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CN109437094A - A kind of pliable pressure sensor array and preparation method thereof - Google Patents

A kind of pliable pressure sensor array and preparation method thereof
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Publication number
CN109437094A
CN109437094ACN201811269542.3ACN201811269542ACN109437094ACN 109437094 ACN109437094 ACN 109437094ACN 201811269542 ACN201811269542 ACN 201811269542ACN 109437094 ACN109437094 ACN 109437094A
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layer
pressure sensor
sensor array
silicon
silicon resistor
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CN109437094B (en
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余家阔
高成臣
孙泽文
程胜战
原福贞
陈有荣
毛子木
韩超
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Peking University
Peking University Third Hospital
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Peking University
Peking University Third Hospital
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Abstract

Translated fromChinese

本发明涉及一种柔性压力传感器阵列及其制备方法,其中方法包括:在SOI基片上通过光刻及刻蚀对硅电阻进行图形化;生长二氧化硅层;向二氧化硅层下图形化的硅电阻注入硼离子,并在两端位置进行重掺杂以形成欧姆接触区;在每根硅电阻条的欧姆接触区上方打开电极窗口;溅射导电材料,制备接触电极和下层引线;生长聚对二甲苯介质层;在聚对二甲苯介质层上对应第二接触电极的区域制备引线孔;溅射导电材料制备上层引线;在器件上表面旋涂形成第一聚酰亚胺包覆层;在第一聚酰亚胺包覆层上表面暂键合;去除器件下方SOI基片的埋氧层及衬底;旋涂第二聚酰亚胺包覆层;解除上表面暂键合。本发明采用聚酰亚胺以及聚对二甲苯,保证柔性以及生物兼容性。

The invention relates to a flexible pressure sensor array and a preparation method thereof, wherein the method comprises: patterning a silicon resistor on an SOI substrate by photolithography and etching; growing a silicon dioxide layer; The silicon resistors are implanted with boron ions and heavily doped at both ends to form ohmic contact regions; electrode windows are opened above the ohmic contact regions of each silicon resistor strip; conductive materials are sputtered to prepare contact electrodes and underlying leads; growth poly p-xylene dielectric layer; lead holes are prepared in the area corresponding to the second contact electrode on the parylene dielectric layer; upper-layer leads are prepared by sputtering conductive materials; a first polyimide coating layer is formed by spin coating on the upper surface of the device; The upper surface of the first polyimide cladding layer is temporarily bonded; the buried oxide layer and the substrate of the SOI substrate below the device are removed; the second polyimide cladding layer is spin-coated; and the upper surface is temporarily bonded. The present invention adopts polyimide and parylene to ensure flexibility and biocompatibility.

Description

A kind of pliable pressure sensor array and preparation method thereof
Technical field
The present invention relates to sensor technical field more particularly to a kind of pliable pressure sensor array and preparation method thereof andComponent for knee joint pressure measurement.
Background technique
MEMS (Microelectro Mechanical System, MEMS) pressure sensor, usually by silicon cup,Silicon force sensing resistance item is formed by combining, and silicon force sensing resistance item inductively measures surface pressure as pressure drag unit.It surveysThe flexible sensor array of amount pressure distribution guarantees the flexible of pressure sensor usually using polyester material as flexible substratesDegree, to fill the conducting polymer of the materials such as carbon black, graphite or metal formation as pressure drag unit, to surface pressure intoRow inductively measures.
However, existing flexible sensor array has the disadvantage that for knee-joint prosthesis surface pressure measurement(1) there is bio-compatibility in the sensor for being placed in knee-joint prosthesis surface, can not apply to experiment made on the living;(2) it placesMeasured inside knee-joint prosthesis, using pressure drag materials such as conducting polymer etc., can hysteresis to sensor, can measureJourney, accuracy etc. have a negative impact;(3) size limits, and the number of sensors that can be placed on knee-joint prosthesis is less, measurementDot density is lower, it is difficult to reach actual demand effect.(4) range limits, it is difficult to meet inside knee-joint prosthesis range Mpa withOn pressure test demand.
Summary of the invention
The technical problem to be solved by the present invention is at least part of for existing pliable pressure sensor array lacksIt falls into, a kind of pliable pressure sensor array and preparation method thereof and the component for knee joint pressure measurement is provided.
In order to solve the above-mentioned technical problems, the present invention provides a kind of preparation method of pliable pressure sensor array, packetsInclude following steps:
Silicon resistor is patterned by photoetching and etching on SOI Substrate;
Silicon dioxide layer is grown on SOI Substrate after photoetching, as buffering and protective layer;
Patterned silicon resistor injects boron ion under to silicon dioxide layer, and carries out heavy doping in end positions to form siliconThe ohmic contact regions of resistor stripe;
Electrode window through ray is opened above the ohmic contact regions of every silicon resistor item by photoetching;
Sputter conductive material, on the ohmic contact regions at every silicon resistor both ends preparation contact electrode, and prepare and itsIn first contact electrode connection lower layer's lead;
Parylene dielectric layer is grown to cover resistor stripe;
By lithography and etching, the region of corresponding second contact electrode prepares fairlead on Parylene dielectric layer;
Conductive material is sputtered, and prepares the upper layer lead connecting with the second contact electrode;
In device upper surface spin-on polyimide, the first polyimides clad is formed after successively solidifying by temperature gradient;
Upper surface is carried out by temporarily bonding glue on the first polyimides clad to be temporarily bonded;
The buried oxide layer and substrate of SOI Substrate below removal devices;
It is successively sub- by the second polyamides is formed in device bottom surface after temperature gradient solidification in device lower surface spin-on polyimideAmine clad;
It releases upper surface to be temporarily bonded, obtains pliable pressure sensor array.
In the preparation method of pliable pressure sensor array according to the present invention, it is preferable that described to silicon resistorMultiple rows of silicon resistor item is defined after being patterned, the first contact electrode of every row's silicon resistor item passes through parallel upper layer busbarIt draws, the extending direction of every silicon resistor item is consistent and perpendicular to the upper layer busbar connected, and the second of every row's silicon resistor itemIt contacts electrode to draw by parallel lower layer's busbar, the extending direction of lower layer's busbar is parallel to the silicon resistor item.
In the preparation method of pliable pressure sensor array according to the present invention, it is preferable that the preparation methodIn by cutting the buried oxide layer and silicon substrate of the SOI Substrate below thin polishing process removal devices.
In the preparation method of pliable pressure sensor array according to the present invention, it is preferable that the preparation methodIn after spin-on polyimide, successively according to following temperature gradient solidify:
First stage: solidify 10-40min at 60~90 DEG C;
Second stage: solidify 10-40min at 110~130 DEG C;
Phase III: solidify 10-40min at 150-180 DEG C;
Fourth stage: solidify 0-20min at 190~200 DEG C;
5th stage: solidify 10-40min at 210~230 DEG C;
6th stage: solidify 10-40min at 240~260 DEG C.
In the preparation method of pliable pressure sensor array according to the present invention, it is preferable that the SOI Substrate packetInclude pentagonal array area and rectangular lead district;It is described silicon resistor is patterned after multiple rows of silicon resistor item position for definingIn array area, and the arrangement interval of every row's silicon resistor item is equal.
In the preparation method of pliable pressure sensor array according to the present invention, it is preferable that the conductive materialFor Ti/Au.
The present invention also provides a kind of pliable pressure sensor arrays, are prepared using foregoing method.Institute of the present inventionThe pliable pressure sensor array stated can be used for the prosthetic surface pressure measurement of knee joint, joint of vertebral column or hip joint.
The present invention also provides a kind of components for knee joint pressure measurement, comprising:
Knee-joint prosthesis, the knee-joint prosthesis include femoral prosthesis, tibial prosthesis and are installed on the tibial prosthesisThe gasket of side, the upper surface of the gasket offers piece shape slot;
The pliable pressure sensor array of method preparation as described above, is set in the piece shape slot of the gasket.
In the component according to the present invention for knee joint pressure measurement, it is preferable that described shape slot includes: interiorSide condyle slot and external condyle slot;And the cabling channel extended respectively to two sides from entocondyle slot and external condyle slot.
Implement pliable pressure sensor array and preparation method of the invention, has the advantages that use of the present inventionThe good material of the mechanical performances such as polyimides and Parylene, bio-compatibility carries out array of pressure sensorsCladding guarantees its flexible and bio-compatibility, and accordingly provides a set of step of preparation process, can satisfy such as knee jointThe measurement request of pressure distribution.
Detailed description of the invention
Fig. 1 is the pliable pressure sensor array planar structure schematic diagram according to the preferred embodiment of the present invention;
Fig. 2 to Figure 15 is to be illustrated according to the preparation process flow of the pliable pressure sensor array of the preferred embodiment of the present inventionFigure;
Figure 16 is according to knee-joint prosthesis in the knee-joint prosthesis surface pressure measurement component of the preferred embodiment of the present inventionScheme of installation;
Figure 17 is the structure chart according to gasket in the knee-joint prosthesis surface pressure measurement component of the preferred embodiment of the present invention.
Specific embodiment
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present inventionIn attached drawing, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment isA part of the embodiments of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, ordinary skill peopleMember's every other embodiment obtained without making creative work, shall fall within the protection scope of the present invention.
The various structural schematic diagrams according to the embodiment of the present disclosure are shown in the attached drawings.These figures are not drawn to scale, wherein some details are magnified for the purpose of clear expression, and some details may be omitted.It is shown in the drawingsVarious regions, the shape of layer and relative size, positional relationship between them are merely exemplary, in practice may be due to systemIt makes tolerance or technical restriction and is deviated, and those skilled in the art may be additionally designed as required with differenceShape, size, the regions/layers of relative position.
In the context of the disclosure, when one layer/element is referred to as located at another layer/element "upper", which canMay exist intermediate layer/element on another layer/element or between them.In addition, if in a kind of directionIn one layer/element be located at another layer/element "upper", then when turn towards when, which can be located at another layer/memberPart "lower".
Referring to Fig. 1, for according to the pliable pressure sensor array planar structure schematic diagram of the preferred embodiment of the present invention.PleaseIn conjunction with refering to Fig. 2 to Figure 15, the preparation process flow for the pliable pressure sensor array according to the preferred embodiment of the present invention is shownIt is intended to.The embodiment provide pliable pressure sensor array preparation method the following steps are included:
(1) SOI Substrate is provided as shown in Figure 2, and silicon resistor is patterned by photoetching on the SOI Substrate, such asShown in Fig. 3.Wherein SOI Substrate includes silicon resistor layer, buried oxide layer 2 and silicon substrate 3.Silicon resistor layer forms graphically after photoetchingSilicon resistor, including more silicon resistor items 1.The single silicon resistor size of photoetching are as follows: a length of 200~1000um, width be 10~100um, 50~500um of resistor stripe distance.Preferably, the SOI Substrate that the present invention selects includes pentagonal array area 13With rectangular lead district 14, the multiple rows of silicon resistor item 1 defined after being patterned to silicon resistor is located at array area 13, and every rowThe arrangement interval of silicon resistor item 1 is equal.Preferably, pentagonal array area 13 be rectangle unfilled corner design, with knee jointProsthese shape adaptation.
(2) silicon dioxide layer 4 is grown on the SOI Substrate after photoetching, as buffering and protective layer, as shown in Figure 4.
(3) boron ion is injected to silicon resistor patterned under silicon dioxide layer, and carries out heavy doping in end positions with shapeAt the ohmic contact regions 5 of silicon resistor item 1, as shown in Figure 5.Ohmic contact regions 5 can reduce between metal lead wire and silicon resistor itemContact resistance.Silicon resistor item 1 is formed by adulterating B ion, and silicon dioxide layer 4 above works as a buffer.Preferably, shouldThe B of silicon resistor item in step+Dopant dose is 2E13~5E14, and Implantation Energy is 50~180Kev;Silicon resistor both ends ohmThe B of contact area+Dopant dose is 2E15~5E16, and Implantation Energy is 50~180Kev;In injection B+After anneal, temperatureDegree is 800~1050 DEG C, and the time is 3h~for 24 hours, and entire annealing process uses N2Atmosphere.
(4) electrode window through ray is opened above the ohmic contact regions of every silicon resistor item 15 by photoetching, as shown in Figure 6.
(5) conductive material is sputtered, the preparation contact electrode on the ohmic contact regions 5 at every silicon resistor both ends, including theOne contact electrode 61 and the second contact electrode 62, and the lower layer's lead 63 connecting with the wherein first contact electrode 61 is prepared, such as Fig. 7It is shown.Preferably, which is Ti/Au.Ti/Au is by titanium and gold collectively as electrode and lead material, wherein titaniumAdhesiveness between bottom, enhancing and silicon, gold is on upper layer.The thickness of Ti is aboutThe thickness of Au is then
(6) in device upper surface growth Parylene (Parylene) dielectric layer 7 to cover resistor stripe and lower layer's lead63 etc., as shown in Figure 8.Preferably, the parylene dielectric layer 7 generated in the step with a thickness of 2~3um.
(7) by photoetching and etching, the region preparation of corresponding second contact electrode 62 is drawn on Parylene dielectric layer 7String holes, as shown in Figure 9.
(8) conductive material is sputtered, and prepares the upper layer lead 64 connecting with the second contact electrode 62, as shown in Figure 10.It is poly-Paraxylene dielectric layer 7 plays the role of that upper layer lead 64 and lower layer's lead 63 is isolated, while having good biocompatibility.
Above-mentioned upper layer lead 64 includes more parallel upper layer busbars, and lower layer's lead 63 includes under more parallelLayer busbar.Correspondingly, multiple rows of silicon resistor item 1, every row's silicon resistor are defined after being patterned in abovementioned steps to silicon resistorFirst contact electrode 61 of item 1 is drawn by parallel upper layer busbar, and the extending direction of every silicon resistor item is consistent and verticalIn the upper layer busbar connected.Second contact electrode 62 of every row's silicon resistor item is drawn by parallel lower layer's busbar, underThe extending direction of layer busbar is parallel to the silicon resistor item 1.Lead and lower layer's lead are arranged in parallel lead district 14 at the middle and upper levels.ThisInvention is routed by ranks upper layer and lower layer, and is drawn from the same side, reduces lead footprint area, while meeting measurement demand.
(9) at device upper surface spin-on polyimide (PI), the first polyimides is formed after successively solidifying by temperature gradientClad 8, as shown in figure 11.
(10) it carries out upper surface by temporarily bonding glue on the first polyimides clad 8 to be temporarily bonded, as shown in figure 12.Such as first polyimides clad 8 is adhered on the silicon backing wafer with a thickness of 400um by being temporarily bonded glue 9.
(11) buried oxide layer 2 and silicon substrate 3 of the SOI Substrate below removal devices, as shown in figure 13.Preferably, the stepIn by cutting the buried oxide layer 2 and silicon substrate 3 of the SOI Substrate below thin polishing process (CMP) removal devices.
(12) successively poly- by forming second in device bottom surface after temperature gradient solidification in device lower surface spin-on polyimideAcid imide clad 12, as shown in figure 14.
(13) it releases upper surface to be temporarily bonded, obtains pliable pressure sensor array, as shown in figure 15.
Present invention is alternatively directed to the curing process of used polyimides to be studied.Preferably, it is walked in the above methodSuddenly (9) and (12) successively solidify according to following temperature gradient after spin-on polyimide: the first stage: solid at 60~90 DEG CChange 10-40min;Second stage: solidify 10-40min at 110~130 DEG C;Phase III: solidify 10- at 150-180 DEG C40min;Fourth stage: solidify 0-20min at 190~200 DEG C;5th stage: solidify 10-40min at 210~230 DEG C;6th stage: solidify 10-40min at 240~260 DEG C.From down to height, polyimides is continuously passing through above-mentioned six phase temperaturesCross the above process can achieve solidification bond effect well later.The present invention also provides a kind of pliable pressure sensor arraysColumn are prepared using foregoing method.The pliable pressure sensor array can be used for knee joint, joint of vertebral column or hip jointProsthetic surface pressure measurement.
The present invention further correspondingly provides a kind of component for knee joint pressure measurement, includes at least: knee-joint prosthesis andForegoing pliable pressure sensor array.
Figure 16 is please referred to, for according to knee joint in the knee-joint prosthesis surface pressure measurement component of the preferred embodiment of the present inventionThe scheme of installation of prosthese.As shown in the figure, wherein knee-joint prosthesis includes femoral prosthesis 10, tibial prosthesis 20 and gasket 30.StockBone prosthese 10 is installed on 40 distal end of femur after osteotomy, lower surface form and distal femur form one individual before bone-culting operationIt causes, knee joint three-dimensional digitalization model can be established, and be based on the knee joint by the medical image data of previously-scanned individualThree-dimensional digitalization model carries out virtual osteotomy operation, to design personalized femoral prosthesis.Tibial prosthesis 20 is otherwise known asShin bone metal support, 50 proximal end of shin bone after being installed on osteotomy.Tibial prosthesis 20 and gasket 30 are according to before the individual osteotomy of installationProximal tibia shape and design, and by carrying out the personalized prosthese designed after virtual osteotomy operation to shin bone model.ItsThe configuration of surface of the femoral prosthesis 10 of the upper surface form and design of middle gasket 30 matches.Gasket 30 is installed on tibial prosthesis 30Top, and the upper surface of gasket 30 offers piece shape slot 31.Gasket 30 preferably uses ultra high molecular polyethylene gasket.Pliable pressureSensor array is set in the piece shape slot 31 of gasket 30.The Zhou Jing of gasket 30 is consistent with the tibial plateau size of installation individual.The bone surface of actual tibial platform possesses many concaveconvex structures, the form of ultra high molecular polyethylene gasket surface of the inventionIt is that production is gone on the basis of sufficiently imitating original bone surface form and on the basis of prosthese stability Design.This field basePlinth technical staff is known and can design the configuration of surface of the gasket 30, therefore is no longer repeated.
The shape of pliable pressure sensor array 100 is consistent with the piece shape groove shape of gasket 30, for example, by bioadhesiveMode, adhere to 30 surface of gasket, realize postoperative in living animal joint replacement, the mechanics of knee joint surface prosthese is distributedMeasurement.Pliable pressure sensor array is placed on knee-joint prosthesis surface by the present invention, it is possible to reduce the interference of prosthetic material,Improve the accuracy of measurement result.
Figure 17 is please referred to, to pad according in the knee-joint prosthesis surface pressure measurement component of the preferred embodiment of the present inventionThe structure chart of piece.The upper surface of gasket 30 is consistent with the tibial plateau surfaces form of installation individual, each position in piece shape slot 31Thickness it is equal, and the bottom surface radian of piece shape slot 31 is consistent with the radian of tibial plateau surfaces corresponding position.Piece shape slot includes: interiorSide condyle slot 311 and external condyle slot 312;And the cabling channel extended respectively to two sides from entocondyle slot 311 and external condyle slot 312313.Entocondyle slot 311 and external condyle slot 312 are distributed in the position of corresponding shin bone protuberance two sides, and size can be according to installationThe tibial plateau size of body is adjusted.In a preferred embodiment of the invention, entocondyle slot 311 and external condyle slot 312 are inPentagon, this pentagon cover knee joint surface stress area preferably close to ultra high molecular polyethylene edge, the face of each slotProduct is 70mm2 or so, i.e., the length of maximum long side is about 12mm, and front and back bottom edge is respectively 4mm, 7mm.The thickness of the piece shape slot 31Preferred 200um is spent, on the basis of guaranteeing that the tough band width of sensor array sensibility and its covering material requires, is utmostly protectedThe integrality of the structure of original ultra high molecular polyethylene gasket has been held, is provided for detection knee-joint prosthesis surface biological mechanics most trueReal reliable data result.Although give piece shape slot 31 in the embodiment specifically opens up form, this field basis skillArt personnel, which can according to need, to be adjusted.The present invention not only combines PI, parylene material with SOI, is prepared by PIAnd the heavy doping monocrystalline silicon resistance strip array of parylene layers of cladding, according further to the requirement of knee joint pressure test, to its battle arrayColumn distribution, shape etc. have been carried out for design;It is advantageous that can match very well with knee joint measurement environment, has lifeObject compatibility, possesses certain application prospect in experiment made on the living.
The knee joint that pliable pressure sensor array of the invention can lead to experimental subjects by lead is subcutaneous, and ties upIt is scheduled on FPC circuit board, single-chip microcontroller and wireless communication module outside knee joint to be connected, and signal is exported to the end PC, intoRow is as the result is shown.The silicon force sensing resistance item of heavy doping is when by extraneous pressure in pliable pressure sensor array of the inventionDeformation can be generated, internal stress will lead to resistivity and change, and so as to cause the change in resistance of silicon force sensing resistance item, pass through surveyThe change in resistance for measuring silicon force sensing resistance strip array can obtain extraneous pressure distribution.Therefore, when femur applies pressure to kneeWhen articular prosthesis surface, pliable pressure sensor array senses that ambient pressure changes, and generates corresponding signal, utilizes single-chip microcontrollerThe data signal acquisition process of pliable pressure sensor array is controlled, and signal collected is passed by FPC circuit boardIt is defeated.Signal, using wireless communication module, transmits a signal to the progress of the end PC after through being further processed of one-chip computer moduleIt collects and intuitive display.
In conclusion can be transported the present invention provides a kind of pliable pressure sensor array and using the component of the arrayFor in experiment made on the living, measuring for example personalized knee-joint prosthesis surface pressure distribution.Wherein using PI (polyimides) andThe good material of mechanical performances, the bio-compatibilities such as Parylene (Parylene), wraps array of pressure sensorsIt covers, guarantees its flexible and bio-compatibility, meet experiment made on the living condition.And the present invention utilizes MEMS processing technology, passes throughSOI piece is prepared into the monocrystalline silicon force sensing resistance strip array of heavy doping, measured to pressure by certain process.With it is existingTechnology is compared, and in order to meet the measurement request of knee joint pressure distribution, there is different lithography layouts, techniques to walk by the present inventionSuddenly, parameter and rapidoprint etc..Due to conducting polymer, polyester material Young's modulus much smaller than monocrystalline silicon resistor stripe withAnd PI material, so when in face of external larger pressure on an equal basis, the deformation quantity meeting of pliable pressure sensor array of the inventionSmaller, opposite hysteresis and measurable process performance can be more preferable, and furthermore its piezoresistance coefficient of the monocrystalline silicon resistor stripe of heavy doping is big, electricityResistance changing value is obvious, and accuracy also can be higher.Therefore, sensor of the invention is small in size, and long service life, measurable process is big,Measurement area, density are big, and the performances such as hysteresis are more preferable.Above-mentioned pliable pressure sensor array and use of the invention shouldThe size of the component of array is suitable for animal Beagle dog knee joint, and when being applied to different organisms, size can be according to needIt designs.
Finally, it should be noted that the above embodiments are merely illustrative of the technical solutions of the present invention, rather than its limitations;AlthoughPresent invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that: it still may be usedTo modify the technical solutions described in the foregoing embodiments or equivalent replacement of some of the technical features;And these are modified or replaceed, technical solution of various embodiments of the present invention that it does not separate the essence of the corresponding technical solution spirit andRange.

Claims (10)

Translated fromChinese
1.一种柔性压力传感器阵列的制备方法,其特征在于,包括以下步骤:1. a preparation method of a flexible pressure sensor array, is characterized in that, comprises the following steps:在SOI基片上通过光刻及刻蚀对硅电阻进行图形化;The silicon resistor is patterned by photolithography and etching on the SOI substrate;在光刻后的SOI基片上生长二氧化硅层,作为缓冲和保护层;A silicon dioxide layer is grown on the photolithographic SOI substrate as a buffer and protective layer;向二氧化硅层下图形化的硅电阻注入硼离子,并在两端位置进行重掺杂以形成硅电阻条的欧姆接触区;Implant boron ions into the silicon resistor patterned under the silicon dioxide layer, and perform heavy doping at both ends to form the ohmic contact region of the silicon resistor strip;通过光刻在每根硅电阻条的欧姆接触区上方打开电极窗口;Open electrode windows by photolithography over the ohmic contact region of each silicon resistor strip;溅射导电材料,在每根硅电阻条两端的欧姆接触区上制备接触电极,并制备与其中第一接触电极连接的下层引线;sputtering conductive materials, preparing contact electrodes on the ohmic contact regions at both ends of each silicon resistance strip, and preparing lower-layer leads connected to the first contact electrodes therein;生长聚对二甲苯介质层以覆盖电阻条;growing a parylene dielectric layer to cover the resistive strips;通过光刻和刻蚀在聚对二甲苯介质层上对应第二接触电极的区域制备引线孔;Prepare lead holes on the parylene dielectric layer corresponding to the region of the second contact electrode by photolithography and etching;溅射导电材料,并制备与第二接触电极连接的上层引线;sputtering the conductive material, and preparing the upper layer lead connected to the second contact electrode;在器件上表面旋涂聚酰亚胺,依次按温度梯度固化后形成第一聚酰亚胺包覆层;Spin-coating polyimide on the upper surface of the device, followed by curing according to a temperature gradient to form a first polyimide coating layer;在第一聚酰亚胺包覆层上通过临时键合胶进行上表面暂键合;Temporarily bonding the upper surface through temporary bonding glue on the first polyimide cladding layer;去除器件下方的SOI基片的埋氧层及衬底;Remove the buried oxide layer and the substrate of the SOI substrate below the device;在器件下表面旋涂聚酰亚胺,依次按温度梯度固化后在器件底面形成第二聚酰亚胺包覆层;Spin-coating polyimide on the lower surface of the device, followed by curing according to a temperature gradient, and forming a second polyimide coating layer on the bottom surface of the device;解除上表面暂键合,获得柔性压力传感器阵列。Release the temporary bonding on the upper surface to obtain a flexible pressure sensor array.2.根据权利要求1所述的柔性压力传感器阵列的制备方法,其特征在于,所述对硅电阻进行图形化后定义了多排硅电阻条,每排硅电阻条的第一接触电极通过平行的上层汇流条引出,每根硅电阻条的延伸方向一致且垂直于所连接的上层汇流条,每排硅电阻条的第二接触电极通过平行的下层汇流条引出,所述下层汇流条的延伸方向平行于所述硅电阻条。2 . The method for preparing a flexible pressure sensor array according to claim 1 , wherein the silicon resistors are patterned to define multiple rows of silicon resistor strips, and the first contact electrodes of each row of silicon resistor strips pass parallel to each other. 3 . The upper bus bars of each row are drawn out, the extension direction of each silicon resistor bar is consistent and perpendicular to the connected upper bus bars, the second contact electrodes of each row of silicon resistor bars are drawn out through the parallel lower bus bars, and the extension of the lower bus bars The direction is parallel to the silicon resistor strips.3.根据权利要求1所述的柔性压力传感器阵列的制备方法,其特征在于,所述制备方法中通过剪薄抛光工艺去除器件下方的SOI基片的埋氧层及硅衬底。3 . The preparation method of the flexible pressure sensor array according to claim 1 , wherein, in the preparation method, the buried oxide layer and the silicon substrate of the SOI substrate below the device are removed by a thinning polishing process. 4 .4.根据权利要求1所述的柔性压力传感器阵列的制备方法,其特征在于,所述制备方法中在旋涂聚酰亚胺后,依次按照以下温度梯度固化:4. The preparation method of the flexible pressure sensor array according to claim 1, characterized in that, in the preparation method, after spin-coating polyimide, curing is performed in sequence according to the following temperature gradient:第一阶段:在60~90℃下固化10-40min;The first stage: curing at 60-90℃ for 10-40min;第二阶段:在110~130℃下固化10-40min;The second stage: curing at 110-130℃ for 10-40min;第三阶段:在150-180℃下固化10-40min;The third stage: curing at 150-180℃ for 10-40min;第四阶段:在190~200℃下固化0-20min;The fourth stage: curing at 190-200℃ for 0-20min;第五阶段:在210~230℃下固化10-40min;The fifth stage: curing at 210-230℃ for 10-40min;第六阶段:在240~260℃下固化10-40min。The sixth stage: curing at 240 ~ 260 ℃ for 10-40min.5.根据权利要求1所述的柔性压力传感器阵列的制备方法,其特征在于,所述SOI基片包括五边形的阵列区和长方形的引线区;所述对硅电阻进行图形化后定义的多排硅电阻条位于阵列区,且每排硅电阻条的布置间隔相等。5. The method for preparing a flexible pressure sensor array according to claim 1, wherein the SOI substrate comprises a pentagonal array area and a rectangular lead area; Multiple rows of silicon resistor strips are located in the array area, and the arrangement interval of each row of silicon resistor strips is equal.6.根据权利要求1所述的柔性压力传感器阵列的制备方法,其特征在于,所述导电材料为Ti/Au。6 . The method for preparing a flexible pressure sensor array according to claim 1 , wherein the conductive material is Ti/Au. 7 .7.一种柔性压力传感器阵列,其特征在于,采用权利要求1-6中任一项所述的方法制备。7. A flexible pressure sensor array, characterized in that it is prepared by the method of any one of claims 1-6.8.根据权利要求7所述的柔性压力传感器阵列,其特征在于,用于膝关节、脊柱关节或髋关节的假体表面压力测量。8. The flexible pressure sensor array according to claim 7, characterized in that it is used for prosthetic surface pressure measurement of knee joints, spinal joints or hip joints.9.一种用于膝关节压力测量的组件,其特征在于,包括:9. An assembly for knee pressure measurement, comprising:膝关节假体,所述膝关节假体包括股骨假体、胫骨假体和安装于所述胫骨假体上方的垫片,所述垫片的上表面开设有片形槽;a knee joint prosthesis, the knee joint prosthesis comprises a femoral prosthesis, a tibial prosthesis and a spacer installed above the tibial prosthesis, and a sheet-shaped groove is formed on the upper surface of the spacer;根据权利要求1-6中任一项所述的方法制备的柔性压力传感器阵列,设置于所述垫片的片形槽内。The flexible pressure sensor array prepared by the method according to any one of claims 1-6 is arranged in the sheet-shaped groove of the gasket.10.根据权利要求9所述的用于膝关节压力测量的组件,其特征在于,所述片形槽包括:内侧髁槽和外侧髁槽;以及从内侧髁槽和外侧髁槽分别向两侧延伸的走线槽。10. The assembly for knee pressure measurement according to claim 9, wherein the sheet-shaped groove comprises: a medial condyle groove and a lateral condyle groove; and from the medial condyle groove and the lateral condyle groove to two sides respectively Extended wireway.
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