技术领域technical field
本发明涉及一种半导体制造工艺方法，具体地，涉及一种各向异性刻蚀图形化聚酰亚胺层的方法。The invention relates to a semiconductor manufacturing process method, in particular to a method for anisotropically etching a patterned polyimide layer.
背景技术Background technique
聚酰亚胺（Polyimide，简称PI）材料是一种综合性能优异的有机高分子材料，主要表现为：1、具有较高的耐高温性，最高耐温可达350~450℃；2、热绝缘性好，热传导系数很小，达到2.5E-4 cal/cm sec℃,非常适合作为一些微型结构的绝热垫层；3、电绝缘，是一种不导电的材料；4、使用干法氧气等离子体就可以进行刻蚀、灰化去除等。基于以上优势，常作为一种非制冷红外辐射热计的牺牲层材料来使用。Polyimide (Polyimide, referred to as PI) material is an organic polymer material with excellent comprehensive properties. Well, the thermal conductivity is very small, reaching 2.5E-4 cal/cm sec ° C, very suitable as a thermal insulation cushion for some microstructures; 3, electrical insulation, is a non-conductive material; 4, using dry oxygen plasma Etching, ashing removal, etc. can be performed. Based on the above advantages, it is often used as a sacrificial layer material of an uncooled infrared bolometer.
PI一般涂覆于带底层红外探测器处理电路的SiN或SiO2表面，需要干法各向异性刻蚀来获得器件的支撑和顶层红外辐射及接触孔。为了控制PI的各向异性刻蚀形貌，往往需要在O2里增加侧壁保护性气体，目前公开专利或文献报道的方案是O2里增加CHF3或CF4等，该方法可以获得形貌一定程度的各向异性控制，但是因为含有F，所以对SiN或SiO2的选择比都不高，导致对相关材料的损伤较大，即无法兼顾刻蚀形貌和刻蚀选择比。PI is generally coated on the surface of SiN or SiO2 with the bottom infrared detector processing circuit, and dry anisotropic etching is required to obtain the support of the device and the top infrared radiation and contact holes. In order to control the anisotropic etching morphology of PI, it is often necessary to add sidewall protective gas in O2 . The current published patent or literature report is to add CHF3 or CF4 in O2 . This method can obtain the shape A certain degree of anisotropy control of the appearance, but because of containing F, the selectivity ratio of SiN or SiO2 is not high, resulting in greater damage to related materials, that is, it is impossible to balance the etching morphology and etching selectivity ratio.
因此，开发一种可以同时兼顾刻蚀形貌与刻蚀选择比的干法刻蚀聚酰亚胺的方法对半导体制造领域及其重要。Therefore, it is extremely important to the field of semiconductor manufacturing to develop a method for dry etching polyimide that can take into account both the etching morphology and the etching selectivity ratio.
发明内容Contents of the invention
本发明的目的至少部分地在于提供一种各向异性刻蚀图形化聚酰亚胺层的方法，可以同时兼顾刻蚀形貌与刻蚀选择比。The object of the present invention is at least partly to provide a method for anisotropically etching a patterned polyimide layer, which can take into account both etching morphology and etching selectivity.
根据本发明的一个方面，提供一种各向异性刻蚀图形化聚酰亚胺（PI）层的方法，该方法包括：进行主刻蚀，含有氧气、碳元素和氟元素的第一混合气体在等离子体形态对底层电路上需要去除的聚酰亚胺层的主要厚度层进行刻蚀，其中，第一混合气体中的碳元素和氟元素的原子个数比大于等于2:1，以保证对聚酰亚胺侧壁的有效保护；进行过刻蚀，含有氧气、碳元素第二混合气体在等离子体形态对底层电路上聚酰亚胺层的剩余厚度层进行刻蚀直至聚酰亚胺层刻蚀干净并实现图案化。According to one aspect of the present invention, there is provided a method for anisotropically etching a patterned polyimide (PI) layer, the method comprising: performing main etching, a first mixed gas containing oxygen, carbon and fluorine In the plasma state, the main thickness layer of the polyimide layer that needs to be removed on the bottom circuit is etched, wherein the atomic number ratio of the carbon element and the fluorine element in the first mixed gas is greater than or equal to 2:1, so as to ensure Effective protection of the polyimide sidewall; after etching, the second mixed gas containing oxygen and carbon elements etches the remaining thickness of the polyimide layer on the bottom circuit until the polyimide Layers are etched clean and patterned.
优选地，进行主刻蚀之前还包括：在底层电路上形成一层钝化层；在钝化层上形成一层聚酰亚胺层；在聚酰亚胺层上形成所需图案的掩膜层。Preferably, before performing the main etching, it also includes: forming a passivation layer on the underlying circuit; forming a polyimide layer on the passivation layer; forming a mask of the desired pattern on the polyimide layer Floor.
优选地，去除掩膜层，获得所需图案化的聚酰亚胺层图形。Preferably, the mask layer is removed to obtain the desired patterned polyimide layer pattern.
优选地，钝化层包括SiN和SiO2。Preferably, the passivation layer includes SiN and SiO2 .
优选地，掩膜层包括SiN、SiO2或a-Si中的任意一种或多种。Preferably, the mask layer includes any one or more of SiN, SiO2 or a-Si.
优选地，掩膜层包括金属Al、Ti、Cr或Ni中的任意一种或多种。Preferably, the mask layer includes any one or more of metals Al, Ti, Cr or Ni.
优选地，掩膜层为光刻胶层。Preferably, the mask layer is a photoresist layer.
优选地，第一混合气体包括C4F8、CF4、O2的混合气体。Preferably, the first mixed gas includes a mixed gas of C4 F8 , CF4 , and O2 .
优选地，第一混合气体中，C4F8、CF4、O2流量比(2~3):1:(1~2)。Preferably, in the first mixed gas, the flow ratio of C4 F8 , CF4 , and O2 is (2~3):1:(1~2).
优选地，第一混合气体包括C4F6、CF4、O2的混合气体。Preferably, the first mixed gas includes a mixed gas of C4 F6 , CF4 , and O2 .
优选地，第一混合气体中，C4F6、CF4、O2的流量比为2:1:1。Preferably, in the first mixed gas, the flow ratio of C4 F6 , CF4 , and O2 is 2:1:1.
优选地，第二混合气体包括含有CH4和O2的混合气体。Preferably, the second mixed gas includes a mixed gas containing CH4 and O2 .
优选地，第二混合气体中，CH4和O2的流量比为(1~2):1。Preferably, in the second mixed gas, the flow ratio of CH4 and O2 is (1~2):1.
优选地，过刻蚀过程中，第二混合气体不对钝化层进行刻蚀。Preferably, during the over-etching process, the second mixed gas does not etch the passivation layer.
采用本发明提供的各向异性刻蚀图形化聚酰亚胺层的方法，主刻蚀因为有含碳元素和氟元素的刻蚀气体进行侧壁保护，尤其是控制碳元素和氟元素的原子个数比大于等于2:1，可以保证对聚酰亚胺侧壁的刻蚀保护效果更佳，尤其是可以有效控制聚酰亚胺层的横向钻蚀，从而减少与设计尺寸的偏差，而过刻蚀因为含碳元素且不含氟元素，所以既可以保证形貌侧壁保护，又可以让刻蚀基本不损伤底部SiN和SiO2，有效地保护好结构，扩大了刻蚀工艺窗口。Using the method for anisotropically etching a patterned polyimide layer provided by the present invention, the main etching is protected by an etching gas containing carbon and fluorine, especially for controlling the atoms of carbon and fluorine The number ratio is greater than or equal to 2:1, which can ensure a better etching protection effect on the polyimide sidewall, especially can effectively control the lateral undercutting of the polyimide layer, thereby reducing the deviation from the design size, and Because over-etching contains carbon elements and does not contain fluorine elements, it can not only ensure the protection of the sidewall of the shape, but also allow the etching to basically not damage the bottom SiN and SiO2 , effectively protect the structure, and expand the etching process window.
附图说明Description of drawings
当结合附图进行阅读时，根据下面详细的描述可以最佳地理解本发明的各个方面。应该注意，根据工业中的标准实践，各种部件没有被按比例绘制。实际上，为了清楚地讨论，各个部件的尺寸可以任意地增加或减少。Aspects of the present invention are best understood from the following detailed description when read with the accompanying figures. It should be noted that, in accordance with the standard practice in the industry, various features are not drawn to scale. In fact, the dimensions of the various components may be arbitrarily increased or decreased for clarity of discussion.
图1为本发明实施例的一种各向异性刻蚀图形化聚酰亚胺层的方法流程图。FIG. 1 is a flowchart of a method for anisotropically etching a patterned polyimide layer according to an embodiment of the present invention.
图2为本发明另一实施例的一种各向异性刻蚀图形化聚酰亚胺层的方法流程图。FIG. 2 is a flowchart of a method for anisotropically etching a patterned polyimide layer according to another embodiment of the present invention.
图3为本发明实施例中刻蚀工艺效果示意图。FIG. 3 is a schematic diagram of an etching process effect in an embodiment of the present invention.
图4为本发明另一实施例中刻蚀工艺效果示意图。FIG. 4 is a schematic diagram of an etching process effect in another embodiment of the present invention.
具体实施方式Detailed ways
以下公开内容提供了多种不同实施例或实例，以实现本发明的不同特征。以下将描述组件和布置的具体实例以简化本发明。当然，这些仅是实例并且不意欲限制本发明。例如，在以下描述中，在第二部件上方或上形成第一部件可以包括第一部件和第二部件直接接触的实施例，也可以包括形成在第一部件和第二部件之间的附加部件使得第一部件和第二部件不直接接触的实施例。The following disclosure provides a number of different embodiments or examples for implementing different features of the invention. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are only examples and are not intended to limit the invention. For example, in the following description, forming a first feature over or on a second feature may include embodiments in which the first feature and the second feature are in direct contact, and may include additional features formed between the first feature and the second feature An embodiment such that the first part and the second part are not in direct contact.
此外，为了便于描述，本文中可以使用诸如“在...下方”、“在...下面”、“下部”、“在...上面”、“上部”等空间关系术语以描述如图所示的一个元件或部件与另一元件或部件的关系。除了图中示出的方位外，空间相对术语旨在包括器件在使用或操作中的不同方位。装置可以以其他方式定位（旋转90度或在其他方位），并且在本文中使用的空间关系描述符可以同样地作相应地解释。此外，本发明可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本发明提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。In addition, for the convenience of description, spatial relationship terms such as "below", "beneath", "lower", "above", "upper" may be used herein to describe The relationship of one element or component to another element or component is shown. Spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly. Furthermore, the present disclosure may repeat reference numerals and/or reference letters in different instances, such repetition is for simplicity and clarity and does not in itself indicate a relationship between the various embodiments and/or arrangements discussed. In addition, various specific process and material examples are provided herein, but one of ordinary skill in the art may recognize the use of other processes and/or the use of other materials.
如图1所示，根据本发明的一个实施例提供一种各向异性刻蚀图形化聚酰亚胺层的方法，包括：As shown in FIG. 1, an embodiment of the present invention provides a method for anisotropically etching a patterned polyimide layer, including:
步骤S16：进行主刻蚀，含有氧气、碳元素和氟元素的第一混合气体在等离子体形态对底层电路上需要去除的聚酰亚胺层的主要厚度层进行刻蚀，其中，第一混合气体中的碳元素和氟元素的原子个数比大于等于2:1，以保证对聚酰亚胺侧壁的有效保护；Step S16: Perform main etching, the first mixed gas containing oxygen, carbon and fluorine etches the main thickness layer of the polyimide layer to be removed on the underlying circuit in the form of plasma, wherein the first mixed gas The atomic number ratio of carbon and fluorine in the gas is greater than or equal to 2:1 to ensure effective protection of the polyimide sidewall;
步骤S18：进行过刻蚀，含有氧气、碳元素且不含氟元素的第二混合气体在等离子体形态对底层电路上聚酰亚胺层的剩余厚度层进行刻蚀直至聚酰亚胺层刻蚀干净并实现图案化。Step S18: Perform over-etching, the second mixed gas containing oxygen, carbon and fluorine-free etches the remaining thickness of the polyimide layer on the underlying circuit in the form of plasma until the polyimide layer is etched etch clean and achieve patterning.
本实施例中将底层电路上需要去除的聚酰亚胺使用含有但不局限氧气、碳元素和氟元素的第一混合气体的等离子体形态对聚酰亚胺层进行主刻蚀，主刻蚀采用氧气作为刻蚀气体，含碳元素和氟元素的气体为保护性气体，因为有保护性气体进行侧壁保护，所以刻蚀侧壁的保护效果更佳，尤其是控制碳元素与氟元素的原子个数比大于等于2:1时，可以有效控制聚酰亚胺横向钻蚀，从而减少与设计尺寸的偏差。而过刻蚀采用含碳元素气体作为保护性气体，氧气作为刻蚀气体进行过刻蚀，确保底部电路上的聚酰亚胺完全刻蚀干净。因为含碳元素而不含氟元素，所以基本对常规的材料SiN、SiO2，以及常用金属材料Al、Ti、W、TiN等均不会构成刻蚀损伤，所以达到了提升刻蚀钝化且不会损伤聚酰亚胺以外材料的目的，既可以保证形貌侧壁保护，又可以有效地保护好结构，扩大了刻蚀工艺窗口。In this embodiment, the polyimide that needs to be removed on the underlying circuit is mainly etched on the polyimide layer using the plasma form of the first mixed gas containing but not limited to oxygen, carbon and fluorine. Oxygen is used as the etching gas, and the gas containing carbon and fluorine is the protective gas. Because there is a protective gas for sidewall protection, the protection effect of the etched sidewall is better, especially the control of carbon and fluorine. When the atomic number ratio is greater than or equal to 2:1, the lateral undercut of polyimide can be effectively controlled, thereby reducing the deviation from the designed size. For over-etching, carbon-containing gas is used as a protective gas, and oxygen is used as an etching gas for over-etching to ensure that the polyimide on the bottom circuit is completely etched. Because it contains carbon elements and does not contain fluorine elements, it basically does not cause etching damage to conventional materials SiN, SiO2 , and commonly used metal materials Al, Ti, W, TiN, etc., so it achieves improved etching passivation and The purpose of not damaging materials other than polyimide can not only ensure the protection of the shape and side walls, but also effectively protect the structure and expand the etching process window.
如图2所示，并结合图3，根据本发明的另一实施例，提供一种各向异性刻蚀图形化聚酰亚胺层的方法，包括：As shown in FIG. 2 and in conjunction with FIG. 3, according to another embodiment of the present invention, a method for anisotropically etching a patterned polyimide layer is provided, including:
步骤S10：在底层电路上形成一层钝化层；Step S10: forming a passivation layer on the underlying circuit;
步骤S12：在钝化层上形成一层聚酰亚胺层；Step S12: forming a polyimide layer on the passivation layer;
步骤S14：在聚酰亚胺层上形成所需图案的掩膜层；Step S14: forming a mask layer with a desired pattern on the polyimide layer;
步骤S16：进行主刻蚀，含有氧气、碳元素和氟元素的第一混合气体在等离子体形态对底层电路上需要去除的聚酰亚胺层的主要厚度层进行刻蚀，其中，第一混合气体中的碳元素和氟元素的原子个数比大于等于2:1，以保证对聚酰亚胺侧壁的有效保护；Step S16: Perform main etching, the first mixed gas containing oxygen, carbon and fluorine etches the main thickness layer of the polyimide layer to be removed on the underlying circuit in the form of plasma, wherein the first mixed gas The atomic number ratio of carbon and fluorine in the gas is greater than or equal to 2:1 to ensure effective protection of the polyimide sidewall;
步骤S18：进行过刻蚀，含有氧气、碳元素且不含氟元素的第二混合气体在等离子体形态对底层电路上聚酰亚胺层的剩余厚度层进行刻蚀直至聚酰亚胺层刻蚀干净并实现图案化。Step S18: Perform over-etching, the second mixed gas containing oxygen, carbon and fluorine-free etches the remaining thickness of the polyimide layer on the underlying circuit in the form of plasma until the polyimide layer is etched etch clean and achieve patterning.
步骤S20：去除掩膜层，获得所需图案化的聚酰亚胺层图形。Step S20: removing the mask layer to obtain the desired patterned polyimide layer pattern.
本实施例中在所述底层电路101上形成钝化层102，钝化层102可以是SiN和SiO2材料。在钝化层102上形成聚酰亚胺层103。In this embodiment, a passivation layer 102 is formed on the underlying circuit 101, and the passivation layer 102 may be made of SiN and SiO2 materials. A polyimide layer 103 is formed on the passivation layer 102 .
使用掩膜层104在聚酰亚胺层103上形成所需图案，其中，掩膜层104为光刻胶层。优选地，掩膜层104包括SiN、SiO2或a-Si中的任意一种或多种。优选地，掩膜层104也可以包括金属Al、Ti、Cr或Ni中的任意一种或多种，使用SiN、SiO2或a-Si中的任意一种或多种以及金属Al、Ti、Cr或Ni中的任意一种或多种充当掩膜层104的效果优于使用光刻胶充当掩膜层104，因为金属耐等离子腐蚀的效果比传统的刻蚀方法效率更高，缺陷更少。A desired pattern is formed on the polyimide layer 103 using a mask layer 104 , wherein the mask layer 104 is a photoresist layer. Preferably, the mask layer 104 includes any one or more of SiN, SiO2 or a-Si. Preferably, the mask layer 104 may also include any one or more of metals Al, Ti, Cr or Ni, using any one or more of SiN, SiO2 or a-Si and metals Al, Ti, The effect of any one or more of Cr or Ni serving as the mask layer 104 is better than using photoresist as the mask layer 104, because the effect of metal plasma corrosion resistance is more efficient than traditional etching methods, and there are fewer defects .
将需要去除的聚酰亚胺层103使用含有但不局限氧气、碳元素和氟元素的第一混合气体的等离子体形态对聚酰亚胺层进行主刻蚀。具体地，采用ICP刻蚀机，使用气体为C4F8、CF4和O2，其中，C4F8、CF4和O2优选流量比为2:1:2，反应气体压力为20mT，电感上射频功率为1000W，下射频功率为100W，在此环境下，通过刻蚀速率按刻蚀厚度来确定刻蚀时间，刻蚀掉聚酰亚胺层103 80%的厚度，保证侧壁基本不钻蚀。其中，也可以使用C4F6替代C4F8作为保护性气体配合O2刻蚀聚酰亚胺层，其中， C4F6、CF4和O2的优选流量比为2:1:1。The polyimide layer 103 to be removed is mainly etched using a plasma form of a first mixed gas containing but not limited to oxygen, carbon and fluorine. Specifically, using an ICP etching machine, the gas used is C4 F8 , CF4 and O2 , wherein the preferred flow ratio of C4 F8 , CF4 and O2 is 2:1:2, and the reaction gas pressure is 20mT , the upper RF power of the inductor is 1000W, and the lower RF power is 100W. In this environment, the etching time is determined by the etching rate according to the etching thickness, and 80% of the thickness of the polyimide layer 103 is etched away to ensure that the side wall Basically no undercutting. Among them, C4 F6 can also be used instead of C4 F8 as a protective gas to cooperate with O2 to etch the polyimide layer, wherein the preferred flow ratio of C4 F6 , CF4 and O2 is 2:1: 1.
使用含有氧气、碳元素且不含氟元素的第二混合气体在等离子体形态对底层电路上聚酰亚胺层的剩余厚度层进行过刻蚀直至聚酰亚胺层为图案化。具体地，采用ICP刻蚀机，使用气体为CH4、O2，其中CH4和O2的优选流量比为1:1，反应气体压力为20mT，电感上射频功率为1000W，下射频功率为100W，在此环境下，通过刻蚀速率按刻蚀厚度来确定刻蚀时间，刻蚀掉聚酰亚胺层103剩余厚度，并增加一定量的过刻蚀，过刻蚀的刻蚀量按聚酰亚胺层原始厚度的30%~50%的过刻蚀量计算，保证侧壁基本不钻蚀。因为反应气体不含氟元素，所以对钝化层完全无刻蚀。Using the second mixed gas containing oxygen, carbon and fluorine-free to over-etch the remaining thickness of the polyimide layer on the underlying circuit in a plasma state until the polyimide layer is patterned. Specifically, using an ICP etching machine, the gas used is CH4 and O2 , wherein the preferred flow ratio of CH4 and O2 is 1:1, the reaction gas pressure is 20mT, the upper RF power of the inductor is 1000W, and the lower RF power is 100W, in this environment, the etching time is determined by the etching rate according to the etching thickness, the remaining thickness of the polyimide layer 103 is etched away, and a certain amount of over-etching is added, and the etching amount of over-etching is determined by Calculate the overetching amount of 30%~50% of the original thickness of the polyimide layer to ensure that the sidewall is basically not undercut. Because the reaction gas does not contain fluorine, there is no etching on the passivation layer at all.
最后去除掩膜层104，获得所需的聚酰亚胺层103图形。其中，可以使用丙酮去除充当掩膜层104的光刻胶，使用热磷酸，或稀释的HF，或硅腐蚀液TMAH去除充当掩膜层的SiN、SiO2或a-Si中的任意一种或多种，以及使用中强酸（如H2SO4，H3PO4，HNO3或多种酸的混合物）去除充当掩膜层的金属Al、Ti、Cr或Ni的任意一种或多种金属。Finally, the mask layer 104 is removed to obtain the desired pattern of the polyimide layer 103 . Wherein, acetone can be used to remove the photoresist serving as the mask layer 104, hot phosphoric acid, or diluted HF, or silicon etching solution TMAH can be used to remove any one of SiN, SiO2 or a-Si serving as the mask layer or Various, and use a medium strong acid (such as H2 SO4 , H3 PO4 , HNO3 or a mixture of multiple acids) to remove any one or more metals of Al, Ti, Cr or Ni that act as a mask layer .
本实施例中采用ICP干法刻蚀机，主刻蚀因为有含碳元素和氟元素的刻蚀气体进行侧壁保护，所以刻蚀侧壁的保护效果更佳，有效控制聚酰亚胺层的横向钻蚀，从而减少与设计尺寸的偏差，而过刻蚀因为含碳元素且不含氟元素，所以既可以保证形貌侧壁保护，又可以让气体不损伤底部SiN和SiO2，有效地保护好结构，扩大了刻蚀工艺窗口。In this embodiment, an ICP dry etching machine is used, and the sidewall is protected by the etching gas containing carbon and fluorine in the main etching, so the protection effect of the etched sidewall is better, and the polyimide layer is effectively controlled. The lateral undercutting can reduce the deviation from the design size, and the over-etching can not only ensure the protection of the side wall of the shape, but also prevent the gas from damaging the bottom SiN and SiO2 because it contains carbon elements and does not contain fluorine elements, effectively The structure is well protected, and the etching process window is expanded.
如图2所示，并结合图4，根据本发明的另一实施例，提供一种各向异性刻蚀图形化聚酰亚胺层的方法，包括：As shown in FIG. 2 and in conjunction with FIG. 4, according to another embodiment of the present invention, a method for anisotropically etching a patterned polyimide layer is provided, including:
步骤S10：在底层电路上形成一层钝化层；Step S10: forming a passivation layer on the underlying circuit;
步骤S12：在钝化层上形成一层聚酰亚胺层；Step S12: forming a polyimide layer on the passivation layer;
步骤S14：在聚酰亚胺层上形成所需图案的掩膜层；Step S14: forming a mask layer with a desired pattern on the polyimide layer;
步骤S16：进行主刻蚀，含有氧气、碳元素和氟元素的第一混合气体在等离子体形态对底层电路上需要去除的聚酰亚胺层的主要厚度层进行刻蚀，其中，第一混合气体中的碳元素和氟元素的原子个数比大于等于2:1，以保证对聚酰亚胺侧壁的有效保护；Step S16: Perform main etching, the first mixed gas containing oxygen, carbon and fluorine etches the main thickness layer of the polyimide layer to be removed on the underlying circuit in the form of plasma, wherein the first mixed gas The atomic number ratio of carbon and fluorine in the gas is greater than or equal to 2:1 to ensure effective protection of the polyimide sidewall;
步骤S18：进行过刻蚀，含有氧气、碳元素且不含氟元素的第二混合气体在等离子体形态对底层电路上聚酰亚胺层的剩余厚度层进行刻蚀直至聚酰亚胺层刻蚀干净并实现图案化。Step S18: Perform over-etching, the second mixed gas containing oxygen, carbon and fluorine-free etches the remaining thickness of the polyimide layer on the underlying circuit in the form of plasma until the polyimide layer is etched etch clean and achieve patterning.
步骤S20：去除掩膜层，获得所需图案化的聚酰亚胺层图形。Step S20: removing the mask layer to obtain the desired patterned polyimide layer pattern.
在本实施例中，步骤10至步骤14与上一实施例相同，在此不再赘述。主刻蚀采用的气体也相同，但气体配比不同。具体地，本实施例使用气体为C4F8、CF4、O2，其中， C4F8、CF4和O2优选流量比3:1:1，反应气体压力为20mT，电感上射频功率为1000W，下射频功率为100W，在此环境下，通过刻蚀速率按刻蚀厚度来确定刻蚀时间，刻蚀掉聚酰亚胺层103 80%的厚度，保证侧壁基本不钻蚀。其中，也可以使用C4F6替代C4F8作为保护性气体配合O2刻蚀聚酰亚胺层，其中，C4F6、CF4和O2的优选流量比为2:1:1。In this embodiment, Step 10 to Step 14 are the same as those in the previous embodiment, and will not be repeated here. The gas used in the main etching is also the same, but the gas ratio is different. Specifically, the gases used in this embodiment are C4 F8 , CF4 , and O2 , wherein the preferred flow ratio of C4 F8 , CF4 , and O2 is 3:1:1, the reaction gas pressure is 20 mT, and the radio frequency on the inductor The power is 1000W, and the lower RF power is 100W. In this environment, the etching time is determined by the etching rate according to the etching thickness, and 80% of the thickness of the polyimide layer 103 is etched away to ensure that the side wall is basically not corroded . Among them, C4 F6 can also be used instead of C4 F8 as a protective gas to cooperate with O2 to etch the polyimide layer, wherein the preferred flow ratio of C4 F6 , CF4 and O2 is 2:1: 1.
过刻蚀采用的气体也相同，但气体配比不同。具体地，本实施例使用气体为CH4、O2，其中CH4和O2的优选流量比为2:1，反应气体压力为20mT，电感上射频功率为1000W，下射频功率为100W，在此环境下，通过刻蚀速率按刻蚀厚度来确定刻蚀时间，刻蚀掉聚酰亚胺层103剩余厚度，并增加一定量的过刻蚀，过刻蚀的刻蚀量按聚酰亚胺层原始厚度的30%~50%的过刻蚀量计算，保证侧壁基本不钻蚀。因为反应气体不含氟元素，所以对钝化层完全无刻蚀。The gas used for over-etching is also the same, but the gas ratio is different. Specifically, the gases used in this embodiment are CH4 and O2 , wherein the preferred flow ratio of CH4 and O2 is 2:1, the reaction gas pressure is 20mT, the RF power of the inductor is 1000W, and the RF power of the lower inductor is 100W. Under this environment, the etching time is determined by the etching rate according to the etching thickness, the remaining thickness of the polyimide layer 103 is etched away, and a certain amount of over-etching is added. The overetching amount of 30%~50% of the original thickness of the amine layer is calculated to ensure that the sidewall is basically not undercut. Because the reaction gas does not contain fluorine, there is no etching on the passivation layer at all.
最后去除掩膜层104的方法与上一实施例相同，在此不再赘述。The method for finally removing the mask layer 104 is the same as that of the previous embodiment, and will not be repeated here.
本实施例与上一实施例的区别只是改变了刻蚀气体的比例，就能获得不同形貌的聚酰亚胺层。所以，通过调整第一混合气体和第二混合气体中各气体的比例可以控制刻蚀形貌和刻蚀选择比。同样地，本实施例主刻蚀因为有含碳元素和氟元素的刻蚀气体进行侧壁保护，所以刻蚀侧壁的保护效果更佳，有效控制聚酰亚胺层的横向钻蚀，从而减少与设计尺寸的偏差，而过刻蚀因为含碳元素且不含氟元素，所以既可以保证形貌侧壁保护，又可以让气体不损伤底部SiN和SiO2，有效地保护好结构，扩大了刻蚀工艺窗口。The difference between this embodiment and the previous embodiment is that the ratio of the etching gas is changed to obtain polyimide layers with different shapes. Therefore, the etching morphology and etching selectivity can be controlled by adjusting the ratio of each gas in the first mixed gas and the second mixed gas. Similarly, in this embodiment, the sidewall is protected by the etching gas containing carbon and fluorine in the main etching, so the protection effect of the etched sidewall is better, and the lateral undercutting of the polyimide layer is effectively controlled, thereby Reduce the deviation from the design size, and because the over-etching contains carbon elements and does not contain fluorine elements, it can not only ensure the protection of the topography sidewall, but also prevent the gas from damaging the bottom SiN and SiO2 , effectively protect the structure and expand The etching process window is defined.
以上论述了若干实施例的部件，使得本领域的技术人员可以更好地理解本发明的各个方面。本领域技术人员应该理解，可以很容易地使用本发明作为基础来设计或更改其他的处理和结构以用于达到与本发明所介绍实施例相同的目的和/或实现相同优点。本领域技术人员也应该意识到，这种等同构造并不背离本发明的精神和范围，并且在不背离本发明的精神和范围的情况下，本文中他们可以做出多种变化、替代以及改变。The components of several embodiments are discussed above so that those skilled in the art may better understand the various aspects of the invention. Those skilled in the art should understand that the present invention can be used as a basis to design or modify other processes and structures to achieve the same purpose and/or achieve the same advantages as the embodiments of the present invention. Those skilled in the art should also realize that such equivalent constructions do not depart from the spirit and scope of the present invention, and that they can make various changes, substitutions and changes herein without departing from the spirit and scope of the present invention .
| Application Number | Priority Date | Filing Date | Title |
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| CN201910401898.6ACN110137073A (en) | 2019-05-14 | 2019-05-14 | A method for anisotropic etching patterned polyimide layer |
| Application Number | Priority Date | Filing Date | Title |
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| CN201910401898.6ACN110137073A (en) | 2019-05-14 | 2019-05-14 | A method for anisotropic etching patterned polyimide layer |
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| CN110137073Atrue CN110137073A (en) | 2019-08-16 |
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| CN201910401898.6APendingCN110137073A (en) | 2019-05-14 | 2019-05-14 | A method for anisotropic etching patterned polyimide layer |
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