Summary of the invention
The purpose of the present invention is to provide a kind of production methods of LED component, it is intended to solve the color reducibility of LED componentThe technical problem of difference.
The invention is realized in this way a kind of production method of LED component, comprising:
Lead frame is provided, and forms bracket on lead frame；The bracket includes the first groove and the second groove, and described theTwo grooves are connected to the first groove, and second groove is located at the top of first groove, and first groove has firstBottom surface, projection of first groove in the direction perpendicular to first bottom surface are located at second groove perpendicular to describedThe inside of the projection in the direction of the first bottom surface；The part of the lead frame is located in first groove；
Chip placement and the chip and the lead frame are electrically connected in first groove, it is recessed described firstThe first encapsulation glue-line is formed in slot and on the chip；
Heat-insulated glue-line is formed in second groove and on the first encapsulation glue-line；
Quantum dot layer is formed in second groove and on the heat-insulated glue-line；And
The second encapsulation glue-line is formed on the quantum dot layer.
In one embodiment, the heat-insulated glue-line is formed by inkjet printing methods.
In one embodiment, the quantum dot layer is formed by inkjet printing methods.
In one embodiment, the bracket further includes third groove, and the third groove is connected to the second groove, and describedThree grooves are located at the top of second groove, and the projection of second groove is located at the inside of the third groove；DescribedTwo encapsulation glue-lines are formed in the third groove.
In one embodiment, the second encapsulation glue-line is formed by inkjet printing methods.
In one embodiment, the material of the heat-insulated glue-line is transparent silica gel.
Another object of the present invention is to provide a kind of LED components, comprising:
Bracket, the bracket include the first groove and the second groove, and second groove is located at the upper of first grooveSide, second groove are connected to the first groove, and first groove has the first bottom surface, and first groove is perpendicular to instituteThe projection for stating the direction of the first bottom surface is located at second groove in the inside of the projection in the direction perpendicular to first bottom surface；
Lead frame is connected as one with the bracket and part is located in first groove；
Chip is set in first groove and is electrically connected with the lead frame；
First encapsulation glue-line, in first groove and covers the chip；
Heat-insulated glue-line in second groove and covers the first encapsulation glue-line；
Quantum dot layer in second groove and covers the heat-insulated glue-line；And
Second encapsulation glue-line, covers the quantum dot layer.
In one embodiment, the bracket further includes third groove, and the third groove is connected to the second groove, and describedThree grooves are located at the top of second groove, and projection of second groove in the direction perpendicular to first bottom surface is located atInside of the third groove in the direction perpendicular to first bottom surface；It is recessed that the second encapsulation glue-line is formed in the thirdIn slot.
In one embodiment, the chip is blue chip, and the quantum dot layer includes red light quantum point and green quantumPoint.
In one embodiment, the material of the heat-insulated glue-line is transparent silica gel.
The production method of LED component provided by the invention, bracket include interconnected the first groove and the second groove,Second groove is located at the top of the first groove and core is arranged in the projection of the first groove in the inside of the second groove, the first groovePiece and the first encapsulation glue-line form heat-insulated glue-line and quantum dot layer on the second groove and the first encapsulation glue-line, and in quantum dotThe second encapsulation glue-line is formed on layer, heat-insulated glue-line makes quantum dot layer from the influence from chip and the heat of lead frame, quantumPoint layer can convert the light that chip issues, and quantum dot is small to the interference for the light that chip issues, and obtains in this wayLED component is used for liquid crystal reduction technique, enables to that the colour gamut of liquid crystal display is wider, color saturation is high, and picture more connectsIt is close true, improve user's visual experience.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to the accompanying drawings and embodiments, rightThe present invention is further elaborated.It should be appreciated that described herein, specific examples are only used to explain the present invention, notFor limiting the present invention.
It should be noted that when component is referred to as " being fixed on " or " being set to " another component, it can directly orIt connects on another component.When a component is known as " being connected to " another component, it be can be directly or indirectlyIt is connected on another component.The orientation or positional relationship of the instructions such as term " on ", "lower", "left", "right" is based on attached drawingShown in orientation or positional relationship, be merely for convenience of describing, rather than the device or element of indication or suggestion meaning must haveThere is specific orientation, be constructed and operated in a specific orientation, therefore should not be understood as the limitation to this patent.Term " first "," second " is used merely to facilitate description purpose, is not understood to indicate or imply relative importance or implicitly indicates technical characteristicQuantity.The meaning of " plurality " is two or more, unless otherwise specifically defined.
In order to illustrate technical solutions according to the invention, it is described in detail below in conjunction with specific accompanying drawings and embodiments.
Referring to Figure 1 to Figure 11, present invention firstly provides a kind of production methods of LED component, comprising the following steps:
Step S1 provides lead frame 1 as shown in Figures 2 to 4, and bracket 2 is formed on lead frame 1.
As shown in figure 3, lead frame 1 includes two electrode pins 10, two interval of electrode pin 10 settings, the company of being respectively used toConnect the positive and negative anodes of external power supply.
Bracket 2 is formed on lead frame 1 by injection molding manner.Specifically, first lead frame 1 is put into mold and is fixed,Then the plastic material of melting is injected in mold using Shooting Technique, so that bracket 2 is connected as one with lead frame 1.BranchFrame 2 will be relatively fixed between two spaced electrode pins 10.
There is the first bottom surface 211, a part setting close to each other between two electrode pins 10 inside first groove 21On the first bottom surface 211.
As shown in Figure 2 and Figure 5, bracket 2 includes the first groove 21, the second groove 22 and third groove 23, wherein second is recessedSlot 22 is formed in the top of the first groove 21 and is connected to the first groove 21, and third groove 23 is formed in the top of the second groove 22And be connected to the second groove 22, the first groove 21 is located in the second groove 22 in the projection on the direction perpendicular to the first bottom surface,Second groove 22 is located in third groove 23 in the projection on the direction perpendicular to the first bottom surface.That is, being seen from the top of bracket 2It examines, the first groove 21 is exposed in the first groove 21, and the second groove 22 is exposed in third groove 23 again.
In one embodiment, the first groove 21, the second groove 22 and third groove 23 are cylindrical, the first groove 21It is overlapped with the central axis of the second groove 22, the diameter of third groove 23 is greater than the diameter of the second groove 22, the second groove 22Diameter be greater than the first groove 21 diameter.
Second groove 22 is formed with cricoid second bottom surface 221 in 21 periphery of the first groove, and third groove 23 is recessed secondThe periphery of slot 22 is formed with cricoid third bottom surface 231.
Step S2, as shown in fig. 6, forming reflecting layer 3 in the first groove 21 and on lead frame 1, and the shape on reflecting layer 3At bottom package glue-line 4.
3 one side of reflecting layer is used to be electrically connected with lead frame 1, is on the other hand used for reflection light, and reflecting layer 3 is metalMaterial, such as silver.Bottom package glue-line 4 for protecting reflecting layer 3 can be also used for that the material in reflecting layer 3 is prevented to be oxidized.Bottom packageThe material of glue-line 4 can be transparent silica gel.
The pad 30 for protruding from bottom substratum transparent is also formed on reflecting layer 3.
Step S3, as shown in fig. 7, the chip placement 5 in the first groove 21, and the both ends of chip 5 are distinguished by gold threadIt is connected to the pad 30 of two electrode pins 10, to realize the electric connection of chip 5 and two electrode pins 10.
Chip 5 is for emitting beam, according to the difference of 5 material of chip, the light of capable of emitting different colours.
In one embodiment, chip 5 is blue chip 5, including gallium nitride material, is received for issuing peak wavelength for 465The blue light of rice.
Step S4, as shown in figure 8, the colloid of the first transparent encapsulation material is perfused in the first groove 21 and on chip 5, GuThe first encapsulation glue-line 6 is formed after change.First transparent encapsulation material can be transparent silica gel.
Optionally, the first encapsulation glue-line 6 reaches the top edge of the first groove 21.
Step S5, as shown in figure 9, forming heat-insulated glue-line 7 on the second groove 22 and the first encapsulation glue-line 6.
The step uses InkJet printing processes.Specifically, transparent heat-barrier material is equably sprayed at the first encapsulated layerSurface on, heat-insulated glue-line 7 is obtained after solidification.Optionally, the edge of heat-insulated glue-line 7 is set on the second bottom surface 221.TransparentHeat-barrier material can be transparent silica gel.
Second groove 22 of bracket 2 plays the role of the transparent heat-insulated material of limitation, can be completely covered by firstOn encapsulated layer.
Step S6 forms quantum dot layer 8 as shown in Figure 10 in the second groove 22 and on heat-insulated glue-line 7.
The step uses InkJet printing processes.Specifically, the solution containing quanta point material is equably sprayed at firstOn the surface of encapsulated layer, quantum dot layer 8 is obtained after drying and curing.InkJet printing processes can be avoided the wave of quanta point materialTake, save quanta point material and quanta point material is made to be evenly distributed.
Optionally, the edge of quantum dot layer 8 reaches the top edge of the second groove 22.
Second groove 22 of bracket 2 also acts the effect of the solution flowing of limitation quanta point material, makes quanta point materialIt can be completely covered on heat-insulated glue-line 7.
Quantum dot refers to the structure that semiconductor material is mutually gradually decrease to after certain critical dimension (1~20nm) from body,The fluctuation of carrier becomes significantly, and movement will be limited, and leads to the increase of kinetic energy, and corresponding electronic structure is from the consecutive energy of bodyLevel structure becomes the discontinuous of quasi- division, this phenomenon is referred to as quantum size effect.Relatively common semi-conductor nano particles areQuantum dot mainly has II-VI group, II-V race and a group IV-VI quantum dot, absorb and the wavelength of transmitting with its own sizeChange and changes.Also, quanta point material is concentrated with luminescent spectrum, and excitation purity is high and luminescent color can be easy to pass through quantumThe advantages that size, structure or the ingredient of point material are simply adjusted, the colour gamut and color that can effectively promote display device are alsoProper energy power.
Specifically, quanta point material includes one of II-VI group quanta point material, iii-v quanta point material or moreKind, such as one in ZnCdSe2 (selenium cadmium zinc), CdSe (cadmium selenide), CdTe (cadmium telluride), InP (indium phosphide), InAs (indium arsenide)Kind is a variety of.
In one embodiment, quantum dot includes that can absorb blue light and emit the red light quantum point of feux rouges and can inhaleIt receives blue light and emits the quantum dot of green light.The luminous nucleon of red light quantum point shines having a size of 5.0~5.5nm, green light quantum pointCore is having a size of 3.0~3.5nm.Blue light a part that blue chip 5 issues is converted to feux rouges and green light, another part by quantum dotAfter mixing with feux rouges and green light, white light is obtained.
Optionally, the quantum dot layer 8 of formation with a thickness of 0.5~5 μm.
Due to being equipped with thermal insulation layer between quantum dot layer 8 and the first encapsulation glue-line 6, chip 5 and lead can be effectively prevented fromThe heat of frame 1 influences the property of quanta point material in quantum dot layer 8, avoids the luminescent properties for influencing the LED component.
Step S7 forms the second encapsulation glue-line 9 as shown in figure 11 in third groove 23 and on quantum dot layer 8.
The second encapsulation glue-line 9 is for protecting quantum dot layer 8.Specifically, also by the way of inkjet printing, thoroughly by secondBright encapsulating material is equably sprayed on quantum dot layer 8, and third groove 23 plays the role of limiting the second transparent encapsulation material,Quantum dot layer 8 can be completely covered in the second encapsulation glue-line 9 obtained after solidification.Second transparent encapsulation material can be transparent siliconGlue.
A LED component 100 is obtained as a result, and the light that chip 5 issues is emitted after the conversion of quantum dot layer 8, quantum dot layerThe wavelength interference for the light that 8 pairs of chips 5 issue is small, which, which is applied to liquid crystal reduction technique, effectively to be promotedThe colour gamut and color restoration capability of display device, improve the color saturation of the picture of display device.
The present invention also provides a kind of LED components 100, as shown in figure 12, by the production of above-mentioned described LED component 100It is obtained made by method.Specifically, which includes bracket 2, the lead frame 1 being connected with bracket 2 and is set toReflecting layer 3, bottom package glue-line 4, chip 5, first in bracket 2 encapsulate glue-line 6, heat-insulated glue-line 7, quantum dot layer 8 and the second envelopeFill glue-line 9.
Specifically, it can refer to shown in above-mentioned Fig. 3, lead frame 1 includes two electrode pins 10, between two electrode pins 10Every setting, it is respectively used to the positive and negative anodes of connection external power supply.
Bracket 2 is formed on lead frame 1 by injection molding manner, so that bracket 2 is connected to one with lead frame 1.BranchFrame 2 will be relatively fixed between two spaced electrode pins 10.
There is the first bottom surface 211, a part setting close to each other between two electrode pins 10 inside first groove 21On the first bottom surface 211.
It can refer to shown in above-mentioned Fig. 2 and Fig. 5, bracket 2 includes the first groove 21, the second groove 22 and third groove 23,Wherein the second groove 22 is formed in the top of the first groove 21 and is connected to the first groove 21, and it is recessed that third groove 23 is formed in secondThe top of slot 22 is simultaneously connected to the second groove 22, and projection of first groove 21 on the direction perpendicular to the first bottom surface is located at secondIn groove 22, the second groove 22 is located in third groove 23 in the projection on the direction perpendicular to the first bottom surface.That is, from bracket2 top observation, the first groove 21 are exposed in the first groove 21, and the second groove 22 is exposed in third groove 23 again.
First groove 21, the second groove 22 and third groove 23 are cylindrical, the first groove 21 and the second groove 22Central axis be overlapped, the diameter of third groove 23 is greater than the diameter of the second groove 22, and the diameter of the second groove 22 is greater than theThe diameter of one groove 21.
Second groove 22 is formed with cricoid second bottom surface 221 in 21 periphery of the first groove, and third groove 23 is recessed secondThe periphery of slot 22 is formed with cricoid third bottom surface 231.
It is formed with reflecting layer 3 on two electrode pins 10 in first groove 21, bottom package glue-line 4 is formed on reflecting layer 3.
3 one side of reflecting layer is used to be electrically connected with lead frame 1, is on the other hand used for reflection light, and reflecting layer 3 is metalMaterial, such as silver.Bottom package glue-line 4 can be also used for that the material in reflecting layer 3 is prevented to be oxidized, material for protecting reflecting layer 3It can be transparent silica gel.
The pad 30 for protruding from bottom package glue-line 4 is also formed on reflecting layer 3.
The both ends of chip 5 are respectively connected to the pad 30 on reflecting layer 3 by gold thread, to realize chip 5 and two electrodesThe electric connection of pin 10.
Chip 5 is for emitting beam, according to the difference of 5 material of chip, the light of capable of emitting different colours.
In one embodiment, chip 5 is blue chip 5, including gallium nitride material, is received for issuing peak wavelength for 465The blue light of rice.
First encapsulation glue-line 6 is formed in the first groove 21 and on chip 5, and material can be transparent silica gel.
In one embodiment, the first encapsulation glue-line 6 reaches the top edge of the first groove 21.
Heat-insulated glue-line 7 is formed in the second groove 22 and encapsulates on glue-line 6 with first.The material of the heat-insulated glue-line 7 can beTransparent silica gel.Optionally, the edge of heat-insulated glue-line 7 is formed on the second bottom surface 221.
Quantum dot layer 8 is formed in the second groove 22 and on heat-insulated glue-line 7.Optionally, the edge of quantum dot layer 8 reaches theThe top edge of two grooves 22.
Specifically, quanta point material includes one of II-VI race's quanta point material, III-V race quanta point material or moreKind, such as one of ZnCdSe2, CdSe, CdTe, InP, InAs or a variety of.
In one embodiment, quantum dot includes that can absorb blue light and emit the red light quantum point of feux rouges and can inhaleIt receives blue light and emits the quantum dot of green light.The luminous nucleon of red light quantum point shines having a size of 5.0~5.5nm, green light quantum pointCore is having a size of 3.0~3.5nm.Blue light a part that blue chip 5 issues is converted to feux rouges and green light, another part by quantum dotAfter mixing with feux rouges and green light, white light is obtained.
Optionally, quantum dot layer 8 with a thickness of 0.5~5 μm.
Due to being equipped with thermal insulation layer between quantum dot layer 8 and the first encapsulation glue-line 6, chip 5 and lead can be effectively prevented fromThe heat of frame 1 influences the property of quanta point material in quantum dot layer 8, avoids the luminescent properties for influencing the LED component 100.
Second encapsulated layer 9 is formed in third groove 23 and on quantum dot layer 8.
For second encapsulated layer 9 for protecting quantum dot layer 8, material can be transparent silica gel.
LED component 100 provided in an embodiment of the present invention, the light that chip 5 issues are emitted after the conversion of quantum dot layer 8,Quantum dot layer 8 is small to the wavelength interference for the light that chip 5 issues, which, which is applied to liquid crystal reduction technique, to haveEffect ground promotes the colour gamut and color restoration capability of display device, improves the color saturation of the picture of display device.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all in essence of the inventionMade any modifications, equivalent replacements, and improvements etc., should all be included in the protection scope of the present invention within mind and principle.