CN108962942B - PM-OLED display capable of automatically adjusting brightness and manufacturing method thereof - Google Patents

Abstract

The invention relates to a PM-OLED display capable of automatically adjusting brightness and a manufacturing method thereof. A PM-OLED display capable of automatically adjusting brightness comprises a device substrate formed with a light emitting device structure, a rear cover attached to the device substrate in an alignment mode through a sealing frame, and a photosensitive device structure located in a region between the sealing frame and an effective display area and connected in series on a Vcc lead or a Vpp lead circuit between a driving IC and an FPC. The display integrates the photoresistor structure in the blank area of the non-display area in the display, the basic structure of the display does not need to be re-modified, the photoresistor structure is not required to be embedded into a TFT pixel structure like an AM-OLED display, an external photosensitive sensor and an external circuit are not required, the circuit of the photoresistor structure of the invention needs to use an FPC circuit of the display as a jumper wire, the structure is simple, the integration level is high, and the cost is lower.

Description

PM-OLED display capable of automatically adjusting brightness and manufacturing method thereof

Technical Field

The invention relates to the field of PM-OLED displays, in particular to a PM-OLED display capable of automatically adjusting brightness and a manufacturing method thereof.

Background

The OLED display is a display made using organic electroluminescent diodes. Since the OLED has self-luminous characteristics, it does not need a backlight, has high contrast, thin thickness, wide viewing angle, fast response speed, can be made into a flexible display panel, has a wide temperature range, and is a new application technology for the next generation of flat panel displays. The OLED industry has a very wide prospect, and enterprises in the industry are also striving to accumulate development experience, but factors such as a weak upstream link of a domestic industrial chain and a lack of matching capability of the industry create a large development obstacle for manufacturers.

The prior electronic product carrying the PM-OLED display cannot automatically adjust the brightness of the device under the condition of not carrying an external photosensitive device and a circuit in the environment with different brightness (illumination intensity). To solve the above problems and achieve this function, the present invention provides a fabrication method for integrating a photo-resistive device into a PM-OLED display box.

Disclosure of Invention

The invention aims to solve the technical problem that the brightness of a device can not be automatically adjusted under the condition that an external photosensitive device and a circuit are not carried in a PM-OLED display in the prior art. The novel PM-OLED display capable of automatically adjusting the brightness is provided, and has the characteristics of simple structure and capability of automatically adjusting the brightness of a device under the condition that an external photosensitive device and a circuit are not mounted; the display of the invention integrates the photoresistor structure in the blank area of the non-display area in the display, does not need to revise the basic structure of the display again, does not need to embed the photoresistor structure into the TFT pixel structure like the AM-OLED display, so that the structural design of the display becomes complicated, and the cost and efficiency problems of exposure equipment with high precision (less than or equal to 3 mu m) and expensive high-precision MASK are needed in the manufacturing process, and does not need an external photosensitive sensor and an external circuit.

In order to solve the technical problems, the technical scheme is as follows:

the PM-OLED display capable of automatically adjusting brightness comprises a device substrate with a light-emitting device structure, a rear cover attached to the device substrate in an alignment mode through a sealing frame, and a photosensitive device structure located in an area between the sealing frame and an effective display area and connected in series on a Vcc lead or a Vpp lead line between a driving IC and an FPC.

As an improvement of the PM-OLED display capable of automatically adjusting brightness, the photosensitive device structure is manufactured in the area between the outer edge of the effective display area and the sealing frame before the device substrate and the rear cover are packaged.

The photosensitive device structure is manufactured in an area between an outermost peripheral functional wire connected with a pixel electrode and a sealing frame before a device substrate and a rear cover are packaged.

As an improvement of the PM-OLED display capable of automatically adjusting brightness provided by the invention, the number of the photosensitive device structures is at least one.

As an improvement of the PM-OLED display capable of automatically adjusting brightness, the photosensitive device structure is a photosensitive device structure with a comb-shaped or spiral-shaped or convoluted conductive material layer.

As an improvement of the PM-OLED display for automatically adjusting brightness provided by the present invention, the photosensitive device structure includes a positive electrode and a negative electrode matched with each other, an insulating layer covering the positive electrode and the negative electrode, and a photoelectric material layer and a conductive material layer located above the insulating layer, wherein the insulating layer is provided with at least two via holes to expose a portion of the positive electrode and the negative electrode, respectively, and the photoelectric material layer covers the insulating layer but cannot cover the via holes of the insulating layer; the conductive material layer covers the via hole and the insulating layer; the conductive material layer is provided with a gap so as to separate the conductive material layer into two unconnected parts which are respectively connected with the positive electrode and the negative electrode through holes; the gap is located on the photoelectric material layer.

A manufacturing method of a PM-OLED display capable of automatically adjusting brightness comprises the following steps:

step 1, manufacturing an anode, a functional wiring, a positive electrode of a photosensitive device structure, a negative electrode of the photosensitive device structure and an insulating layer on a large-plate device substrate, wherein the insulating layer is provided with at least two through holes to expose partial positive electrode and partial negative electrode respectively; the photosensitive device structure is arranged in a region between the sealing frame and the effective display area;

the functional trace comprises the following parts: part of the functional wiring is used for connecting each anode on the light-emitting device structure to the drive IC binding position, part of the functional wiring is used for connecting each cathode on the light-emitting device structure to the drive IC binding position, part of the functional wiring is used for connecting the positive electrode and the negative electrode on the photosensitive device structure to the FPC binding position, and part of the functional wiring is used for connecting the drive IC binding position and the FPC binding position;

step 2, forming an organic light-emitting material layer above the anode, and forming a photoelectric material layer on the insulating layer of the photosensitive device structure, wherein the photoelectric material layer avoids the through hole;

step 3, forming a conductive material layer above the organic light-emitting material layer and the photoelectric material layer;

step 4, coating sealing frame glue on the large-plate rear cover and/or the large-plate device substrate, coating liquid desiccant or solid desiccant on the rear cover side, and then aligning, laminating and packaging the rear cover and the device substrate;

and 5, cutting and classifying the large-board device subjected to the attaching and packaging, binding the driver IC and binding the FPC, and finishing the manufacture of the device.

As an improvement of the manufacturing method of the PM-OLED display capable of automatically adjusting the brightness, the photosensitive device structure is manufactured through yellow light equipment and evaporation equipment.

As an improvement of the manufacturing method of the PM-OLED display for automatically adjusting brightness provided by the present invention, instep 1, a pixel isolation grid and a cathode isolation pillar are formed on a large-panel device substrate.

As an improvement of the manufacturing method of the PM-OLED display capable of automatically adjusting the brightness provided by the present invention, the basic stacking structure of the organic light emitting material sequentially comprises, from bottom to top: HIL (hole injection layer), HTL (hole transport layer), EML (light emitting layer), ETL (electron transport layer), EIL (electron injection layer).

The working principle of the invention is as follows: the invention integrates a photoresistor in the device of the PM-OLED display, and the resistance value of the photoresistor is driven to change by sensing the illumination change of the external environment through the photoresistor, so that the brightness of the display state of the PM-OLED device is automatically adjusted. The photoresistor belongs to a special resistance device made of semiconductor material, and its working principle is based on internal photoelectric effect. The photoresistor is very sensitive to visible light, the stronger the illumination, the lower the resistance (the resistance is rapidly reduced along with the increase of the illumination intensity of the environment), and the bright resistance can be as small as below 1K omega. The high-resistance LED lamp is in a high-resistance state under no light irradiation, and the dark resistance can generally reach about 1.5M omega. When the PM-OLED display device is in a high environment illumination (such as an outdoor environment or an indoor normal illumination), the resistance value of the photoresistor is low (generally, the resistance is from several ohms to several thousand ohms), the normal driving voltage (Vcc/Vpp) of the display device cannot be influenced, and the brightness of the display device is not influenced; when the brightness of the environment is reduced, the impedance of the photoresistor is increased, the driving voltage (Vcc/Vpp) of the PM-OLED is reduced, and the brightness of the device is reduced, so that the brightness of the PM-OLED becomes softer in a dark environment and cannot generate strong stimulation to the vision.

A method of fabricating a photosensitive device structure in a PM-OLED display device, wherein said PM-OLED device is either planar rigid or flexible; can be in a common shape or in a special shape. The preparation process comprises the following steps: and finishing the manufacture of the photosensitive device structure before packaging the substrate and the rear cover of the PM-OLED display, and packaging the photosensitive device structure in the device.

The invention has the beneficial effects that: the photoresistor is integrated in the device, but is arranged in the area between the AA area and the VA area, and the photoresistor is used for detecting the light intensity, so that the effect of automatically adjusting the brightness of the PM-OLED device can be achieved under the condition that an external photosensitive device and/or a voltage increasing and reducing circuit are not carried; the display integrates the photoresistance structure in the blank area of the non-display area in the display, does not need to revise the basic structure of the display again, does not need to embed the photoresistance structure into a TFT pixel structure like an AM-OLED display, so that the structural design of the display becomes complicated, and the cost and the efficiency problems of exposure equipment with high precision (less than or equal to 3 mu m) and expensive high-precision MASK are needed in the manufacturing process, and an external photosensitive sensor and an external circuit are not needed; meanwhile, the photoelectric material of the photosensitive device structure is manufactured and packaged in the sealing frame in a vacuum environment, and a resin material is not required to be additionally added to carry out sealing and moisture-proof treatment on the photoelectric material, so that the problem that when the photosensitive device structure is designed outside the box, a transparent material is required to be adopted for waterproof (or moisture-proof) protection is solved.

Drawings

The invention is further illustrated with reference to the following figures and examples.

FIG. 1 is a schematic diagram of an equivalent circuit of a PM-OLED display device having a photosensor structure according to the present invention;

fig. 2 is a schematic structural diagram of an embodiment of a PM-OLED display device of the present invention, wherein a specific light emitting device structure is not shown, and a part of functional traces connecting an anode of the light emitting device structure are shown, and a part of functional traces connecting a cathode of the light emitting device structure are not shown;

FIG. 3 is an enlarged view of a portion of FIG. 2 at A;

FIG. 4 is a schematic structural diagram of another embodiment of a PM-OLED display device according to the present invention, wherein a specific light emitting device structure is not shown, showing a portion of functional traces connecting anodes of the light emitting device structure, and a portion of functional traces connecting cathodes of the light emitting device structure are not shown;

FIG. 5 is a schematic structural diagram of another embodiment of a PM-OLED display device according to the present invention, wherein a specific light emitting device structure is not shown, showing a portion of functional traces connecting anodes of the light emitting device structure, and a portion of functional traces connecting cathodes of the light emitting device structure are not shown;

fig. 6 is a schematic structural diagram of still another embodiment of the PM-OLED display device of the present invention, wherein a specific light emitting device structure is not shown, showing a part of functional traces connecting anodes of the light emitting device structure, and a part of functional traces connecting cathodes of the light emitting device structure are not shown;

FIG. 7 is a cross-sectional view taken at B-B of FIG. 3;

figure 8 is a schematic diagram of one embodiment of a layer of conductive material in a photosensitive device structure in accordance with the present invention;

figure 9 is a schematic diagram of another embodiment of a layer of conductive material in a photosensitive device structure in accordance with the present invention;

FIG. 10 is a schematic flow chart of a method for manufacturing a PM-OLED display with automatic brightness adjustment according to the present invention.

Detailed Description

In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail with reference to the following embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.

Referring to fig. 1 to 6, the present embodiment provides a PM-OLED display capable of automatically adjusting brightness, which includes adevice substrate 1 formed with a lightemitting device structure 2, a rear cover attached to thedevice substrate 1 through a sealingframe 3, and aphotosensitive device structure 4 located in an area between the sealingframe 3 and an effective display area (AA area) and connected in series to a Vcc lead or a Vpp lead between a driver IC5 and an FPC6, i.e., thephotosensitive device structure 4 is not disposed in the driver pixel structure, but disposed on a Vcc lead or a Vpp lead line input from the FPC6 to the driver IC5 before an input terminal of thedriver IC 5. By adopting the design structure, the display integrates the photoresistor structure in the blank area of the non-display area in the display, the basic structure of the display is not required to be revised and designed, the cost and efficiency problems of exposure equipment with high precision (less than or equal to 3 mu m) and expensive high-precision MASK in the manufacturing process are not required like an AM-OLED display embedding the photoresistor structure in a TFT pixel structure, and an external photosensor and an external circuit are not required; meanwhile, the photoelectric material of thephotosensitive device structure 4 is manufactured and packaged in the sealingframe 3 in a vacuum environment, no additional resin material is needed, and the problem that when the photosensitive device structure is designed outside the box, a transparent material is needed for waterproof (or moisture-proof) protection is solved.

The present embodiment is mainly improved by integrating thephotosensitive device structure 4 on thedevice substrate 1, so as to achieve the purpose of light control. The rest components can be designed according to the structure of the existing PM-OLED display. In general, the lightemitting device structure 2 includes M × N pixel units arranged in a matrix, and is divided into N rows and M columns, i.e., N anodes and M cathodes. Wherein the anode and the cathode correspond to two electrodes of the light emitting pixel, respectively. Each anode and cathode are respectively connected to the scan terminal pin and the common terminal pin of the driving IC5 through functional traces, so that the driving IC5 can drive and control the anode and the cathode row by row and column by column.

It should be noted that, the layout of the anode and the cathode of the PM-OLED device may be different according to different designs and defining manners of the pins of the driver IC5, that is, each of the row electrodes and the column electrodes may be further connected to the common terminal pin and the scan terminal pin of the driver IC5 through functional routing, so that the driver IC5 drives and controls the cathode and the anode row by row and column by column.

The basic principle of the embodiment is as follows: when the PM-OLED display is in high ambient illumination (brightness), such as when normal illumination is started in an outdoor environment or indoors, the resistance value of the photoresistor is low, generally the resistance is several ohms to several thousand ohms, the normal driving voltage of the display device cannot be influenced, and the brightness of the display device cannot be influenced; when the ambient illumination (brightness) is reduced, the impedance of the photoresistor is increased, and as the photoresistor is connected in series with the Vcc lead or the Vpp lead between the driver IC5 and the FPC6, the driving voltage (Vcc/Vpp) input to the PM-OLED display device is reduced, and the brightness of the display device is reduced, so that the brightness of the PM-OLED in a dark environment becomes softer and does not generate strong stimulation to the vision.

Referring to fig. 2 to 6, in the present invention, before thedevice substrate 1 and the back cover are packaged, thephotosensitive device structure 4 is fabricated in an area between the outer edge of the AA region and thesealing frame 3, preferably, a relatively wide area between the outermostfunctional trace 7 and the sealingframe 3, such as at least one of a lower left corner (shown in fig. 2 and 3), a lower right corner (shown in fig. 4), an upper left side and an upper right side (shown in fig. 5) and a top side (shown in fig. 6) of the periphery of the display region. Accordingly, it may be arranged in other similar areas as long as the object of the present embodiment is achieved. The number of thephotosensitive device structures 4 may be one or more, and may be adjusted appropriately according to actual conditions. The number of the photosensitive device structures is increased, the sensitivity and the reliability of a product can be improved, and when a single photosensitive device structure fails, the other photosensitive device structure can be prevented from continuously playing a role.

Specifically, as shown in fig. 7, thephotosensitive device structure 4 specifically includes the following components: the two electrode plates are mutually matched and separated: onepositive electrode 41 and onenegative electrode 42 to be connected in series by wiring on the Vcc lead or the Vpp lead between the driver IC5 and theFPC 6. An insulatinglayer 43 is further arranged above the electrode plate, and the insulatinglayer 43 is provided with two through holes for respectively exposing the parts of thepositive electrode 41 and thenegative electrode 42; anoptoelectronic material layer 44, preferably but not limited to an inorganic optoelectronic material such as a chalcogenide luminescent material, is disposed on the insulatinglayer 43, but does not cover and fill the two vias; thephotovoltaic material layer 44 is provided with aconductive material layer 45 which covers the insulatinglayer 43 and fills the two vias, and is formed above thephotovoltaic material layer 44 and the vias of the insulatinglayer 43, but not beyond the outer edge of the insulatinglayer 43. Theconductive material layer 45 is provided with agap 46 therebetween to separate the conductive material layer into two unconnected portions, which are connected to thepositive electrode 41 and thenegative electrode 42 via holes, respectively, and thegap 46 is located on thephotoelectric material layer 44. Theslit 46 may be comb-shaped, spiral-shaped, or convoluted, or may have other shapes, as shown in fig. 8 and 9. When thephotoelectric material layer 44 is excited by light to conduct, the photoresistor can conduct electricity by communicating with theconductive material layer 45, namely, thepositive electrode 42 and thenegative electrode 42, so that the function of the photoresistor of the embodiment is realized.

The materials of the positive electrode and the negative electrode are preferably but not limited to ITO (transparent indium tin oxide),

A single-layer conductive film or a multi-layer conductive film made of IZO (transparent indium zinc oxide), nano silver, magnesium silver alloy, graphene, molybdenum, aluminum, titanium, silver, gold, indium, or other metals; the electrode pattern formation method is not limited to a wet etching method, a laser dry etching method, a special gas dry etching method, or other processing methods. The conductive material layer on the photoelectric material is not limited to PVD (sputtering, evaporation, ion plating, etc.), CVD, coating (including inkjet printing), coating, or the like. The wavelength of the light waves sensed by the photoelectric material layer is not limited to an ultraviolet band, an infrared band and a visible light band.

Referring to fig. 10, the present embodiment further provides a method for manufacturing a PM-OLED display capable of automatically adjusting brightness, the method includes the following steps:

step 1, manufacturing an anode in each effective display area on a large-plate device substrate, and etching the anode into row electrodes which are arranged in parallel; the method comprises the steps of manufacturing a functional wiring in a non-display area on a large-plate device substrate, manufacturing a positive electrode, a negative electrode and an insulating layer of a photosensitive device structure in an area between a sealing frame and an effective display area, and forming at least two through holes in the insulating layer to expose partial positive electrode and partial negative electrode respectively. The functional trace comprises the following parts: and one part of function wiring is used for connecting each anode on the light-emitting device structure to the drive IC binding position, one part of function wiring is used for connecting each cathode on the light-emitting device structure to the drive IC binding position, the other part of function wiring is used for connecting the positive electrode and the negative electrode on the photosensitive device structure to the FPC binding position, and the other part of function wiring is used for connecting the drive IC binding position and the FPC binding position.

Specifically, instep 1, a pixel isolation grid and a cathode isolation column are formed on a large-panel device substrate.

And 2, forming an organic light-emitting material layer above the anode, and forming a photoelectric material layer on the insulating layer of the photosensitive device structure, wherein the photoelectric material layer avoids the through hole.

In specific implementation, the basic stacking structure of the organic light-emitting material sequentially comprises the following components from bottom to top: HIL (hole injection layer), HTL (hole transport layer), EML (light emitting layer), ETL (electron transport layer), EIL (electron injection layer).

Step 3, forming a conductive material layer above the organic light-emitting material layer and the photoelectric material layer; and the conductive material layers positioned on the organic light-emitting material layers are separated by cathode isolation columns to form a plurality of rows of electrodes serving as cathodes of the PM-OLED.

Specifically, as shown in fig. 7, thephotosensitive device structure 4 specifically includes the following components: the two electrode plates are mutually matched and separated: onepositive electrode 41 and onenegative electrode 42 to be connected in series by wiring on the Vcc lead or the Vpp lead between the driver IC5 and theFPC 6. An insulatinglayer 43 is further arranged above the electrode plate, and the insulatinglayer 43 is provided with two through holes for respectively exposing the parts of thepositive electrode 41 and thenegative electrode 42; anoptoelectronic material layer 44, preferably but not limited to an inorganic optoelectronic material such as a chalcogenide luminescent material, is disposed on the insulatinglayer 43, but does not cover and fill the two vias; thephotovoltaic material layer 44 is provided with aconductive material layer 45 which covers the insulatinglayer 43 and fills the two vias, and is formed above thephotovoltaic material layer 44 and the vias of the insulatinglayer 43, but not beyond the outer edge of the insulatinglayer 43. Theconductive material layer 45 is provided with agap 46 in the middle thereof so as to separate the conductive material layer into two unconnected parts, which are respectively connected with thepositive electrode 41 and thenegative electrode 42 through holes, and thegap 46 is located on thephotoelectric material layer 44. Theslit 46 may be comb-shaped, spiral-shaped, or convoluted, or may have other shapes, as shown in fig. 8 and 9. When thephotoelectric material layer 44 is excited by light to conduct, the photoresistor can conduct electricity by communicating with theconductive material layer 45, namely, thepositive electrode 42 and thenegative electrode 42, so that the function of the photoresistor of the embodiment is realized.

The positive electrode and the negative electrode are preferably but not limited to a single-layer conductive film or a multi-layer conductive film made of ITO (transparent indium tin oxide), IZO (transparent indium zinc oxide), nano silver, magnesium silver alloy, graphene or molybdenum, aluminum, titanium, silver, gold, indium, and other metals; the electrode pattern formation method is not limited to a wet etching method, a laser dry etching method, a special gas dry etching method, or other processing methods. The conductive material layer on the photoelectric material is not limited to PVD (sputtering, evaporation, ion plating, etc.), CVD, coating (including inkjet printing), coating, or the like. The wavelength of the light waves sensed by the photoelectric material layer is not limited to an ultraviolet band, an infrared band and a visible light band.

Thephotosensitive device structure 4 can be manufactured by using simple yellow light equipment and evaporation equipment without using complex TFT Array manufacturing process and equipment.

Step 4, coating sealingframe glue 3 on the large-plate rear cover and/or the large-plate device substrate, coating liquid desiccant or attached solid desiccant on the rear cover side, and then aligning, laminating and packaging the rear cover and the device substrate (step 4 is generally completed in a nitrogen environment, and the content of water and oxygen in the nitrogen environment is lower than 10 ppm);

and 5, cutting and sorting the large-board device which is attached and packaged, binding the drive IC5 and the FPC6, and binding the FPC6, namely connecting thephotosensitive device structure 4 in series on a Vcc or Vpp lead line between the drive IC5 and the FPC6 by using a circuit of the FPC6 as a jumper wire, thereby completing the manufacture of the device.

The display manufactured by the method integrates the photoresistor structure in the blank area of the non-display area in the display, does not need to revise the basic structure of the display, does not need to embed the photoresistor structure into the TFT pixel structure like an AM-OLED display, so that the structural design of the display becomes complex, and the cost and efficiency problems of exposure equipment with high precision (less than or equal to 3 mu m) and expensive high-precision MASK are needed in the manufacturing process, and an external photosensitive sensor and an external circuit are not needed; meanwhile, the photoelectric material of thephotosensitive device structure 4 is manufactured and packaged in thesealing frame 3 in a vacuum environment, no additional resin material is needed, and the problem that when the photosensitive device structure is designed outside the box, a transparent material is needed for waterproof (or moisture-proof) protection is solved.

Although the illustrative embodiments of the present invention have been described above to enable those skilled in the art to understand the present invention, the present invention is not limited to the scope of the embodiments, and it is apparent to those skilled in the art that all the inventive concepts using the present invention are protected as long as they can be changed within the spirit and scope of the present invention as defined and defined by the appended claims.

Claims (8)

1. A PM-OLED display capable of automatically adjusting brightness is characterized in that: the PM-OLED display capable of automatically adjusting brightness comprises a device substrate with a light-emitting device structure, a rear cover which is attached to the device substrate in an alignment mode through a sealing frame, and a photosensitive device structure which is located in a region between the sealing frame and an effective display area and is connected in series to a Vcc lead or a Vpp lead between a driving IC and an FPC;

the photosensitive device structure comprises a positive electrode, a negative electrode, an insulating layer, a photoelectric material layer and a conductive material layer, wherein the positive electrode and the negative electrode are matched with each other; the conductive material layer is provided with a gap so as to separate the conductive material layer into two unconnected parts which are respectively connected with the positive electrode and the negative electrode through holes; the gap is positioned on the photoelectric material layer;

the manufacturing method of the PM-OLED display capable of automatically adjusting the brightness comprises the following steps:

step 1, manufacturing an anode, a functional wiring, a positive electrode of a photosensitive device structure, a negative electrode of the photosensitive device structure and an insulating layer on a large-plate device substrate, wherein the insulating layer is provided with at least two through holes to expose partial positive electrode and partial negative electrode respectively; the photosensitive device structure is arranged in a region between the sealing frame and the effective display area; the functional trace comprises the following parts: part of the functional wiring is used for connecting each anode on the light-emitting device structure to the drive IC binding position, part of the functional wiring is used for connecting each cathode on the light-emitting device structure to the drive IC binding position, part of the functional wiring is used for connecting the positive electrode and the negative electrode on the photosensitive device structure to the FPC binding position, and part of the functional wiring is used for connecting the drive IC binding position and the FPC binding position;

step 2, forming an organic light-emitting material layer above the anode, and forming a photoelectric material layer on the insulating layer of the photosensitive device structure, wherein the photoelectric material layer avoids the through hole;

step 3, forming a conductive material layer above the organic light-emitting material layer and the photoelectric material layer;

step 4, coating sealing frame glue on the large-plate rear cover and/or the large-plate device substrate, coating liquid desiccant or solid desiccant on the rear cover side, and then aligning, laminating and packaging the rear cover and the device substrate;

and 5, cutting and classifying the large-board device subjected to the attaching and packaging, binding the driver IC and binding the FPC, and finishing the manufacture of the device.

2. The PM-OLED display with automatic brightness adjustment according to claim 1, wherein: the photosensitive device structure is manufactured in the area between the outer edge of the effective display area and the sealing frame before the device substrate and the rear cover are packaged.

3. The PM-OLED display with automatic brightness adjustment according to claim 2, wherein: the photosensitive device structure is manufactured in an area between an outermost peripheral functional wire connected with a pixel electrode and a sealing frame before a device substrate and a rear cover are packaged.

4. The PM-OLED display with automatic brightness adjustment according to claim 1, wherein: the number of the photosensitive device structures is at least one.

5. The PM-OLED display with automatic brightness adjustment according to claim 1, wherein: the photosensitive device structure is a photosensitive device structure with a comb-shaped or spiral-shaped or convoluted conductive material layer.

6. The PM-OLED display with automatic brightness adjustment according to claim 1, wherein: the photosensitive device structure is manufactured through yellow light equipment and evaporation equipment.

7. The PM-OLED display with automatic brightness adjustment according to claim 1, wherein: in step 1, forming a pixel isolation grid and a cathode isolation column on a large-panel device substrate is further included.

8. The PM-OLED display with automatic brightness adjustment according to claim 1, wherein: the basic stacking structure of the organic light-emitting material layer sequentially comprises the following components from bottom to top: HIL, HTL, EML, ETL, EIL.

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