Summary of the invention
Problems solved by the invention is to provide a kind of target material assembly manufacturing method, reduces first substrate and the second substrate coldBut the deflection in treatment process improves the quality of target material assembly to obtain the good target material assembly of flatness.
To solve the above problems, the present invention provides a kind of target material assembly manufacturing method, comprising: two sets of assembly units are provided,The assembly unit includes first substrate and the second substrate that is in contact with the first substrate surface, wherein first baseThe type of plate is target or backboard, and the type of the second substrate is target or backboard, the type of the first substrate with it is describedThe type of the second substrate is different；A set of assembly unit is placed on another set of assembly unit, and makes two sets of assembly unitsThe first substrate abuts each other；Two sets of assembly units are placed in jacket；Using Hot Isostatic Pressing Diffusion technique pairFirst substrate and the second substrate in two sets of assembly units are diffused soldering, to form two sets of target material assemblies, andIn the Diffusion Welding treatment process, the first substrate of two sets of assembly units is abutted each other；To two sets of target groupsPart carries out cooling treatment, and the cooling treatment carries out under pressurized environment；After carrying out cooling treatment to two sets of target material assemblies,Remove the jacket.
Optionally, during the cooling treatment, when the temperature of two sets of target material assemblies is greater than or equal to 100 DEG CWhen, jacket external pressure is powerful in 50MPa.
Optionally, the Diffusion Welding processing includes heating pressurized treatments.
Optionally, the temperature of the heating pressurized treatments is 300~800 DEG C, and pressure is 100~200MPa, when lastingBetween be 2~5h.
Optionally, after two sets of assembly units being placed in jacket, the jacket is de-gassed.
Optionally, the temperature of the degassing process is 100~500 DEG C；Time is 1~5h.
Optionally, after carrying out the degassing process to the jacket, the vacuum degree in the jacket is 10-1~10-4Pa。
Optionally, the thermal expansion coefficient of the first substrate is less than the thermal expansion coefficient of the second substrate.
Optionally, the method for realizing that the first substrate of two sets of assembly units abuts each other includes: by describedThe first substrate surface of two sets of assembly units contacts with each other, so that the first substrate of two sets of assembly units is mutualAgainst.
Optionally, the method for realizing that the first substrate of two sets of assembly units abuts each other includes: offer spacer, instituteSpacer is stated with opposite obverse and reverse；Wherein, the first substrate surface of a set of assembly unit and spacer frontIt is in contact, the first substrate surface of another set of assembly unit is in contact with the spacer reverse side, so that two sets of component listsThe first substrate of member abuts each other.
Optionally, target material assembly manufacturing method as claimed in claim 9, which is characterized in that the spacer is positive thickRugosity is less than or equal to 0.8 μm；The roughness of the spacer reverse side is less than or equal to 0.8 μm.
Optionally, the spacer with a thickness of 0.1~3mm.
Optionally, the material of the spacer is copper, Stainless Steel, graphite paper or mica sheet.
Optionally, the face in the first substrate far from the second substrate is abutment face, and the abutment face is coarseDegree is less than or equal to 0.8 μm.
Optionally, the material of the target is titanium, tantalum, tungsten, aluminium or copper.
Optionally, the material of the backboard is aluminium, copper, aluminium alloy or copper alloy.
Compared with prior art, technical solution of the present invention has the advantage that
In the present invention, first substrate and the second substrate being in contact with the first substrate surface constitute assembly unit；AndA set of assembly unit is placed on another set of assembly unit, and abuts each other the first substrate of two sets of assembly units；UsingHot Isostatic Pressing Diffusion technique is diffused soldering with the second substrate to the first substrate in two sets of assembly units,To form two sets of target material assemblies；To two sets of target material assemblies carry out cooling treatment, the cooling treatment under pressurized environment intoRow；Since during cooling treatment, jacket is in hyperbaric environment, the deformation of two sets of target material assemblies is by high compression ring outside jacketThe inhibition in border.Specifically, two sets of target material assemblies have opposite deformation tendency, which to form gap in jacketTrend, and hyperbaric environment will inhibit the generation in the gap, and then can inhibit the deformation of target material assembly.
In optinal plan, the thermal expansion coefficient of the first substrate is less than the thermal expansion coefficient of the second substrate, thusDuring the cooling treatment, single first substrate for covering target material assembly, which has, is directed toward described first along the second substrateThe trend of orientation substrate protrusion.The first substrate of two sets of target material assemblies abuts each other, it is single cover target material assembly both byStress from inside, and the active force from another set of target material assembly being subject to, and the side of the active force and the stressTo opposite and equal in magnitude, thus the deformation of single set target material assembly is controlled.It is mutually limited between two sets of target material assemblies, it canThe deflection of each set target material assembly is reduced, so that obtaining has the good target material assembly of flatness.
In optinal plan, the positive roughness of spacer is less than or equal to 0.8 μm；The spacer reverse side it is coarseDegree is less than or equal to 0.8 μm.The positive and negative surface roughness of spacer is lower, i.e., front and back sides are more smooth, in diffusion welding process,Atom diffusion is more difficult to happen between the spacer and the first substrate being in contact, to avoid the spacer and firstSubstrate welds together, therefore after removing the jacket, and the target material assembly is easy to separate from the spacer surface.
Specific embodiment
It can be seen from background technology that the target material assembly quality of prior art manufacture is to be improved.
It is analyzed now in conjunction with a kind of target material assembly manufacturing method.With reference to Fig. 1, Fig. 1 is a kind of target material assembly manufacturing methodStructural schematic diagram, target 100 and backboard 200 are provided, target 100 is placed in 200 surface of backboard, to the target 100 withBackboard 200 is diffused soldering and cooling treatment, forms target material assembly.
The above method manufacture target material assembly it is of poor quality.
It is found through analysis, leading to the ropy reason of target material assembly includes: 100 material of target and 200 material of backboardThermal expansion coefficient have differences, during the cooling treatment, the target 100 and backboard 200 due to stress release notIt synchronizes and deforms.Specifically, when the thermal expansion coefficient of the target 100 is less than the thermal expansion coefficient of backboard 200, it is describedTarget 100 has the trend that 100 direction of target protrusion is directed toward along the backboard 200；When the thermal expansion system of the target 100When number is greater than the thermal expansion coefficient of backboard 200, the backboard 200 is convex with 200 direction of backboard is directed toward along the target 100The trend risen.
Since the target material assembly surface smoothness that the deformation of the target 100 and backboard 200 results in is poor, thus coldBut after treatment, it is also necessary to be adjusted using target material assembly of the mechanical system to formation.When the target 100 is brittleness materialWhen material, for example, tungsten when, it is described adjustment be easy to cause target 100 crack.In addition, the adjustment is to target material assembly surfaceThe improvement result of flatness is limited, for the target material assembly for obtaining high-flatness, it is also necessary to carry out vehicle to the target material assembly surfaceIt cuts, a part of raw material is caused to be wasted.
To solve the above problems, proposing a kind of target material assembly manufacturing method, comprising: two sets of assembly units of offer, described groupPart unit includes first substrate and the second substrate that is in contact with the first substrate surface, wherein the class of the first substrateType is target or backboard, and the type of the second substrate is target or backboard, the type of the first substrate and second baseThe type of plate is different；A set of assembly unit is placed on another set of assembly unit, and makes described the of two sets of assembly unitsOne substrate abuts each other；Two sets of assembly units are placed in jacket；Using Hot Isostatic Pressing Diffusion technique to described twoFirst substrate and the second substrate in set assembly unit are diffused soldering, to form two sets of target material assemblies, and describedIn Diffusion Welding treatment process, the first substrate of two sets of assembly units is abutted each other；Two sets of target material assemblies are carried outCooling treatment, the cooling treatment carry out under pressurized environment；After carrying out cooling treatment to two sets of target material assemblies, institute is removedState jacket.
Since during cooling treatment, jacket is in hyperbaric environment, the deformation of two sets of target material assemblies by jacket outsideThe inhibition of hyperbaric environment.Specifically, two sets of target material assemblies have opposite deformation tendency, which makes tangible in jacketAt the trend in gap, and hyperbaric environment will inhibit the generation in the gap, thus reduce each set target material assembly first substrate andDeflection of the second substrate during cooling treatment, and then the good target material assembly of flatness can be formed, improve target material assemblyQuality.
To make the above purposes, features and advantages of the invention more obvious and understandable, with reference to the accompanying drawing to the present inventionSpecific embodiment be described in detail.
Fig. 2 to Fig. 8 is the corresponding structural schematic diagram of target material assembly manufacturing method that one embodiment of the invention provides.
It is the top view of single set assembly unit with reference to Fig. 2 and Fig. 3, Fig. 2；Fig. 3 is single set assembly unit shown in Fig. 2 along AAThe schematic diagram of the section structure in direction, provides two sets of assembly units, and the assembly unit includes first substrate 10 and with described firstThe second substrate 20 that 10 surface of substrate is in contact, wherein the type of the first substrate 10 is target or backboard, second baseThe type of plate 20 is target or backboard, and the type of the first substrate 10 is different from the type of the second substrate 20.
In the present embodiment, the type of the first substrate 10 is target；The type of the second substrate 20 is backboard.
In the present embodiment, the thermal expansion coefficient of the first substrate 10 is less than the thermal expansion coefficient of the second substrate 20.
The material of the target is titanium, tantalum, tungsten, aluminium or copper；The material of the backboard is aluminium, copper, aluminium alloy or copper alloy.In the present embodiment, the material of the target is titanium, i.e., the material of the described first substrate 10 is titanium；The material of the backboard is copper,The material of the i.e. described the second substrate 20 is copper.The thermal expansion coefficient of titanium is less than the thermal expansion coefficient of copper, that is, meets first substrate 10Thermal expansion coefficient be less than the second substrate 20 thermal expansion coefficient.
In the present embodiment, the shape of the first substrate 10 is rectangular；The shape of the second substrate 20 is rectangular, middle partThere is the groove to match with the first substrate 10.It is subsequent that weld is diffused with the second substrate 20 to the first substrate 10Reason, the groove are conducive to increase the contact area of the first substrate 10 and the second substrate 20, improve the first substrate 10With the weld strength between the second substrate 20.
Face in the first substrate 10 far from the second substrate 20 is abutment face 11, the roughness of the abutment face 11Less than or equal to 0.8 μm.The roughness value of the abutment face 11 is small, i.e., described 11 surface of abutment face is smooth, subsequent to two sets of groupsFirst substrate and the second substrate in part unit are diffused soldering, can be avoided and send out between the abutment face 11 and contactantRaw atom spreads and welds together.
With reference to Fig. 4, a set of assembly unit is placed on another set of assembly unit, and makes the described of two sets of assembly unitsFirst substrate 10 abuts each other.
In the present embodiment, realize that the method that the first substrate 10 of two sets of assembly units abuts each other includes: to provideSpacer 30, the spacer 30 have opposite obverse and reverse；Wherein, 10 surface of first substrate of a set of assembly unit with30 front of spacer is in contact, and 10 surface of first substrate of another set of assembly unit connects with 30 reverse side of spacerTouching, so that the first substrate 10 of two sets of assembly units abuts each other.
The assembly unit that the material of the spacer 30 is mainly welded as needed is selected, to avoid spacer 30Diffusion Welding occurs with the two sides substrate being in contact in the welding process, in order to separation two after the completion of the manufacture of subsequent target material assemblyCover target material assembly.The material of the spacer 30 is copper, stainless steel, graphite paper or mica sheet.In the present embodiment, the spacer30 material is stainless steel.
The subsequent first substrate 10 in two sets of assembly units and the second substrate 20 are diffused soldering with shapeAt two sets of target material assemblies, on the one hand, the spacer 30 plays the role of that two sets of assembly units are isolated, to prevent two sets of componentsAtom diffusion occurs between the first substrate 10 of unit and welds together, therefore after subsequent Diffusion Welding, the target groupPart is easy to separate with 30 surface of spacer；On the other hand, the spacer 30 can transmit between two sets of assembly unitsInteraction force.
The positive and negative surface roughness of the spacer 30 is lower, i.e. 30 front and back sides of spacer are more smooth, at subsequent Diffusion WeldingIt manages in step, atom diffusion is more difficult to happen between the spacer 30 and the abutment face 11 of first substrate 10.In the present embodiment,The positive roughness of the spacer 30 is less than or equal to 0.8 μm；The roughness of 30 reverse side of spacer is less than or equal to 0.8μm。
The spacer 30 is excessively thin, in subsequent Diffusion Welding processing step, due to the first substrate of two sets of assembly units10 extruding, the spacer 30 are easily broken；The spacer 30 is blocked up, influences the first substrate 10 to two sets of assembly unitsThe conduction of mutual active force is unfavorable for controlling the deformation of two sets of assembly units.In the present embodiment, the thickness of the spacer 30Degree is 0.1~3mm.
With reference to Fig. 5, in other embodiments, realize what the first substrate 10 of two sets of assembly units abutted each otherMethod may also include that be contacted with each other by 10 surface of the first substrate of two sets of assembly units, so that two sets of groupsThe first substrate 10 of part unit abuts each other.It is not present between the abutment face 11 of the first substrate 10 of i.e. two sets assembly unitsSpacer 30, but be directly in contact.
If the abutment face 11 of the first substrate 10 of two sets of assembly units is directly in contact, due to the first of two sets of assembly units10 material of substrate is identical, and 11 surface roughness of the abutment face is less than or equal to 0.8 μm, therefore in the processing of subsequent Diffusion WeldingIn the process, it is less likely to occur atom diffusion between the abutment face 11 of the first substrate 10 of two sets of assembly units, to can avoid twoSet assembly unit welds together.
With reference to Fig. 6, two sets of assembly units are placed in jacket 40, and the jacket 40 is de-gassed.
Two sets of assembly units are placed in jacket 40, on the one hand, two sets of assembly units can be prevented subsequentIt is contaminated or is oxidized in Diffusion Welding treatment process；On the other hand, subsequent Diffusion Welding processing carries out in hyperbaric environment,By the plastic deformation of the jacket 40 come conducting pressure, it can be avoided two sets of assembly units due to bearing pressure everywhere notIt is uniform and chipping.
The jacket 40 need to have good compressive property, and otherwise the jacket 40 is in subsequent Diffusion Welding treatment processIt is easily broken.In the present embodiment, the material of the jacket 40 is metal.
If the jacket 40 is too thin, it is easily broken in subsequent Diffusion Welding step；If the jacket 40 is too thick, subsequentPressure conduction is not easily accomplished in diffusion welding process.In the present embodiment, the jacket 40 with a thickness of 2~3mm.
In the present embodiment, the jacket 40 is in cubic, and be bonded with two sets of assembly unit surfaces closely, withThe air content in the jacket 40 is reduced, to reduce the difficulty being de-gassed to the jacket 40.
After two sets of assembly units are placed in jacket 40, the jacket 40 is sealed using welding procedure,There are degassing mouth (not shown)s on the jacket 40, for drawing deaeration pipe from the jacket 40, the deaeration pipe withVacuum equipment connection, to be de-gassed to the jacket 40.
The jacket 40 is de-gassed, in subsequent Diffusion Welding step, the gas that can be avoided in air is miscellaneousThe quality for the target material assembly that confrontation is formed causes adverse effect.If the vacuum degree in the jacket 40 is too low, two sets of componentsUnit is easy to be easily polluted by the external foreign matters in subsequent diffusion welding process；If the vacuum degree in the jacket 40 is excessively high, implementation cost is bigAnd the operating time is long, thus the vacuum degree meets the requirement of subsequent Diffusion Welding.In the present embodiment, to the jacket 40After being de-gassed, the vacuum degree in the jacket 40 is 10-1~10-4Pa。
During the degassing process, the jacket 40 is heated, to promote two sets of assembly unit surfacesThe decomposition and evaporation of impurity.If the temperature of the degassing process is too low, the decomposition of the impurity and evaporation process are slow；If describedThe temperature of degassing process is excessively high, is easily reduced the first substrate 10 and 20 mechanical performance of the second substrate.It is described in the present embodimentThe temperature of degassing process is 100~500 DEG C；Time is 1~5h.
With reference to Fig. 7 and Fig. 8, the jacket 40 is put into hot isostatic press (not shown), is spread using hot isostatic pressingWelding procedure is diffused soldering with the second substrate 20 to the first substrate 10 in two sets of assembly units, to form twoTarget material assembly 50 is covered, and in the Diffusion Welding treatment process, the first substrate 10 of two sets of assembly units is abutted each other.
The Diffusion Welding processing includes heating pressurized treatments.
Straight arrows in Fig. 7 represent each pressure to equalization that hot isostatic press in heating press processes generates；Curve arrow represents the heat of hot isostatic press generation.
The temperature of the heating pressurized treatments is higher, and single first substrate 10 for covering the assembly unit connects with the second substrate 20Diffusion coefficient between contacting surface is bigger, and first substrate 10 and the second substrate 20 reach pressure and duration needed for being in close contactIt is shorter.But if the temperature of the heating pressurized treatments is excessively high, it be easy to cause the hard of the first substrate 10 and the second substrate 20Change or soften, influences the mechanical performance of first substrate 10 Yu the second substrate 20.In the present embodiment, the temperature of the heating pressurized treatmentsDegree is 300~800 DEG C, and pressure is 100~200MPa, and duration is 2~5h.
In the Diffusion Welding after treatment, cooling treatment is carried out to the jacket 40, i.e., to two sets of target groupsPart 50 carries out cooling treatment, and the cooling treatment carries out under pressurized environment.
In the present embodiment, the jacket 40 is cooled to room temperature.
In the present embodiment, during the cooling treatment, when the temperature of two sets of target material assemblies is greater than or equal to 100DEG C when, 40 external pressure of jacket is powerful in 50MPa.
Since during cooling treatment, jacket 40 is in hyperbaric environment, and the deformation of two sets of target material assemblies 50 is wrappedCover the inhibition of 40 outer hyperbaric environments.Specifically, two sets of target material assemblies 50 have opposite deformation tendency, which to wrapThere is interstitial trend in set 40, and hyperbaric environment will inhibit the generation in the gap, and then can inhibit target material assembly 50Deformation.
In addition, thermal expansion coefficient of the thermal expansion coefficient of the first substrate 10 less than the second substrate 20, thusDuring the cooling treatment, single first substrate 10 for covering target material assembly 50 is described with being directed toward along the second substrate 20The trend of 10 direction of first substrate protrusion.The first substrate 10 of two sets of target material assemblies abuts each other, single to cover target groupPart 50 is not only by from internal stress, but also the active force from another set of target material assembly being subject to, and the active force and instituteThe contrary and equal in magnitude of stress is stated, thus the deformation of single set target material assembly 50 is controlled.Between two sets of target material assembliesMutually limitation, can reduce the deflection of each set target material assembly, so that obtaining has the good target material assembly of flatness.
With reference to Fig. 8, after the jacket 40 (referring to Fig. 7) is cooled to room temperature, by the jacket 40 from hot isostatic pressIt takes out, removes the jacket 40, take out two sets of target material assemblies 50.
Since during cooling treatment, the deformation of two sets of target material assemblies 50 is inhibited by the outer hyperbaric environment of jacket 40,The first substrate 10 of two sets of target material assemblies 50 because obtained from and the deflection of the second substrate 20 are small, i.e. two sets of target material assemblies 50Flatness is good.
Fig. 9 to Figure 13 is the corresponding structural schematic diagram of another embodiment of target material assembly manufacturing method of the present invention.
With reference to Fig. 9, provide two sets of assembly units, the assembly unit include first substrate 60 and with the first substrate 60The second substrate 70 that surface is in contact, wherein the type of the first substrate 60 be target or backboard, the second substrate 70Type is target or backboard, and the type of the first substrate 60 is different from the type of the second substrate 70.
In the present embodiment, the type of the first substrate 60 is backboard；The type of the second substrate 70 is target.
In the present embodiment, the thermal expansion coefficient of the first substrate 60 is less than the thermal expansion coefficient of the second substrate 70.
In the present embodiment, the material of the backboard is copper, i.e., the material of the described first substrate 60 is copper；The material of the targetMaterial is aluminium, i.e., the material of the described the second substrate 70 is aluminium.The thermal expansion coefficient of copper is less than the thermal expansion coefficient of aluminium, that is, meets firstThe thermal expansion coefficient of substrate 60 is less than the thermal expansion coefficient of the second substrate 70.
In the present embodiment, the shape of the second substrate 70 is rectangular；The shape of the first substrate 60 is rectangular, middle partThere is the groove to match with the second substrate 70.It is subsequent that weld is diffused with the second substrate 70 to the first substrate 60Reason, the groove are conducive to increase the contact area of the first substrate 60 and the second substrate 70, improve the first substrate 60With the weld strength between the second substrate 70.
Face in the first substrate 60 far from the second substrate 70 is abutment face 61, the roughness of the abutment face 61Less than or equal to 0.8 μm.The roughness value of the abutment face 61 is small, i.e., described 61 surface of abutment face is smooth, subsequent to two sets of groupsFirst substrate 60 and the second substrate 70 in part unit are diffused soldering, can be avoided the abutment face 61 and contactantBetween occur atom diffusion and weld together.
With reference to Figure 10, a set of assembly unit is placed on another set of assembly unit, and makes the institute of two sets of assembly unitsFirst substrate 60 is stated to abut each other.
In the present embodiment, realize that the method that the first substrate 60 of two sets of assembly units abuts each other includes: to provideSpacer 80, the spacer 80 have opposite obverse and reverse；Wherein, 60 surface of first substrate of a set of assembly unit with80 front of spacer is in contact, and 60 surface of first substrate of another set of assembly unit connects with 80 reverse side of spacerTouching, so that the first substrate 60 of two sets of assembly units abuts each other.
The assembly unit that the material of the spacer 80 is mainly welded as needed is selected, to avoid spacer 80Diffusion Welding occurs with the two sides substrate being in contact in the welding process, in order to separation two after the completion of the manufacture of subsequent target material assemblyCover target material assembly.The material of the spacer 80 is copper, stainless steel, graphite paper or mica sheet.In the present embodiment, the spacer80 material is stainless steel.
With reference to Figure 11, in other embodiments, realize that the first substrate 60 of two sets of assembly units abuts each otherMethod may also include that and contacted with each other by 60 surface of the first substrate of two sets of assembly units so that described two setsThe first substrate 60 of assembly unit abuts each other.It is not deposited between the abutment face 61 of the first substrate 60 of i.e. two sets assembly unitsIn spacer, but directly it is in contact.
With reference to Figure 12, two sets of assembly units are placed in jacket 90, and the jacket 90 is de-gassed.
Two sets of assembly units are placed in jacket 90, on the one hand, two sets of assembly units can be prevented subsequentIt is contaminated or is oxidized in Diffusion Welding treatment process；On the other hand, subsequent Diffusion Welding processing carries out in hyperbaric environment,By the plastic deformation of the jacket 90 come conducting pressure, it can be avoided two sets of assembly units due to bearing pressure everywhere notIt is uniform and chipping.
With reference to Figure 13, using Hot Isostatic Pressing Diffusion technique to the first substrate 60 and in two sets of assembly unitsTwo substrates 70 are diffused soldering, to form two sets of target material assemblies, and in the Diffusion Welding treatment process, two sets of groupsThe first substrate 60 of part unit abuts each other.
The Diffusion Welding processing includes heating pressurized treatments.
In the Diffusion Welding after treatment, cooling treatment is carried out to the jacket 90, i.e., to two sets of target groupsPart carries out cooling treatment, and the cooling treatment carries out under pressurized environment.
In the present embodiment, the jacket 90 is cooled to room temperature.
In the present embodiment, during the cooling treatment, when the temperature of two sets of target material assemblies is greater than or equal to 100DEG C when, 90 external pressure of jacket is powerful in 50MPa.
Since during cooling treatment, jacket 90 is in hyperbaric environment, and the deformation of two sets of target material assemblies is by jacketThe inhibition of 90 outer hyperbaric environments improves the quality of target material assembly so as to form the good target material assembly of flatness.
In addition, thermal expansion coefficient of the thermal expansion coefficient of the first substrate 60 less than the second substrate 70, thusDuring the cooling treatment, single first substrate 60 for covering target material assembly, which has, is directed toward described the along the second substrate 70The trend of one substrate, 60 direction protrusion.The first substrate 60 of two sets of target material assemblies abuts each other, single to cover target material assemblyNot only by the stress from inside, but also the active force from another set of target material assembly being subject to, and the active force is answered with describedPower it is contrary and equal in magnitude, thus the deformation of single set target material assembly is controlled.It is mutually limited between two sets of target material assembliesSystem, can reduce the deflection of each set target material assembly, so that obtaining has the good target material assembly of flatness.
After the cooling treatment, the jacket 90 is removed, takes out two sets of target material assemblies.
To sum up, cooling treatment is carried out to two sets of target material assemblies, the cooling treatment carries out under pressurized environment；Due toDuring cooling treatment, jacket is in hyperbaric environment, suppression of the deformation of two sets of target material assemblies by hyperbaric environment outside jacketSystem.Specifically, two sets of target material assemblies have an opposite deformation tendency, the deformation tendency to have in jacket it is interstitial becomeGesture, and hyperbaric environment will inhibit the generation in the gap, and then it is good to form flatness to can inhibit the deformation of target material assemblyTarget material assembly, improve the quality of target material assembly.
Although present disclosure is as above, present invention is not limited to this.Anyone skilled in the art are not departing from thisIt in the spirit and scope of invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim instituteSubject to the range of restriction.