The three-dimensional active heat removal encapsulating structure and its manufacture craft of embedded fluid channelTechnical field
The present invention relates to a kind of three-dimension packaging structure, the three-dimensional active heat removal of especially a kind of embedded fluid channel encapsulates knotStructure and its manufacture craft belong to the technical field of integrated antenna package.
Background technique
With the increase of the integrated level of hyundai electronics chip, the reduction of the rising of power consumption and size, the chip quicklyd increaseSystem heat generation has become a significant challenge in advanced electronic chip system research and development and application.Generally, the mistake of componentEfficiency is with the rising exponentially rule rising of device temperature, and device is every in 70~80 DEG C of levels to increase 1 DEG C, reliability dropLow 5%.Especially in three-dimension packaging system, heat management problems be can not be ignored, this is because: often collecting in (1) three-dimension packaging systemAt multiple chips, transistor size is more, and calorific value is larger, but whole package area does not increase therewith, therefore hasHigher heat generation density；(2) chip is encapsulated using 3-D stacks, is unfavorable for heat and is distributed, positioned at the core of laminated bottom and middle partPiece, distributing for heat will be more difficult；(3) for three-dimensional package assembly, copper conductor part is by insulating layer, chip, substrate etc.Structure is surrounded, and is distributed so that the heat of chip generation is more difficult.These factors cause the temperature of chip to increase sharply.
Conventional radiating mode mainly has heat transfer, convection current, micro- spray cooling, radiation and freezing by change of state etc., but these radiateThe corresponding equipment volume of mode and efficiency are all unsatisfactory.Especially when the power density of system is higher than 100W/cm2When, these heatManagement method can not be applicable at all.And fluid channel active heat removal technology is to be integrated in fluid channel inside chip or substrate, is utilizedThe heat that fluid working substance flowing generates when taking away chip operation, equivalent heat transfer factor will be far longer than some conventional thermal conductive materialsThe heat transfer coefficient of (aluminium, copper, silver etc.), it can be ensured that device works at a suitable temperature.So in order to meet three dimensional microelectronicSystem high-performance, the high growth requirement to radiate, need the three-dimensional active heat removal encapsulating structure for developing a kind of embedded fluid channel.
Summary of the invention
The purpose of the present invention is overcoming the shortcomings of that three-dimension packaging system radiating is horizontal in the prior art, provide a kind of embeddedThe three-dimensional active heat removal encapsulating structure and its manufacture craft of fluid channel, by being internally integrated fluid channel in chip back and substrateStructure realizes that three-dimension packaging system in the various dimensions of chip-scale and substrate grade, multiple dimensioned active heat removal, greatly promotes three-dimensional envelopeThe heat-sinking capability of dress system.
According to technical solution provided by the invention, the three-dimensional active heat removal encapsulating structure of the embedded fluid channel is specialSign is: including three-dimension packaging structure, being equipped with microchannel chip structural unit, the fluid channel in the three-dimension packaging structure top layerChip structure unit includes the IC chip and fluid channel cover board for being embedded in micro-channel structure, is equipped in the three-dimension packaging structure bottomTwo-dimentional Manufacturing resource structural unit, the two dimension Manufacturing resource structural unit includes TSV pinboard and IC chip, TSV pinboardIt is connected with IC chip by wiring layer again；The microchannel chip structural unit and two-dimentional Manufacturing resource structural unit pass through arraySalient point is connected with Underfill layer, finally encapsulates to form three-dimensional active heat removal encapsulation knot with insertion fluid channel substrate and package casingStructure, electric signal are drawn by exit outside the array of insertion fluid channel substrate surface.
Further, the microchannel chip structural unit is by directly making fluid channel knot in IC chip substrate backStructure is bonded with fluid channel cover board.
Further, the material of the fluid channel cover board uses silicon or glass.
Further, the material of the insertion fluid channel substrate is using ceramics or organic resin.
The manufacture craft of the three-dimensional active heat removal encapsulating structure of the embedded fluid channel, characterized in that including following stepIt is rapid:
(1) micro/nano-scale micro-channel structure is made in three-dimension packaging structure top-level functionality chip back, obtains insertion fluid channel knotThe IC chip of structure；By wafer scale bonding technology in the IC chip surface bond fluid channel cover board of insertion flow passage structure, seal micro-Microchannel chip structural unit is made in runner；
(2) TSV pinboard is made by routine TSV technique, TSV adapter plate structure and three-dimension packaging structure bottom IC chip is led toIt keeps wafer scale and is fanned out to packaging technology and carry out integrated, two dimension Manufacturing resource structural unit is made；In the two-dimentional isomery collectionThe signal interconnection for realizing TSV pinboard and IC chip by being routed again at structural unit upper and lower surface, is realized by array salient pointThe interconnection of three-dimension packaging architecture signals；
(3) insertion microchannel chip unit obtained above and two-dimentional Manufacturing resource structural unit is real by salient point interconnection processNow interconnection up and down, is made three-dimensionally integrated structure；Wherein, top layer unit includes micro-channel structure, and bottom floor units include TSV structure；
(4) finally by salient point interconnection process and conventional sealing cap technique, by the three-dimensionally integrated structure of above-mentioned gained and insertion fluid channelSubstrate and package casing are packaged, and the extraction of encapsulated circuit signal is realized by exit outside array, and the insertion is madeDecline the three-dimensional active heat removal encapsulating structure of runner.
Further, in the step (1), micro-channel structure is directly made in function by deep reaction ion etching techniqueThe chip substrate back side, realizes chip dimension active heat removal, and fluid channel cover board includes microfluid entrance through-hole structure.
The invention has the following advantages that
(1) other micro-channel structure is directly integrated in the functional chip back side to size in the micron-scale, introduces coolant for chip activeThe calorific value in area (especially hot spot region) is taken away, and the radiating mode of this " short distance " is a kind of direct, efficient chip-scaleActive heat removal mode eliminates interface resistance existing for traditional heat-dissipating mode；
(2) size is directly embedded in inside substrate in sub-micron or the other micro-channel structure of grade, introduces coolant for threeDimension package system bottom chip calorific value is taken away, and is a kind of direct, efficient substrate grade active heat removal mode, significantly reducesThe equivalent thermal resistance of package substrate realizes various dimensions, the multiple dimensioned heat management of three-dimension packaging system；
(3) the integrated three-dimensionally integrated function that functional chip may be implemented of TSV pinboard and functional chip, while TSVIt can be used as heat transfer pathway, play certain heat spreading function, promote three dimension system heat-sinking capability.
Detailed description of the invention
FIG. 1 to FIG. 7 is the Typical Process Case of the three-dimensional active heat removal encapsulating structure of embedded fluid channel of the present inventionFlow chart；Wherein:
Fig. 1 is the IC chip wafer schematic diagram that the back side is embedded in micro-channel structure.
Fig. 2 is the fluid channel cover board disk schematic diagram that production has microfluid entrance through-hole.
Fig. 3 is the microchannel chip structural unit schematic diagram under interception.
Fig. 4 is the two-dimentional Manufacturing resource structural unit schematic diagram that two-sided production has again wiring layer.
Fig. 5 is two-dimentional Manufacturing resource structural unit upper and lower surface production display salient point schematic diagram.
Fig. 6 is insertion microchannel chip unit and two-dimentional Manufacturing resource structural unit three-dimensional interconnection structure schematic diagram.
Fig. 7 is the three-dimensional active heat removal package structure diagram of embedded fluid channel of the present invention.
Description of symbols: 1- three-dimension packaging structure, 2- microchannel chip structural unit, 3- are embedded in the IC of micro-channel structureChip, 4- fluid channel cover board, 5- two dimension Manufacturing resource structural unit, 6- wiring layer, 7-TSV pinboard, 8-IC chip, 9- gusts againColumn salient point, 10- Underfill layer, 11- insertion fluid channel substrate, 12- package casing, the outer exit of 13- array.
Specific embodiment
Below with reference to specific attached drawing, the invention will be further described.
As shown in fig. 7, the three-dimensional active heat removal encapsulating structure of embedded fluid channel of the present invention, including three-dimension packaging knotStructure 1；It is equipped with microchannel chip structural unit 2 in 1 top layer of three-dimension packaging structure, in the microchannel chip structural unit 2IC chip 3 and fluid channel cover board 4 equipped with insertion micro-channel structure are equipped with two-dimentional isomery in 1 bottom of three-dimension packaging structureIntegrated morphology unit 5 is equipped with TSV pinboard 7 and IC chip 8,7 He of TSV pinboard in the two dimension Manufacturing resource structural unit 5IC chip 8 is connected by wiring layer 6 again；The microchannel chip structural unit 2 passes through battle array with two-dimentional Manufacturing resource structural unit 5Column salient point 9 and Underfill layer 10 connect, and finally form three-dimensional actively with insertion fluid channel substrate 11 and the encapsulation of package casing 12Heat-dissipation packaging structure, electric signal are drawn by exit 13 outside the array on 11 surface of insertion fluid channel substrate.
Preparation method of the present invention based on insertion fluid channel three-dimension packaging structure, comprising the following steps:
Step 1: providing the wafer of IC chip, and the IC chip wafer substrate material includes but is not limited to the materials such as silicon, GaAsMaterial meets the miniflow of design requirement in the backside of wafer using conventional deep reaction ion etching technique production pitch and depth-to-width ratioRoad structure obtains the IC chip 3 of insertion micro-channel structure, as shown in Figure 1；
Step 2: cover board disk is provided, the cover board disk material includes but is not limited to the materials such as silicon, glass, in the cover boardGone out on disk using the microfluid that conventional deep reaction ion etching technique or laser boring technique production diameter meet design requirementEntrance through-hole obtains fluid channel cover board 4, as shown in Figure 2；
Step 3: using wafer scale bonding technology by above-mentioned gained insertion micro-channel structure IC chip 3 and fluid channel cover board 4 intoRow assembling, intercepts to obtain the microchannel chip structural unit 2 of corresponding size by standard scribing process, as shown in Figure 3；
Step 4: being made TSV pinboard 7 using routine TSV technique, by above-mentioned gained TSV pinboard 7 and three-dimension packaging structure bottomLayer IC chip 8 is fanned out to packaging technology by wafer scale and carries out integrated, obtained two dimension Manufacturing resource structural unit 5, in instituteTwo-dimentional 5 upper and lower surface of Manufacturing resource structural unit is stated to pass through photoetching but be not limited to technique production wiring layer 6 again of photoetching, realizeTSV pinboard 7 is electrically connected with IC chip 8, as shown in Figure 4；
Step 5: using the conventional ball technique or electroplating technology of planting in above-mentioned 5 upper and lower surface of gained two dimension Manufacturing resource structural unitArray salient point 9 is made, as shown in Figure 5；The array convex point material includes but is not limited to copper, tin-lead, Xi Yin and tin silver copper etc.Material；
Step 6: realize that above-mentioned gained is embedded in microchannel chip unit 3 and two using salient point interconnection process and underfill processThe three-dimensional interconnection of Manufacturing resource structural unit 5 is tieed up, as shown in Figure 6；The salient point interconnection process includes but is not limited to Reflow Soldering, heatThe techniques such as pressure welding；
Step 7: using salient point interconnection process and conventional sealing cap technique, by the embedding of the three-dimensionally integrated structure of above-mentioned gained and customizationFlow channel substrate 11 and package casing 12 in a subtle way is packaged, and obtains the three-dimensional active heat removal encapsulating structure 1 of embedded fluid channel, is led toIt crosses conventional ball/plant column technique of planting and the outer exit 13 of array signal is made, as shown in Figure 7；The insertion fluid channel baseplate material packetThe materials such as ceramics, organic resin are included but are not limited to, the array salient point material includes but is not limited to tin-lead, Xi Yin and tin silver copper etc.Material.