CN109946261B - Terahertz wave detection device with adjustable absorption wavelength and preparation method thereof - Google Patents

Abstract

Translated fromChinese

本发明公开了一种吸收波长可调的太赫兹波探测装置及其制备方法，制备方法包括：提供衬底，在所述衬底上制作形成支撑层；在所述支撑层上制作形成热敏层；在所述支撑层和所述热敏层上制作形成导电层；在所述热敏层上制作形成吸收层；在所述衬底的背向所述吸收层的表面上制作通光孔；提供基座和可动反射镜，将所述可动反射镜安装于所述基座上；将所述基座与所述衬底固定连接，使得所述吸收层与所述可动反射镜的反射面平行对准。本发明公开的制备方法，工艺简单，将探测器和调谐波长的可动反射镜分离开，可使得探测装置的探测范围覆盖整个太赫兹波段，同时新的薄膜工艺有助于提高探测率，降低热响应时间常数。

The invention discloses a terahertz wave detection device with adjustable absorption wavelength and a preparation method thereof. The preparation method includes: providing a substrate, fabricating and forming a support layer on the substrate; fabricating and forming a thermosensitive layer on the support layer forming a conductive layer on the support layer and the heat-sensitive layer; forming an absorption layer on the heat-sensitive layer; making a light-through hole on the surface of the substrate facing away from the absorption layer ; provide a base and a movable mirror, and install the movable mirror on the base; fix the base with the substrate, so that the absorption layer and the movable mirror The reflective surfaces are aligned parallel to each other. The preparation method disclosed by the invention has simple process, separates the detector and the movable reflection mirror for tuning the wavelength, so that the detection range of the detection device covers the entire terahertz band, and the new thin film technology helps to improve the detection rate and reduce the Thermal response time constant.

Description

Terahertz wave detection device with adjustable absorption wavelength and preparation method thereof

Technical Field

The invention relates to the field of terahertz wave detection, in particular to a terahertz wave detection device with adjustable absorption wavelength and a preparation method thereof.

Background

The uncooled microbolometer originates from the end of the 80's of the last century, and the detector is designed for the far infrared band of 8-14 microns at the beginning, and can theoretically detect the heat radiation light covering the range from near infrared to millimeter wave according to the heat radiation detection mechanism. Through the development of the last 30 years, the uncooled microbolometer based on the vanadium oxide thermal resistance sensitive film makes great progress in the aspect of detection rate, which can reach 10⁹cm﹒Hz^1/2The temperature/w is higher than that of a deuterated L-alanine triglycidyl sulfate (DLATGS) pyroelectric detector commonly used in the terahertz wave detection field by one order of magnitude, but is lower than that of a refrigeration type detector (a liquid helium refrigeration superconducting detector) by at least one order of magnitude, and the current uncooled microbolometer is limited in that the structure and the material do not reach the background noise detection limit at room temperature, and has a certain improvement space.

At present, most terahertz wave detection fields use pyroelectric detectors, the detection wavelength range of the pyroelectric detectors is large, the defect that the detector rate is slightly low can be overcome by using a high-power light source, but for weak and slowly-changed terahertz wave signals, uncooled microbolometers have more advantages, unfortunately, the terahertz wave absorption range of a single uncooled microbolometer is too narrow, the wavelength absorption range is determined by the distance between a suspended thermosensitive film bridge floor and a bottom reflector, and if interested terahertz wave bands are detected, the distance needs to be changed, and the detectors need to be specially customized.

In order to realize the detection of the wide-spectrum terahertz wave, the invention patent of the patent number US7968846B2 provides an uncooled micrometering bolometer with adjustable absorption wavelength, the uncooled micrometering bolometer with adjustable absorption wavelength provided by the invention patent utilizes the electrostatic attraction between a heat-sensitive film conductive bridge leg and a terahertz wave resonance enhancing reflector, the distance between a heat-sensitive film absorption bridge floor and the reflector is adjusted by voltage, but the electrostatic force provided by the uncooled micrometering bolometer is limited due to the small bridge leg area, under the condition of external 100V voltage, the distance change is not more than 2 mu m, the absorption center wavelength range is not more than 8 mu m, and the entire terahertz wave band (0.1-10 THz) can not be covered far. In addition, the original design and process are still adopted, particularly when a resonant cavity is manufactured, a polyimide sacrificial layer structure is continuously adopted, and because the layer cannot bear the high temperature of more than 300 ℃, the upper layer film, including the silicon nitride film and the vanadium oxide film, cannot adopt a high-temperature coating process, so that the high-temperature coating process is not helpful for thinning a silicon nitride supporting layer (reducing the thermal response time) and reducing the defects of a vanadium oxide thermal resistance sensitive layer (reducing the 1/f low-frequency noise). Furthermore, the distance between the deck and the mirror is absorbed by the voltage-adjusting heat-sensitive film, which causes the legs to deform, causing the overall deck impedance to fluctuate, producing current noise.

Disclosure of Invention

In view of the defects in the prior art, the invention provides the preparation method of the terahertz wave detection device with adjustable absorption wavelength, which is simple in preparation process, and the prepared detection device can realize the large-range tuning of the absorption wavelength of the terahertz wave.

In order to achieve the purpose, the invention adopts the following technical scheme:

a preparation method of a terahertz wave detection device with adjustable absorption wavelength comprises the following steps:

providing a substrate, and manufacturing and forming a supporting layer on the substrate;

manufacturing and forming a heat-sensitive layer on the supporting layer;

forming a conductive layer on the support layer and the thermosensitive layer;

manufacturing and forming an absorption layer on the thermosensitive layer;

manufacturing a light through hole on the surface of the substrate, which faces away from the absorption layer;

the base of the movable mirror is fixedly attached to the substrate so that the absorption layer is aligned with the reflection surface of the movable mirror.

Preferably, after the thermosensitive layer is formed on the supporting layer, the preparation method further includes etching two side portions of the thermosensitive layer.

Preferably, after the conductive layer is formed on the support layer and the heat-sensitive layer, the preparation method further includes etching a portion of the conductive layer on the heat-sensitive layer so that the heat-sensitive layer is exposed.

Preferably, after the conductive layer is formed on the support layer and the heat-sensitive layer, the preparation method further includes forming an insulating layer on the conductive layer and the heat-sensitive layer.

Preferably, after the insulating layer is formed on the conductive layer and the heat-sensitive layer, the preparation method further includes etching partial areas of the insulating layer, the conductive layer and the support layer on both sides of the heat-sensitive layer to form a plurality of continuous elongated holes in the insulating layer, the conductive layer and the support layer.

Preferably, a specific method of fixedly connecting the base and the substrate so that the absorption layer is aligned with the reflection surface of the movable mirror is: and manufacturing and forming a plurality of sticking columns, and respectively sticking two ends of the sticking columns to the base and the substrate.

Preferably, the support layer is formed on the substrate by a low-pressure vapor deposition process, the support layer is a silicon nitride layer, and the thickness of the support layer is 20-30 nm.

Preferably, the thermosensitive layer is formed on the supporting layer by adopting a magnetron sputtering process, the thermosensitive layer is a vanadium oxide layer, and the thickness of the thermosensitive layer is 5-10 nm.

Preferably, the absorbing layer is formed on the part, facing the thermosensitive layer, of the insulating layer by adopting a magnetron sputtering process, wherein the absorbing layer is a nichrome layer, and the thickness of the absorbing layer is 5 nm.

The invention also discloses a terahertz wave detection device with adjustable absorption wavelength, which comprises a base, a movable reflector and a detector;

the detector comprises a substrate, a supporting layer arranged on the substrate, a heat-sensitive layer arranged on the supporting layer, an absorption layer arranged on the heat-sensitive layer and conductive layers arranged on two sides of the heat-sensitive layer and electrically connected with the heat-sensitive layer;

the base is arranged opposite to the detector, the movable reflector is arranged on the base, the reflecting surface of the movable reflector is opposite to the absorption layer, and the movable reflector is used for moving along the direction vertical to the reflecting surface; and the substrate is provided with a light through hole for exposing the absorption layer and the movable reflector.

The embodiment of the invention discloses a preparation method of a terahertz wave detection device with adjustable absorption wavelength, which has simple process, separates a detector from a movable reflector for tuning the wavelength, enables the detection range of the detection device to cover the whole terahertz wave band, and simultaneously facilitates the improvement of the detection rate and the reduction of the thermal response time constant by a new thin film process.

Drawings

Fig. 1A to 1I are flow charts of a manufacturing process of a detection device according to an embodiment of the present invention.

FIG. 2 is a schematic diagram of a detector according to an embodiment of the present invention.

Fig. 3 is a schematic diagram of a detection apparatus according to an embodiment of the present invention.

Detailed Description

In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be further described in detail with reference to the accompanying drawings and embodiments of a single-point detector. It should be understood that the embodiments described herein are merely illustrative of the present invention, and the structure and fabrication method are equally applicable to a line detector, and are not intended to limit the present invention.

Fig. 1A to 1H show process steps of a method for manufacturing a terahertz wave detection device with adjustable absorption wavelength according to the present embodiment;

step 1, as shown in fig. 1A, asubstrate 31 is provided, and asupport layer 32 is formed on thesubstrate 31.

Specifically, an ultra-flat double-side polished single crystal silicon wafer is selected as thesubstrate 31, and the thickness uniformity of thesubstrate 31 does not exceed 200 nm. Under the temperature environment of about 800 ℃, a silicon nitride film with the thickness of 20-30 nm and high elastic modulus is grown on thesubstrate 31 by using a low-pressure vapor deposition method to form the supportinglayer 32.

Step 2, as shown in fig. 1B, athermosensitive layer 33 is formed on thesupport layer 32.

Specifically, the material for forming thethermosensitive layer 33 is preferably vanadium oxide having good thermoelectric properties. Further, a magnetron sputtering process is preferably adopted, and a vanadium oxide heat-sensitive film with the thickness of 5-10 nm is deposited on the surface of the supportinglayer 32 at the high temperature of about 500 ℃.

And 3, as shown in fig. 1C, preferably, a photoetching process is adopted, and the portions on the two sides of the vanadium oxide thermosensitive film are etched by using chlorine reactive ions, so that only the middle portion of thethermosensitive layer 33 is reserved. Of course, in other implementations, thethermosensitive layer 33 shown in fig. 1C may be fabricated directly on thesupport layer 30 without etching thethermosensitive layer 33.

Step 4, as shown in fig. 1D, aconductive layer 35 is formed on thesupport layer 32 and thethermosensitive layer 33.

Specifically, the material of theconductive layer 35 is preferably a nichrome material. Further, a nichrome layer having a thickness of 10nm is grown on thethermosensitive layer 33 and the supportinglayer 32 by a sputtering process to form aconductive layer 35 covering thethermosensitive layer 33 and the supportinglayer 32, theconductive layer 35 serving to output an electric signal of thethermosensitive layer 33 to an external circuit.

And 5, as shown in fig. 1E, etching a part of the nichrome layer on thethermosensitive layer 33 by using chlorine/sulfur hexafluoride reactive ions to formconductive layers 35 respectively on two sides of thethermosensitive layer 33. This prevents theabsorber layer 34 from being subsequently formed in electrical contact with theconductive layer 35.

Further, theconductive layer 35 includes amain body portion 35a attached to thesupport layer 32, a firstconductive portion 35b formed by bending from an end of themain body portion 35a close to the heat-sensitive layer 33, and a secondconductive portion 35c formed by bending from an end of the firstconductive portion 35b, the firstconductive portion 35b is attached to a side wall of the heat-sensitive layer 33, and the secondconductive portion 35c is attached to a surface of the heat-sensitive layer 33 facing away from thesupport layer 32, so that stable contact between theconductive layer 35 and the heat-sensitive layer 33 can be ensured, and conductive stability of the two is improved.

Step 6, as shown in fig. 1F, aninsulating layer 36 is formed on theconductive layer 35 and thethermosensitive layer 33.

In particular, forming a dense silicon nitride insulating layer with a thickness of 10nm on theconductive layer 35 and thethermosensitive layer 33 by low temperature chemical vapor deposition can further prevent theabsorption layer 34 from being electrically conductive in contact with theconductive layer 35.

Step 7, as shown in fig. 1F, forms anabsorption layer 34 on the insulatinglayer 36.

As a preferred embodiment, a nichrome layer with a thickness of 5nm is grown on the insulatinglayer 36 by using a sputtering process, and portions of the nichrome layer on both sides of thethermosensitive layer 33 are etched by using a chlorine/sulfur hexafluoride reactive ion etching process through a photolithography etching process, so that only the portions of the nichrome layer facing thethermosensitive layer 33 remain, thereby forming theabsorption layer 34.

Step 8, as shown in fig. 1G, a plurality of continuous elongated holes are formed on the insulatinglayer 36, theconductive layer 35 and the supportinglayer 32.

Specifically, a chlorine/sulfur hexafluoride dry etching process is used to etch partial areas of the insulatinglayer 36 and theconductive layer 35 on both sides of thethermosensitive layer 33, and then a hot phosphoric acid wet etching process is used to etch corresponding areas of the supportinglayer 32, so as to form a plurality of spacedlong holes 37 on the insulatinglayer 36, theconductive layer 35 and the supportinglayer 32. As a preferred embodiment, a plurality ofelongated holes 37 are alternately arranged, so that the insulatinglayer 36, theconductive layer 35 and thesupport layer 32 form an S-shaped multi-period heat-insulating leg structure, which prolongs the heat propagation path between the heat-sensitive layer 33 and theabsorption layer 34 to the edge of thesubstrate 31, and reduces the heat loss of the heat-sensitive layer 33 and theabsorption layer 34. In addition, the thermal conductivity parameters ofprobe 30 can be adjusted by adjusting the number and width ofelongated holes 37.

Step 9, as shown in fig. 1H and as shown in fig. 2, alight passing hole 31a is formed on the surface of thesubstrate 31 facing away from theabsorption layer 34.

Specifically, a xenon fluoride gas dry etching process is used to etch from the back of thesubstrate 31 until thewhole substrate 31 is etched through, and a light throughhole 31a exposing theabsorption layer 34 and the S-shaped multi-period heat insulation leg structure is formed, so that terahertz waves can enter the detection device from the light throughhole 31a conveniently.

Step 10, as shown in fig. 1I and 3, amovable mirror 20 is provided, and thebase 10 of themovable mirror 20 is fixedly connected to thesubstrate 31 so that theabsorption layer 34 is aligned with the reflection surface of themovable mirror 20.

In a preferred embodiment, themovable mirror 20 is a mems displacement mirror, and the moving distance of the mems displacement mirror can be controlled by an external voltage, and the step range of the mems displacement mirror can reach 500 μm, so that the detection range of thedetector 30 can cover the entire terahertz band.

Specifically, theabsorption layer 34 is aligned with the reflection surface of themovable mirror 20, a plurality ofpaste columns 40 with a thickness of 2-4 μm are used, and the two ends of the plurality ofpaste columns 40 are respectively pasted on the surface of thebase 10 and the surface of thesubstrate 31, so that thebase 10, themovable mirror 20 and thedetector 30 form a terahertz wave detection device with adjustable absorption wavelength.

As shown in fig. 3, a terahertz wave detection device with adjustable absorption wavelength according to an embodiment of the present invention includes amovable mirror 20 and adetector 30. As shown in fig. 2, theprobe 30 includes asubstrate 31, asupport layer 32 provided on thesubstrate 31, athermosensitive layer 33 provided on thesupport layer 32, anabsorption layer 34 provided on thethermosensitive layer 33, andconductive layers 35 provided on both sides of thethermosensitive layer 33 and electrically connected to thethermosensitive layer 33. Thebase 10 of themovable mirror 20 is disposed opposite to thesubstrate 31, themovable mirror 20 is disposed on thebase 10, the reflecting surface of themovable mirror 20 faces the absorbinglayer 34, themovable mirror 20 is movable in a direction perpendicular to the reflecting surface, the reflecting surface and the absorbinglayer 34 form a resonator, and thesubstrate 31 is provided with alight transmitting hole 31a for exposing the absorbinglayer 34 and themovable mirror 20. Thus, external terahertz waves can enter through thelight transmitting hole 31a and are reflected to theabsorption layer 34 through themovable mirror 20, theabsorption layer 34 generates heat and transmits the generated heat to thethermosensitive layer 33, the resistance of thethermosensitive layer 33 is changed, and the signal of the terahertz waves can be detected by detecting the change of the resistance of thethermosensitive layer 33. In addition, the distance between the reflecting surface and theabsorption layer 34 is adjusted through adjusting the movable reflectingmirror 20, so that the absorption of the terahertz waves of different wave bands by the detection device is adjusted.

The invention discloses a terahertz wave detection device with adjustable absorption wavelength and a preparation method thereof, and the terahertz wave detection device has the following beneficial effects:

(1) the detector is separated from the movable reflector for tuning the wavelength, and the mature micro-electro-mechanical system displacement reflector large-range stepping distance (up to 500 mu m) is fully utilized, so that the detection range of the detection device covers the whole terahertz waveband (0.1-10 THz).

(2) The use of a polyimide sacrificial layer (a necessary step for manufacturing a classical detector) is abandoned, the silicon nitride and vanadium oxide films are directly manufactured on the monocrystalline silicon wafer substrate at a high temperature, and the terahertz wave detection is realized by using a mode of opening a hole in the back of the substrate and transmitting light, so that the manufacturing process is simplified, the sensitivity of the detector is improved, and the thermal response time constant is reduced.

(3) By adopting the separation structure of the detector and the tuning device, the bridge surface of the detector cannot deform and generate extra noise signals in the tuning process.

The foregoing is directed to embodiments of the present application and it is noted that numerous modifications and adaptations may be made by those skilled in the art without departing from the principles of the present application and are intended to be within the scope of the present application.

Claims (10)

Translated fromChinese

1.一种吸收波长可调的太赫兹波探测装置的制备方法，其特征在于，包括：1. a preparation method of a terahertz wave detection device with adjustable absorption wavelength, is characterized in that, comprising:提供衬底(31)，在所述衬底(31)上制作形成支撑层(32)；A substrate (31) is provided, and a support layer (32) is formed on the substrate (31);在所述支撑层(32)上制作形成热敏层(33)；forming a thermosensitive layer (33) on the support layer (32);在所述支撑层(32)和所述热敏层(33)上制作形成导电层；A conductive layer is formed on the support layer (32) and the thermosensitive layer (33);在所述热敏层(33)上制作形成吸收层(34)；forming an absorption layer (34) on the thermosensitive layer (33);在所述衬底(31)的背向所述吸收层(34)的表面上制作通光孔(31a)；making light-passing holes (31a) on the surface of the substrate (31) facing away from the absorption layer (34);将可动反射镜(20)的基座(10)与所述衬底(31)固定连接，使得所述吸收层(34)与所述可动反射镜(20)的反射面对准。The base (10) of the movable mirror (20) is fixedly connected to the substrate (31), so that the absorption layer (34) is aligned with the reflection surface of the movable mirror (20).2.根据权利要求1所述的吸收波长可调的太赫兹波探测装置的制备方法，在所述支撑层(32)上制作形成所述热敏层(33)之后，所述制备方法还包括对所述热敏层(33)的两侧部分进行刻蚀。2. The preparation method of the terahertz wave detection device with adjustable absorption wavelength according to claim 1, after the thermosensitive layer (33) is formed on the support layer (32), the preparation method further comprises: Both sides of the heat-sensitive layer (33) are etched.3.根据权利要求2所述的吸收波长可调的太赫兹波探测装置的制备方法，其特征在于，在所述支撑层(32)和所述热敏层(33)上制作形成所述导电层(35)之后，所述制备方法还包括对所述热敏层(33)上的部分所述导电层(35)进行刻蚀，使得所述热敏层(33)暴露。3. The preparation method of the terahertz wave detection device with adjustable absorption wavelength according to claim 2, wherein the conductive layer is fabricated and formed on the support layer (32) and the thermosensitive layer (33). After the layer (35), the preparation method further includes etching a part of the conductive layer (35) on the heat-sensitive layer (33), so that the heat-sensitive layer (33) is exposed.4.根据权利要求3所述的吸收波长可调的太赫兹波探测装置的制备方法，其特征在于，在所述支撑层(32)和所述热敏层(33)上制作形成所述导电层(35)之后，所述制备方法还包括在所述导电层(35)和所述热敏层(33)上制作形成绝缘层(36)。4. The method for preparing a terahertz wave detection device with adjustable absorption wavelength according to claim 3, wherein the conductive layer is fabricated and formed on the support layer (32) and the thermosensitive layer (33). After the layer (35), the preparation method further includes forming an insulating layer (36) on the conductive layer (35) and the heat-sensitive layer (33).5.根据权利要求4所述的吸收波长可调的太赫兹波探测装置的制备方法，其特征在于，在所述导电层(35)和所述热敏层(33)上制作形成绝缘层(36)之后，所述制备方法还包括对所述热敏层(33)两侧的所述绝缘层(36)、所述导电层(35)和所述支撑层(32)的部分区域进行刻蚀，以在所述绝缘层(36)、所述导电层(35)和所述支撑层(32)上形成多个连续的长条孔(37)。5. The preparation method of the terahertz wave detection device with adjustable absorption wavelength according to claim 4, wherein an insulating layer ( 36) After that, the preparation method further comprises engraving the insulating layer (36), the conductive layer (35) and the partial regions of the support layer (32) on both sides of the heat-sensitive layer (33). etching to form a plurality of continuous elongated holes (37) on the insulating layer (36), the conductive layer (35) and the support layer (32).6.根据权利要求1所述的吸收波长可调的太赫兹波探测装置的制备方法，其特征在于，将所述基座(10)与所述衬底(31)固定连接，使得所述吸收层(34)与所述可动反射镜(20)的反射面对准的具体方法为：制作形成多个粘贴柱(40)，将所述多个粘贴柱(40)的两端分别粘贴于所述基座(10)和所述衬底(31)。6 . The method for preparing a terahertz wave detection device with adjustable absorption wavelength according to claim 1 , wherein the base ( 10 ) is fixedly connected to the substrate ( 31 ), so that the absorption The specific method for aligning the layer (34) with the reflective surface of the movable mirror (20) is as follows: forming a plurality of sticking posts (40), and sticking both ends of the multiple sticking columns (40) on the the base (10) and the substrate (31).7.根据权利要求1所述的吸收波长可调的太赫兹波探测装置的制备方法，其特征在于，采用低压气相沉积工艺在所述衬底(31)上制作形成所述支撑层(32)，所述支撑层(32)为氮化硅层，所述支撑层(32)的厚度范围为20～30nm。7. The method for preparing a terahertz wave detection device with adjustable absorption wavelength according to claim 1, wherein the support layer (32) is formed on the substrate (31) by a low pressure vapor deposition process. , the support layer (32) is a silicon nitride layer, and the thickness of the support layer (32) ranges from 20 to 30 nm.8.根据权利要求1所述的吸收波长可调的太赫兹波探测装置的制备方法，其特征在于，采用磁控溅射工艺在所述支撑层(32)上制作形成所述热敏层(33)，所述热敏层(33)为氧化钒层，所述热敏层(33)的厚度为5～10nm。8. The preparation method of the terahertz wave detection device with adjustable absorption wavelength according to claim 1, wherein the thermosensitive layer ( 33), the thermosensitive layer (33) is a vanadium oxide layer, and the thickness of the thermosensitive layer (33) is 5-10 nm.9.根据权利要求4所述的吸收波长可调的太赫兹波探测装置的制备方法，其特征在于，采用磁控溅射工艺在所述绝缘层(36)正对所述热敏层(33)的部分制作形成所述吸收层(34)，所述吸收层(34)为镍铬合金层，所述吸收层(34)的厚度为5nm。9. The method for preparing a terahertz wave detection device with adjustable absorption wavelength according to claim 4, characterized in that, a magnetron sputtering process is used in the insulating layer (36) facing the thermosensitive layer (33). ) to form the absorption layer (34), the absorption layer (34) is a nickel-chromium alloy layer, and the thickness of the absorption layer (34) is 5 nm.10.一种吸收波长可调的太赫兹波探测装置，其特征在于，包括可动反射镜(20)和探测器(30)；10. A terahertz wave detection device with adjustable absorption wavelength, characterized in that it comprises a movable mirror (20) and a detector (30);所述探测器(30)包括衬底(31)、设于所述衬底(31)上的支撑层(32)、设于所述支撑层(32)上的热敏层(33)、设于所述热敏层(33)上的吸收层(34)和设于所述热敏层(33)两侧且与所述热敏层(33)电连接的导电层(35)；The detector (30) comprises a substrate (31), a support layer (32) arranged on the substrate (31), a thermosensitive layer (33) arranged on the support layer (32), and a device an absorbing layer (34) on the thermosensitive layer (33) and a conductive layer (35) provided on both sides of the thermosensitive layer (33) and electrically connected to the thermosensitive layer (33);所述可动反射镜(20)的基座(10)与所述探测器(30)相对设置，且所述可动反射镜(20)的反射面与所述吸收层(34)相向，所述可动反射镜(20)用于沿着垂直于所述反射面的方向上活动；所述衬底(31)上设有用于暴露所述吸收层(34)和所述可动反射镜(20)的通光孔(31a)。The base (10) of the movable mirror (20) is arranged opposite to the detector (30), and the reflection surface of the movable mirror (20) faces the absorption layer (34), so The movable mirror (20) is used to move in a direction perpendicular to the reflective surface; the substrate (31) is provided with an arrangement for exposing the absorption layer (34) and the movable mirror ( 20) through the light hole (31a).

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