CN108954039B - Wavelength conversion device and preparation method thereof - Google Patents
Wavelength conversion device and preparation method thereofDownload PDFInfo
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- 238000006243chemical reactionMethods0.000titleclaimsabstractdescription37
- 238000002360preparation methodMethods0.000titleclaimsabstractdescription8
- BQCADISMDOOEFD-UHFFFAOYSA-NSilverChemical group[Ag]BQCADISMDOOEFD-UHFFFAOYSA-N0.000claimsabstractdescription70
- 229910052709silverInorganic materials0.000claimsabstractdescription50
- 239000004332silverSubstances0.000claimsabstractdescription50
- 239000000758substrateSubstances0.000claimsabstractdescription50
- 230000005496eutecticsEffects0.000claimsabstractdescription43
- TWNQGVIAIRXVLR-UHFFFAOYSA-Noxo(oxoalumanyloxy)alumaneChemical groupO=[Al]O[Al]=OTWNQGVIAIRXVLR-UHFFFAOYSA-N0.000claimsabstractdescription30
- 238000005245sinteringMethods0.000claimsabstractdescription22
- 239000010410layerSubstances0.000claimsdescription174
- 239000002245particleSubstances0.000claimsdescription20
- 229910000679solderInorganic materials0.000claimsdescription19
- 229910052782aluminiumInorganic materials0.000claimsdescription16
- 229910052688GadoliniumInorganic materials0.000claimsdescription15
- 229910052765LutetiumInorganic materials0.000claimsdescription15
- 229910052771TerbiumInorganic materials0.000claimsdescription15
- 229910052727yttriumInorganic materials0.000claimsdescription15
- PNEYBMLMFCGWSK-UHFFFAOYSA-Naluminium oxideInorganic materials[O-2].[O-2].[O-2].[Al+3].[Al+3]PNEYBMLMFCGWSK-UHFFFAOYSA-N0.000claimsdescription12
- 239000000919ceramicSubstances0.000claimsdescription12
- 229910052733galliumInorganic materials0.000claimsdescription11
- 239000000463materialSubstances0.000claimsdescription11
- 239000011268mixed slurrySubstances0.000claimsdescription11
- 229910052751metalInorganic materials0.000claimsdescription10
- 239000002184metalSubstances0.000claimsdescription10
- 238000000034methodMethods0.000claimsdescription9
- 239000011241protective layerSubstances0.000claimsdescription9
- 229910018072Al 2 O 3Inorganic materials0.000claimsdescription8
- 239000011248coating agentSubstances0.000claimsdescription7
- 238000000576coating methodMethods0.000claimsdescription7
- 239000002223garnetSubstances0.000claimsdescription6
- MSNOMDLPLDYDME-UHFFFAOYSA-Ngold nickelChemical compound[Ni].[Au]MSNOMDLPLDYDME-UHFFFAOYSA-N0.000claimsdescription6
- 238000005476solderingMethods0.000claimsdescription5
- 239000010936titaniumSubstances0.000claimsdescription5
- 230000007704transitionEffects0.000claimsdescription5
- 238000001035dryingMethods0.000claimsdescription4
- 238000003672processing methodMethods0.000claimsdescription4
- 229910052581Si3N4Inorganic materials0.000claimsdescription3
- RTAQQCXQSZGOHL-UHFFFAOYSA-NTitaniumChemical compound[Ti]RTAQQCXQSZGOHL-UHFFFAOYSA-N0.000claimsdescription3
- QCEUXSAXTBNJGO-UHFFFAOYSA-N[Ag].[Sn]Chemical compound[Ag].[Sn]QCEUXSAXTBNJGO-UHFFFAOYSA-N0.000claimsdescription3
- JWVAUCBYEDDGAD-UHFFFAOYSA-Nbismuth tinChemical compound[Sn].[Bi]JWVAUCBYEDDGAD-UHFFFAOYSA-N0.000claimsdescription3
- PMHQVHHXPFUNSP-UHFFFAOYSA-Mcopper(1+);methylsulfanylmethane;bromideChemical compoundBr[Cu].CSCPMHQVHHXPFUNSP-UHFFFAOYSA-M0.000claimsdescription3
- JVPLOXQKFGYFMN-UHFFFAOYSA-Ngold tinChemical group[Sn].[Au]JVPLOXQKFGYFMN-UHFFFAOYSA-N0.000claimsdescription3
- LQBJWKCYZGMFEV-UHFFFAOYSA-Nlead tinChemical compound[Sn].[Pb]LQBJWKCYZGMFEV-UHFFFAOYSA-N0.000claimsdescription3
- HBMJWWWQQXIZIP-UHFFFAOYSA-Nsilicon carbideChemical compound[Si+]#[C-]HBMJWWWQQXIZIP-UHFFFAOYSA-N0.000claimsdescription3
- 229910010271silicon carbideInorganic materials0.000claimsdescription3
- HQVNEWCFYHHQES-UHFFFAOYSA-Nsilicon nitrideChemical compoundN12[Si]34N5[Si]62N3[Si]51N64HQVNEWCFYHHQES-UHFFFAOYSA-N0.000claimsdescription3
- 229910052719titaniumInorganic materials0.000claimsdescription3
- 238000009766low-temperature sinteringMethods0.000claimsdescription2
- 238000002310reflectometryMethods0.000abstractdescription11
- 239000000853adhesiveSubstances0.000abstract1
- 230000001070adhesive effectEffects0.000abstract1
- 239000013078crystalSubstances0.000description7
- 239000000843powderSubstances0.000description6
- KDLHZDBZIXYQEI-UHFFFAOYSA-NPalladiumChemical compound[Pd]KDLHZDBZIXYQEI-UHFFFAOYSA-N0.000description5
- RYGMFSIKBFXOCR-UHFFFAOYSA-NCopperChemical compound[Cu]RYGMFSIKBFXOCR-UHFFFAOYSA-N0.000description4
- 229910052802copperInorganic materials0.000description4
- 239000010949copperSubstances0.000description4
- BASFCYQUMIYNBI-UHFFFAOYSA-NplatinumChemical compound[Pt]BASFCYQUMIYNBI-UHFFFAOYSA-N0.000description4
- 230000000694effectsEffects0.000description3
- 230000009286beneficial effectEffects0.000description2
- 230000007812deficiencyEffects0.000description2
- 238000010586diagramMethods0.000description2
- 239000011521glassSubstances0.000description2
- 230000007774longtermEffects0.000description2
- 230000005012migrationEffects0.000description2
- 238000013508migrationMethods0.000description2
- 229910052763palladiumInorganic materials0.000description2
- 238000007788rougheningMethods0.000description2
- OGFYIDCVDSATDC-UHFFFAOYSA-Nsilver silverChemical compound[Ag].[Ag]OGFYIDCVDSATDC-UHFFFAOYSA-N0.000description2
- 239000000126substanceSubstances0.000description2
- XAGFODPZIPBFFR-UHFFFAOYSA-NaluminiumChemical compound[Al]XAGFODPZIPBFFR-UHFFFAOYSA-N0.000description1
- 230000015572biosynthetic processEffects0.000description1
- 230000005284excitationEffects0.000description1
- 238000000605extractionMethods0.000description1
- 238000000227grindingMethods0.000description1
- 230000017525heat dissipationEffects0.000description1
- 229910044991metal oxideInorganic materials0.000description1
- 150000004706metal oxidesChemical class0.000description1
- 238000004021metal weldingMethods0.000description1
- 238000002156mixingMethods0.000description1
- 238000007747platingMethods0.000description1
- 229910052697platinumInorganic materials0.000description1
- 238000005498polishingMethods0.000description1
- 238000006467substitution reactionMethods0.000description1
- 238000003466weldingMethods0.000description1
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Abstract
Description
Translated fromChinese技术领域technical field
本发明属于发光材料技术领域，尤其涉及一种波长转换装置及其制备方法。The invention belongs to the technical field of luminescent materials, and in particular relates to a wavelength conversion device and a preparation method thereof.
背景技术Background technique
目前激光荧光转换型光源发展较快，随着激光功率的提高，对于波长转换层的散热要求也不断提高，目前的波长转换装置是反射层采用白色散射粒子和玻璃粉混合烧结形成的漫反射层，这种结构耐热性较高，但是其烧结组成材料的散射粒子和玻璃粉的热导率较低，且烧结结构为了保证较高的反射率，一般是多孔结构，热阻较高，因而不利于波长转换装置在高功率激光激发下的发光亮度和稳定性的提高。因而目前的波长转换装置的反射层成为进一步提升激光荧光显示光源亮度的瓶颈。At present, the development of laser fluorescent conversion light source is relatively fast. With the increase of laser power, the heat dissipation requirements for the wavelength conversion layer are also increasing. The current wavelength conversion device is a diffuse reflection layer formed by mixing white scattering particles and glass powder for the reflection layer. , This structure has high heat resistance, but the thermal conductivity of the scattering particles and glass powder of the sintered material is low, and the sintered structure is generally a porous structure in order to ensure high reflectivity, and the thermal resistance is high, so It is not conducive to the improvement of the luminous brightness and stability of the wavelength conversion device under high-power laser excitation. Therefore, the reflective layer of the current wavelength conversion device becomes a bottleneck to further improve the brightness of the laser fluorescent display light source.
因此，针对上述不足，实有必要提供一种新的波长转换装置及其制备方法，以解决现有技术反射率低，热阻较高的问题。Therefore, in view of the above deficiencies, it is necessary to provide a new wavelength conversion device and a preparation method thereof, so as to solve the problems of low reflectivity and high thermal resistance in the prior art.
发明内容SUMMARY OF THE INVENTION
为了克服现有技术的不足，以解决现有技术反射率低，热阻较高的问题。本发明提供一种新型反射率高，热阻低且长期可靠性高的反射层，应用该反射层的波长转换装置的发光效率更高，亮度更高且仍能保持较好的长期可靠性，具体方案如下：In order to overcome the deficiencies of the prior art and solve the problems of low reflectivity and high thermal resistance in the prior art. The invention provides a novel reflective layer with high reflectivity, low thermal resistance and high long-term reliability. The wavelength conversion device using the reflective layer has higher luminous efficiency, higher brightness and can still maintain good long-term reliability. The specific plans are as follows:
本发明提供一种波长转换装置，包括依次设置的发光层、反射层、连接层和导热基板层，所述发光层为氧化铝共晶发光层，所述反射层为纯银烧结而成的银反射层。The invention provides a wavelength conversion device, which comprises a light-emitting layer, a reflection layer, a connection layer and a heat-conducting substrate layer arranged in sequence, the light-emitting layer is an alumina eutectic light-emitting layer, and the reflection layer is silver sintered from pure silver reflective layer.
优选的，所述氧化铝共晶发光层为石榴石结构的（Lu,Y, Gd,Tb）3（Ga,Al）5O12:Ce3+与氧化铝形成的共晶发光层。Preferably, the aluminum oxide eutectic light-emitting layer is a garnet-structured (Lu, Y, Gd, Tb)3 (Ga, Al)5 O12 :Ce3+ eutectic light-emitting layer formed by aluminum oxide.
优选的，所述石榴石结构的（Lu,Y, Gd,Tb）3（Ga,Al）5O12:Ce3+与氧化铝形成的共晶发光层中氧化铝的摩尔比例大于40%。Preferably, the molar ratio of aluminum oxide in the eutectic light-emitting layer formed by (Lu, Y, Gd, Tb)3 (Ga, Al)5 O12 :Ce3+ of the garnet structure and aluminum oxide is greater than 40%.
优选的，所述发光层与所述反射层之间设置有氧化铝膜层。Preferably, an aluminum oxide film layer is disposed between the light-emitting layer and the reflective layer.
优选的，所述发光层的厚度为0.005-5mm；所述反射层的厚度为1 -100um；所述连接层的厚度为0.005-0.5mm；所述导热基板的厚度为0.1-5mm。Preferably, the thickness of the light-emitting layer is 0.005-5mm; the thickness of the reflective layer is 1-100um; the thickness of the connecting layer is 0.005-0.5mm; the thickness of the thermally conductive substrate is 0.1-5mm.
优选的，所述连接层的孔隙率小于50%。Preferably, the porosity of the connecting layer is less than 50%.
优选的，所述连接层为焊锡膏或者预成型焊片回流焊接形成，所述焊锡膏为金锡，银锡，铋锡或铅锡中的任意一种或多种的组合。Preferably, the connection layer is formed by reflow soldering of solder paste or preformed solder sheet, and the solder paste is any one or a combination of gold-tin, silver-tin, bismuth-tin or lead-tin.
优选的，所述连接层为低温烧结银浆料烧结形成。Preferably, the connection layer is formed by sintering low-temperature sintered silver paste.
优选的，所述导热基板为金属基板或陶瓷基板，所述导热基板上设置有保护层。Preferably, the thermally conductive substrate is a metal substrate or a ceramic substrate, and a protective layer is provided on the thermally conductive substrate.
优选的，所述导热基板为氮化铝，碳化硅，氮化硅或氧化铝中的任意一种或多种组合的陶瓷基板，所述陶瓷基板和所述镍金保护层之间设置有钛过渡层。Preferably, the thermally conductive substrate is a ceramic substrate comprising any one or more of aluminum nitride, silicon carbide, silicon nitride or aluminum oxide, and titanium is provided between the ceramic substrate and the nickel-gold protective layer. transition layer.
优选的，所述导热基板为平板结构或带鳍片结构。Preferably, the thermally conductive substrate is a flat plate structure or a structure with fins.
本发明还提供一种波长转换装置的制备方法，包括如下步骤：The present invention also provides a preparation method of a wavelength conversion device, comprising the following steps:
步骤S1：提供Al2O3-(Lu,Y, Gd,Tb)3(Ga,Al)5O12:Ce3+共晶发光材料，并对所述Al2O3-(Lu,Y, Gd,Tb)3(Ga,Al)5O12:Ce3+共晶发光材料进行预处理形成共晶发光层；Step S1: providing Al2 O3 -(Lu, Y, Gd, Tb)3 (Ga, Al)5 O12 :Ce3+ eutectic light-emitting material, and applying the Al2 O3 -(Lu, Y, Gd,Tb)3 (Ga,Al)5 O12 :Ce3+ eutectic light-emitting material is pretreated to form a eutectic light-emitting layer;
步骤S2：在所述共晶发光层上涂覆银粉和有机体的混合浆料后烧结形成纯银的反射层；Step S2: coating the mixed slurry of silver powder and organic body on the eutectic light-emitting layer and sintering to form a reflective layer of pure silver;
步骤S3：提供镀镍金的导热基板，将步骤S2形成的反射层设置在镀镍金的导热基板上，经处理形成连接层。Step S3: providing a nickel-gold-plated thermally conductive substrate, disposing the reflective layer formed in step S2 on the nickel-gold-plated thermally conductive substrate, and processing to form a connection layer.
优选的，步骤S1的预处理包括将Al2O3-(Lu,Y, Gd,Tb)3(Ga,Al)5O12:Ce3+共晶发光材料双面研磨抛光，一面镀增透膜或者表面粗化。Preferably, the pretreatment of step S1 includes grinding and polishing the Al2 O3 -(Lu, Y, Gd, Tb)3 (Ga, Al)5 O12 :Ce3+ eutectic light-emitting material on both sides, and plating one side with antireflection film or surface roughening.
优选的，步骤S2中采用的银粉的粒径范围是0.01-20um。Preferably, the particle size range of the silver powder used in step S2 is 0.01-20um.
优选的，所述步骤S2包括：Preferably, the step S2 includes:
步骤S21：将涂覆混合浆料的共晶发光层在60-150℃下预烘干形成银反射层预成型层；Step S21 : pre-drying the eutectic light-emitting layer coated with the mixed slurry at 60-150° C. to form a silver reflective layer preformed layer;
步骤S22：将步骤S21得到的银反射层预成型层置于高温炉中500-1000℃烧结形成银反射层。Step S22: The silver reflective layer preformed layer obtained in step S21 is placed in a high-temperature furnace and sintered at 500-1000° C. to form a silver reflective layer.
优选的，所述步骤S3形成连接层的处理方法为在所述导热基板上涂覆焊锡膏或设置预成型焊片，将反射层置于其上，于280-320℃下回流焊接形成连接层。Preferably, the processing method for forming the connection layer in the step S3 is to apply solder paste or set a preformed solder sheet on the thermally conductive substrate, place the reflective layer on it, and perform reflow soldering at 280-320° C. to form the connection layer. .
优选的，所述步骤S3形成连接层的处理方法为在所述导热基板上涂覆纳米银浆，将反射层置于其上在200-300℃下进行烧结。Preferably, the processing method for forming the connection layer in the step S3 is to coat the nano-silver paste on the thermally conductive substrate, and place the reflective layer on it for sintering at 200-300°C.
相对于现有技术，本发明的有益效果如下：With respect to the prior art, the beneficial effects of the present invention are as follows:
相对于目前多孔的漫反射结构，本发明采用纯银烧结形成的银反射层，提高反射层反射率和热导率的同时，利用银反射层对氧化铝共晶发光层中氧化铝单晶较高的附着力，从而也一并解决了银反射层与氧化铝共晶发光层的附着力问题。Compared with the current porous diffuse reflection structure, the present invention adopts a silver reflection layer formed by sintering pure silver, which improves the reflectivity and thermal conductivity of the reflection layer, and uses the silver reflection layer to compare the alumina single crystal in the alumina eutectic light-emitting layer. High adhesion, which also solves the adhesion problem between the silver reflective layer and the aluminum oxide eutectic light-emitting layer.
本发明采用的氧化铝共晶发光层的热导率较高，且机械强度也更高，同时纯银反射层的反射率高，且热导率也较高，与连接层的附着力好，因而这种结构的波长转换装置能够实现高效率的同时，实现高亮度和高可靠性。The aluminum oxide eutectic light-emitting layer used in the present invention has higher thermal conductivity and higher mechanical strength, and at the same time, the pure silver reflective layer has high reflectivity and thermal conductivity, and has good adhesion with the connecting layer. Therefore, the wavelength conversion device with this structure can achieve high efficiency, high brightness and high reliability.
下面将结合附图及实施例对本发明作进一步说明。The present invention will be further described below with reference to the accompanying drawings and embodiments.
附图说明Description of drawings
图1是本发明第一种实施方式的波长转换装置的结构示意图；1 is a schematic structural diagram of a wavelength conversion device according to a first embodiment of the present invention;
图2是本发明第一种实施方式的波长转换装置的制备方法流程图；2 is a flow chart of a method for preparing the wavelength conversion device according to the first embodiment of the present invention;
图3是本发明第二种实施方式的波长转换装置的结构示意图。FIG. 3 is a schematic structural diagram of a wavelength conversion device according to a second embodiment of the present invention.
具体实施方式Detailed ways
本发明提供一种新的波长转换装置及其制备方法，以解决现有技术反射率低，热阻较高的问题。The present invention provides a new wavelength conversion device and a preparation method thereof to solve the problems of low reflectivity and high thermal resistance in the prior art.
实施例一Example 1
参照图1所示，本发明提供的波长转换装置包括依次层叠设置的发光层1-1、反射层1-2、连接层1-3和导热基板层1-4。Referring to FIG. 1 , the wavelength conversion device provided by the present invention includes a light-emitting layer 1-1, a reflective layer 1-2, a connection layer 1-3 and a thermally conductive substrate layer 1-4 that are stacked in sequence.
其中发光层1-1为氧化铝共晶发光层，具体在本实施方式中，为石榴石结构的（Lu,Y, Gd,Tb）3（Ga,Al）5O12:Ce3+与氧化铝形成的共晶发光层。其中，石榴石结构的（Lu,Y, Gd,Tb）3（Ga,Al）5O12:Ce3+与氧化铝形成的共晶发光层中氧化铝的摩尔比例大于40%以上。所述发光层的厚度为0.005~5mm，优选的，为0.05~0.5mm。进一步的，在发光层表面还可以设置增透膜或者进行表面粗化处理以提高出光效率。The light-emitting layer 1-1 is an aluminum oxide eutectic light-emitting layer. Specifically, in this embodiment, it is a garnet structure (Lu, Y, Gd, Tb)3 (Ga, Al)5 O12 : Ce3+ and oxide A eutectic light-emitting layer formed of aluminum. Among them, the molar ratio of aluminum oxide in the eutectic light-emitting layer formed by (Lu, Y, Gd, Tb)3 (Ga, Al)5 O12 :Ce3+ of garnet structure and aluminum oxide is more than 40%. The thickness of the light-emitting layer is 0.005-5 mm, preferably 0.05-0.5 mm. Further, an anti-reflection film may also be provided on the surface of the light-emitting layer or a surface roughening treatment may be performed to improve the light extraction efficiency.
反射层1-2为将纯银的银粉和有机载体的混合浆料涂覆于氧化铝共晶发光层上高温烧结形成的银反射层。其中混合浆料的有机载体为可挥发或可分解物质，在高温烧结过程中被除去，形成的反射层1-2中为烧结而成的纯银结构。反射层的厚度为1~100um，优选为2~50um，更进一步优选为5~20um。其中，混合浆料中的银粉的粒径范围是0.01~20um，这是由于粒径小于0.01um的银粉不容易分散，粒径大于20um的银粉制备的银浆表面平整度不容易控制，并且粒径较大的银粉越不容易在氧化铝共晶发光层上烧结致密，附着力变差，所以烧结颗粒的大小是影响烧结活性的一个重要因素，银粉的粒径越小，越容易在氧化铝共晶发光层上形成致密的银反射层。因此本实施方式优选的银粉粒径范围可以兼顾表面平整性和烧结致密性。The reflective layer 1-2 is a silver reflective layer formed by coating the mixed slurry of pure silver silver powder and organic carrier on the alumina eutectic light-emitting layer by high temperature sintering. The organic carrier of the mixed slurry is a volatile or decomposable substance, which is removed in the high-temperature sintering process, and the formed reflective layer 1-2 is a sintered pure silver structure. The thickness of the reflective layer is 1 to 100 um, preferably 2 to 50 um, and more preferably 5 to 20 um. Among them, the particle size range of the silver powder in the mixed slurry is 0.01~20um, this is because the silver powder with a particle size smaller than 0.01um is not easy to disperse, and the surface flatness of the silver paste prepared by the silver powder with a particle size larger than 20um is not easy to control, and the particle size is less than 0.01um. The larger the diameter of the silver powder, the more difficult it is to sinter densely on the alumina eutectic light-emitting layer, and the adhesion becomes poor, so the size of the sintered particles is an important factor affecting the sintering activity. The smaller the particle size of the silver powder, the easier it is to sinter on the alumina A dense silver reflective layer is formed on the eutectic light-emitting layer. Therefore, the preferred particle size range of the silver powder in this embodiment can achieve both surface flatness and sintered compactness.
银粉的颗粒形状优选球形或者片状，这两种形状颗粒有利于形成密堆积结构，烧结的银反射层更致密；进一步地，银粉中还可以混有铂或钯的金属粉，这样可以改善银的高温迁移特性，其中，钯粉、铂粉的含量不超过30%，否则会影响反射率。本实施方式选择的粒径最容易形成反射率高的反射层。The particle shape of the silver powder is preferably spherical or flaky, and these two shapes of particles are conducive to the formation of a close-packed structure, and the sintered silver reflection layer is denser; further, the silver powder can also be mixed with platinum or palladium metal powder, which can improve the silver The high temperature migration characteristics, among which, the content of palladium powder and platinum powder should not exceed 30%, otherwise the reflectivity will be affected. The particle size selected in this embodiment is the easiest to form a reflective layer with high reflectance.
连接层1-3具体为金属焊接层，主要起到反射层1-2与导热基板1-4的连接作用，具体可以由金锡，银锡，铋锡，铅锡等焊膏或者预成型焊片回流焊接形成，也可以是低温烧结银浆料烧结形成。连接层的厚度为0.005~0.5mm，且孔隙率低于50%，优选的，孔隙率低于30%，更进一步在10%以下。The connection layer 1-3 is a metal welding layer, which mainly plays the role of connecting the reflective layer 1-2 and the thermally conductive substrate 1-4. Specifically, it can be made of gold-tin, silver-tin, bismuth-tin, lead-tin and other solder pastes or preformed solders. The wafer is formed by reflow soldering, or it can be formed by sintering low temperature sintering silver paste. The thickness of the connecting layer is 0.005-0.5 mm, and the porosity is less than 50%, preferably, the porosity is less than 30%, and further less than 10%.
导热基板1-4即可以为金属基板也可以为陶瓷基板，导热基板的厚度为0.1~5mm，进一步的，导热基板上设置有保护层。其中保护层为镀镍金保护层。金属基板优选的为铜金属基板。陶瓷基板可以是氮化铝，碳化硅，氮化硅，氧化铝等陶瓷基板的任意一种或或多种组合的，当导热基板1-4为陶瓷基板时，陶瓷基板表面镀有Ti过渡层（钛过渡层），然后再镀设镍金保护层，陶瓷基板通过Ti过渡层与镍金保护层固定。导热基板1-4可以是如图1所示的平板结构，也可以是带鳍片结构，均是可以实施的。The thermally conductive substrates 1-4 can be either metal substrates or ceramic substrates, the thickness of the thermally conductive substrates is 0.1-5 mm, and further, a protective layer is provided on the thermally conductive substrates. The protective layer is a nickel-gold protective layer. The metal substrate is preferably a copper metal substrate. The ceramic substrate can be any one or a combination of aluminum nitride, silicon carbide, silicon nitride, alumina and other ceramic substrates. When the thermally conductive substrates 1-4 are ceramic substrates, the surface of the ceramic substrate is coated with a Ti transition layer (Titanium transition layer), and then a nickel-gold protective layer is plated, and the ceramic substrate is fixed to the nickel-gold protective layer through the Ti transition layer. The thermally conductive substrates 1 to 4 can be either a flat plate structure as shown in FIG. 1 or a structure with fins, both of which can be implemented.
如上所述反射层1-2为通过纯银的银粉和有机载体的混合浆料涂覆于氧化铝共晶发光层上高温烧结形成的银反射层，此时的反射层不仅有很高的反射率，还会增加与金属焊接层之间的附着力，其原因在于，高纯度的银层很容易与焊锡膏或预成型焊片的金属焊接层中的金属形成金属氧化物，该金属氧化物可进一步形成一可靠的焊缝，以增加反射层与连接层之间的附着力。As mentioned above, the reflective layer 1-2 is a silver reflective layer formed by high-temperature sintering on the aluminum oxide eutectic light-emitting layer by coating the mixed slurry of pure silver silver powder and organic carrier on the aluminum oxide eutectic light-emitting layer. At this time, the reflective layer not only has a high reflection It also increases the adhesion to the metal solder layer because the high purity silver layer easily forms metal oxides with the metal in the solder paste or the metal solder layer of the preform. A reliable welding seam can be further formed to increase the adhesion between the reflective layer and the connecting layer.
更进一步，该反射层1-2可增加与发光层之间的粘结性，由于该反射层采用纯银烧结而成，而该发光层为石榴石结构的（Lu,Y, Gd,Tb）3（Ga,Al）5O12:Ce3+与氧化铝形成的共晶发光层，其中银和氧化铝的晶体结构都为六方晶体结构，同样的晶体结构使得纯银的银粉和有机载体的混合浆料涂覆于氧化铝共晶发光层上高温烧结时，会形成更紧密的附着，可进一步提高反射层与发光层之间的附着力。Furthermore, the reflective layer 1-2 can increase the adhesion with the light-emitting layer, because the reflective layer is made of pure silver sintered, and the light-emitting layer is of garnet structure (Lu, Y, Gd, Tb) The eutectic light-emitting layer formed by3 (Ga,Al)5 O12 :Ce3+ and aluminum oxide, in which the crystal structures of silver and aluminum oxide are both hexagonal crystal structures, the same crystal structure makes the silver powder of pure silver and the organic carrier. When the mixed slurry is coated on the alumina eutectic light-emitting layer and sintered at high temperature, a tighter adhesion will be formed, which can further improve the adhesion between the reflective layer and the light-emitting layer.
如图2所示，如上所述的波长转换装置的制备方法包括如下步骤：As shown in Figure 2, the preparation method of the above-mentioned wavelength conversion device comprises the following steps:
步骤S1：提供Al2O3-(Lu,Y, Gd,Tb)3(Ga,Al)5O12:Ce3+共晶发光材料，并对Al2O3-(Lu,Y, Gd,Tb)3(Ga,Al)5O12:Ce3+共晶发光材料进行双面研磨抛光，一面镀增透膜或者表面粗化的预处理以形成共晶发光层；Step S1: provide Al2 O3 -(Lu, Y, Gd, Tb)3 (Ga, Al)5 O12 :Ce3+ eutectic light-emitting material, and provide Al2 O3 -(Lu, Y, Gd, Tb)3 (Ga,Al)5 O12 :Ce3+ eutectic light-emitting material is ground and polished on both sides, and one side is plated with antireflection film or surface roughened to form a eutectic light-emitting layer;
步骤S2：在共晶发光层上涂覆银粉和有机体的混合浆料后烧结形成纯银的反射层，具体包括：Step S2: coating the mixed slurry of silver powder and organic body on the eutectic light-emitting layer and then sintering to form a reflective layer of pure silver, which specifically includes:
步骤S21：将涂覆混合浆料的共晶发光层在60-150℃下预烘干形成银反射层预成型层；Step S21 : pre-drying the eutectic light-emitting layer coated with the mixed slurry at 60-150° C. to form a silver reflective layer preformed layer;
步骤S22：将步骤S21得到的银反射层预成型层置于高温炉中500-1000℃烧结形成银反射层。Step S22: The silver reflective layer preformed layer obtained in step S21 is placed in a high-temperature furnace and sintered at 500-1000° C. to form a silver reflective layer.
步骤S3：提供镀镍金的导热基板，具体在本实施方式为铜基板，在铜基板上涂覆焊锡膏或预成型焊片，将发光层烧结有银反射层的一面置于焊锡膏上面，于280~320℃下回流焊接形成金属焊接层。Step S3: providing a nickel-gold-plated thermally conductive substrate, specifically a copper substrate in this embodiment, coating solder paste or a preformed solder sheet on the copper substrate, and sintering the side of the light-emitting layer with the silver reflective layer on the solder paste, The metal solder layer is formed by reflow soldering at 280~320°C.
在可选择的其他实施方式中，步骤S3也可以为：在铜基板上涂覆纳米银浆在200~300℃下烧结形成连接层。优选的，可以为加压至10Mpa下进行烧结，这样可以提高致密度。In other optional embodiments, step S3 may also be: coating nano silver paste on the copper substrate and sintering at 200-300° C. to form a connection layer. Preferably, sintering can be performed under pressure to 10 Mpa, which can improve the density.
步骤S2中采用的银粉为纯银，粒径范围是0.01~20um，颗粒是球形或者片状，有机体选用高温下可挥发或可分解的物质，在步骤S21的烘干和步骤S22的烧结过程中，有机体被除去，从而形成银反射层。The silver powder used in step S2 is pure silver, the particle size range is 0.01~20um, the particles are spherical or flake-like, and the organic body is selected from volatile or decomposable substances at high temperature. In the drying process of step S21 and the sintering process of step S22 , the organisms are removed, thereby forming a silver reflective layer.
进一步的，银粉中还可以掺杂含量不超过30%的钯或铂的金属粉用于改善银的高温迁移特性。Further, the silver powder can also be doped with palladium or platinum metal powder with a content of not more than 30% to improve the high temperature migration characteristics of silver.
实施例二Embodiment 2
如图3所示，·本实施方式与第一种实施方式基本相同，波长转换装置包括,发光层2-1、反射层2-2、连接层2-3和导热基板层2-4，区别在于，在发光层2-1和反射层2-2之间还设置有氧化铝膜层2-5。As shown in FIG. 3 , this embodiment is basically the same as the first embodiment, and the wavelength conversion device includes a light-emitting layer 2-1, a reflective layer 2-2, a connection layer 2-3 and a thermally conductive substrate layer 2-4. The difference is In that, an aluminum oxide film layer 2-5 is further arranged between the light-emitting layer 2-1 and the reflection layer 2-2.
如上所述，由于氧化铝与银层的晶体结构都为六方晶体结构，因此额外设置氧化铝膜层，可以与银反射层之间形成紧密的附着。同时，氧化铝膜层与氧化铝共晶发光层也可以形成很好的附着性。因此相较实施方式一，本实施方式中的氧化铝膜层2-5可以用于更进一步提高荧光层与银反射层之间的粘结性，增强发光层与反射层之间的附着力。As mentioned above, since the crystal structures of the aluminum oxide and the silver layer are both hexagonal crystal structures, an aluminum oxide film layer is additionally provided to form a close adhesion with the silver reflective layer. At the same time, the aluminum oxide film layer and the aluminum oxide eutectic light-emitting layer can also form good adhesion. Therefore, compared with the first embodiment, the aluminum oxide film layers 2-5 in this embodiment can be used to further improve the adhesion between the fluorescent layer and the silver reflection layer, and enhance the adhesion between the light-emitting layer and the reflection layer.
由于银颗粒的粒径越小，烧结活性高；因此设置氧化铝膜2-5，可以进一步减小银颗粒的粒径，提高烧结活性。Since the particle size of the silver particles is smaller, the sintering activity is high; therefore, the setting of the aluminum oxide film 2-5 can further reduce the particle size of the silver particles and improve the sintering activity.
相对于现有技术，本发明的有益效果如下：With respect to the prior art, the beneficial effects of the present invention are as follows:
相对于目前多孔的漫反射结构，本发明采用纯银烧结形成的银反射层，提高反射层反射率和热导率的同时，利用银反射层对氧化铝共晶发光层中氧化铝单晶较高的附着力，从而也一并解决了银反射层与氧化铝共晶发光层的附着力问题。Compared with the current porous diffuse reflection structure, the present invention adopts a silver reflection layer formed by sintering pure silver, which improves the reflectivity and thermal conductivity of the reflection layer, and uses the silver reflection layer to compare the alumina single crystal in the alumina eutectic light-emitting layer. High adhesion, which also solves the adhesion problem between the silver reflective layer and the aluminum oxide eutectic light-emitting layer.
本发明采用的氧化铝共晶发光层的热导率较高，且机械强度也更高，同时纯银反射层的反射率高，且热导率也较高，与连接层的附着力好，因而这种结构的波长转换装置能够实现高效率的同时，实现高亮度和高可靠性。The aluminum oxide eutectic light-emitting layer used in the present invention has higher thermal conductivity and higher mechanical strength, and at the same time, the pure silver reflective layer has high reflectivity and thermal conductivity, and has good adhesion with the connecting layer. Therefore, the wavelength conversion device with this structure can achieve high efficiency, high brightness and high reliability.
上述实施方式仅为本发明的优选实施方式，不能以此来限定本发明保护的范围，本领域的技术人员在本发明的基础上所做的任何非实质性的变化及替换均属于本发明所要求保护的范围。The above-mentioned embodiments are only preferred embodiments of the present invention, and cannot be used to limit the scope of protection of the present invention. Any insubstantial changes and substitutions made by those skilled in the art on the basis of the present invention belong to the scope of the present invention. Scope of protection claimed.
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| CN106195924A (en)* | 2013-06-08 | 2016-12-07 | 深圳市绎立锐光科技开发有限公司 | A kind of Wavelength converter and preparation method thereof, related lighting fixtures |
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| CN105805699A (en)* | 2014-12-30 | 2016-07-27 | 深圳市绎立锐光科技开发有限公司 | Manufacturing method for wavelength conversion device |
| CN204829755U (en)* | 2015-06-02 | 2015-12-02 | 深圳市光峰光电技术有限公司 | Wavelength conversion equipment , relevant illuminator and projecting system |
| CN106287580A (en)* | 2015-06-02 | 2017-01-04 | 深圳市光峰光电技术有限公司 | Wavelength converter and preparation method thereof, related lighting fixtures and optical projection system |
| CN105716039A (en)* | 2016-04-12 | 2016-06-29 | 杨阳 | Light conversion device and preparation method and application thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12237446B2 (en) | 2020-08-17 | 2025-02-25 | Ylx Incorporated | Wavelength conversion apparatus and method for manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108954039A (en) | 2018-12-07 |
| WO2018209925A1 (en) | 2018-11-22 |
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