CN109461380B - Flexible active color display module - Google Patents

Abstract

The invention discloses a flexible active color display module, which comprises: the flexible active matrix display control circuit substrate is used as a first layer; a second layer of the array of first primary light emitting devices; a third layer of an array of second primary color light emitting devices staggered from the array of first primary color light emitting devices; and a fourth layer of an array of light emitting devices of a third primary color staggered in position with the array of light emitting devices of the first primary color and the array of light emitting devices of the second primary color; the active matrix display control circuit controls and drives each light-emitting device through a metal rivet electrode array at the bottom of each primary light-emitting device and a transparent metal universal electrode at the top of each primary light-emitting device to form the flexible active color display module. Therefore, the flexible active color display module can be manufactured, can be used independently, can also be spliced to manufacture a flexible display screen, has the advantages of simple process and stable structure, and can realize the folding performance based on the flexible active matrix display control circuit substrate.

Description

Flexible active color display module

Technical Field

The invention relates to the field of color display, in particular to a flexible active color display module.

Background

With the development of technology, LED color display screens have various applications in a wide variety of products, such as backlights, mobile phones, portable devices, and ultra-large display screens. With continuous breakthrough and innovation of display technologies, the display field forms a situation of common development of various display technologies, and the display functions are rich and colorful. The display screen of the present day is different from the conventional display screen in terms of display color and restoration effect, and the form of the display screen itself. Flexible displays are popular in the current display field, which was hard to imagine earlier, and flexible display devices that can be bent freely like paper have appeared to the eye of people. In the field of LED display, a flexible LED display panel is generally understood to have a certain flexibility and can be bent to some extent. Based on the characteristic of LED display screen, the module of assembling of flexible LED screen all adopts soft material to make, and the connection of its module compares traditional module and has great difference, generally thinks that traditional module PCB board adopts the fine material of glass mostly, has stronger hard brittleness, can not zigzag. The module PCB board of flexible screen adopts the flexible soft board, and flexible module also is equipped with high strength's hasp and linkage on the concatenation, and face guard and drain pan all adopt rubber, have the resistance to compression and the antitorque ability of high strength. However, how to design flexible LED display structures still needs further improved technology.

Disclosure of Invention

The present invention provides a new flexible active color display module.

The technical scheme of the invention is as follows: a flexible active color display module, comprising:

the flexible active matrix display control circuit substrate is used as a first layer; and

a second layer of the array of first primary light emitting devices; and

a third layer of an array of second primary color light emitting devices staggered from the array of first primary color light emitting devices; and

a fourth layer of an array of third primary color light emitting devices staggered from the first primary color light emitting device array and the second primary color light emitting device array;

the active matrix display control circuit controls and drives each light-emitting device through a metal rivet electrode array at the bottom of each primary light-emitting device and a transparent metal universal electrode at the top of each primary light-emitting device to form the flexible active color display module.

Preferably, the first, second and third primary colors are respectively different ones of red light, green light and blue light.

Preferably, the first primary color is red light, the second primary color is blue light, and the third primary color is green light.

Preferably, the first primary color is red light, the second primary color is green light, and the third primary color is blue light.

Preferably, the first primary color is green light, the second primary color is red light, and the third primary color is blue light.

Preferably, the first primary color is green light, the second primary color is blue light, and the third primary color is red light.

Preferably, the first primary color is blue light, the second primary color is red light, and the third primary color is green light.

Preferably, the first primary color is blue light, the second primary color is green light, and the third primary color is red light.

Preferably, the flexible active matrix display control circuit of the first layer is a low-temperature polysilicon active TFT array image control circuit;

preferably, the flexible active matrix display control circuit of the first layer is a monocrystalline silicon active CMOS array image control circuit;

preferably, the flexible active matrix display control circuit of the first layer is a low-temperature polysilicon active TFT array image control circuit on a high-temperature compound film substrate;

preferably, the flexible active matrix display control circuit of the first layer is a low-temperature polysilicon active TFT array image control circuit on a stainless steel film substrate.

Preferably, a fifth layer of an array of light emitting devices of a fourth primary color is further included over the fourth layer of the array of light emitting devices of the third primary color, offset from the array of light emitting devices of the first primary color, the array of light emitting devices of the second primary color, and the array of light emitting devices of the third primary color.

Preferably, the fourth primary color is white light.

Preferably, the fourth primary color is yellow light.

Preferably, the light emitting device is a semiconductor light emitting device.

Preferably, the light emitting device is an electric field induced quantum dot light emitting device.

Preferably, the light emitting device is an organic semiconductor light emitting device.

Preferably, the light emitting device is an inorganic semiconductor light emitting device.

Preferably, the light emitting device is a III-V compound semiconductor light emitting device.

Preferably, the light emitting device is a gallium nitride semiconductor light emitting device.

Preferably, the light emitting device is a gallium arsenide semiconductor light emitting device.

Preferably, the light emitting device is an indium phosphide semiconductor light emitting device.

Preferably, the flexible active matrix display control circuit precisely controls the luminance or the gray scale of the light emitting device in a pulse width modulation mode.

Preferably, each primary color light emitting device array layer is fixed on the flexible active matrix display control circuit substrate through the interface by a metal rivet electrode array.

Preferably, the array layers of each primary light emitting device are not on the same horizontal plane.

Preferably, the topmost light-emitting device layer further comprises a polarizing film thereon to filter out astigmatism generated by the light-emitting array.

Preferably, a touch screen sensitive to touch static electricity induction is further included on the topmost light-emitting device layer.

By adopting the scheme, the flexible active color display module can be manufactured, can be used independently, can also be spliced to manufacture a flexible display screen, has the advantages of simple process and stable structure, and can realize the folding performance based on the flexible active matrix display control circuit substrate.

Drawings

FIG. 1 is a schematic perspective internal view of an embodiment of the present invention;

FIG. 2 is a schematic cross-sectional view of another embodiment of the present invention;

FIG. 3 is a schematic illustration of the preparation of another embodiment of the present invention;

FIG. 4 is a schematic illustration of the preparation of another embodiment of the present invention;

FIG. 5 is a schematic illustration of another embodiment of the present invention.

Detailed Description

In order to facilitate an understanding of the invention, the invention is described in more detail below with reference to the accompanying drawings and specific examples. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. It will be understood that when an element is referred to as being "secured to" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present.

Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.

One embodiment of the present invention is a flexible active color display module, comprising: the flexible active matrix display control circuit substrate is used as a first layer; a second layer of the array of first primary light emitting devices; a third layer of an array of second primary color light emitting devices staggered from the array of first primary color light emitting devices; and a fourth layer of an array of light emitting devices of a third primary color staggered in position with the array of light emitting devices of the first primary color and the array of light emitting devices of the second primary color; the active matrix display control circuit controls and drives each light-emitting device through a metal rivet electrode array at the bottom of each primary light-emitting device and a transparent metal universal electrode at the top of each primary light-emitting device to form the flexible active color display module. Therefore, the flexible active color display module can be manufactured, can be used independently, can also be spliced to manufacture a flexible display screen, has the advantages of simple process and stable structure, and can realize the folding performance based on the flexible active matrix display control circuit substrate.

In one embodiment, a flexible active color display module, or an active semiconductor color display panel, includes: 3 layers of 3-primary color III-V group LED arrays are crossed to form a micro LED color display screen; and a III-V blue LED array intermediate layer corresponding to the control electrode array on the top of the active matrix; and a thin film matrix top layer of green and red quantum dots or phosphor corresponding to the blue LED array. For example, a low-temperature co-melting chip bonding mode is adopted to bond the III-V group blue LED epitaxial chip and the active matrix display control chip into an active blue LED display; and then selectively manufacturing a quantum dot thin film array for etching green light and red light on the surface of the blue LED display to form a color display screen with 3 primary colors. In a whole, the invention adopts the 3-dimensional three-dimensional structure 3-primary color LED pixel array micro LED display technology, increases the surface adsorption force by utilizing the surface metal coating, and peels off the LED epitaxial layer sapphire substrate on the surface of the plastic polymer by using ultraviolet laser scanning; preferably, the plastic polymer is or comprises pi (polyimide); transferring the LED epitaxial chip-level light-emitting layer film on the surface of the plastic polymer for multiple times; securing two sheets of film securely at room temperature by passing an array of metal nails (Over-etched Via Plugs) or an array of media nails through the adhesive interface; wherein the nail may also be referred to as a rivet.

Preferably, the first, second and third primary colors are respectively different ones of red light, green light and blue light, that is, the first, second and third primary colors are respectively selected from red light, green light and blue light, and the first, second and third primary colors are different. For example, the first primary color is red, the second primary color is blue, and the third primary color is green. For example, the first primary color is red, the second primary color is green, and the third primary color is blue. For example, the first primary color is green light, the second primary color is red light, and the third primary color is blue light. For example, the first primary color is green light, the second primary color is blue light, and the third primary color is red light. For example, the first primary color is blue light, the second primary color is red light, and the third primary color is green light. For example, the first primary color is blue light, the second primary color is green light, and the third primary color is red light.

Preferably, the active matrix display control circuit in the flexible active matrix display control circuit substrate of the first layer, that is, the first layer has a flexible low-temperature polysilicon active TFT array image control circuit substrate; the active matrix display control circuit is a low-temperature polysilicon active TFT array image control circuit, and the rest of the embodiments are similar. Preferably, the flexible active matrix display control circuit of the first layer is a low-temperature polysilicon active TFT array image control circuit on a high-temperature compound film substrate; for example, the high temperature compound film is Polyimide (Polyimide) or the like. Preferably, the flexible active matrix display control circuit of the first layer is a low-temperature polysilicon active TFT array image control circuit on a stainless steel film substrate. Preferably, the flexible active matrix display control circuit of the first layer is a single crystal silicon active CMOS array image control circuit. Preferably, a fifth layer of an array of light emitting devices of a fourth primary color is further included over the fourth layer of the array of light emitting devices of the third primary color, offset from the array of light emitting devices of the first primary color, the array of light emitting devices of the second primary color, and the array of light emitting devices of the third primary color. Preferably, the fourth primary color is white light. Alternatively, the fourth primary color is yellow light.

Preferably, the light emitting device is a semiconductor light emitting device. Preferably, the light emitting device is an electric field induced quantum dot light emitting device. Preferably, the light emitting device is an organic semiconductor light emitting device. Preferably, the light emitting device is an inorganic semiconductor light emitting device. Preferably, the light emitting device is a III-V compound semiconductor light emitting device. Preferably, the light emitting device is a gallium nitride (GaN) semiconductor light emitting device. Preferably, the light emitting device is a gallium arsenide (GaAs) semiconductor light emitting device. Preferably, the light emitting device is an indium phosphide (InP) semiconductor light emitting device.

Preferably, the flexible active matrix display control circuit precisely controls the luminance or the gray scale of the light emitting device in a Pulse Width Modulation (PWM) manner. Preferably, each primary color light emitting device array layer is fixed on the flexible active matrix display control circuit substrate through the interface by a metal rivet electrode array. For example, the metal rivet electrode array in various embodiments is a metal electrode array including a plurality of metal electrodes, each of which is embedded in the metal electrode array, like a rivet. It will be appreciated that the "rivet" in the metal rivet electrode is in a form that functions like a "rivet" or is structurally like a "rivet" for accomplishing the fastening function, which should not be limited by the existing rivets. Preferably, the metal rivet electrode array is realized by adopting the following modes: firstly, the metal diffusion preventing wall is precipitated to form a blocking hollow column, and then conductive metal is precipitated and filled to form the metal rivet electrode array.

Preferably, the topmost light-emitting device layer further comprises a polarizing film thereon to filter out astigmatism generated by the light-emitting array. Preferably, a touch screen sensitive to touch static electricity induction is further included on the topmost light-emitting device layer. For example, a polarizing film is included on the topmost light emitting device layer to filter out stray light generated by the light emitting array, and a touch screen sensitive to touch static induction is included on the polarizing film.

Preferably, the flexible active matrix display control circuit substrate comprises a flexible substrate film and a low-temperature polysilicon active TFT array image control circuit; preferably, the flexible active matrix display control circuit substrate comprises a flexible substrate film, a low-temperature polysilicon active TFT array image control circuit and a metal electrode array. Preferably, the flexible substrate (or referred to as a flexible substrate film) is a film material selected from one of the following materials: high-temperature plastic polymer film, stainless steel film, monocrystalline silicon film and polycrystalline silicon film; preferably, the high temperature plastic polymer film is used to peel the flexible active display screen from the glass substrate using ultraviolet excimer laser scanning. Preferably, the high temperature plastic polymer film comprises a plastic compound such as Polyimide.

Preferably, as shown in fig. 1, a flexible active color display module comprises: the touch screen comprises aflexible substrate film 210, a low-temperature polysilicon active TFT arrayimage control circuit 220, ametal electrode array 230, agreen LED array 111, agreen LED array 112, ablue LED array 121, ablue LED array 122, ared LED array 131, a red LED array 132, atransparent film medium 141, atransparent film medium 142, atransparent film medium 143, apolarizing film 151 and a touchsensitive film 152. In order to make fig. 1 clear and easy to understand, only two green LED arrays, two blue LED arrays and two red LED arrays are shown, in practical application, a plurality of green LED arrays, a plurality of blue LED arrays and a plurality of red LED arrays may be designed; the quantity of the transparent film media is analogized in the same way; preferably, the number of the green LED arrays, the blue LED arrays and the red LED arrays in the flexible active color display module is the same.

Preferably, as shown in fig. 2, a flexible active color display module comprises: the touch screen comprises aflexible substrate film 210, a low-temperature polysilicon active TFT arrayimage control circuit 220, agreen LED array 111, ablue LED array 121, ared LED array 131, a fourth transparent metal electrode strip 311 (forming a third layer of transparent electrode array), a third transparent metal electrode strip 312 (forming a second layer of transparent electrode array), a second transparent metal electrode strip 313 (forming a first layer of transparent electrode array), a first metal electrode strip 314 (forming a metal electrode array), a plurality of non-conductive media, a first layer of metal conductive rivet, a second layer of metalconductive rivet 331, apolarized film 151 and a touchsensitive film 152. Wherein the plurality of non-conductive media includesnon-conductive media 321,non-conductive media 322,non-conductive media 323,non-conductive media 324, andnon-conductive media 325. The first layer of metal conductive rivets includes second metalconductive rivets 332 and first metal conductive rivets 333. The outer side of each metal conductive rivet is provided with a metal diffusion-proof blockinghollow hole 341.

As shown in fig. 1 and 2, the flexible active color display module has the following hierarchical structure: the touch screen comprises aflexible substrate film 210, a low-temperature polysilicon active TFT arrayimage control circuit 220, ametal electrode array 230, ared LED array 131, a first layer of transparent electrode array, ablue LED array 121, a second layer of transparent electrode array, agreen LED array 111, a third layer of transparent electrode array (also called as transparent electrode film), apolarizing film 151 and a touchsensitive film 152.

Preferably, the array layers of each primary light emitting device are not on the same horizontal plane. Preferably, a 3-primary-color LED array and a color display film substructure are formed in the flexible active color display module. The 3-primary-color LED array comprises 3 primary-color LED arrays which are not on the same horizontal plane, wherein the LED arrays of each primary color are located on the same horizontal plane, and the LED arrays of the 3 primary colors are respectively located on different horizontal planes. Preferably, the 3-primary-color LED array comprises a first metal electrode layer (namely, a metal electrode array), a p-InGaP layer, a red quantum light emitting layer (namely, a red LED array), an n-InGaP layer, a second metal electrode layer (namely, a first transparent electrode array), a p-InGaP layer, a blue quantum light emitting layer (namely, a blue LED array), an n-InGaP layer, a third metal electrode layer (namely, a second transparent electrode array), a p-InGaP layer, a green quantum light emitting layer (namely, a green LED array), an n-InGaP layer and a fourth metal electrode layer (namely, a third transparent electrode array, which can also be called as a metal electrode strip) which are sequentially arranged and respectively positioned on different horizontal planes. Preferably, the color display film sub-structure comprises a flexible substrate film, an active image driving circuit (namely, a flexible active matrix display control circuit or an active TFT array image control circuit or a flexible active TFT array image control circuit), a metal electrode array, a red LED array, a first transparent electrode array, a blue LED array, a second transparent electrode array, a green LED array, a third transparent electrode array, a polarizing film and a touch sensitive film, which are sequentially arranged.

Preferably, as shown in fig. 3, the flexible active color display module has a bottom red layer (i.e., a second layer) 421, a middle blue layer (i.e., a third layer) 422, and a top green layer (i.e., a fourth layer) 423, wherein the column electrode line 411, therow 2electrode line 412, the row 3electrode line 413, and the row 4electrode line 414 are designed as shown in fig. 3, and the rows of LED arrays share a ground electrode line, i.e., each row of red LED arrays, each row of blue LED arrays, and each row of green LED arrays share a ground electrode line.

Preferably, the second layer, the third layer and the fourth layer of the flexible active color display module are sequentially implemented as shown in fig. 4, and respectively implement fabrication of a bottom layer (i.e., the second layer) red LED cathode-anode electrode 451, a middle layer (i.e., the third layer) blue LED cathode-anode electrode 452 and an upper layer (i.e., the fourth layer) green LED cathode-anode electrode 453, wherein the bottom layer is provided with a bottom layer metal conductive rivet array, the middle layer is provided with a middle layer metal conductive rivet array, the bottom layer red LED is provided with a second transparentmetal electrode strip 442, the middle layer blue LED is provided with a third transparentmetal electrode strip 443, and the upper layer green LED is provided with a fourth transparentmetal electrode strip 444. The bottom layer metal conductive rivet array comprises a first bottom layer metalconductive rivet array 431 and a second bottom layer metalconductive rivet array 432, and a middle layer metal conductive rivet array is arranged on the second bottom layer metalconductive rivet array 432 to form a double-layer metalconductive rivet 433.

Preferably, as shown in fig. 5, from different perspectives, the flexible active color display module has a top view diagram 100 and a cross-sectional enlarged schematic diagram 200, each layer and each primary color light emitting device on the first layer are disposed on the low-temperature polysilicon active TFT arrayimage control circuit 220, the bottom red LED negative andpositive electrodes 451, the middle blue LED negative andpositive electrodes 452 and the upper green LED negative andpositive electrodes 453 are sequentially disposed, a bottom metalconductive rivet array 434 is disposed beside the bottom red LED negative andpositive electrodes 451, a double-layer metalconductive rivet 433 is disposed beside the middle blue LED negative andpositive electrodes 452, the bottom red LED negative andpositive electrodes 451 has therow 2electrode lines 412 on the upper portion, the middle blue LED negative andpositive electrodes 452 has the row 3electrode lines 413 on the upper portion, and the upper green LED negative andpositive electrodes 453 has the row 4electrode lines 414 on the upper portion.

Preferably, any adjacent two of the first layer, the second layer, the third layer and the fourth layer are bonded by the transparent metal film at a low temperature, for example, any adjacent two of the first layer, the second layer, the third layer and the fourth layer are bonded by the transparent metal film at a low temperature by heating for one hour to be not more than 300 ℃. Preferably, the second layer is bonded to the first layer, the third layer is bonded to the second layer, and the fourth layer is bonded to the third layer by a low-temperature co-fusion chip bonding method.

Preferably, the flexible active color display module further comprises a fifth layer disposed on the fourth layer, wherein the fifth layer is a polarized light film layer; preferably, the flexible active color display module further comprises a sixth layer disposed on the fifth layer, wherein the sixth layer is a touch protection film layer.

A specific implementation method of the flexible active color display module is provided below, that is, in each embodiment, the flexible active color display module is implemented by the following steps; preferably, the flexible active color display module is implemented by using part or all of the following steps.

S1a, epitaxially growing a III-V group green light quantum layer on a sapphire substrate by Molecular Beam Epitaxy (MBE) or Metal Organic Chemical Vapor Deposition (MOCVD); thereby obtaining a third primary color light emitting device for the fourth layer; preferably, the green quantum layer has an emission wavelength of 520 nm.

S1b, epitaxially growing a III-V blue light quantum layer on a sapphire substrate by using an MBE (molecular beam epitaxy) or MOCVD (metal organic chemical vapor deposition) mode; thereby obtaining a second primary light emitting device for the third layer; preferably, the blue quantum layer has an emission wavelength of 460 nm.

S1c, epitaxially growing a III-V group red quantum layer on a GaP, INP or GaAs substrate by using an MBE or MOCVD mode; thereby obtaining a first primary color light emitting device for the second layer; preferably, the emission wavelength of the red quantum layer is 650 nm.

S2, manufacturing a low-temperature polycrystalline silicon active TFT array image control circuit on the flexible substrate film on the glass substrate; thereby obtaining a first layer; in this step of the related embodiments, "fabricating the low temperature polysilicon active TFT array image control circuit on the flexible substrate film on the glass substrate" may be replaced with "fabricating the low temperature polysilicon active TFT array image control circuit on the flexible substrate film on the glass substrate or the stainless steel substrate".

S3a, after cleaning the two surfaces, depositing a layer of surface bonding metal film on the surface of the active TFT array image control circuit, and then carrying out face-to-face accurate calibration;

s3b, bonding the red LED light-emitting epitaxial chip on the TFT matrix control circuit by using the surface adsorption force, and heating to a temperature not higher than 300 ℃ for heat treatment; thereby achieving the provision of the second layer on the first layer; in the step, two different chips are bonded by using a transparent metal film at low temperature; an example is given below: and (3) the LED epitaxial light-emitting chips with different primary colors are respectively bonded to the low-temperature polysilicon active TFT array image control circuit baseplate in sequence under a low-temperature environment. The specific method is to use a transparent iridium-tin oxide (ITO) film as an adhesive intermediate layer at the temperature of about 300 ℃: at 1X 10^-6Firstly plating a layer in a vacuum chamber environment of Torr

A film of titanium metal adhesive as a diffusion barrier layer, which is subsequently applied

The ITO of the active TFT array image control circuit substrate is sputtered on the surface of the active TFT array image control circuit substrate; then at 1X 10^-3In a vacuum chamber environment of Torr, or under atmospheric pressure nitrogen (N)₂) The two wafers were placed in a vacuum chamber in an environment where they were aligned precisely face-to-face and then clamped together with a bond chuck, with 30psi pressure applied to both sides of the bonded die and heated to a temperature not exceeding 300 c for a period of time greater than 1 hour.

S4, stripping off the substrate of the red light epitaxial LED light-emitting chip, and then thinning the n-electrode layer on the red light epitaxial LED light-emitting film; comprises separating gallium arsenide substrate (GaAs) by chemical etching, separating gallium arsenide substrate by Nd with wavelength of 532nm, YAG laser method, or separating gallium phosphide GaP substrate by short pulse KrF ultraviolet excimer laser method; several specific examples are given below.

The gallium arsenide substrate is separated by a chemical corrosion method, and because the gallium arsenide semiconductor substrate for manufacturing the red light LED is opaque, the gallium arsenide semiconductor substrate is specifically as follows: an intermediate sacrificial layer of AlAs or InAlP is grown on the GaAs substrate in advance before the AlGaAs or InAlGaP color quantum layer is epitaxially grown. Selectively etching the middle sacrificial layer by HF acidic etching solution to strip the gallium arsenide semiconductor substrate from the red LED light-emitting chip; or the gallium arsenide semiconductor substrate is stripped from the red LED light-emitting chip by selectively etching the middle sacrificial layer through HCl acidic etching liquid.

YAG laser method of wavelength 532nm is used for separating the gallium arsenide substrate, specifically: the InGaAsN epitaxial layer is used as an intermediate sacrificial layer, and then the intermediate sacrificial layer is selectively laser-decomposed to completely strip the GaAs substrate. The chemical composition of the InGaAsN layer is adjusted to make the energy band gap lower than 1.165eV (the energy of 1064nm photons); thus, the InGaAsN layer strongly absorbs the laser energy of 1064nm, and the GaAs substrate is effective for 532nm laserIs transparent. The pulse duration of the Nd: YAG laser is controlled at FWHM 8 to 9ns and the energy is controlled at 0.6J/cm by using Q-switch form²To 3.5J/cm²After the laser pulse energy is absorbed, the intermediate sacrificial layer of InGaAsN is ablated, the AlGaAs or InAlGaP red quantum layer film is separated from the GaAs substrate, and the crack-free AlGaAs or InAlGaP red quantum layer film is generated and adhered on the flexible polymer substrate of the active TFT image drive circuit.

The gallium phosphide GaP substrate is separated by a short-pulse KrF ultraviolet excimer laser method. Whereas gallium phosphide GaP substrates are relatively transparent to violet light, AlGaAs or InAlGaP red quantum layers are opaque and strongly absorb ultraviolet light energy. Thus, in particular: scanning with a UV excimer laser at 248nm or 308nm can separate AlGaAs or InAlGaP red quantum layers from the transparent slit gallium phosphide GaP substrate thoroughly by photochemical selective decomposition.

S5, selectively etching the epitaxial light-emitting layer of the red LED and the metal bonding film to form a red LED pixel array;

s6, filling the surface with a medium, selectively etching the hollow hole array corresponding to the active TFT array image control circuit electrode with a plasma chemical vapor medium, depositing a layer of metal diffusion prevention barrier wall to form a hollow column, filling metal to form a rivet type electrode to pass through the interface to fix the light emitting layer, and then flattening the surface; preferably, the filling of the surface with the medium comprises: and depositing silicon oxide or silicon nitride transparent medium by adopting a chemical vapor deposition method or a physical vapor deposition method to completely fill and level the surface. Preferably, the flattening the surface comprises grinding the surface of the flexible active color display module by a chemical mechanical grinding method; preferably, the planarizing the surface includes planarizing the surface of the flexible active color display module by etching the surface using a non-directional plasma chemical etching method.

S7, depositing a layer of transparent bonding metal film on the surface of the red LED pixel array, bonding a blue LED light-emitting epitaxial chip on the transparent metal film, heating to a temperature not higher than 300 ℃, carrying out laser stripping on a sapphire substrate of the LED chip, and thinning the n-GaN layer;

s8, selectively forming a crossed blue LED epitaxial array on the blue LED semiconductor epitaxial layer by plasma chemical vapor etching;

s9, selectively forming crossed blue LED pixel arrays and electrodes of red LED arrays on the metal film by plasma chemical vapor etching;

s10, filling the whole surface with a medium, selectively etching the hollow hole array corresponding to the active TFT array image control circuit electrode with a plasma chemical gas phase medium, depositing a layer of metal diffusion prevention barrier wall to form a hollow column, filling metal to form a rivet type electrode array to pass through the interface to fix the light emitting layer; then flattening the surface to obtain a flattened surface; thereby achieving the provision of a third layer on the second layer;

s11, depositing a layer of transparent bonding metal film on the surface of the blue LED epitaxial array, bonding the green LED light-emitting epitaxial chip on the transparent metal film, heating to a temperature not higher than 300 ℃, carrying out laser stripping on the sapphire substrate of the green LED chip, and thinning the n-GaN layer; a specific example is given below: the GaN film was peeled from the sapphire substrate by a short pulse KrF UV excimer laser at 248nm wavelength and power ranging from 0.4 to 0.8J/cm 2. The ultraviolet excimer laser can heat the interface of the sapphire and the LED film to a high temperature of more than 1000 ℃ in a very short distance, and Ga low-melting-point metal and nitrogen gas decomposed from GaN are trapped at the interface, so that the LED light-emitting layer film is thoroughly separated from the sapphire substrate. The laser lift-off of the sapphire substrate of the green LED chip in the subsequent steps is the same.

S12, selectively forming a crossed green LED epitaxial array on the green LED semiconductor epitaxial layer by plasma chemical vapor etching;

s13, selectively forming a crossed green LED pixel array and a universal electrode of a blue LED array on the metal film by plasma chemical vapor etching, and filling the surface with a transparent medium;

s14, depositing a layer of transparent metal film on the green LED pixel array to form a common electrode of the green LED epitaxial array, thereby completing the green LED array pixel; thereby achieving the provision of a fourth layer on the third layer;

s15, selectively carrying out plasma chemical vapor etching on the transparent metal film so as to form a metal electrode array on the green LED epitaxial array; alternatively, this process step may be omitted, given that the metal film is transparent;

s16, depositing a polarized light film, and then manufacturing a touch protection film layer sensitive to touch induction on the polarized light film; thereby realizing that a fifth layer is arranged on the fourth layer and a sixth layer is arranged on the fifth layer; the provision of a thin film of polarised light is advantageous in reducing scattering of disordered light within the display module and thus enhancing image contrast.

And S17, peeling the flexible active display screen from the glass substrate by using ultraviolet excimer laser scanning.

For example, a flexible active color display module, which is implemented using the above steps S1a to S17; for example, a flexible active color display module implemented using the above steps S1a through S17 but not including the above step S15.

Further, the embodiment of the present invention further includes a flexible active color display module formed by combining the technical features of the above embodiments.

The technical features mentioned above are combined with each other to form various embodiments which are not listed above, and all of them are regarded as the scope of the present invention described in the specification; also, modifications and variations may be suggested to those skilled in the art in light of the above teachings, and it is intended to cover all such modifications and variations as fall within the true spirit and scope of the invention as defined by the appended claims.

Claims (21)

1. A flexible active color display module, comprising:

the flexible active matrix display control circuit substrate is used as a first layer and comprises a flexible substrate film and a low-temperature polycrystalline silicon active TFT array image control circuit; and

a second layer of the array of first primary light emitting devices; and

a third layer of an array of second primary color light emitting devices staggered from the array of first primary color light emitting devices; and

a fourth layer of an array of third primary color light emitting devices staggered from the first primary color light emitting device array and the second primary color light emitting device array;

the flexible active matrix display control circuit controls and drives each light-emitting device through a metal rivet electrode array at the bottom of each primary light-emitting device and a transparent metal universal electrode at the top of each primary light-emitting device to form a flexible active color display module;

the metal rivet electrode array is realized by adopting the following modes: firstly, depositing a metal diffusion prevention wall to form a blocking hollow column, and then depositing and filling conductive metal to form a metal rivet electrode array;

any adjacent two layers of the first layer, the second layer, the third layer and the fourth layer are bonded by a transparent metal film at low temperature; wherein, the epitaxial light-emitting chips of 3 different primary colors are respectively adhered to the bottom plate of the low-temperature polysilicon active TFT array image control circuit in sequence under low temperature environment, the transparent metal ITO film is used as an adhesion intermediate layer at 300 ℃, and the temperature is 1 multiplied by 10^-6Plating a layer of 300 angstrom titanium metal adhesive film as a diffusion barrier layer in a vacuum chamber environment, and then sputtering 1400 angstrom ITO onto the surface of the active TFT array image control circuit base plate; then at 1X 10^-3Placing two wafers in a vacuum chamber in a vacuum environment or in an atmospheric nitrogen environment, aligning the two wafers precisely face to face, then clamping the two wafers together with a bonding chuck, applying 30psi pressure to both sides of the bonded die and heating to no more than 300 ℃ for more than 1 hour;

the second layer is provided with a bottom layer metal conductive rivet array, the third layer is provided with a middle layer metal conductive rivet array, the second layer is provided with a second transparent metal electrode strip, the third layer is provided with a third transparent metal electrode strip, the fourth layer is provided with a fourth transparent metal electrode strip, the bottom layer metal conductive rivet array comprises a first bottom layer metal conductive rivet array and a second bottom layer metal conductive rivet array, and the second bottom layer metal conductive rivet array is provided with a middle layer metal conductive rivet array to form the double-layer metal conductive rivet.

2. The flexible active color display module of claim 1, wherein the first, second and third primary colors are respectively a different one of red, green and blue.

3. The flexible active color display module of claim 1, wherein the flexible active matrix display control circuitry of the first layer is low temperature polysilicon active TFT array image control circuitry;

or the flexible active matrix display control circuit of the first layer is a monocrystalline silicon active CMOS array image control circuit.

4. The flexible active color display module of claim 3, wherein the flexible active matrix display control circuitry of the first layer is low temperature polysilicon active TFT array image control circuitry on a high temperature compound thin film substrate.

5. The flexible active color display module of claim 3, wherein the flexible active matrix display control circuitry of the first layer is low temperature polysilicon active TFT array image control circuitry on a stainless steel thin film substrate.

6. The flexible active color display module of claim 1, further comprising a fifth layer of an array of fourth primary color light emitting devices positioned offset from the array of first primary color light emitting devices, the array of second primary color light emitting devices, and the array of third primary color light emitting devices, over the fourth layer of the array of third primary color light emitting devices.

7. The flexible active color display module of claim 6, wherein the fourth primary color is white light.

8. The flexible active color display module of claim 6, wherein the fourth primary color is yellow light.

9. The flexible active color display module of claim 1, wherein the light emitting device is a semiconductor light emitting device.

10. The flexible active color display module of claim 9, wherein the light emitting device is an electroluminescent quantum dot light emitting device.

11. The flexible active color display module of claim 9, wherein the light emitting device is an organic semiconductor light emitting device.

12. The flexible active color display module of claim 9, wherein the light emitting device is an inorganic semiconductor light emitting device.

13. The flexible active color display module of claim 9, wherein the light emitting device is a III-V compound semiconductor light emitting device.

14. The flexible active color display module of claim 9, wherein the light emitting device is a gallium nitride semiconductor light emitting device.

15. The flexible active color display module of claim 9, wherein the light emitting device is a gallium arsenide semiconductor light emitting device.

16. The flexible active color display module of claim 9, wherein the light emitting device is an indium phosphide semiconductor light emitting device.

17. The flexible active color display module of claim 1, wherein the flexible active matrix display control circuit precisely controls the brightness or gray scale of the light emitting device using pulse width modulation.

18. The flexible active color display module of claim 1, wherein each primary light emitting device array layer is affixed to the flexible active matrix display control circuit substrate through an interface by an array of metal rivet electrodes.

19. The flexible active color display module of claim 1, wherein each primary light emitting device array layer is not on the same horizontal plane.

20. The flexible active color display module of claim 1, further comprising a polarizing film on the topmost light emitting device layer to filter out astigmatism generated by the light emitting array.

21. The flexible active color display module according to any of claims 1 to 20, further comprising a layer of touch screen sensitive to touch static electricity induction above the topmost light emitting device layer; and, the flexible active color display module is implemented using the following steps:

s1a, epitaxially growing a III-V group green light quantum layer on a sapphire substrate in a molecular beam epitaxy or metal organic compound chemical vapor deposition mode to obtain a third primary color light-emitting device used by a fourth layer;

s1b, epitaxially growing a III-V group blue light quantum layer on a sapphire substrate in a molecular beam epitaxy or metal organic compound chemical vapor deposition mode to obtain a second primary color light-emitting device used for a third layer;

s1c, epitaxially growing a III-V group red quantum layer on a GaP, INP or GaAs substrate by molecular beam epitaxy or a chemical vapor deposition of a metal organic compound to obtain a first primary color light-emitting device used by a second layer;

s2, manufacturing a low-temperature polycrystalline silicon active TFT array image control circuit on a flexible substrate film on a glass substrate or a stainless steel substrate to obtain a first layer;

s3a, after cleaning the two surfaces, depositing a layer of surface bonding metal film on the surface of the active TFT array image control circuit, and then carrying out face-to-face accurate calibration;

s3b, adhering the red LED light-emitting epitaxial chip on the TFT matrix control circuit by using surface adsorption force, and heating to a temperature not higher than 300 ℃ for heat treatment to realize that the second layer is arranged on the first layer;

s4, stripping off the substrate of the red light epitaxial LED light-emitting chip, and then thinning the n-electrode layer on the red light epitaxial LED light-emitting film; the method comprises separating gallium arsenide substrate by chemical etching, separating gallium arsenide substrate by Nd with wavelength of 532nm with YAG laser method, or separating gallium phosphide GaP substrate by short pulse KrF ultraviolet excimer laser method;

s5, selectively etching the epitaxial light-emitting layer of the red LED and the metal bonding film to form a red LED pixel array;

s6, filling the surface with a medium, selectively etching the hollow hole array corresponding to the active TFT array image control circuit electrode with a plasma chemical vapor medium, depositing a layer of metal diffusion prevention barrier wall to form a hollow column, filling metal to form a rivet type electrode to pass through the interface to fix the light emitting layer, and then flattening the surface;

s7, depositing a layer of transparent bonding metal film on the surface of the red LED pixel array, bonding a blue LED light-emitting epitaxial chip on the transparent metal film, heating to a temperature not higher than 300 ℃, carrying out laser stripping on a sapphire substrate of the LED chip, and thinning the n-GaN layer;

s8, selectively forming a crossed blue LED epitaxial array on the blue LED semiconductor epitaxial layer by plasma chemical vapor etching;

s9, selectively forming crossed blue LED pixel arrays and electrodes of red LED arrays on the metal film by plasma chemical vapor etching;

s10, filling the whole surface with a medium, selectively etching the hollow hole array corresponding to the active TFT array image control circuit electrode with a plasma chemical gas phase medium, depositing a layer of metal diffusion prevention barrier wall to form a hollow column, filling metal to form a rivet type electrode array to pass through the interface to fix the light emitting layer; then, flattening the surface to obtain a flattened surface, and realizing the arrangement of a third layer on the second layer;

s11, depositing a layer of transparent bonding metal film on the surface of the blue LED epitaxial array, bonding the green LED light-emitting epitaxial chip on the transparent metal film, heating to a temperature not higher than 300 ℃, carrying out laser stripping on the sapphire substrate of the green LED chip, and thinning the n-GaN layer;

s12, selectively forming a crossed green LED epitaxial array on the green LED semiconductor epitaxial layer by plasma chemical vapor etching;

s13, selectively forming a crossed green LED pixel array and a universal electrode of a blue LED array on the metal film by plasma chemical vapor etching, and filling the surface with a transparent medium;

s14, depositing a layer of transparent metal film on the green LED pixel array to form a common electrode of a green LED epitaxial array, thereby completing a green LED array pixel, and realizing that a fourth layer is arranged on the third layer;

s15, selectively carrying out plasma chemical vapor etching on the transparent metal film so as to form a metal electrode array on the green LED epitaxial array;

s16, depositing a polarized light film, and then manufacturing a touch protection film layer sensitive to touch induction on the polarized light film, so as to realize that a fifth layer is arranged on a fourth layer and a sixth layer is arranged on the fifth layer;

and S17, peeling the flexible active display screen from the glass substrate by using ultraviolet excimer laser scanning.

Images