes four switch tube units 111, the first three switch tube units 111 include a transistor and a resistor R1; the drain of the transistor is the first input terminal of the switch tube unit 111, and the transistor The source of the transistor is grounded, the gate of the transistor is connected to the first end of the resistor R1 , and the second end of the resistor R1 is the second input end of the switching transistor unit 111 .
第四个开关管单元111还包括电阻R2；所述晶体管的漏极为所述开关管单元111的第一输入端，所述晶体管的源极与所述电阻R2的第一端相连，所述电阻R2的第二端接地，所述晶体管的栅极与所述电阻R1的第一端相连，所述电阻R1的第二端为所述开关管单元111的第二输入端。The fourth switch tube unit 111 also includes a resistor R2; the drain of the transistor is the first input terminal of the switch tube unit 111, the source of the transistor is connected to the first end of the resistor R2, and the resistor The second end of R2 is grounded, the gate of the transistor is connected to the first end of the resistor R1 , and the second end of the resistor R1 is the second input end of the switching transistor unit 111 .
电源V1为低电平，电源V2-V8为高电平时，FET11～FET14为反向截止状态，FET21～FET24……FET81～FET84处于正向导通状态时；则通道2-8的效应晶体管均短路，经过1/4λ的阻抗变换，通道2-8的公共节点处的阻抗为无穷大，从而没有功率损耗；并且不影响通道1的功率传输，理想状态下通道1的衰减为0，隔离为无穷大。同理，其他支路的导通状态也同通道1一样。When the power supply V1 is at low level and the power supply V2-V8 is at high level, FET11~FET14 are in the reverse cut-off state, and FET21~FET24...FET81~FET84 are in the forward conduction state; the effect transistors of channels 2-8 are all short-circuited , after 1/4λ impedance transformation, the impedance at the common node of channels 2-8 is infinite, so there is no power loss; and it does not affect the power transmission of channel 1. Ideally, the attenuation of channel 1 is 0, and the isolation is infinite. Similarly, the conduction state of other branches is the same as that of channel 1.
本发明实施例所提供的一种开关芯片，包括以上所述的开关电路1。A switch chip provided by an embodiment of the present invention includes the switch circuit 1 described above.
以上所述，以上实施例仅用以说明本发明的技术方案，而非对其限制；尽管参照前述实施例对本发明进行了详细的说明，本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例技术方案的精神和范围。As mentioned above, the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that: it can still understand the foregoing The technical solutions recorded in each embodiment are modified, or some of the technical features are replaced equivalently; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the various embodiments of the present invention.
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910407332.4ACN110138371A (en) | 2019-05-15 | 2019-05-15 | A kind of switching circuit and switch chip |
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910407332.4ACN110138371A (en) | 2019-05-15 | 2019-05-15 | A kind of switching circuit and switch chip |
| Publication Number | Publication Date |
|---|---|
| CN110138371Atrue CN110138371A (en) | 2019-08-16 |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910407332.4APendingCN110138371A (en) | 2019-05-15 | 2019-05-15 | A kind of switching circuit and switch chip |
| Country | Link |
|---|---|
| CN (1) | CN110138371A (en) |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114826242A (en)* | 2022-03-21 | 2022-07-29 | 中国电子科技集团公司第十三研究所 | Microwave power switch circuit, device and control method |
| CN115021737A (en)* | 2022-05-06 | 2022-09-06 | 夏芯微电子(上海)有限公司 | Radio frequency switch circuit and electronic communication equipment |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5159297A (en)* | 1990-05-31 | 1992-10-27 | Fujitsu Limited | Switching circuit having constant impedance regardless switching operation thereof |
| US20030132814A1 (en)* | 2002-01-15 | 2003-07-17 | Nokia Corporation | Circuit topology for attenuator and switch circuits |
| US20100097119A1 (en)* | 2008-10-22 | 2010-04-22 | The Boeing Company | Gallium nitride switch methodology |
| CN107069152A (en)* | 2017-03-21 | 2017-08-18 | 南京米乐为微电子科技有限公司 | A kind of integrated single-pole double-throw switch (SPDT) of high-power high-isolation of millimeter wave ultra-wideband |
| CN108717943A (en)* | 2018-03-30 | 2018-10-30 | 中国科学院微电子研究所 | HEMT and single-pole double-throw switch circuit |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5159297A (en)* | 1990-05-31 | 1992-10-27 | Fujitsu Limited | Switching circuit having constant impedance regardless switching operation thereof |
| US20030132814A1 (en)* | 2002-01-15 | 2003-07-17 | Nokia Corporation | Circuit topology for attenuator and switch circuits |
| US20100097119A1 (en)* | 2008-10-22 | 2010-04-22 | The Boeing Company | Gallium nitride switch methodology |
| CN107069152A (en)* | 2017-03-21 | 2017-08-18 | 南京米乐为微电子科技有限公司 | A kind of integrated single-pole double-throw switch (SPDT) of high-power high-isolation of millimeter wave ultra-wideband |
| CN108717943A (en)* | 2018-03-30 | 2018-10-30 | 中国科学院微电子研究所 | HEMT and single-pole double-throw switch circuit |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114826242A (en)* | 2022-03-21 | 2022-07-29 | 中国电子科技集团公司第十三研究所 | Microwave power switch circuit, device and control method |
| CN115021737A (en)* | 2022-05-06 | 2022-09-06 | 夏芯微电子(上海)有限公司 | Radio frequency switch circuit and electronic communication equipment |
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| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | Application publication date:20190816 | |
| RJ01 | Rejection of invention patent application after publication |