Summary of the invention
The present invention provides a kind of display equipment and its manufacturing method, can avoid generating and prolong along column direction and/or line directionLong strip type color/brightness disproportionation the defect stretched.
The manufacturing method of the display equipment of the embodiment of the present invention includes the following steps: offer multiple substrate, wherein the arraySubstrate includes multiple sub-pixel areas, and pixel region includes first assembly area and the second component area each time；The first transposition processing procedure is carried out,N number of first luminescence component is respectively placed in the first assembly area in N number of sub-pixel area of multiple substrate by first vector；IntoX the second luminescence components are respectively placed in X sub-pixel area of multiple substrate by row the second transposition processing procedure by Second supportThe second component area；And third transposition processing procedure is carried out, Y the second luminescence components are respectively placed in the number by third carrierThe second component area in Y sub-pixel area of group substrate.X sub-pixel area and Y sub-pixel area be not be overlapped, and N number of sub-pixelArea partly overlaps with X sub-pixel area and Y sub-pixel area respectively.
In some embodiments, Second support can have different shapes and/or area from third carrier.
In some embodiments, Second support can be mutually the same with area with the shape of third carrier, but can carry respectivelySecond luminescence component of different number.
In some embodiments, first vector, Second support and third carrier may respectively be macromolecule seal or electrostatic is inhaledDisk.
In some embodiments, the luminous frequency spectrum of the first luminescence component and the second luminescence component can be substantially identical to each other.
In some embodiments, the manufacturing method of above-mentioned display equipment is more can include: the 4th transposition processing procedure is carried out, byZ the second luminescence components are respectively placed in the second component area in Z sub-pixel area of multiple substrate by the 4th carrier.X timesPixel region, Y sub-pixel area and Z sub-pixel area be not be overlapped, and N number of sub-pixel area partly overlaps with Z sub-pixel area.
In some embodiments, the first luminescence component can be different from each other with the luminous frequency spectrum of the second luminescence component.
The display equipment of the embodiment of the present invention includes multiple substrate, multiple first luminescence components and second luminous group multiplePart.Multiple substrate includes multiple sub-pixel areas.Those sub-pixel areas are arranged along first direction and second direction array, and each timePixel region includes first assembly area arranged in the first direction and the second component area.Multiple first luminescence components are respectively arranged at secondaryFirst assembly area in pixel region.Multiple second luminescence components are respectively arranged at the second component area in sub-pixel area.In alongIn the sub-pixel area of one direction arrangement, adjacent the first luminescence component and the second luminescence component of any one in sub-pixel area is each otherBetween there is the first offset in a second direction.In addition, in sub-pixel area arranged in the first direction, the first offsetWith at least three kinds of value.
In some embodiments, in sub-pixel area arranged in the first direction, at least there are two sub-pixel area firstIt can the first offset having the same between luminescence component and the second luminous member.
In some embodiments, the absolute value of the first offset can be greater than 0um and be less than or equal to 3 μm.
In some embodiments, adjacent in wantonly two adjacent sub-pixel areas in the sub-pixel area arranged in a second directionThe first luminescence component can have the second offset in a first direction each other, and in the secondary picture arranged in a second directionThe second offset in plain area can have there are three types of above value.
In some embodiments, in the sub-pixel area arranged in a second direction, can at least there be second offset of the twoIt is identical.
In some embodiments, the absolute value of the second offset can be greater than 0 μm and be less than or equal to 3 μm.
In some embodiments, the first luminescence component and the second luminescence component can be the hair with substantially identical luminous frequency spectrumOptical diode.
In some embodiments, the first luminescence component can be luminous two with the different frequency spectrums that shine from the second luminescence componentPole pipe.
In some embodiments, the length/width of the first luminescence component and the second luminescence component can be 5 μm to 30 μm.
Based on above-mentioned, compared to the transposition area of each transposing step than the transposition area of a preceding transposing step along column sideTo or line direction be displaced an offset mode multiple luminescence components are placed on multiple substrate, the embodiment of the present invention makes firstThe transposition area of transposition processing procedure partially overlaps the second transposition processing procedure of subsequent progress to third transposition processing procedure (or the second transposition processing procedureTo the 4th transposition processing procedure) transposition area, and make the second transposition processing procedure to third transposition processing procedure (or the second transposition processing procedure is to the 4th turnSet processing procedure) transposition area do not overlap each other.In other words, the first transposition processing procedure of the embodiment of the present invention to third transposition processing procedure (orFirst transposition processing procedure to the 4th transposition processing procedure) transposition area be sequentially displaced not along column direction or line direction.In this way, on edgeColumn direction or line direction arrangement multiple sub-pixel areas in, the first luminescence component and the second luminescence component in sub-pixel area existOffset on column direction or line direction can have two or more or three kinds or more values.Therefore, in degree limited and more in havocUnder offset variation, the display equipment of the embodiment of the present invention can eliminate coloration unevenness or the defect of brightness disproportionation in display equipmentDirectionality, that is, can avoid generating lacking for the strip coloration unevenness or brightness disproportionation extended along column direction and/or line directionIt falls into.
Below in conjunction with the drawings and specific embodiments, the present invention will be described in detail, but not as a limitation of the invention.
Specific embodiment
Technical solution of the present invention is described in detail in the following with reference to the drawings and specific embodiments, to be further understood thatThe purpose of the present invention, scheme and effect, but it is not intended as the limitation of scope of the appended claims of the present invention.
Fig. 1 is the flow chart according to the manufacturing method of the display equipment 10 of some embodiments of the invention.Fig. 2A is with Fig. 2 BAccording to the schematic top plan view of different phase in the transposition processing procedure of the manufacturing method of the display equipment 10 of some embodiments of the invention.ThisThe manufacturing method of the display equipment 10 of inventive embodiments includes the following steps.
Fig. 1 and Fig. 2A are please referred to, step S100 is carried out, multiple substrate 100 is provided.The material of multiple substrate 100 may includeGlass, quartz, organic polymer, opaque/reflecting material (e.g. conductive material, metal, wafer, ceramics or other are fittedMaterial) or other materials applicatory.If when using conductive material or metal, can be covered on multiple substrate 100One layer insulating, to avoid the problem of short circuit.Multiple substrate 100 includes multiple pixel region P.Multiple pixel region P are along first partyIt is arranged to D1 and second direction D2 array.Each pixel region P includes multiple sub-pixel area SP (e.g. 3 sub-pixel area SP).In some embodiments, multiple sub-pixel area SP in each pixel region P can be arranged along second direction D2.However, this fieldTechnical staff can adjust the quantity and arrangement mode of the sub-pixel area SP in each pixel region P according to design requirement, the present inventionIt is not limited thereto.Pixel region SP includes first assembly area DR1 and the second component area DR2 each time.In some embodiments, oftenFirst assembly area DR1 and the second component area DR2 in pixel region SP D1 can be arranged along a first direction.In subsequent stepIn, one or more luminescence components can be set in first assembly area DR1 and the second component area DR2 respectively.In addition, each time asPlain area SP more may include pixel driver component (omission is painted), to drive the luminescence component in pixel region SP each time.
Step S102 is carried out, the first transposition processing procedure is carried out, N number of luminescence component of the first wafer (not being painted) will be derived fromIt is transposed in the first transposition area TR1 of multiple substrate 100 by first vector (not being painted).In some embodiments, N number of to shineComponent can be directly by being transposed on multiple substrate 100 on the first wafer (not being painted).In other embodiments, N number of luminescence componentArray can be transposed to by the first transposition processing procedure again later by transposition on the first wafer on another temporary substrate (not being painted)On substrate 100.In some embodiments, can grow up by epitaxy (epitaxial growth) mode by multiple luminescence componentsIt is formed on the first wafer.Wafer as described herein means semiconductor crystal wafer or any substrate for being formed with electronic building brick.It is formedThere is substantially the same luminous frequency spectrum in multiple luminescence components on the first wafer.Each luminescence component can be light-emitting diodesPipe, e.g. micro- light emitting diode (micro LED).In some embodiments, the size (that is, long or wide) of luminescence component canIt is 5 μm to 30 μm.Luminescence component can be by e.g. seal transposition (stamp imprinting), electrostatic transposition(electrostatic imprinting) or other transposition methods place the first set in multiple luminescence components to arrayOn substrate 100.The first set of multiple luminescence components includes N number of luminescence component, and referred to here as N number of first luminescence component LD1.N number of first luminescence component LD1 is placed in the first transposition area TR1.N number of first luminescence component LD1 can be placed on first turnIt sets in N number of sub-pixel area SP in area TR1 with identical luminous frequency spectrum, so as to adjacent first shine in the first transposition area TR1There is substantially the same interval between component LD1.In some embodiments, N number of first luminescence component LD1 can be placed onIn the first assembly area DR1 for stating N number of sub-pixel area SP in the first transposition area TR1.
In some embodiments, the length L of the first transposition area TR1 in the first direction dl can be 0.5cm to 15cm.FirstThe width W of transposition area TR1 in a second direction d 2 can be 0.5cm to 15cm.In addition, the profile of the first transposition area TR1 can be squareShape.However, those skilled in the art can adjust the size and profile of the first transposition area TR1 according to process requirement, the present invention is notAs limit.In some embodiments, the area of the first transposition area TR1 can be substantially equal to the area of first vector.In addition, theThe profile of one transposition area TR1 can also be substantially Chong Die with the profile of first vector.In this way, first vector carried it is N number ofThe distribution of first luminescence component LD1 can substantially be overlapped in the profile of first vector.In other embodiments, the first transpositionThe area of area TR1 is smaller than the area of first vector, therefore the distribution model of N number of first luminescence component LD1 that first vector is carriedEnclose the inside that can be located at the profile of first vector.
Fig. 1 and Fig. 2 B are please referred to, step S104 is carried out, carries out the second transposition processing procedure, X of the first wafer will be derived fromLuminescence component is transposed in the second transposition area TR2 of multiple substrate 100 via Second support (not being painted).Second transposition processing procedure phaseBe similar to the first transposition processing procedure, only the second transposition processing procedure be the second set of multiple luminescence components is placed via Second support toIn second transposition area TR2 of multiple substrate 100.The second set of multiple luminescence components includes X luminescence component, and referred to here asX the second luminescence component LD2.The first set and second set of multiple luminescence components do not have intersection, that is, X second shinesComponent LD2 is not equal to N number of first luminescence component LD1, but has substantially the same luminous frequency spectrum each other.In some embodimentsIn, the area of the second transposition area TR2 can be substantially equal to the area of Second support.In addition, the profile of the second transposition area TR2 can alsoIt is substantially Chong Die with the profile of Second support.In this way, the distribution for X the second luminescence component LD2 that Second support is carriedRange can substantially be overlapped in the profile of Second support.In other embodiments, the area of the second transposition area TR2 is smaller than secondThe area of carrier, therefore the distribution of the X that is carried the second luminescence component LD2 of Second support can be located at the profile of Second supportInside.On the other hand, it is similar to first vector, Second support also can be macromolecule seal or electrostatic chuck.
X the second luminescence component LD2 can be placed on second of X sub-pixel area SP in above-mentioned second transposition area TR2In component area DR2.First transposition area TR1 partly overlaps with the second transposition area TR2.In other words, can have in the first transposition area TR1The boundary of second transposition area TR2, and vice versa.In addition, N number of sub-pixel area SP and the second transposition in the first transposition area TR1X sub-pixel area in area TR2 partly overlaps.In some embodiments, the profile of the first transposition area TR1 and/or area can phasesDifferent from the profile and/or area of the second transposition area TR2.In some embodiments, the first transposition area TR1 and the second transposition area TR2Overlapping region can cover at least two sub-pixel area SP with identical luminous frequency spectrum.In the first transposition area TR1 and second turnIn the overlapping region for setting area TR2, the first luminescence component LD1 is placed on respectively with the second luminescence component LD2 and shines with identicalIn the first assembly area DR1 and the second component area DR2 of same group of sub-pixel area SP of frequency spectrum.In the first transposition area TR1 and secondIn the overlapping region of transposition area TR2, the first luminescence component LD1 of each of same group of sub-pixel SP and the second luminescence componentLD2 can have offset F1 in the first direction dl, and can have offset F2 in a second direction d 2.In some embodimentsIn, offset F1 and offset F2 can be respectively greater than 0 μm and be less than or equal to 3 μm.
In other embodiments, the method for carrying out the second transposition processing procedure, which may also comprise, to be derived from the second wafer (not being painted)X luminescence component be transposed to by Second support in the second transposition area TR2 of multiple substrate 100.In some embodiments,Multiple luminescence components can be formed on the second wafer by the mode that epitaxy is grown up.It is formed in multiple luminous on the second waferComponent is similar to the luminescence component being formed on the first wafer, and the frequency spectrum that only shines is different from each other.For example, it is formed in the second crystalline substanceLuminescence component on circle can be red light-emitting diode, and the luminescence component being formed on the first wafer can for blue light diode,Green diode, ultraviolet-ray diode, yellow light diode or white light-emitting diodes.Formed on the second wafer multiple luminescence components itAfterwards, the subclass in multiple luminescence components on the second wafer can be directly transposed on multiple substrate 100, or indirectlyIt is transposed on multiple substrate 100 via another temporary substrate (not being painted).The subclass of multiple luminescence components includes X hairOptical assembly, and referred to here as X the second luminescence component LD2.It follows that in these embodiments, X the second luminescence componentsThe luminous frequency spectrum of LD2 is different from the luminous frequency spectrum of N number of first luminescence component LD1.In addition, in the first transposition area TR1 and second turnIn the overlapping region for setting area TR2, at least two luminescence components that sub-pixel area SP can have luminous frequency different from each other.
Step S106 is carried out, third transposition processing procedure is carried out, Y luminescence component of the first wafer will be derived from via thirdCarrier (not being painted) is transposed in the third transposition area TR3 of multiple substrate 100.Third transposition processing procedure is similar to the first transposition systemJourney, only third transposition processing procedure is to place the third set for the multiple luminescence components for being derived from the first wafer via third carrierIn the third transposition area TR3 of multiple substrate 100.The third set of multiple luminescence components includes Y luminescence component, and referred herein toFor Y the second luminescence component LD3.The first set and third set of multiple luminescence components do not have intersection, that is, Y second hairOptical assembly LD3 is not equal to N number of first luminescence component LD1, but has substantially the same luminous frequency spectrum each other.In some implementationsIn example, the area of third transposition area TR3 can be substantially equal to the area of third carrier.In addition, the profile of third transposition area TR3It can be substantially Chong Die with the profile of third carrier.In this way, point for Y the second luminescence component LD3 that third carrier is carriedCloth range can substantially be overlapped in the profile of third carrier.In other embodiments, the area of third transposition area TR3 is smaller thanThe area of three carriers, therefore the distribution of the Y that is carried the second luminescence component LD3 of third carrier can be located at the wheel of third carrierWide inside.On the other hand, it is similar to Second support, third carrier also can be macromolecule seal or electrostatic chuck.In some realitiesIt applies in example, Second support has different shape and/or area from third carrier.In other embodiments, Second support andThe shape of three carriers is identical as area, but the luminescence component of transposition different number respectively.
Y the second luminescence component LD3 can be placed on Y time pictures in third transposition area TR3 with identical luminous frequency spectrumIn the second component area DR2 of plain area SP.First transposition area TR1 partly overlaps with third transposition area TR3, and the second transposition area TR2It is not Chong Die with third transposition area TR3.In other words, there can be the boundary of third transposition area TR3 in the first transposition area TR1, and on the contrary?.In addition, not having the boundary of third transposition area TR3 in the second transposition area TR2, and do not have the in third transposition area TR3The boundary of two transposition area TR2.It follows that N number of sub-pixel area SP in the first transposition area TR1 and Y in third transposition area TR3A sub-pixel area partly overlaps.In addition, X sub-pixel area in the second transposition area TR2 and Y times in third transposition area TR3Pixel region is not overlapped.In some embodiments, the profile of the first transposition area TR1 and/or area can be different from third transposition area TR3Profile and/or area.In some embodiments, the overlapping region of the first transposition area TR1 and third transposition area TR3 can cover toolThere are at least two sub-pixel area SP of identical luminous frequency spectrum.In the overlapping region of the first transposition area TR1 and third transposition area TR3Interior, the first luminescence component LD1 is placed on the same group of sub-pixel with identical luminous frequency spectrum with the second luminescence component LD3 respectivelyIn the first assembly area DR1 of area SP and the second component area DR2.In the overlapping region of the first transposition area TR1 and third transposition area TR3It is interior, the first luminescence component LD1 and the second luminescence component LD2 of each of same group of sub-pixel SP D1 and in a first directionOffset F3 and offset F4 can be respectively provided on two direction D2.In some embodiments, offset F3 and offset F4 can divideNot great Yu 0 μm and be less than or equal to 3 μm.
In other embodiments, the method for carrying out third transposition processing procedure, which may also comprise, to be derived from third wafer (not being painted)Y luminescence component be transposed in the third transposition area TR3 of multiple substrate 100 by third carrier.In some embodiments,Multiple luminescence components can be formed on third wafer by the mode that epitaxy is grown up.It is formed in multiple luminous on third waferComponent is similar to the luminescence component being formed on the first wafer, and the frequency spectrum that only shines is different each other.In addition, being formed on third waferThe luminous frequency spectrum of luminescence component can be substantially the same with the luminous frequency spectrum for the luminescence component being formed on the second wafer or each otherIt is different.It is formed on third wafer after multiple luminescence components, it can be by the subset in multiple luminescence components on third waferIt closes and directly places on multiple substrate 100, or elder generation's transposition is on another temporary substrate (being painted), then again by third transpositionProcessing procedure and be placed in the third transposition area TR3 of multiple substrate 100.The subclass of multiple luminescence components on third waferIncluding Y luminescence component, and referred to here as Y the second luminescence component LD3.It follows that in these embodiments, Y secondThe luminous frequency spectrum of luminescence component LD3 is different from the luminous frequency spectrum of N number of first luminescence component LD1.In addition, in the first transposition area TR1There can be different from each other at least two luminous groups of luminous frequency with the sub-pixel area SP in the overlapping region of third transposition area TR3Part.
In some embodiments, step S108 can be more carried out, the 4th transposition processing procedure is carried out.4th transposition processing procedure is similar to stepThird transposition processing procedure in rapid S106, herein only at the difference of both descriptions, same or similar place is then repeated no more.At the 4th turnIt sets in processing procedure, Z luminescence component for being derived from the first wafer (or being derived from another 4th wafer) (is not drawn via the 4th carrierShow) it is transposed in the 4th transposition area TR4 of multiple substrate 100.4th set the (or the 4th of multiple luminescence components of the first waferOne subclass of multiple luminescence components of wafer) it include Z luminescence component, and referred to here as Z the second luminescence component LD4.TheThe first set of multiple luminescence components of one wafer does not have intersection with the 4th set, that is, Z the second luminescence component LD4 are differedIt is same as N number of first luminescence component LD1, but there can be substantially the same luminous frequency spectrum each other.In some embodiments, it is derived fromThe luminous frequency spectrum of Z the second luminescence component LD4 of the 4th wafer is different from the luminous frequency spectrum of N number of first luminescence component LD1.OneIn a little embodiments, Second support, third carrier have different shape and/or area from the 4th carrier.In other embodiments,The shape for appointing the two in Second support, third carrier and the 4th carrier is identical as area, but carries luminous group of different numberPart.
Z the second luminescence component LD4 can be placed on Z time pictures in the 4th transposition area TR4 with identical luminous frequency spectrumIn the second component area DR2 of plain area SP.First transposition area TR1 partly overlaps with the 4th transposition area TR4, and the 4th transposition area TR4It is not Chong Die with the second transposition area TR2 and third transposition area TR3.In other words, there can be the 4th transposition area in the first transposition area TR1The boundary of TR4, and vice versa.In addition, without the 4th transposition area TR4 in the second transposition area TR2 and third transposition area TR3Boundary, and do not have the boundary of the second transposition area TR2 and third transposition area TR3 in the 4th transposition area TR4.It follows that firstZ sub-pixel area SP in N number of sub-pixel area SP and the 4th transposition area TR4 in transposition area TR1 partly overlaps.In addition, secondIn the Y sub-pixel area SP and the 4th transposition area TR4 in X sub-pixel area SP, third transposition area TR3 in transposition area TR2Z sub-pixel area SP be not overlapped.In some embodiments, the profile of the first transposition area TR1 and/or area can be different from the 4thThe profile and/or area of transposition area TR4.In some embodiments, the overlay region of the first transposition area TR1 and the 4th transposition area TR4Domain can cover at least two sub-pixel area SP with identical luminous frequency spectrum.The first transposition area TR1's and the 4th transposition area TR4In overlapping region, the first luminescence component LD1 is placed on respectively with the second luminescence component LD4 with the same of identical luminous frequency spectrumIn the first assembly area DR1 and the second component area DR2 of group sub-pixel area SP.The first transposition area TR1's and third transposition area TR3In overlapping region, the first luminescence component LD1 and the second luminescence component LD4 of each of same group of sub-pixel SP is in first partyThere can be offset F5 on D1, and there can be offset F6 in a second direction d 2.In some embodiments, offset F5 andOffset F6 can be respectively greater than 0 μm and be less than or equal to 3 μm.
Those skilled in the art can more carry out being similar to the second transposition processing procedure, third transposition processing procedure and according to process requirementOther transposition processing procedures of four transposition processing procedures, so that the first luminescence component LD1 and the second luminescence component adjacent in multiple substrate are (alsoThat is the second luminescence component LD2, the second luminescence component LD3 or the second luminescence component LD4) between offset have it is more differentValue.In addition, in some embodiments, may be repeated step S102 to step S108, so that each group of tool of multiple substrate 100There are the first assembly area DR1 and the second component area DR2 of the sub-pixel area SP of identical luminous frequency spectrum to be all placed with first respectively to shineComponent LD1 and the second luminescence component (that is, the second luminescence component LD2, the second luminescence component LD3 or second luminescence component LD4).In some embodiments, multiple first transposition area TR1 can not overlap each other, and the shape of multiple first transposition area TR1 can be each otherIt is identical or different.But in addition, the quantity of the area of multiple first transposition area TR1 and the first contained luminescence component LD1 thatThis is identical or different.In further embodiments, the first adjacent transposition area TR1 can partly overlap.In these embodiments,There can be D1 in a first direction and/or second between the first luminescence component LD1 of mutually partially overlapping adjacent sub-pixel area SPOffset (not being painted) between sub-pixel on the D2 of direction.In addition, in the sub-pixel along first direction D1 or second direction D2 arrangementOffset can have at least three kinds or more of value between sub-pixel in SP.In some embodiments, the first adjacent transposition area TR1Overlapping region can cover at least two sub-pixel area SP.In this way, in the sub-pixel of the arrangement of D2 in a second direction at leastThere can be offset between the sub-pixel of the two identical.For example, respective sub-pixel on D1 and second direction D2 in a first directionBetween offset absolute value can be greater than 0 μm and be less than or equal to 3 μm.
So far, the manufacture of the display equipment 10 of the embodiment of the present invention is completed.In ideal conditions, pixel region each timeThe first luminescence component LD1 and the second luminescence component (that is, the second luminescence component LD2, the second luminescence component LD3 or second in SPLuminescence component LD4) offset in a second direction d 2 substantially should be zero, and offset in the first direction dl should be each otherIt is identical.However, based on error caused by transposition device/processing procedure, above-mentioned offset in a second direction d 2 be possible to be notZero, and above-mentioned offset in the first direction dl is possible to different each other.It is equal compared to the transposition area of each transposing stepTransposition area than a preceding transposing step is displaced an offset along column direction (second direction D2) or line direction (first direction D1)Mode multiple luminescence components are placed on multiple substrate, the embodiment of the present invention make the first transposition processing procedure transposition area part weightThe second transposition processing procedure of subsequent progress is laminated on to the transposition of third transposition processing procedure (or second transposition processing procedure to the 4th transposition processing procedure)Area, and make the second transposition processing procedure to the transposition area of third transposition processing procedure (or second transposition processing procedure to the 4th transposition processing procedure) each other notOverlapping.In other words, the first transposition processing procedure of the embodiment of the present invention is to third transposition processing procedure (or the first transposition processing procedure to the 4th transpositionProcessing procedure) transposition area be sequentially displaced not along column direction (second direction D2) or line direction (first direction D1).In this way,In the range of first transposition area TR1, the first luminescence component LD1 and the second luminescence component in sub-pixel area SP (that is, the second hairOptical assembly LD2, the second luminescence component LD3 or the second luminescence component LD4) in column direction (second direction D2) or line direction (firstDirection D1) on offset can have two or more or three kinds or more values.Therefore, in the offset quantitative change of degree limited and more in havocUnder change, the display equipment 10 of the embodiment of the present invention can eliminate coloration uneven (color mura) or brightness disproportionation (luminanceMura the directionality of) the defects of, that is, can avoid generating along column direction (second direction D2) and/or line direction (first directionD1 the defect of the strip coloration unevenness or brightness disproportionation that) extend.
Next, by the structure for the display equipment 10 for illustrating the embodiment of the present invention referring to Fig. 2 B.
B referring to figure 2., the display equipment 10 of the embodiment of the present invention include multiple substrate 100.Multiple substrate 100 includes moreA sub-pixel area SP.Multiple sub-pixel area SP are arranged along first direction D1 and second direction D2 array.Multiple sub-pixel area SP'sEach includes the first assembly area DR1 and the second component area DR2 along first direction D1 arrangement.Display equipment 10 further includes multipleFirst luminescence component LD1 and multiple second luminescence components (that is, the second luminescence component LD2, the second luminescence component LD3 and secondLuminescence component LD4).Multiple first luminescence component LD1 are respectively arranged at multiple first assembly area DR1 of multiple sub-pixel area SP.Multiple second luminescence components (that is, the second luminescence component LD2, the second luminescence component LD3 and second luminescence component LD4) are respectivelyThe multiple second components area DR2 being set in multiple sub-pixel area SP.In multiple sub-pixel areas of the arrangement of D1 along a first directionIn SP, the first adjacent luminescence component LD1 of any sub-pixel area SP and the second luminescence component (that is, the second luminescence component LD2,Second luminescence component LD3 and the second luminescence component LD4) between there is the first offset in a second direction d 2.In addition,Along multiple sub-pixel areas of first direction D1 arrangement, the first above-mentioned offset (is e.g. deviated at least three kinds of valueMeasure F2, offset F4 and offset F6).In some embodiments, (the e.g. area in the region of the first transposition area TR1Range is 0.0025cm2To 225cm2), the first above-mentioned offset (e.g. offset F2, is deviated at least three kinds of valueMeasure F4 and offset F6).
In some embodiments, in the sub-pixel area SP arranged along first direction D1, at least two sub-pixel area SP'sFirst luminescence component LD1 and the second luminescence component (that is, the second luminescence component LD2, the second luminescence component LD3 or second luminous groupPart LD4) between the first offset having the same.In some embodiments, the absolute value of above-mentioned first offset be greater than 0 μm andLess than or equal to 3 μm.In some embodiments, in the multiple sub-pixel area SP arranged along second direction D2, wantonly two is adjacentSub-pixel area SP the first adjacent luminescence component LD1 between have the second offset in the first direction dl (that is, secondaryInter-pixel shift amount).In addition, the second above-mentioned offset has extremely in multiple sub-pixel areas of the arrangement of D2 in a second directionFew three kinds of value.In some embodiments, above-mentioned second offset of at least two sub-pixel area SP of D2 arrangement in a second directionIt measures mutually the same.In some embodiments, the absolute value of above-mentioned second offset is greater than 0 μm and is less than or equal to 3 μm.SomeIn embodiment, the first luminescence component LD1 and the second luminescence component (the second luminescence component LD2, the second luminescence component LD3 andTwo luminescence component LD4) it is the light emitting diode with substantially the same luminous frequency spectrum.In some embodiments, it first shinesComponent LD1 and the second luminescence component (the second luminescence component LD2, the second luminescence component LD3 and the second luminescence component LD4) are toolThere is the light emitting diode of different luminous frequency spectrums.In some embodiments, the first luminescence component LD1 and the second luminescence component (Two luminescence component LD2, the second luminescence component LD3 and the second luminescence component LD4) length/width be respectively 5 μm to 30 μm.
Fig. 3 A and Fig. 3 B is the first transposition system according to the manufacturing method of the display equipment 20 of other embodiments of the inventionThe schematic top plan view in the transposition area of journey and the second transposition processing procedure.The manufacturing method of display equipment 20 is similar to shown in Fig. 2A and Fig. 2 BDisplay equipment 10 manufacturing method, below only description both difference at, same or similar place then repeats no more.
A referring to figure 3. carries out the first transposition processing procedure, will be derived from N number of luminescence component on the first wafer by firstCarrier is transposed in the first transposition area TR1a of multiple substrate 100.With for purpose of brevity, Fig. 3 A is only painted multiple substrate 100 andOne transposition area TR1a.In some embodiments, multiple first transposition processing procedure can be carried out, so that point of multiple first transposition area TR1aCloth range covers entire multiple substrate 100.In the present embodiment, the shape of multiple first transposition area TR1a can be different each other, andRespectively non-rectangle arbitrary polygon.In this way, which the extending direction on the boundary of multiple first transposition area TR1a can be handed over each otherIt is wrong.Therefore, it can further eliminate issuable along column direction (second direction D2) or capable between adjacent first transposition area TR1aThe coloration unevenness for the strip that direction (first direction D1) extends or the defect of brightness disproportionation.
B referring to figure 3. carries out the second transposition processing procedure, will be derived from the X on the first wafer (or second wafer) luminous groupPart is transposed in the second transposition area TR2a of multiple substrate 100 via Second support (not being painted).It in some embodiments, can be intoThe multiple second transposition processing procedure of row, so that the distribution of multiple second transposition area TR2a covers entire multiple substrate 100.Second turnIt sets area TR2a and the first transposition area TR1a to partly overlap, and multiple second transposition area TR2a does not overlap each other.In other words, every 1Can have in at least boundary of one second transposition area TR2 or every one second transposition area TR2a in one transposition area TR1a can have toThe boundary of few one first transposition area TR1a.It is similar to the first transposition area TR1a, the shape of multiple second transposition area TR2a can be each otherIt is different, and respectively non-rectangle arbitrary polygon.In this way, which the extending direction on the boundary of multiple second transposition area TR2a canIt is interlaced with each other.Therefore, it can further eliminate issuable along column direction (second direction between adjacent second transposition area TR2aD2) or the coloration of strip that extends of line direction (first direction D1) is uneven or the defect of brightness disproportionation.In some embodiments,The extending direction on the boundary of the second transposition area TR2 can interlock with the extending direction on the boundary of the first transposition area TR1.It therefore, can be moreThe directionality of the defect of coloration unevenness or brightness disproportionation is further eliminated, that is, the uniformity of chromaticity of display equipment 20 can be improvedWith brightness uniformity.
In conclusion compared to the transposition area of each transposing step than the transposition area of a preceding transposing step along column sideTo or line direction be displaced an offset mode multiple luminescence components are placed on multiple substrate, the embodiment of the present invention makes firstThe transposition area of transposition processing procedure partially overlaps the second transposition processing procedure of subsequent progress to third transposition processing procedure (or the second transposition processing procedureTo the 4th transposition processing procedure) transposition area, and make the second transposition processing procedure to third transposition processing procedure (or the second transposition processing procedure is to the 4th turnSet processing procedure) transposition area do not overlap each other.In other words, the first transposition processing procedure of the embodiment of the present invention to third transposition processing procedure (orFirst transposition processing procedure to the 4th transposition processing procedure) transposition area be sequentially displaced not along column direction or line direction.In this way, on edgeColumn direction or line direction arrangement multiple sub-pixel areas in, the first luminescence component and the second luminescence component in sub-pixel area existOffset on column direction or line direction can have two or more or three kinds or more values.Therefore, the display of the embodiment of the present inventionEquipment can eliminate the directionality of coloration unevenness or the defect of brightness disproportionation in display equipment, that is, can avoid generating along column directionAnd/or the strip coloration that extends of line direction is uneven or the defect of brightness disproportionation.
Certainly, the present invention can also have other various embodiments, without deviating from the spirit and substance of the present invention, ripeIt knows those skilled in the art and makes various corresponding changes and modifications, but these corresponding changes and change in accordance with the present inventionShape all should fall within the scope of protection of the appended claims of the present invention.