CN109341554B - Device and method for measuring film thickness - Google Patents
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Abstract
Description
Translated fromChinese技术领域technical field
本发明涉及膜层检测领域，具体涉及一种测量膜厚的装置及方法。The invention relates to the field of film layer detection, in particular to a device and method for measuring film thickness.
背景技术Background technique
薄膜厚度的测量是在材料研究和集成电路制造中必不可少的，特别是在集成电路制造过程中，光刻胶的涂布、薄膜的生长、刻蚀的测试等等，都必须精确地测量各个工序后硅片表面的膜层形貌。以12寸硅片为例，为了检测光刻胶的涂布效果，通常需在x和y方向各测量25个点，以体现光刻胶在整片硅片上的分布。The measurement of film thickness is essential in material research and integrated circuit manufacturing, especially in the integrated circuit manufacturing process, photoresist coating, film growth, etching testing, etc., must be accurately measured The morphology of the film on the surface of the silicon wafer after each process. Taking a 12-inch silicon wafer as an example, in order to detect the coating effect of the photoresist, it is usually necessary to measure 25 points in each of the x and y directions to reflect the distribution of the photoresist on the entire silicon wafer.
椭圆偏振测量法是最主要的薄膜参数测量技术。该技术通过测量经被测物体反射后光线的偏振态的强度和相位变化(即椭偏参数Ψ和Δ)，来获得样品的厚度和折射率等信息。Ellipsometry is the most important thin film parameter measurement technique. This technology obtains information such as the thickness and refractive index of the sample by measuring the intensity and phase changes of the polarization state of the light reflected by the object to be measured (ie, ellipsometry parameters Ψ and Δ).
椭偏参数Ψ和Δ并不是直接测量到的物理量，而是需要边调制偏振态边实时测量反射光的强度I，再由强度随时间的变化关系经傅立叶变换后得到椭偏参数Ψ和Δ，最终通过建模拟拟合计算出相应的厚度和折射率。由于数学运算可以离线完成，对于设备而言，经偏振态调制的各波长下的反射强度I即为最直接的测量物理量。The ellipsometry parameters Ψ and Δ are not directly measured physical quantities, but the intensity I of the reflected light needs to be measured in real time while modulating the polarization state, and then the ellipsometry parameters Ψ and Δ are obtained by Fourier transform from the relationship between the intensity and time. Finally, the corresponding thickness and refractive index are calculated by modeling and fitting. Since the mathematical operation can be done offline, for the device, the reflection intensity I at each wavelength modulated by the polarization state is the most direct physical quantity to measure.
目前主流的测量方式是利用椭偏仪进行单点测量，当测量点较多时耗时较长，且每测完一个点都需要机械运动，不利于精度的控制。因此需要找到一种新的方法来一次性测量多个点的反射信号，同时还要方便数据的收集和处理。The current mainstream measurement method is to use an ellipsometer for single-point measurement, which takes a long time when there are many measurement points, and requires mechanical movement every time a point is measured, which is not conducive to precision control. Therefore, it is necessary to find a new method to measure the reflected signals of multiple points at one time, and at the same time, it is convenient to collect and process the data.
发明内容SUMMARY OF THE INVENTION
本发明的目的是提供一种测量膜厚的装置及方法，能够同时测量多个点的反射信号，既能提高测量速度，又大大减少了测量过程中的机械运动。The purpose of the present invention is to provide a device and method for measuring film thickness, which can measure the reflected signals of multiple points at the same time, which can not only improve the measurement speed, but also greatly reduce the mechanical movement in the measurement process.
为了实现上述目的，本发明采用如下技术方案：一种测量膜厚的装置，用于测量位于晶圆表面一条直线上的n个待测点的膜层厚度；包括发射光束的宽光谱光源、光束整形器、固定起偏器、旋转起偏器、聚焦光栅单元、检偏器和图像传感器；In order to achieve the above object, the present invention adopts the following technical solutions: a device for measuring film thickness, used for measuring the film thickness of n points to be measured located on a straight line on the wafer surface; Shapers, fixed polarizers, rotating polarizers, focusing grating units, analyzers and image sensors;
所述宽光谱光源发出的光束经过所述光束整形器形成线状光束，所述线状光束覆盖所有待测点，所述线状光束依次经过所述固定起偏器和旋转起偏器进入晶圆表面的膜层，并在晶圆表面的膜层中发生反射，线状光束经过膜层反射之后进入所述聚焦光栅单元，所述聚焦光栅单元将反射之后的线状光束色散为二维光谱，且色散方向与所述线状光束所在直线的方向正交，所述二维光谱经过所述检偏器进入所述图像传感器，得到关于光强信号的二维光谱图像，所述二维光谱图像正交的两个方向分别对应所述线状光束入射到晶圆表面膜层中的位置和该位置入射光的波长；根据所述二维光谱图像上的光强信号得到晶圆表面对应位置的膜层厚，其中，n为大于等于1的整数度。The beam emitted by the wide-spectrum light source passes through the beam shaper to form a linear beam, the linear beam covers all the points to be measured, and the linear beam enters the crystal through the fixed polarizer and the rotating polarizer in turn. The film layer on the round surface is reflected in the film layer on the surface of the wafer, and the linear beam enters the focusing grating unit after being reflected by the coating layer, and the focusing grating unit disperses the reflected linear beam into a two-dimensional spectrum. , and the dispersion direction is orthogonal to the direction of the straight line where the linear beam is located, the two-dimensional spectrum enters the image sensor through the analyzer to obtain a two-dimensional spectral image of the light intensity signal, the two-dimensional spectrum The two orthogonal directions of the image respectively correspond to the position where the linear beam is incident on the film layer on the wafer surface and the wavelength of the incident light at the position; the corresponding position on the wafer surface is obtained according to the light intensity signal on the two-dimensional spectral image , where n is an integer degree greater than or equal to 1.
进一步地，所述聚焦光栅单元包括光栅和聚焦光学系统，线状光束经过膜层反射之后进入所述光栅，所述光栅将反射之后的线状光束色散为二维光谱，所述二维光谱依次经过所述聚焦光学系统和检偏器进入所述图像传感器。Further, the focusing grating unit includes a grating and a focusing optical system, the linear light beam enters the grating after being reflected by the film layer, and the grating disperses the reflected linear light beam into a two-dimensional spectrum, and the two-dimensional spectrum is sequentially The image sensor is entered through the focusing optical system and the analyzer.
进一步地，所述光栅为一维光栅，且所述光栅的刻线方向沿Y轴方向，所述光栅的刻线周期沿X轴方向；所述线状光束所在直线的方向为Y轴方向。Further, the grating is a one-dimensional grating, and the grating line direction is along the Y-axis direction, and the grating line period is along the X-axis direction; the direction of the line where the linear beam is located is the Y-axis direction.
进一步地，所述线状光束在所述一维光栅上发生色散，且色散方向为X轴方向，形成二维光谱；其中，二维光谱中Y轴方向对应表示线状光束入射到晶圆表面膜层的位置，二维光谱中X轴方向对应该位置对应入射光的波长。Further, the linear beam is dispersed on the one-dimensional grating, and the dispersion direction is the X-axis direction, forming a two-dimensional spectrum; wherein, the Y-axis direction in the two-dimensional spectrum corresponds to the linear beam incident on the wafer surface. The position of the film layer, the X-axis direction in the two-dimensional spectrum corresponds to the wavelength of the incident light corresponding to the position.
进一步地，所述光栅为反射式闪耀光栅，其最大光强为+1级次或-1级次。Further, the grating is a reflective blazed grating, and its maximum light intensity is +1 order or -1 order.
进一步地，所述聚焦光学系统为凹面镜或凸透镜，用于将二维光谱汇聚到所述图像传感器中。Further, the focusing optical system is a concave mirror or a convex lens, which is used for converging the two-dimensional spectrum into the image sensor.
进一步地，所述聚焦光栅单元为刻在凹面镜表面的光栅。Further, the focusing grating unit is a grating engraved on the surface of the concave mirror.
进一步地，所述线状光束到晶圆表面膜层的入射角为60-75°。Further, the incident angle of the linear beam to the film layer on the wafer surface is 60-75°.
本发明提供的一种进行膜厚测量的方法，包括如下步骤：A method for film thickness measurement provided by the present invention comprises the following steps:
S01：在晶圆表面上设定位于一条直线上的n个待测点，其中，n为大于等于1的整数；S01: Set n points to be measured on a straight line on the wafer surface, where n is an integer greater than or equal to 1;
S02：打开光源，宽光谱光源发出的光束经过光束整形器形成线状光束，所述线状光束覆盖所有待测点，线状光束依次经过固定起偏器和旋转起偏器进入晶圆表面的膜层，并在晶圆表面的膜层中发生反射和折射，线状光束经过膜层反射之后进入聚焦光栅单元，且所述聚焦光栅单元将反射之后的线状光束色散为二维光谱，且所述线状光束覆盖所有待测点，色散方向与所述线状光束的方向正交，所述二维光谱经过所述检偏器进入所述图像传感器，得到关于光强信号的二维光谱图像；所述二维光谱图像正交的两个方向分别对应所述线状光束入射到晶圆表面膜层中位置和该位置入射光的波长；S02: Turn on the light source, the beam emitted by the wide-spectrum light source passes through the beam shaper to form a linear beam, the linear beam covers all the points to be measured, and the linear beam enters the wafer surface through the fixed polarizer and the rotating polarizer in turn. The film layer is reflected and refracted in the film layer on the surface of the wafer, and the linear beam enters the focusing grating unit after being reflected by the coating layer, and the focusing grating unit disperses the reflected linear beam into a two-dimensional spectrum, and The linear beam covers all the points to be measured, the dispersion direction is orthogonal to the direction of the linear beam, the two-dimensional spectrum enters the image sensor through the analyzer, and a two-dimensional spectrum about the light intensity signal is obtained an image; the two orthogonal directions of the two-dimensional spectral image correspond to the position where the linear light beam is incident on the wafer surface film layer and the wavelength of the incident light at the position;
S03：对二维光谱图像中各个位置上的光强信号作傅里叶变换，并通过建模拟合得到n个待测点的膜层厚度S03: Perform Fourier transform on the light intensity signal at each position in the two-dimensional spectral image, and obtain the film thickness of n points to be measured by modeling and fitting
本发明的有益效果为：本发明中晶圆表面位于一条直线上不同的测量点和每个测量点各自的光谱信息在两个正交方向上展开，即Y方向的信号光在光栅表面发生X方向衍射，从而在XY平面内形成二维光强谱。该二维光强谱最终被图像传感器记录，根据每个位置的光强信号，可以计算出不同测量点的膜层厚度，本发明只需要一次测量和机械运动即可得出多个测量点的膜厚。The beneficial effects of the present invention are: in the present invention, the wafer surface is located at different measurement points on a straight line and the respective spectral information of each measurement point is expanded in two orthogonal directions, that is, the signal light in the Y direction generates X on the surface of the grating directional diffraction, resulting in a two-dimensional light intensity spectrum in the XY plane. The two-dimensional light intensity spectrum is finally recorded by the image sensor. According to the light intensity signal of each position, the film thickness of different measurement points can be calculated. The invention only needs one measurement and mechanical movement to obtain the thickness of multiple measurement points. film thickness.
附图说明Description of drawings
附图1为本发明一种测量膜厚的装置示意图。FIG. 1 is a schematic diagram of a device for measuring film thickness according to the present invention.
图中：1晶圆，2光源，3光束整形器，4固定起偏器，5旋转起偏器，6光栅，7二维光谱，8聚焦光学系统，9检偏器，10图像传感器。In the picture: 1 wafer, 2 light source, 3 beam shaper, 4 fixed polarizer, 5 rotating polarizer, 6 grating, 7 2D spectrum, 8 focusing optical system, 9 analyzer, 10 image sensor.
具体实施方式Detailed ways
为使本发明的目的、技术方案和优点更加清楚，下面结合附图对本发明的具体实施方式做进一步的详细说明。In order to make the objectives, technical solutions and advantages of the present invention clearer, the specific embodiments of the present invention will be further described in detail below with reference to the accompanying drawings.
如附图1所示，本发明提供的一种测量膜厚的装置，用于测量晶圆表面膜层的厚度；包括发射光束的宽光谱光源2、光束整形器3、固定起偏器4、旋转起偏器5、聚焦光栅单元、检偏器9和图像传感器10。光源2发出的宽光束经过光束整形器3形成线状光束，线状光束依次经过固定起偏器4和旋转起偏器5进入晶圆1表面的膜层，并在晶圆表面的膜层中发生反射和折射，线状光束经过膜层反射之后进入聚焦光栅单元，聚焦光栅单元将反射之后的线状光束色散为二维光谱7，且色散方向与线状光束所在直线的方向正交，二维光谱经过检偏器9进入图像传感器10，得到关于光强信号的二维光谱图像，二维光谱图像正交的两个方向分别对应线状光束入射到晶圆表面膜层中的位置和该位置对应入射光的波长；根据二维光谱图像上的光强信号得到晶圆表面对应位置的膜层厚度。As shown in FIG. 1, a device for measuring film thickness provided by the present invention is used to measure the thickness of the film layer on the wafer surface; it includes a wide-
本发明中宽光谱光源发射的光束的光谱范围至少覆盖400nm-800nm，典型地，如氙灯等气体光源。宽光谱光源指的是光源覆盖较宽的光谱范围。该宽光谱光源发射的光束经过光束整形器变为线状光束，设置在线状光束前方的固定起偏器和旋转起偏器用于控制探测光的偏振态。本发明中晶圆表面待测点位于一条直线上，且线状光束覆盖所有待测点，且光束到晶圆表面膜层的入射角为60-75°。The spectral range of the light beam emitted by the broad-spectrum light source in the present invention covers at least 400 nm-800 nm, typically, a gas light source such as a xenon lamp. Broad-spectrum light sources refer to light sources that cover a wide spectral range. The beam emitted by the wide-spectrum light source is transformed into a linear beam through a beam shaper, and a fixed polarizer and a rotating polarizer arranged in front of the linear beam are used to control the polarization state of the probe light. In the present invention, the points to be measured on the wafer surface are located on a straight line, the linear beam covers all the points to be measured, and the incident angle of the beam to the film layer on the wafer surface is 60-75°.
本发明中聚焦光栅单元可以为分开的括光栅6和聚焦光学系统8，如附图1所示，也可以直接将光栅刻在凹面镜表面，同时起到光栅和聚焦光学系统的功能，In the present invention, the focusing grating unit can be a
当本发明中包括光栅和聚焦光学系统，线状光束经过膜层反射之后进入光栅6，光栅6将反射之后的线状光束色散为二光谱7，二维光谱依次经过聚焦光学系统和检偏器进入图像传感器。光栅为一维光栅，且光栅的刻线方向为Y轴方向，光栅的刻线周期沿X轴方向；线状光束的方向对应Y轴方向。线状光束在一维光栅上发生色散，且色散方向为X轴方向，形成二维光谱；其中，二维光谱中Y轴方向对应线状光束入射到晶圆表面膜层的位置，二维光谱中X轴方向对应该位置入射光的波长。具体请参阅附图1，光栅在Y轴方向上的长度必须大于所有待测点之间的长度P1-Pn，待测点P1-Pn线段上的发射光经过光栅6衍射之后，在X轴方向上色散，其+1级次或-1级次形成的亮区为二维光谱7，代表了待测点XY平面内的光强分布。测量点P1的反射光经光栅6衍射后，其色散后的+1级次或-1级次为二维光谱7的左上角到右上角的线段；测量点Pn的反射光经光栅6衍射后，其色散后的+1级次或-1级次为二维光谱7的左下角到右下角的线段。因此二维光谱7每个位置的强度为I(x,y)，其x方向对应波长λi，y方向对应测量点Pj。其中，n表示n个待测点，j表示第j个待测点，且n为大于等于2的整数，j为小于等于n的整数。When the present invention includes a grating and a focusing optical system, the linear beam enters the
本发明中光栅可以为反射式闪耀光栅，其最大光强为+1级次或-1级次。聚焦光学系统为凹面镜或凸透镜，用于将二维光谱汇聚到图像传感器中。图像传感器也为二维图像传感器，其接收到的二维图像光谱与光栅散射之后的二维光谱相对应，并且该二维光谱需要完全呈现出光栅散射之后的必要的波长信息，即二维图像光谱在Y轴方向上的像素数大于等于晶圆表面待测点的个数，在X轴方向上的像素数大于等于所需测量的光谱范围，所需测量的光谱范围指的是数据拟合所必要的最大波长与最小波长的差值。In the present invention, the grating can be a reflective blazed grating, and its maximum light intensity is +1 order or -1 order. The focusing optics are concave or convex mirrors used to focus the two-dimensional spectrum into the image sensor. The image sensor is also a two-dimensional image sensor, and the two-dimensional image spectrum it receives corresponds to the two-dimensional spectrum after grating scattering, and the two-dimensional spectrum needs to fully present the necessary wavelength information after grating scattering, that is, the two-dimensional image The number of pixels in the Y-axis direction of the spectrum is greater than or equal to the number of points to be measured on the wafer surface, and the number of pixels in the X-axis direction is greater than or equal to the spectral range to be measured, which refers to the data fitting The difference between the maximum and minimum wavelengths required.
当本发明中焦光栅单元为刻在凹面镜表面的光栅时，光栅的具体要求同上述所述基本一致，只是将光栅和聚焦光学系统合在一起进行线状光束的散射和聚焦，在此不做详细说明。When the focal grating unit in the present invention is a grating engraved on the surface of a concave mirror, the specific requirements of the grating are basically the same as those described above, except that the grating and the focusing optical system are combined together to scatter and focus the linear beam, which is not discussed here. Make detailed instructions.
本发明提供的一种测量膜厚的方法，包括如下步骤：A method for measuring film thickness provided by the present invention comprises the following steps:
S01：在晶圆表面上设定位于一条直线上的n个待测点；S01: Set n points to be measured on a straight line on the wafer surface;
S02：打开宽光谱光源，光源发出的光束经过光束整形器形成线状光束，线状光束依次经过固定起偏器和旋转起偏器进入晶圆表面的膜层，并在晶圆表面的膜层中发生反射和折射，线状光束经过膜层反射之后进入聚焦光栅单元，且聚焦光栅单元将反射之后的线状光束色散为二维光谱，且线状光束覆盖所有待测点，色散方向与线状光束的方向正交，单色光经过检偏器进入图像传感器，得到关于光强信号的二维光谱图像；其中，线状光束的方向指的是线状光束所在直线的方向；二维光谱图像正交的两个方向分别对应线状光束入射到晶圆表面膜层中位置和该位置入射光的波长；S02: Turn on the wide-spectrum light source, the light beam from the light source passes through the beam shaper to form a linear beam, and the linear beam enters the film layer on the wafer surface through the fixed polarizer and the rotating polarizer in turn, and the film layer on the wafer surface Reflection and refraction occur in the light beam, the linear beam enters the focusing grating unit after being reflected by the film layer, and the focusing grating unit disperses the reflected linear beam into a two-dimensional spectrum, and the linear beam covers all the points to be measured, and the dispersion direction is related to the line The direction of the linear beam is orthogonal, and the monochromatic light enters the image sensor through the analyzer to obtain a two-dimensional spectral image of the light intensity signal; the direction of the linear beam refers to the direction of the straight line where the linear beam is located; the two-dimensional spectrum The two orthogonal directions of the image respectively correspond to the position where the linear beam is incident on the wafer surface film layer and the wavelength of the incident light at this position;
S03：对二维光谱图像中各个位置上的光强信号作傅里叶变换，并通过建模拟合得到n个待测点的膜层厚度。S03: Fourier transform is performed on the light intensity signal at each position in the two-dimensional spectral image, and the film thickness of n points to be measured is obtained by modeling and fitting.
二维光谱图像中每个位置的强度I(x,y)，其X方向对应波长λi，Y方向对应测量点Pj。因此探测到的光强信号I和初始光强I0之间的关系为I(x,y)＝I0f[λi,Pj,ωt,n(λi),k(λi),d]，其中λi为波长，Pj为第j个测量点，ωt表示偏振态的调制，n(λi)为该波长下的折射率，k(λi)为该波长下的消光系数，d为该测量点的膜厚。对其做傅里叶变换，可以得椭偏参数Ψ和Δ，对被测晶圆建立膜层结构模型和色散模型，利用该模型拟合每个测量点的偏振态的强度和相位变化，即椭偏参数Ψ和Δ，即可得到相应的膜厚。The intensity I(x, y) of each position in the two-dimensional spectral image corresponds to the wavelength λi in the X direction and the measurement point Pj in the Y direction. Therefore, the relationship between the detected light intensity signal I and the initial light intensity I0 is I(x,y)=I0 f[λi ,Pj ,ωt,n(λi ),k(λi ), d], where λi is the wavelength, Pj is the jth measurement point, ωt is the modulation of the polarization state, n(λi ) is the refractive index at this wavelength, and k(λi ) is the extinction coefficient at this wavelength , d is the film thickness at the measurement point. Fourier transform is performed on it, the ellipsometry parameters Ψ and Δ can be obtained, the film structure model and dispersion model can be established for the measured wafer, and the intensity and phase changes of the polarization state of each measurement point can be fitted by using the model, namely, The corresponding film thickness can be obtained by ellipsometry parameters Ψ and Δ.
值得说明的是，本发明中一条直线上不同的测量点和每个测量点各自的光谱信息在两个正交方向上展开，即Y方向的信号光在光栅表面发生X方向衍射，在XY平面内形成二维光谱。简单交换X和Y坐标轴的，亦应落在本发明所保护范围之内。It is worth noting that in the present invention, different measurement points on a straight line and the respective spectral information of each measurement point are expanded in two orthogonal directions, that is, the signal light in the Y direction is diffracted in the X direction on the grating surface, and the signal light in the XY plane is diffracted in the X direction. form a two-dimensional spectrum. Simply exchanging the X and Y coordinate axes should also fall within the protection scope of the present invention.
以上所述仅为本发明的优选实施例，所述实施例并非用于限制本发明的专利保护范围，因此凡是运用本发明的说明书及附图内容所作的等同结构变化，同理均应包含在本发明所附权利要求的保护范围内。The above descriptions are only preferred embodiments of the present invention, and the embodiments are not intended to limit the scope of patent protection of the present invention. Therefore, any equivalent structural changes made by using the contents of the description and drawings of the present invention shall be similarly included in the The invention is within the scope of protection of the appended claims.
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