CN109087841B

Movatterモバイル変換

Info

Publication number: CN109087841B
Application number: CN201710447343.6A
Authority: CN
Inventors: 李璐
Original assignee: Beijing North Microelectronics Co Ltd
Current assignee: Beijing North Microelectronics Co Ltd
Priority date: 2017-06-14
Filing date: 2017-06-14
Publication date: 2020-02-11
Anticipated expiration: 2037-06-14
Also published as: CN109087841A

Abstract

The invention provides a reaction chamber and semiconductor processing equipment, which comprise a cavity, wherein a base used for bearing a processed workpiece is arranged in the cavity, a process sleeve is arranged above the base, and plasma is diffused to the surface of the processed workpiece through the process sleeve. The technical sleeve comprises a plurality of sub-baffles which are sequentially arranged to form a ring body, and the upper end of each sub-baffle is rotatably connected with the cavity; the size of the lower end opening of the ring body is adjusted by changing the inclination angle of each sub-baffle relative to the vertical direction. The reaction chamber provided by the invention not only can improve the process efficiency and reduce the equipment cost, but also can improve the flexibility of process result optimization.

Description

Reaction chamber and semiconductor processing equipment

Technical Field

The invention relates to the technical field of semiconductor manufacturing, in particular to a reaction chamber and semiconductor processing equipment.

Background

In recent years, with the expanding application of micro-electromechanical device systems in the field of consumer electronics and the broad prospect of TSV (through Silicon vias) through hole etching technology in the future packaging field, the dry plasma deep Silicon etching process gradually becomes one of the mainstream processes in the micro-electromechanical processing field and the TSV technology, and the dry plasma deep Silicon etching process has a plasma source for generating high-energy plasma and bombards a wafer under the guidance of a lower bias system, so that a series of physical and chemical actions are generated on the surface of the wafer.

Referring to fig. 1, which is a cross-sectional view of a conventional reaction chamber, thereaction chamber 100 includes a chamber body in which asusceptor 104 for carrying awafer 103 is disposed. And, there is a top wall opening on thetop wall 101 of the cavity, there is a plasma source above the top wall opening, the plasma source includes amedium cylinder 105 and aradio frequency coil 106 surrounding themedium cylinder 105, and the process gas in themedium cylinder 105 is excited to form plasma by applying radio frequency power to theradio frequency coil 106. The plasma diffuses downwardly into the chamber 1 through the top wall opening and reaches the surface of thewafer 103. In order to confine the process gas and the plasma above thewafer 103, aprocess sleeve 102 is further disposed in the chamber 1, and as shown in fig. 2, theprocess sleeve 102 is a cone-shaped ring, and has a lower opening smaller than an upper opening to converge the plasma.

However, the above-mentioned process sleeves are fixed in size, which makes it necessary to design process sleeves of different sizes for wafers of different diameters, resulting in high equipment cost, and also makes it necessary to replace the process sleeves when wafers of different diameters are processed in the same reaction chamber, so that the size of the process sleeves matches the diameter of the wafers, which affects process efficiency. In addition, in the process debugging process, the process sleeve with fixed size does not have the process adjusting capacity.

Disclosure of Invention

The invention aims to at least solve one of the technical problems in the prior art, and provides a reaction chamber and semiconductor processing equipment, which not only can improve the process efficiency and reduce the equipment cost, but also can improve the flexibility of process result optimization.

The reaction chamber comprises a cavity, wherein a base used for bearing a processed workpiece is arranged in the cavity, a process sleeve is arranged above the base, plasma is diffused to the surface of the processed workpiece through the process sleeve, the process sleeve comprises a plurality of sub-baffles which are sequentially arranged to form a ring body, and the upper end of each sub-baffle is rotatably connected with the cavity;

the size of the lower end opening of the ring body is adjusted by changing the inclination angle of each sub baffle relative to the vertical direction.

Preferably, the plurality of sub-baffles are divided into a first sub-baffle group and a second sub-baffle group, and the number of the sub-baffles is the same;

the sub-baffles in the first sub-baffle group and the sub-baffles in the second sub-baffle group are arranged at intervals along the circumferential direction of the ring body, and the side edge of any one sub-baffle in the first sub-baffle group is partially overlapped or butted with the side edge of the adjacent sub-baffle in the second sub-baffle group.

Preferably, the ring body is a conical ring body, and the lower end opening of the ring body is smaller than the upper end opening of the ring body.

Preferably, the technology sleeve still includes solid fixed ring, gu fixed ring with the roof fixed connection of cavity, and gu fixed ring is last, and it has a plurality of rotation axes to distribute along its circumference, every the rotation axis is followed gu fixed ring's circumference tangent line sets up, and can rotate, each the rotation axis one-to-one with each the upper end fixed connection of sub-baffle.

Preferably, an adjusting piece is further arranged in the cavity, through holes are formed in the adjusting piece, and each sub baffle is located in the through hole and is in contact with the inner edge of the through hole under the action of self gravity;

all the sub baffles are driven to rotate synchronously by enabling the adjusting piece to ascend or descend so as to change the inclination angle of each sub baffle relative to the vertical direction.

Preferably, the reaction chamber further comprises a lifting mechanism for driving the adjusting member to ascend or descend.

Preferably, the elevating mechanism includes a driving shaft, an elevating driving source, and a fixing bracket, wherein,

the lifting driving source is fixed above the top wall of the cavity through the fixed support;

the upper end of drive shaft with the lift driving source is connected, the lower extreme of drive shaft is vertical to run through downwards the roof of cavity, extend to in the cavity, and with adjusting part fixed connection.

Preferably, the elevating driving source includes an elevating cylinder or an elevating motor.

Preferably, the lifting mechanism further comprises a corrugated pipe, and the corrugated pipe is sleeved outside the driving shaft and used for sealing a gap between the driving shaft and the top wall of the cavity.

Preferably, a top wall opening is formed in the top wall of the cavity, the upper end opening of the ring body corresponds to the top wall opening, and a plasma source is arranged above the top wall opening and used for generating the plasma.

Preferably, the plasma source comprises a dielectric cylinder and a radio frequency coil surrounding the dielectric cylinder, and the process gas in the dielectric cylinder is excited to form the plasma by applying radio frequency power to the radio frequency coil.

As another technical solution, the present invention further provides a semiconductor processing apparatus, including the reaction chamber provided by the present invention.

The invention has the following beneficial effects:

according to the reaction chamber provided by the invention, the process sleeve comprises the plurality of sub-baffles which are sequentially arranged to form the ring body, the upper end of each sub-baffle is rotatably connected with the cavity, and the size of the opening at the lower end of the ring body is adjusted by changing the inclination angle of each sub-baffle relative to the vertical direction, so that the process sleeve can be matched with the processed workpieces with different diameters, the process sleeve does not need to be replaced, the process efficiency can be improved, and the single process sleeve can adapt to the processed workpieces with various diameters, so that the equipment cost can be reduced. In addition, the size of the lower end opening of the ring body is adjusted by changing the inclination angle of each sub-baffle relative to the vertical direction in the process of process debugging, and the diffusion path of plasma and process gas can be controlled, so that the process sleeve has process adjusting capacity, and the flexibility of optimizing process results is improved.

According to the semiconductor processing equipment provided by the invention, by adopting the reaction chamber provided by the invention, the process efficiency can be improved, the equipment cost can be reduced, and the flexibility of process result optimization can be improved.

Drawings

FIG. 1 is a cross-sectional view of a conventional reaction chamber;

FIG. 2 is a block diagram of a prior art sleeve;

FIG. 3 is a cross-sectional view of a reaction chamber provided in accordance with an embodiment of the present invention;

FIG. 4 is a schematic view of the inside of a process sleeve used in an embodiment of the present invention;

FIG. 5 is a side view of a process sleeve used in an embodiment of the present invention;

fig. 6 is an enlarged view of the area a in fig. 3.

Detailed Description

In order to make those skilled in the art better understand the technical solution of the present invention, the reaction chamber and the semiconductor processing apparatus provided by the present invention will be described in detail below with reference to the accompanying drawings.

Referring to fig. 3 and 4, thereaction chamber 200 of the present embodiment includes achamber 201 and a plasma source, wherein asusceptor 203 for carrying aworkpiece 204 to be processed is disposed in thechamber 201, atop wall 202 of thechamber 201 is provided with a top wall opening, and a plasma source is disposed above the top wall opening for generating plasma, and the plasma diffuses downward into thechamber 201 through the top wall opening. Specifically, the plasma source includes amedia cartridge 207 and anrf coil 206 surrounding themedia cartridge 207, and the process gas within themedia cartridge 207 is excited to form a plasma by applying rf power to therf coil 206. Therf coil 206 may be loaded with rf power through a matcher by a rf power supply. Theradio frequency coil 206 may be a cylindrical solid bolt coil. Preferably, acooling support assembly 208 is also disposed around therf coil 206 for cooling therf coil 206 and themedia cartridge 207.

Further, asusceptor 203 for supporting aworkpiece 204 to be processed is provided in thechamber 201, and aprocess sleeve 205 is provided above thesusceptor 203, and the plasma is diffused to the surface of theworkpiece 204 to be processed through theprocess sleeve 205. Theprocess sleeve 205 may focus the plasma. In this embodiment, theprocess sleeve 205 includes a plurality of sub-baffles, which are sequentially arranged to form a ring. The ring body is a conical ring body, and the lower end opening of the ring body is smaller than the upper end opening of the ring body so as to play a role in converging plasma.

Preferably, as shown in fig. 4, the plurality of sub baffles are divided into a first sub baffle group and a second sub baffle group, the number of the sub baffles is the same as that of the first sub baffle group, thesub baffles 214 in the first sub baffle group and thesub baffles 215 in the second sub baffle group are arranged at intervals along the circumferential direction of the ring body, and the side edge of any onesub baffle 214 in the first sub baffle group is partially overlapped with the side edge of thesub baffle 215 in the second sub baffle group adjacent to the first sub baffle group, so that the ring body formed by the plurality of sub baffles is continuous in the circumferential direction, thereby preventing plasma from leaking out from between the two adjacent sub baffles, and further ensuring the effect of collecting plasma. Of course, the side edge of any onesub-baffle 214 in the first sub-baffle group and the side edge of thesub-baffle 215 in the second sub-baffle group adjacent to the first sub-baffle group can be butted with each other, which can also avoid plasma leakage.

And, the upper end of each sub barrier is rotatably connected with thechamber 201. Specifically, in this embodiment, theprocess sleeve 205 further includes afixing ring 212, thefixing ring 212 is fixedly connected to thetop wall 202 of thecavity 201, and a plurality of rotatingshafts 216 are distributed on thefixing ring 212 along the circumferential direction thereof, eachrotating shaft 216 is arranged along a circumferential tangent of thefixing ring 212 and can rotate, and each rotatingshaft 216 is fixedly connected to the upper end of each sub-baffle in a one-to-one correspondence manner, so that the upper end of each sub-baffle is rotatably connected to thecavity 201. By arranging eachrotating shaft 216 along the circumferential tangent of thefixing ring 212, it can be ensured that each sub-baffle can form a ring body at the same any one inclination angle.

Through making the upper end of every sub-baffle rotate, can adjust the lower extreme opening size of above-mentioned ring body for vertical direction's inclination through changing each sub-baffle to no longer needchange technology sleeve 205, just can with themachined work piece 204 phase-match of different diameters, and then can improve process efficiency. Moreover, asingle process sleeve 205 can accommodate multiple diameters ofworkpieces 204 being processed, thereby reducing equipment costs. In addition, the size of the lower end opening of the ring body is adjusted by changing the inclination angle of each sub-baffle relative to the vertical direction in the process of process debugging, and the diffusion path of plasma and process gas can be controlled, so that the process sleeve has process adjusting capacity, and the flexibility of optimizing process results is improved.

As shown in fig. 3 to 5, an adjustingmember 213 is further disposed in thechamber 201, and a through hole is disposed in the adjustingmember 213, and each sub barrier is located in the through hole and contacts with an inner edge of the through hole under the action of its own gravity, so that the adjustingmember 213 can limit each sub barrier at a certain inclination angle. Further, by raising or lowering theadjuster 213, all the sub shutters are driven to rotate synchronously, and the inclination angle of each sub shutter with respect to the vertical direction can be changed. As shown in fig. 3, when the adjustingmember 213 descends from the position B to the position C, each sub flapper rotates to the dotted line position toward the outside by its own weight, the inclination angle of each flapper with respect to the vertical direction decreases, so that the diameter of the lower end opening of the ring body increases. From this, it is understood that the diameter of the lower end opening of the ring body can be increased by lowering theadjuster 213; conversely, by making the adjustingmember 213 as described above, the diameter of the lower end opening of the ring body can be reduced.

In this embodiment, the reaction chamber further comprises a lifting mechanism for driving the adjustingmember 213 to move up or down, so as to automatically control the movement of the adjustingmember 213. Specifically, as shown in fig. 6, in the present embodiment, the elevating mechanism includes a drivingshaft 211, an elevatingdriving source 209, and a fixingbracket 210, wherein the elevating drivingsource 209 is fixed above thetop wall 202 of thechamber 201 by the fixingbracket 210. The elevatingdriving source 209 may include an elevating cylinder or an elevating motor, etc. The upper end of the drivingshaft 211 is connected to the elevating drivingsource 209, and the lower end of the drivingshaft 211 vertically penetrates thetop wall 202 of thechamber 201 downward, extends into thechamber 201, and is fixedly connected to the adjustingmember 213.

In this embodiment, the adjustingmember 213 includes a horizontal extension portion, which extends horizontally to the lower side of the drivingshaft 211, and a stud 218 is disposed at the lower end of the drivingshaft 211, the stud 218 vertically penetrates the horizontal extension portion downward, and the nut 219 is engaged with the stud 218 to fixedly connect the horizontal extension portion with the drivingshaft 211. Of course, in practical applications, the adjustingmember 213 and the drivingshaft 211 may be fixedly connected in any other manner.

Preferably, in order to ensure that the inside of thechamber 201 is in a vacuum state, the lifting mechanism further comprises a bellows 217, and the bellows 217 is sleeved outside the drivingshaft 211 to seal a gap between the drivingshaft 211 and thetop wall 202 of thechamber 201.

As another technical solution, an embodiment of the present invention further provides a semiconductor processing apparatus, which includes the reaction chamber provided in the embodiment of the present invention.

According to the semiconductor processing equipment provided by the embodiment of the invention, the reaction chamber provided by the embodiment of the invention is adopted, so that the process efficiency can be improved, the equipment cost can be reduced, and the flexibility of process result optimization can be improved.

It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.

Claims

1. A reaction chamber comprises a cavity body, wherein a base used for bearing a processed workpiece is arranged in the cavity body, a process sleeve is arranged above the base, and plasma is diffused to the surface of the processed workpiece through the process sleeve;

2. The reaction chamber of claim 1, wherein the plurality of sub-baffles is divided into a first sub-baffle group and a second sub-baffle group, and the number of the sub-baffles is the same;

3. The reaction chamber of claim 1, wherein the ring body is a conical ring body, and a lower end opening of the ring body is smaller than an upper end opening of the ring body.

4. The reaction chamber as claimed in claim 1, wherein the process sleeve further comprises a fixing ring fixedly connected to the top wall of the cavity, and a plurality of rotating shafts are distributed on the fixing ring along a circumferential direction thereof, each rotating shaft is arranged along a circumferential tangent of the fixing ring and is capable of rotating, and each rotating shaft is fixedly connected to an upper end of each sub-baffle in a one-to-one correspondence.

5. The reaction chamber as claimed in any one of claims 1 to 4, wherein an adjusting member is further disposed in the chamber, a through hole is disposed on the adjusting member, and each sub-baffle is located in the through hole and contacts with an inner edge of the through hole under the action of its own gravity;

6. The reaction chamber of claim 5, further comprising a lift mechanism for driving the adjustment member to ascend or descend.

7. The reaction chamber of claim 6, wherein the lift mechanism comprises a drive shaft, a lift drive source, and a stationary support, wherein,

8. The reaction chamber of claim 7, wherein the lift drive source comprises a lift cylinder or a lift motor.

9. The reaction chamber of claim 7, wherein the lifting mechanism further comprises a bellows disposed outside the drive shaft for sealing a gap between the drive shaft and a top wall of the chamber body.

10. The reaction chamber as claimed in any one of claims 1 to 4, wherein a top wall opening is provided on the top wall of the chamber body, the upper end opening of the ring body corresponds to the top wall opening, and a plasma source for generating the plasma is provided above the top wall opening.

11. The reaction chamber of claim 10 wherein the plasma source comprises a media cartridge and a radio frequency coil surrounding the media cartridge, the process gas within the media cartridge being excited to form the plasma by applying radio frequency power to the radio frequency coil.

12. A semiconductor processing apparatus comprising a reaction chamber according to any one of claims 1 to 11.