CN109346430B - Display device and method of manufacturing the same - Google Patents

Abstract

Translated fromChinese

本发明提供显示设备及其制造方法。显示设备的制造方法包括下列步骤。提供数组基板。数组基板包括多个次像素区，每一次像素区包括第一与第二组件区。进行第一转置制程，以藉由第一载体将N个第一发光组件分别放置于N个次像素区中的第一组件区。进行第二转置制程，以藉由第二载体将X个第二发光组件分别放置于X个次像素区中的第二组件区。进行第三转置制程，以藉由第三载体将Y个第二发光组件分别放置于Y个次像素区中的第二组件区。X个次像素区与Y个次像素区不重叠，且N个次像素区分别与X个次像素区以及Y个次像素区部分重叠。

The present invention provides a display device and a manufacturing method thereof. The manufacturing method of the display device includes the following steps. Array substrates are provided. The array substrate includes a plurality of sub-pixel regions, and each sub-pixel region includes first and second component regions. A first transposition process is performed, so that the N first light-emitting elements are respectively placed in the first element regions in the N sub-pixel regions through the first carrier. A second transposition process is performed, so that the X second light-emitting elements are respectively placed in the second element regions in the X sub-pixel regions through the second carrier. A third transposition process is performed, so that the Y second light-emitting elements are respectively placed in the second element regions in the Y sub-pixel regions through the third carrier. The X sub-pixel regions and the Y sub-pixel regions do not overlap, and the N sub-pixel regions respectively partially overlap with the X sub-pixel regions and the Y sub-pixel regions.

Description

Display device and method of manufacturing the same

Technical Field

The present invention relates to a display device and a method for manufacturing the same, and more particularly, to a light emitting diode display device and a method for manufacturing the same.

Background

The light emitting diode has the advantages of high energy conversion efficiency, short reaction time, long service life and the like. Therefore, in recent years, the light emitting diode has become a main illumination light source with the characteristics of power saving and environmental protection. Furthermore, due to the breakthrough in the manufacturing size of the light emitting diode, a micro LED display (micro LED display) technology that directly places the light emitting diode in the pixel structure is gradually appearing in the market.

The method for transferring the light emitting diodes from the wafer to the array substrate may include stamp transferring (stamp imparting) or electrostatic transferring (electrostatic imparting). Generally, a plurality of transposing steps are required to arrange the light emitting diodes in all the pixels (sub-pixels). The present transposing process includes shifting the transposing area of each transposing step by an offset amount along the row direction or the column direction compared with the transposing area of the previous transposing step. The current method is difficult to fix the offset based on the error caused by the transpose device/process. As a result, the display device may have a defect of stripe-shaped color mura or luminance mura extending in the column direction and/or the row direction.

Disclosure of Invention

The invention provides a display device and a manufacturing method thereof, which can avoid the defect of uneven color/brightness of a strip shape extending along the column direction and/or the row direction.

The manufacturing method of the display device of the embodiment of the invention comprises the following steps: providing an array substrate, wherein the array substrate comprises a plurality of sub-pixel areas, and each sub-pixel area comprises a first component area and a second component area; carrying out a first transfer process, and respectively placing the N first light-emitting components in first component areas in the N sub-pixel areas of the array substrate by using a first carrier; performing a second transposition process, and respectively placing the X second light-emitting assemblies in second assembly areas in the X sub-pixel areas of the array substrate by using a second carrier; and performing a third transposition process to place the Y second light-emitting components in the second component areas of the Y sub-pixel areas of the array substrate by a third carrier. The X sub-pixel regions are not overlapped with the Y sub-pixel regions, and the N sub-pixel regions are respectively partially overlapped with the X sub-pixel regions and the Y sub-pixel regions.

In some embodiments, the second carrier and the third carrier may have different shapes and/or areas.

In some embodiments, the second carrier and the third carrier may have the same shape and area as each other, but may respectively carry different numbers of second light emitting elements.

In some embodiments, the first carrier, the second carrier, and the third carrier may be a polymer stamp or an electrostatic chuck, respectively.

In some embodiments, the light emission spectra of the first and second light emitting elements may be substantially the same as each other.

In some embodiments, the method for manufacturing a display device further includes: and performing a fourth transposition process, and respectively placing the Z second light-emitting assemblies in the second assembly areas in the Z sub-pixel areas of the array substrate by using a fourth carrier. The X sub-pixel areas, the Y sub-pixel areas and the Z sub-pixel areas are not overlapped, and the N sub-pixel areas and the Z sub-pixel areas are partially overlapped.

In some embodiments, the light emission spectra of the first and second light emitting elements may be different from each other.

The display device comprises an array substrate, a plurality of first light-emitting assemblies and a plurality of second light-emitting assemblies. The array substrate comprises a plurality of sub-pixel areas. The sub-pixel regions are arranged in an array along a first direction and a second direction, and each sub-pixel region comprises a first component region and a second component region which are arranged along the first direction. The plurality of first light-emitting components are respectively arranged in the first component areas in the sub-pixel areas. The plurality of second light-emitting components are respectively arranged in the second component areas in the sub-pixel areas. In the sub-pixel regions arranged along the first direction, the adjacent first light emitting elements and second light emitting elements in any one of the sub-pixel regions have a first offset in the second direction. Further, in the sub-pixel regions arranged in the first direction, the first offset amount has at least three kinds of values.

In some embodiments, in the sub-pixel regions arranged along the first direction, the first light emitting elements and the second light emitting elements of at least two sub-pixel regions may have the same first offset.

In some embodiments, the absolute value of the first offset may be greater than 0um and less than or equal to 3 μm.

In some embodiments, in the sub-pixel regions arranged along the second direction, the adjacent first light emitting elements in any two adjacent sub-pixel regions may have a second offset amount in the first direction with respect to each other, and the second offset amount in the sub-pixel regions arranged along the second direction may have more than three values.

In some embodiments, in the sub-pixel regions arranged along the second direction, at least two of the sub-pixel regions may have the same second offset.

In some embodiments, the absolute value of the second offset may be greater than 0 μm and less than or equal to 3 μm.

In some embodiments, the first light emitting element and the second light emitting element can be light emitting diodes having substantially the same light emitting spectrum.

In some embodiments, the first light emitting element and the second light emitting element can be light emitting diodes having different light emitting spectrums.

In some embodiments, the length/width of the first and second light emitting elements may be 5 μm to 30 μm.

Based on the above, compared with the way that the transposing areas of each transposing step are shifted by an offset amount along the row direction or the column direction compared with the transposing area of the previous transposing step, the light emitting elements are placed on the array substrate, the transposing area of the first transposing process is partially overlapped with the transposing areas of the second transposing process to the third transposing process (or the second transposing process to the fourth transposing process) that are performed subsequently, and the transposing areas of the second transposing process to the third transposing process (or the second transposing process to the fourth transposing process) are not overlapped with each other. In other words, the transposing regions of the first transposing process to the third transposing process (or the first transposing process to the fourth transposing process) in the embodiments of the invention are not sequentially shifted along the row direction or the column direction. In this way, in the plurality of sub-pixel regions arranged along the column direction or the row direction, the offset of the first light emitting element and the second light emitting element in the sub-pixel regions in the column direction or the row direction may have two or more values or three or more values. Therefore, under the limited and large random offset variation, the display device of the embodiment of the invention can eliminate the directionality of the defect of uneven chromaticity or uneven brightness in the display device, i.e. can avoid the defect of uneven chromaticity or uneven brightness of the strip shape extending along the column direction and/or the row direction.

The invention is described in detail below with reference to the drawings and specific examples, but the invention is not limited thereto.

Drawings

Fig. 1 is a flow chart of a method of manufacturing a display device according to some embodiments of the invention.

Fig. 2A and 2B are top views of different stages of a transposing process of a method of manufacturing a display device according to some embodiments of the present invention.

Fig. 3A and 3B are top views of transposing regions of a first transposing process and a second transposing process of a method for manufacturing a display apparatus according to other embodiments of the invention.

Wherein the reference numerals

10. 20: display device

100: array substrate

D1: a first direction

D2: second direction

DR 1: first component region

DR 2: second component region

F1, F2, F3, F4, F5, F6: offset amount

L: length of

LD 1: first light emitting assembly

LD2, LD3, LD 4: second light emitting component

P: pixel region

S100, S102, S104, S106, S108: step (ii) of

SP: sub-pixel region

TR1, TR1 a: first transposition area

TR2, TR2 a: second transposition area

TR 3: third transposition area

TR 4: a fourth transpose area

W: width of

Detailed Description

The following detailed description of the embodiments of the present invention with reference to the drawings and specific examples is provided for further understanding the objects, aspects and effects of the present invention, but not for limiting the scope of the appended claims.

Fig. 1 is a flow chart of a method of manufacturing a display device according to some embodiments of the invention. Fig. 2A and 2B are top views of different stages of a transposing process of a method of manufacturing a display device according to some embodiments of the present invention. The method for manufacturing the display device of the embodiment of the invention comprises the following steps.

Referring to fig. 1 and fig. 2A, step S100 is performed to provide anarray substrate 100. The material of thearray substrate 100 may include glass, quartz, organic polymers, opaque/reflective materials (e.g., conductive materials, metals, wafers, ceramics, or other suitable materials) or other suitable materials. If a conductive material or metal is used, an insulating layer may be formed on thearray substrate 100 to prevent short circuit. Thearray substrate 100 includes a plurality of pixel regions P. The plurality of pixel regions P are arranged along the first direction D1 and the second direction D2. Each pixel region P includes a plurality of sub-pixel regions SP (e.g., 3 sub-pixel regions SP). In some embodiments, the plurality of sub-pixel regions SP within each pixel region P may be arranged along the second direction D2. However, one skilled in the art can adjust the number and arrangement of the sub-pixel regions SP in each pixel region P according to design requirements, and the invention is not limited thereto. Each sub-pixel region SP includes a first component region DR1 and a secondcomponent region DR 2. In some embodiments, the first and second component regions DR1 and DR2 in each sub-pixel region SP may be arranged along the first direction D1. In the subsequent steps, one or more light emitting devices may be disposed in the first device region DR1 and the second device region DR2, respectively. In addition, each sub-pixel region SP may further include a pixel driving element (not shown) for driving the light emitting element in each sub-pixel region SP.

In step S102, a first transfer process is performed to transfer N light emitting devices from a first wafer (not shown) to a first transfer region TR1 of thearray substrate 100 by a first carrier (not shown). In some embodiments, the N light emitting devices can be directly transferred from a first wafer (not shown) to thearray substrate 100. In other embodiments, the N light emitting devices may be transferred from the first wafer onto another temporary substrate (not shown), and then transferred onto thearray substrate 100 by a first transfer process. In some embodiments, a plurality of light emitting elements may be formed on the first wafer by epitaxial growth (epitaxial growth). Wafer as used herein means a semiconductor wafer or any substrate formed with electronic components. The plurality of light emitting elements formed on the first wafer have substantially the same light emitting spectrum. Each light emitting element may be a light emitting diode, such as a micro light emitting diode (micro LED). In some embodiments, the size (i.e., length or width) of the light emitting element can be 5 μm to 30 μm. The light emitting devices may be arranged in a first set of a plurality of light emitting devices on thearray substrate 100 by, for example, stamp transferring (static imprinting), electrostatic transferring (electrostatic imprinting), or other transferring methods. The first set of light emitting assemblies includes N light emitting assemblies, and is referred to herein as N first light emitting assemblies LD 1. The N first light emitting components LD1 are placed within the first transfer region TR 1. The N first light emitting modules LD1 may be disposed in the N sub-pixel regions SP having the same light emitting spectrum in the first transpose region TR1, so that adjacent first light emitting modules LD1 in the first transpose region TR1 have substantially the same interval therebetween. In some embodiments, N first light emitting modules LD1 may be disposed in the first module region DR1 of the N sub-pixel regions SP in the first transfer region TR 1.

In some embodiments, the length L of the first transition region TR1 in the first direction D1 may be 0.5cm to 15 cm. The width W of the first transition region TR1 in the second direction D2 may be 0.5cm to 15 cm. Further, the outline of the first transposed area TR1 may be rectangular. However, one skilled in the art may adjust the size and the profile of the first transfer region TR1 according to the process requirements, and the invention is not limited thereto. In some embodiments, the area of the first transpose region TR1 may be substantially equal to the area of the first carrier. Furthermore, the contour of the first transfer region TR1 may also substantially overlap the contour of the first carrier. In this way, the distribution range of the N first light emitting elements LD1 carried by the first carrier may substantially overlap the outline of the first carrier. In other embodiments, the area of the first transpose region TR1 may be smaller than the area of the first carrier, so that the distribution range of the N first light emitting assemblies LD1 carried by the first carrier may be located inside the outline of the first carrier.

Referring to fig. 1 and fig. 2B, step S104 is performed to perform a second transposing process for transposing the X light emitting devices from the first wafer into a second transposing area TR2 of thearray substrate 100 through a second carrier (not shown). The second transferring process is similar to the first transferring process, but the second transferring process places a second set of the plurality of light emitting devices into the second transferring region TR2 of thearray substrate 100 through the second carrier. The second set of the plurality of light emitting assemblies includes X light emitting assemblies and is referred to herein as X second light emittingassemblies LD 2. The first set and the second set of the plurality of light emitting elements do not intersect, i.e. the X second light emitting elements LD2 are not equal to the N first light emitting elements LD1, but have substantially the same light emitting spectra. In some embodiments, the area of the second transpose region TR2 may be substantially equal to the area of the second carrier. Furthermore, the contour of the second transpose region TR2 may also substantially overlap with the contour of the second carrier. In this way, the distribution range of the X second light emitting elements LD2 carried by the second carrier may substantially overlap the outline of the second carrier. In other embodiments, the area of the second transpose region TR2 may be smaller than the area of the second carrier, so that the distribution range of the X second light-emitting assemblies LD2 carried by the second carrier may be located inside the outline of the second carrier. On the other hand, similar to the first carrier, the second carrier may also be a polymer stamp or an electrostatic chuck.

The X second light emitting modules LD2 may be disposed in the second module region DR2 of the X sub-pixel regions SP in the above-described secondtransposed region TR 2. The first transposed area TR1 partially overlaps with the second transposedarea TR 2. In other words, the first transposed region TR1 may have boundaries of the second transposed region TR2 therein, and vice versa. Further, the N sub-pixel areas SP in the first transposition area TR1 partially overlap with the X sub-pixel areas in the secondtransposition area TR 2. In some embodiments, the profile and/or area of the first transpose region TR1 may be different than the profile and/or area of the secondtranspose region TR 2. In some embodiments, the overlapping area of the first transpose region TR1 and the second transpose region TR2 may cover at least two sub-pixel regions SP having the same emission spectrum. In the overlapping area of the first transpose area TR1 and the second transpose area TR2, the first light emitting device LD1 and the second light emitting device LD2 are respectively disposed in the first device area DR1 and the second device area DR2 of the same set of sub-pixel areas SP having the same light emission spectrum. Within an overlapping area of the first and second transpose regions TR1 and TR2, the first and second light emitting modules LD1 and LD2 of each of the same set of sub-pixels SP may have an offset F1 in the first direction D1 and an offset F2 in the second direction D2. In some embodiments, the offset F1 and the offset F2 may be greater than 0 μm and less than or equal to 3 μm, respectively.

In other embodiments, the method of performing the second transposing process may also include transposing X light emitting devices from a second wafer (not shown) into the second transposing region TR2 of thearray substrate 100 by a second carrier. In some embodiments, a plurality of light emitting elements may be formed on the second wafer by epitaxial growth. The plurality of light emitting elements formed on the second wafer are similar to the light emitting elements formed on the first wafer, except that the emission spectra are different from each other. For example, the light emitting devices formed on the second wafer may be red light emitting diodes, and the light emitting devices formed on the first wafer may be blue light emitting diodes, green light emitting diodes, uv light emitting diodes, yellow light emitting diodes, or white light emitting diodes. After forming a plurality of light emitting devices on the second wafer, a subset of the plurality of light emitting devices on the second wafer may be directly transferred onto thearray substrate 100, or indirectly transferred onto thearray substrate 100 via another temporary substrate (not shown). The subset of the plurality of light emitting assemblies includes X light emitting assemblies and is referred to herein as X second light emittingassemblies LD 2. Therefore, in the embodiments, the light emission spectrum of the X second light emitting elements LD2 is different from the light emission spectrum of the N first light emitting elements LD 1. In addition, in the overlapping area of the first transfer region TR1 and the second transfer region TR2, the sub-pixel region SP may have at least two light emitting elements whose light emitting frequencies are different from each other.

In step S106, a third transferring process is performed to transfer the Y light emitting elements from the first wafer to a third transferring area TR3 of thearray substrate 100 through a third carrier (not shown). The third transposing process is similar to the first transposing process, but the third transposing process places a third set of the plurality of light emitting devices derived from the first wafer in the third transposing region TR3 of thearray substrate 100 through a third carrier. The third set of the plurality of light emitting assemblies includes Y light emitting assemblies and is referred to herein as Y second light emitting assemblies LD 3. The first set and the third set of the plurality of light emitting elements do not intersect, i.e. the Y second light emitting elements LD3 are not equal to the N first light emitting elements LD1, but have substantially the same light emitting spectra. In some embodiments, the area of the third transpose region TR3 may be substantially equal to the area of the third carrier. Furthermore, the contour of the third transpose region TR3 may also substantially overlap with the contour of the third carrier. In this way, the distribution range of the Y second light emitting elements LD3 carried by the third carrier may substantially overlap the outline of the third carrier. In other embodiments, the area of the third transpose region TR3 may be smaller than that of the third carrier, so that the distribution range of the Y second light-emitting assemblies LD3 carried by the third carrier may be located inside the outline of the third carrier. On the other hand, similar to the second carrier, the third carrier may also be a polymer stamp or an electrostatic chuck. In some embodiments, the second carrier and the third carrier have different shapes and/or areas. In other embodiments, the second carrier and the third carrier have the same shape and area, but are respectively transposed with different numbers of light emitting components.

Y second light emitting modules LD3 may be disposed in the second module region DR2 of the Y sub-pixel regions SP having the same light emission spectrum within the third transposed region TR 3. The first transposition area TR1 partially overlaps with the third transposition area TR3, and the second transposition area TR2 does not overlap with the third transposition area TR 3. In other words, the first transposed area TR1 may have boundaries of the third transposed area TR3 therein, and vice versa. Further, the second transposed area TR2 has no boundary of the third transposed area TR3 therein, and the third transposed area TR3 has no boundary of the second transposed area TR2 therein. From this, it can be seen that the N sub-pixel areas SP in the first transposed area TR1 partially overlap with the Y sub-pixel areas in the third transposed area TR 3. Further, the X sub-pixel areas in the second transposed area TR2 do not overlap with the Y sub-pixel areas in the third transposed area TR 3. In some embodiments, the profile and/or area of the first transpose region TR1 may be different from the profile and/or area of the third transpose region TR 3. In some embodiments, the overlapping area of the first transposed area TR1 and the third transposed area TR3 may cover at least two sub-pixel areas SP having the same light emission spectrum. In the overlapping area of the first transpose area TR1 and the third transpose area TR3, the first light emitting device LD1 and the second light emitting device LD3 are respectively disposed in the first device area DR1 and the second device area DR2 of the same set of sub-pixel areas SP having the same light emission spectrum. In the overlapping area of the first transpose area TR1 and the third transpose area TR3, the first light emitting module LD1 and the second light emitting module LD2 of each of the same group of sub-pixels SP may have an offset F3 and an offset F4 in the first direction D1 and the second direction D2, respectively. In some embodiments, the offset F3 and the offset F4 may be greater than 0 μm and less than or equal to 3 μm, respectively.

In other embodiments, the method of performing the third transposing process may also include transposing Y light emitting elements from a third wafer (not shown) into the third transposing area TR3 of thearray substrate 100 by a third carrier. In some embodiments, a plurality of light emitting elements may be formed on the third wafer by epitaxial growth. The plurality of light emitting elements formed on the third wafer are similar to the light emitting elements formed on the first wafer, except that the emission spectra are different from each other. In addition, the light emitting components formed on the third wafer may have emission spectra substantially the same as or different from the emission spectra of the light emitting components formed on the second wafer. After forming a plurality of light emitting devices on the third wafer, a subset of the plurality of light emitting devices on the third wafer may be directly placed on thearray substrate 100, or may be first transposed on another temporary substrate (not shown), and then placed in the third transposing region TR3 of thearray substrate 100 by a third transposing process. The subset of the plurality of light emitting elements on the third wafer includes Y light emitting elements and is referred to herein as Y second light emitting elements LD 3. Therefore, in the embodiments, the light emission spectrum of the Y second light emitting elements LD3 is different from the light emission spectrum of the N first light emitting elements LD 1. Further, the sub-pixel region SP within the overlapping region of the first transposing region TR1 and the third transposing region TR3 may have at least two light emitting elements whose light emitting frequencies are different from each other.

In some embodiments, the step S108 may be further performed to perform a fourth transpose process. The fourth transposing process is similar to the third transposing process in step S106, and only the differences between the two processes are described herein, and the descriptions of the same or similar parts are omitted. In the fourth transposing process, Z light-emitting devices from the first wafer (or from another fourth wafer) are transposed into the fourth transposing region TR4 of thearray substrate 100 through a fourth carrier (not shown). A fourth set of light emitting devices of the first wafer (or a subset of light emitting devices of the fourth wafer) includes Z light emitting devices, and is referred to herein as Z second light emitting devices LD 4. The first set and the fourth set of the plurality of light emitting elements of the first wafer do not have an intersection, that is, the Z second light emitting elements LD4 are not equal to the N first light emitting elements LD1, but may have substantially the same light emitting spectra. In some embodiments, the emission spectrum of the Z second light emitting elements LD4 from the fourth wafer is different from the emission spectrum of the N first light emitting elements LD 1. In some embodiments, the second carrier, the third carrier and the fourth carrier have different shapes and/or areas. In other embodiments, any two of the second carrier, the third carrier, and the fourth carrier have the same shape and area, but carry different numbers of light emitting elements.

The Z second light emitting modules LD4 may be disposed in the second module region DR2 of the Z sub-pixel regions SP having the same light emission spectrum in the fourth transpose region TR 4. The first transposition area TR1 partially overlaps with the fourth transposition area TR4, and the fourth transposition area TR4 does not overlap with the second transposition area TR2 and the third transposition area TR 3. In other words, the first transpose region TR1 may have boundaries of the fourth transpose region TR4 therein, and vice versa. Further, the second transposition area TR2 does not have a boundary of the fourth transposition area TR4 within the third transposition area TR3, and the fourth transposition area TR4 does not have a boundary of the second transposition area TR2 and the third transposition area TR3 within the fourth transposition area TR 4. From this, it can be seen that the N sub-pixel areas SP in the first transpose area TR1 partially overlap the Z sub-pixel areas SP in the fourth transpose area TR 4. Further, the X sub-pixel areas SP in the second transpose area TR2, the Y sub-pixel areas SP in the third transpose area TR3, and the Z sub-pixel areas SP in the fourth transpose area TR4 do not overlap. In some embodiments, the profile and/or area of the first transpose region TR1 may be different from the profile and/or area of the fourth transpose region TR 4. In some embodiments, the overlapping area of the first transpose region TR1 and the fourth transpose region TR4 may cover at least two sub-pixel regions SP having the same light emission spectrum. In the overlapping area of the first transpose area TR1 and the fourth transpose area TR4, the first light emitting device LD1 and the second light emitting device LD4 are respectively disposed in the first device area DR1 and the second device area DR2 of the same set of sub-pixel areas SP having the same light emission spectrum. Within an overlapping area of the first transpose area TR1 and the third transpose area TR3, the first light emitting module LD1 and the second light emitting module LD4 of each of the same group of subpixels SP may have an offset F5 in the first direction D1 and an offset F6 in the second direction D2. In some embodiments, the offset F5 and the offset F6 may be greater than 0 μm and less than or equal to 3 μm, respectively.

Those skilled in the art can perform other transposing processes similar to the second transposing process, the third transposing process and the fourth transposing process according to the process requirements, so that the offset between the adjacent first light-emitting device LD1 and the second light-emitting device LD4 (i.e., the second light-emitting device LD2, the second light-emitting device LD3 or the second light-emitting device LD4) in the array substrate has more different values. In addition, in some embodiments, the steps S102 to S108 may be repeated, so that the first light emitting device LD1 and the second light emitting device (i.e., the second light emitting device LD2, the second light emitting device LD3 or the second light emitting device LD4) are respectively disposed in the first device region DR1 and the second device region DR2 of each group of the sub-pixel regions SP having the same light emitting spectrum of thearray substrate 100. In some embodiments, the plurality of first transition regions TR1 may not overlap each other, and the shapes of the plurality of first transition regions TR1 may be the same or different from each other. In addition, the areas of the plurality of first transfer regions TR1 and the number of the included first light emitting modules LD1 may be the same or different from each other. In other embodiments, adjacent first transition regions TR1 may partially overlap. In such embodiments, there may be an inter-sub-pixel offset (not shown) in the first direction D1 and/or the second direction D2 between the first light emitting elements LD1 of the adjacent sub-pixel regions SP that partially overlap each other. In addition, the inter-subpixel offsets in the subpixels SP arranged in the first direction D1 or the second direction D2 may have at least three or more values. In some embodiments, the overlapping area of the adjacent first transposed region TR1 may cover at least two sub-pixel regions SP. In this way, at least two of the sub-pixels arranged along the second direction D2 may have the same inter-sub-pixel offset. For example, the absolute value of the respective inter-sub-pixel offsets in the first direction D1 and the second direction D2 may be greater than 0 μm and less than or equal to 3 μm.

Thus, the manufacturing of the display device of the embodiment of the present invention has been completed. Ideally, the offset between the first light emitting element LD1 and the second light emitting element (i.e., the second light emitting element LD2, the second light emitting element LD3 or the second light emitting element LD4) in the sub-pixel region SP in the second direction D2 should be substantially zero, and the offsets in the first direction D1 should be the same as each other. However, the offset in the second direction D2 may not be zero and the offset in the first direction D1 may be different from each other based on the error caused by the transpose apparatus/process. Compared with the method of placing a plurality of light emitting elements on an array substrate in a manner that the transposing area of each transposing step is shifted by an offset amount along the row direction (the second direction D2) or the column direction (the first direction D1) compared with the transposing area of the previous transposing step, the embodiment of the invention enables the transposing area of the first transposing process to partially overlap with the transposing area of the second transposing process to the third transposing process (or the second transposing process to the fourth transposing process) to be performed subsequently, and enables the transposing areas of the second transposing process to the third transposing process (or the second transposing process to the fourth transposing process) to not overlap with each other. In other words, the transposing regions of the first transposing process to the third transposing process (or the first transposing process to the fourth transposing process) of the embodiment of the invention are not sequentially shifted along the row direction (the second direction D2) or the column direction (the first direction D1). In this way, within the range of the first transition region TR1, the offset between the first light emitting device LD1 and the second light emitting device LD2, the second light emitting device LD3 or the second light emitting device LD4 in the sub-pixel region SP in the column direction (the second direction D2) or the row direction (the first direction D1) may have two or more values or three values. Therefore, under the limited and large variance variation, the display device of the embodiment of the invention can eliminate the directionality of the defect such as color mura or luminance mura, i.e. can avoid the generation of the strip-shaped color mura or luminance mura extending along the column direction (the second direction D2) and/or the row direction (the first direction D1).

Next, the structure of thedisplay device 10 of the embodiment of the present invention will be explained with reference to fig. 2B.

Referring to fig. 2B, thedisplay device 10 according to the embodiment of the invention includes anarray substrate 100. Thearray substrate 100 includes a plurality of sub-pixel regions SP. A plurality of timesThe pixel regions SP are arranged in an array along a first direction D1 and a second direction D2. Each of the plurality of sub-pixel regions SP includes a first device region DR1 and a second device region DR2 arranged along a first direction D1. Thedisplay device 10 further includes a plurality of first light emitting elements LD1 and a plurality of second light emitting elements LD2, LD3 and LD 4. The first light emitting elements LD1 are respectively disposed in the first element regions DR1 of the sub-pixel regions SP. The plurality of second light emitting elements (i.e., the second light emitting element LD2, the second light emitting element LD3, and the second light emitting element LD4) are respectively disposed in the plurality of second element regions DR2 of the plurality of sub-pixel regions SP. In the plurality of sub-pixel regions SP arranged along the first direction D1, the first light emitting module LD1 and the second light emitting module (i.e., the second light emitting module LD2, the second light emitting module LD3, and the second light emitting module LD4) adjacent to any one of the sub-pixel regions SP have a first offset in the second direction D2. In addition, the first offset has at least three values (e.g., offset F2, offset F4, and offset F6) in the plurality of sub-pixel regions arranged along the first direction D1. In some embodiments, in the region of the first transfer region TR1 (e.g., in the area range of 0.0025 cm)²To 225cm²) The first offset has at least three values (e.g., offset F2, offset F4, and offset F6).

In some embodiments, in the sub-pixel regions SP arranged along the first direction D1, the first light emitting module LD1 and the second light emitting module (i.e., the second light emitting module LD2, the second light emitting module LD3, or the second light emitting module LD4) of at least two sub-pixel regions SP have the same first offset therebetween. In some embodiments, the absolute value of the first offset amount is greater than 0 μm and less than or equal to 3 μm. In some embodiments, among the plurality of sub-pixel regions SP arranged along the second direction D2, the adjacent first light emitting elements LD1 of any two adjacent sub-pixel regions SP have a second offset (i.e., an inter-sub-pixel offset) in the first direction D1. Further, the second offset amount has at least three values in the plurality of sub-pixel regions arranged in the second direction D2. In some embodiments, the above-mentioned second offsets of the at least two sub-pixel regions SP arranged along the second direction D2 are the same as each other. In some embodiments, the absolute value of the second offset amount is greater than 0 μm and less than or equal to 3 μm. In some embodiments, the first light emitting module LD1 and the second light emitting module (the second light emitting module LD2, the second light emitting module LD3 and the second light emitting module LD4) are light emitting diodes having substantially the same light emitting spectrum. In some embodiments, the first light emitting module LD1 and the second light emitting module (the second light emitting module LD2, the second light emitting module LD3 and the second light emitting module LD4) are light emitting diodes having different light emitting spectrums. In some embodiments, the first light emitting module LD1 and the second light emitting module (the second light emitting module LD2, the second light emitting module LD3, and the second light emitting module LD4) have a length/width of 5 μm to 30 μm, respectively.

Fig. 3A and 3B are top views of transpose regions of a first transpose process and a second transpose process of a method for manufacturing adisplay apparatus 20 according to other embodiments of the invention. The manufacturing method of thedisplay device 20 is similar to the manufacturing method of thedisplay device 10 shown in fig. 2A and 2B, and only the differences between the two are described below, and the same or similar parts are not repeated.

Referring to fig. 3A, a first transfer process is performed to transfer N light emitting devices from a first wafer to a first transfer region TR1a of thearray substrate 100 through a first carrier. For simplicity, fig. 3A only shows thearray substrate 100 and the first transfer region TR1 a. In some embodiments, the first transferring process may be performed a plurality of times, such that the distribution range of the first transferring regions TR1a covers theentire array substrate 100. In the present embodiment, the shapes of the plurality of first transpose regions TR1a may be different from each other, and are respectively arbitrary polygons other than rectangles. In this way, the extending directions of the boundaries of the first transpose regions TR1a can be staggered with each other. Therefore, the defect of stripe-shaped uneven chromaticity or uneven brightness extending in the column direction (the second direction D2) or the row direction (the first direction D1) that may be generated between the adjacent first transpose areas TR1a can be further eliminated.

Referring to fig. 3B, a second transposing process is performed to transpose X light emitting devices from the first wafer (or the second wafer) into the second transposing area TR2a of thearray substrate 100 through a second carrier (not shown). In some embodiments, the second transposing process may be performed a plurality of times, so that the distribution range of the plurality of second transposing regions TR2a covers theentire array substrate 100. The second transposed area TR2a partially overlaps the first transposed area TR1a, and the plurality of second transposed areas TR2a do not overlap each other. In other words, each first transpose region TR1a may have at least one boundary of the second transpose region TR2 therein, or each second transpose region TR2a may have at least one boundary of the first transpose region TR1a therein. Similar to the first transpose region TR1a, the shapes of the plurality of second transpose regions TR2a may be different from each other and respectively be arbitrary polygons other than rectangles. In this way, the extending directions of the boundaries of the second transpose regions TR2a can be staggered with each other. Therefore, the defect of stripe-shaped uneven chromaticity or uneven brightness extending in the column direction (the second direction D2) or the row direction (the first direction D1) that may be generated between the adjacent second transpose areas TR2a can be further eliminated. In some embodiments, the extending direction of the boundary of the second transposed area TR2 may be staggered with the extending direction of the boundary of the first transposed area TR 1. Therefore, the directionality of the defect of chromaticity unevenness or luminance unevenness can be further eliminated, that is, the chromaticity uniformity and the luminance uniformity of thedisplay device 20 can be improved.

In summary, compared with the way that the transposing areas of each transposing step are shifted by an offset amount along the row direction or the column direction from the transposing area of the previous transposing step, the light emitting elements are placed on the array substrate, the transposing area of the first transposing process is partially overlapped with the transposing area of the second transposing process to the third transposing process (or the second transposing process to the fourth transposing process) performed subsequently, and the transposing areas of the second transposing process to the third transposing process (or the second transposing process to the fourth transposing process) are not overlapped with each other. In other words, the transposing regions of the first transposing process to the third transposing process (or the first transposing process to the fourth transposing process) in the embodiments of the invention are not sequentially shifted along the row direction or the column direction. In this way, in the plurality of sub-pixel regions arranged along the column direction or the row direction, the offset of the first light emitting element and the second light emitting element in the sub-pixel regions in the column direction or the row direction may have two or more values or three or more values. Therefore, the display device of the embodiment of the invention can eliminate the directionality of the defect of uneven chromaticity or uneven brightness in the display device, i.e. can avoid the defect of uneven chromaticity or uneven brightness in a strip shape extending along the column direction and/or the row direction.

The present invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof, and it should be understood that various changes and modifications can be effected therein by one skilled in the art without departing from the spirit and scope of the invention as defined in the appended claims.

Claims (16)

Translated fromChinese

1.一种显示设备的制造方法，其特征在于，包括：1. A method for manufacturing a display device, comprising:提供一数组基板，其中该数组基板包括多个次像素区，该些次像素区的每一者包括一第一组件区与一第二组件区；providing an array substrate, wherein the array substrate includes a plurality of sub-pixel regions, each of the sub-pixel regions includes a first component region and a second component region;进行一第一转置制程，藉由一第一载体将N个第一发光组件分别放置于该数组基板的N个次像素区中的该些第一组件区；performing a first transposition process, and placing N first light-emitting elements in the first element regions in the N sub-pixel regions of the array substrate respectively by a first carrier;进行一第二转置制程，藉由一第二载体将X个第二发光组件分别放置于该数组基板的X个次像素区中的该些第二组件区；以及performing a second transposition process, and placing X second light-emitting elements in the second element regions in the X sub-pixel regions of the array substrate respectively by means of a second carrier; and进行一第三转置制程，藉由一第三载体将Y个第二发光组件分别放置于该数组基板的Y个次像素区中的该些第二组件区，其中该X个次像素区与该Y个次像素区不重叠，且该N个次像素区分别与该X个次像素区以及该Y个次像素区部分重叠，其中，X、Y为大于等于1的整数，N为大于等于2的整数。A third transposition process is performed, and Y second light-emitting components are respectively placed in the second component regions in the Y sub-pixel regions of the array substrate by a third carrier, wherein the X sub-pixel regions and The Y sub-pixel regions do not overlap, and the N sub-pixel regions respectively partially overlap the X sub-pixel regions and the Y sub-pixel regions, wherein X and Y are integers greater than or equal to 1, and N is greater than or equal to An integer of 2.2.如权利要求1所述的显示设备的制造方法，其特征在于，该第二载体与该第三载体具有不同的形状及/或面积。2 . The manufacturing method of a display device as claimed in claim 1 , wherein the second carrier and the third carrier have different shapes and/or areas. 3 .3.如权利要求1所述的显示设备的制造方法，其特征在于，该第二载体与该第三载体的形状与面积相同，但分别承载不同数量的该些第二发光组件。3 . The manufacturing method of the display device as claimed in claim 1 , wherein the second carrier and the third carrier have the same shape and area, but respectively carry different numbers of the second light-emitting elements. 4 .4.如权利要求1所述的显示设备的制造方法，其特征在于，该第一载体、该第二载体与该第三载体分别为高分子图章或静电吸盘。4 . The manufacturing method of the display device as claimed in claim 1 , wherein the first carrier, the second carrier and the third carrier are respectively a polymer stamp or an electrostatic chuck. 5 .5.如权利要求1所述的显示设备的制造方法，其特征在于，该些第一发光组件与该些第二发光组件的发光频谱实质上相同。5 . The manufacturing method of the display device as claimed in claim 1 , wherein the light-emitting spectrums of the first light-emitting elements and the second light-emitting elements are substantially the same. 6 .6.如权利要求1所述的显示设备的制造方法，其特征在于，更包括：6. The method for manufacturing a display device according to claim 1, further comprising:进行一第四转置制程，藉由一第四载体将Z个第二发光组件分别放置于该数组基板的Z个次像素区中的该些第二组件区，其中该X个次像素区、该Y个次像素区与该Z个次像素区不重叠，且该N个次像素区与该Z个次像素区部分重叠，其中，Z为大于等于1的整数。A fourth transposition process is performed, and Z second light-emitting components are respectively placed in the second component regions in the Z sub-pixel regions of the array substrate by a fourth carrier, wherein the X sub-pixel regions, The Y sub-pixel regions and the Z sub-pixel regions do not overlap, and the N sub-pixel regions and the Z sub-pixel regions partially overlap, wherein Z is an integer greater than or equal to 1.7.如权利要求1所述的显示设备的制造方法，其特征在于，该些第一发光组件与该些第二发光组件的发光频谱不同。7 . The manufacturing method of the display device as claimed in claim 1 , wherein the light-emitting spectrums of the first light-emitting elements and the second light-emitting elements are different. 8 .8.一种显示设备，其特征在于，包括：8. A display device, comprising:一数组基板，包括多个次像素区，其中该些次像素区沿一第一方向与一第二方向数组排列，且该些次像素区的每一者包括沿该第一方向排列的一第一组件区与一第二组件区；An array substrate including a plurality of sub-pixel regions, wherein the sub-pixel regions are arrayed along a first direction and a second direction, and each of the sub-pixel regions includes a first direction arranged along the first direction a component area and a second component area;多个第一发光组件，分别设置于该些次像素区中的该些第一组件区；以及a plurality of first light-emitting elements, respectively disposed in the first element regions in the sub-pixel regions; and多个第二发光组件，分别设置于该些次像素区中的该些第二组件区，a plurality of second light-emitting elements, respectively disposed in the second element regions in the sub-pixel regions,其中，藉由一第一载体将N个第一发光组件分别放置于该数组基板的N个次像素区中的该些第一组件区，藉由一第二载体将X个第二发光组件分别放置于该数组基板的X个次像素区中的该些第二组件区，藉由一第三载体将Y个第二发光组件分别放置于该数组基板的Y个次像素区中的该些第二组件区，该X个次像素区与该Y个次像素区不重叠，且该N个次像素区分别与该X个次像素区以及该Y个次像素区部分重叠，于沿该第一方向排列的该些次像素区中，该些次像素区中任一者的相邻的该第一发光组件与该第二发光组件彼此之间具有在该第二方向上的第一偏移量，且在沿该第一方向排列的次像素区中，该第一偏移量具有至少三种的值，X、Y为大于等于1的整数，N为大于等于2的整数。Wherein, N first light-emitting devices are respectively placed in the first device regions in the N sub-pixel regions of the array substrate by a first carrier, and X second light-emitting devices are respectively placed by a second carrier The second component regions are placed in the X sub-pixel regions of the array substrate, and Y second light-emitting devices are respectively placed in the second component regions in the Y sub-pixel regions of the array substrate by a third carrier. Two component regions, the X sub-pixel regions and the Y sub-pixel regions do not overlap, and the N sub-pixel regions respectively overlap with the X sub-pixel regions and the Y sub-pixel regions. In the sub-pixel regions arranged in the direction, the adjacent first light-emitting element and the second light-emitting element in any one of the sub-pixel regions have a first offset in the second direction. , and in the sub-pixel regions arranged along the first direction, the first offset has at least three values, X and Y are integers greater than or equal to 1, and N is an integer greater than or equal to 2.9.如权利要求8所述的显示设备，其特征在于，在沿该第一方向排列的次像素区中，至少有两个次像素区的该第一发光组件与该第二发光组件之间具有相同的该第一偏移量。9 . The display device of claim 8 , wherein in the sub-pixel regions arranged along the first direction, there are at least two sub-pixel regions between the first light-emitting element and the second light-emitting element. 10 . have the same first offset.10.如权利要求8所述的显示设备，其特征在于，该第一偏移量的绝对值大于0μm且小于或等于3μm。10 . The display device of claim 8 , wherein the absolute value of the first offset is greater than 0 μm and less than or equal to 3 μm. 11 .11.如权利要求8所述的显示设备，其特征在于，在沿该第二方向排列的该些次像素区中，任两相邻的次像素区中相邻的该第一发光组件彼此之间具有在该第一方向上的第二偏移量，且在沿该第二方向排列的该些次像素区中的该第二偏移量具有三种以上的值。11 . The display device of claim 8 , wherein in the sub-pixel regions arranged along the second direction, the adjacent first light-emitting elements in any two adjacent sub-pixel regions are mutually adjacent to each other. 12 . There is a second offset in the first direction, and the second offset in the sub-pixel regions arranged along the second direction has three or more values.12.如权利要求11所述的显示设备，其特征在于，在沿该第二方向排列的该些次像素区中至少有两者的该第二偏移量相同。12 . The display device of claim 11 , wherein at least two of the sub-pixel regions arranged along the second direction have the same second offset. 13 .13.如权利要求11所述的显示设备，其特征在于，该些第二偏移量的绝对值大于0μm且小于或等于3μm。13 . The display device of claim 11 , wherein absolute values of the second offsets are greater than 0 μm and less than or equal to 3 μm. 14 .14.如权利要求8所述的显示设备，其特征在于，该些第一发光组件与该些第二发光组件为具有实质相同发光频谱的发光二极管。14 . The display device of claim 8 , wherein the first light-emitting elements and the second light-emitting elements are light-emitting diodes having substantially the same light-emitting spectrum. 15 .15.如权利要求8所述的显示设备，其特征在于，该些第一发光组件与该些第二发光组件为具有不同发光频谱的发光二极管。15 . The display device of claim 8 , wherein the first light-emitting elements and the second light-emitting elements are light-emitting diodes having different light-emitting spectrums. 16 .16.如权利要求8所述的显示设备，其特征在于，该些第一发光组件与该些第二发光组件的长或宽为5μm至30μm。16 . The display device of claim 8 , wherein the length or width of the first light-emitting elements and the second light-emitting elements is 5 μm to 30 μm. 17 .

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