CN109656056B - Reflective display panel and reflective display device - Google Patents

Abstract

The invention discloses a reflection type display panel and a reflection type display apparatus, comprising: the first substrate comprises a reflecting layer, incident light enters from the second substrate and is reflected on the reflecting layer to form reflected light, and the reflected light is emitted from the second substrate; the first substrate comprises a phase change material layer, and the phase change material layer is positioned on one side of the reflecting layer close to the second substrate; the second substrate comprises a plurality of thin film transistors, a plurality of data lines and a black matrix, the second substrate comprises a second substrate, the black matrix is located on one side, close to the first substrate, of the second substrate, and the data lines are located on one side, close to the first substrate, of the black matrix. In the reflection-type display panel provided by the invention, the data line is arranged on one side of the black matrix close to the first substrate, and external incident light cannot reach the position of the data line, so that the reflection of the data line to the incident light is reduced, the display quality of the display panel is improved, and the display quality of the display panel is improved.

Description

Reflective display panel and reflective display device

Technical Field

The present invention relates to the field of display technologies, and more particularly, to a reflective display panel and a reflective display apparatus.

Background

In the prior art, a reflective display device includes an array substrate, where metal traces such as a thin film transistor array and a data line are disposed on the array substrate, and the array substrate is located on a side where light is incident, that is, the array substrate is located on a side where a user views a display panel. By adopting the design mode, because the metal wires such as the thin film transistor array and the data lines have the function of reflecting light, after external light enters the display device, the positions of the metal wires such as the thin film transistor array and the data lines on the array substrate are reflected, so that the display effect of the display device is influenced.

Disclosure of Invention

In view of the above, the present invention provides a reflective display panel, comprising: the first substrate comprises a reflecting layer, incident light enters from the second substrate and is reflected on the reflecting layer to form reflected light, and the reflected light is emitted from the second substrate; the first substrate comprises a phase change material layer, and the phase change material layer is positioned on one side of the reflecting layer close to the second substrate; the second substrate comprises a plurality of thin film transistors, a plurality of data lines and a black matrix, the second substrate comprises a second substrate, the black matrix is located on one side, close to the first substrate, of the second substrate, and the data lines are located on one side, close to the first substrate, of the black matrix.

The invention also provides a reflection type display device, which comprises the reflection type display panel provided by the invention.

Compared with the prior art, the reflection type display panel and the reflection type display device provided by the invention at least realize the following beneficial effects:

in the reflection-type display panel provided by the invention, the data line is arranged on one side of the black matrix close to the first substrate, and external incident light cannot reach the position of the data line, so that the data line cannot reflect the incident light.

Of course, it is not necessary for any product in which the present invention is practiced to specifically achieve all of the above-described technical effects simultaneously.

Other features of the present invention and advantages thereof will become apparent from the following detailed description of exemplary embodiments thereof, which proceeds with reference to the accompanying drawings.

Drawings

The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description, serve to explain the principles of the invention.

Fig. 1 is a schematic cross-sectional view illustrating a reflective display panel according to an embodiment of the present invention;

fig. 2 is a schematic cross-sectional view of another reflective display panel according to an embodiment of the invention;

FIG. 3 is a schematic cross-sectional view of another reflective display panel according to an embodiment of the present invention;

FIG. 4 is a schematic cross-sectional view of another reflective display panel according to an embodiment of the present invention;

FIG. 5 is a schematic cross-sectional view of another reflective display panel according to an embodiment of the present invention;

FIG. 6 is a schematic cross-sectional view of another reflective display panel according to an embodiment of the present invention;

fig. 7 is a schematic cross-sectional view illustrating another reflective display panel according to an embodiment of the present invention;

FIG. 8 is a schematic cross-sectional view of another reflective display panel according to an embodiment of the present invention;

fig. 9 is a schematic cross-sectional view illustrating a reflective display panel according to an embodiment of the invention;

FIG. 10 is a schematic diagram of an optical path of a display panel in an unpowered state according to an embodiment of the present invention;

FIG. 11 is a schematic diagram of an optical path of a display panel in a power-on state according to an embodiment of the present invention;

fig. 12 is a schematic plan view of a reflective display apparatus according to an embodiment of the present invention.

Detailed Description

Various exemplary embodiments of the present invention will now be described in detail with reference to the accompanying drawings. It should be noted that: the relative arrangement of the components and steps, the numerical expressions and numerical values set forth in these embodiments do not limit the scope of the present invention unless specifically stated otherwise.

The following description of at least one exemplary embodiment is merely illustrative in nature and is in no way intended to limit the invention, its application, or uses.

Techniques, methods, and apparatus known to those of ordinary skill in the relevant art may not be discussed in detail but are intended to be part of the specification where appropriate.

In all examples shown and discussed herein, any particular value should be construed as merely illustrative, and not limiting. Thus, other examples of the exemplary embodiments may have different values.

It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, further discussion thereof is not required in subsequent figures.

Referring to fig. 1, fig. 1 is a schematic cross-sectional structure diagram of a reflective display panel according to an embodiment of the invention. As shown in fig. 1, an embodiment of the present invention provides a reflective display panel, including: the display device comprises afirst substrate 1 and asecond substrate 2 which are oppositely arranged, wherein thefirst substrate 1 comprises a reflectinglayer 11, incident light L enters from thesecond substrate 2 and is reflected on the reflectinglayer 11 to form reflected light, and the reflected light is emitted from thesecond substrate 2; thefirst substrate 1 comprises a phasechange material layer 12, and the phasechange material layer 12 is positioned on one side of the reflectinglayer 11 close to thesecond substrate 2; thesecond substrate 2 includes a plurality of thin film transistors T, a plurality ofdata lines 22 and ablack matrix 21, thesecond substrate 2 includes asecond base 20, theblack matrix 21 is located on a side of thesecond base 20 close to thefirst substrate 1, and thedata lines 22 are located on a side of theblack matrix 21 close to thefirst substrate 1. Optionally, thefirst substrate 1 further includes afirst base 10.

Specifically, as shown in fig. 1, the display panel includes afirst substrate 1 and asecond substrate 2, thesecond substrate 2 is located on a side where a user views the display panel, and external light L enters from thesecond substrate 2, is reflected by areflective layer 11 of thefirst substrate 1, and exits through thesecond substrate 2 to be received by eyes of the user, thereby implementing a display function. Optionally, the phasechange material layer 12 is a thermal transition phase change material, that is, when the temperature changes, the phase change material is switched between crystallization and amorphization, when the phasechange material layer 12 is in a crystallization state, the display panel displays a first color, and when the phasechange material layer 12 is in an amorphization state, the display panel displays a second color, and the luminance of the first color is different from the luminance of the second color. A heating material (not shown) is disposed on a side of the phasechange material layer 12 close to thefirst substrate 10, and whether the heating material is heated or not is controlled by a thin film transistor array (not shown), so as to change a temperature of the phasechange material layer 12, so that the phasechange material layer 12 has a crystallization state and an amorphization state at different temperatures, and an operation principle of the phasechange material layer 12 will be described in detail below.

In the case that the phasechange material layer 12 is switched by controlling a heating material (not shown in the figure) through a thin film transistor (not shown in the figure), since one side of the phasechange material layer 12 close to thefirst substrate 1 includes the heating material and a thin film transistor array, that is, thefirst substrate 1 includes the thin film transistor array, the thin film transistor T for controlling the liquid crystal electric field is disposed on thesecond substrate 2, in this case, the thin film transistor T and the metal trace are included on thesecond substrate 2, and the reflective display panel provided by the prior art has a technical problem of reflecting light of the metal material.

In the display panel provided by the embodiment of the invention, when external light L enters from thesecond substrate 2, at least part of the light L is reflected by the opaque metal film layer on thesecond substrate 2, so that the display quality of the display panel is reduced. In order to reduce the reflection of the light L by the metal film layer on thesecond substrate 2 and improve the display quality of the display panel, thedata line 22 of the display panel provided by this embodiment is disposed on one side of theblack matrix 21 close to thefirst substrate 1, and when the external light L enters from thesecond substrate 2, the light L cannot reach the position of thedata line 22 under the action of theblack matrix 21, so that thedata line 22 cannot reflect the light L, that is, the metal film layer capable of reflecting the incident light L is reduced, and the display quality of the display panel is improved.

In the reflective display panel provided by this embodiment, the data line is disposed on one side of the black matrix close to the first substrate, and external incident light cannot reach the position of the data line, so that the data line does not reflect the incident light.

Alternatively, referring to fig. 2, fig. 2 is a schematic cross-sectional structure diagram of another reflective display panel according to an embodiment of the present invention. As shown in fig. 2, the display panel further includes a plurality ofpixel electrodes 23, thepixel electrodes 23 are electrically connected to the thin film transistors T, the thin film transistors T include an active layer AC on a side of thesecond substrate 20 close to thefirst substrate 1, and thepixel electrodes 23 and theblack matrices 21 are both on a side of the active layer AC close to thefirst substrate 1. Optionally, the thin film transistor T further includes a gate electrode G, a source electrode S, and a drain electrode D, the gate electrode G is located on one side of thesecond substrate 20 close to thefirst substrate 1, the active layer AC is located on one side of the gate electrode G close to thefirst substrate 1, the source electrode S and the drain electrode D are located on one side of theblack matrix 21 close to thefirst substrate 1, theblack matrix 21 includes a plurality of first hollow portions GK1, and the source electrode S and the drain electrode D are connected to the active layer AC through the firsthollow portions GK 1.

Specifically, as shown in fig. 2, the display panel provided in this embodiment includes a plurality ofpixel electrodes 23, and thepixel electrodes 23 are electrically connected to the thin film transistors T through the drain electrodes D. Theblack matrix 21 includes a plurality of first hollow portions GK1, and the source electrode S and the drain electrode D of the thin film transistor T are connected to the active layer AC through the firsthollow portions GK 1. The gate electrode G of the thin film transistor T is positioned at a side of the active layer AC close to thesecond substrate 20. Since theblack matrix 21 cannot be punched, when theblack matrix 21 is manufactured, no pattern of theblack matrix 21 is disposed at the position of the first hollow-out portion GK1, that is, theblack matrix 21 is hollow out at the position. The source electrode S and the drain electrode D of the thin film transistor T are both on the side of theblack matrix 21 close to thefirst substrate 1, so that when light is incident from thesecond substrate 2, the source electrode S and the drain electrode D are not reached, further reducing the possibility of reflecting light from the source electrode S and the drain electrode D.

Alternatively, theblack matrix 21 is made of a high-resistance material.

Optionally, the active layer AC is made of an amorphous silicon material. The amorphous silicon material is used as the active layer AC, the preparation process is mature, the preparation process is relatively simple, the yield is high, and the preparation cost of the thin film transistor T can be reduced.

In the reflective display panel provided by the embodiment, the thin film transistor adopts a bottom gate structure, and an active layer can be manufactured by using amorphous silicon, so that the manufacturing cost of the thin film transistor is reduced; in addition, the source electrode and the drain electrode of the thin film transistor are arranged on one side of the black matrix close to the first substrate, so that when external light enters through the second substrate, the light cannot reach the source electrode and the drain electrode, and therefore the light cannot be reflected through the source electrode and the drain electrode, reflection of the metal film layer to the light is further reduced, the display quality of the display panel is further improved, and the display quality of the display panel is improved.

Optionally, referring to fig. 3, fig. 3 is a schematic cross-sectional structure diagram of another reflective display panel according to an embodiment of the present invention. As shown in fig. 3, the source S and the drain D of the thin film transistor T may also be located on a side of theblack matrix 21 close to thesecond substrate 20, theblack matrix 21 includes a third hollow-out portion GK3, and thedata line 22 is electrically connected to the source S of the thin film transistor T through the third hollow-out portion GK 3. Since theblack matrix 21 cannot be subjected to the punching process, when theblack matrix 21 is manufactured, the pattern of theblack matrix 21 is not provided at the position of the third hollow-outportion GK 2.

In the reflective display panel provided by this embodiment, the black matrix is provided with the third hollow portion, and the data line is electrically connected to the thin film transistor through the third hollow portion, so that the manufacturing process is simple, and the manufacturing efficiency of the display panel is improved.

Optionally, referring to fig. 4, fig. 4 is a schematic cross-sectional structure view of another reflective display panel according to an embodiment of the present invention. As shown in fig. 4, the thin film transistor T further includes a gate electrode G on a side of the active layer AC close to thefirst substrate 10, a source electrode S and a drain electrode D on a side of theblack matrix 21 close to thefirst substrate 1, theblack matrix 21 including a plurality of second hollow portions GK2, the source electrode S and the drain electrode D being connected to the active layer through the secondhollow portions GK 2.

Specifically, as shown in fig. 4, the display panel provided in this embodiment includes a plurality ofpixel electrodes 23, and thepixel electrodes 23 are electrically connected to the thin film transistors T through the drain electrodes D. Theblack matrix 21 includes a plurality of second hollow portions GK2, and the source electrode S and the drain electrode D of the thin film transistor T are connected to the active layer AC through the secondhollow portions GK 2. The gate electrode G of the thin film transistor T is positioned at a side of the active layer AC close to thefirst substrate 1. Since theblack matrix 21 cannot be subjected to the punching process, when theblack matrix 21 is manufactured, the pattern of theblack matrix 21 is not provided at the position of the second hollow-outportion GK 2. The source electrode S and the drain electrode D of the thin film transistor T are both on the side of theblack matrix 21 close to thefirst substrate 1, so that when light is incident from thesecond substrate 2, the source electrode S and the drain electrode D are not reached, further reducing the possibility of reflecting light from the source electrode S and the drain electrode D.

Optionally, the active layer AC is made of a polysilicon material. The polycrystalline silicon material is adopted as the active layer AC, so that the active layer AC has the advantages of higher integration level, higher mobility, smaller size and the like, and the gate G of the thin film transistor T can be positioned on one side of the active layer AC, which is far away from thefirst substrate 1, when the active layer AC is made of the polycrystalline silicon material; the gate electrode G of the thin film transistor T may also be positioned at a side of the active layer AC close to thefirst substrate 1. In fig. 4, only the gate electrode G is illustrated on the side of the active layer AC close to thefirst substrate 1.

In the reflective display panel provided by the embodiment, the source electrode and the drain electrode of the thin film transistor are both arranged on one side of the black matrix close to the first substrate, so that when external light enters through the second substrate, the light cannot reach the source electrode and the drain electrode, and therefore the light cannot be reflected through the source electrode and the drain electrode, reflection of the metal film layer to the light is further reduced, the display quality of the display panel is further improved, and the display quality of the display panel is improved.

Optionally, referring to fig. 5, fig. 5 is a schematic cross-sectional structure view of another reflective display panel according to an embodiment of the present invention. As shown in fig. 5, the source S and the drain D of the thin film transistor T may also be located on a side of theblack matrix 21 close to thesecond substrate 20, theblack matrix 21 includes a fourth hollow-out portion GK4, and thedata line 22 is electrically connected to the source S of the thin film transistor T through the fourth hollow-out portion GK 4. Since theblack matrix 21 cannot be subjected to the punching process, when theblack matrix 21 is manufactured, the pattern of theblack matrix 21 is not provided at the position of the fourth hollow-out portion GK 4.

In the reflective display panel provided by this embodiment, the black matrix is provided with the fourth hollow portion, and the data line is electrically connected to the thin film transistor through the fourth hollow portion, so that the manufacturing process is simple, and the manufacturing efficiency of the display panel is improved.

Alternatively, referring to fig. 6-7, fig. 6 is a schematic cross-sectional structure diagram of another reflective display panel according to an embodiment of the present invention, and fig. 7 is a schematic cross-sectional structure diagram of another reflective display panel according to an embodiment of the present invention. As shown in fig. 6, thesecond substrate 2 further includes a plurality ofcolor resistors 24, and thecolor resistors 24 are located between thepixel electrodes 23 and thesecond substrate 20; alternatively, as shown in fig. 7, thecolor resistor 24 is located on a side of thepixel electrode 23 facing away from thesecond substrate 20.

Specifically, as shown in fig. 6-7, the display panel may further include acolor resistor 24, and as shown in fig. 6, thecolor resistor 24 may be located on a side of thepixel electrode 23 close to thesecond substrate 20; or, as shown in fig. 7, thecolor resistor 24 may be located on a side of thepixel electrode 23 facing away from thesecond substrate 20. In the direction Z perpendicular to the display panel, thepixel electrode 23 and thecolor resistor 24 at least partially overlap, and thecolor resistor 24 and theblack matrix 21 do not overlap or only partially overlap.

Specifically, the color resists 24 may include a red color resist, a green color resist and a blue color resist, so that, when external light is incident on the display panel and passes through the color resists, red incident light, green incident light and blue incident light can be obtained, respectively.

In the reflective display panel provided by this embodiment, the display panel further includes a color resistor, which can increase the number of basic colors of pixels in the display panel, so that the display panel can display more colors, thereby improving the display quality of the display panel and improving the display quality of the display panel.

Optionally, referring to fig. 8, fig. 8 is a schematic cross-sectional structure view of another reflective display panel according to an embodiment of the present invention. As shown in fig. 8, thesecond substrate 2 further includes an insulatinglayer 25, and the insulatinglayer 25 is located on one side of theblack matrix 21 close to thefirst substrate 1; the display panel further includes a plurality ofgate lines 26, the gate lines 26 are disposed on a side of theblack matrix 21 adjacent to thefirst substrate 1, the data lines 22 are disposed on a side of the insulatinglayer 25 adjacent to thefirst substrate 1, and the gate lines 26 are disposed between the insulatinglayer 25 and theblack matrix 21.

Specifically, as shown in fig. 8, thesecond substrate 2 includes an insulatinglayer 25, the insulatinglayer 25 is located on one side of theblack matrix 21 close to thefirst substrate 1, and theblack matrix 21, thegate line 26, the insulatinglayer 26 and thedata line 22 are sequentially disposed along a direction Z perpendicular to the display panel. Thegate line 26 is located on a side of theblack matrix 21 away from thesecond substrate 20, so that when external light is incident from thesecond substrate 2, the light cannot reach a position where thegate line 26 is located, and thegate line 26 cannot reflect the light, that is, a metal film layer capable of reflecting the incident light is reduced, and the display quality of the display panel is improved. In addition, when the gate electrode G is positioned at a side of the active layer AC close to thesecond substrate 20, a depth of a via hole positioned between thegate line 26 and the gate electrode G is reduced compared to when thegate line 26 is positioned at a side of thedata line 22 away from theblack matrix 21.

Optionally, theblack matrix 21 is made of an organic high-resistance material, so that the subsequent high-temperature process can be prevented from affecting the black matrix.

Alternatively, the material of the insulatinglayer 25 includes an organic material or silicon nitride. Since the inorganic material usually needs to be formed by a high temperature chemical deposition process, and after theblack matrix 21 is formed, the high temperature process may affect the performance of theblack matrix 21 and even damage theblack matrix 21, the insulatinglayer 25 is formed by a process that does not require high temperature, such as coating an organic material or depositing silicon nitride at a low temperature. Optionally, the insulatinglayer 25 and theblack matrix 21 are made of high-resistance materials.

In the reflection-type display panel that this embodiment provided, gate line and data line all are located the one side that the black matrix is close to first base plate, therefore incident light can't reach gate line and data line, and gate line and data line can not the reflected light promptly, have further reduced the metal film layer that can the reflected light, have further improved display panel's display quality, have promoted display panel's display quality.

Optionally, referring to fig. 9, fig. 9 is a schematic cross-sectional structure view of another reflective display panel according to an embodiment of the present invention. As shown in fig. 9, thefirst substrate 1 includes a phasechange material layer 12, and the phasechange material layer 12 is located on a side of thereflective layer 11 close to thesecond substrate 2. Optionally, the display panel includes a guest-hostliquid crystal layer 32 and a quarter-wave plate 31, the guest-hostliquid crystal layer 32 is located between thefirst substrate 1 and thesecond substrate 2, and the quarter-wave plate 31 is located on a side of the guest-hostliquid crystal layer 32 close to thefirst substrate 1.

Specifically, as shown in fig. 9, the display panel includes the phasechange material layer 12, the quarter-wave plate 31, and the guest-host liquid crystal 32, which are sequentially disposed in a direction Z perpendicular to the display panel. Optionally, thefirst substrate 1 further includes: the thin film transistor J and theheater 15 which are positioned on thesubstrate base plate 10 control whether theelectric heating material 15 is heated or not through the conduction of the thin film transistor J; and aresonant cavity 16 located above thereflective layer 11. Optionally, theresonant cavity 16 is an optical resonant cavity, and includes two mirrors arranged in parallel, refractive indexes of the two mirrors are different, and the light wave is reflected back and forth between the two mirrors with different refractive indexes of the optical resonant cavity, so that the wavelength of the light reflected from the resonant cavity is controlled by controlling the thickness of the optical resonant cavity, and the resonant cavity reflects a specific wavelength. That is, theresonant cavity 16 controls the reflection of light of a specific wavelength and reflects light of a specific wavelength. When the phasechange material layer 12 is in a crystallized state, the color of the reflected bright color is changed by changing the thickness of the resonant cavity. The phase-change material layer 12 has a crystallized state and an amorphized state, when the phase-change material layer 12 is in the crystallized state, the display panel displays a first color, and when the phase-change material layer 12 is in the amorphized state, the display panel displays a second color, and the brightness of the first color is different from the brightness of the second color. That is, the phasechange material layer 12, theheater 15, thereflective layer 11, and theresonant cavity 16 can increase the color number of the display panel.

It should be noted that the phase-change material layer 12 in the embodiment of the present invention is a thermal transition phase-change material, that is, the phase-change material is switched between crystallization and amorphization when the temperature changes. The temperature of the phasechange material layer 12 is changed by the presence or absence of heating by theheater 15, so that the phasechange material layer 12 has a crystallized state and an amorphized state at different temperatures.

The guest-host liquid crystal layer is: dichroic dyes having different absorption of visible light in the major axis direction and the minor axis direction are dissolved as guest in an aligned liquid crystal host. The dichroic dye will align with the liquid crystal molecules in a "guest-host" fashion. When the alignment of the liquid crystal molecules as a host is changed by an electric field, the alignment direction of the molecules of the dichroic dye is changed accordingly, i.e., the absorption of incident light by the dichroic dye is also changed. That is, when theliquid crystal layer 32 is not energized, the dye is horizontally aligned (parallel to the display panel) with the liquid crystal molecules, and the dye absorbs light strongly, so that the display panel is in a dark state; when theliquid crystal layer 32 is energized, the dye is vertically aligned with the liquid crystal molecules, and the absorption of light by the dye is greatly reduced, so that the display panel is in a bright state.

The working principle of the display panel is explained as follows:

referring to fig. 10-11, fig. 10 is a schematic diagram of an optical path of a display panel in a non-powered state according to an embodiment of the present invention, and fig. 11 is a schematic diagram of an optical path of a display panel in a powered state according to an embodiment of the present invention. As shown in fig. 10, when the display panel does not apply an electric field to theliquid crystal layer 32, when external light L is incident from thesecond substrate 2, the light L passes through theliquid crystal layer 32, most of the light L with the vibration direction parallel to the liquid crystal molecules is absorbed by the dye, and the light L with the vibration direction perpendicular to the liquid crystal molecules can pass through theliquid crystal layer 32, that is, the light L comprises two parts after passing through the liquid crystal layer 32: a light L1 (labeled for convenience of explanation and not shown in the figure) with a very small vibration direction parallel to the liquid crystal molecules and a light L2 with a vibration direction perpendicular to the liquid crystal molecules are changed into elliptically polarized light or circularly polarized light with different vibration directions through the quarter-wave plate 31, and the elliptically polarized light (or circularly polarized light) reaches thereflective layer 11 and is reflected to the phasechange material layer 12, and at this time, the elliptically polarized light (or circularly polarized light) is still reflected, but the direction is opposite to the direction of the elliptically polarized light (or circularly polarized light) which is incident before. When the reflected elliptically polarized light (or circularly polarized light) reaches the quarter-wave plate 31, the light L1 becomes the light L11 with the vibration direction perpendicular to the liquid crystal molecules, the light L2 becomes the light L22 with the vibration direction parallel to the liquid crystal molecules, when the two parts of light reach the liquid crystal layer 32, the light L11 can be emitted from the display panel, most of the light L22 can be absorbed by the dye of the liquid crystal layer 32, and because the amount of the light L11 is very small, the amount of the light L22 is very large, namely most of the light is absorbed and only a small part of the light is emitted from the display panel, so that the whole display panel presents a dark state; as shown in fig. 11, when the display panel is powered on, since the dye and the liquid crystal molecules become vertical alignment, the absorption capacity of the dye of the liquid crystal layer 32 to light is greatly reduced, when the external light L is incident from the second substrate 2, the light L passes through the liquid crystal layer 32, since the absorption of the dye of the liquid crystal layer 32 to the reflected linearly polarized light is greatly reduced, the amount of light L that can pass through the liquid crystal layer 32 is greatly increased, that is, the light L also includes two parts after passing through the liquid crystal layer 32: most of the light L3 (labeled for convenience of explanation and not shown) with the vibration direction parallel to the liquid crystal molecules and the light L4 with the vibration direction perpendicular to the liquid crystal molecules, which will become elliptically polarized light or circularly polarized light with different vibration directions through the quarter-wave plate 31, the elliptically polarized light (or circularly polarized light) reaches the reflective layer 11 and is reflected to the phase change material layer 12, at this time, the elliptically polarized light (or circularly polarized light) is still reflected, but the direction is opposite to the direction of the elliptically polarized light (or circularly polarized light) incident before, when the elliptically polarized light (or circularly polarized light) reaches the quarter-wave plate 31, the light L3 becomes the light L33 with the vibration direction perpendicular to the liquid crystal molecules, the light L4 becomes the light L44 with the vibration direction parallel to the liquid crystal molecules, and when the two portions of the light reach the, the light L33 exits from the display panel, and since the absorption capacity of the dye of the liquid crystal layer 32 to the light is greatly reduced, most of the light L44 can pass through the liquid crystal layer 32, in this case, a small part of the light L44 is absorbed by the dye, and most of the light L44 and the light L33 exit from the display panel at the same time, so that the whole display panel displays normally. When theliquid crystal layer 32 absorbs light of different magnitudes, the brightness of the display panel is also different, i.e., theliquid crystal layer 32 can further increase the gray scale of the display panel.

In the reflective display panel provided by this embodiment, since the phase-change material layer can increase the number of colors of the display panel, and the guest-host liquid crystal can increase the gray scale of the display panel, the number of colors of the display panel can be significantly increased, the display quality of the display panel can be improved, and the display quality of the display panel can be improved.

Alternatively, with continued reference to fig. 9, thereflective layer 11 is multiplexed into the common electrode 14, and the common electrode 14 and thepixel electrode 23 are used together to form an electric field acting on theliquid crystal layer 32.

In the reflection-type display panel provided by the embodiment, the reflection layer is multiplexed into the common electrode, so that the reflection of incident light rays can be realized, the common electrode does not need to be additionally manufactured, the film layer structure of the display panel is reduced, the thickness of the display panel is reduced, and the quality of the display panel is improved.

The embodiment of the invention also provides a reflection type display device which comprises the reflection type display panel provided by the invention. Specifically, referring to fig. 12, fig. 12 is a schematic plan view illustrating a reflective display device according to an embodiment of the present invention. Fig. 12 provides adisplay device 1000 including adisplay panel 1000A according to any of the above embodiments of the present invention. The embodiment of fig. 12 is only an example of a watch, and thedisplay device 1000 is described, but it should be understood that the display device provided in the embodiment of the present invention may be other display devices having a display function, such as a mobile phone, a computer, a television, a vehicle-mounted display device, and the present invention is not limited thereto. The display device provided in the embodiment of the present invention has the beneficial effects of the display panel provided in the embodiment of the present invention, and specific reference may be made to the specific description of the display panel in each of the above embodiments, which is not repeated herein.

As can be seen from the above embodiments, the reflective display panel and the reflective display apparatus according to the present invention at least achieve the following advantages:

in the reflection-type display panel provided by the invention, the data line is arranged on one side of the black matrix close to the first substrate, and external incident light cannot reach the position of the data line, so that the data line cannot reflect the incident light.

Although some specific embodiments of the present invention have been described in detail by way of examples, it should be understood by those skilled in the art that the above examples are for illustrative purposes only and are not intended to limit the scope of the present invention. It will be appreciated by those skilled in the art that modifications may be made to the above embodiments without departing from the scope and spirit of the invention. The scope of the invention is defined by the appended claims.

Claims (8)

1. A reflective display panel, comprising:

the display panel comprises a first substrate and a second substrate which are oppositely arranged, wherein the first substrate comprises a reflecting layer, incident light enters from the second substrate and is reflected on the reflecting layer to form reflected light, and the reflected light exits from the second substrate;

the first substrate comprises a phase change material layer, and the phase change material layer is positioned on one side of the reflecting layer close to the second substrate;

the second substrate comprises a plurality of thin film transistors, a plurality of data lines and a black matrix, the second substrate comprises a second substrate, the black matrix is positioned on one side of the second substrate close to the first substrate, and the data lines are positioned on one side of the black matrix close to the first substrate;

the display panel further comprises a plurality of pixel electrodes, the pixel electrodes are electrically connected with the thin film transistors, the thin film transistors comprise active layers, the active layers are located on one sides, close to the first substrate, of the second substrates, and the pixel electrodes and the black matrixes are located on one sides, close to the first substrate, of the active layers.

2. Reflective display panel according to claim 1,

the thin film transistor further comprises a gate electrode, a source electrode and a drain electrode, the gate electrode is located on one side, close to the first substrate, of the second substrate, the active layer is located on one side, close to the first substrate, of the gate electrode, the source electrode and the drain electrode are located on one side, close to the first substrate, of the black matrix, the black matrix comprises a plurality of first hollow parts, and the source electrode and the drain electrode are connected to the active layer through the first hollow parts.

3. Reflective display panel according to claim 1,

the thin film transistor further comprises a gate electrode, a source electrode and a drain electrode, the gate electrode is located on one side, close to the first substrate, of the active layer, the source electrode and the drain electrode are located on one side, close to the first substrate, of the black matrix, the black matrix comprises a plurality of second hollow portions, and the source electrode and the drain electrode are connected to the active layer through the second hollow portions.

4. Reflective display panel according to claim 1,

the second substrate further comprises a plurality of color resistors, and the color resistors are positioned between the pixel electrodes and the second substrate;

or, the color resistor is positioned on one side of the pixel electrode, which is far away from the second substrate.

5. Reflective display panel according to claim 1,

the second substrate further comprises an insulating layer, and the insulating layer is positioned on one side, close to the first substrate, of the black matrix;

the display panel further comprises a plurality of gate lines, the gate lines are positioned on one side of the black matrix close to the first substrate, and the data lines are positioned on one side of the insulating layer close to the first substrate;

the gate line is positioned between the insulating layer and the black matrix.

6. Reflective display panel according to claim 1,

the display panel comprises a guest-host liquid crystal layer and a quarter-wave plate, the guest-host liquid crystal layer is located between the first substrate and the second substrate, and the quarter-wave plate is located on one side, close to the first substrate, of the guest-host liquid crystal layer.

7. Reflective display panel of claim 6,

the reflecting layer is multiplexed into a common electrode, and the common electrode and the pixel electrode are used for forming an electric field acting on the liquid crystal layer.

8. A reflective display apparatus comprising the reflective display panel according to any one of claims 1 to 7.

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